CN102683249B - 用于处理微电子工件的系统 - Google Patents
用于处理微电子工件的系统 Download PDFInfo
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- CN102683249B CN102683249B CN201210165024.3A CN201210165024A CN102683249B CN 102683249 B CN102683249 B CN 102683249B CN 201210165024 A CN201210165024 A CN 201210165024A CN 102683249 B CN102683249 B CN 102683249B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0324—With control of flow by a condition or characteristic of a fluid
- Y10T137/0363—For producing proportionate flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2559—Self-controlled branched flow systems
- Y10T137/2574—Bypass or relief controlled by main line fluid condition
- Y10T137/2579—Flow rate responsive
- Y10T137/2599—Venturi
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12712908P | 2008-05-09 | 2008-05-09 | |
| US61/127,129 | 2008-05-09 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801157869A Division CN102017065B (zh) | 2008-05-09 | 2009-05-05 | 使用在打开与关闭操作模式之间易于转换的处理室设计处理微电子工件的工具和方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102683249A CN102683249A (zh) | 2012-09-19 |
| CN102683249B true CN102683249B (zh) | 2015-06-17 |
Family
ID=40810072
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210165024.3A Active CN102683249B (zh) | 2008-05-09 | 2009-05-05 | 用于处理微电子工件的系统 |
| CN2009801157869A Active CN102017065B (zh) | 2008-05-09 | 2009-05-05 | 使用在打开与关闭操作模式之间易于转换的处理室设计处理微电子工件的工具和方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801157869A Active CN102017065B (zh) | 2008-05-09 | 2009-05-05 | 使用在打开与关闭操作模式之间易于转换的处理室设计处理微电子工件的工具和方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8235062B2 (enExample) |
| JP (2) | JP5705723B2 (enExample) |
| KR (4) | KR20130083940A (enExample) |
| CN (2) | CN102683249B (enExample) |
| TW (2) | TWI556875B (enExample) |
| WO (1) | WO2009137032A2 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100993311B1 (ko) * | 2005-04-01 | 2010-11-09 | 에프에스아이 인터내쇼날 인크. | 하나 이상의 처리 유체로 마이크로일렉트로닉 작업물을 처리하는 장치용 이동 및 중첩 가능한 배플들을 포함하는 소형 덕트 시스템 |
| CN101484974B (zh) | 2006-07-07 | 2013-11-06 | Fsi国际公司 | 用于处理微电子工件的设备和方法以及遮挡结构 |
| WO2009020524A1 (en) | 2007-08-07 | 2009-02-12 | Fsi International, Inc. | Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses |
| CN102683249B (zh) | 2008-05-09 | 2015-06-17 | 泰尔Fsi公司 | 用于处理微电子工件的系统 |
| US8528886B2 (en) * | 2009-02-02 | 2013-09-10 | Corning Incorporated | Material sheet handling system and processing methods |
| US20110150700A1 (en) * | 2009-12-11 | 2011-06-23 | Laporta Thomas | Showerhead cleaning and disinfecting system and method |
| US20110147477A1 (en) * | 2009-12-18 | 2011-06-23 | Hoi Kwan Henry Mang | Fluid diversifying apparatus and method |
| JP6046608B2 (ja) | 2010-06-11 | 2016-12-21 | テル エフエスアイ インコーポレイテッド | 超小型電子ワークピースの加工に使用されるツールにおけるツール表面を洗浄する方法 |
| FI124113B (fi) * | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
| CN110189995A (zh) | 2010-12-10 | 2019-08-30 | 东京毅力科创Fsi公司 | 用于从衬底选择性地移除氮化物的方法 |
| US10307167B2 (en) | 2012-12-14 | 2019-06-04 | Corquest Medical, Inc. | Assembly and method for left atrial appendage occlusion |
| US10813630B2 (en) | 2011-08-09 | 2020-10-27 | Corquest Medical, Inc. | Closure system for atrial wall |
| US10314594B2 (en) | 2012-12-14 | 2019-06-11 | Corquest Medical, Inc. | Assembly and method for left atrial appendage occlusion |
| US9978565B2 (en) | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
| TWI576938B (zh) | 2012-08-17 | 2017-04-01 | 斯克林集團公司 | 基板處理裝置及基板處理方法 |
| US20140142689A1 (en) | 2012-11-21 | 2014-05-22 | Didier De Canniere | Device and method of treating heart valve malfunction |
| US8973524B2 (en) * | 2012-11-27 | 2015-03-10 | Intermolecular, Inc. | Combinatorial spin deposition |
| US8871108B2 (en) | 2013-01-22 | 2014-10-28 | Tel Fsi, Inc. | Process for removing carbon material from substrates |
| US9017568B2 (en) | 2013-01-22 | 2015-04-28 | Tel Fsi, Inc. | Process for increasing the hydrophilicity of silicon surfaces following HF treatment |
| US10262880B2 (en) | 2013-02-19 | 2019-04-16 | Tokyo Electron Limited | Cover plate for wind mark control in spin coating process |
| US9768041B2 (en) | 2013-08-12 | 2017-09-19 | Veeco Precision Surface Processing Llc | Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle |
| US10707099B2 (en) | 2013-08-12 | 2020-07-07 | Veeco Instruments Inc. | Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle |
| US9321087B2 (en) | 2013-09-10 | 2016-04-26 | TFL FSI, Inc. | Apparatus and method for scanning an object through a fluid spray |
| US9799530B2 (en) * | 2013-10-17 | 2017-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and etching apparatus thereof |
| CN104550182A (zh) * | 2013-10-22 | 2015-04-29 | 宁夏中远天晟科技有限公司 | 一种铁路车辆车体焊修的焊烟排除系统 |
| US9566443B2 (en) | 2013-11-26 | 2017-02-14 | Corquest Medical, Inc. | System for treating heart valve malfunction including mitral regurgitation |
| KR102006059B1 (ko) * | 2014-02-24 | 2019-07-31 | 도쿄엘렉트론가부시키가이샤 | 스핀 코팅 프로세스에서 결함 제어를 위한 덮개 플레이트 |
| US10842626B2 (en) | 2014-12-09 | 2020-11-24 | Didier De Canniere | Intracardiac device to correct mitral regurgitation |
| US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
| CN107224790B (zh) * | 2016-03-23 | 2019-05-21 | 盟立自动化股份有限公司 | 具有内置式气液分离单元的湿法工艺设备 |
| DE102017101730A1 (de) * | 2017-01-30 | 2018-08-02 | Fresenius Medical Care Deutschland Gmbh | Neue Berührschutzvorrichtung für medizinische fluidführende Kassette und Kassette |
| WO2018200398A1 (en) | 2017-04-25 | 2018-11-01 | Veeco Precision Surface Processing Llc | Semiconductor wafer processing chamber |
| DE102017208329A1 (de) * | 2017-05-17 | 2018-11-22 | Ejot Gmbh & Co. Kg | Berührungsfreie Reinigungsvorrichtung |
| US20190070639A1 (en) * | 2017-09-07 | 2019-03-07 | Applied Materials, Inc. | Automatic cleaning machine for cleaning process kits |
| KR102116534B1 (ko) * | 2018-06-25 | 2020-05-28 | 주식회사 에이치에스하이테크 | 기판 세정용 노즐 및 그 제조 방법 |
| KR102343637B1 (ko) | 2019-06-13 | 2021-12-28 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| CN112397411B (zh) * | 2019-08-13 | 2024-08-06 | 台湾积体电路制造股份有限公司 | 包含抽出装置的制程系统及其监测方法 |
| KR102816642B1 (ko) * | 2021-12-31 | 2025-06-04 | 세메스 주식회사 | 기판 지지 유닛 및 플라즈마 처리 장치 |
| JP2024060970A (ja) * | 2022-10-20 | 2024-05-07 | 東京エレクトロン株式会社 | カップ、液処理装置及び液処理方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1599025A (zh) * | 1998-03-13 | 2005-03-23 | 塞米特公司 | 处理微电子工件的微环境反应器 |
| JP2006005315A (ja) * | 2004-06-21 | 2006-01-05 | Seiko Epson Corp | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (153)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US683440A (en) * | 1900-02-05 | 1901-10-01 | Edward G T Colles | Feed-water heater and purifier. |
| US3836329A (en) | 1971-10-22 | 1974-09-17 | Damon Corp | Method and apparatus for removing liquid from containers |
| US3990462A (en) | 1975-05-19 | 1976-11-09 | Fluoroware Systems Corporation | Substrate stripping and cleaning apparatus |
| JPS605530Y2 (ja) | 1979-09-05 | 1985-02-21 | 東光電気株式会社 | 樹脂モ−ルドコイル |
| JPS611699Y2 (enExample) | 1980-03-27 | 1986-01-21 | ||
| JPS5922792A (ja) | 1982-07-30 | 1984-02-06 | Kanzaki Paper Mfg Co Ltd | 感熱記録体用塗液の調成法 |
| JPS611699U (ja) * | 1984-06-11 | 1986-01-08 | 日本化機工業株式会社 | 空気流量増幅器 |
| US4682615A (en) | 1984-07-02 | 1987-07-28 | Fsi Corporation | Rinsing in acid processing of substrates |
| US4801335A (en) | 1984-07-02 | 1989-01-31 | Fsi Corporation | Rinsing in acid processing of substrates |
| US4609575A (en) | 1984-07-02 | 1986-09-02 | Fsi Corporation | Method of apparatus for applying chemicals to substrates in an acid processing system |
| US4544446A (en) | 1984-07-24 | 1985-10-01 | J. T. Baker Chemical Co. | VLSI chemical reactor |
| JP2555034B2 (ja) | 1986-09-17 | 1996-11-20 | 株式会社日立製作所 | 処理装置 |
| JPH0537217Y2 (enExample) | 1986-10-31 | 1993-09-21 | ||
| AT389959B (de) | 1987-11-09 | 1990-02-26 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben |
| CH675762A5 (enExample) | 1988-10-03 | 1990-10-31 | Peter Huerlimann | |
| US5246526A (en) | 1989-06-29 | 1993-09-21 | Hitachi, Ltd. | Surface treatment apparatus |
| KR910007593A (ko) * | 1989-10-17 | 1991-05-30 | 제임스 조셉 드롱 | 강제 유체대류에 의한 오염 입자 제거장치 및 방법 |
| US5271774A (en) | 1990-03-01 | 1993-12-21 | U.S. Philips Corporation | Method for removing in a centrifuge a liquid from a surface of a substrate |
| JP2555034Y2 (ja) | 1991-02-12 | 1997-11-19 | 三菱自動車エンジニアリング株式会社 | 遊星歯車機構 |
| US5395649A (en) | 1992-02-04 | 1995-03-07 | Sony Corporation | Spin coating apparatus for film formation over substrate |
| EP0611274B1 (de) | 1993-02-08 | 1998-12-02 | SEZ Semiconductor-Equipment Zubehör für die Halbleiterfertigung AG | Träger für scheibenförmige Gegenstände |
| CA2099711A1 (en) | 1993-06-29 | 1994-12-30 | Kevin Peter Kowalchuk | Method and apparatus for cleaning optical surfaces |
| US5472502A (en) | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
| US5571560A (en) | 1994-01-12 | 1996-11-05 | Lin; Burn J. | Proximity-dispensing high-throughput low-consumption resist coating device |
| JP3415670B2 (ja) | 1994-03-03 | 2003-06-09 | 三菱電機株式会社 | ウエハ洗浄装置 |
| US5783025A (en) | 1994-06-07 | 1998-07-21 | Texas Instruments Incorporated | Optical diebonding for semiconductor devices |
| KR0125238Y1 (ko) | 1994-11-04 | 1999-02-18 | 문정환 | 웨이퍼 세척장치 |
| TW494714B (en) | 1995-04-19 | 2002-07-11 | Tokyo Electron Ltd | Method of processing substrate and apparatus for processing substrate |
| JP3337870B2 (ja) | 1995-05-11 | 2002-10-28 | 大日本スクリーン製造株式会社 | 回転式基板洗浄装置 |
| JPH08316190A (ja) | 1995-05-18 | 1996-11-29 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| TW406216B (en) | 1995-05-24 | 2000-09-21 | Tokyo Electron Ltd | Apparatus for coating resist on substrate |
| JP3504023B2 (ja) | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
| JP3983831B2 (ja) | 1995-05-30 | 2007-09-26 | シグマメルテック株式会社 | 基板ベーキング装置及び基板ベーキング方法 |
| US6239038B1 (en) | 1995-10-13 | 2001-05-29 | Ziying Wen | Method for chemical processing semiconductor wafers |
| JPH11510219A (ja) | 1995-12-19 | 1999-09-07 | エフエスアイ インターナショナル インコーポレイテッド | スプレー・プロセッサを用いる金属膜の無電解めっき |
| JP3377909B2 (ja) | 1996-02-28 | 2003-02-17 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| JPH09314019A (ja) | 1996-05-27 | 1997-12-09 | Toshiba Corp | 表面処理方法および表面処理装置 |
| US5900059A (en) | 1996-05-29 | 1999-05-04 | Komatsu Electronic Metals Co., Ltd. | Method and apparatus for fabricating semiconductor single crystal |
| TW346649B (en) | 1996-09-24 | 1998-12-01 | Tokyo Electron Co Ltd | Method for wet etching a film |
| KR100277522B1 (ko) | 1996-10-08 | 2001-01-15 | 이시다 아키라 | 기판처리장치 |
| JP3245813B2 (ja) | 1996-11-27 | 2002-01-15 | 東京エレクトロン株式会社 | 塗布膜形成装置 |
| JPH1133506A (ja) | 1997-07-24 | 1999-02-09 | Tadahiro Omi | 流体処理装置及び洗浄処理システム |
| JPH10163154A (ja) | 1996-12-25 | 1998-06-19 | Sugai:Kk | 基板洗浄方法および装置 |
| JPH10199852A (ja) | 1997-01-13 | 1998-07-31 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置 |
| JPH10209102A (ja) | 1997-01-17 | 1998-08-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| AT405655B (de) | 1997-03-26 | 1999-10-25 | Sez Semiconduct Equip Zubehoer | Verfahren und vorrichtung zum einseitigen bearbeiten scheibenförmiger gegenstände |
| AT407586B (de) | 1997-05-23 | 2001-04-25 | Sez Semiconduct Equip Zubehoer | Anordnung zum behandeln scheibenförmiger gegenstände, insbesondere von siliziumwafern |
| TW402737B (en) | 1997-05-27 | 2000-08-21 | Tokyo Electron Ltd | Cleaning/drying device and method |
| JPH118213A (ja) | 1997-06-13 | 1999-01-12 | Komatsu Ltd | 半導体ウエハの処理方法 |
| JPH1154471A (ja) | 1997-08-05 | 1999-02-26 | Tokyo Electron Ltd | 処理装置及び処理方法 |
| JPH11129184A (ja) | 1997-09-01 | 1999-05-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板搬入搬出装置 |
| JP3555724B2 (ja) * | 1997-09-04 | 2004-08-18 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| US6491764B2 (en) | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
| US6398975B1 (en) | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
| US6260562B1 (en) | 1997-10-20 | 2001-07-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning apparatus and method |
| US6332470B1 (en) | 1997-12-30 | 2001-12-25 | Boris Fishkin | Aerosol substrate cleaner |
| JP3333135B2 (ja) | 1998-06-25 | 2002-10-07 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| JP2000124181A (ja) | 1998-10-13 | 2000-04-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| DE19854743A1 (de) | 1998-11-27 | 2000-06-08 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum Naßätzen einer Kante einer Halbleiterscheibe |
| US6680253B2 (en) * | 1999-01-22 | 2004-01-20 | Semitool, Inc. | Apparatus for processing a workpiece |
| JP2000286267A (ja) | 1999-03-31 | 2000-10-13 | Tokyo Electron Ltd | 熱処理方法 |
| DE59900743D1 (de) | 1999-04-28 | 2002-02-28 | Sez Semiconduct Equip Zubehoer | Vorrichtung und Verfahren zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen |
| US6221781B1 (en) | 1999-05-27 | 2001-04-24 | Fsi International, Inc. | Combined process chamber with multi-positionable pedestal |
| AT407680B (de) | 1999-06-04 | 2001-05-25 | Sez Semiconduct Equip Zubehoer | Verfahren und vorrichtung zum trocknen von scheibenförmigen gegenständen |
| JP2001015481A (ja) | 1999-06-30 | 2001-01-19 | Dainippon Screen Mfg Co Ltd | エッチング装置 |
| JP4257816B2 (ja) | 2000-03-16 | 2009-04-22 | 三益半導体工業株式会社 | 廃液回収機構付ウェーハ表面処理装置 |
| TW504776B (en) | 1999-09-09 | 2002-10-01 | Mimasu Semiconductor Ind Co | Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism |
| US6299804B1 (en) | 1999-09-16 | 2001-10-09 | Husky Injection Molding Systems Ltd. | Air cooling system for preform molding |
| JP4426036B2 (ja) | 1999-12-02 | 2010-03-03 | 東京エレクトロン株式会社 | 基板処理装置 |
| US6243966B1 (en) * | 1999-12-10 | 2001-06-12 | Applied Materials, Inc. | Air amplifier with uniform output flow pattern |
| JP2001189260A (ja) | 1999-12-28 | 2001-07-10 | Tokyo Electron Ltd | 液処理装置及びその方法 |
| US6533954B2 (en) | 2000-02-28 | 2003-03-18 | Parker-Hannifin Corporation | Integrated fluid injection air mixing system |
| US6594847B1 (en) | 2000-03-28 | 2003-07-22 | Lam Research Corporation | Single wafer residue, thin film removal and clean |
| JP4067307B2 (ja) | 2000-04-27 | 2008-03-26 | 株式会社荏原製作所 | 回転保持装置 |
| US7364625B2 (en) | 2000-05-30 | 2008-04-29 | Fsi International, Inc. | Rinsing processes and equipment |
| US6589361B2 (en) | 2000-06-16 | 2003-07-08 | Applied Materials Inc. | Configurable single substrate wet-dry integrated cluster cleaner |
| US6927176B2 (en) | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
| US20020063169A1 (en) | 2000-06-26 | 2002-05-30 | Applied Materials, Inc. | Wafer spray configurations for a single wafer processing apparatus |
| US7451774B2 (en) | 2000-06-26 | 2008-11-18 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
| US6488040B1 (en) | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
| US6536454B2 (en) | 2000-07-07 | 2003-03-25 | Sez Ag | Device for treating a disc-shaped object |
| WO2002004134A1 (en) | 2000-07-12 | 2002-01-17 | Fsi International, Inc. | Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices |
| JP2004502535A (ja) * | 2000-07-12 | 2004-01-29 | エフエスアイ インターナショナル インコーポレイテッド | マイクロエレクトロニックデバイスへの組込みに好適な低誘電率誘電体膜を形成する熱処理システムおよび方法 |
| US6393656B1 (en) | 2000-07-20 | 2002-05-28 | Oreck Holdings, Llc | Belt-mounted vacuum apparatus and methods |
| US6688784B1 (en) | 2000-10-25 | 2004-02-10 | Advanced Micro Devices, Inc. | Parallel plate development with multiple holes in top plate for control of developer flow and pressure |
| US6705331B2 (en) | 2000-11-20 | 2004-03-16 | Dainippon Screen Mfg., Co., Ltd. | Substrate cleaning apparatus |
| JP2002246358A (ja) | 2001-02-05 | 2002-08-30 | Applied Materials Inc | ウェハ検出装置、洗浄乾燥装置およびメッキ装置 |
| JP4037624B2 (ja) | 2001-05-21 | 2008-01-23 | 株式会社東芝 | 基板処理装置及び基板処理方法 |
| JP2002359220A (ja) * | 2001-05-31 | 2002-12-13 | Tokyo Electron Ltd | 基板の処理装置 |
| JP3511514B2 (ja) | 2001-05-31 | 2004-03-29 | エム・エフエスアイ株式会社 | 基板浄化処理装置、ディスペンサー、基板保持機構、基板の浄化処理用チャンバー、及びこれらを用いた基板の浄化処理方法 |
| WO2003006215A2 (en) | 2001-07-13 | 2003-01-23 | Fsi International | Robotic system control |
| US7171973B2 (en) | 2001-07-16 | 2007-02-06 | Tokyo Electron Limited | Substrate processing apparatus |
| JP3958539B2 (ja) | 2001-08-02 | 2007-08-15 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP2003073847A (ja) | 2001-08-29 | 2003-03-12 | Araco Corp | 耐食性複層構造材の製造方法 |
| WO2003021642A2 (en) * | 2001-08-31 | 2003-03-13 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| JP2003086564A (ja) | 2001-09-14 | 2003-03-20 | Mitsubishi Electric Corp | 遠心乾燥装置および半導体装置の製造方法ならびに半導体製造装置 |
| JP3749848B2 (ja) | 2001-09-28 | 2006-03-01 | 大日本スクリーン製造株式会社 | 基板周縁処理装置 |
| CN100349254C (zh) | 2001-10-03 | 2007-11-14 | 硅谷集团公司 | 减轻紧邻表面液体分散喷流之间交叉污染的方法和装置 |
| US20030070695A1 (en) | 2001-10-16 | 2003-04-17 | Applied Materials, Inc. | N2 splash guard for liquid injection on the rotating substrate |
| JP3892792B2 (ja) | 2001-11-02 | 2007-03-14 | 大日本スクリーン製造株式会社 | 基板処理装置および基板洗浄装置 |
| US20040062874A1 (en) | 2002-08-14 | 2004-04-01 | Kim Yong Bae | Nozzle assembly, system and method for wet processing a semiconductor wafer |
| US6826910B1 (en) | 2002-01-28 | 2004-12-07 | Mark Richard Easton | Extreme charger with air amplifier |
| TWI261875B (en) * | 2002-01-30 | 2006-09-11 | Tokyo Electron Ltd | Processing apparatus and substrate processing method |
| JP4074814B2 (ja) | 2002-01-30 | 2008-04-16 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| JP3979113B2 (ja) * | 2002-02-12 | 2007-09-19 | セイコーエプソン株式会社 | チャンバ装置の大気置換方法、チャンバ装置、これを備えた電気光学装置および有機ｅｌ装置 |
| US6913651B2 (en) | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
| JP4570008B2 (ja) | 2002-04-16 | 2010-10-27 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| KR100479627B1 (ko) * | 2002-05-25 | 2005-04-06 | 유니셈 주식회사 | 폐가스 처리용 습식 전처리 장치 및 그 전처리 방법 |
| JP2004031400A (ja) | 2002-06-21 | 2004-01-29 | Sipec Corp | 基板処理装置及びその処理方法 |
| JP4005879B2 (ja) | 2002-08-30 | 2007-11-14 | 株式会社東芝 | 現像方法、基板処理方法、及び基板処理装置 |
| JP4146709B2 (ja) | 2002-10-31 | 2008-09-10 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| US7584760B2 (en) * | 2002-09-13 | 2009-09-08 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| US7531039B2 (en) | 2002-09-25 | 2009-05-12 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing system |
| US7389783B2 (en) | 2002-09-30 | 2008-06-24 | Lam Research Corporation | Proximity meniscus manifold |
| US7293571B2 (en) | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
| KR100493849B1 (ko) | 2002-09-30 | 2005-06-08 | 삼성전자주식회사 | 웨이퍼 건조 장치 |
| US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
| KR100466297B1 (ko) | 2002-10-17 | 2005-01-13 | 한국디엔에스 주식회사 | 반도체 제조 장치 |
| JP4133209B2 (ja) | 2002-10-22 | 2008-08-13 | 株式会社神戸製鋼所 | 高圧処理装置 |
| US7051743B2 (en) | 2002-10-29 | 2006-05-30 | Yong Bae Kim | Apparatus and method for cleaning surfaces of semiconductor wafers using ozone |
| US7022193B2 (en) | 2002-10-29 | 2006-04-04 | In Kwon Jeong | Apparatus and method for treating surfaces of semiconductor wafers using ozone |
| JP3759492B2 (ja) * | 2002-12-03 | 2006-03-22 | 近藤工業株式会社 | ミニエンバライメント方式の半導体製造装置 |
| EP1571697A4 (en) | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
| US7306002B2 (en) | 2003-01-04 | 2007-12-11 | Yong Bae Kim | System and method for wet cleaning a semiconductor wafer |
| WO2004070807A1 (ja) | 2003-02-03 | 2004-08-19 | Personal Creation Ltd. | 基板の処理装置及び基板の処理方法 |
| JP2004265912A (ja) | 2003-02-03 | 2004-09-24 | Personal Creation Ltd | 基板の処理装置 |
| JP4105574B2 (ja) | 2003-03-26 | 2008-06-25 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| KR101121937B1 (ko) | 2003-03-31 | 2012-03-14 | 램 리써치 코포레이션 | 웨이퍼 처리를 위한 챔버 및 관련 방법 |
| US7089076B2 (en) | 2003-05-16 | 2006-08-08 | Fsi International, Inc. | Scheduling multi-robot processing systems |
| JP4494840B2 (ja) | 2003-06-27 | 2010-06-30 | 大日本スクリーン製造株式会社 | 異物除去装置、基板処理装置および基板処理方法 |
| US7827930B2 (en) * | 2004-01-26 | 2010-11-09 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
| JP2005167089A (ja) | 2003-12-04 | 2005-06-23 | Shimada Phys & Chem Ind Co Ltd | 基板洗浄装置および基板洗浄方法 |
| US7436786B2 (en) | 2003-12-09 | 2008-10-14 | International Business Machines Corporation | Telecommunications system for minimizing the effect of white noise data packets for the generation of required white noise on transmission channel utilization |
| JP4369325B2 (ja) | 2003-12-26 | 2009-11-18 | 東京エレクトロン株式会社 | 現像装置及び現像処理方法 |
| JP4409312B2 (ja) | 2004-02-18 | 2010-02-03 | 大日本スクリーン製造株式会社 | 基板周縁処理装置および基板周縁処理方法 |
| US7323080B2 (en) | 2004-05-04 | 2008-01-29 | Semes Co., Ltd. | Apparatus for treating substrate |
| JP4288207B2 (ja) | 2004-05-25 | 2009-07-01 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US7699932B2 (en) * | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
| JP2005353739A (ja) | 2004-06-09 | 2005-12-22 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
| JP4271109B2 (ja) | 2004-09-10 | 2009-06-03 | 東京エレクトロン株式会社 | 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置 |
| JP2006086474A (ja) | 2004-09-17 | 2006-03-30 | Sharp Corp | 基板洗浄用ノズルおよび基板洗浄装置 |
| US7476616B2 (en) | 2004-12-13 | 2009-01-13 | Fsi International, Inc. | Reagent activator for electroless plating |
| JP4410119B2 (ja) | 2005-02-03 | 2010-02-03 | 東京エレクトロン株式会社 | 洗浄装置、塗布、現像装置及び洗浄方法 |
| KR100993311B1 (ko) | 2005-04-01 | 2010-11-09 | 에프에스아이 인터내쇼날 인크. | 하나 이상의 처리 유체로 마이크로일렉트로닉 작업물을 처리하는 장치용 이동 및 중첩 가능한 배플들을 포함하는 소형 덕트 시스템 |
| US8070884B2 (en) | 2005-04-01 | 2011-12-06 | Fsi International, Inc. | Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance |
| US7309847B2 (en) | 2006-01-12 | 2007-12-18 | Carleton Life Support Systems, Inc. | Ceramic oxygen generating oven |
| CN101484974B (zh) * | 2006-07-07 | 2013-11-06 | Fsi国际公司 | 用于处理微电子工件的设备和方法以及遮挡结构 |
| CN101495248A (zh) | 2006-07-07 | 2009-07-29 | Fsi国际公司 | 液体气溶胶颗粒去除方法 |
| JP4644170B2 (ja) | 2006-09-06 | 2011-03-02 | 栗田工業株式会社 | 基板処理装置および基板処理方法 |
| US20080213076A1 (en) | 2007-03-02 | 2008-09-04 | Stephen Hanson | Edge grip end effector |
| JP5199339B2 (ja) | 2007-05-18 | 2013-05-15 | ティーイーエル エフエスアイ，インコーポレイティド | 水蒸気または蒸気を用いた基板の処理方法 |
| WO2009020524A1 (en) | 2007-08-07 | 2009-02-12 | Fsi International, Inc. | Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses |
| CN102683249B (zh) | 2008-05-09 | 2015-06-17 | 泰尔Fsi公司 | 用于处理微电子工件的系统 |
-
2009
- 2009-05-05 CN CN201210165024.3A patent/CN102683249B/zh active Active
- 2009-05-05 CN CN2009801157869A patent/CN102017065B/zh active Active
- 2009-05-05 KR KR1020137017895A patent/KR20130083940A/ko not_active Ceased
- 2009-05-05 US US12/387,607 patent/US8235062B2/en not_active Expired - Fee Related
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1599025A (zh) * | 1998-03-13 | 2005-03-23 | 塞米特公司 | 处理微电子工件的微环境反应器 |
| JP2006005315A (ja) * | 2004-06-21 | 2006-01-05 | Seiko Epson Corp | プラズマ処理装置およびプラズマ処理方法 |
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| CN102017065A (zh) | 2011-04-13 |
| TWI556875B (zh) | 2016-11-11 |
| KR101652270B1 (ko) | 2016-08-30 |
| JP2011520283A (ja) | 2011-07-14 |
| US20090280235A1 (en) | 2009-11-12 |
| US20120272893A1 (en) | 2012-11-01 |
| TWI511799B (zh) | 2015-12-11 |
| TW201000217A (en) | 2010-01-01 |
| TW201328788A (zh) | 2013-07-16 |
| US8684015B2 (en) | 2014-04-01 |
| KR20110005699A (ko) | 2011-01-18 |
| US20130213485A1 (en) | 2013-08-22 |
| KR101690047B1 (ko) | 2016-12-27 |
| JP5705723B2 (ja) | 2015-04-22 |
| KR20160015389A (ko) | 2016-02-12 |
| WO2009137032A3 (en) | 2010-01-28 |
| US8235062B2 (en) | 2012-08-07 |
| WO2009137032A2 (en) | 2009-11-12 |
| CN102683249A (zh) | 2012-09-19 |
| JP5705903B2 (ja) | 2015-04-22 |
| KR20160014774A (ko) | 2016-02-11 |
| CN102017065B (zh) | 2012-07-18 |
| US9039840B2 (en) | 2015-05-26 |
| JP2013153200A (ja) | 2013-08-08 |
| KR20130083940A (ko) | 2013-07-23 |
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