JP6853038B2 - Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 - Google Patents
Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 Download PDFInfo
- Publication number
- JP6853038B2 JP6853038B2 JP2016523737A JP2016523737A JP6853038B2 JP 6853038 B2 JP6853038 B2 JP 6853038B2 JP 2016523737 A JP2016523737 A JP 2016523737A JP 2016523737 A JP2016523737 A JP 2016523737A JP 6853038 B2 JP6853038 B2 JP 6853038B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- inches
- lip
- single ring
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 127
- 238000012545 processing Methods 0.000 title description 64
- 230000007547 defect Effects 0.000 title description 13
- 238000013461 design Methods 0.000 title description 4
- 230000009467 reduction Effects 0.000 title description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本明細書内の実施形態は、概して、プラズマ処理チャンバ内で使用するための単一リングプロセスキットに関する。
様々な半導体製造プロセス(とりわけ、プラズマ援用エッチング、物理蒸着、及び化学蒸着など)は、半導体ワークピースが処理中に(カバーリングとしても知られる)誘電体カラーと内部で係合されるプラズマ処理チャンバ内で実行される。例えば、ワークピース(例えば、半導体基板)をエッチングするために構成されたプラズマ処理チャンバ内で、基板は、処理チャンバ内の基板支持台上に取り付けられる。基板支持台は、処理チャンバに供給される処理ガスの混合物から形成されたプラズマを維持するためにRFバイアスを印加することができる金属電極を含む。処理チャンバ内の圧力は、チャンバからのエッチング副生成物もまた除去するポンプによって維持される。RF電源は、基板支持台内部の電極に結合され、これによってプラズマに対して負のバイアス電圧を電極上に生成する。バイアス電圧は、ワークピースに衝突するイオンを引き付け、これによって所望の製造プロセスを促進する。電極が負にバイアスされているので、基板支持台は、多くの場合、カソードと呼ばれる。
Claims (13)
- 単一リングであって、
円形リング状本体であって、本体はセラミックス材料から製造されており、
本体の中心線に近接して最も近い内面と、
内面と反対側の外面と、
外側底部と内側底部の間に形成されたアイソレータキーを有する底面であって、内側底面でのアイソレータキーの深さは、外側底面での深さよりも深くなっている底面と、
外側端部及び内側端部を有する水平な上面であって、外側端部は外面に隣接し、アイソレータキーの内上面は水平な上面と平行になっている上面と、
内側端部に隣接する傾斜壁であって、中心線に向かって約80度で下方へ延び、約2.2mmの垂直立ち上がりを有する傾斜壁と、
傾斜壁から第2垂直壁まで約6mmの長さだけ延びる第1のリップであって、上面と実質的に平行であり、約301.85mmから約301.98mmの内径を有する第1のリップと、
第1のリップと実質的に平行であり、段差の下の第2垂直壁からリングの中心線に向かって延出する内面上に配置された第2のリップであって、第2のリップは、上で300mmの基板を支持するように構成され、第2のリップの底部は約5.9mmの長さを有し、本体は、300mmの基板と段差の下の第2垂直壁の間の第2のリップ上に2mm未満のギャップを画定するような大きさに作られた第2のリップを含む円形リング状本体を含む単一リング。 - 第2のリップ及び内面は、直径300mmの基板を支持するように構成されている、請求項1記載の単一リング。
- ギャップは0.9mmである、請求項2記載の単一リング。
- 外面は15.12インチの直径を有する、請求項2記載の単一リング。
- 第2垂直壁は、11.884インチ〜11.889インチの直径を有する円筒を形成する、請求項2記載の単一リング。
- 第2のリップ及び内面は、直径200mmの基板又は直径450mmの基板を支持するように構成されている、請求項1記載の単一リング。
- 水平な上面に対して垂直な方向と、傾斜壁の延長線のなす角度は80°である、請求項1記載の単一リング。
- アイソレータキーは、底面を内側底面と外側底面に分割する円形溝であり、内側底面及び外側底面は、同一平面上にはない、請求項1記載の単一リング。
- 第2垂直壁の高さは0.054インチである、請求項2記載の単一リング。
- 第2のリップは、11.736インチ〜11.741インチの内径を有する、請求項9記載の単一リング。
- セラミックス材料はY2O3である、請求項1記載の単一リング。
- 第2のリップから上面までの距離は0.14インチである、請求項1記載の単一リング。
- 本体はY2O3から製造され、ギャップは0.9mmであり、外面は15.12インチの直径を有し、第2垂直壁は、11.884インチ〜11.889インチの直径を有する円筒を形成し、水平な上面に対して垂直な方向と、傾斜壁の延長線のなす角度は80°であり、アイソレータキーは、底面を内側底面と外側底面に分割する円形溝であり、内側底面及び外側底面は、同一平面上にはなく、第2垂直壁の高さは0.054インチであり、第2のリップは11.736インチ〜11.741インチの内径を有し、第2のリップから上面までの距離は0.14インチである、請求項1記載の単一リング。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361839823P | 2013-06-26 | 2013-06-26 | |
US61/839,823 | 2013-06-26 | ||
PCT/US2014/036213 WO2014209492A1 (en) | 2013-06-26 | 2014-04-30 | Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020213400A Division JP2021068909A (ja) | 2013-06-26 | 2020-12-23 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016530706A JP2016530706A (ja) | 2016-09-29 |
JP2016530706A5 JP2016530706A5 (ja) | 2017-06-08 |
JP6853038B2 true JP6853038B2 (ja) | 2021-03-31 |
Family
ID=52142541
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016523737A Active JP6853038B2 (ja) | 2013-06-26 | 2014-04-30 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
JP2020213400A Pending JP2021068909A (ja) | 2013-06-26 | 2020-12-23 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020213400A Pending JP2021068909A (ja) | 2013-06-26 | 2020-12-23 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20160099162A1 (ja) |
JP (2) | JP6853038B2 (ja) |
KR (1) | KR102253990B1 (ja) |
CN (2) | CN105074869A (ja) |
TW (1) | TWM492915U (ja) |
WO (1) | WO2014209492A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US9633862B2 (en) * | 2015-08-31 | 2017-04-25 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
KR20190128638A (ko) * | 2017-04-07 | 2019-11-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 에지 상의 플라즈마 밀도 제어 |
CN118248616A (zh) * | 2017-07-24 | 2024-06-25 | 朗姆研究公司 | 可移动的边缘环设计 |
US11613068B2 (en) * | 2017-09-13 | 2023-03-28 | Lg Chem, Ltd. | Preparation method of patterned substrate |
CN108063110B (zh) * | 2018-01-10 | 2023-11-24 | 池州海琳服装有限公司 | 一种硅片浮动支撑机构 |
CN108269753B (zh) * | 2018-01-10 | 2023-12-05 | 池州海琳服装有限公司 | 一种硅片单面清洗机 |
KR20210062094A (ko) * | 2018-10-18 | 2021-05-28 | 램 리써치 코포레이션 | 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링 |
KR20220024568A (ko) * | 2019-06-18 | 2022-03-03 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들을 위한 감소된 직경 캐리어 링 하드웨어 |
KR20220038172A (ko) * | 2019-08-05 | 2022-03-25 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들을 위한 에지 링 시스템들 |
US20220282371A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Electrostatic chuck with metal shaft |
CN217387074U (zh) * | 2021-12-03 | 2022-09-06 | 朗姆研究公司 | 用于衬底处理系统中增强屏蔽的宽覆盖边缘环 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001522142A (ja) * | 1997-11-03 | 2001-11-13 | エーエスエム アメリカ インコーポレイテッド | 改良された低質量ウェハ支持システム |
KR100292410B1 (ko) * | 1998-09-23 | 2001-06-01 | 윤종용 | 불순물 오염이 억제된 반도체 제조용 반응 챔버 |
JP4209618B2 (ja) * | 2002-02-05 | 2009-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びリング部材 |
TW200626020A (en) * | 2001-12-13 | 2006-07-16 | Tokyo Electron Ltd | Ring mechanism, and plasma processor using the ring mechanism |
JP4286025B2 (ja) * | 2003-03-03 | 2009-06-24 | 川崎マイクロエレクトロニクス株式会社 | 石英治具の再生方法、再生使用方法および半導体装置の製造方法 |
TW200520632A (en) * | 2003-09-05 | 2005-06-16 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
US7024105B2 (en) * | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
KR101771334B1 (ko) * | 2004-12-15 | 2017-08-24 | 가부시키가이샤 니콘 | 기판 유지 장치, 노광 장치 및 디바이스 제조방법 |
KR101153118B1 (ko) * | 2005-10-12 | 2012-06-07 | 파나소닉 주식회사 | 플라즈마 처리장치 및 플라즈마 처리방법 |
JP2007250967A (ja) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置および方法とフォーカスリング |
US7378618B1 (en) * | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US8287650B2 (en) * | 2008-09-10 | 2012-10-16 | Applied Materials, Inc. | Low sloped edge ring for plasma processing chamber |
KR20100043844A (ko) * | 2008-10-21 | 2010-04-29 | 주식회사 테스 | 플라즈마 처리 장치 |
SG170717A1 (en) * | 2009-11-02 | 2011-05-30 | Lam Res Corp | Hot edge ring with sloped upper surface |
DE202010015933U1 (de) * | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
US10825708B2 (en) * | 2011-12-15 | 2020-11-03 | Applied Materials, Inc. | Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability |
-
2014
- 2014-04-30 CN CN201480018535.XA patent/CN105074869A/zh active Pending
- 2014-04-30 US US14/765,872 patent/US20160099162A1/en active Pending
- 2014-04-30 KR KR1020157031577A patent/KR102253990B1/ko active IP Right Grant
- 2014-04-30 CN CN202010081458.XA patent/CN111180305A/zh active Pending
- 2014-04-30 JP JP2016523737A patent/JP6853038B2/ja active Active
- 2014-04-30 WO PCT/US2014/036213 patent/WO2014209492A1/en active Application Filing
- 2014-05-07 TW TW103207940U patent/TWM492915U/zh unknown
-
2020
- 2020-12-23 JP JP2020213400A patent/JP2021068909A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR102253990B1 (ko) | 2021-05-18 |
JP2016530706A (ja) | 2016-09-29 |
US20160099162A1 (en) | 2016-04-07 |
KR20160023646A (ko) | 2016-03-03 |
CN105074869A (zh) | 2015-11-18 |
CN111180305A (zh) | 2020-05-19 |
TWM492915U (zh) | 2015-01-01 |
JP2021068909A (ja) | 2021-04-30 |
WO2014209492A1 (en) | 2014-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6853038B2 (ja) | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 | |
US10090161B2 (en) | Plasma etching apparatus and plasma etching method | |
KR102190302B1 (ko) | 엣지 임계 치수 균일성 제어를 위한 프로세스 키트 | |
JP6306861B2 (ja) | プラズマチャンバーにおいて半導体ワークピースを取り巻く導電性カラー | |
JP5759718B2 (ja) | プラズマ処理装置 | |
KR101720670B1 (ko) | 기판 처리 장치 및 그 클리닝 방법 및 프로그램을 기록한 기록매체 | |
US20190043697A1 (en) | Minimization of ring erosion during plasma processes | |
US20140311676A1 (en) | Substrate mounting table and plasma treatment device | |
TWM462943U (zh) | 用於電漿處理腔室之蓋環 | |
TW202105502A (zh) | 具有晶圓邊緣電漿殼層調諧能力的半導體電漿處理設備 | |
TWI752545B (zh) | 使用陶瓷塗覆的石英蓋體的基板處理腔室及方法 | |
JP2008103403A (ja) | 基板載置台及びプラズマ処理装置 | |
KR20070081749A (ko) | 기판 처리실의 세정 방법, 기억 매체 및 기판 처리실 | |
JP2018516449A (ja) | 面取り部のポリマー低減のためのエッジリング | |
JP5808750B2 (ja) | 傾斜側壁を備える静電チャック | |
JP2006165093A (ja) | プラズマ処理装置 | |
TWI380360B (ja) | ||
TW202117839A (zh) | 靜電吸著方法及電漿處理裝置 | |
JP2006339678A (ja) | プラズマ処理装置及び電極部材 | |
TWI826845B (zh) | 多壓雙極性靜電夾持 | |
JP5064708B2 (ja) | プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170404 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170407 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180223 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180306 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180605 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180803 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180906 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20181114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190314 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20190314 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20190322 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20190327 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20190412 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20190416 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20190827 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20200225 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20200324 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20200414 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20200623 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200922 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20201006 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20201022 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20201124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201223 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20210202 |
|
C03 | Trial/appeal decision taken |
Free format text: JAPANESE INTERMEDIATE CODE: C03 Effective date: 20210309 |
|
C30A | Notification sent |
Free format text: JAPANESE INTERMEDIATE CODE: C3012 Effective date: 20210309 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210311 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6853038 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |