JP5705723B2 - 操作において開モードと閉モードとの切り替えを簡単に行う加工チェンバ設計を用いてマイクロ電子加工品を加工するための道具および方法 - Google Patents
操作において開モードと閉モードとの切り替えを簡単に行う加工チェンバ設計を用いてマイクロ電子加工品を加工するための道具および方法 Download PDFInfo
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- JP5705723B2 JP5705723B2 JP2011508490A JP2011508490A JP5705723B2 JP 5705723 B2 JP5705723 B2 JP 5705723B2 JP 2011508490 A JP2011508490 A JP 2011508490A JP 2011508490 A JP2011508490 A JP 2011508490A JP 5705723 B2 JP5705723 B2 JP 5705723B2
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- 238000012545 processing Methods 0.000 title claims description 162
- 238000000034 method Methods 0.000 title claims description 56
- 238000004377 microelectronic Methods 0.000 title claims description 23
- 238000013461 design Methods 0.000 title description 6
- 239000007789 gas Substances 0.000 claims description 118
- 239000012530 fluid Substances 0.000 claims description 102
- 239000003570 air Substances 0.000 claims description 85
- 239000012080 ambient air Substances 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 238000011144 upstream manufacturing Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 230000007613 environmental effect Effects 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 10
- 238000011282 treatment Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 description 84
- 238000009826 distribution Methods 0.000 description 75
- 238000004140 cleaning Methods 0.000 description 64
- 239000007788 liquid Substances 0.000 description 38
- 230000000694 effects Effects 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 239000000126 substance Substances 0.000 description 22
- 230000003321 amplification Effects 0.000 description 18
- 238000003199 nucleic acid amplification method Methods 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 239000007921 spray Substances 0.000 description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000008901 benefit Effects 0.000 description 10
- 238000011109 contamination Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000005660 hydrophilic surface Effects 0.000 description 7
- 238000009736 wetting Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 6
- 239000001569 carbon dioxide Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- -1 steam Substances 0.000 description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- KEQGZUUPPQEDPF-UHFFFAOYSA-N 1,3-dichloro-5,5-dimethylimidazolidine-2,4-dione Chemical compound CC1(C)N(Cl)C(=O)N(Cl)C1=O KEQGZUUPPQEDPF-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- XTHPWXDJESJLNJ-UHFFFAOYSA-N chlorosulfonic acid Substances OS(Cl)(=O)=O XTHPWXDJESJLNJ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 238000010237 hybrid technique Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0324—With control of flow by a condition or characteristic of a fluid
- Y10T137/0363—For producing proportionate flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2559—Self-controlled branched flow systems
- Y10T137/2574—Bypass or relief controlled by main line fluid condition
- Y10T137/2579—Flow rate responsive
- Y10T137/2599—Venturi
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12712908P | 2008-05-09 | 2008-05-09 | |
| US61/127,129 | 2008-05-09 | ||
| PCT/US2009/002768 WO2009137032A2 (en) | 2008-05-09 | 2009-05-05 | Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013076289A Division JP5705903B2 (ja) | 2008-05-09 | 2013-04-01 | 操作において開モードと閉モードとの切り替えを簡単に行う加工チェンバ設計を用いてマイクロ電子加工品を加工するための道具および方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011520283A JP2011520283A (ja) | 2011-07-14 |
| JP2011520283A5 JP2011520283A5 (enExample) | 2013-05-16 |
| JP5705723B2 true JP5705723B2 (ja) | 2015-04-22 |
Family
ID=40810072
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011508490A Expired - Fee Related JP5705723B2 (ja) | 2008-05-09 | 2009-05-05 | 操作において開モードと閉モードとの切り替えを簡単に行う加工チェンバ設計を用いてマイクロ電子加工品を加工するための道具および方法 |
| JP2013076289A Expired - Fee Related JP5705903B2 (ja) | 2008-05-09 | 2013-04-01 | 操作において開モードと閉モードとの切り替えを簡単に行う加工チェンバ設計を用いてマイクロ電子加工品を加工するための道具および方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013076289A Expired - Fee Related JP5705903B2 (ja) | 2008-05-09 | 2013-04-01 | 操作において開モードと閉モードとの切り替えを簡単に行う加工チェンバ設計を用いてマイクロ電子加工品を加工するための道具および方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8235062B2 (enExample) |
| JP (2) | JP5705723B2 (enExample) |
| KR (4) | KR20130083940A (enExample) |
| CN (2) | CN102683249B (enExample) |
| TW (2) | TWI556875B (enExample) |
| WO (1) | WO2009137032A2 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100993311B1 (ko) * | 2005-04-01 | 2010-11-09 | 에프에스아이 인터내쇼날 인크. | 하나 이상의 처리 유체로 마이크로일렉트로닉 작업물을 처리하는 장치용 이동 및 중첩 가능한 배플들을 포함하는 소형 덕트 시스템 |
| CN101484974B (zh) | 2006-07-07 | 2013-11-06 | Fsi国际公司 | 用于处理微电子工件的设备和方法以及遮挡结构 |
| WO2009020524A1 (en) | 2007-08-07 | 2009-02-12 | Fsi International, Inc. | Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses |
| CN102683249B (zh) | 2008-05-09 | 2015-06-17 | 泰尔Fsi公司 | 用于处理微电子工件的系统 |
| US8528886B2 (en) * | 2009-02-02 | 2013-09-10 | Corning Incorporated | Material sheet handling system and processing methods |
| US20110150700A1 (en) * | 2009-12-11 | 2011-06-23 | Laporta Thomas | Showerhead cleaning and disinfecting system and method |
| US20110147477A1 (en) * | 2009-12-18 | 2011-06-23 | Hoi Kwan Henry Mang | Fluid diversifying apparatus and method |
| JP6046608B2 (ja) | 2010-06-11 | 2016-12-21 | テル エフエスアイ インコーポレイテッド | 超小型電子ワークピースの加工に使用されるツールにおけるツール表面を洗浄する方法 |
| FI124113B (fi) * | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
| CN110189995A (zh) | 2010-12-10 | 2019-08-30 | 东京毅力科创Fsi公司 | 用于从衬底选择性地移除氮化物的方法 |
| US10307167B2 (en) | 2012-12-14 | 2019-06-04 | Corquest Medical, Inc. | Assembly and method for left atrial appendage occlusion |
| US10813630B2 (en) | 2011-08-09 | 2020-10-27 | Corquest Medical, Inc. | Closure system for atrial wall |
| US10314594B2 (en) | 2012-12-14 | 2019-06-11 | Corquest Medical, Inc. | Assembly and method for left atrial appendage occlusion |
| US9978565B2 (en) | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
| TWI576938B (zh) | 2012-08-17 | 2017-04-01 | 斯克林集團公司 | 基板處理裝置及基板處理方法 |
| US20140142689A1 (en) | 2012-11-21 | 2014-05-22 | Didier De Canniere | Device and method of treating heart valve malfunction |
| US8973524B2 (en) * | 2012-11-27 | 2015-03-10 | Intermolecular, Inc. | Combinatorial spin deposition |
| US8871108B2 (en) | 2013-01-22 | 2014-10-28 | Tel Fsi, Inc. | Process for removing carbon material from substrates |
| US9017568B2 (en) | 2013-01-22 | 2015-04-28 | Tel Fsi, Inc. | Process for increasing the hydrophilicity of silicon surfaces following HF treatment |
| US10262880B2 (en) | 2013-02-19 | 2019-04-16 | Tokyo Electron Limited | Cover plate for wind mark control in spin coating process |
| US9768041B2 (en) | 2013-08-12 | 2017-09-19 | Veeco Precision Surface Processing Llc | Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle |
| US10707099B2 (en) | 2013-08-12 | 2020-07-07 | Veeco Instruments Inc. | Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle |
| US9321087B2 (en) | 2013-09-10 | 2016-04-26 | TFL FSI, Inc. | Apparatus and method for scanning an object through a fluid spray |
| US9799530B2 (en) * | 2013-10-17 | 2017-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and etching apparatus thereof |
| CN104550182A (zh) * | 2013-10-22 | 2015-04-29 | 宁夏中远天晟科技有限公司 | 一种铁路车辆车体焊修的焊烟排除系统 |
| US9566443B2 (en) | 2013-11-26 | 2017-02-14 | Corquest Medical, Inc. | System for treating heart valve malfunction including mitral regurgitation |
| KR102006059B1 (ko) * | 2014-02-24 | 2019-07-31 | 도쿄엘렉트론가부시키가이샤 | 스핀 코팅 프로세스에서 결함 제어를 위한 덮개 플레이트 |
| US10842626B2 (en) | 2014-12-09 | 2020-11-24 | Didier De Canniere | Intracardiac device to correct mitral regurgitation |
| US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
| CN107224790B (zh) * | 2016-03-23 | 2019-05-21 | 盟立自动化股份有限公司 | 具有内置式气液分离单元的湿法工艺设备 |
| DE102017101730A1 (de) * | 2017-01-30 | 2018-08-02 | Fresenius Medical Care Deutschland Gmbh | Neue Berührschutzvorrichtung für medizinische fluidführende Kassette und Kassette |
| WO2018200398A1 (en) | 2017-04-25 | 2018-11-01 | Veeco Precision Surface Processing Llc | Semiconductor wafer processing chamber |
| DE102017208329A1 (de) * | 2017-05-17 | 2018-11-22 | Ejot Gmbh & Co. Kg | Berührungsfreie Reinigungsvorrichtung |
| US20190070639A1 (en) * | 2017-09-07 | 2019-03-07 | Applied Materials, Inc. | Automatic cleaning machine for cleaning process kits |
| KR102116534B1 (ko) * | 2018-06-25 | 2020-05-28 | 주식회사 에이치에스하이테크 | 기판 세정용 노즐 및 그 제조 방법 |
| KR102343637B1 (ko) | 2019-06-13 | 2021-12-28 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| CN112397411B (zh) * | 2019-08-13 | 2024-08-06 | 台湾积体电路制造股份有限公司 | 包含抽出装置的制程系统及其监测方法 |
| KR102816642B1 (ko) * | 2021-12-31 | 2025-06-04 | 세메스 주식회사 | 기판 지지 유닛 및 플라즈마 처리 장치 |
| JP2024060970A (ja) * | 2022-10-20 | 2024-05-07 | 東京エレクトロン株式会社 | カップ、液処理装置及び液処理方法 |
Family Cites Families (155)
| Publication number | Priority date | Publication date | Assignee | Title |
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2009
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102017065A (zh) | 2011-04-13 |
| TWI556875B (zh) | 2016-11-11 |
| KR101652270B1 (ko) | 2016-08-30 |
| JP2011520283A (ja) | 2011-07-14 |
| US20090280235A1 (en) | 2009-11-12 |
| US20120272893A1 (en) | 2012-11-01 |
| TWI511799B (zh) | 2015-12-11 |
| TW201000217A (en) | 2010-01-01 |
| TW201328788A (zh) | 2013-07-16 |
| US8684015B2 (en) | 2014-04-01 |
| KR20110005699A (ko) | 2011-01-18 |
| US20130213485A1 (en) | 2013-08-22 |
| KR101690047B1 (ko) | 2016-12-27 |
| KR20160015389A (ko) | 2016-02-12 |
| WO2009137032A3 (en) | 2010-01-28 |
| US8235062B2 (en) | 2012-08-07 |
| WO2009137032A2 (en) | 2009-11-12 |
| CN102683249A (zh) | 2012-09-19 |
| CN102683249B (zh) | 2015-06-17 |
| JP5705903B2 (ja) | 2015-04-22 |
| KR20160014774A (ko) | 2016-02-11 |
| CN102017065B (zh) | 2012-07-18 |
| US9039840B2 (en) | 2015-05-26 |
| JP2013153200A (ja) | 2013-08-08 |
| KR20130083940A (ko) | 2013-07-23 |
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