JP5808750B2 - 傾斜側壁を備える静電チャック - Google Patents
傾斜側壁を備える静電チャック Download PDFInfo
- Publication number
- JP5808750B2 JP5808750B2 JP2012541061A JP2012541061A JP5808750B2 JP 5808750 B2 JP5808750 B2 JP 5808750B2 JP 2012541061 A JP2012541061 A JP 2012541061A JP 2012541061 A JP2012541061 A JP 2012541061A JP 5808750 B2 JP5808750 B2 JP 5808750B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate support
- substrate
- edge ring
- side wall
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 118
- 238000012545 processing Methods 0.000 claims description 27
- 239000006227 byproduct Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 13
- 239000001307 helium Substances 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 230000001154 acute effect Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
本出願は、「傾斜側壁を備える静電チャック(AN ELECTROSTATIC CHUCK WITH AN ANGLED SIDEWALL)」の名称で2009年11月30日に出願された米国仮特許出願No.61/265,200に対して35U.S.C.119条に基づく優先権を主張するものであり、前記出願の内容は、参照することにより、その全体が本明細書に組み込まれる。
本発明は、たとえば、以下のような態様で実現することもできる。
適用例1:
基板をエッチングするように構成されるプラズマ処理チャンバにおいて前記基板を支持する基板支持体であって、
上部基板支持面の外周の外側に前記基板が伸長するようにプラズマ処理の際に前記基板を支持する大きさに形成される上部基板支持面と、
前記上部基板支持面の外周から外側及び下側に伸長する傾斜側壁であって、前記基板支持体を囲むエッジリングの上面で、前記基板の外周部の下面に対向する前記エッジリングの上面と実質的に同一平面になるような外周を持つように構成される傾斜側壁と、を備え、
プラズマ処理の際に、前記傾斜側壁に副生成物堆積物が蓄積される、基板支持体。
適用例2:
適用例1の基板支持体であって、
前記傾斜側壁と前記上部基板支持面との間の鋭角が35度〜75度である、基板支持体。
適用例3:
適用例1の基板支持体であって、
前記傾斜側壁と前記上部基板支持面との間の鋭角が45度〜60度である、基板支持体。
適用例4:
適用例1の基板支持体であって、
前記傾斜側壁の幅が0.0127〜0.1016cmである、基板支持体。
適用例5:
適用例1の基板支持体であって、
前記傾斜側壁の幅が0.0254〜0.0762cmである、基板支持体。
適用例6:
適用例1の基板支持体であって、さらに、
前記基板を静電的に固定するように構成される埋め込み電極と、
前記上部基板支持面に形成される少なくとも一つの溝、メサ、開口部又は凹部領域であって、ヘリウムガス源と流体連結され、プラズマ処理の際に前記上部基板支持面と前記基板との間の熱移動を可能にするように構成される少なくとも一つの溝、メサ、開口部又は凹部領域と、を備える基板支持体。
適用例7:
適用例1の基板支持体であって、
前記基板支持体から張り出す前記基板の外周部の幅が1〜3mmとなるような大きさに形成される、基板支持体。
適用例8:
プラズマ処理チャンバ内に配置される下部電極アセンブリであって、プラズマ処理の際に基板を支持するように構成され、適用例1の基板支持体と、前記基板支持体を囲むエッジリングと、を備える下部電極アセンブリであって、
前記基板の外周部が、前記基板支持体から張り出して、前記エッジリングの上面にあり、
前記エッジリングの上面が、前記基板支持体の前記傾斜側壁の外周と実質的に同一平面上にある、下部電極アセンブリ。
適用例9:
適用例1の基板支持体の前記傾斜側壁上の副生成物堆積物を除去する方法であって、
基板が載置されていない状態で前記基板支持体上にプラズマを発生させ、
前記プラズマを用いて、前記副生成物堆積物のボンバードを行なう、方法。
Claims (9)
- 基板をエッチングするように構成されるプラズマ処理チャンバにおいて前記基板を支持する基板支持体であって、
上部基板支持面の外周の外側に前記基板が伸長するようにプラズマ処理の際に前記基板を支持する大きさに形成される上部基板支持面と、
前記上部基板支持面の外周から外側及び下側に伸長する傾斜側壁であって、前記基板支持体を囲むエッジリングの上面で、前記基板の外周部の下面に対向する前記エッジリングの上面と実質的に同一平面になるような外周を持つように構成される傾斜側壁と、を備え、
前記エッジリングと組み合わされた際に、前記エッジリングと前記基板との間において前記傾斜側壁のみが露出するように構成され、
プラズマ処理の際に、前記傾斜側壁に副生成物堆積物が蓄積される、基板支持体。 - 請求項1に記載の基板支持体であって、
前記傾斜側壁と前記上部基板支持面との間の鋭角が35度〜75度である、基板支持体。 - 請求項1に記載の基板支持体であって、
前記傾斜側壁と前記上部基板支持面との間の鋭角が45度〜60度である、基板支持体。 - 請求項1に記載の基板支持体であって、
前記傾斜側壁の幅が0.0127〜0.1016cmである、基板支持体。 - 請求項1に記載の基板支持体であって、
前記傾斜側壁の幅が0.0254〜0.0762cmである、基板支持体。 - 請求項1に記載の基板支持体であって、さらに、
前記基板を静電的に固定するように構成される埋め込み電極と、
前記上部基板支持面に形成される少なくとも一つの溝、メサ、開口部又は凹部領域であって、ヘリウムガス源と流体連結され、プラズマ処理の際に前記上部基板支持面と前記基板との間の熱移動を可能にするように構成される少なくとも一つの溝、メサ、開口部又は凹部領域と、を備える基板支持体。 - 請求項1に記載の基板支持体であって、
前記基板支持体から張り出す前記基板の外周部の幅が1〜3mmとなるような大きさに形成される、基板支持体。 - プラズマ処理チャンバ内に配置される下部電極アセンブリであって、プラズマ処理の際に基板を支持するように構成され、請求項1に記載の基板支持体と、前記基板支持体を囲むエッジリングと、を備える下部電極アセンブリであって、
前記基板の外周部が、前記基板支持体から張り出して、前記エッジリングの上面にあり、
前記エッジリングの上面が、前記基板支持体の前記傾斜側壁の外周と実質的に同一平面上にある、下部電極アセンブリ。 - 請求項1に記載の基板支持体の前記傾斜側壁上の副生成物堆積物を除去する方法であって、
基板が載置されていない状態で前記基板支持体上にプラズマを発生させ、
前記プラズマを用いて、前記副生成物堆積物のボンバードを行なう、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26520009P | 2009-11-30 | 2009-11-30 | |
US61/265,200 | 2009-11-30 | ||
PCT/US2010/003013 WO2011065965A2 (en) | 2009-11-30 | 2010-11-22 | An electrostatic chuck with an angled sidewall |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013512564A JP2013512564A (ja) | 2013-04-11 |
JP5808750B2 true JP5808750B2 (ja) | 2015-11-10 |
Family
ID=44067154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012541061A Expired - Fee Related JP5808750B2 (ja) | 2009-11-30 | 2010-11-22 | 傾斜側壁を備える静電チャック |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110126852A1 (ja) |
JP (1) | JP5808750B2 (ja) |
KR (1) | KR20120116923A (ja) |
CN (1) | CN102666917A (ja) |
SG (1) | SG10201407637TA (ja) |
TW (2) | TW201622061A (ja) |
WO (1) | WO2011065965A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10655224B2 (en) * | 2016-12-20 | 2020-05-19 | Lam Research Corporation | Conical wafer centering and holding device for semiconductor processing |
WO2021021531A1 (en) | 2019-08-01 | 2021-02-04 | Lam Research Corporation | Systems and methods for cleaning an edge ring pocket |
JP7229904B2 (ja) * | 2019-11-29 | 2023-02-28 | 東京エレクトロン株式会社 | プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置 |
JP7270863B1 (ja) | 2019-11-29 | 2023-05-10 | 東京エレクトロン株式会社 | プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置 |
JP7537843B2 (ja) | 2020-10-09 | 2024-08-21 | 東京エレクトロン株式会社 | クリーニング方法及び基板処理装置 |
JP7248167B1 (ja) | 2022-03-03 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
JP7203260B1 (ja) | 2022-03-30 | 2023-01-12 | 住友大阪セメント株式会社 | 静電チャック部材、静電チャック装置及び静電チャック部材の製造方法 |
JP7248182B1 (ja) | 2022-08-30 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
JP7529008B2 (ja) | 2022-12-23 | 2024-08-06 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
JP2024090654A (ja) * | 2022-12-23 | 2024-07-04 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5200232A (en) * | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
US5275683A (en) * | 1991-10-24 | 1994-01-04 | Tokyo Electron Limited | Mount for supporting substrates and plasma processing apparatus using the same |
JP3173693B2 (ja) * | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
US5886863A (en) * | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
US6140612A (en) * | 1995-06-07 | 2000-10-31 | Lam Research Corporation | Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck |
US5824605A (en) * | 1995-07-31 | 1998-10-20 | Lam Research Corporation | Gas dispersion window for plasma apparatus and method of use thereof |
US5805408A (en) * | 1995-12-22 | 1998-09-08 | Lam Research Corporation | Electrostatic clamp with lip seal for clamping substrates |
KR0183823B1 (ko) * | 1996-02-22 | 1999-04-15 | 김광호 | 웨이퍼 로딩용 스테이지를 갖춘 반도체 제조 장치 |
US5820723A (en) * | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
JPH11121600A (ja) * | 1997-10-20 | 1999-04-30 | Tokyo Electron Ltd | 処理装置 |
US6073576A (en) * | 1997-11-25 | 2000-06-13 | Cvc Products, Inc. | Substrate edge seal and clamp for low-pressure processing equipment |
US6039836A (en) * | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
US5969934A (en) * | 1998-04-10 | 1999-10-19 | Varian Semiconductor Equipment Associats, Inc. | Electrostatic wafer clamp having low particulate contamination of wafers |
US6077353A (en) * | 1998-06-02 | 2000-06-20 | Applied Materials, Inc. | Pedestal insulator for a pre-clean chamber |
US6013984A (en) * | 1998-06-10 | 2000-01-11 | Lam Research Corporation | Ion energy attenuation method by determining the required number of ion collisions |
US5998932A (en) * | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
KR20010089376A (ko) * | 1998-10-29 | 2001-10-06 | 조셉 제이. 스위니 | 전력을 반도체 웨이퍼 프로세싱 시스템내의 제품을 통하여연결하기 위한 장치 |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
EP1194954B1 (en) * | 1999-07-08 | 2011-05-18 | Lam Research Corporation | Electrostatic chuck and its manufacturing method |
WO2001041508A1 (fr) * | 1999-11-30 | 2001-06-07 | Ibiden Co., Ltd. | Appareil chauffant en ceramique |
US6383931B1 (en) * | 2000-02-11 | 2002-05-07 | Lam Research Corporation | Convertible hot edge ring to improve low-K dielectric etch |
JP4592916B2 (ja) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
US6333272B1 (en) * | 2000-10-06 | 2001-12-25 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US6797639B2 (en) * | 2000-11-01 | 2004-09-28 | Applied Materials Inc. | Dielectric etch chamber with expanded process window |
JP3505155B2 (ja) * | 2001-02-13 | 2004-03-08 | 株式会社日立製作所 | ウエハ保持装置 |
US7161121B1 (en) * | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
US6669783B2 (en) * | 2001-06-28 | 2003-12-30 | Lam Research Corporation | High temperature electrostatic chuck |
US6483690B1 (en) * | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
US20040069227A1 (en) * | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US20050051098A1 (en) * | 2003-09-05 | 2005-03-10 | Tooru Aramaki | Plasma processing apparatus |
JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US7431788B2 (en) * | 2005-07-19 | 2008-10-07 | Lam Research Corporation | Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system |
US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
US7651585B2 (en) * | 2005-09-26 | 2010-01-26 | Lam Research Corporation | Apparatus for the removal of an edge polymer from a substrate and methods therefor |
KR101153118B1 (ko) * | 2005-10-12 | 2012-06-07 | 파나소닉 주식회사 | 플라즈마 처리장치 및 플라즈마 처리방법 |
US7501605B2 (en) * | 2006-08-29 | 2009-03-10 | Lam Research Corporation | Method of tuning thermal conductivity of electrostatic chuck support assembly |
JP2008103403A (ja) * | 2006-10-17 | 2008-05-01 | Tokyo Electron Ltd | 基板載置台及びプラズマ処理装置 |
JP5260023B2 (ja) * | 2007-10-19 | 2013-08-14 | 三菱重工業株式会社 | プラズマ成膜装置 |
JP5302814B2 (ja) * | 2009-07-29 | 2013-10-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
-
2010
- 2010-11-22 KR KR1020127013689A patent/KR20120116923A/ko not_active Application Discontinuation
- 2010-11-22 SG SG10201407637TA patent/SG10201407637TA/en unknown
- 2010-11-22 CN CN2010800539426A patent/CN102666917A/zh active Pending
- 2010-11-22 WO PCT/US2010/003013 patent/WO2011065965A2/en active Application Filing
- 2010-11-22 JP JP2012541061A patent/JP5808750B2/ja not_active Expired - Fee Related
- 2010-11-26 TW TW105108050A patent/TW201622061A/zh unknown
- 2010-11-26 TW TW099141043A patent/TWI538091B/zh not_active IP Right Cessation
- 2010-11-30 US US12/956,727 patent/US20110126852A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2013512564A (ja) | 2013-04-11 |
CN102666917A (zh) | 2012-09-12 |
WO2011065965A2 (en) | 2011-06-03 |
KR20120116923A (ko) | 2012-10-23 |
TW201125068A (en) | 2011-07-16 |
WO2011065965A3 (en) | 2011-09-09 |
SG10201407637TA (en) | 2015-01-29 |
US20110126852A1 (en) | 2011-06-02 |
TWI538091B (zh) | 2016-06-11 |
TW201622061A (zh) | 2016-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5808750B2 (ja) | 傾斜側壁を備える静電チャック | |
US11387081B2 (en) | Wafer chuck and processing arrangement | |
JP6306861B2 (ja) | プラズマチャンバーにおいて半導体ワークピースを取り巻く導電性カラー | |
JP7562604B2 (ja) | ユニバーサルプロセスキット | |
JP6867159B2 (ja) | 縁部クリティカルディメンジョンの均一性制御用のプロセスキット | |
TWI443738B (zh) | 環形擋板 | |
KR20210156884A (ko) | 인 시튜 챔버 세정 능력을 갖는 물리 기상 증착(pvd) 챔버 | |
US20060118044A1 (en) | Capacitive coupling plasma processing apparatus | |
US8420547B2 (en) | Plasma processing method | |
KR20110005665U (ko) | 플라즈마 에칭 챔버용 에지 링 어셈블리 | |
JP2008103403A (ja) | 基板載置台及びプラズマ処理装置 | |
TWM492915U (zh) | 在icp電漿處理腔室中用於高產出、基板極端邊緣缺陷減少之單環設計 | |
US8342121B2 (en) | Plasma processing apparatus | |
TW202224067A (zh) | 經由邊緣夾鉗的薄型基板運送 | |
US8141514B2 (en) | Plasma processing apparatus, plasma processing method, and storage medium | |
US11398397B2 (en) | Electrostatic chuck and plasma processing apparatus including the same | |
KR20230122016A (ko) | 에지 클램핑을 통한 얇은 기판 처리를 위한 증착 링 | |
JP7427108B2 (ja) | プラズマチャンバ内で使用するための低抵抗閉じ込めライナ | |
TW202223971A (zh) | 設備及方法 | |
TW202433542A (zh) | 用於穩定帶框基板處理的金屬屏蔽 | |
KR20060134675A (ko) | 건식 식각 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131120 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140911 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141007 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150811 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150909 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5808750 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |