JP6810695B2 - 面取り部のポリマー低減のためのエッジリング - Google Patents
面取り部のポリマー低減のためのエッジリング Download PDFInfo
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- JP6810695B2 JP6810695B2 JP2017541637A JP2017541637A JP6810695B2 JP 6810695 B2 JP6810695 B2 JP 6810695B2 JP 2017541637 A JP2017541637 A JP 2017541637A JP 2017541637 A JP2017541637 A JP 2017541637A JP 6810695 B2 JP6810695 B2 JP 6810695B2
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- 229920000642 polymer Polymers 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 96
- 238000012545 processing Methods 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 description 16
- 238000011109 contamination Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000006854 communication Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007175 bidirectional communication Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本開示の実施形態は、概して、半導体処理システムに関する。より具体的には、本開示の実施形態は、半導体製造における基板の面取り部又は裏面からポリマーを低減するために利用される半導体処理システムに使用されるエッジリングに関する。
集積回路は、単一のチップ上に何百万ものコンポーネント(例えば、トランジスタ、コンデンサ、及び抵抗器)を含むことができる複雑なデバイスに発展してきた。チップ設計の進化には、より高速な回路とより大きな回路密度が絶えず求められている。より大きな回路密度に対する要求は、集積回路コンポーネントの寸法の低減を必要とする。
Claims (11)
- 一体の本体で形成されたベース円形リングであって、ベース円形リング上に形成された中心開口を画定する内面と、ベース円形リングの周囲を画定する外面とを有し、第1の上面を有する上部本体と、上部本体に接続された下部とを含むベース円形リングと、
ベース円形リングの下部に形成された凹部と、
ベース円形リングの下部に形成され、凹部によって分割された第1の下部及び第2の下部であって、互いの深さが一致していない第1の下部及び第2の下部と、
ベース円形リングの内面の一部に沿って形成された段差部であって、
段差部は、第1の上面と平行に形成された第2の上面と、傾斜面とを有し、
傾斜面は、段差部の側壁と、上部本体の第1の上面に接続されている傾斜面の第1の端と、第2の上面に接続されている傾斜面の第2の端とを画定し、
第2の上面及び関連する基板支持アセンブリの側壁は、上部本体の第1の上面の上方にポケットを画定するように構成され、
傾斜面は、第1の上面より上へ上がっている段差部と、
ベース円形リングの第1の上面上に形成され、そこから上へ延在している複数の隆起構造であって、複数の隆起構造の各隆起構造は、上面を有し、実質的に平面であり、上にあるシャドーリングと係合してこれを持ち上げ、シャドーリングがベース円形リングの上面に直接接触するのを防ぐように構成されている隆起構造とを含むエッジリング。 - 複数の隆起構造は、プラズマ処理チャンバ内に実装されたときに、基板と係合するように構成されたベース円形リングの内面に接続された第1の端部を有する、請求項1記載のエッジリング。
- 隆起構造は、ベース円形リングの第1の上面の幅に実質的に一致する長さを有する、請求項1記載のエッジリング。
- 複数の隆起構造は、プラズマ処理チャンバ内に実装されたときに、その上面を通ってシャドーリングと係合するように構成される、請求項1記載のエッジリング。
- ベース円形リングは、Al2O3、AlN、Y2O3、Si又はSiC、石英、イットリウム含有材料、及び陽極酸化Al2O3 から製造される、請求項1記載のエッジリング。
- ベース円形リングの内面に形成された段差部は、プラズマ処理チャンバ内に実装されたときに、基板支持アセンブリの側壁の大部分を実質的に覆うように構成される、請求項1記載のエッジリング。
- ベース円形リングの内面に形成された段差部は、プラズマ処理チャンバ内に実装された場合に、基板支持アセンブリの側壁の第2の部分を露出させる段差部の上方に空間を残しつつ、基板支持アセンブリの側壁の第1の部分を実質的に覆うように構成される、請求項1記載のエッジリング。
- 段差部の前記第2の上面は、プラズマ処理チャンバ内に実装されたときに、基板の裏面又は面取り部と係合するように構成される、請求項1記載のエッジリング。
- 第1の下部は、第2の下部の第2の深さよりも約10%〜約50%長い第1の深さを有する、請求項1記載のエッジリング。
- ポケットは、ベース円形リングの第1の上面と段差部の第2の上面との間に画定された約1mm〜約5mmの段差高さを有する、請求項1記載のエッジリング。
- 隆起構造の上面は、シャドーリングの底部と平行になるように構成された平面である、請求項4記載のエッジリング。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/690,121 US10903055B2 (en) | 2015-04-17 | 2015-04-17 | Edge ring for bevel polymer reduction |
US14/690,121 | 2015-04-17 | ||
PCT/US2016/013390 WO2016167852A1 (en) | 2015-04-17 | 2016-01-14 | Edge ring for bevel polymer reduction |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018516449A JP2018516449A (ja) | 2018-06-21 |
JP6810695B2 true JP6810695B2 (ja) | 2021-01-06 |
Family
ID=57126737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017541637A Active JP6810695B2 (ja) | 2015-04-17 | 2016-01-14 | 面取り部のポリマー低減のためのエッジリング |
Country Status (6)
Country | Link |
---|---|
US (1) | US10903055B2 (ja) |
JP (1) | JP6810695B2 (ja) |
KR (1) | KR102501702B1 (ja) |
CN (2) | CN106057616B (ja) |
TW (2) | TWI686861B (ja) |
WO (1) | WO2016167852A1 (ja) |
Families Citing this family (9)
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US10903055B2 (en) * | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
CN108231525B (zh) * | 2016-12-14 | 2020-03-31 | 北京北方华创微电子装备有限公司 | 一种腔室和半导体设备 |
JP2020516770A (ja) * | 2017-04-07 | 2020-06-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板端部上のプラズマ密度制御 |
KR102401704B1 (ko) * | 2017-07-24 | 2022-05-24 | 램 리써치 코포레이션 | 이동가능한 에지 링 설계들 |
JP7105666B2 (ja) * | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11551965B2 (en) | 2018-12-07 | 2023-01-10 | Applied Materials, Inc. | Apparatus to reduce polymers deposition |
JP6960390B2 (ja) * | 2018-12-14 | 2021-11-05 | 東京エレクトロン株式会社 | 給電構造及びプラズマ処理装置 |
JP7465733B2 (ja) * | 2019-09-26 | 2024-04-11 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
KR102175990B1 (ko) * | 2020-01-09 | 2020-11-09 | 하나머티리얼즈(주) | 포커스링 및 그를 포함하는 플라즈마 장치 |
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-
2015
- 2015-04-17 US US14/690,121 patent/US10903055B2/en active Active
-
2016
- 2016-01-14 JP JP2017541637A patent/JP6810695B2/ja active Active
- 2016-01-14 WO PCT/US2016/013390 patent/WO2016167852A1/en active Application Filing
- 2016-01-14 KR KR1020177031678A patent/KR102501702B1/ko active IP Right Grant
- 2016-04-07 TW TW105110920A patent/TWI686861B/zh active
- 2016-04-07 TW TW105204765U patent/TWM534894U/zh unknown
- 2016-04-15 CN CN201610236298.5A patent/CN106057616B/zh active Active
- 2016-04-15 CN CN201620320137.XU patent/CN205984889U/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20160307742A1 (en) | 2016-10-20 |
CN106057616B (zh) | 2021-08-17 |
KR20170137800A (ko) | 2017-12-13 |
KR102501702B1 (ko) | 2023-02-17 |
WO2016167852A1 (en) | 2016-10-20 |
US10903055B2 (en) | 2021-01-26 |
TWI686861B (zh) | 2020-03-01 |
TW201715605A (zh) | 2017-05-01 |
JP2018516449A (ja) | 2018-06-21 |
CN205984889U (zh) | 2017-02-22 |
TWM534894U (zh) | 2017-01-01 |
CN106057616A (zh) | 2016-10-26 |
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