JP5473206B2 - 副処理平面を使用する急速伝導冷却 - Google Patents

副処理平面を使用する急速伝導冷却 Download PDF

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Publication number
JP5473206B2
JP5473206B2 JP2007265808A JP2007265808A JP5473206B2 JP 5473206 B2 JP5473206 B2 JP 5473206B2 JP 2007265808 A JP2007265808 A JP 2007265808A JP 2007265808 A JP2007265808 A JP 2007265808A JP 5473206 B2 JP5473206 B2 JP 5473206B2
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substrate
source
cooling plate
coolant
chamber
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JP2008166706A5 (https=
JP2008166706A (ja
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ソラジ クアーシェッド
エヌ． ラーナー アレクサンダー
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)
  • Furnace Details (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2007265808A 2006-12-14 2007-10-11 副処理平面を使用する急速伝導冷却 Active JP5473206B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/611,061 US7378618B1 (en) 2006-12-14 2006-12-14 Rapid conductive cooling using a secondary process plane
US11/611061 2006-12-14

Related Child Applications (1)

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JP2013207395A Division JP2014057073A (ja) 2006-12-14 2013-10-02 副処理平面を使用する急速伝導冷却

Publications (3)

Publication Number Publication Date
JP2008166706A JP2008166706A (ja) 2008-07-17
JP2008166706A5 JP2008166706A5 (https=) 2010-10-14
JP5473206B2 true JP5473206B2 (ja) 2014-04-16

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ID=39312914

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007265808A Active JP5473206B2 (ja) 2006-12-14 2007-10-11 副処理平面を使用する急速伝導冷却
JP2013207395A Pending JP2014057073A (ja) 2006-12-14 2013-10-02 副処理平面を使用する急速伝導冷却

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JP2013207395A Pending JP2014057073A (ja) 2006-12-14 2013-10-02 副処理平面を使用する急速伝導冷却

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US (5) US7378618B1 (https=)
EP (1) EP1933368A3 (https=)
JP (2) JP5473206B2 (https=)
KR (4) KR20080055608A (https=)
CN (2) CN103943537B (https=)
TW (3) TWI401746B (https=)

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