JPH10106942A - Scanning type exposing device and manufacture of semiconductor device using the device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly illuminate the surface of an object, and an exposure center light flux is made incident vertical to the surface to be illuminated by a method in which the illumination distribution of the aperture part of a masking blade is measured, a part of an illumination system optical element is driven by an optical axis adjusting system based on an illumination signal, and the illumination distribution of the aperture part is adjusted. SOLUTION: The photosensor of an illumination measuring system 201 measures the degree of illumination by scanning on the whole area of illumination of the aperture region of a masking blade 6 when an illumination measuring operation is conducted. The condition of incidence of a beam of light to an optical integrator 4 is detected from the illumination distribution at the aperture part of a masking blade 6 measured by the illumination measuring system 201. By adjusting at least an optical element, which constitutes an illumination system, by operating an optical axis adjusting/control system 105 in the direction orthogonally intersecting with the optical axis based on the detected condition of incidence, the incident light to an optical integrator 4 becomes symmetrical to the optical axis or becomes the state approximate to symmetry.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning exposure apparatus and a method of manufacturing a device using the same, for example, a semiconductor device such as an IC or LSI, an imaging device such as a CCD, a display device such as a liquid crystal panel, a magnetic head, and the like. In a process of manufacturing a device, a pattern on a first object surface such as a reticle is projected onto a second object surface such as a wafer by a projection optical system in a scanning exposure apparatus used in a lithography process. This is suitable for a case where projection exposure is performed while scanning an object in synchronization.

[0002]

2. Description of the Related Art As a fine processing technology for semiconductor devices such as ICs and LSIs, a reduced projection method in which a circuit pattern image of a mask (reticle) is formed on a photosensitive substrate by a projection optical system, and the photosensitive substrate is exposed by a step & repeat method. Various exposure apparatuses (steppers) have been proposed.

In this stepper, a circuit pattern on a reticle is reduced and projected onto a predetermined position on a wafer surface via a projection optical system having a predetermined reduction magnification, and is transferred. Then, the step of moving the stage on which the wafer is mounted by a predetermined amount and performing the transfer again is repeated to expose the entire surface of the wafer. Among these projection exposure apparatuses, recently, various step-and-scan exposure apparatuses using a scanning mechanism capable of obtaining a high resolution and enlarging a screen size have been proposed.

[0004] This step & scan type exposure apparatus has a slit-like exposure area, and exposure of a shot is performed by scanning a reticle and a wafer. When the scanning exposure of one shot is completed, the wafer steps to the next shot, and the exposure of the next shot is started. This is repeated to expose the entire wafer.

FIG. 16 is a schematic view of a main part of a conventional scanning type exposure apparatus.

In FIG. 16, a light beam from a light source 1 is shaped into a desired beam shape by a beam shaping optical system 2, a passing light amount is adjusted by a variable ND filter 3, and light is incident on an optical integrator 4 such as a fly eye lens. Face 4
a. The fly's eye lens is composed of a group of a plurality of minute lenses, and a plurality of secondary light sources are formed near the light exit surface 4b. Reference numeral 5 denotes a condenser lens. The condenser lens 5 illuminates a masking blade 6 with Koehler illumination by a light beam from the secondary light source surface of the optical integrator 4.

The masking blade 6 and the reticle 9 are arranged at positions slightly apart from a conjugate relationship by the imaging lens 7 and the mirror 8, and the periphery of the opening of the masking blade 6 is blurred, so that the scanning on the reticle 9 is performed. The shape and dimensions are defined so that the illuminance distribution of the illumination area in the direction becomes trapezoidal.

The illumination area of the reticle 9 has a rectangular slit shape whose transverse direction is set in the scanning direction of the reticle 9. Reference numeral 10 denotes a projection optical system, which projects a circuit pattern drawn on the reticle 9 onto a semiconductor substrate (wafer) 11 in a reduced size. Reference numeral 101 denotes a movement control system, and the reticle 9
And the semiconductor substrate 11 are accurately moved at a constant speed at the same ratio as the magnification of the projection optical system 10 by a driving device (not shown). A light amount control system 102 adjusts the amount of light transmitted through the variable ND filter 3 according to the target integrated exposure amount. 10
Reference numeral 3 denotes a laser control system which controls the amount of light emitted from the light source 1 and the oscillation frequency.

[0009]

The illuminance on the surface of the wafer 11 in the scanning type exposure apparatus shown in FIG. 16 is obtained by scanning the slit illumination area 14 arranged on the same surface as the wafer 11 as shown in FIG. For the direction, the illuminance measurement sensor 12 longer than the illumination area width is moved in the scanning direction and the vertical direction,
The integrated value of the illuminance in the scanning direction and the relationship between the scanning direction and the vertical direction are measured.

If this relationship is not uniform as shown in FIG. 18, the interval between the masking blade 6 in the scanning direction and the vertical direction is adjusted so that the integrated value of the illuminance in the scanning direction becomes uniform in the scanning direction and the vertical direction. It is done by doing.

FIG. 19 shows the state of adjustment at that time. When the illuminance measurement result when the opening shape of the masking blade 6 is rectangular is non-uniform as shown in FIG. 18, the opening shape of the masking blade 6 is adjusted by an exposure amount control system, and the masking is performed as shown in FIG. By making the opening shape of the blade 6 a trapezoidal shape 16, the illuminance in the scanning direction and the vertical direction is adjusted to be uniform.

Here, since the masking blade 6 has a configuration of four as shown in FIG. 19, for example, when the integrated value of the illuminance in the scanning direction is as shown in FIG. 20, the masking blade 6 is changed as shown in FIG. To adjust the illuminance. This prevents exposure amount unevenness on the wafer 11 during scanning exposure.

Here, the state of light rays incident on the masking blade surface 6 will be described with reference to FIG. The illuminance distribution on the masking blade surface 6 is based on the optical integrator 4
Are respectively superimposed on the same surface as the masking blade 6 by the condenser lens 5 by the respective illuminance distributions incident on each optical element that forms Also 206
Is a wafer conjugate plane, which is distant in the optical axis direction from the position of the masking blade 6, so that the light intensity distribution in the illumination area on the wafer conjugate plane 206 is trapezoidal, which is uniform at the center and changes gradually at the periphery. It will be close.

In FIG. 4, a, b and c denote light beams incident on the respective optical elements of the optical integrator 4. D, e, f, g, j, k, and l are luminous fluxes a, b, c
The rays f, e, d are directed to the position i on the masking blade surface, the rays g, f, e are directed to the position h on the masking blade surface, and the rays j, k, l are directed to the masking blade. Pointed at the center of the plane.

When the illuminance distribution of the light incident on the optical integrator 4 deviates from the symmetry with respect to the optical axis as shown in FIG. 9, the illuminance distribution on the masking blade surface is not uniform as shown in FIG. Non-uniformity.

In this case, the center of gravity of the light beam (light intensity center of gravity) is perpendicular to the masking blade surface around the masking blade surface. Then, as it goes to the other peripheral portion of the masking blade surface, it gradually shifts from the perpendicular to the masking blade surface. This state is shown in FIG. At the position h on the masking blade surface, the rays g,
The light intensity centroids of the rays f and e are perpendicular to the masking blade surface because the light intensities of the rays g and f are equal.
Becomes smaller in the order of f, e, and d, so that the light intensity gravity center of the light beam is inclined toward the light beam f.

Also in this case, as described above, in the exposure on the wafer 11, the illuminance in the scanning direction on the masking blade surface is integrated from the periphery on the masking blade surface to the center and the periphery. In this case, the center of gravity of the light beam for each pulse on the substrate to be exposed is, as shown in FIG.
When pattern 1 is developed, the pattern 302 formed on the resist on the wafer 11 is inclined with respect to the perpendicular to the wafer 11 as shown in FIG.

According to the illuminance adjustment described above, it is possible to make the illuminance uniform in the scanning direction on the wafer, but it is possible to adjust the center of gravity of the light intensity of the light beam irradiated on the wafer. Can not. For this reason, when the illuminance distribution of the light incident on the optical integrator 4 deviates from the direction perpendicular to the optical axis, the pattern formed on the resist 17 on the wafer 11 has the illuminance in the scanning direction of the light beam irradiated on the wafer. Is uniform, the pattern formed on the wafer may be tilted from the vertical direction of the wafer, which may degrade image performance.

It is desirable that the pattern formed on the wafer in the exposure apparatus is perpendicular to the wafer. If the pattern formed on the wafer is not perpendicular to the wafer, the performance of the semiconductor chip using that pattern is improved. Decreases.

According to the present invention, when the pattern on the first object surface illuminated with the light beam from the light source is scanned and exposed on the second object surface, the first object surface or the exposed surface (illuminated surface) is uniformly illuminated. At the same time, the pattern formed on the wafer is formed perpendicularly to the wafer surface by making the center light beam (center-of-gravity light beam) of the exposure light perpendicularly enter the irradiated surface, thereby forming a high-resolution pattern. An object of the present invention is to provide a scanning exposure apparatus capable of easily obtaining an image and a method for manufacturing a device using the same.

[0021]

According to the present invention, there is provided a scanning exposure apparatus comprising: (1-1) a light beam from a light source, which is illuminated via a lighting system having a masking blade for limiting an illuminated area of an illuminated surface; Illuminating a pattern on a first object plane disposed on a surface, and projecting the first object and the second object on a second object plane by a scanning means using the projection optical system on the pattern on the first object plane; In a scanning type exposure apparatus that performs projection exposure while scanning in synchronization with a speed ratio corresponding to the imaging magnification of the first object, the masking blade is disposed at a position shifted from a conjugate position of the first object, and The illuminance distribution at the opening of the masking blade is measured by an illuminance measurement system provided in the vicinity of the opening or a plane conjugate with the opening, and the illumination system is configured by an optical axis adjustment system based on an illuminance signal from the illuminance measurement system. Optics It is characterized in that a part of the elements is driven to adjust the illuminance distribution of the opening.

In particular, (1-1-1) the illumination system comprises a beam shaping optical system for shaping a light beam from the light source into a predetermined size and emitting the beam, and a plurality of secondary beams based on the light beam from the beam shaping optical system. An optical integrator forming a light source, and a condenser lens for condensing light beams from a plurality of secondary light sources of the optical integrator and superimposing the light beams on the masking blade surface, (1-1-
2) The optical axis adjusting system drives at least one of the beam shaping optical system, the optical integrator, and the condenser lens in the optical axis direction and / or in a direction orthogonal to the optical axis. (1-1-3) The illuminance measurement system is connected to the second
It is characterized in that it is provided near the object plane.

The method for manufacturing a device according to the present invention is characterized in that a wafer which has been exposed by projection using the scanning exposure apparatus of the constitutional requirement (1-1) is manufactured through a development process.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic diagram showing a configuration of a scanning exposure apparatus according to a first embodiment of the present invention.

In the present embodiment, a reticle (first object) 9 is irradiated with a light beam emitted from a light source 1 of a pulse laser via an illumination system (illuminating means), and a circuit pattern formed on the reticle is projected onto a projection lens ( A projection type optical system) 10 shows a scanning type exposure apparatus which performs reduction projection while printing both on a substrate (second object) 11 coated with a photoreceptor by a projection optical system 10 as shown by arrows, and prints semiconductor devices such as ICs and LSIs. CCD
It is suitable for manufacturing devices such as an imaging device and a magnetic head.

In FIG. 1, reference numeral 1 denotes a light source (light source means) which is constituted by a pulse laser such as an excimer laser and emits pulse light. Reference numeral 2 denotes a beam shaping optical system which shapes a light beam from the light source 1 into a predetermined shape and causes the light beam to enter a light incident surface 4a of an optical integrator 4 via an ND filter 3 for adjusting a light amount. The ND filter 3 is a light source 1
And the beam shaping optical system 2.

The optical integrator 4 is composed of a fly eye lens or the like composed of a plurality of minute lenses.
A plurality of secondary light sources are formed near the light exit surface 4b. Reference numeral 5 denotes a condenser lens which illuminates a movable slit (masking blade) 6 with a light beam from a secondary light source near the light exit surface 4b of the optical integrator 4. The luminous flux illuminating the masking blade 6 illuminates the surface of the reticle 9 through the imaging lens 7 and the mirror 8 in a slit-shaped illumination area having a short opening in the scanning direction.

The masking blade 6 is provided with, for example, a voice coil motor (not shown) so that the masking blade 6 can be moved in the direction of the optical axis La and in the direction perpendicular to the optical axis La. The shape and size (size) of the illumination area on the reticle 9 surface are variously changed by changing the opening shape. The masking blade 6 is disposed at a position slightly shifted from the position conjugate with the reticle 9 via the imaging lens 7 and the mirror 8 in the direction of the optical axis La. By adjusting the shape of the opening of the masking blade 6 and the arrangement in the direction of the optical axis La, the illuminance distribution of the illumination area on the reticle 9 in the scanning direction is trapezoidal. 20
Reference numeral 1 denotes an illuminance measurement system that measures an illuminance distribution at an opening on the masking blade 6 surface.

The reticle (first object) 9 has a circuit pattern thereon and is held on a reticle stage 9a. Reference numeral 10 denotes a projection lens (projection optical system), which reduces and projects the circuit pattern of the reticle 9 onto a semiconductor substrate (second object) 11. The semiconductor substrate 11 is a so-called wafer, the surface of which is coated with a resist serving as a photoreceptor, and is mounted on a wafer stage 11a that is three-dimensionally displaced. Reference numeral 101 denotes a stage drive control system (scanning means) which controls the reticle stage 9a and the wafer stage 11a to move in the opposite directions at a constant speed exactly at the same ratio as the imaging magnification by the projection lens 10. I have.

As described above, in this embodiment, the light that has passed through the masking blade 6 reflects the opening shape of the masking blade 6 on the surface 9 to be exposed and illuminates in a rectangular shape. While moving the reticle 9 and the wafer 11 in the short side direction of the rectangle, the exposure is sequentially performed according to the pulse oscillation of the light source 1. At this time, the speed of the wafer 11 is m times the moving speed of the reticle 9 (the magnification of the projection lens 10 is m).

Reference numeral 102 denotes a light amount control system for adjusting the amount of light transmitted from the ND filter 3 according to the target integrated exposure amount. A laser control system 103 outputs a trigger signal, a charging voltage signal, and the like according to a desired exposure amount, and
The pulse energy and the light emission interval (oscillation frequency) are controlled.

Reference numeral 13 denotes an optical axis adjusting system, which is at least one of a light source 1 or a beam shaping optical system 2 constituting an illumination system, a variable ND filter, an optical integrator 4, a condenser lens 5, and the like in a direction orthogonal to the optical axis La. Drive control. Reference numeral 105 denotes an optical axis adjustment control system, which is based on the illuminance measurement result from the illuminance measurement system 201.
3 is driven so that the light intensity distribution of the light beam incident on the optical integrator 4 or the illuminance distribution at the opening of the masking blade 6 is symmetric with respect to the optical axis.

FIG. 2 is an enlarged explanatory view of the vicinity of the masking blade 6 and the illuminance measuring system 201 of FIG. 1, FIG. 3 is a schematic front view of FIG. 2, and FIG. 4 is an enlarged explanatory view of the vicinity of the optical integrator 4 of FIG.

In the figure, reference numeral 202 denotes a photosensor for measuring the illuminance, which is arranged on the same plane as the masking blade 6. Reference numeral 203 denotes a stage for moving the photo sensor 202 in the scanning direction indicated by the arrow, and reference numeral 204 denotes the photo sensor 2.
02 and a stage for moving the stage 203 in a direction perpendicular to the scanning direction. Reference numeral 205 denotes a stage which moves the photo sensor 202, the stage 203, and the stage 204, and moves so that the photo sensor 202 is on the same plane as the masking blade 6 during illuminance measurement. The stage 205 moves the photosensor 202, the stage 203, the stage 204, and the stage 205 themselves to a position where they do not block the light beam except when measuring the illuminance unevenness.

At the time of measuring the illuminance, the photosensor 202 measures the illuminance while scanning over the entire irradiation area of the opening area of the masking blade 6 with the stage 203 and the stage 204 as shown in FIG. Thus, the illuminance on the entire surface of the masking blade surface 6 is measured. In FIG. 3, light rays are incident perpendicularly to the plane of the drawing. Each of the elements 202 to 205 described above is an illuminance measurement system 201.
Constitutes one element.

Next, the state of the light beam on the masking blade surface 6 will be described with reference to FIG. The illuminance distribution on the surface of the masking blade 6 is obtained by superimposing the illuminance distribution based on the light beam emitted from each optical element forming the optical integrator 4 on the same surface as the masking blade 6 by the condenser lens 5.

In FIG. 4, reference numeral 206 denotes a conjugate plane of the wafer 11, which is slightly away from the position of the masking blade 6 in the optical axis direction. For this reason, the light intensity distribution (illuminance distribution) of the illumination area on the wafer conjugate plane 206 is close to a trapezoid that is uniform at the center and changes gradually at the periphery. A, b, and c in FIG. 4 indicate light beams incident on the respective optical elements of the optical integrator 4. D, e,
f, g, j, k, and l indicate the positions of the light beams of the light beams a, b, and c, and the light beams f, e, and d indicate the position i of the masking blade surface 6.
And the rays g, f and e are directed to the masking blade surface 6
, And the light beams j, k, l are directed to the center of the masking blade surface.

When the illuminance distribution of the light incident on the optical integrator 4 is symmetric with respect to the optical axis as shown in FIG. 5, the illuminance distribution on the masking blade surface 6 becomes uniform as shown in FIG. . In this case, the center of gravity of the light beam (beam center of gravity) is perpendicular to the masking blade surface at the center of the masking blade surface 6. In addition, the periphery of the masking blade slightly deviates from the perpendicular to the masking blade surface. This state is shown in FIG.

In the case of a scanning type exposure apparatus, a substrate (wafer)
The exposure on the surface 11 is performed while the slit-type exposure region formed by the masking blade 6 moves on the wafer 11, and the exposure amount is integrated on the wafer 11. In the exposure on the wafer 11, the illuminance in the scanning direction on the masking blade surface 6 is integrated from the periphery on the masking blade surface 6 to the center and the periphery. In this case, the center of gravity of the light beam at the time of scanning on the substrate to be exposed is symmetrical with respect to the perpendicular to the wafer 11 as shown in FIG.
Pattern 301 formed on the resist on wafer 1
It becomes a rectangle symmetrical with respect to the perpendicular to 1.

On the other hand, when the illuminance distribution of the light incident on the optical integrator 4 deviates from the symmetry with respect to the optical axis as shown in FIG. 9, the illuminance distribution on the masking blade 6 surface is uniform as shown in FIG. And it becomes non-uniform.
In this case, the center of gravity of the light beam is perpendicular to the masking blade surface 6 around the masking blade surface 6. Then, as it goes to the other peripheral portion of the masking blade surface 6, the masking blade surface 6 slightly shifts from perpendicular to the masking blade surface 6. This state is shown in FIG.

At the position h of the masking blade surface 6, the light intensity centroid of the light beams g, f and e is perpendicular to the masking blade surface 6 because the light intensity of the light beams g and f is equal. At position i on the surface 6, the intensity of the light beams f, e, and d decreases in the order of f, e, and d, so that the light intensity centroid of the light beam is inclined toward the light beam f. Also in this case, as described above, in the exposure on the wafer 11, the illuminance in the scanning direction on the masking blade surface 6 is integrated from the periphery on the masking blade surface to the center and the periphery. In this case, the center of gravity of the light beam for each pulse on the substrate 11 to be exposed is on one side from the perpendicular to the wafer 11 as shown in the figure, and the pattern 302 formed on the resist on the wafer 11 when the wafer 11 is developed is FIG.
As shown in FIG.

From the illuminance distribution at the opening of the masking blade surface 6 measured by the illuminance measuring system 201 as described above, the state of incidence of light rays on the optical integrator 4 is detected. That is, when the illuminance distribution at the opening of the masking blade surface 6 is asymmetric with respect to the optical axis, the intensity distribution of the light beam incident on the optical integrator 4 is asymmetric with respect to the optical axis, and You can see the direction of the deviation. For this reason, based on the detected incident state, the optical axis adjustment control system 105 operates the optical axis adjustment system 13 to adjust at least one optical element constituting the illumination system in a direction orthogonal to or orthogonal to the optical axis. Thus, the light incident on the optical integrator 4 is symmetric or almost symmetric with respect to the optical axis.

In this way, the illuminance on the masking blade surface 6 is measured, and based on the measurement results, some of the optical elements of the illumination system, such that the illuminance distribution on the masking blade surface 6 is symmetrical with respect to the optical axis. For example, by adjusting the direction of light incident on the optical integrator 4, illumination light with good image performance can be obtained in which a good pattern can be formed on the wafer 11 by exposure with little unevenness in illuminance.

FIG. 13 is a schematic view of a main part of a second embodiment of the present invention.

In the present embodiment, the illuminance measuring system 201 is arranged in the vicinity of the masking blade 6 as compared with the first embodiment of FIG.
The only difference is that it is arranged in the vicinity of the wafer 11 conjugate to the above, and the other configuration is the same. By arranging the illuminance measurement system 201 near the wafer 11, the same operation and effect as in the first embodiment can be obtained.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described scanning exposure apparatus will be described.

FIG. 14 shows a flow of manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD).

In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design.

On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 15 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of the present embodiment, it is possible to easily manufacture a highly integrated semiconductor device which has been conventionally difficult to manufacture.

[0056]

As described above, according to the present invention, when the pattern on the first object surface illuminated by the light beam from the light source is scanned and exposed on the second object surface, the pattern on the first object surface or the exposure surface ( The pattern to be formed on the wafer is formed perpendicularly to the wafer surface such that the center light beam (center-of-gravity light beam) of the exposure light is perpendicularly incident on the irradiation surface while illuminating the irradiated surface uniformly. As a result, it is possible to achieve a scanning exposure apparatus and a device manufacturing method using the same, which can easily obtain a high-resolution pattern image.

[Brief description of the drawings]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

FIG. 2 is a schematic diagram of the illuminance measurement system of FIG.

FIG. 3 is a diagram showing movement of the photosensor of FIG. 2;

FIG. 4 is a diagram showing a state of light rays on the masking blade surface of FIG. 1;

FIG. 5 is a diagram showing a light intensity distribution on an incident surface of an optical integrator.

FIG. 6 is a diagram showing a light intensity distribution on a masking blade surface.

FIG. 7 is a diagram showing light rays on a masking blade surface.

FIG. 8 is a diagram showing a light beam and a formed pattern on a wafer surface.

FIG. 9 is a diagram showing a light intensity distribution on an incident surface of an optical integrator.

FIG. 10 is a diagram showing a light intensity distribution on a masking blade surface.

FIG. 11 is a diagram showing light rays on a masking blade surface.

FIG. 12 is a diagram showing light rays and patterns formed on a wafer surface.

FIG. 13 is a schematic view of a main part of a second embodiment of the present invention.

FIG. 14 is a flowchart of a device manufacturing method of the present invention.

FIG. 15 is a flowchart of a device manufacturing method of the present invention.

FIG. 16 is a schematic view of a main part of a conventional scanning exposure apparatus.

FIG. 17 is a diagram showing illuminance measurement on a wafer surface;

FIG. 18 shows an example of illuminance measurement.

FIG. 19 is a diagram showing adjustment of illuminance.

FIG. 20 shows an example of illuminance measurement.

FIG. 21 is a diagram showing adjustment of illuminance.

[Explanation of symbols]

 Reference Signs List 1 pulse light source 2 beam shaping optical system 3 variable ND filter 4 optical integrator 5 condenser lens 6 masking blade 7 imaging lens 8 mirror 9 reticle 10 projection lens 11 semiconductor substrate 12 intensity distribution measuring sensor 13 optical axis adjusting device 14 slit illumination area 15 Masking blade 16 Masking blade 17 Resist 101 Stage drive control system 102 Light amount control system 103 Laser control system 104 Exposure amount control system 105 Optical axis adjustment control system 201 Illuminance measurement device 202 Photosensor 203 Stage 204 Stage 205 Stage 206 Wafer conjugate plane 301 Substrate Pattern formed on substrate 302 Pattern formed on substrate

Claims (5)

[Claims] 1. An illumination system having a masking blade for limiting a light flux from a light source to an illumination area of a surface to be illuminated,
The pattern on the first object plane arranged on the irradiated surface is illuminated, and the pattern on the first object plane is projected onto the second
In a scanning type exposure apparatus for projecting and exposing while scanning a first object and a second object synchronously at a speed ratio corresponding to a photographing magnification of the projection optical system by scanning means on an object surface, the masking blade is The illuminance distribution at the opening of the masking blade is measured by an illuminance measuring system provided near the opening of the masking blade or a plane conjugate with the opening, the illuminance being measured. A scanning exposure apparatus, wherein an optical axis adjustment system drives a part of the optical elements constituting the illumination system based on an illumination signal from a measurement system to adjust the illumination distribution of the opening. . 2. An illumination system comprising: a beam shaping optical system for shaping a light beam from the light source into a predetermined size and emitting the light beam; and an optical integrator for forming a plurality of secondary light sources from the light beam from the beam shaping optical system. And a condenser lens for condensing light beams from a plurality of secondary light sources of the optical integrator and superimposing the light beams on the masking blade surface.
Scanning exposure apparatus. 3. The optical axis adjusting system according to claim 1, wherein at least one of the beam shaping optical system, the optical integrator, and the condenser lens is driven in an optical axis direction and / or a direction orthogonal to the optical axis. Item 2. A scanning exposure apparatus according to Item 2. 4. The scanning exposure apparatus according to claim 2, wherein said illuminance measuring system is provided near said second object plane. 5. A device manufacturing method, wherein a device is manufactured using the scanning exposure apparatus according to claim 1. Description: