JP5730521B2 - 熱処理装置 - Google Patents

熱処理装置 Download PDF

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Publication number
JP5730521B2
JP5730521B2 JP2010200845A JP2010200845A JP5730521B2 JP 5730521 B2 JP5730521 B2 JP 5730521B2 JP 2010200845 A JP2010200845 A JP 2010200845A JP 2010200845 A JP2010200845 A JP 2010200845A JP 5730521 B2 JP5730521 B2 JP 5730521B2
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electrode
heat treatment
reflecting mirror
heated
treatment apparatus
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JP2012059872A5 (enExample
JP2012059872A (ja
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横川　賢悦
賢悦 横川
賢稔 三宅
賢稔 三宅
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2010200845A priority Critical patent/JP5730521B2/ja
Priority to US12/955,020 priority patent/US9271341B2/en
Priority to KR1020110010288A priority patent/KR101224529B1/ko
Publication of JP2012059872A publication Critical patent/JP2012059872A/ja
Publication of JP2012059872A5 publication Critical patent/JP2012059872A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/18—Heating by arc discharge

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
JP2010200845A 2010-09-08 2010-09-08 熱処理装置 Active JP5730521B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010200845A JP5730521B2 (ja) 2010-09-08 2010-09-08 熱処理装置
US12/955,020 US9271341B2 (en) 2010-09-08 2010-11-29 Heat treatment apparatus that performs defect repair annealing
KR1020110010288A KR101224529B1 (ko) 2010-09-08 2011-02-01 열처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010200845A JP5730521B2 (ja) 2010-09-08 2010-09-08 熱処理装置

Publications (3)

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JP2012059872A JP2012059872A (ja) 2012-03-22
JP2012059872A5 JP2012059872A5 (enExample) 2014-01-23
JP5730521B2 true JP5730521B2 (ja) 2015-06-10

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JP2010200845A Active JP5730521B2 (ja) 2010-09-08 2010-09-08 熱処理装置

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US (1) US9271341B2 (enExample)
JP (1) JP5730521B2 (enExample)
KR (1) KR101224529B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106595A (ja) * 2013-11-29 2015-06-08 株式会社日立ハイテクノロジーズ 熱処理装置
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JP7622920B2 (ja) * 2018-09-21 2025-01-28 国立大学法人東京農工大学 加熱装置および発熱体の加熱方法
US20240295048A1 (en) * 2023-03-03 2024-09-05 Applied Materials, Inc. Highly reflective metallic alloys for components of semiconductor processing equipment, and related methods

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