JP2003318095A - Flame measuring method and flare measuring device, aligning method and aligner, and method for adjusting aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flare measuring device for quantitatively determining data about an optical flare occurred in an optical system. <P>SOLUTION: The flare measuring device S comprises an illuminating optical system IL and a shape sensing device ST. In the illuminating optical system IL, a first pattern 10 including a light transmitting section T is irradiated by an illuminating light, each of a plurality of regions on a photosensitive substrate P is exposed to a different amount of light via the first pattern 10 and a projection optical system PL, a second pattern 11 including a light shielding section C is irradiated with the illuminating light, and the accumulated value on the photosensitive substrate P is so adjusted that each of the plurality of regions thereon is exposed to a different amount of light via the second pattern 11 and the projection optical system PL. In the shape sensing device ST, the states of formation of the first pattern 10 and the second pattern 11 in each region on the photosensitive substrate P are sensed and, based on the outcome, flare- related data are determined. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flare measuring method and a flare measuring device for measuring flare light generated in an optical system,
The present invention also relates to an exposure method, an exposure apparatus, and an exposure apparatus adjustment method.

[0002]

2. Description of the Related Art Conventionally, various exposure apparatuses have been used when manufacturing semiconductor elements, thin film magnetic heads, liquid crystal display elements and the like by a photolithography process. An exposure apparatus illuminates a mask (or reticle) with exposure illumination light (exposure light) by an illumination optical system, and exposes a pattern formed on the mask via a projection optical system to an object to be exposed (photosensitive agent (photo The resist is transferred onto a substrate such as a wafer or a glass plate to which a resist is applied (hereinafter referred to as a photosensitive substrate).

[0003]

The optical system (illumination optical system, projection optical system, etc.) of the exposure apparatus is composed of a plurality of optical members (lenses, etc.), but when the exposure light passes through the optical system, exposure is performed. Light may be scattered between the optical members to generate flare light. When the flare light is generated, the amount of light in the exposure light irradiation area on the photosensitive substrate (the projection area of the mask pattern in the visual field of the projection optical system) becomes uneven, or the contrast on the image plane of the projection optical system is reduced. As a result, the accuracy of the pattern formed on the photosensitive substrate decreases. Therefore,
When performing the exposure processing, it is necessary to perform flare reduction processing for removing flare light, but in order to perform this flare reduction processing, it is necessary to grasp the position and amount of flare light generated in the optical system. However, heretofore, there has been no effective means for measuring the position and amount of flare light generated in the optical system.

The present invention has been made in view of such circumstances, and a flare measuring method and a flare measuring apparatus, an exposure method and an exposure apparatus capable of quantitatively measuring information about flare light generated in an optical system. , An exposure apparatus adjusting method is provided.

[0005]

In order to solve the above-mentioned problems, the present invention adopts the following configurations associated with FIGS. 1 to 6 shown in the embodiments. The invention according to claim 1 is a flare measuring method for measuring a flare occurring in an optical system (PL) through which illumination light (EL) passes, and at least a part irradiated with the illumination light includes a light transmitting portion (T). A plurality of regions on the photosensitive object (P) are exposed with different exposure amounts via the first pattern (10) and the optical system, and the formation state of the first pattern (light transmitting portion T) in each region is determined. A plurality of regions on the photosensitive object (P) are detected and are exposed with different exposure amounts via the second pattern (11) including the light shielding portion (C) in at least a part irradiated with the illumination light and the optical system. It is a flare measurement method that detects the formation state of the second pattern (light shielding portion C) in each region while exposing, and obtains information about flare based on the detection results of the first and second patterns.

According to this, when the flare light is not generated, the photosensitive layer (resist layer) on the photosensitive object corresponding to the light shielding portion of the second pattern is not irradiated with the illumination light, so that, for example, after the developing process. The transfer image (resist image) of the second pattern (light shielding portion) formed on the photosensitive object does not change in its formation state (eg, shape), but when flare light is generated, the second pattern Since the flare light is irradiated to the photosensitive layer on the photosensitive object corresponding to the light shielding portion, the transfer image (resist image) of the second pattern (light shielding portion) formed on the photosensitive object through the development processing is formed. The state changes. Therefore, the photosensitive object is exposed with different exposure amounts through the first pattern and the optical system, and the photosensitive object is exposed with different exposure amounts through the second pattern and the optical system, so that the first object on the photosensitive object is exposed. By detecting the formation state of the second pattern and the formation state of the second pattern, the light amount of flare light can be calculated based on the formation state of the first pattern (light transmitting portion) and the formation state of the second pattern (light shielding portion) at each exposure amount. It can be determined quantitatively.

Here, the first pattern and the second pattern may be formed at different positions on the same mask, or may be formed on different masks. Further, it may be formed on the mask as one pattern in which the first pattern and the second pattern are combined. Further, the photosensitive object exposed by the first pattern and the photosensitive object exposed by the second pattern may be different from each other, or different areas on the same photosensitive object may be defined by the first pattern and the second pattern, respectively. You may expose. Further, the exposure of the photosensitive object using the first pattern and the exposure of the photosensitive object using the second pattern may be performed at the same time, or the photosensitive object may be exposed using one of the first and second patterns. Therefore, the photosensitive object may be exposed using the other pattern. Particularly in the latter case, the exposure order of the first and second patterns may be arbitrary.

In the flare measuring method according to the first aspect, as in the second aspect, the minimum first photosensitive layer corresponding to the light transmitting portion is eliminated in each region on the photosensitive object exposed with the first pattern. The exposure amount (E _th ) and the minimum second exposure amount (E ₀ ) at which the transfer image of the light shield portion disappears in each region on the photosensitive object exposed by the second pattern are determined, and the first and Information on flare (for example, flare amount (%) = E _th / E ₀ × 100) can be obtained based on the second exposure amount.

In the flare measuring method according to the second aspect, as described in the third aspect, the other pattern has a plurality of patterns (11, 13) having different forming conditions (for example, shape, pitch, line width, etc.) from each other. In addition, the minimum second exposure amount at which the transferred image of the light shielding portion disappears is determined for each of the plurality of patterns, and flare information is obtained based on the first exposure amount and the determined second exposure amount. Can be According to this, it is possible to obtain information regarding flare for each pattern having different forming conditions.

In the flare measuring method according to the second or third aspect, as described in the fourth aspect, the second pattern is provided at a plurality of measuring points in a predetermined area within the visual field of the optical system where the illumination light is irradiated. The minimum second exposure amount at which the transferred image of the light shielding portion disappears is determined for each of the measurement points arranged corresponding to each other, and based on the first exposure amount and the determined second exposure amount, Information about the flare at each measurement point can be obtained. According to this, it is possible to obtain information (including the illuminance distribution or the exposure amount distribution of the illumination light) regarding the flare in the irradiation region of the illumination light.

Further, in the flare measuring method according to any one of claims 1 to 4, as described in claim 5, the photosensitive object has a surface on which a photosensitive layer is formed of a positive photoresist. can do. Further, claims 1 to 5
In the flare measuring method according to any one of claims 1 to 6, as described in claim 6, the photosensitive object exposed in each of the first and second patterns is subjected to development processing, and The formation state of the first and second patterns can be detected in each region.

Further, in the flare measuring method according to any one of claims 1 to 6, as described in claim 7, in the optical system, the first pattern or the second pattern has the first surface (object surface). And a projection optical system (PL) for projecting the pattern arranged on the first surface onto the second surface (image surface) on which the photosensitive object is arranged. Further, in the flare measuring method according to claim 7, when the photosensitive object is exposed by the first and second patterns respectively as described in claim 8, each region of the photosensitive object is substantially optimal for the projection optical system. The positional relationship between the second surface (image surface) of the projection optical system and the photosensitive object can be adjusted so as to maintain the focal position. Further, in the flare measuring method according to claim 7 or 8, as described in claim 9, the optical system changes the illumination light passing through the projection optical system (PL) in synchronization with the relative movement of the mask with respect to the illumination light. The object to be exposed is relatively moved with respect to the object to be exposed, and the object to be exposed is scanned and exposed with the illumination light through the mask and the projection optical system. When exposing each area on the object, the first or second pattern and the photosensitive object may be substantially stationary.

According to a tenth aspect of the invention, the illumination light (E
In a flare measuring device for measuring a flare generated in an optical system (PL) through which L) passes, a first pattern (10) including a light transmitting portion (T) is irradiated at least partially with illumination light,
A plurality of regions on the photosensitive object (P) are exposed with different exposure amounts via the pattern and the optical system, and a second pattern (11) including a light shielding part (C) at least a part of the illumination light is formed. Irradiation device for irradiating and adjusting the integrated light amount of the illumination light on the photosensitive object so that a plurality of regions on the photosensitive object (P) are exposed with different exposure amounts via the second pattern and the optical system. (1, IL), the formation state of the first pattern and the formation state of the second pattern in each region of the photosensitive object are detected, and flare information is obtained based on the detection results of the first and second patterns. Measuring device (S
T, CONT).

A flare measuring device according to a tenth aspect of the present invention is the measuring device according to the eleventh aspect, in which the photosensitive layer corresponding to the light transmitting portion is provided in each region on the photosensitive object exposed with the first pattern. The minimum first exposure amount (E _th ) that disappears and the minimum second exposure amount (E ₀ ) that the transferred image of the light shield part disappears in each area on the photosensitive object exposed by the second pattern are determined. However, the flare information can be obtained based on the first and second exposure amounts. In addition, claim 10
The flare measuring device according to claim 11 or 12,
As described in 1 above, a photosensitive layer is formed on the surface of the photosensitive object with a positive photoresist, and the photosensitive object exposed in each of the first and second patterns is developed.
The measuring device has a first measuring device for each area on the developed photosensitive object.
And the formation state of the second pattern can be detected.

According to this, just like the invention described in claim 1, the photosensitive object is exposed with different exposure amounts through the first pattern and the optical system, and at the same time, through the second pattern and the optical system. By exposing the photosensitive object at different exposure amounts and detecting the formation states of the first and second patterns on the photosensitive object, the formation state of the first pattern (light transmitting portion) and the second state at each exposure amount are detected. The amount of flare light can be quantitatively obtained based on the formation state of the pattern (light shielding portion). Here, the first pattern and the second pattern may be formed at different positions on the same mask, or may be formed on different masks. Further, it may be formed on the mask as one pattern in which the first pattern and the second pattern are combined. Further, the photosensitive object exposed by the first pattern and the photosensitive object exposed by the second pattern may be different from each other, or different areas on the same photosensitive object may be defined by the first pattern and the second pattern, respectively. You may expose. Further, the exposure of the photosensitive object using the first pattern and the exposure of the photosensitive object using the second pattern may be performed at the same time, or the photosensitive object may be exposed using one of the first and second patterns. Therefore, the photosensitive object may be exposed using the other pattern. Particularly in the latter case, the exposure order of the first and second patterns may be arbitrary.

According to a thirteenth aspect of the present invention, the mask is irradiated with illumination light through an illumination optical system (IL), and
A method of exposing an object to be exposed with illumination light via a projection optical system (PL), wherein the measurement method according to any one of claims 1 to 9 relates to flare generated in the optical system (PL) through which the illumination light passes. It is an exposure method that obtains information and adjusts the illuminance distribution or exposure amount distribution of illumination light on the exposed object based on this flare information. According to this
It is possible to obtain information on flare with high accuracy and reduce deterioration in uniformity of illuminance distribution or exposure amount distribution (that is, occurrence of uneven illuminance or uneven exposure amount) due to flare.

According to a fourteenth aspect of the present invention, the mask is irradiated with illumination light through an illumination optical system (IL), and
In a method of exposing an object to be exposed with illumination light via a projection optical system (PL), information regarding flare generated in the optical system through which the illumination light passes is obtained by the measuring method according to any one of claims 1 to 9. At the same time, it is an exposure method for adjusting the exposure conditions of the object to be exposed (for example, the layout of the pattern on the mask, the positions of the optical elements forming the illumination optical system, etc.) based on the flare information. According to this, the information on flare can be obtained with high accuracy, and the line width of the transfer image of the mask pattern transferred onto the exposure target does not change due to flare, so the mask pattern can be accurately covered. It can be transferred onto the exposed body.

Here, in the exposure method according to the thirteenth or fourteenth aspect, for example, the illumination condition of the mask, that is, the light amount of the illumination light on the pupil plane of the illumination optical system, according to the pattern to be transferred onto the exposed object. Distribution may change. In this case, it is preferable to obtain information on flare by exposing the photosensitive object with the first and second patterns under a plurality of illumination conditions and detecting the formation state thereof.

The invention according to claim 15 is the illumination light (E
13. An exposure apparatus comprising: an illumination optical system (IL) for irradiating a mask with L) and a projection optical system (PL) for projecting illumination light onto an object to be exposed. An exposure apparatus that includes the described flare measurement device (S) and obtains information about flare generated in an optical system (PL) through which illumination light passes. According to this, it is possible to accurately obtain the information regarding the flare, and it is possible to always perform highly accurate exposure processing of the exposed object.

In the exposure apparatus according to the fifteenth aspect, as described in the sixteenth aspect, the exposure condition of the object to be exposed, for example, the illuminance distribution of the illumination light or the exposure amount distribution on the object to be exposed, based on the flare information. It is possible to further include an adjusting device for adjusting

The invention according to claim 17 is the illumination light (E
10. An adjusting method of an exposure apparatus, comprising: an illumination optical system (IL) for irradiating a mask with L); and a projection optical system (PL) for projecting illumination light onto an object to be exposed. The optical system (P
L) is a method of adjusting an exposure apparatus, which obtains information about flare that occurs and also obtains an illuminance distribution or exposure amount distribution of illumination light on an exposed object based on the flare information. According to this, since information on flare can be accurately obtained, it is possible to obtain an illuminance distribution or exposure amount distribution of illumination light in which flare is taken into account, and the exposure apparatus can be adjusted efficiently.

According to a seventeenth aspect of the present invention, there is provided an adjusting method for an exposure apparatus, wherein the optical system (IL) through which the illumination light passes is adjusted based on the illuminance distribution or the exposure amount distribution. it can.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of an exposure apparatus and a flare measuring apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of an exposure apparatus EX including a flare measuring apparatus S of the present invention.

In FIG. 1, the exposure apparatus EX includes a light source 1
And an illumination optical system IL that converts the light flux emitted from the light source 1 into the exposure light EL and illuminates the mask (including the reticle) M supported by the mask stage MST with the exposure light EL,
A projection optical system PL that projects the exposure light EL that has passed through the mask M onto the photosensitive substrate P supported by the substrate stage PST.
It has and. In addition, the illumination optical system IL includes the exposure light E
A blind portion (illumination area adjustment device) B is provided as a field diaphragm that adjusts the area, position, and shape of the opening through which L passes to define the illumination range of the mask M by the exposure light EL. In the present embodiment, the exposure apparatus EX illuminates the mask M with the exposure light EL while synchronously moving the mask M and the photosensitive substrate P, and transfers the pattern formed on the mask M onto the photosensitive substrate P, a so-called slit. It is a scanning type exposure apparatus. In the following description, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, and the synchronous movement direction (scanning direction) is X in a plane perpendicular to the Z-axis direction.
A direction (non-scanning direction) perpendicular to the axial direction, the Z-axis direction, and the X-axis direction is defined as the Y-axis direction.

The light source 1 is, for example, an ArF excimer laser having an oscillation wavelength of 193 nm, a fluorine laser (F ₂ laser) having an oscillation wavelength of 157 nm, a krypton dimer laser (Kr ₂ laser) having an oscillation wavelength of 146 nm, and an oscillation wavelength of 126 nm.
Argon dimer laser (Ar ₂ laser) or the like. In this embodiment, an ArF excimer laser which is a pulse laser light source is used as the light source 1.

The illumination optical system IL converts the light flux from the light source 1 into the exposure light EL and illuminates the mask M supported by the mask stage MST with the exposure light EL, and includes a relay lens and the exposure light EL. Optical integrator for making the illuminance distribution of the light uniform, an input lens for making the exposure light EL enter the optical integrator, a condenser lens for collecting the exposure light EL emitted from the optical integrator on the mask M, an illuminance adjustment filter, and the exposure light EL It has a plurality of optical members such as mirrors 3a, 3b, 3c that change the direction of the. Further, in order to change the illumination condition of the mask M, that is, the light amount distribution of the exposure light EL on the pupil plane of the illumination optical system (the size and shape of the secondary light source) according to the pattern to be transferred onto the photosensitive substrate, For example, optics including at least one of a plurality of diffractive optical elements arranged interchangeably in the illumination optical system, a prism (conical prism, polyhedral prism, etc.) movable along the optical axis of the illumination optical system, and a zoom optical system. The unit is arranged between the light source 1 and the optical integrator, and when the optical integrator is a fly-eye lens, the intensity distribution of the illumination light on the incident surface, and when the optical integrator is an internal reflection type integrator, the incident light is incident. The incident angle range of the illumination light on the surface is variable. As a result, it is possible to significantly reduce the light amount loss due to the change of the illumination condition of the mask M.

The blind portion B sets an illumination area on the mask M to which the exposure light EL is irradiated. In this embodiment, the blind portion B is separated from the conjugate plane of the pattern surface of the mask M by a predetermined distance in the illumination optical system IL. A fixed field stop having a fixed rectangular aperture width, which is displaced in the optical axis direction, and an illumination optical system IL.
And a variable field diaphragm which is arranged substantially conjugate with the pattern surface of the mask M and changes the width of the illumination region in the scanning direction according to the movement of the mask M during scanning exposure. The exposure light EL that has passed through the blind portion B is transferred to the mask stage MS.
A part (illumination area) of the pattern area of the mask M supported by T is illuminated with a substantially uniform illuminance. In the present embodiment, the blind area B causes the illumination area to be projected onto the projection optical system PL.
Within the field of view, the rectangular shape is defined to extend along the Y-axis direction with the optical axis AX as the center. Further, a drive mechanism (not shown) for driving the blind portion B (variable field diaphragm) is a control device CON.
Controlled by T.

The mask stage MST supports the mask M and is capable of two-dimensional movement and minute rotation within a plane perpendicular to the optical axis AX of the projection optical system PL, that is, within an XY plane. The mask stage MST is driven by a mask stage drive unit MSTD such as a linear motor, and the mask stage drive unit MSTD is controlled by the control device CONT. The control unit CONT moves the mask stage MST at a predetermined speed (synchronous moving speed, scanning speed) V via the mask stage driving unit MSTD so that the mask M is moved relative to the exposure light EL during scanning exposure. Move in the axial direction (+ X direction). Also, the mask stage MS
The position and rotation amount of T in the XY plane are detected by the laser interferometer 4. The detection result of the laser interferometer 4 is output to the control device CONT, and the control device CONT performs position control (and speed control) of the mask stage MST based on the detection result of the laser interferometer 4.

The projection optical system PL is composed of a plurality of optical members (lenses, etc.), and the pattern of the mask M arranged on the first surface (object surface) is arranged on the second surface (image surface). Image onto the photosensitive substrate P. The projection magnification of the projection optical system PL is set to 1 / N. In this embodiment, the projection optical system PL is a reduction system with a projection magnification of 1/4 or 1/5. The projection optical system PL may be either a unity magnification system or a magnifying system. The projection optical system PL also has an imaging characteristic control device (not shown) that corrects optical characteristics.
The image-forming characteristic control device, for example, moves the optical members that form the projection optical system PL (adjusts the spacing, etc.) or adjusts the gas pressure between the optical members to adjust the projection optical system PL.
The optical characteristics such as the projection magnification and aberration (field curvature, distortion, etc.) are adjusted. The imaging characteristic control device is a control device CONT
Controlled by. At this time, the mask M, the photosensitive substrate P,
And the exposure light E between the optical members forming the projection optical system PL.
L may be scattered and flare light may be generated.

The substrate stage PST supports the photosensitive substrate P and is two-dimensionally movable within a plane perpendicular to the optical axis AX of the projection optical system PL, that is, within an XY plane. Further, the substrate stage PST is provided so as to be movable also in the Z-axis direction, and the θz direction (rotational direction around the Z-axis), θx
It is also movably provided in the direction (rotational direction around the X axis) and the θy direction (rotational direction around the Y axis). The substrate stage PST is a substrate stage drive unit PS such as a linear motor.
Driven by the TD, the drive unit PSTD is the control unit CO
Controlled by NT. The control unit CONT moves the substrate stage PST to move the photosensitive substrate P relative to the exposure light EL that has passed through the projection optical system PL in synchronization with the relative movement of the mask M to the exposure light EL during scanning exposure.
It is moved in the X-axis direction (-X direction) at a predetermined speed V / N via the substrate stage drive unit PSTD. The position of the substrate stage PST in the XY plane and the amount of rotation are detected by the laser interferometer 5. Furthermore, the substrate stage PS
The position in the Z-axis direction and the amount of tilt of the photosensitive substrate P supported by T are detected by a focus position detection system 7 including a light projecting section 7a and a light receiving section 7b. The detection results of the laser interferometer 5 and the focus position detection system 7 are output to the control device CONT, which controls the laser interferometer 5 and the focus position detection system 7.
The position control (and speed control) of the substrate stage PST is performed on the basis of the detection result.

Next, the exposure apparatus EX having the above-mentioned structure
In, the method of measuring the flare generated on the optical path of the exposure light EL will be described. Hereinafter, a method of measuring flare light generated between the mask M including the projection optical system PL and the photosensitive substrate P will be described. FIG. 2 is a diagram showing a mask M used for flare measurement according to the present embodiment.
2A is a plan view showing the overall structure of the mask M, FIG.
3 is an enlarged view of a flare measurement pattern (first and second patterns of the invention) 10 formed on the mask M. FIG.

FIG. 2A shows the center (illumination optical system IL and projection optical system PL) of the illumination area 20 irradiated with the exposure light EL.
2) and the center of the pattern area PA of the mask M are coincident with each other. In the present embodiment, when the center of the illumination area 20 coincides with the center of the mask M, the illumination area 20 Of the illumination area 2 on the mask M so that the flare measurement patterns 10 are arranged at the center and the four corners of the
The flare measurement pattern 10 is formed at each of five light-shielding portions, which are formed to have a size equal to or larger than 0, as light transmitting portions T. As a result, the exposure light EL is formed on the photosensitive substrate P.
Of a plurality of measurement points (in this example, 5 in this example, the exposure image is irradiated as a predetermined region, that is, the region where the pattern image of the mask M is projected, which is conjugate with the illumination region 20 with respect to the projection optical system PL). Flare measurement pattern 1 for each point)
A projected image of 0 is formed, and flare measurement is possible at each measurement point. Further, when the photosensitive substrate P is exposed with the exposure light EL through the mask M, the exposure light E with which the mask M is irradiated is exposed.
Of the L, the light other than the light applied to the flare measurement pattern 10 (light transmitting portion T) is reflected by the light shielding portion and does not reach the photosensitive substrate P. In the present embodiment, five flare measurement patterns 10 are formed on the mask M, but the number of flare measurement patterns 10 may be one, or a plurality other than five.

As shown in FIG. 2B, the flare measuring pattern 10 is formed on the substantially square light transmitting portion T of the mask M. In this embodiment, the second pattern (11,
At least a part of the light transmitting portion T excluding the light shielding portion C of 13) is the first pattern of the present invention, and the second pattern of the present invention is formed under mutually forming conditions (eg, shape, pitch,
Multiple patterns with different line widths, periodic directions, etc., ie 4
One line and space pattern 11 and one box pattern 13 are formed. The line-and-space pattern 11 is formed by forming light-shielding portions (line portions) C having a line width of 6 μm at a pitch of 12 μm, and the width of the space portions (light transmitting portions) Ts sandwiched between the line portions C is the line portion C. And the same value, that is, 6 μm.
Further, the box pattern 13 has, for example, 30
It is a square (rectangular) light-shielding portion of μm. Further, the four line-and-space patterns 11 are arranged around the box pattern 13, and the two line-and-space patterns 11 arranged on both sides of the box pattern 13 in the X-axis direction are light-shielded with the X-axis direction as the longitudinal direction. Part C
Are arranged at regular intervals in the Y-axis direction and are arranged on both sides of the box pattern 13 in the Y-axis direction.
The one line-and-space pattern 11 is provided with light-shielding portions C whose longitudinal direction is in the Y-axis direction and are periodically arranged in the X-axis direction at equal intervals.

In this embodiment, the line and space pattern 11, that is, the dense pattern is formed as the second pattern of the present invention, but an isolated pattern may be formed instead. Further, in the present embodiment, a plurality of patterns (11, 13) are provided as the second pattern of the present invention, but only one pattern may be provided. Furthermore, in the present embodiment, at least a part of the light transmitting portion T of the mask M on which the line and space pattern 11 and the box pattern 13 (second pattern) are formed is also used as the first pattern of the present invention, that is, the present invention. Although the flare measurement pattern 10 in which the first pattern and the second pattern are integrally formed is used, for example, the first pattern of the present invention including a light transmission part in at least a part thereof in addition to the flare measurement pattern 10. May be formed on the mask M, and the first pattern and the second pattern of the present invention may be separated from each other on the mask M and provided at different positions.

As described above, the mask M has a plurality (five in this example) of flare measurement patterns 10, and each flare measurement pattern 10 transmits the exposure light EL emitted from the illumination optical system IL. The light-transmitting portion (light-transmitting portion) T serving as a first pattern and the line-and-space pattern 11 and the box pattern 13 including the light-shielding portion (light-shielding portion) C that reflects the exposure light EL are provided as the second pattern. There is. Here, in the illumination area 20 of the mask M to which the exposure light EL is irradiated, except the light transmitting portion T where the flare measurement pattern 10 is formed, it is a light shielding portion, and the exposure light E
The transmissivity of the transparent portion T with respect to L is set to, for example, 90% or more. That is, only about 90% or more of the light emitted to the flare measurement pattern 10 (light transmitting portion T) in the illumination region 20 of the mask M to which the exposure light EL is emitted passes through the mask M, and the rest is the mask M. Is reflected by the light shielding part of.

FIG. 3 is a schematic diagram showing an apparatus configuration for measuring flare light generated between the mask M including the projection optical system PL and the photosensitive substrate P. As shown in FIG. 3, a flare measuring device S for measuring flare generated in the projection optical system PL.
Is an illumination optical system (irradiation device) IL for irradiating the exposure light EL on the optical path of the exposure light EL including the projection optical system PL, and the mask described using FIG. 2 arranged on the optical path of the exposure light EL. M, the exposure light EL that has passed through the mask M and the projection optical system PL, and the photosensitive substrate P having a photosensitive layer formed on the surface with a positive photoresist (photosensitizer), and the exposure light EL. Flare measurement pattern 10 on the photosensitive substrate P
, The shape detecting device ST for detecting the shape of the photosensitive agent in this embodiment. Shape detector ST
Is composed of, for example, an optical sensor for detecting a local region on the photosensitive substrate P irradiated with white light with an image sensor, or an SEM, and the detection result of the shape detection device ST is output to the control device CONT. As shown in FIG.
The exposure light EL applied to the light-shielding portions C of the line-and-space pattern 11 and the box pattern of the flare measurement pattern 10 is blocked without reaching the photosensitive substrate P on the substrate stage PST. On the other hand, the exposure light EL that has passed through the transparent portion T of the flare measurement pattern 10.
Is irradiated onto the photosensitive substrate P on the substrate stage PST via the projection optical system PL.

Next, a procedure for measuring flare light generated in the projection optical system PL will be described with reference to FIG. The mask M described with reference to FIG. 2 is installed on the mask stage MST, and the photosensitive substrate P is mounted on the substrate stage PST.
After the installation, the control device CONT starts flare measurement processing (step S0).

First, the control unit CONT has the illumination optical system I.
The mask stage MST is positioned so that the center of the illumination area 20 irradiated with the exposure light EL by L and the center of the pattern area PA of the mask M substantially coincide with each other. As a result, the flare measurement pattern 10 arranged substantially in the center of the mask M substantially coincides with the optical axes of the illumination optical system IL and the projection optical system PL, and within the exposure region where the exposure light EL is irradiated on the photosensitive substrate P. 5 in the illumination area 20 corresponding to a plurality of measurement points of
The flare measurement pattern 10 is arranged at each point.
Then, the five flare measurement patterns 10 are simultaneously illuminated with the exposure light EL, and the projection image is projected onto the photosensitive substrate P by the projection optical system PL (step S1).

Next, the control unit CONT exposes the plurality of first regions on the photosensitive substrate P with different exposure doses via the mask M and the projection optical system PL, so as to expose the substrate via the substrate stage drive unit PSTD. The exposure light EL irradiated onto the photosensitive substrate P by driving the stage PST to move the photosensitive substrate P in a step-and-repeat method and controlling the control parameters (applied voltage, trigger pulse, etc.) of the light source 1, for example. By changing at least one of the number of pulses and the intensity (pulse energy) of the exposure light EL, the integrated light amount (exposure amount) of the exposure light EL is made different for each first region on the photosensitive substrate P (step S2). .

Here, during the exposure of each first region on the photosensitive substrate P, the mask stage MST and the substrate stage PST are substantially stationary, that is, the mask M and the photosensitive substrate P are substantially stationary and each first region is exposed. Exposure of one area is performed. Further, when each of the plurality of first regions is exposed, each first region is arranged at the optimum focus position (best focus position) of the projection optical system PL, that is, the image plane of the projection optical system PL within the above-mentioned exposure region. And the surface of the first region are substantially matched with each other, for example, by controlling the position of the photosensitive substrate P in the Z-axis direction and the rotation angle around the X-axis and the Y-axis (the tilt angle with respect to the XY plane),
The relative positional relationship between the image plane of the projection optical system PL and the photosensitive substrate (first area) is adjusted. Further, the exposure amount in the first area that is first exposed on the photosensitive substrate P is set to be smaller than the optimum exposure amount according to the photosensitive characteristics (sensitivity of the photosensitive agent) of the photosensitive substrate P. Then, the exposure amount is increased by a predetermined amount for each first region on the photosensitive substrate P, and the exposure amount in the first region that is finally exposed on the photosensitive substrate P is the same as, for example, the above-described optimum exposure amount. It is set to a degree. In the first region where the exposure amount is sufficiently smaller than the optimum exposure amount on the photosensitive substrate P, the photosensitive agent corresponding to the light transmitting portion T (first pattern) of the flare measurement pattern 10 is completely removed even after the development process. Is not removed (is not lost). Then, with these different exposure amounts,
Development processing (predetermined processing) of the photosensitive substrate P whose area has been exposed
After that, each of the first
As the formation state of the flare measurement pattern 10 (light transmitting portion T) in the region, its surface shape, that is, the shape of the photosensitive agent is measured (step S3).

Here, the exposure amount for the photosensitive substrate P is gradually changed.
The exposure level is higher than the predetermined exposure level (first exposure level).
Then, the portion of the photosensitive substrate P irradiated with the exposure light EL
Corresponding to the formation position of the transparent portion T of the mask M
The photosensitive agent at the position of the photosensitive substrate P disappears after the development processing.
(Removed). The controller CONT is the shape detector S
Based on the detection result of T, the light-transmitting portion is changed according to the change of the exposure amount.
The amount of exposure when the shape of the photosensitizer corresponding to T changes,
That is, the photosensitive agent on the photosensitive substrate P corresponding to the light transmitting portion T is developed.
Minimum exposure amount when it disappears (is removed) by processing
(First exposure amount) E _thIs calculated (step S4). In addition,
In this embodiment, the exposure light EL is irradiated onto the photosensitive substrate P.
Corresponding to the 5 measurement points in the exposure area,
Five flare measurement patterns 1 in each first area on the plate P
Since the image of 0 is projected, it is for flare measurement in each 1st area
The pattern 10 is formed, that is, the formation state is detected for each transparent portion T.
The minimum exposure amount (first exposure) for each measurement point in the exposure area.
Amount) E_thAsk for.

Next, the control unit CONT sends a command to the light source 1 to start oscillation of the exposure light EL, and the exposure light EL
Then, the five flare measurement patterns 10 in the illumination area 20 are simultaneously illuminated (step S5). As a result, the projection optical system PL projects the projected image of each flare measurement pattern 10 onto the photosensitive substrate P. Then, the control device CON
T is the same as in step S2 described above, and the plurality of second areas different from the plurality of first areas exposed in step S2 on the photosensitive substrate P are differently exposed through the mask M and the projection optical system PL. Substrate stage PS in order to expose in quantity
While driving T to move the photosensitive substrate P by the step-and-repeat method, for example, the control parameter of the light source 1 is controlled, and the number of pulses of the exposure light EL irradiated onto the photosensitive substrate P and the intensity of the exposure light EL are controlled. By changing at least one of the exposure light EL and the exposure light EL for each second region on the photosensitive substrate P.
The integrated light amount (exposure amount) is changed (step S6).
At this time, the respective second areas are arranged at the optimum focus position (best focus position) of the projection optical system PL, that is, the image plane of the projection optical system PL and the surface of the second area substantially coincide with each other within the above-mentioned exposure area. As described above, for example, the position of the photosensitive substrate P in the Z-axis direction and the rotation angles about the X-axis and the Y-axis (tilt angles with respect to the XY plane) are controlled to control the image plane of the projection optical system PL and the photosensitive substrate (second region). ) Is adjusted relative position. In addition, the exposure amount of the second region that is exposed first among the plurality of second regions is set to be the smallest, and the exposure amount is set to be larger than, for example, the optimum exposure amount described above. Therefore, even the smallest exposure amount in step S6 is set larger than the largest exposure amount in step S2.

Then, after the photosensitive substrate P exposed with these different exposure amounts is developed (predetermined process), the flare measuring pattern 10 (first region) in each second region on the photosensitive substrate P is formed by the shape detecting device ST. The surface shape, that is, the shape of the photosensitive agent is measured as the formation state of the two patterns 11 and 13) (step S7).

When flare light is generated between the mask M including the projection optical system PL and the photosensitive substrate P by gradually increasing the exposure amount with respect to the photosensitive substrate P, flare is generated as shown in FIG. The exposure amount at the position on the photosensitive substrate P (the image plane of the projection optical system PL) corresponding to the formation position of the light shielding portion C of the measurement pattern 10 is not zero. That is, the exposure amount at the position on the photosensitive substrate P corresponding to the light-shielding portion C where the exposure amount should originally be zero becomes non-zero due to the irradiation of the flare light. In FIG. 5, the horizontal axis represents the image plane position and the vertical axis represents the exposure amount of the exposure light EL. Therefore, when flare light is generated, the flare light that moves by increasing the exposure amount of the exposure light EL on the photosensitive substrate P exposes the photosensitive agent at the position on the photosensitive substrate P corresponding to the light shielding portion C. . In this case, originally, the photosensitive agent at the position on the photosensitive substrate P corresponding to the light shielding portion C should not be removed even after the developing process, but the photosensitive agent disappears after the developing process by irradiation of flare light. Will be (removed). At this time, of course, the photosensitive agent also disappears (is removed) at the position on the photosensitive substrate P corresponding to the formation position of the transparent portion T of the flare measurement pattern 10.

The controller CONT is the shape detecting device ST.
It is determined whether the flare light has exposed the photosensitive agent at the position on the photosensitive substrate P corresponding to the light shielding portion C based on the detection result of 1. Specifically, the control device CONT detects the shape (presence / absence) of the photosensitive agent on the photosensitive substrate P corresponding to the light shielding portion C of the flare measurement pattern 10 with the shape detection device ST, and the detection result of the shape detection device ST. Based on the above, the exposure amount (second exposure amount) when the shape of the photosensitizer corresponding to the light shielding part C changes in accordance with the change of the exposure amount, that is, the photosensitizer on the photosensitive substrate P corresponding to the light shielding part C is The minimum exposure amount (second exposure amount) when removed after development processing (in other words, the resist image formed after the development processing disappears as a transfer image of the light shielding portion C)
E ₀ is calculated (step S8). It should be noted that in the present embodiment, 5 in the exposure area on the photosensitive substrate P where the exposure light EL is irradiated.
Each second on the photosensitive substrate P corresponding to each of the two measurement points.
Since the images of the five flare measurement patterns 10 are projected in the area, the flare measurement patterns 10 in the respective second areas,
That is, the formation state is detected for each light-shielding portion C, and the minimum exposure amount (second exposure amount) E ₀ is obtained for each measurement point in the exposure region.

Here, in step S8, the light-shielding portion C
Since the amount of flare generated varies depending on the pattern shape of the line and space pattern 11
The value of the minimum exposure amount when the shape of the photosensitive agent on the photosensitive substrate P corresponding to the change is different from the value of the minimum exposure amount when the shape of the photosensitive agent on the photosensitive substrate P corresponding to the box pattern 13 changes. . The control device CONT is a shape detection device ST
The shape of the photosensitive agent on the photosensitive substrate P corresponding to the line-and-space pattern 11 changes at each measurement point in the above-described exposure region based on the detection result of (i.e., the resist image of the line-and-space pattern 11 disappears). to) minimum exposure amount E ₀₁ when, and box pattern 13 is the shape of the photosensitive agent on the corresponding photosensitive substrate P changes to the (i.e., resist image disappears box pattern 13) the minimum exposure amount E ₀₂ when Ask.

The control unit CONT sets the minimum exposure amount E _th when the photosensitive agent on the photosensitive substrate P corresponding to the light transmitting portion T of the flare measuring pattern 10 obtained in step S4 disappears by the developing process, and step S8. The ratio with the minimum exposure amount E ₀ when the photosensitive agent on the photosensitive substrate P corresponding to the light-shielding portion C of the flare measurement pattern 10 obtained in step 3 disappears due to the developing process (step S9). As a result, the control device CON
For T, the flare amount (flare light amount) generated between the mask M and the photosensitive substrate P can be obtained from the ratio (E _th / E ₀ ) obtained in step S9. For example, when the exposure amount of the portion corresponding to the light transmitting portion of the mask M on the photosensitive substrate P via the projection optical system PL is E _m, the amount of flare E _{f is, E f = E m (E} th / E ₀ ) (1) Further, since the flare amount varies depending on the pattern shape, the flare amount E _f1 based on the line and space pattern 11 and the flare amount E _f2 based on the box pattern 13 are respectively E _f1 = E _m (E _th / E ₀₁ ) ... (2) E _f2 = E _m (E _th / E ₀₂ ) ... (3) Thus, when flare light is generated,
The amount of flare light based on each position and the pattern shape can be calculated based on the equations (1) to (3). Further, since the flare measurement pattern 10 is arranged at a plurality of points within the illumination area 20, it is possible to obtain the flare amount at each of a plurality of measurement points within the exposure area conjugate with the illumination area 20 with respect to the projection optical system PL. The control device CONT can obtain the illuminance distribution (or the exposure amount distribution) of the exposure light EL in the exposure region, taking into consideration the influence of flare.

After obtaining the flare amount and the illuminance distribution (or exposure amount distribution) of the exposure light EL generated by the flare light, the control unit CONT is provided in, for example, the projection optical system PL based on the obtained result. By moving the optical element (lens or the like) or tilting it with respect to the optical axis AX by the image forming characteristic control device, or adjusting the position of the optical element (optical integrator, density filter, or the like) of the illumination optical system IL. A flare reduction process for removing flare light (that is, adjustment of exposure conditions of the photosensitive substrate including uniforming of illuminance distribution or exposure amount distribution of the exposure light EL) is performed (step S10). The mask for manufacturing the device and the photosensitive substrate are the mask stage MST and the substrate stage PS.
After being installed at T, an exposure process is performed and the process ends (step S11).

As described above, a plurality of regions on the photosensitive substrate are exposed with different exposure amounts via the flare measurement pattern 10 (mask M) and the projection optical system PL, and
By detecting the formation state of the flare measurement pattern 10 (presence or absence of resist in this example) in each region by the shape detection device ST, the shape of the photosensitive agent corresponding to the light transmitting portion T changes (that is, the photosensitive agent). To obtain the exposure amount E ₀ when the shape of the photosensitive agent corresponding to the light shielding portion C changes (that is, the transferred image of the light shielding portion C disappears) with reference to the exposure amount E _th. Therefore, the obtained exposure amount E
Information related to flare based on _th and E ₀ (for example, the ratio between the exposure amount E _th and the exposure amount E ₀ , or the equation (1) above).
It is possible to quantitatively determine the amount of flare represented by.

According to the flare measuring method of the present invention, it is possible to accurately compare flares in a plurality of exposure apparatuses. However, since the flare amount generated varies depending on the pattern shape of the flare measurement pattern 10 (light-shielding portion C), it is preferable to use the same pattern when measuring flare with each of a plurality of exposure apparatuses.

In the above embodiment, the illumination condition of the mask, that is, the light amount distribution of the exposure light EL on the pupil plane of the illumination optical system IL may be changed according to the pattern to be transferred onto the photosensitive substrate. It is preferable to measure the flare under each illumination condition. That is, under each of the plurality of illumination conditions used in the exposure apparatus of FIG. 1, steps S1 to S9 of FIG.
Is repeatedly executed to measure flare for each lighting condition.
Further, in the above embodiment, the flare reduction process (adjustment of the exposure condition) is performed in step S10 of FIG.
For example, the layout of the pattern to be transferred onto the photosensitive substrate may be changed to prevent the line width of the pattern image from changing due to flare.

In the above embodiment, both the line and space pattern 11 and the box pattern 13 are used as the second pattern of the present invention when performing flare measurement. The flare measurement may be performed using only one of the two instead of using both. Further, in the above-mentioned embodiment, the box pattern 13 has a square shape, but the shape thereof may be arbitrary and may be a rectangular shape or a hexagonal shape. Further, the size of the box pattern 13 can be set arbitrarily. Also, line and space pattern 1
With respect to No. 1, the forming conditions such as the line width and the pitch can be set arbitrarily. Further, in the above embodiment, the line and space pattern 11 is arranged around the box pattern 13, but the line and space pattern 1
The positional relationship between 1 and the box pattern 13 is also arbitrary.

In the above embodiment, the flare measuring pattern 1 in which the first and second patterns of the present invention are integrally formed
Although 0 is used, both patterns may be formed separately, or both separated patterns may be formed at different positions on the same mask or different masks. Further, in the above embodiment, the light transmitting portion T (first pattern) and the light shielding portion C (second pattern 11, 13) of the flare measurement pattern are transferred to different areas on the same photosensitive substrate, respectively. , The first pattern and the second pattern may be transferred onto different photosensitive substrates.

In the above embodiment, the light transmitting portion T (first pattern) and the light shielding portion C of the flare measuring pattern 10 are used.
(Second pattern) and a different exposure process (step S
However, the light transmitting portion T (first pattern) is not necessarily the light shielding portion C (second).
The exposure does not have to be performed before the pattern), and the exposure order may be arbitrary. Further, for example, the change range of the exposure amount in step S2 is greatly expanded, that is, step S2.
By setting the maximum exposure amount in step S6 to the same value as the maximum exposure amount in step S6, the light transmitting portion T (first pattern) and the light shielding portion C (second pattern) are formed on the photosensitive substrate in the same exposure step. To transfer to steps S5 to S
7 may be omitted to reduce the measurement time.

In the above embodiment, when the exposure amount is adjusted, the output of the light source 1 is adjusted to adjust the illuminance on the photosensitive substrate P, but the illuminance adjusting filter is provided in the illumination optical system IL. May be provided, and the illuminance on the photosensitive substrate P, and thus the exposure amount, may be adjusted by driving this filter. Of course, the exposure time may be controlled to adjust the exposure amount.

In the above-described embodiment, the flare light generated between the mask M including the projection optical system PL and the photosensitive substrate P is measured by transferring the image of the pattern of the mask M onto the photosensitive substrate P. The flare light measurement can be performed with the photosensitive substrate P actually mounted on the substrate stage PST. Therefore, since the component of the reflected light on the photosensitive substrate P can also be detected, accurate measurement can be performed.

Further, in the above embodiment, a plurality of flare measuring patterns 10 are formed on the mask M.
Only one flare measurement pattern may be formed. In this case, by moving the mask stage MST and sequentially arranging the flare measurement pattern 10 at a plurality of points in the illumination region 20, a plurality of flare measurement patterns in the exposure region are formed. Information about flare may be detected at each measurement point.

In the above embodiment, the illumination area 20 irradiated with the exposure light EL on the mask M having the flare measurement pattern 10 is under the same condition (that is, the size) as when the pattern of the device manufacturing mask is transferred. , Position and shape are equal).

As the exposure apparatus EX of this embodiment,
In addition to the scanning type exposure apparatus that moves the mask M and the photosensitive substrate P in synchronism to expose the pattern of the mask M, any of a static exposure method in which the mask M and the photosensitive substrate P are substantially stationary may be adopted.

In each of the above embodiments, the use of the exposure apparatus EX is not limited to the exposure apparatus for semiconductor manufacturing, and for example, an exposure apparatus for liquid crystal that exposes a liquid crystal display element pattern on a rectangular glass plate, It is also widely applicable to an exposure apparatus for manufacturing a display device such as a plasma display or an organic EL, a thin film magnetic head, an image pickup device, a micromachine, a DNA chip, a mask (reticle) and the like.

The projection optical system PL may be any of a reduction system, a unity magnification system, and an enlargement system, and further may be a refraction system, a catadioptric system, or a reflection system. Further, the light source 1 is not limited to an excimer laser or the like, and may be, for example, a mercury lamp, a harmonic generator such as a YAG laser or a semiconductor laser, or a continuous light source instead of a pulse light source. Further, the exposure light EL is not limited to ultraviolet light, and may be, for example, EUV light, hard X-ray, charged particle beam such as electron beam or ion beam.

As described above, the exposure apparatus according to the embodiment of the present application uses various subsystems including the constituent elements recited in the claims of the present application, with predetermined mechanical accuracy, electrical accuracy, and
It is manufactured by assembling so as to maintain optical accuracy. Before and after this assembly, adjustments to achieve optical precision for various optical systems, adjustments to achieve mechanical precision for various mechanical systems, and various electrical systems to ensure these various types of precision are made. Are adjusted to achieve electrical accuracy. The process of assembling the exposure apparatus from the various subsystems includes mechanical connection, electrical circuit wiring connection, air pressure circuit pipe connection, and the like between the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies of the exposure apparatus as a whole. It is desirable that the exposure apparatus be manufactured in a clean room where the temperature and cleanliness are controlled.

As shown in FIG. 6, a semiconductor device has a step 201 of designing the function and performance of the device, a step 202 of manufacturing a mask (reticle) based on this design step, and a substrate (wafer) serving as a base material of the device. , A glass plate) 203, a wafer processing step 204 for exposing a reticle pattern onto a wafer by the exposure apparatus of the above-described embodiment, a device assembly step (including a dicing step, a bonding step, a packaging step) 205, and an inspection step. It is manufactured through 206 and the like.

[0064]

As described above, according to the present invention,
The photosensitive object is exposed with different exposure amounts via the first pattern and the optical system, and the photosensitive object is exposed with different exposure amounts via the second pattern and the optical system, and the first and the first on the photosensitive object are exposed. By detecting the formation state of two patterns,
The light amount of flare light can be quantitatively obtained based on the formation state of the first pattern (light transmitting portion) and the formation state of the second pattern (light shielding portion) at each exposure amount. Therefore,
Since the processing for reducing flare can be accurately performed based on the obtained flare information, the exposure accuracy in the exposure processing can be improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram for explaining an embodiment of an exposure apparatus equipped with a flare measurement device of the present invention.

FIG. 2 is a diagram showing an embodiment of a mask used in the flare measuring method of the present invention.

FIG. 3 is a schematic diagram for explaining an embodiment of a flare measuring method and a measuring device of the present invention.

FIG. 4 is a diagram for explaining an embodiment of a flare measuring method of the present invention.

FIG. 5 is a diagram for explaining an irradiation amount of exposure light with which a photosensitive substrate is irradiated.

FIG. 6 is a flow chart diagram for explaining an example of a manufacturing process of a semiconductor device.

[Explanation of symbols]

1 light source (light source device) 1 flare measurement pattern (first pattern, second pattern) 11 line and space pattern 13 box pattern AX optical axis B blind part (irradiation range adjusting device) C light shielding part (light shielding part) CONT control Device EL exposure light (illumination light) EX exposure device IL illumination optical system (illumination device) M mask P photosensitive substrate PL projection optical system S flare measuring device ST shape detection device T light transmitting part (light transmitting part)

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Taro Ogata             Marunouchi 3 2-3 No. 3 shares, Chiyoda-ku, Tokyo             Ceremony Company Nikon F-term (reference) 5F046 AA28 BA04 DA01 DA12 DB01

Claims (18)

[Claims] 1. A flare measuring method for measuring flare occurring in an optical system through which illumination light passes, comprising: a first pattern including a light transmitting portion in at least a part of the illumination light, and the optical system. A plurality of areas on the photosensitive object are exposed with different exposure amounts, and a formation state of the first pattern in each area is detected, and a light shielding portion is included in at least a part irradiated with the illumination light. Through the second pattern and the optical system, a plurality of regions on the photosensitive object are exposed with different exposure amounts, and the formation state of the second pattern in each region is detected, A flare measuring method, wherein information on the flare is obtained based on a detection result of the second pattern. 2. A minimum first exposure amount at which the photosensitive layer corresponding to the light transmitting portion disappears in each area on the photosensitive object exposed by the first pattern, and on the photosensitive object exposed by the second pattern. 2. The minimum second exposure amount at which the transferred image of the light shield portion disappears is determined in each area of, and information regarding the flare is obtained based on the first and second exposure amounts. Flare measurement method described in. 3. The second pattern includes a plurality of patterns whose forming conditions are different from each other, and determines the minimum second exposure amount at which the transferred image of the light shielding portion disappears in each of the plurality of patterns, and The flare measuring method according to claim 2, wherein the flare information is obtained based on one exposure amount and the determined second exposure amount. 4. The second pattern is arranged corresponding to each of a plurality of measurement points in a predetermined area irradiated with the illumination light in the field of view of the optical system, and the light shield unit is provided for each of the measurement points. And determining the minimum second exposure amount at which the transferred image disappears, and obtaining information on the flare at each measurement point based on the first exposure amount and the determined second exposure amount. The flare measuring method according to claim 2 or 3, which is characterized. 5. The photosensitive layer has a photosensitive layer formed of a positive photoresist on the surface thereof.
The flare measurement method according to any one of 4 to 4. 6. The photosensitive object exposed by each of the first and second patterns is subjected to development processing, and the formation state of the first and second patterns is detected in each area on the photosensitive object subjected to the development processing. The flare measuring method according to any one of claims 1 to 5. 7. The optical system according to claim 1, wherein the first pattern or the second pattern is arranged on a first surface, and the photosensitive object is arranged on a pattern arranged on the first surface.
7. The flare measuring method according to claim 1, further comprising a projection optical system for projecting on a surface. 8. The projection optical system so that, when exposing the photosensitive object with the first and second patterns, each region of the photosensitive object is substantially maintained at an optimum focus position of the projection optical system. The flare measuring method according to claim 7, wherein a positional relationship between the second surface of the photosensitive member and the photosensitive object is adjusted. 9. The optical system relatively moves an object to be exposed with respect to the illumination light passing through the projection optical system in synchronization with the relative movement of the mask with respect to the illumination light, so that the mask and the projection optical system are moved. Is provided in a scanning exposure apparatus that scans and exposes the exposed object with the illumination light through, and when each area on the photosensitive object is exposed with the first and second patterns using the scanning exposure apparatus, 9. The flare measuring method according to claim 7, wherein the first or second pattern and the photosensitive object are made substantially stationary. 10. A flare measuring device for measuring flare generated in an optical system through which illumination light passes, wherein the illumination light irradiates a first pattern including at least a part of a light transmitting portion, and the first pattern and the optical system. A plurality of areas on the photosensitive object are exposed with different exposure amounts, and the illumination light irradiates at least a part of the second pattern including a light shielding portion, and the second pattern and the optical system. A plurality of regions on the photosensitive object are exposed with different exposure amounts via, respectively, an irradiation device that adjusts the integrated light amount of the illumination light on the photosensitive object, and the area in each region of the photosensitive object. While detecting the formation state of the first pattern and the formation state of the second pattern,
A flare measuring apparatus comprising: a measuring apparatus that obtains information about the flare based on the detection results of the first and second patterns. 11. The measuring device comprises: a minimum first exposure amount at which a photosensitive layer corresponding to the light-transmitting portion disappears in each region on a photosensitive object exposed by the first pattern; and the second pattern. Determining the minimum second exposure amount at which the transfer image of the light shielding portion disappears in each region on the photosensitive object exposed by, and obtaining information on the flare based on the first and second exposure amounts. The flare measuring device according to claim 10. 12. A photosensitive layer is formed on the surface of the photosensitive object with a positive photoresist, and the photosensitive object exposed by each of the first and second patterns is subjected to a developing process, and the measuring device is The flare measuring device according to claim 10 or 11, wherein the formation state of the first and second patterns is detected in each area on the photosensitive object that has undergone the development processing. 13. A method of irradiating a mask with illumination light through an illumination optical system, and exposing a subject to be exposed with the illumination light through a projection optical system, according to any one of claims 1 to 9. By obtaining information about flare generated in an optical system through which the illumination light passes by a measuring method, and adjusting the illuminance distribution or exposure amount distribution of the illumination light on the exposed object based on the information about the flare. Exposure method. 14. A method of irradiating a mask with illumination light through an illumination optical system, and exposing a to-be-exposed object with the illumination light through a projection optical system, according to claim 1. An exposure method, wherein information about flare generated in an optical system through which the illumination light passes is obtained by a measuring method, and the exposure condition of the exposed object is adjusted based on the information about flare. 15. An exposure apparatus comprising: an illumination optical system for irradiating a mask with illumination light; and a projection optical system for projecting the illumination light onto an object to be exposed. An exposure apparatus comprising the flare measuring apparatus described in claim 1 and obtaining information on flare generated in an optical system through which the illumination light passes. 16. The exposure apparatus according to claim 15, further comprising an adjusting device that adjusts an illuminance distribution or an exposure amount distribution of the illumination light on the exposed object based on the flare information. . 17. An adjusting method for an exposure apparatus, comprising: an illumination optical system for irradiating a mask with illumination light; and a projection optical system for projecting the illumination light onto an object to be exposed. The information about flare generated in the optical system through which the illumination light passes is obtained by the measuring method according to the paragraph 1, and the illuminance distribution or the exposure amount distribution of the illumination light on the exposed object is obtained based on the information about the flare. And a method for adjusting an exposure apparatus. 18. The adjusting method for an exposure apparatus according to claim 17, wherein an optical system through which the illumination light passes is adjusted based on the illuminance distribution or the exposure amount distribution.