JP2010118403A - Scanning aligner and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that when exposure is carried out in a stage-inclined state during adjustment of an integral exposure amount on an irradiated surface wherein the scanning-directional length of an irradiation area in a slit shape is changed by positions in a direction (slit direction) perpendicular to the scanning direction in a scanning aligner having a conventional variable slit device for adjusting the integral exposure amount on the irradiated surface, effect of stage inclination is different with the slit-directional positions, and then differences in exposure beam width are generated by the slit-directioinal positions. <P>SOLUTION: The scanning aligner includes a lighting optical system which lights up an original R using light from a light source, and a projection optical system PO which projects a pattern, formed on the original R, on a substrate W, and has a variable slit device 12 which generates illumination light in a rectangular shape to have a dimmed or light-shielded area at a scanning-directional center position of the illumination light in the rectangular shape, so that the scanning-directional width of the dimmed or light-shielded area can be adjusted for each of the slit-directional positions. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an exposure apparatus for microlithography in the manufacture of microdevices such as semiconductor elements, imaging elements, liquid crystal display elements, and thin film magnetic heads, and a device manufacturing method using the same.

  In a photolithography process for manufacturing a microdevice such as a semiconductor element, an exposure apparatus that transfers an image of a pattern formed on a mask or a reticle onto a substrate such as silicon coated with a photosensitive agent is generally used. In this exposure apparatus, as the pattern to be transferred is miniaturized, a slight change in exposure conditions increases the defect rate and causes a decrease in yield. For this reason, in an illuminating device that irradiates the reticle with illumination light, due to unevenness of illuminance in the illumination area, defects that cause the line width of the pattern formed on the substrate to be uneven are reduced. It is prevented by making it uniform.

  In a scanning exposure apparatus that relatively scans a reticle and a photosensitive substrate with respect to slit-shaped illumination light and transfers a pattern on the reticle, as disclosed in, for example, Japanese Patent Laid-Open No. 10-340854, A method has been proposed in which the scanning direction width of slit-shaped illumination light is changed for each position in the slit direction (direction orthogonal to the scanning direction) by a variable slit device to make the integrated exposure amount uniform.

  By the way, the resolution R of the exposure apparatus is generally expressed by the following expression called the Rayleigh expression.

ここでｋ１はプロセス係数、λは露光装置の光源波長、ＮＡは投影光学系の開口数である。Ｒａｙｌｅｉｇｈの式から、解像度Ｒを小さくして微細な回路パターンを描画するためには、プロセス係数ｋ１か波長λを小さくするか、投影光学系のＮＡを大きくすればよいことが分かる。このため、半導体デバイスの微細化に伴い、露光装置の光源は短波長化が進み、投影光学系のＮＡは拡大してきている。

Here, k1 is a process coefficient, λ is a light source wavelength of the exposure apparatus, and NA is a numerical aperture of the projection optical system. From the Rayleigh equation, it can be seen that in order to reduce the resolution R and draw a fine circuit pattern, the process coefficient k1 or the wavelength λ may be decreased or the NA of the projection optical system may be increased. For this reason, with the miniaturization of semiconductor devices, the light source of the exposure apparatus has been shortened, and the NA of the projection optical system has been expanded.

  In an actual lithography process, a certain depth of focus DOF is required due to the influence of the curvature of the photosensitive substrate, the level difference of the photosensitive substrate due to the process, and the thickness of the photosensitive member itself. The depth of focus is generally expressed by the following equation.

ここでｋ２はプロセス係数である。この式から明らかなように、焦点深度は光源の短波長化、投影光学系のＮＡの増加とともに小さくなる。微細なパターンのデバイス製造においては焦点深度の値が小さくなるため、歩留まりの低下を招く。

Here, k2 is a process coefficient. As is clear from this equation, the depth of focus becomes smaller as the wavelength of the light source becomes shorter and the NA of the projection optical system increases. In the manufacture of a device with a fine pattern, the depth of focus value is small, which leads to a decrease in yield.

As a method for enlarging the depth of focus without changing the wavelength or the NA of the projection optical system, there is a method of exposing by tilting the scanning direction of the stage with respect to the optical axis as disclosed in Non-Patent Document 1. According to this method, since the substrate is exposed on a number of focal planes during scanning exposure, the depth of focus is expanded. A schematic diagram of scanning exposure in which the scanning direction of the stage is inclined with respect to the optical axis is shown in FIG. R is an original plate on which a predetermined pattern is formed, and the pattern on the original plate R is projected onto the substrate W via the projection optical system PO by relatively scanning the original plate R and the exposed substrate W coated with the photosensitive agent. Exposure. BF is the best focus surface of the projection optical system PO. AI is an optical image of a pattern on the substrate R formed by the projection optical system PO, and forms an image spreading from the best focus position. In FIG. 2, the direction perpendicular to the paper surface is the slit direction. When scanning exposure is performed with the stage tilted with respect to the optical axis, it can be seen that one point on the substrate W is exposed with a number of optical images AI on the focal plane. At this time, the width of the focal plane on which the substrate W is exposed (focus range FR) is proportional to the tilt amount of the stage and the scanning direction width of the illumination light. FIG. 2 shows a method of tilting the substrate stage, but the same effect can be obtained by scanning exposure with the original plate tilted.
Japanese Patent Laid-Open No. 10-340854 Proc. of SPIE Vol. 6154 61541K-1

  FIG. 3 shows a variable slit device according to the prior art. In FIG. 3, the X axis indicates the slit direction, and the Y axis indicates the scanning direction. The X-axis and Y-axis in the subsequent figures show the same direction. In the variable slit device according to the prior art, the integrated exposure amount in the scanning exposure is adjusted by selectively shortening the slit width at the position in the slit direction where the illuminance is high in the slit-shaped illumination area EL. Exposure amount correction by this method becomes a problem when scanning exposure is performed with the stage tilted for the purpose of enlarging the DOF.

  In the exposure amount correction according to the conventional technique, the length in the scanning direction of the illumination light for illuminating the irradiated surface is changed for each position in the slit direction. At this time, if exposure is performed with the scanning direction of the stage tilted with respect to the optical axis for the purpose of increasing the depth of focus, the focus range FR and its center position differ for each slit direction position. As an example, a comparison is made between the slit direction positions x1 and x2 in FIG. At position x1, scanning exposure is started from the state of FIG. 4A, and scanning exposure is completed in the state of FIG. 4C through FIG. 4B. On the other hand, at the position x2, the scanning direction position at which scanning exposure is started is the same as x1, but since the scanning direction length of the illumination region is shorter than that at the position x2, scanning exposure is started from the state of FIG. The scanning exposure is completed in the state shown in FIG. Therefore, there is a difference between the focus range and the center position between the position x1 and the position x2, and as a result, there is a difference in the exposure line width between the position x1 and the position x2.

  As described above, in the scanning exposure apparatus using the variable slit apparatus according to the prior art, when the variable slit is driven to adjust the integrated exposure amount when performing exposure by tilting the stage, the focus range and its center There is a problem that a line width difference due to a difference in position occurs.

  Therefore, an object of the present invention is to adjust the integrated exposure amount without causing a line width difference due to a shift between the focus range and its center position when performing exposure by tilting a stage in a scanning exposure apparatus.

  In the present invention, in order to solve the above-described problem, a dimming or shading region is provided at the intermediate position in the scanning direction of the rectangular illumination region, and the scanning direction length of the dimming or shading region is set for each position in the slit direction. It is possible to provide a scanning exposure apparatus characterized by being adjustable.

  According to the present invention, it is possible to adjust the integrated exposure amount in the illumination area while maintaining the focus range for each position in the slit direction and the center position thereof even when exposure is performed while tilting the stage. As a result, the line width of the pattern formed on the substrate can be made uniform, and the occurrence of line width defects can be reduced.

  Next, details of the present invention will be described in accordance with the description of the embodiments.

  Hereinafter, a first embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a schematic view showing an example of a scanning exposure apparatus to which the first embodiment of the present invention is applied.

  A light source 1 is, for example, an ArF excimer laser having a wavelength of about 193 nm or a KrF excimer laser having a wavelength of about 248 nm. The present invention is not limited to the type, wavelength, or number of light sources.

  A drawing optical system 2 guides a light beam from the light source 1 to the diffractive optical element 3.

  The diffractive optical element 3 is mounted on a turret having a plurality of slots, and an arbitrary element can be moved on the optical axis by an actuator 4.

  The light emitted from the diffractive optical element 3 is collected by the condenser lens 5 to form a diffraction pattern on the diffraction pattern surface 6. If the diffractive optical element located on the optical axis is exchanged by the actuator 4, a plurality of diffraction patterns such as an annular shape and a multipolar shape can be formed.

  The diffraction pattern formed on the diffraction pattern surface 6 is adjusted in size and shape by the prism 7 and the zoom lens 8 and then enters the mirror 9.

  The prism 7 can be zoomed, and when the distance between the prism 7a and the prism 7b is sufficiently small, the prism 7a and the prism 7b can be regarded as an integrated parallel glass plate. At this time, the diffraction pattern formed on the diffraction pattern surface 6 is enlarged or reduced to the zoom lens 8 while maintaining a substantially similar shape, and is imaged on the incident surface of the light intensity distribution forming means 10. By separating the positions of the prism 7a and the prism 7b, the shape of the diffraction pattern formed on the diffraction pattern surface 6 such as the width of the annular zone is adjusted.

  The light beam reflected by the mirror 9 enters the integrator 10. As the integrator 10, a fly-eye lens, a microlens array, or the like is used.

  The light beam emitted from the integrator 10 is condensed by the condenser lens 11 to illuminate the plane on which the masking blade 13 for defining the exposure area is located with a desired light intensity distribution. The masking blade 14 is arranged to define the exposure range of the reticle R held on the reticle stage RS, and together with the substrate (wafer) W coated with a photosensitive agent such as a photoresist held on the reticle R and the wafer stage WS. Scanned synchronously.

  A slit device 12 for forming rectangular illumination light is disposed on the irradiated surface or its conjugate surface or in the vicinity thereof. The variable slit device 12 is provided with a light shielding member 12b that shields light in the vicinity of the center of the illumination area in the scanning direction. The light shielding member 12b changes the light shielding width in the scanning direction, thereby reducing the light shielding area formed in the illumination area. The length in the scanning direction can be changed. The shading member 12b can correct unevenness of the integrated exposure amount for each image height. The variable slit device 12 may be disposed on the irradiated surface or its conjugate surface or in the vicinity thereof, and may be disposed on the downstream side of the masking blade 14.

  Reference numerals 11, 15, and 17 denote relay optical systems that project the light intensity distribution on the masking blade 14 onto the reticle R. The pattern formed on the reticle R is projected and exposed on the substrate W by the projection optical system PO.

  Reticle stage RS and wafer stage WS have a structure in which the scanning direction can be tilted with respect to the optical axis. Increasing the depth of focus can be achieved by tilting one of the two stages and performing scanning exposure.

  FIG. 5 shows an example of the variable slit device 12 according to the present invention. The Z axis in FIG. 5 indicates the optical axis direction, FIG. 5A is a diagram of the variable slit device 12 viewed from the optical axis direction, and FIG. 5B is a diagram viewed from the slit direction. The light shielding member 12b of the present invention is formed of a thin plate having a different width for each position in the scanning direction, and is disposed so as to shield the vicinity of the center in the scanning direction of the rectangular illumination area EL formed by the variable slit device 12. Yes. Further, the light shielding member 12b is configured to be rotatable with a rotation axis parallel to the slit direction, and by rotating with the rotation axis parallel to the slit direction, the light shielding width in the scanning area in the illumination area is set for each position in the slit direction. Can be changed. By changing the slit light shielding width in the illumination region, the light shielding amount in the region where the intensity of the illumination light is high is increased, and the integrated exposure amount is adjusted. At this time, it is desirable that the light shielding area formed in the illumination area by the light shielding member 12b is substantially symmetric with respect to the scanning direction center of the rectangular illumination area.

  If the light shielding member 12b having the shape shown in FIG. 5 is used, the secondary illuminance unevenness in which the integrated exposure amount has a shape as shown in FIG. 6, for example, can be eliminated. The rotation angle of the light shielding member 12b is determined by the size of the generated illuminance unevenness. In addition, when the light shielding member 12b has the shape shown in FIG. 7, the primary illuminance unevenness having the shape as shown in FIG. 8 can be eliminated. When the light shielding member 12b has the shape shown in FIG. 9, the fourth-order illuminance unevenness having the shape as shown in FIG. 10 can be eliminated.

  A plurality of light shielding members having different shapes may be used for more uneven illumination unevenness. For example, by using a combination of the light shielding members shown in FIG. 5 and FIG. 7, uneven illuminance having a shape as shown in FIG. 11 can be eliminated. At this time, by allowing each light shielding member to be driven in a direction parallel to or perpendicular to the optical axis, uneven illuminance of various shapes can be eliminated.

  Further, the variable slit device 12 according to the present invention need not be limited to a single location. For example, the variable slit device 12 is arranged before and after the conjugate surface of the irradiated surface, or the optical system is configured so that two conjugate surfaces of the irradiated surface are formed, and the variable slit device 12 is arranged on each conjugate surface. May be.

  If the scanning exposure apparatus provided with the variable slit device 12 according to the present invention is used, even if the integrated exposure amount of the illumination area is adjusted to be uniform, the scanning direction position where scanning exposure starts and the scanning direction where scanning exposure ends. The position is not changed for each position in the slit direction. Therefore, when the stage RS or the stage WS is tilted for exposure in order to increase the depth of focus, the integrated exposure amount can be adjusted while keeping the focus range and the center position constant for each position in the slit direction. As a result, the uniformity of the line width of the pattern formed on the substrate can be improved.

  Here, it is obvious that the exact shape of the light shielding member 12b is not important for the present invention. However, in order to reduce the light shielding amount at the maximum opening position, it is desirable that the light shielding member 12b be made as thin as possible.

  Next, a specific operation of the variable slit device 12 when correcting uneven exposure due to uneven illuminance will be described. The illuminance distribution of the illumination light is measured by an illuminance meter (not shown) arranged in the optical path of the illumination light. Based on the measured illuminance distribution, the light shielding member 12b is driven so that the integrated exposure amount of the illumination area is uniform.

  The variable slit device 12 according to the present invention is not limited to correcting exposure unevenness due to uneven illumination. For example, when the film thickness of the photoresist applied to the substrate is uneven, the resist thickness is measured by a resist thickness measuring device (not shown) outside the exposure apparatus, and the light shielding member 12b is driven based on the measurement result. It is also possible to make it. That is, it is possible to uniformly expose the photoresist by increasing the exposure amount in a region where the resist film is thick and decreasing the exposure amount in a region where the film thickness is thin.

  Further, the line width information of the substrate that has already been exposed may be measured by a line width measuring device (not shown) outside the exposure apparatus, and the light shielding member 12b may be driven based on the measurement result. That is, based on the measurement result of the line width information, the integrated exposure amount of the illumination light can be corrected when exposing a new substrate, and the line width of the pattern formed on the substrate can be made uniform. Thus, the exposure unevenness may be directly measured, and the integrated exposure amount of the illumination light may be adjusted based on the measurement result.

  In the second embodiment of the present invention, the light shielding member 12b constituting the variable slit device 12 is constituted by a plurality of blades arranged in the slit direction, except for the following description, the first embodiment of the present invention. It is basically the same as the example.

  FIG. 12 is a view showing a light shielding member 12b according to a second embodiment of the present invention. The light shielding member 12b constituting the variable slit device 12 is composed of a plurality of blades 21 to 24 having a common rotating shaft 20 parallel to the slit direction. The blades 21 to 24 can be continuously rotated by the rotation shaft 20 parallel to the slit direction, and can be rotated independently, and the light shielding width in the scanning direction in the illumination region can be independently changed. Can do. Further, the blades 21 to 24 are arranged so that shadows in the illumination areas of adjacent blades overlap each other, and are arranged so that the integrated exposure amount can be adjusted without a gap with respect to the slit direction of the illumination areas. .

  The blades 21 to 24 can be partially changed in the scanning direction light-shielding width in the illumination area by rotating independently with a rotation axis parallel to the slit direction. By partially changing the light blocking width in the scanning direction in the illumination area, the integrated exposure amount is adjusted so that uneven exposure is eliminated.

  Here, four blades are drawn in FIG. 12, but it is of course desirable that the number of blades is as large as possible in order to eliminate uneven exposure more satisfactorily. It should also be understood that the rotation angle and size of the blade in FIG. 12 are exaggerated. For example, if the scanning direction width of the slit-shaped exposure region is 10 mm, the change in the light shielding width of the blade in the scanning direction may be 1 mm at maximum in order to change the integrated exposure amount by 10%. Therefore, it is only necessary that the rotation angle of the blade is small or the length of the blade itself is 1 mm.

  The example in which the blade having the rotation axis parallel to the slit direction is used as the plurality of blades has been described above. However, the plurality of blades may be blades that expand and contract in the scanning direction as shown in FIG.

  The plurality of blades that expand and contract in the scanning direction are formed of, for example, piezoelectric elements each having an electrode connected thereto. A piezoelectric element is an element that expands and contracts according to an applied voltage, and can be driven with very high accuracy.

  The plurality of blades that expand and contract in the scanning direction may be formed by, for example, a thermal expansion element. A thermoelectric element for adjusting the temperature of the blade and a thermometer for measuring the temperature of the blade are connected to the blade. A thermoelectric element is an element that can be heated and cooled by an applied voltage. The blade formed by the thermal expansion element changes in temperature when irradiated with illumination light, and there is a concern that the light shielding width in the scanning direction of the blade changes accordingly. In order to prevent this, it is desirable to sequentially measure the temperature of the blade with a thermometer connected to the blade, and adjust the temperature with a thermoelectric element so that the light shielding width in the scanning direction of the blade is kept constant.

  In the second embodiment of the present invention, since the light shielding amount can be controlled independently for each position in the slit direction, even exposure unevenness having a complicated shape can be solved satisfactorily. As a result, the line width of the pattern formed on the wafer can be made uniform.

  The third embodiment of the present invention is basically the same as the first embodiment of the present invention except for the content described below, in which a tape processed into an arbitrary shape is used for the light shielding member 12b of the variable slit device 12. It is.

  FIG. 14 shows a variable slit device 12 according to a third embodiment of the present invention. The variable slit device includes a tape 30 that forms the light shielding member 12b, a processing device 31 that processes the tape 30 into an arbitrary shape, and a tape transfer unit 32 that transfers and recovers the tape 30 in the optical path.

  The tape 30 is, for example, a thin metallic tape. The tape 30 is desirably as thin as possible and has a thickness of, for example, 10 μm. This is for making the position of the optical axis direction that shields the slit-shaped illumination light equal as much as possible so that the shape of the illumination light is accurately deformed into an arbitrary shape, and further for facilitating tape processing. .

  The cutter 33 is composed of a disk-shaped blade having a rotation axis in the scanning direction, and the cutter driving unit 34 moves the cutter 33 in the scanning direction while rotating the cutter 33 in the slit direction. One side of the tape 30 is processed into an arbitrary shape by the cutter 33, and the scanning direction width of the tape 30 is changed to a desired width.

  Further, the tape transfer unit 32 sends out the processed tape 30 in the optical path, and this is used as the light shielding member 12b to adjust the integrated exposure amount of the illumination area. The shape of the tape 30 is determined so as to eliminate exposure unevenness based on measurement results of uneven illumination, resist film thickness, and exposure unevenness.

  The case where a disk-shaped cutter is used as the tape processing portion has been described above, but the shape of the cutter is not limited to the disk shape, and may be an arbitrary shape such as a plate shape. Further, the tape processing part is not limited to a disk-shaped blade, but may be any one that can arbitrarily process the shape of the tape such as a laser processing machine. Moreover, two tape processing parts may be sufficient and you may make it process both the sides of the tape 30 simultaneously.

  In the third embodiment of the present invention, since an arbitrarily shaped tape is used as the light shielding member 12b, uneven exposure can be satisfactorily eliminated with a relatively simple configuration. As a result, the line width of the pattern formed on the wafer can be made uniform.

  In addition, this invention is not limited to each Example mentioned above, Of course, a different structure can be taken in the range which does not deviate from the summary of this invention.

1 schematically shows a scanning exposure apparatus according to a first embodiment of the present invention. FIG. The figure showing a mode that a board | substrate is exposed in many focal planes by inclining and scanning exposure of a board | substrate stage. The figure which shows the conventional variable slit apparatus. The figure showing a mode that a focus range changes for every position in a slit direction when a substrate stage is tilted and scanning exposure is performed using a conventional variable slit device. The figure which shows an example of the variable slit apparatus concerning the 1st Example of this invention. The figure showing the shape of the illumination intensity nonuniformity which can be eliminated with the variable slit apparatus of FIG. The figure which shows an example of the variable slit apparatus concerning the 1st Example of this invention. The figure showing the shape of the illumination intensity nonuniformity which can be eliminated with the variable slit apparatus of FIG. The figure which shows an example of the variable slit apparatus concerning the 1st Example of this invention. The figure showing the shape of the illumination intensity nonuniformity which can be eliminated with the variable slit apparatus of FIG. The figure showing the shape of the illumination intensity nonuniformity which can be eliminated by using combining the light-shielding member of FIG. 5 and FIG. The figure which shows the some braid | blade which has a common rotating shaft parallel to the slit direction which comprises the variable slit apparatus concerning 2nd Example of this invention. The figure which shows the some braid | blade which expands-contracts in the scanning direction which comprises the variable slit apparatus concerning the 2nd Example of this invention. The figure which shows the variable slit apparatus concerning the 3rd Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light source 2 Routing optical system 3 Diffractive optical element 4 Actuator 5 Condenser lens 6 Diffraction pattern surface 7 Prism 8 Zoom lens 9 Bending mirror 10 Integrator 11 Condenser lens 12 Variable slit device 12b Light-shielding member 14 Masking blade 15 Condenser lens 16 Bending mirror 17 Collimator Lens 20 Rotating shaft 21-24 Blade 30 Tape 31 Processing device 32 Tape transfer part 33 Cutter R Reticle RS Reticle stage PO Projection optical system W Wafer WS Wafer stage AI Optical image BF Best focus position FR Focus range VS Variable slit device

Claims (13)

  An illumination optical system that illuminates an original plate on which a predetermined pattern is formed using light from a light source, an illumination area forming device that is arranged in the illumination optical system to form a rectangular illumination area, and formed on the original plate A projection optical system for projecting the formed pattern onto a substrate coated with a photosensitive agent, and performing projection exposure of the pattern formed on the original plate by relatively scanning the original plate and the substrate. In the type exposure apparatus, a light-reducing or light-shielding region is provided at an intermediate position in the scanning direction of the rectangular illumination region, and the length of the light-reducing or light-shielding region in the scanning direction can be adjusted for each position orthogonal to the scanning direction. A scanning exposure apparatus characterized by the above.   2. The scanning exposure apparatus according to claim 1, wherein the dimming or light shielding area is substantially symmetric with respect to a scanning direction center of the rectangular illumination area.   The scanning exposure apparatus according to claim 1, wherein the light reduction or light shielding region is formed by a light shielding member capable of changing a light shielding width in a scanning direction.   4. The scanning exposure apparatus according to claim 3, wherein the light shielding member is rotatable about a rotation axis perpendicular to the scanning direction.   The scanning exposure apparatus according to claim 3, wherein the light shielding member includes a plurality of blades whose width in the scanning direction can be adjusted.   A tape that forms the light shielding member, and at least one tape processing unit that processes the tape and changes the light shielding width in the scanning direction of the tape at each position orthogonal to the scanning direction. The scanning exposure apparatus according to claim 3.   The scanning according to claim 6, further comprising at least one of a tape feeding unit that sends the tape into the optical path of the illumination light and a tape collection unit that collects the tape from the optical path of the illumination light. Mold exposure equipment.   8. The scanning exposure apparatus according to claim 1, wherein the light shielding member can be driven in at least one of a scanning direction, an optical axis direction, and a direction perpendicular thereto. .   9. The scanning exposure apparatus according to claim 1, wherein an integrated exposure amount is adjusted based on information related to illuminance unevenness of the illumination optical system. 10.   The scanning exposure apparatus according to claim 9, further comprising a measurement unit that measures information related to illuminance unevenness of the illumination optical system.   An input unit that inputs at least one of the line width information of the pattern formed on the substrate and the thickness information of the photosensitive agent applied to the substrate, and integrates based on the input information The scanning exposure apparatus according to claim 1, wherein an exposure amount is adjusted.   A stage for holding / scanning the original plate and a stage for holding / scanning the substrate are provided, and at least one of the stages can be scanned while being inclined with respect to the optical axis. The scanning exposure apparatus according to any one of claims 1 to 11.   The pattern formed on the original plate is projected onto the substrate coated with the photosensitive agent using the scanning exposure apparatus according to claim 1, and then the substrate is developed. A device manufacturing method comprising manufacturing a device.

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