TWI538091B - 具有傾斜之側邊的靜電夾盤 - Google Patents

具有傾斜之側邊的靜電夾盤 Download PDF

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TWI538091B
TWI538091B TW099141043A TW99141043A TWI538091B TW I538091 B TWI538091 B TW I538091B TW 099141043 A TW099141043 A TW 099141043A TW 99141043 A TW99141043 A TW 99141043A TW I538091 B TWI538091 B TW I538091B
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substrate
substrate holder
edge ring
holder
plasma processing
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羅金德 漢沙
普瑞提克 曼基迪
克利斯 肯伯
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蘭姆研究公司
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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Description

具有傾斜之側邊的靜電夾盤
本發明係關於具有傾斜側邊的靜電夾盤。
本申請案主張美國臨時專利申請案第61/265,200號之優先權，該案「具有傾斜之側邊的靜電夾盤」(AN ELECTROSTATIC CHUCK WITH AN ANGLED SIDEWALL)係於2009年11月30日提出申請，該優先權案全部內容併入本申請案以供參考。
隨著各個相繼推出的半導體技術世代，晶圓直徑趨於增加而電晶體尺寸趨向縮小，造成對於晶圓處理的精確度與可重複性的要求更高。半導體基板材料(如矽晶圓)是由包括使用真空腔等等技術來處理。此等技術包括無電漿應用方法，例如電子束蒸鍍，以及電漿應用方法，例如濺鍍沉積、電漿輔助化學氣相沉積(PECVD,plasma-enhanced chemical vapor deposition)、抗蝕層剝除、以及電漿蝕刻。
示範性電漿處理腔室係描述於共同擁有之美國專利第4,340,462、4,948,458、5,200,232、6,090,304與5,820,723號中，茲併入以供參考。電漿處理腔室可包含上電極組合件與下電極組合件。示範性上電極組合件之細節係揭露於美國專利第6,333,272、6,230,651、6,013,155與5,824,605,號中，茲併入以供參考。在上電極組合件正下方的是下電極組合件，其可包含支撐處理中基板的靜電夾盤(ESC,electrostatic chuck)。示範性ESC係描述於共同擁有的美國專利第7,161,121、6,669,783與6,483,690號中，茲併入以供參考。ESC在其上表面上可具有和氦氣源流體連通的微通道。可在處理期間使用氦氣來冷卻基板。一種藉由加壓氣體來控制基板溫度的方法係揭露於共同擁有的美國專利第6,140,612號中，茲併入以供參考。下電極組合件可更包含裝在基板周圍的邊緣環。示範性邊緣環係描述於美國專利申請公開案第2009/0186487號以及美國專利第5,805,408、5,998,932、6,013,984、6,039,836與6,383,931號中，茲併入以供參考。
在典型的電漿處理腔室中，靠近基板邊緣的電漿密度較低，可導致副產物層(如聚合物、多晶矽、氮化物、金屬等等)聚積在基板邊緣的頂部與底部表面以及鄰近的腔室組件表面上。聚積過量副產物可導致電漿處理上的許多問題，例如微粒汙染、不可靠的基板夾持、冷卻氦氣洩漏、降低的效率與減少的元件良率。因而高度期望能移除副產物。可藉由使用電漿斜角蝕刻器來移除基板邊緣上的副產物層。示範性電漿斜角蝕刻器係描述於共同擁有的美國專利申請公開案第2008/0227301號中，茲併入以供參考。腔室組件上的副產物層較難移除部份是由於其複雜的形狀。典型的電漿處理腔室可執行腔室清洗製程，在基板不存在時，使用電漿來蝕刻腔室組件的副產物層。
本文描述一基板支架，用以支撐電漿處理腔室中的基板，該基板支架包含一上基板支撐表面，其尺寸被製作成在電漿處理期間，以該基板朝該上基板支撐表面的外部周邊之外延伸的方式來支撐該基板，以及一傾斜側邊，其從該上基板支撐表面的外部周邊向外與向下延伸，該傾斜側邊係配置成具有一外部周邊，其和圍繞該基板支架的一邊緣環之上表面實質上共面，該邊緣環的上表面至少有部分在該基板的周邊部分之下，其中在電漿處理期間，該傾斜側邊聚積副產物沉積物。
圖1呈現先前技術中的下電極組合件之示意橫剖面圖。圖2呈現圖1中細節A的放大視圖。ESC 20的支撐表面21支撐基板10。為了要在基板之下引入如氦氣的熱傳氣體，ESC 20可包括和氦氣源(未呈現)流體連通之溝槽、台面、開口、或凹陷區23的圖形。ESC特徵的細節係揭露於共同擁有的美國專利第7501605號中。電極25係嵌在ESC 20中，用以在處理期間以靜電夾持基板10。ESC 20具有垂直側邊22，且其尺寸可造成在處理期間，基板10的周邊部分懸在ESC 20之上並位於圍繞ESC 20的邊緣環30的上表面31之上，且在上表面31和基板10之間具有空隙60。支撐構件40支撐ESC 20且支撐構件50支撐邊緣環30。
在處理期間，副產物沉積物100可聚積在垂直側邊22暴露於空隙60中的一部分上。垂直側邊22上的過量副產物可造成He從溝槽、台面、開口或凹陷區23的圖形中洩漏，並影響基板10的靜電夾持。藉由具有較大的基板懸伸部分並精確控制空隙60的尺寸就可使副產物沉積物100最少。然而，在現今的半導體製造慣例中，為了使基板的元件良率最大，基板懸伸的寬度可小至1mm。以1mm的微小寬度來懸伸基板可導致副產物以高於預期的速率聚積在垂直側邊22上。
如圖3所示，可在ESC 20上沒有基板時，藉由執行在電漿處理腔室中產生電漿之腔室清洗製程來移除副產物沉積物100。電漿中之離子200藉由ESC 20上的電場垂直加速，並濺鍍以及/或是化學蝕刻副產物沉積物100。圖4A為示意圖，呈現濺鍍效率(由一個進入離子所移除的平均原子數量來測量)為離子入射角的函數。入射的角度或入射角為離子入射至表面的射線和垂直於入設點表面的直線之間的角度。圖4B為示意圖，代表副產物沉積物100所接收的相對離子通量為離子入射角的函數。較高的離子通量造成較高的化學蝕刻效率。因為垂直側邊22實質上和離子200的入射方向平行，所以入射的角度約為90°，在該角度時濺鍍效率與化學蝕刻效率二者皆非常低。無法移除所有的副產物沉積物100除了會導致由He洩漏引起的不均勻基板溫度與不可靠的夾持之外，還可導致電弧、ESC損害、頻繁的腔室清洗、以及電漿處理腔室降低的效率。
本文描述具有傾斜側邊的ESC，用以在腔室清洗製程期間加強濺鍍效率。
圖5呈現一實施例。ESC 520包含支撐表面521，以及從支撐表面521的外部周邊向外與向下延伸的傾斜表面522。傾斜表面522的寬度足以僅讓傾斜表面522暴露在邊緣環30與基板10之間 的空隙60中，即邊緣環30的上表面31實質上和傾斜表面522的外部周邊522a共面。位於上表面31之上之基板10的周邊部分最好為1至3mm寬。ESC 520可包含其他習知特徵，例如在其上表面上用以發送He氣的溝槽、台面、開口、或凹陷區之圖形，以及在處理期間以靜電夾持基板10的嵌入式電極。
因為ESC 520係配置成僅有傾斜表面522會在電漿處理基板期間暴露，所以副產物沉積物400僅產生在傾斜表面522上。在如圖6所示的腔室清洗製程中，離子200的入射角度約為傾斜表面522與支撐表面521之間的銳角，實質上小於在垂直側邊狀況中接近90°的入射角度。傾斜表面522與支撐表面521之間的銳角最好為35°至75°，若為45°至60°則更佳。傾斜表面522最好為0.005至0.04英吋寬，若為0.01至0.03英吋則更佳。
雖然已參照特定實施例詳細描述具有傾斜側邊的ESC，但熟習本技術者當可明白在不偏離隨附申請專利範圍的範疇下，仍可達成各式變化與修正，並可使用均等者。舉例而言，傾斜側邊可併入至其他受副產物沉積所擾的腔室組件中，例如其他類型的基板支架(如真空吸盤)、邊緣環、聯結環等等。
10‧‧‧基板
20‧‧‧靜電吸盤(ESC)
21‧‧‧支撐表面
22‧‧‧垂直側邊
23‧‧‧凹陷區
25‧‧‧電極
30‧‧‧邊緣環
31‧‧‧上表面
40、50‧‧‧支撐構件
60‧‧‧空隙
100‧‧‧副產物沉積物
200‧‧‧離子
400‧‧‧副產物沉積物
520‧‧‧靜電吸盤(ESC)
521‧‧‧支撐表面
522‧‧‧傾斜表面
522a‧‧‧傾斜表面的外部周邊
圖1呈現先前技術中的下電極組合件之橫剖面示意圖。
圖2呈現圖1中A部分的放大視圖。
圖3呈現在腔室清洗製程期間之圖1中A部分的放大視圖。
圖4A為示意圖，呈現電漿暴露表面的濺渡效率為離子入射角的函數。
圖4B為示意圖，呈現電漿暴露表面所接收的相對離子通量為離子入射角的函數。
圖5呈現下電極組合件的橫剖面示意圖，該下電極組合件在鄰近懸伸的基板處包含具有傾斜側邊的靜電夾盤。
圖6呈現在腔室清洗製程期間的下電極組合件，其包含具有傾斜側邊的靜電夾盤。
10‧‧‧基板
30‧‧‧邊緣環
31‧‧‧上表面
60‧‧‧空隙
400‧‧‧副產物沉積物
520‧‧‧靜電吸盤(ESC)
521‧‧‧支撐表面
522‧‧‧傾斜表面
522a‧‧‧傾斜表面的外部周邊

Claims (8)

  1. 一種基板支架，用以在配置來蝕刻基板的電漿處理腔室中支撐基板，該基板支架包含：一上基板支撐表面，其尺寸被製作成在電漿處理期間，以該基板朝該上基板支撐表面的外部周邊之外延伸的方式來支撐該基板，以及一傾斜側邊，其從該上基板支撐表面的外部周邊向外與向下延伸，該傾斜側邊係配置成具有一下部邊緣，其和圍繞該基板支架的一邊緣環之上表面實質上共面，該邊緣環的上表面面對該基板的周邊部分之下表面，其中在電漿處理期間，該傾斜側邊聚積副產物沉積物；其中該傾斜側邊係配置成該基板支架在處理期間於該邊緣環及該基板之該下表面之間的空隙中的唯一暴露表面；其中該傾斜側邊為0.005至0.04英吋寬，且該傾斜側邊之寬度係配置成小於該基板之該周邊部份的寬度，當該基板在處理期間受支撐於該上基板支撐表面時，該基板之該周邊部份係配置成位在該邊緣環的該上表面之上。
  2. 如申請專利範圍第1項所述之基板支架，其中在該傾斜側邊與該上基板支撐表面之間的銳角為35°至75°。
  3. 如申請專利範圍第1項所述之基板支架，其中在該傾斜側邊與該上基板支撐表面之間的銳角為45°至60°。
  4. 如申請專利範圍第1項所述之基板支架，其中該傾斜側邊為0.01至0.03英吋寬。
  5. 如申請專利範圍第1項所述之基板支架，更包含：一嵌入電極，其配置以靜電夾持該基板；在該上基板支撐表面中至少有一溝槽、台面、開口或凹陷區， 該溝槽、台面、開口或凹陷區係和一氦氣源流體連通，且配置以於電漿處理期間影響該上基板支撐表面與該基板之間的熱傳。
  6. 如申請專利範圍第1項所述之基板支架，其中該基板支架的尺寸會使懸在該基板支架之上的該基板之周邊部分為1至3mm寬。
  7. 一種在一電漿處理腔室中的下電極組合件，其配置來在電漿處理期間支撐一基板，該下電極組合件包含如申請專利範圍第1項所述之基板支架，以及圍繞該基板支架的一邊緣環，其中：該基板的周邊部分懸在該基板支架之上並位於該邊緣環的上表面之上；該邊緣環的上表面實質上和該基板支架的該傾斜側邊的外部周邊共面。
  8. 一種移除副產物沉積物的方法，該副產物沉積物係在如申請專利範圍第1項所述之基板支架的該傾斜側邊上，該方法包含：當基板不在該基板支架上時，在該基板支架之上產生電漿；以該電漿轟擊該副產物沉積物。
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