JP3223646B2 - Projection exposure apparatus and method for manufacturing semiconductor device using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus and a method of manufacturing a semiconductor device using the same, and more particularly, to a method of manufacturing a semiconductor device, a so-called stepper, which appropriately illuminates a pattern on a reticle surface. A high resolving power can be easily obtained.

[0002]

2. Description of the Related Art Recent advances in semiconductor device manufacturing technology have been remarkable, and the accompanying fine processing technology has also advanced remarkably.
In particular, the optical processing technology has reached a fine processing technology having a submicron resolution after the manufacture of 1MDRAM semiconductor devices. As a means for improving the resolving power, a method of increasing the NA (numerical aperture) of the optical system by fixing the exposure wavelength has been used in many cases.

However, recently, various attempts have been made to change the exposure wavelength from g-line to i-line and to improve the resolving power by an exposure method using an ultra-high pressure mercury lamp. In addition, various methods have been proposed for improving the resolving power by using light having a shorter wavelength, such as an excimer laser. It is known that the effect of using light of a short wavelength generally has an effect inversely proportional to the wavelength, and the depth of focus becomes deeper as the wavelength is shortened.

In addition, the present applicant changes the illumination method on the reticle plane, that is, variously changes the light intensity distribution (effective light source distribution) formed on the pupil plane of the projection optical system accordingly. An exposure method with a higher resolution and a projection exposure apparatus using the same are disclosed in, for example, Japanese Patent Application No. Hei.
No. 631 (filed on February 22, 1991).

[0005]

The actual process of manufacturing a semiconductor integrated circuit includes various processes in which high resolution performance of a pattern is required and processes in which high resolution performance of a pattern is not required. Also, the pattern formed on the reticle surface has various shapes such as a horizontal direction, a vertical direction, and an oblique direction.

Generally, an effective light source distribution (light intensity distribution) on a pupil plane of a projection optical system (projection lens) greatly affects the image performance (resolution) of a projected pattern image. For this reason, there is a demand for an illumination system that can illuminate the current exposure apparatus for manufacturing semiconductor elements in an optimal manner for each process. However, it is very difficult to accurately monitor the effective light source distribution on the pupil plane of the projection optical system and to confirm whether or not illumination is performed in a desired illumination mode.

An object of the present invention is to provide a projection optical system on a pupil plane.
Projection exposure apparatus and semiconductor that can easily measure the effective light source distribution
An object of the present invention is to provide a method for manufacturing a body element.

[0008]

According to the first aspect of the present invention, there is provided a projection exposure apparatus.
The light device illuminates the mask with light from the illumination system,
The projected mask pattern is projected onto the substrate by the projection optical system.
In a projection exposure apparatus that casts a shadow, the illumination system includes
The formed secondary light source forms an image on a pupil plane of the projection optical system.
Light emitted from the secondary light source.
It has a diaphragm with a variable opening diameter to restrict,
Light from the illumination system is detected by the photodetector while changing the aperture diameter.
Of the effective light source in the pupil plane by detecting the amount of
It is characterized by seeking cloth .

According to a second aspect of the present invention, there is provided a projection exposure apparatus comprising: an illumination system;
Illuminates the mask with light from the
A projection exposure apparatus that projects turns onto a substrate with a projection optical system
Wherein the illumination system comprises a secondary light formed therein.
The source is configured to form an image on a pupil plane of the projection optical system.
And an optical axis for limiting light emitted from the secondary light source.
It has a diaphragm whose aperture position in the plane orthogonal to it is variable,
While changing the aperture position of the aperture, the photodetector
By detecting the amount of light from the illumination system,
It is characterized in that an effective light source distribution is obtained.

According to a third aspect of the present invention, there is provided a projection exposure apparatus comprising: an illumination system;
Illuminates the mask with light from the
A projection exposure apparatus that projects turns onto a substrate with a projection optical system
Wherein the illumination system comprises a secondary light formed therein.
The source is configured to form an image on a pupil plane of the projection optical system.
And the projection optical system restricts light emitted from the secondary light source.
The aperture has a variable aperture diameter, and the aperture of the aperture is
Through the projection optical system by the photodetector while changing the diameter
The pupil by detecting the amount of light from the illumination system
It is characterized in that an effective light source distribution on a surface is obtained.

According to a fourth aspect of the present invention, there is provided a projection exposure apparatus comprising: an illumination system;
Illuminates the mask with light from the
A projection exposure apparatus that projects turns onto a substrate with a projection optical system
Wherein the illumination system comprises a secondary light formed therein.
The source is configured to form an image on a pupil plane of the projection optical system.
And the projection optical system restricts light emitted from the secondary light source.
A diaphragm with a variable aperture position in a plane perpendicular to the optical axis.
Light detection while changing the aperture position of the aperture
Light from the illumination system through the projection optical system
The effective light source distribution in the pupil plane by detecting the quantity
It is characterized by seeking .

A method for manufacturing a semiconductor device according to a fifth aspect of the present invention.
Is a projection exposure according to any one of claims 1 to 4.
Exposure of wafer with reticle circuit pattern by equipment
And a step of developing the exposed wafer .

[0013]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

In the figure, reference numeral 2 denotes an elliptical mirror. Reference numeral 1 denotes an arc tube as a light source, which has a high-luminance light emitting section 1a that emits ultraviolet rays, far ultraviolet rays, and the like. The light emitting unit 1a is arranged near the first focal point of the elliptical mirror 2. Reference numeral 3 denotes a cold mirror, which is formed of a multilayer film and transmits most infrared light and reflects most ultraviolet light. The elliptical mirror 2 forms a light emitting portion image (light source image) 1b of the light emitting portion 1a near the second focal point 4 via the cold mirror 3.

Reference numeral 5 denotes an optical system, which is composed of a condenser lens, a zoom lens, and the like. The light emitting unit image 1b formed in the vicinity of the second focal point 4 is incident on the entrance surface 6 of the optical integrator 6.
The image is formed on a. The optical integrator 6 includes a plurality of minute lenses (fly's eye lenses) 6-i (i = 1 to
N) are arranged two-dimensionally at a predetermined pitch, and a secondary light source is formed near the emission surface 6b.

Reference numeral 7 denotes a stop, which is a normal 6 stop or a stop shown in FIG.
The pupil plane 14 of the projection lens 13 as shown in FIGS.
It consists of a ring-shaped illumination stop, a quadrupole illumination stop, and the like that change the above light intensity distribution. An actuator 7p switches the aperture 7. 7a is an iris diaphragm,
It is composed of a plurality of aperture plates as shown in FIG.
The aperture 7 can be switched by the actuator 7p. Reference numeral 7ap denotes an actuator, which changes the aperture diameter of the iris diaphragm 7a.

In this embodiment, by using the iris diaphragm 7a, the light intensity distribution on the pupil plane 14 of the projection optical system 13, that is, the effective light source distribution is measured by changing the light flux incident on the condenser lens 8 in various ways. ing.

[0018] Incidentally, share the iris diaphragm 7a at this time a normal diaphragm retriever for effective light source distribution measurement may be the only configuration iris diaphragm 7a without switching. 2 (A),
When it is desired to measure the effective light source distribution including the effect of the stop such as the deformed illumination as shown in FIG. 2B, the iris stop may be placed immediately after the stop of the deformed illumination or the like to measure the effective light source distribution.

Reference numeral 8 denotes a condenser lens. A plurality of light beams emitted from the secondary light source near the emission surface 6b of the optical integrator 6 are condensed by the condensing lens 8, reflected by the mirror 9 and directed to the masking blade 10, and uniformly illuminate the surface of the masking blade 10. are doing. The masking blade 10 is made up of a plurality of movable light shielding plates so that an arbitrary opening shape is formed.

Reference numeral 11 denotes an imaging lens, which transfers the shape of the opening of the masking blade 10 to the surface of the reticle 12 as a surface to be irradiated, and uniformly illuminates a required area on the surface of the reticle 12.

Reference numeral 13 denotes a projection optical system (projection lens).
The circuit pattern on the reticle 12 is reduced and projected on a wafer (substrate) 15 placed on a wafer chuck. 1
Reference numeral 4 denotes a pupil plane of the projection optical system 13. Reference numeral 16 denotes a detector, for example, an ultraviolet detector. The ultraviolet detector 16 is provided so that its light receiving surface is located on substantially the same plane as the wafer 15.

The ultraviolet detector 16 may be provided on the reticle 12 which is a conjugate plane with the wafer 15 in some cases.

In the optical system of this embodiment, the light emitting section 1a
And the second focal point 4 and the incident surface 6a of the optical integrator 6 have a substantially conjugate relationship. Further, the masking blade 10, the reticle 12, and the wafer 15 are in a conjugate relationship. Further, the stop 7 and the pupil plane 14 of the projection optical system 13 have a substantially conjugate relationship.

In this embodiment, the pattern on the surface of the reticle 12 is subjected to reduced projection exposure on the surface of the wafer 15 with the above configuration. The semiconductor device is manufactured through a predetermined development process.

Next, in this embodiment, the exit pupil 7 of the stop 7
b, that is, a method of measuring the effective light source distribution which is the illuminance distribution on the pupil plane 14 of the projection optical system 13 will be described.

When measuring the effective light source distribution, the iris diaphragm 7a is gradually opened from the closed (or most narrowed) state, and the illuminance for each state is measured by the ultraviolet detector 16. I do.

FIG. 3A shows the illuminance I on the wafer surface when the opening of the iris diaphragm 7a is gradually opened as a function of the radius r of the opening. In this case, as an example, the illuminance I is represented as a quadratic function of the radius r (I =
Cπr ² and C are constants. ). FIG. 3B schematically shows the diameter of the iris diaphragm 7a.

The radius of the aperture of the iris diaphragm 7a is represented by r, and the value of the illuminance measured by the ultraviolet ray detector 16 at that time is represented by I (r).
And At this time, the effective light source distribution is assumed to be a rotationally symmetric distribution with respect to the optical axis of the projection optical system 13 (for example, in the case of normal illumination or annular illumination). It is represented by a function f (r) of the intensity radius r.

If the illuminance I is measured by changing the radius of the aperture of the iris diaphragm 7a by Δr, the relative intensity f (r) of the effective light source is obtained by using the illuminance I (r) as f (r) = (I ( r + Δr) −I (r)) / (2πrΔr) (1)

When continuously changing the iris diaphragm 7a, Δ
r can be regarded as a very small amount, and f (r) = 1 / (2πr) dI / dr (2) As shown in the following expression (2), the relative intensity f (r) is the differential of the illuminance I. It is represented by a value.

FIG. 3C shows the relative intensity f (r) of the effective light source obtained by using (Equation 2). Thus, when the illuminance I is a quadratic function, the relative intensity f of the effective light source
(R) is a constant, that is, a uniform effective light source distribution. In order to actually obtain the effective light source distribution, the illuminance I (r)
The relative intensity f (r) may be obtained from the measurement result of (1) or (Expression 2) using (Expression 2).

In this embodiment, the ultraviolet detector 16 arranged near the wafer position is used to measure the illuminance I (r). However, the ultraviolet detector 16 may be located near the reticle 12 position. In FIG. 1, the light source is a high-pressure lamp such as a mercury lamp, but may be an ultraviolet light source such as an excimer laser. In this embodiment, when the effective light source distribution is rotationally asymmetric with respect to the optical axis, the effective light source distribution is averaged over the radius r of the aperture of the iris diaphragm.

In this embodiment, as described above, the effective light source distribution on the pupil plane 14 of the projection optical system 13 is obtained, so that the pattern on the reticle 12 is projected and exposed on the wafer 15. The mode is appropriately set to effectively improve the resolution of the projection pattern image.

Next, a second embodiment of the present invention will be described.

This embodiment is intended for a case where the effective light source distribution is rotationally asymmetric with respect to the optical axis. Since the configuration is substantially the same as that of the first embodiment shown in FIG. 1, the configuration will be described below with reference to FIG.

In this embodiment, the iris diaphragm 7a shown in FIG.
Is used instead of a small aperture stop 7b as shown in FIG. The small hole stop 7b is a stop having a small hole (small opening) 7c. 7bp and 7bpp are activators, respectively.
The small hole stop 7b is moved along the axes x and y in the drawing, that is, in a plane orthogonal to the optical axis.

By moving the small hole stop 7b in this manner, light emitted from all places of the optical integrator 6 can be scanned by the small hole 7c and the transmitted light flux can be changed. When the illuminance is measured by the ultraviolet detector 16 every time the small hole is moved, the effective light source corresponding to the position of the small hole 7c can be measured, and the effective light source distribution can be measured by scanning the small hole 7c. When it is desired to measure the effective light source distribution including the effect of the stop such as the deformed illumination, the small hole stop 7b may be placed immediately after the stop such as the deformed illumination and the effective light source may be measured.

Now, the coordinates of the center of the small hole 7c are (x, y), and the value of the illuminance measured by the ultraviolet detector 16 at this time is I
(X, y). Since the area of the stop is constant (the area of the small hole is constant) unlike the case of the first embodiment, the relative intensity f (x, y) of the effective light source is proportional to the illuminance I (x, y). Therefore, the distribution of the illuminance I (x, y) corresponds to the effective light source distribution. By reducing the area of the small hole 7c, the small hole 7c
If the scanning pitch of is reduced, the effective light source distribution can be measured more accurately.

In this embodiment, an ultraviolet detector near the wafer position is used to measure the illuminance. However, this ultraviolet detector may be near the reticle 12 position.

FIG. 5 is a schematic view of a main part of a third embodiment of the present invention.

In the first and second embodiments shown in FIGS. 1A and 1B, the apertures 7a and 7b for measuring the effective light source distribution are provided at positions in the illumination system substantially conjugate with the pupil plane 14 of the projection optical system 13. On the other hand, the present embodiment differs from the first and second embodiments in that the stop is provided near the pupil plane 14 of the projection optical system 13, and the other configuration is the same. In FIG. 5, the same elements as those shown in FIG. 1 are denoted by the same reference numerals.

When the iris diaphragm 17a is arranged near the position of the pupil plane 14, the ultraviolet detector 1 placed near the position of the wafer 15 every time the iris diaphragm 17a is moved as in the first embodiment.
By measuring the illuminance in step 6, the equation (1) or (2)
, An effective light source distribution can be obtained.

Also, a small aperture stop 17b is located near the position of the pupil plane 14.
When the small hole stop 7b is moved as in the second embodiment, the ultraviolet detector 16 placed near the position of the wafer is disposed.
The effective light source distribution can be obtained by measuring the illuminance in the above. When the small-hole stop 17b is arranged near the pupil plane 14, the small-hole stop is switched by the actuator 17p at the time of actual exposure, and an aperture used for actual exposure is provided.

FIG. 6 is a schematic view of a main part of a fourth embodiment of the present invention.

In this embodiment, a half mirror 9a having a high reflectance and a low transmittance is used instead of the total reflection mirror 9 as compared with the first embodiment of FIG. 1, and the diaphragm 7 (ie, the projection optical system) is passed through the half mirror 9a. A detector 100 such as a CCD is provided at a position conjugate with the pupil plane 14) of the projection optical system 13 to obtain an effective light source distribution on the pupil plane 14 of the projection optical system 13. An ultraviolet detector 16 is provided on the reticle or wafer surface. The difference is that they are not used,
Other configurations are substantially the same.

In FIG. 6, reference numeral 101 denotes a pinhole, which can be moved by an actuator 102 in a plane orthogonal to the optical axis. In this embodiment, a light source image on the stop 7 is formed on the detector 100 surface by the principle of a pinhole camera. Then, the pinhole 101 is moved in a plane orthogonal to the optical axis, and the effective light source distribution on the pupil plane 14 of the projection optical system 13 is obtained from this. In addition, the detector 100 is moved similarly to the pinhole 101 as needed.

FIG. 7 is a schematic view showing a main part of a part of the fifth embodiment of the present invention.

In the present embodiment, a lens section 9b is disposed behind the half mirror 9a as compared with the fourth embodiment in FIG. 6, and the light flux passing through the half mirror 9a is guided on the detector 100 surface. The detector 100 and the stop 7 are set to have a substantially conjugate relationship. Then, the illuminance distribution on the surface of the diaphragm 7 is measured by the detector 100 to obtain an effective light source distribution. In the present embodiment, the superposition of the effective light sources at all image heights is measured by disposing the lens unit 9b.

FIGS. 8, 9 and 10 are schematic views of a part of the sixth, seventh and eighth embodiments of the present invention.

In the sixth embodiment shown in FIG. 8, compared with the fourth embodiment shown in FIG. 6, a half mirror 9d having a low reflectance and a high transmittance is used, and the reflected light from the half mirror 9d is pinhole 101d.
, And the other configuration is the same.

In the seventh embodiment shown in FIG. 9, a half mirror 9d having a low reflectance and a high transmittance is arranged between the stop 7 (not shown) and the condenser lens 8 as compared with the fourth embodiment shown in FIG. The difference is that the reflected light from the half mirror 9d is detected by the detector 100 via the pinhole 101, and the other configuration is the same.

In the eighth embodiment shown in FIG. 10, a half mirror 9d having a low reflectance and a high transmittance is arranged between the imaging lens 11 and the reticle 12 as compared with the fourth embodiment shown in FIG. Is detected by the detector 100 via the pinhole 101, and the other configuration is the same.

In the fourth to eighth embodiments, the detector 100
Can measure the effective light source distribution at a time if it is a two-dimensional detector such as a CCD. Alternatively, the effective light source distribution may be measured by scanning a detector having a small measurement area.

The effective light source distribution in the detector 100 is actually a collection of images of individual fly-eye lenses as shown in FIG. FIG. 11A shows a case where the fly-eye lens is made of a small lens of 5 × 5 (total 25), and as shown in FIG. It can be seen that there is illuminance only in the area.

Therefore, detectors in which a number of detectors equal to the number of individual fly-eye lenses are arranged in a matrix (FIG. 11)
It can be seen that even when (B)) is used, the effective light source distribution can be measured. Also, only the main part may be measured without aligning the detectors by the number of fly-eye lenses. For example, FIG.
In 1 (B), the detectors 1, 5, 21, 25, 13
Only four detectors (or 3, 11, 15, 23, 13) and five detectors at the center may be used.

By operating the actuator 102, the pinhole 101 can be moved to measure not only the on-axis but also the off-axis effective light source distribution. If the image of the effective light source protrudes from the light receiving area of the detector due to the movement of the pinhole at this time, the detector 100 may be moved in accordance with the movement of the pinhole.

FIG. 12 is an example of the effective light source distribution measured by the method of this embodiment. In the case of this figure, FIG.
Effective light source distribution corresponding to the quadrupole illumination. Thus, the effective light source distribution can be measured two-dimensionally.

In any of the above embodiments, the light amount (exposure amount) reaching the wafer can be monitored by this method, and the method can be used as an exposure meter.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described projection exposure apparatus will be described.

FIG. 13 shows a flow of manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD). In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 (mask production)
Then, a mask on which the designed circuit pattern is formed is manufactured.

In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer prepared in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 14 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. Step 14 (ion implantation) implants ions into the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer.

In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device which has conventionally been difficult to manufacture.

By setting each element as described above, the effective light source distribution on the pupil plane of the projection optical system can be measured with high precision, and the optimum distribution can be optimized for the line width and directionality of the projection pattern. Thus, it is possible to achieve a projection exposure apparatus capable of obtaining various illumination modes, easily exposing and transferring various patterns on a reticle surface onto a wafer surface with a high resolution, and a method of manufacturing a semiconductor device using the same.

In particular, the effective light source distribution on the pupil plane of the projection optical system, which greatly affects the image performance of the projection pattern image, can be accurately monitored. In particular, in an illumination system having a plurality of illumination modes having a zoom lens function, a prism exchange function, an aperture exchange function, and the like, it is possible to monitor whether each illumination mode has a desired effective light source distribution. example
For example, according to the reticle line width, the optimal effective light source distribution is
Although different, the present invention accurately monitors the effective light source distribution.
To find the best lighting mode for that line width.
And a projection exposure apparatus having features such as
It is possible to achieve a method of manufacturing a semiconductor device using
You.

[0068]

As described above, according to the present invention, the pupil of the projection optical system
Projection exposure equipment that can easily measure the effective light source distribution on the surface
And a method for manufacturing a semiconductor element.

[Brief description of the drawings]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

FIG. 2 is an explanatory diagram of an aperture in FIG. 1;

FIG. 3 is an explanatory diagram showing the relationship between the diameter of the aperture stop in FIG. 1 and illuminance.

FIG. 4 is an explanatory view of a diaphragm according to a second embodiment of the present invention.

FIG. 5 is a schematic view of a main part of a third embodiment of the present invention.

FIG. 6 is a schematic diagram of a main part of a fourth embodiment of the present invention.

FIG. 7 is a schematic view of a main part of a part of a fifth embodiment of the present invention.

FIG. 8 is a schematic diagram of a main part of a part of a sixth embodiment of the present invention.

FIG. 9 is a schematic view of a main part of a part of a seventh embodiment of the present invention.

FIG. 10 is a schematic view of a main part of a part of an eighth embodiment of the present invention.

FIG. 11 is an explanatory diagram showing a relationship between a detector according to the present invention and an effective light source distribution.

FIG. 12 is an explanatory diagram of an effective light source distribution measured in the present invention.

FIG. 13 is a flowchart of a method for manufacturing a semiconductor device of the present invention.

FIG. 14 is a flowchart of a method for manufacturing a semiconductor device of the present invention.

[Explanation of symbols]

Reference Signs List 1 light source 2 elliptical mirror 3 cold mirror 5 optical system 6 optical integrator 7 stop 7a iris stop 8 focusing lens 9 mirror 9a half mirror 10 masking blade 11 imaging lens 12 reticle 13 projection optical system 14 pupil plane 15 wafer 16, 100 detection Container 101 Pinhole

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-65623 (JP, A) JP-A-3-211811 (JP, A) JP-A-62-123423 (JP, A) JP-A-4- 267515 (JP, A) JP-A-5-36586 (JP, A) JP-A-4-77743 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/027 G02B 27 / 00 G03B 27/32 G03F 7/20 521

Claims (5)

(57) [Claims] 1. A mask is illuminated with light from an illumination system,
The pattern of the illuminated mask is projected onto the substrate by the projection optical system.
In the projection exposure apparatus, the illumination system includes:
A secondary light source formed therein forms an image on a pupil plane of the projection optical system.
And emit light from the secondary light source.
A diaphragm having a variable aperture for restricting light;
While changing the opening diameter of the light
By detecting the amount of light, the effective light in the pupil plane
A projection exposure apparatus for determining a light source distribution . 2. A mask is illuminated with light from an illumination system.
The pattern of the illuminated mask is projected onto the substrate by the projection optical system.
In the projection exposure apparatus, the illumination system includes:
A secondary light source formed therein forms an image on a pupil plane of the projection optical system.
And emit light from the secondary light source.
Variable aperture position in plane perpendicular to optical axis to restrict light
The diaphragm has a simple aperture, and the aperture position of the diaphragm is changed.
Detecting the amount of light from the illumination system with a photodetector.
Calculating the effective light source distribution in the pupil plane by
Characteristic projection exposure apparatus. Projection exposure equipment. 3. A mask is illuminated with light from an illumination system.
The pattern of the illuminated mask is projected onto the substrate by the projection optical system.
In the projection exposure apparatus, the illumination system includes:
A secondary light source formed therein forms an image on a pupil plane of the projection optical system.
Wherein the projection optical system includes the secondary light source.
Has a diaphragm with a variable aperture diameter that restricts light emitted from the
And a photodetector while changing the aperture diameter of the diaphragm.
Detecting the amount of light from the illumination system via the projection optical system
And thereby obtaining an effective light source distribution on the pupil plane . 4. A mask is illuminated by light from an illumination system.
The pattern of the illuminated mask is projected onto the substrate by the projection optical system.
In the projection exposure apparatus, the illumination system includes:
A secondary light source formed therein forms an image on a pupil plane of the projection optical system.
Wherein the projection optical system includes the secondary light source.
Limit the light emitted from the
The aperture position has a variable aperture, and the aperture position of the aperture
Through the projection optical system by the photodetector while changing
Pupil plane by detecting the amount of light from the illumination system
A projection exposure apparatus , wherein an effective light source distribution is obtained . 5. A according to any one of claims 1 to 4
Wafer with reticle circuit pattern by projection exposure equipment
Exposing and developing the exposed wafer.
A method for manufacturing a semiconductor device, comprising: