JP2018516449A - 面取り部のポリマー低減のためのエッジリング - Google Patents
面取り部のポリマー低減のためのエッジリング Download PDFInfo
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- JP2018516449A JP2018516449A JP2017541637A JP2017541637A JP2018516449A JP 2018516449 A JP2018516449 A JP 2018516449A JP 2017541637 A JP2017541637 A JP 2017541637A JP 2017541637 A JP2017541637 A JP 2017541637A JP 2018516449 A JP2018516449 A JP 2018516449A
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- 229920000642 polymer Polymers 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 238000012545 processing Methods 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 22
- 238000011109 contamination Methods 0.000 abstract description 9
- 230000002093 peripheral effect Effects 0.000 abstract description 9
- 230000006854 communication Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Abstract
Description
本開示の実施形態は、概して、半導体処理システムに関する。より具体的には、本開示の実施形態は、半導体製造における基板の面取り部又は裏面からポリマーを低減するために利用される半導体処理システムに使用されるエッジリングに関する。
集積回路は、単一のチップ上に何百万ものコンポーネント(例えば、トランジスタ、コンデンサ、及び抵抗器)を含むことができる複雑なデバイスに発展してきた。チップ設計の進化には、より高速な回路とより大きな回路密度が絶えず求められている。より大きな回路密度に対する要求は、集積回路コンポーネントの寸法の低減を必要とする。
Claims (15)
- ベース円形リング上に形成された中心開口を画定する内面と、ベース円形リングの周囲を画定する外面とを有し、上部本体と、上部本体に接続された下部とを含むベース円形リングと、
ベース円形リングの内面かつ上部本体の第1の上面の上方に形成され、上部本体の第1の上面の上方にポケットを画定する段差部と、
ベース円形リングの第1の上面上に形成された複数の隆起構造とを含むエッジリング。 - 段差部は、第1の上面に傾斜面を介して接続された第2の上面を含む、請求項1記載のエッジリング。
- 段差部は、段差部に形成された実質的に垂直な側壁を介して第1の上面に接続された第2の上面を含む、請求項1記載のエッジリング。
- 複数の隆起構造は、プラズマ処理チャンバ内に実装されたときに、基板と係合するように構成されたベース円形リングの内面に接続された第1の端部を有する、請求項1記載のエッジリング。
- 隆起構造は、ベース円形リングの第1の上面の幅に実質的に一致する長さを有する、請求項1記載のエッジリング。
- 複数の隆起構造は、プラズマ処理チャンバ内に実装されたときに、その上面を通ってシャドーリングと係合するように構成される、請求項1記載のエッジリング。
- ベース円形リングは、Al2O3、AlN、Y2O3、Si又はSiC、石英、イットリウム含有材料、及び陽極酸化Al2O3で製造される、請求項1記載のエッジリング。
- ベース円形リングの下部に形成された凹部を含む、請求項1記載のエッジリング。
- ベース円形リングの内面に形成された段差部は、プラズマ処理チャンバ内に実装されたときに、基板支持アセンブリの側壁の大部分を実質的に覆うように構成される、請求項1記載のエッジリング。
- ベース円形リングの内面に形成された段差部は、プラズマ処理チャンバ内に実装された場合に、基板支持アセンブリの側壁の第2の部分を露出させる段差部の上方に空間を残しつつ、基板支持アセンブリの側壁の第1の部分を実質的に覆うように構成される、請求項1記載のエッジリング。
- 段差部の前記第2の上面は、プラズマ処理チャンバ内に実装されたときに、基板の裏面又は面取り部と係合するように構成される、請求項1記載のエッジリング。
- 凹部によって分割されたベース円形リングの下部に形成された第1の下部及び第2の部分を含む、請求項8記載のエッジリング。
- 第1の下部は、第2の下部の第2の深さよりも約10%〜約50%長い第1の深さを有する、請求項12記載のエッジリング。
- ポケットは、ベース円形リングの第1の上面と段差部の第2の上面との間に画定された約1mm〜約5mmの段差高さを有する、請求項1記載のエッジリング。
- 隆起構造の上面は、シャドーリングの底部と平行になるように構成された平面である、請求項6記載のエッジリング。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/690,121 US10903055B2 (en) | 2015-04-17 | 2015-04-17 | Edge ring for bevel polymer reduction |
US14/690,121 | 2015-04-17 | ||
PCT/US2016/013390 WO2016167852A1 (en) | 2015-04-17 | 2016-01-14 | Edge ring for bevel polymer reduction |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018516449A true JP2018516449A (ja) | 2018-06-21 |
JP6810695B2 JP6810695B2 (ja) | 2021-01-06 |
Family
ID=57126737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017541637A Active JP6810695B2 (ja) | 2015-04-17 | 2016-01-14 | 面取り部のポリマー低減のためのエッジリング |
Country Status (6)
Country | Link |
---|---|
US (1) | US10903055B2 (ja) |
JP (1) | JP6810695B2 (ja) |
KR (1) | KR102501702B1 (ja) |
CN (2) | CN106057616B (ja) |
TW (2) | TWI686861B (ja) |
WO (1) | WO2016167852A1 (ja) |
Families Citing this family (9)
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US10903055B2 (en) * | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
CN108231525B (zh) * | 2016-12-14 | 2020-03-31 | 北京北方华创微电子装备有限公司 | 一种腔室和半导体设备 |
CN110249416B (zh) * | 2017-04-07 | 2023-09-12 | 应用材料公司 | 在基板边缘上的等离子体密度控制 |
WO2019022707A1 (en) * | 2017-07-24 | 2019-01-31 | Lam Research Corporation | MOBILE RIBBON DESIGNS |
JP7105666B2 (ja) * | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11551965B2 (en) | 2018-12-07 | 2023-01-10 | Applied Materials, Inc. | Apparatus to reduce polymers deposition |
JP6960390B2 (ja) * | 2018-12-14 | 2021-11-05 | 東京エレクトロン株式会社 | 給電構造及びプラズマ処理装置 |
JP7465733B2 (ja) * | 2019-09-26 | 2024-04-11 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
KR102175990B1 (ko) * | 2020-01-09 | 2020-11-09 | 하나머티리얼즈(주) | 포커스링 및 그를 포함하는 플라즈마 장치 |
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2016
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CN106057616B (zh) | 2021-08-17 |
WO2016167852A1 (en) | 2016-10-20 |
JP6810695B2 (ja) | 2021-01-06 |
CN106057616A (zh) | 2016-10-26 |
US20160307742A1 (en) | 2016-10-20 |
US10903055B2 (en) | 2021-01-26 |
TWI686861B (zh) | 2020-03-01 |
KR102501702B1 (ko) | 2023-02-17 |
TWM534894U (zh) | 2017-01-01 |
KR20170137800A (ko) | 2017-12-13 |
TW201715605A (zh) | 2017-05-01 |
CN205984889U (zh) | 2017-02-22 |
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