JP2000114164A - Scanning projection aligner and manufacture of device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately and readily correct inclined unevenness of exposure by providing a changing means, which changes the angle between the direction of the edge section of an illuminated extent specified by means of a light- shielding member and a first direction. SOLUTION: The output of an uneven exposure detecting circuit 18 works to suppress the unevenness of exposure of an illuminated area 100, by utilizing an illumination distribution variable lens 5 and a variable slit 7 or by means of the slit 7 via an uneven exposure correcting circuit 19. In this case, the correction of inclined unevenness of exposure in the direction (Y-direction) perpendicular to the scanning direction is performed, by using each blade (light shielding plate) of the slit 7. Each blade of the slit 7 moves to the direction (perpendicular to each edge), in which the blade limits (or enlarges) a luminous flux so as to change the illuminated extent. In addition, the inclined unevenness of exposure in a direction perpendicular to the scanning direction (X-direction) is corrected, by driving the blades in the Y-direction by means of a changing means, such as motor, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a scanning projection exposure apparatus and a method for manufacturing a device using the same.
In the process of manufacturing semiconductor devices such as C and LSI, imaging devices such as CCDs, display devices such as liquid crystal panels, and devices such as magnetic heads, in a scanning projection exposure apparatus used in a lithography process, a reticle or the like is used. This is suitable for a case where a pattern on one object plane is projected and exposed on a second object plane such as a wafer with a uniform light amount distribution by a projection optical system.

[0002]

2. Description of the Related Art In recent years, the integration of semiconductor devices such as ICs and LSIs has been increasing at an ever-increasing rate, and as a result, an arc-shaped exposure area has been used as a projection exposure apparatus which is the center of fine processing technology for semiconductor wafers. A 1: 1 projection exposure apparatus (mirror projection aligner) for exposing while scanning a mask and a photosensitive substrate to a 1x mirror optical system with a mask, and a pattern image of the mask is formed on the photosensitive substrate by a refractive optical system. There has been proposed a reduction projection exposure apparatus (stepper) for exposing an image by a step-and-repeat method.

Recently, a chip pattern of one semiconductor element has been increasing in size, and a projection exposure apparatus has been required to have a larger area for exposing a larger area pattern on a mask onto a photosensitive substrate.

In recent years, various step-and-scan type scanning projection exposure apparatuses (exposure apparatuses) which can obtain a high resolution and can enlarge a screen size have been proposed for these essential parts. In this scanning type exposure apparatus, a pattern on a reticle surface is illuminated by a slit light beam, and the pattern illuminated by the slit light beam is exposed and transferred onto a wafer by a scanning operation via a projection system (projection optical system). I have.

[0005] As this scanning projection exposure apparatus, for example, a conventional scanning projection exposure apparatus of the same magnification using a reflection projection optical system is improved, and a refraction element is incorporated in the projection optical system, and a reflection element and a refraction element are used. A scanning exposure apparatus or the like that synchronously scans both a mask stage and a stage of a photosensitive substrate (wafer stage) at a speed ratio corresponding to a reduction magnification by using a combination or a reduction projection optical system constituted only by a refraction element. Has been proposed.

Generally, in order to obtain a high-resolution pattern, it is necessary to scan and expose a wafer surface with a uniform light amount distribution.

[0007]

FIG. 8A shows the wafer 1
3 shows a state in which a plurality of element patterns in 3 are sequentially scanned and exposed, and a hatched portion in the drawing is an exposure region at a certain time. The element pattern is exposed by repeating scanning and steps in the exposure area as indicated by arrows. In such an exposure method, the exposure unevenness within one shot 13a (the range exposed by one scan) shown in FIG. 8B is enlarged by x as shown in FIG. 8C.
Direction is almost uniform in the direction (direction parallel to the scanning direction),
In the y direction (a direction perpendicular to the scanning direction), unevenness in the light intensity distribution of the slit-shaped light beam itself and unevenness in the exposure amount due to differences in the width of the slits occur.

In a scanning type exposure apparatus that projects a pattern on a mask onto a wafer by relatively scanning the mask and the wafer with respect to such a slit-like light beam, the length direction of the slit (slit Exposure unevenness in the direction perpendicular to the scanning direction of the light beam) increases the defect rate when manufacturing a semiconductor device.

Japanese Patent Application Laid-Open No. 62-193125 discloses a projection exposure apparatus having a function of correcting exposure unevenness on a wafer during scanning exposure.
No. 6,086,045. There is a method in which the width of the slit is partially changed to adjust the exposure amount of each portion.

FIG. 9 shows an example of a slit having a variable slit width in a scanning type exposure apparatus for performing scanning exposure with a ring-shaped light beam in the publication. The slit is composed of a number of light shielding members, and the width of the slit is partially changed by adjusting the position by independently moving the many light shielding members. In this method, a very large number of movable light-shielding members are required in order to suppress the exposure unevenness, which results in a complicated mechanism.

In particular, even with a single scanning type exposure apparatus, it is necessary to change the beam shape in the illumination beam each time in order to change the illumination NA, change the slit width, or perform various uses. Is desired.

According to the present invention, it is possible to accurately and easily correct exposure unevenness, in particular, tilt exposure unevenness (linear change in exposure amount distribution) which occurs in a direction perpendicular to the scanning direction, and to mount on the first movable stage. The pattern on the reticle surface as the first object placed on the wafer surface as the second object placed on the second movable stage by the projection optical system can be scanned and exposed with uniform light quantity distribution with high accuracy. An object of the present invention is to provide a scanning projection exposure apparatus capable of easily manufacturing a semiconductor device having a high degree of integration and a method for manufacturing a device using the same.

[0013]

According to the present invention, there is provided a scanning projection exposure apparatus comprising: (1-1) a mask and a substrate to be exposed intersect with the first direction by an exposure beam having an opening shape extending in the first direction; In a scanning projection exposure apparatus that sequentially projects and exposes the pattern of the mask onto the substrate to be exposed by scanning in the second direction, the illumination on one side of the substrate in the second direction on the substrate to be exposed At least one light-blocking member defining a range,
It is characterized by having a changing means for changing the angle between the direction of the edge portion of the illumination range defined by the light shielding member and the first direction.

(1-2) The mask and the substrate to be exposed are scanned with an exposure beam having an opening shape extending in a first direction in a second direction intersecting the first direction, thereby changing the pattern of the mask. In a scanning projection exposure apparatus for sequentially projecting and exposing on a substrate to be exposed, the apparatus includes at least one light shielding member including an edge portion defining an illumination range on one side in a second direction on the substrate to be exposed, It is characterized by having a position changing means for changing the position of the light shielding member in the first direction.

(1-3) The pattern on the first object surface mounted on the first movable stage is illuminated by an illumination system with a light beam having an opening shape extending in a first direction by the illumination system, and the pattern on the first object surface is illuminated. On the second object plane placed on the second movable stage by the projection optical system, the scanning means applies the first and second movable stages in a second direction orthogonal to the first direction by a projection magnification of the projection optical system. In a scanning projection exposure apparatus that performs scanning projection exposure in synchronization with a speed ratio corresponding to the illumination system, the illumination system has a movable slit including a plurality of light shielding members that limits an illumination range on the first object plane, One of the plurality of light shielding members, which restricts the illumination range in the second direction, is moved so that the edge of the light shielding member on the side of the illumination area changes in the first direction. It is characterized by having.

(1-4) The pattern on the first object surface mounted on the first movable stage is illuminated by an illumination system with a light beam having an opening shape extending in a first direction, and the pattern on the first object surface is illuminated. On the second object plane placed on the second movable stage by the projection optical system, the scanning means applies the first and second movable stages in a second direction orthogonal to the first direction by a projection magnification of the projection optical system. In a scanning projection exposure apparatus that performs scanning projection exposure in synchronization with a speed ratio corresponding to the illumination system, the illumination system has a movable slit including a plurality of light shielding members that limits an illumination range on the first object plane, One of the plurality of light shielding members, which restricts the illumination range in the second direction, is moved to change the angle formed between the edge of the light shielding member on the side of the illumination area and the first direction. It is characterized by having

(1-5) The pattern on the first object surface placed on the first movable stage is illuminated by an illumination system with a light beam having an opening shape extending in a first direction by the illumination system, and the pattern on the first object surface is illuminated. On the second object plane placed on the second movable stage by the projection optical system, the scanning means applies the first and second movable stages in a second direction orthogonal to the first direction by a projection magnification of the projection optical system. In a scanning projection exposure apparatus that performs scanning projection exposure in synchronization with a speed ratio corresponding to the illumination system, the illumination system has a movable slit including a plurality of light shielding members that limits an illumination range on the first object plane, By moving one of the plurality of light shielding members that restricts the illumination range in the second direction, the light shielding member is formed by an edge portion on the illumination area side of the light shielding member and an edge portion of another light shielding member. The shape of the opening is changed.

Particularly, in any one of the constitutions (1-1) to (1-5), (1-5-1) the shape of the edge portion of the light shielding member is approximately a quadratic curve.

(1-5-2) The light shielding member is movable in the second direction. And so on.

The method of manufacturing a device according to the present invention includes the steps of: (2-1) aligning a reticle with a wafer by using one of the scanning projection exposure apparatuses of any one of the constitutions (1-1) to (1-5); After that, the pattern on the reticle surface is projected and exposed on the wafer surface, and thereafter, the wafer is subjected to a developing process to manufacture devices.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic diagram showing a configuration of a scanning exposure apparatus according to a first embodiment of the present invention. In this embodiment, a reticle (mask) is irradiated with a light beam emitted from a light source via an illumination optical system as a slit light beam, and a circuit pattern formed on the reticle is coated with a photoreceptor by a projection lens (projection optical system). Shows a step-and-scan type exposure apparatus that prints a reduced projection while scanning on a wafer that has been scanned, and is suitable for manufacturing devices such as semiconductor devices such as ICs and LSIs, imaging devices such as CCDs, and magnetic heads. Things.

FIGS. 2 to 4 are enlarged explanatory views of a part of FIG. In the figure, reference numeral 1 denotes a light source, which is composed of a mercury lamp, an excimer laser, or the like, and supplies light in an ultraviolet region.
Reference numeral 2 denotes a beam (light flux) shaping optical system which shapes a light flux from the light source 1 into a predetermined shape and makes the light flux incident on the light incident surface 3a of the optical integrator 3 to adjust the symmetry and the degree of light collection on the secondary light source forming surface. Optimized. The optical integrator 3 is composed of a fly-eye lens or the like made up of a plurality of minute lenses, and forms a plurality of secondary light sources near the light exit surface 3b.

Reference numeral 4 denotes an illumination stop, which is arranged near the light exit surface 3b. Switching of illumination diaphragm 4 and light beam shaping optical system 2
Lighting conditions (ring zone lighting, quadrupole lighting, NA
Etc.) in various ways.

Reference numeral 5 denotes an illuminance distribution variable lens (condenser lens), which has an optical function of changing the illuminance distribution on the reticle 11 surface, which will be described later, by changing the magnification.

The condenser lens 5 Koehler-illuminates a movable slit (masking blade) 7 having a variable opening shape with a light beam from a secondary light source near the light exit surface 3b of the optical integrator 3.

The light beam illuminating the movable slit 7 illuminates a reticle (mask) 11 via an imaging lens 8, a mirror 9, and an imaging lens 10. The movable slit 7 is arranged at a position optically conjugate with the reticle 11 or at a position slightly defocused. The shape and size of the illumination area of the reticle 11 are defined by the shape of the opening of the movable slit 7. The movable slit 7 is provided with, for example, a voice coil motor (not shown). The illumination area on the surface of the reticle 11 is controlled by changing the opening of the movable slit 7 and controlling the movement of the movable slit 7 in the optical axis direction. Is controlling.

Reference numeral 17 denotes an illuminance monitor (light amount detector).
The light intensity of a part of the exposure light split by the half mirror 6 is detected, the illuminance on the reticle surface 11 is indirectly detected, and a signal is output to the exposure unevenness detection circuit 18.

Beam shaping optical system 2, optical integrator 3, condenser lens 5, movable slit 7,
An imaging optical system that supplies exposure light to the reticle 11 is constituted by the imaging lenses 8, 10, the mirror 9, and the like. Further, the illumination optical system includes a dimming unit (not shown), which is capable of adjusting the amount of light from the light source 1 in multiple stages.

The reticle 11 is held on a reticle stage (first movable stage), and a circuit pattern is formed on the reticle surface. Reference numeral 12 denotes a projection lens (projection optical system), which stores a circuit pattern of the reticle 11 on the wafer 1.
3 is reduced and projected. The surface of the wafer 13 is coated with a resist which is a photosensitive member. The wafer 13 is held by a wafer chuck 14 and mounted on a wafer stage (second movable stage) 15 that is three-dimensionally displaced.

An illuminance monitor (light amount detector) 16 is provided on the wafer stage 15, and detects the illumination distribution in the illumination area 100 via the projection lens 12. The light quantity detector 16 detects the illuminance distribution in the illumination area 100 by moving the wafer stage 15 while referring to the output result of the light quantity detector 17.

An exposure unevenness detecting circuit 18 detects exposure unevenness which may occur when exposing the wafer 13 based on the detection result of the light amount detector 16. Exposure unevenness detection circuit 18
The output from the illuminance distribution variable circuit 5 and the variable slit 7 are used through the exposure unevenness correction circuit 19, or the variable slit 7 performs an operation of minimizing the exposure unevenness of the illumination area 100.

The reticle 11 and the wafer 13 are moved in opposite directions to each other in a direction indicated by an arrow (X direction in FIG. 1) while synchronizing at a speed ratio corresponding to the projection magnification of the projection optical system 12, and the surface of the reticle 11 is moved. The upper pattern is scanned and exposed on the surface of the wafer 13.

The scanning exposure apparatus of the present embodiment scans the mask and the substrate to be exposed in a second direction intersecting the first direction with an exposure beam having a cross-sectional shape extending in the first direction. In a scanning projection exposure apparatus that sequentially projects and exposes the pattern of the mask onto the substrate to be exposed, at least one light-shielding member that defines an illumination range on one side in a second direction on the substrate to be exposed is provided. And a changing means for changing an angle between an edge direction of the illumination range defined by the light blocking member and the first direction.

Alternatively, there is provided a position changing means for changing the position of the light shielding member in the first direction.

The reticle 11 of the projection exposure apparatus shown in FIG.
A method for detecting exposure unevenness on the surface or the surface of the wafer 13 and a method for correcting exposure unevenness will be described with reference to FIG.

The detection of exposure unevenness is performed by using the exposure detector 16 mounted on the wafer stage 15 as described above.
Among the illuminance distributions of the illumination area 100 on the shot of the wafer 13, the unevenness of the illuminance distribution in the scanning direction (X direction) has a small effect on the exposure unevenness.

Therefore, here, the unevenness of exposure in the direction orthogonal to the scanning direction (corresponding to the longitudinal direction of the opening of the slit 7) (Y direction) is measured by measuring the integrated value distribution of the illuminance distribution in the scanning direction (X direction). Has been gained. First, in order to measure the integrated value of the illuminance distribution in the scanning direction, an aperture 20 having the shape shown in FIG. 3 is provided on the surface of the light quantity detector 16 in order to limit the light incident on the light quantity detector 16. The aperture of the stop 20 in the scanning direction is longer than the illumination area 100.

Then, the light beam entering the light quantity detector 16 through the stop 20 is photoelectrically detected, and the light quantity detector 16 with the slit-shaped stop is moved in a direction (Y direction) orthogonal to the scanning direction. To detect the illuminance distribution integrated value at each position along the orthogonal direction.

Correction of tilt exposure unevenness in the direction (Y direction) orthogonal to the scanning direction is performed by the blades 7a to 7 of the variable slit 7.
d is used. As shown in FIG. 2, the variable slit 7 in FIG. 1 includes four blades (light-shielding plates) 7a to 7d, and each blade restricts (or enlarges) a light beam (direction orthogonal to each edge). , Changing the lighting range. Here, the blade 7a has a quadratic curve at the edge (edge portion) 7t, as shown in FIG.
As shown in (B), the blade 7a has a Y direction perpendicular to the X direction.
It can be driven in any direction.

By driving the blade 7a in the Y direction using a changing means such as a motor, inclination unevenness in the direction (Y direction) orthogonal to the scanning direction (X direction) is corrected. That is, the inclination between the edge portion 7t and the Y direction is changed.

FIG. 5A shows the integrated light quantity distribution in the Y direction orthogonal to the scanning direction when the blade 7a is in the reference state (for example, the state shown in FIG. 2A). FIG. 5B shows the integrated light amount in the Y direction orthogonal to the scanning direction when the blade 7a is moved in the Y direction orthogonal to the scanning direction. Since the blade 7a has an approximately quadratic curve edge shape, the difference between FIG. 5A and FIG.
As shown in (C), the inclination is linear.

As described above, in this embodiment, by moving the blade 7a in the Y direction orthogonal to the scanning direction, the inclination unevenness in the Y direction orthogonal to the scanning direction is changed.

The quadratic curve shape of the blade 7a is determined by the amount of unevenness to be corrected. For example, when it is necessary to largely correct the inclination unevenness every time the illumination state is switched, a curve having a large quadratic curve is selected so that the inclination unevenness can be corrected by a slight drive in the orthogonal direction. The curve of the quadratic curve may have a shape in which the periphery is open as shown in FIG. 2A or a shape in which the periphery is narrower.

When the blade 7a has a linear shape (rectangular opening) and the unevenness in the integrated light amount in the Y direction orthogonal to the scanning direction tends to be lower in the peripheral portion, it is desirable that the peripheral portion be open. When the peripheral portion tends to be high, a shape in which the peripheral portion is narrow is desirable. Further, the shape of the blade 7a may be selectively changed.

FIGS. 4A and 4B show another embodiment for correcting unevenness in tilt. Here, four blades 7
By directly changing the inclination of the blade 7e among e to 7h, the inclination exposure unevenness is corrected.

As described above, in the present embodiment, the scanning direction in the scanning projection exposure apparatus is a simple mechanism that drives one light shielding member (blade) among the plurality of blades for limiting the irradiation area. Exposure unevenness (especially tilt unevenness) in a direction orthogonal to the above is satisfactorily corrected.

As a result, a high-resolution pattern can be easily obtained.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described projection exposure apparatus will be described.

FIG. 6 shows a flow of manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD).

In step 1 (circuit design), a circuit of a semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design.

On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 7 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of the present embodiment, it is possible to easily manufacture a highly integrated semiconductor device which has been conventionally difficult to manufacture.

[0058]

According to the present invention, as described above, by setting each element, exposure unevenness, in particular, tilt exposure unevenness (linear change in exposure amount distribution) occurring in a direction perpendicular to the scanning direction can be accurately determined. The pattern on the reticle surface as the first object mounted on the first movable stage can be easily corrected by the projection optical system.
A scanning projection exposure apparatus capable of performing high-precision scanning exposure on a wafer surface as an object with a uniform light amount distribution and easily manufacturing a highly integrated semiconductor device, and a device manufacturing method using the same. Can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a main part of a first embodiment of the present invention.

FIG. 2 is an explanatory view of a variable slit shown in FIG. 1;

FIG. 3 is an explanatory view showing a method for measuring exposure unevenness in the present invention.

FIG. 4 is an explanatory view showing the configuration and function of the variable slit shown in FIG. 1;

FIG. 5 is an explanatory diagram when correcting tilt exposure unevenness by the variable slit in FIG. 2;

FIG. 6 is a flowchart of a device manufacturing method according to the present invention.

FIG. 7 is a flowchart of a device manufacturing method of the present invention.

FIG. 8 is an explanatory diagram showing a state of conventional scanning exposure.

FIG. 9 is a diagram showing one row of a conventional variable slit.

[Explanation of symbols]

 Reference Signs List 1 light source 2 light beam shaping optical system 3 fly's eye lens 4 aperture 5 variable illuminance distribution lens 7 variable slit 7a to 7h each blade constituting variable slit 7 11 reticle 12 projection optical system 13 wafer 14 wafer chuck 15 wafer stage 16, 17 Light intensity detector

Claims (8)

[Claims] An exposure beam having an opening shape extending in a first direction scans a mask and a substrate to be exposed in a second direction intersecting the first direction, thereby exposing the pattern of the mask to the exposure target. In a scanning projection exposure apparatus for sequentially projecting and exposing on a substrate, at least one light shielding member for defining an illumination range on one side in a second direction on the substrate to be exposed is provided, and is defined by the light shielding member. A scanning projection exposure apparatus having a changing means for changing an angle between an edge portion of the illumination range and the first direction. 2. A pattern of the mask and the substrate to be exposed are scanned by scanning the mask and the substrate with an exposure beam having an opening shape extending in a first direction in a second direction intersecting the first direction. In a scanning projection exposure apparatus for sequentially projecting and exposing an image, at least one edge including an edge defining an illumination range on one side in a second direction on the substrate to be exposed.
A scanning projection exposure apparatus comprising: a plurality of light shielding members; and a position changing means for changing the position of the light shielding members in the first direction. 3. A pattern on a first object surface mounted on a first movable stage is illuminated by an illumination system with a light beam having an opening shape extending in a first direction by a lighting system, and the pattern on the first object surface is projected onto a projection optical system. The scanning unit moves the first and second objects in a second direction orthogonal to the first direction on a second object plane mounted on the second movable stage by the system.
In a scanning projection exposure apparatus that performs scanning projection exposure by synchronizing a second movable stage with a speed ratio corresponding to a projection magnification of the projection optical system, the illumination system includes a plurality of illumination units that limit an illumination range on the first object plane. Having a movable slit made of a light shielding member,
One of the plurality of light shielding members, which restricts the illumination range in the second direction, is moved so that the edge of the light shielding member on the side of the illumination area changes in the first direction. A scanning projection exposure apparatus characterized in that: 4. An illumination system illuminates a pattern on a first object surface mounted on a first movable stage with a light beam having an opening shape extending in a first direction, and projects the pattern on the first object surface into projection optics. The scanning unit moves the first and second objects in a second direction orthogonal to the first direction on a second object plane mounted on the second movable stage by the system.
In a scanning projection exposure apparatus that performs scanning projection exposure by synchronizing a second movable stage with a speed ratio corresponding to a projection magnification of the projection optical system, the illumination system includes a plurality of illumination units that limit an illumination range on the first object plane. Having a movable slit made of a light shielding member,
By moving one of the plurality of light shielding members that limits the illumination range in the second direction, the angle between the edge of the light shielding member on the side of the illumination area and the first direction is changed. A scanning projection exposure apparatus characterized by being changed. 5. An illumination system illuminates a pattern on a first object surface mounted on a first movable stage with a light beam having an opening shape extending in a first direction, and projects the pattern on the first object surface into projection optics. The scanning unit moves the first and second objects in a second direction orthogonal to the first direction on a second object plane mounted on the second movable stage by the system.
In a scanning projection exposure apparatus that performs scanning projection exposure by synchronizing a second movable stage with a speed ratio corresponding to a projection magnification of the projection optical system, the illumination system includes a plurality of illumination units that limit an illumination range on the first object plane. Having a movable slit made of a light shielding member,
One of the plurality of light-shielding members, which limits the illumination range in the second direction, is moved to form an edge of the light-shielding member on the side of the illumination area and an edge of another light-shielding member. A scanning projection exposure apparatus characterized in that the shape of an opening is changed. 6. The scanning projection exposure apparatus according to claim 1, wherein the shape of the edge of the light shielding member is approximately a quadratic curve. 7. The light shielding member according to claim 1, wherein the light shielding member is movable in the second direction.
Scanning projection exposure apparatus. 8. A pattern on a reticle surface is projected and exposed on a wafer surface after a reticle and a wafer are aligned using the scanning projection exposure apparatus according to claim 1. And thereafter manufacturing the device through a developing process of the wafer.