JPH09190969A - Projecting exposure system and manufacture of device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To minimize the illuminance irregularity and project a pattern with high resolution by providing a rotatable optical element on which coating whose transmissivity varies with the angle of incidence is applied and whose angle to an optical axis changes, in the vicinity of a secondary light source, and rotating this optical element thereby adjusting the illumination irregularity on the plane of an object. SOLUTION: An optical integrator 6 constitutes a fly-eye lens, having a plurality of microlenses arranged at specified pitches two-dimensionally along the plane crossing the optical axis at right angles, and forms a secondary light source in the vicinity of the light emission face 6b. Then, an illumination irregularity correcting board 17 consists of an optical element where coating whose transmissivity or spectral transmissivity changes depending upon the angle of incidence is applied on a transparent board. The illumination irregularity correcting board 17 is retained by the holder 18 inclined by a specified angle to the optical axis La. Moreover, the holder 18 can rotate to the optical axis La. Hereby, the angle of incidence of the luminous flux into the illumination irregularity correcting board 17 is changed, whereby the illumination irregularity on the face for irradiation is adjusted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus and a device manufacturing method using the same, and more specifically to I
In a so-called stepper, which is a manufacturing device for semiconductor devices such as C, LSI, magnetic heads, and liquid crystal panels, a pattern on the reticle surface, which is a surface to be illuminated, is illuminated with a light flux having an appropriate illuminance distribution so that high resolution can be easily obtained. It is the one.

[0002]

2. Description of the Related Art In recent semiconductor device manufacturing technology, the resolution pattern line width is, for example, 1 μm as electronic circuits are highly integrated.
Since this is less than or equal to m, there is a demand for an optical projection exposure apparatus having a higher resolution than the conventional one. As a means for improving the resolution, there are a method of fixing the exposure wavelength and increasing the NA (numerical aperture) of the optical system, a method of using light having a shorter wavelength as the exposure wavelength, and the like. In addition, by changing the illumination method on the reticle surface, that is, by changing the light intensity distribution (effective light source distribution) of the 0th order light formed on the pupil surface of the projection optical system, a so-called modified illumination method is used. There are ways to increase the resolution.

The applicant of the present application has proposed, in Japanese Patent Application Laid-Open No. 4-267515, an exposure method in which the resolving power is enhanced by using this modified illumination method and a projection exposure apparatus using the exposure method.

[0004]

Generally, the effective light source distribution (light intensity distribution) on the pupil plane of the projection optical system greatly affects the resolution of the projected pattern image. For this reason, it has been proposed in the present projection exposure apparatus for manufacturing semiconductor chips to perform modified illumination with a plurality of illumination modes capable of illuminating the reticle by an optimal method for each process. In many projection exposure apparatuses, a certain illumination mode A among a plurality of illumination modes is used.
The position of each element of the illumination system is adjusted so that the uneven illuminance is minimized. However, when the illumination mode is changed to the illumination mode B different from the illumination mode A by using the modified illumination method, the illuminance unevenness is not always the minimum when each element of the illumination system is the same as the illumination mode A.

Therefore, in the illumination mode A in which each element of the illumination system is adjusted, the unevenness of illuminance is small and the ability of the exposure apparatus can be exhibited, but in the illumination mode B, the unevenness of illuminance occurs and the ability of the exposure apparatus is sufficiently exhibited. There was a problem that I could not do it.

The present invention provides a projection exposure apparatus capable of projecting various patterns on a reticle surface onto a wafer surface with high resolution and a method of manufacturing a device using the projection exposure apparatus, in which unevenness in illuminance is minimized even when various illumination modes are switched. For the purpose of providing.

In particular, according to the present invention, when illuminating a surface to be illuminated by using an illumination system including an optical integrator as a secondary light source forming means, by using an optical element having a spectral characteristic different depending on an incident angle, modified illumination or normal A projection exposure apparatus capable of illuminating a surface to be illuminated with an appropriate illuminance distribution in various illumination modes such as illumination, and capable of easily exposing and transferring a pattern on a reticle surface onto a wafer surface with high resolution. An object of the present invention is to provide a method for manufacturing a device using.

[0008]

A projection exposure apparatus according to the present invention comprises (1-1) a secondary light source having a light entrance / exit surface for receiving light from a light source at the light entrance surface and having a light exit surface side. A secondary light source forming means for forming a light source, a light irradiating means for irradiating the object plane with light from the secondary light source, and a projecting means for projecting the light-irradiated pattern on the object plane onto the image plane. In the vicinity of the secondary light source, a rotatable optical element whose angle formed with respect to the optical axis coated with a coating having different transmittance depending on the incident angle is provided is provided.
The illuminance distribution on the object plane is adjusted by rotating the optical element.

In particular, (1-1-1) a plurality of diaphragm-integrated optical elements in which an aperture diaphragm having a predetermined aperture shape is provided in the optical element, and the aperture diaphragm apertures of the plurality of diaphragm-integrated optical elements are provided. The shapes are different from each other, and one of the diaphragm-integrated optical elements is selected so that it can be inserted into and removed from the optical path, (1-1-2) the optical element with respect to the aperture diaphragm. It is configured to be rotatable by
1-3) It is characterized in that the optical element is constituted by a plane parallel plate or an optical wedge.

(1-2) A light beam from a light source is guided to an optical integrator in which a plurality of microlenses are arranged two-dimensionally, and a light beam from a light emitting surface of the optical integrator is condensed by a light irradiation means. When a pattern on the object plane is illuminated and the pattern on the object plane is projected onto the image plane by the projection optical system, a coating having different transmittance depending on the incident angle is applied in the vicinity of the light emitting surface of the optical integrator. It is characterized in that a rotatable optical element whose angle formed with respect to the optical axis changes is provided and the optical element is rotated to adjust the illuminance distribution on the object plane.

In particular, (1-2-1) there is provided a plurality of diaphragm-integrated optical elements in which an aperture diaphragm having a predetermined aperture shape is provided in the optical element, and the aperture diaphragm apertures of the plurality of diaphragm-integrated optical elements are provided. The shapes are different from each other, and one of the diaphragm-integrated optical elements is selected so that it can be inserted into and removed from the optical path. (1-2-2) The optical element is different from the aperture diaphragm. It is configured to be rotatable by (1-2
-3) The optical element is characterized by being constituted by a plane-parallel plate or an optical wedge.

In the device manufacturing method of the present invention, (2-1) a light beam from a light source is guided to an optical integrator composed of a plurality of minute lenses forming a secondary light source, and the light is emitted from the light emitting surface of the optical integrator. When a light flux is condensed by a light irradiation means to illuminate a pattern on a reticle surface, the pattern is projected onto a wafer surface by a projection optical system and exposed, and then the wafer is subjected to a developing treatment to manufacture a device. Provided in the vicinity of the light emitting surface of the optical integrator is a rotatable optical element whose angle is changed with respect to the optical axis coated with a coating having different transmittance depending on the incident angle, and the optical element is rotated to move the object plane. The feature is that the illuminance distribution above is adjusted.

In particular, (2-1-1) the optical element is configured to be rotatable with respect to the aperture stop, and (2-1-2) the optical element is a plane parallel plate or It is characterized by being composed of an optical wedge.

(2-2) A plurality of diaphragm-integrated optical elements in which an aperture diaphragm having a predetermined aperture shape is provided in the optical element,
The aperture shapes of the plurality of diaphragm-integrated optical elements are different from each other, and one of these diaphragm-integrated optical elements is selected and mounted so that it can be inserted into and removed from the optical path. .

In particular, (2-2-1) the optical element is configured to be rotatable with respect to the aperture stop, and (2-2-2) the optical element is a plane parallel plate or It is characterized by being composed of an optical wedge.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a main part of a first embodiment of the present invention. FIG. 2 is an enlarged explanatory view of a part of FIG.

In the figure, reference numeral 2 denotes an elliptical mirror. Reference numeral 1 denotes an arc tube as a light source, which has a high-luminance light emitting section 1a that emits ultraviolet rays, far ultraviolet rays, and the like. The light emitting section 1a is disposed near the first focal point 2a of the elliptical mirror 2. Reference numeral 3 denotes a cold mirror, which has a multilayer film and transmits most of infrared light and visible light of the light from the light emitting portion 1a and reflects most of ultraviolet light. The elliptical mirror 2 is connected to the second
An image (light source image) 1b of the light emitting portion 1a is formed near the focal point 4.

An optical system 5 is composed of a condenser lens, a zoom lens (variable magnification optical system), etc., and re-images the light emitting portion image 1b formed in the vicinity of the second focal point 4 on the light incident surface 6a of the optical integrator 6. I am letting you. The imaging magnification at this time can be changed by configuring the optical system 5 with a zoom lens.

A prism is provided in the optical path of the optical system 5 as needed to adjust the illuminance distribution on the incident surface 6a of the optical integrator 6 in response to modified illumination described later.

The optical integrator 6 forms a fly-eye lens by arranging a plurality of minute lenses 6-i (i = 1 to N) two-dimensionally at a predetermined pitch along a plane orthogonal to the optical axis. A secondary light source is formed near the light exit surface 6b.

Here, the optical integrator 6 has a light incident surface 6a, receives light from the light source 1 at the light incident surface 6a, and forms an element of a secondary light source forming means for forming a secondary light source on the light emitting surface 6b. I am configuring. Also, the elliptical mirror 2, the mirror 3,
The optical system 5 constitutes one element of the light source image projection means for projecting the image of the light source 1 on the light incident surface of the secondary light source forming means.

Reference numeral 7 denotes a variable aperture stop, which includes a normal circular aperture stop, on the pupil plane 14 of the projection lens 13 as shown in FIGS. 3 (A), (B), (C) and (D). It consists of various diaphragms that change the light intensity distribution. In this way, so-called modified illumination is performed.

The aperture stop shown in FIG. 3A is a commonly used aperture stop, and the aperture diameter is σ value (= NA of illumination optical system).
/ NA of the projection optical system is about 0.5 to 0.7. The diaphragm shown in FIG. 3B has a σ value of 0.3 to 0.
An aperture stop having an aperture diameter of about 4 is used when a phase shift mask is used. The aperture stop shown in FIG. 3C is an aperture stop for annular illumination, and the aperture stop shown in FIG. 3D is an aperture stop for quadrupole illumination, and is an aperture stop that performs modified illumination to improve resolution and depth of focus. Is a kind of.

In this embodiment, the variable aperture stop 7 is 7
The illumination mode is changed by selecting any one of a, 7b, 7c, and 7d. Therefore, the aperture stops 7a to 7d
The disk-shaped turret is used.

Reference numeral 17 denotes an illuminance unevenness correcting plate, which is composed of an optical element having a coating (multilayer film) whose transmittance or spectral transmittance changes depending on the incident angle on a transparent substrate.
The uneven illuminance correction plate 17 is held by a holder 18 that is tilted at a predetermined angle with respect to the optical axis La. Further, the holder 18 is rotatable with respect to the optical axis La. Thereby, the incident angle of the light flux on the uneven illuminance correction plate 17 is changed to adjust the uneven illuminance on the surface to be illuminated.

In this embodiment, as shown in FIG. 2, the aperture stop 7, the illuminance unevenness correction plate 17, and the holder 18 are constructed as one unit 19. This unit 1
9 can be easily attached to and detached from the filter exchange mechanism 16 with a diaphragm, and can be exchanged if necessary. A plurality of units 19 can be attached to the filter exchange mechanism 16 with a diaphragm, and the unit 19 is arbitrarily selected by rotating the filter exchange mechanism 16 with a diaphragm according to the illumination mode. In the present embodiment, the aperture stop 7, the optical system 5, the illuminance unevenness correction plate 17 and the like constitute one element of the secondary light source adjusting means for changing the light intensity distribution of the secondary light source.

Reference numeral 8 is a condenser lens as a condenser lens. Reference numeral 9 is a mirror, and 10 is a masking blade. A plurality of light fluxes emitted from the secondary light source near the light emission surface 6b of the optical integrator 6 pass through the illuminance unevenness correction plate 17, are condensed by the condenser lens 8, are reflected by the mirror 9, and are reflected by the masking blade 10. The light enters and illuminates the opening surface of the masking blade 10 uniformly. The masking blade 10 is composed of a plurality of movable light shielding plates so that an arbitrary opening shape is formed.

Reference numeral 11 denotes an image forming lens, which is a reticle (object plane) whose opening is an opening of the masking blade 10.
The image is formed on the 12th surface and the necessary area on the 12th surface of the reticle is uniformly illuminated. Here, the condenser lens 8, the mirror 9, the imaging lens 11 and the like constitute one element of a light irradiation unit that irradiates the object plane with light from the secondary light source.

Reference numeral 13 denotes a projection optical system (projection means) composed of a lens system, which is a wafer (substrate) 15 which is an image plane on which a circuit pattern on the surface of the reticle 12 is placed on a wafer chuck.
The projection is reduced on the surface. The projection optical system may be configured by a catadioptric optical system including a reflective system such as a projection mirror in addition to the refractive system. Reference numeral 14 denotes a pupil plane (diaphragm) of the projection optical system 13.

In the optical system of this embodiment, the light emitting section 1
a, the second focal point 4, and the incident surface 6a of the optical integrator 6 have a substantially conjugate relationship. Further, the masking blade 10, the reticle 12, and the wafer 15 are in a conjugate relationship. Further, the aperture stop 7 and the pupil plane 14 of the projection optical system 13 have a substantially conjugate relationship.

In the present embodiment, with the above configuration,
The circuit pattern on the surface of the reticle 12 is reduced and projected onto the surface of the wafer 15 to expose the wafer 15 with a circuit pattern image. The semiconductor device is manufactured through a predetermined development process.

Next, a method of correcting the illuminance unevenness on the surface of the wafer 15 by changing the aperture shape of the aperture stop 7 to change the illumination mode and rotating the illuminance unevenness correction plate 17 in the present embodiment will be described. .

FIGS. 4A and 4B are explanatory views of optical characteristics (spectral characteristics) of the optical thin film (coating film) used in the uneven illuminance correction plate 17 in this embodiment. In the figure, the horizontal axis represents wavelength and the vertical axis represents transmittance T.

In the figure, the spectral characteristics of the optical thin film showing a high transmittance for a specific wavelength are shown. In the figure, λ ₀ represents the exposure wavelength, the solid curve Pa represents the incident angle θ = 0, and the dotted curve Pb represents the spectral transmittance when the incident angle θ = ε. Generally, the optical thin film shifts its spectral characteristics toward the short wavelength side as the incident angle increases. When the optical thin film has a characteristic such as a curve Pa whose transmittance is inclined with respect to the exposure wavelength, when the incident angle is not 0 degree, the spectral characteristic shifts to the short wavelength side and becomes the state of the curve Pb. At this time, the exposure light has a difference in transmittance of ΔT due to a difference in the incident angle to the uneven illuminance correction plate.
Becomes

In this embodiment, the illuminance unevenness correction plate 17 provided with the optical thin film having the above-mentioned spectral characteristics is used to sensitively change the transmittance for exposure light by changing the incident angle. That is, as shown in FIG. 5, by rotating the uneven illuminance correction plate 17 in the optical path to change the incident angle of the light flux, the uneven illuminance at each point Qa, Qb, Qc of the masking blade 10 (wafer surface 15) is changed. Is corrected variously.

FIG. 5 is an enlarged explanatory view of the optical path in the vicinity of the uneven illuminance correction plate 17 of FIG. In the figure, there is a diaphragm 7 near the exit surface 6b of the fly-eye lens 6 to form an arbitrary secondary light source shape. The luminous flux from the secondary light source passes through the uneven illuminance correction plate 17, is converged by the condenser lens 8, and illuminates the masking blade (irradiated surface) 10. At this time, the light rays having the same emission angle from the secondary light source illuminate the same place on the irradiated surface 10. That is, the exit angle α
The ray of light is focused on the point Qa, the ray of exit angle 0 is focused on the point Qb, and the ray of exit angle γ is focused on the point Qc. Therefore, when it is desired to reduce the illuminance at the position Qa, the transmittance of the light ray having the exit angle α may be reduced.

For example, it is assumed that the illuminance unevenness at the time of annular illumination using the diaphragm 7 of FIG. 3 (C) is as shown in FIG. 6 (A).
At a high image height, the illuminance is high. Therefore, as the uneven illuminance correction plate 17, one having a film having a characteristic that the illuminance decreases as the incident angle increases as shown in FIG. 4A is used. When the uneven illuminance correction plate 17 is inserted perpendicularly to the optical axis, the uneven illuminance is as shown in FIG. 6C. When the uneven illuminance correction plate 17 is inserted perpendicularly to the optical axis, the correction amounts of the illuminance at the same image height with respect to the optical axis are almost the same, so the illuminance is lowered at both the position Qa and the position Qc in FIG. However, the illuminance is high at the position Qa and low at the position Qc with respect to the central illuminance.

This is because not only the illuminance unevenness varies depending on the image height (the illuminance unevenness with respect to the optical axis is caused by the angular characteristics of the antireflection film of the lens, etc.) but also the asymmetrical illuminance unevenness (on the image plane). This is because there is an uneven illuminance due to inclination, which is caused by the eccentricity of the lens system.

Here, if the uneven illuminance correction plate 17 is tilted in the direction of the arrow t, the uneven illuminance correction plate 17 of the light beam focused on Qa is obtained.
Is large, and the angle of the light beam focused at the point Qc is small on the uneven illuminance correction plate 17. Then, the transmittance of the light beam condensed at the point Qa becomes small, and the point Qa
The transmittance of the light beam focused on c increases, and the point Q
The illuminance of c increases. Thereby, the uneven illuminance on the irradiation surface 10 is improved so as to be as shown in FIG.

Further, in another illumination mode using a diaphragm as shown in FIGS. 3B and 3D, when the illuminance unevenness becomes lower as the image height becomes higher on the irradiation surface,
As shown in FIG. 4B, the uneven illuminance is corrected promptly by using the uneven illuminance correction plate coated such that the transmittance increases as the incident angle increases. In this way, by using the uneven illuminance correction plate with different spectral characteristics according to each illumination mode and controlling the angle of the uneven illuminance correction plate with respect to the optical axis, the uneven illuminance on the irradiation surface can be reduced even if the illumination mode is changed. I try to hold it down.

In this embodiment, the illuminance unevenness correction at a certain cross section on the image plane is described. However, since the illuminance unevenness correction plate can be rotated with respect to the diaphragm, the illuminance unevenness at any cross section is obtained. Can be corrected. The illuminance unevenness correction plate is integrated with the diaphragm by the holder, but it can be easily attached to and removed from the filter exchange mechanism 16 with a diaphragm, so that another diaphragm and another illuminance unevenness correction plate can be attached in combination. According to this, uniform illuminance can be obtained for all modified illumination.

Next, FIGS. 7A to 7C and 8A to
(C) shows another embodiment such as an uneven illuminance correction plate.
For convenience, FIG. 4 shows an optical thin film for correcting uneven illuminance.
As shown in (A), it is assumed that a coating having a smaller transmittance as the incident angle becomes larger is used.

FIG. 7A shows an embodiment of the holder 18 in which the angle of the uneven illuminance correction plate 17 can be easily controlled. The holder 18 is composed of two lens barrels 18a and 18b which are obtained by cutting a cylinder obliquely.
b can rotate independently of the optical axis.
Then, the uneven illuminance correction plate 1 is provided on the exit surface of the lens barrel 18b on the exit side.
7 is fixed.

It will be described below that the illuminance on the image plane can be corrected by this mechanism. FIG. 7B is a schematic view in which the two sets of lens barrels 18a and 18b are alternately arranged and installed on the irradiation surface side of the diaphragm surface. The illuminance distribution at this time is shown in FIG.
It is assumed that the illuminance on the irradiation surface Qa is relatively high as in (B). At this time, the lens barrel 18b on the exit surface side of the present embodiment is
The illuminance unevenness correction plate 17 is rotated by 0 degree (FIG. 7C) and is tilted with respect to the optical axis, whereby the illuminance unevenness on the irradiation surface 10 is corrected.

FIG. 8 (A) shows another embodiment in which the illuminance unevenness correcting plate itself has the angle control mechanism 17.
In the present embodiment, the illuminance unevenness correction plate 1 as shown in FIG.
Reference numeral 7 is composed of two optical wedges 17a and 17b having the same oblique angle. The optical wedges 17a and 17b can rotate independently of the optical axis. In this embodiment, the optical thin film for illuminance unevenness correction has two optical wedges 17a,
17b is provided on each of two opposite surfaces. It will be described below that the illuminance on the image plane can be corrected by this mechanism.

FIG. 8B shows the two sets of optical wedges 17a, 1a.
FIG. 7 is a schematic view in which 7b is configured such that a thick portion and a thin portion face each other and is installed on the irradiation surface side of the diaphragm surface. It is assumed that the illuminance distribution at this time is relatively high on the irradiation surface Qa as shown in FIG. 6B. At this time, the optical wedge 1 on the incident side of the present embodiment
When 7a is rotated 180 degrees (FIG. 8 (C)), the transmittance of the light beam condensed at the point Qa at the time of exiting the first optical wedge 17a becomes higher than that in the state of FIG. 8 (B), and the point Qc The transmittance at the time of exiting the first optical wedge 17a of the light beam converged on is lower than that in the state of FIG. 8 (B). This relatively corrects the illuminance unevenness on the irradiation surface.

In each of the above embodiments, an example of a projection exposure apparatus using a mercury lamp as a light source is shown. However, even when a laser light source is used, uneven illuminance can be similarly corrected.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described projection exposure apparatus will be described.

FIG. 9 shows a flow of manufacturing a semiconductor device (semiconductor chip such as IC or LSI, or liquid crystal panel, CCD or the like).

In step 1 (circuit design), a circuit of a semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design.

On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 10 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist are scraped off. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of the present embodiment, it is possible to easily manufacture a highly integrated semiconductor device which has been conventionally difficult to manufacture.

[0058]

According to the present invention, by setting each element as described above, the illuminance unevenness is minimized even when the illumination mode is switched variously, and various patterns on the reticle surface are high on the wafer surface. A projection exposure apparatus capable of projecting with a resolving power and a device manufacturing method using the same can be achieved.

Further, according to the present invention, as described above, when the illuminated surface is illuminated by using the illumination system including the optical integrator as the secondary light source forming means, the optical element having the spectral characteristic different depending on the incident angle is used. In this way, the illuminated surface can be illuminated with an appropriate illuminance distribution in various illumination modes such as modified illumination and normal illumination, and the pattern on the reticle surface can be easily exposed and transferred onto the wafer surface with high resolution. It is possible to achieve a projection exposure apparatus and a device manufacturing method using the same.

[Brief description of the drawings]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

FIG. 2 is an enlarged perspective view of a part of FIG.

FIG. 3 is an explanatory view of a part of FIG. 1;

4 is an explanatory diagram of spectral characteristics of the optical element of FIG.

FIG. 5 is an enlarged explanatory view of a part of FIG. 1;

FIG. 6 is an explanatory diagram of illuminance unevenness on the illuminated surface of FIG.

FIG. 7 is an explanatory diagram of a driving method of the optical element of FIG.

FIG. 8 is an explanatory diagram of a driving method of the optical element of FIG.

FIG. 9 is a flowchart of a device manufacturing method according to the present invention.

FIG. 10 is a flowchart of a device manufacturing method according to the present invention.

[Explanation of symbols]

 1 UV light source such as mercury lamp 1a Light emitting part 2 Elliptical mirror 3 Cold mirror 4 Second focal point 5,8,11 Condenser lens 6 Optical integrator (fly's eye lens) 6a Fly's eye lens Lens entrance part 6b Fly's eye lens lens Ejection unit 7 Aperture 9 Reflective mirror 10 Masking blade 12 Reticle 13 Projection lens 14 Projection lens pupil 15 Wafer 16 Filter exchange mechanism with aperture 17 Illuminance unevenness correction plate (optical element) 18 Holder

Claims (16)

[Claims] 1. A secondary light source forming means for forming a secondary light source on the light exit surface side, the secondary light source forming means having a light incident / exit surface and receiving light from the light source at the light entrance surface, and light from the secondary light source. Having a light irradiating means for irradiating the object plane to the object plane and a projecting means for projecting the light-irradiated pattern on the object plane onto the image plane, and a coating having different transmittance depending on the incident angle in the vicinity of the secondary light source. The projection exposure apparatus is characterized in that a rotatable optical element whose angle formed with respect to the optical axis subjected to the change is provided, and the optical element is rotated to adjust the illuminance distribution on the object plane. . 2. A light beam from a light source is passed through a plurality of minute lenses.
The light is guided to a two-dimensionally arranged optical integrator, the light flux from the light emitting surface of the optical integrator is condensed by the light irradiation means, the pattern on the object plane is illuminated, and the pattern on the object plane is projected. When projecting on the image plane by the system, a rotatable optical element whose angle formed with respect to the optical axis coated with a coating having different transmittance depending on the incident angle is provided near the light emitting surface of the optical integrator, A projection exposure apparatus, wherein the optical element is rotated to adjust an illuminance distribution on the object plane. 3. A plurality of diaphragm-integrated optical elements in which an aperture diaphragm having a predetermined aperture shape is provided in the optical element, and the aperture shapes of the aperture diaphragms of the plurality of diaphragm-integrated optical elements are different from each other. 2. The projection exposure apparatus according to claim 1, wherein one of the diaphragm-integrated optical elements is selected and mounted so that it can be inserted into and removed from the optical path. 4. A plurality of diaphragm-integrated optical elements in which an aperture diaphragm having a predetermined aperture shape is provided in the optical element, and the aperture shapes of the aperture diaphragms of the plurality of diaphragm-integrated optical elements are different from each other, 3. The projection exposure apparatus according to claim 2, wherein one of the diaphragm-integrated optical elements is selected and mounted so that it can be inserted into and removed from the optical path. 5. The projection exposure apparatus according to claim 3, wherein the optical element is configured to be rotatable with respect to the aperture stop. 6. The projection exposure apparatus according to claim 4, wherein the optical element is configured to be rotatable with respect to the aperture stop. 7. The projection exposure apparatus according to claim 1, wherein the optical element comprises a plane-parallel plate or an optical wedge. 8. The projection exposure apparatus according to claim 2, wherein the optical element comprises a plane-parallel plate or an optical wedge. 9. The projection exposure apparatus according to claim 3, wherein the optical element comprises a plane-parallel plate or an optical wedge. 10. The projection exposure apparatus according to claim 4, wherein the optical element comprises a plane-parallel plate or an optical wedge. 11. A reticle surface in which a light beam from a light source is guided to an optical integrator composed of a plurality of minute lenses forming a secondary light source, and a light beam from a light emission surface of the optical integrator is condensed by a light irradiation means. When the above pattern is illuminated, the pattern is projected onto the wafer surface by a projection optical system and exposed, and then the wafer is developed to manufacture a device, when the device is manufactured by the incident angle near the light emitting surface of the optical integrator. It is characterized in that a rotatable optical element whose angle formed with respect to the optical axis that is coated with different transmittance is changed and the optical element is rotated to adjust the illuminance distribution on the object plane. Manufacturing method of device. 12. The method of manufacturing a device according to claim 11, wherein the optical element is configured to be rotatable with respect to the aperture stop. 13. The method of manufacturing a device according to claim 11, wherein the optical element comprises a plane-parallel plate or an optical wedge. 14. A plurality of diaphragm-integrated optical elements in which an aperture diaphragm having a predetermined aperture shape is provided in the optical element, and the aperture shapes of the aperture diaphragms of the plurality of diaphragm-integrated optical elements are different from each other, 12. The method for manufacturing a device according to claim 11, wherein one of the diaphragm-integrated optical elements is selected and mounted so that it can be inserted into and removed from the optical path. 15. The method of manufacturing a device according to claim 14, wherein the optical element is configured to be rotatable with respect to the aperture stop. 16. The method of manufacturing a device according to claim 14, wherein the optical element is constituted by a plane-parallel plate or an optical wedge.