TW202224067A - 經由邊緣夾鉗的薄型基板運送 - Google Patents
經由邊緣夾鉗的薄型基板運送 Download PDFInfo
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Abstract
本文提供了在處理腔室中使用的處理套組的實施例。在一些實施例中,一種用於處理腔室的蓋環包括:環形主體,包括上表面及下表面;內唇部,從環形主體徑向向內且向下延伸;及複數個突起,從內唇部向下延伸並且沿著內唇部以規則間隔安置,其中複數個突起的最下表面共同界定平面基板接觸表面。
Description
本揭示案之實施例通常係關於基板處理設備,並且更特定言之,係關於用於基板處理設備的處理套組。
用於處理半導體基板的沉積腔室典型地包括支撐基板的基板支撐件。使用電漿的沉積腔室典型地包括安置在基板支撐件周圍的處理套組,用於保護腔室壁免受非所要的沉積並且以限制電漿。處理套組通常包括製程屏蔽件、蓋環、沉積環等。通常,基板可經由靜電夾持、真空夾持、重力固持至基板支撐件上。然而,發明者已觀察到,基板(特別是當很薄(亦即,小於約800微米)時)可能會彎曲,導致製程不均勻。在該等情況下,基板典型地接合至載體板。然而,由於額外的接合及剝離步驟,接合基板會增加額外的處理時間,並且接合基板需要額外的工具。
因此,發明者已提供用於平坦化基板的改良裝置及方法。
本文提供了在處理腔室中使用的處理套組的實施例。在一些實施例中,一種用於處理腔室的蓋環包括:環形主體,包括上表面及下表面;內唇部,從環形主體徑向向內且向下延伸;及複數個突起,從內唇部向下延伸並且沿著內唇部以規則間隔安置,其中複數個突起的最下表面共同界定平面基板接觸表面。
在一些實施例中,一種用於運送基板的處理腔室,包括:腔室主體,在該腔室主體中界定一內部容積;基板支撐件,安置在該內部容積中,用於在該基板支撐件上支撐基板;及蓋環,用於將基板的外緣夾持至基板支撐件,其中該蓋環包括複數個突起,該複數個突起從蓋環的內唇部向下且徑向向內延伸並且沿著內唇部以規則間隔安置。
在一些實施例中,一種在處理腔室中平坦化基板的方法包括:將基板置放在基板支撐件上;並且升高基板支撐件以將基板的外緣抵靠蓋環夾持,其中該蓋環具有:環形主體;內唇部,從環形主體徑向向內且向下延伸;及複數個突起,從內唇部向下且徑向向內延伸並且沿著內唇部以規則間隔安置,並且其中基板抵靠複數個突起而夾緊。
本揭示案之其他及進一步實施例描述如下。
本文提供了在處理腔室中使用的處理套組的實施例。本發明的處理套組有利地促進夾持在處理腔室中經處理的基板的周邊邊緣以平坦化基板。機械夾持的使用有利地消除了接合玻璃/載體的使用,藉由消除由接合玻璃/載體引起的不需要步驟來縮短處理時間。處理套組可具有諸如複數個突起的特徵以有利地最小化與基板的接觸,同時提供足夠的夾持力。處理套組可具有在複數個突起徑向向內的終端部分以有利地屏蔽複數個突起免受電漿影響,該電漿會導致電弧放電。
在一些實施例中,基板為薄型基板,具有800微米或更小的厚度。在一些實施例中,基板為薄型基板,諸如Taiko晶圓,在中心部分具有約30微米至約175微米的厚度。Taiko晶圓通常包括在中心部分經背面研磨的基板,導致外緣的厚度大於基板的中心部分,例如大約175微米至大約800微米的外緣厚度。歸因於相對較薄的中心部分以及中心部分與外緣之間的厚度差異,該等晶圓在處理期間經常變形或翹曲。在一些實施例中,本文提供的處理套組有利地配置以接觸基板的外緣(例如,具有約1.0 mm至約3.0 mm的寬度)以運送或平坦化基板。
第1圖圖示根據本揭示案之至少一些實施例的處理腔室的示意橫截面側視圖。在一些實施例中,處理腔室100為物理氣相沉積(physical vapor deposition; PVD)處理腔室。然而,經配置用於不同處理(例如蝕刻、化學氣相沉積(chemical vapor deposition; CVD)、原子層沉積(atomic layer deposition; ALD)等)的其他類型的處理腔室亦可得以使用或經修改為用於本文所述的處理套組的實施例。
處理腔室100為真空腔室,其適合於在基板處理期間維持內部容積120內的低大氣壓力。處理腔室100包括由蓋組件104覆蓋的腔室主體106,蓋組件104圍封位於內部容積120的上半部中的處理容積119。腔室主體106及蓋組件104可由金屬製成,諸如由鋁製成。腔室主體106可經由耦合至地面115接地。
基板支撐件124經安置在內部容積120內以支撐且固持基板122,諸如例如半導體晶圓,或其他可靜電固持的此基板。基板支撐件124可通常包含設置在基座136上的靜電卡盤150(或用於並非真空腔室的處理腔室的真空卡盤)及用於支撐基座136與靜電卡盤150的中空支撐軸112。靜電卡盤150包括其中設置有一或多個電極154的介電板。基座136通常由諸如鋁的金屬製成。基座136是可偏壓的並且可在電漿操作期間保持在電浮動電位或接地。中空支撐軸112提供導管以向靜電卡盤150提供例如背面氣體、製程氣體、流體、冷卻劑、功率等等。
在一些實施例中,中空支撐軸112經耦合至升降機構113,諸如致動器或馬達,該升降機構提供靜電卡盤150在上部處理位置(如第1圖中所示)與一或多個下部傳送位置(見第2圖及第3圖)之間的垂直移動。波紋管組件110圍繞中空支撐軸112設置並且耦合在靜電卡盤150與處理腔室100的底板126之間以提供撓性密封,該撓性密封允許靜電卡盤150的垂直運動,同時防止真空從處理腔室100之內損失。波紋管組件110亦包括與O形環165或其他合適的密封元件接觸的下波紋管凸緣164,該密封元件接觸底板126以幫助防止腔室真空損失。
中空支撐軸112提供用於將卡盤電源140及射頻源(例如,射頻電源174及射頻偏壓電源117)耦合至靜電卡盤150的導管。在一些實施例中,射頻電源174及射頻偏壓電源117經由各自的射頻匹配網路(僅示出射頻匹配網路116)耦合至靜電卡盤150。在一些實施例中,基板支撐件124可交替地包括交流或直流偏壓電源。
基板升降器130可以包括連接至軸111的環箍升降器108,軸111耦合到用於升高和降低基板升降器130的第二升降機構132,以便基板122可經由例如沉積環170置放在靜電卡盤150上或從靜電卡盤150移除。在一些實施例中,一或多個升降構件172耦接至環箍升降器108。一或多個升降構件172經配置以選擇性地升高或降低沉積環170的至少一部分。靜電卡盤150可包括用於接收一或多個升降構件172的通孔。波紋管組件131經耦接在基板升降器130與底板126之間以提供撓性密封,該撓性密封在基板升降器130的垂直運動期間保持腔室真空。
靶材138設置在與基板支撐件124相對的處理容積119中以至少部分地界定其間的處理容積。基板支撐件124具有具一平面的支撐表面,該平面與靶材138的濺射表面大體上平行。靶材138經連接至直流電源190及/或射頻電源174之一者或兩者。
靶材138包含安裝至背襯板144上的濺射板142。濺射板142包含待濺射至基板122上的材料。背襯板144由金屬製成,諸如例如不銹鋼、鋁、銅鉻或銅鋅。背襯板144可由具有足夠高的導熱率以消散在靶材138中產生的熱量的材料製成,該熱量由在濺射板142及背襯板144中產生的渦流以及來自產生的電漿的高能離子轟擊到濺射板142上而形成。
在一些實施例中,處理腔室100包括磁場產生器156以在靶材138周圍形成磁場,以改良靶材138的濺射。電容產生的電漿可藉由磁場產生器156增強,其中例如複數個磁體151(例如,永久磁體或電磁線圈)可在具有旋轉磁場的處理腔室100中提供磁場,該磁場具有垂直於基板122平面的旋轉軸。處理腔室100可另外或替代地包含磁場產生器156,該磁場產生器在靶材138附近產生磁場以增加處理容積119中的離子密度,以提高靶材的濺射。複數個磁體151可設置在蓋組件104中的空腔153中。諸如水的冷卻劑可安置在空腔153中,或循環穿過空腔153以冷卻靶材138。
處理腔室100包括包圍各種腔室元件的處理套組102,以防止該等元件與離子化處理材料之間的非所要的反應。在一些實施例中,處理套組102包括圍繞基板支撐件124及靶材138的處理屏蔽件105以至少部分地界定處理容積119。例如,處理屏蔽件105可界定處理容積119的外邊界。直流電源190可相對於處理屏蔽件105向靶材138施加偏壓。在一些實施例中,處理屏蔽件105由諸如鋁的金屬製成。
在一些實施例中,處理套組102包括擱置在靜電卡盤150的外邊緣上的沉積環170。處理套組102包括設置在處理屏蔽件105上的蓋環180,以在其間形成曲折的氣體流動路徑。在一些實施例中,在處理位置中,蓋環180的徑向內部部分擱置在基板122上以抵靠基板支撐件124夾持基板122。在一些實施例中,蓋環180的徑向內部部分擱置在基板122上以抵靠沉積環170夾持基板支撐件124。在一些實施例中,在處理位置中,蓋環180的徑向內部部分擱置在基板122上以抵靠沉積環170及基板支撐件124兩者夾持基板122。
處理腔室100經耦合至真空系統184並與其流體連通,該真空系統包括用於對處理腔室100排氣的節流閥(未示出)及真空泵(未示出)。處理腔室100內的壓力可藉由調整節流閥及/或真空泵來調節。處理腔室100亦耦接至處理氣體供應源118並與其流體連通,處理氣體供應源118可將一或多種處理氣體供應至處理腔室100,以處理設置於其中的基板122。狹縫閥148可經耦接至腔室主體106並且與腔室主體106的側壁中的開口對齊,以促進將基板122傳送進和傳送出腔室主體106。
在使用中,基板122可經由傳送機器人(未示出)傳送至內部容積120中。在一些實施例中,基板升降器130可將沉積環170的第一部分210升高至基板支撐件124上方的第一位置(見第2圖)。在一些實施例中,升降機構113將基板支撐件124及沉積環170的第二部分220升高至第二位置,其中第一部分210擱置在第二部分220上(見第3圖)。在一些實施例中,升降機構113將基板支撐件124、沉積環的第一部分210及沉積環170的第二部分220升高至第三位置或處理位置。該沉積環在2020年11月18日申請的代理人案號為44018980US01且標題為「DEPOSITION RING FOR THIN SUBSTRATE HANDLING VIA EDGE CLAMPING」的美國專利申請案第16/951,805號中更詳細地描述。
在使用中,當直流電源190向靶材138及連接到直流電源190的其他腔室元件供電時,RF電源174激發濺射氣體(例如,來自處理氣體供應源118)以形成濺射氣體的電漿。形成的電漿撞擊並轟擊靶材138的濺射表面以將材料從靶材138濺射至基板122上。在一些實施例中,由射頻電源174提供的射頻能量可在從大約2 Mhz至大約60 Mhz的頻率範圍內,或者例如可使用諸如2 Mhz、13.56 Mhz、27.12 Mhz或60 MHz的非限制性頻率。在一些實施例中,可提供複數個射頻電源(即,兩個或更多個)以提供複數個上述頻率的射頻能量。額外的射頻電源(例如,射頻偏壓電源117)也可用於向基板支撐件124提供偏壓,以將來自電漿的離子朝向基板122吸引。
第2圖圖示根據本揭示案之至少一些實施例的處於第一位置的處理腔室的一部分的橫截面等角視圖。在第一位置中,沉積環170的第一部分210設置在沉積環170的第二部分220上方。蓋環180經設置在基板支撐件124及沉積環170(亦即,第一部分210及第二部分220)上方。在一些實施例中,第一部分210具有弓形形狀而非完整的環以容納傳送機器人的傳送葉片。第一部分210包括用於在其上支撐基板122的第一內壁架242。在一些實施例中,第一部分210包括具有內表面212的第一凸起部分202,內表面212佈置在第一內壁架242的徑向外側。在一些實施例中,內表面212經傾斜以將基板122引導至第一內壁架242。在一些實施例中,第一部分210包括一或多個切口208以容納傳送機器人的末端執行器。在一些實施例中,一或多個切口208延伸穿過第一凸起部分202。第一部分210可擱置在耦接至一或多個提升構件172的支撐凸片206上。一或多個支撐凸片206有助於相對於基板支撐件124升高或降低第一部分210。一或多個支撐凸片206可具有與第一部分210的形狀對應的弓形形狀。
在一些實施例中,第二部分220擱置在基板支撐件124上或以其他方式耦合至基板支撐件124。在一些實施例中,第二部分220具有環形形狀。在一些實施例中,第二部分220設置在基板支撐件124的周邊凹槽214中。當處於第二位置或第三位置時,第二部分220包括用於將基板122支撐在其上的第二內壁架244。在一些實施例中,第二部分220包括具有內表面222的第二凸起部分204,內表面212佈置在第二內壁架244的徑向外側。第二凸起部分204可具有與第一凸起部分202的形狀對應的形狀。在一些實施例中,內表面212經傾斜以將基板122引導至第二內壁架244。
第3圖圖示根據本揭示案之至少一些實施例的處於第二位置的處理腔室的一部分的橫截面等角視圖。在第二位置中,沉積環170的第二部分220及基板支撐件124經升高,以便基板122亦擱置在基板支撐件124上。在第二位置中,第一部分210的下表面306可擱置在第二部分220的上表面308上。在一些實施例中,沉積環170的第一部分210及第二部分220可以相互巢套,以便第一部分210的內表面212與第二部分220的內表面222大體上共面。例如,第二凸起部分204可延伸至第一部分210的一或多個切口208中。在一些實施例中,第一部分210的外徑大於第二部分220的外徑。
在第二位置中,第一內凸緣242和第二內凸緣244經配置為對齊以共同形成用於基板122的外緣302擱置的夾持表面320。在一些實施例中,夾持表面320為環形表面。在一些實施例中,外緣302具有約1.0 mm至約3.0 mm的寬度。在一些實施例中,外緣302具有約50微米至約800微米的厚度。在一些實施例中,外緣302的厚度大於基板的中心部分304。
第4圖圖示根據本揭示案之至少一些實施例的處於第三位置的處理腔室的一部分的橫截面側視圖。第三位置通常為處理位置。在第三位置中,蓋環180經配置以將基板122的外緣302夾在基板支撐件124或沉積環170中的至少一者上。
蓋環180通常具有環形主體402,該環形主體包括上表面406及下表面416。在一些實施例中,上表面406大體上為平坦的。在一些實施例中,蓋環180由陶瓷材料製成。在一些實施例中,內唇部408從環形主體402徑向向內且向下延伸。在一些實施例中,內唇部408從環形主體402的上表面406以大約40度至大約70度的角度徑向向內且向下延伸。內唇部408包括外表面412及內表面418。內唇部408可夾持基板122。內唇部408可包括從內唇部408向下延伸的複數個突起410。在一些實施例中,複數個突起410從內唇部408的外表面412延伸。在一些實施例中,複數個突起410共同界定用於夾持基板122的平面基板接觸表面405。在一些實施例中,當蓋環180設置在沉積環170上時,蓋環180在沉積環170的夾持表面320與複數個突起410的平面基板接觸表面405之間具有約700微米至約850微米的空間。
在一些實施例中,蓋環180包括從環形主體402的下表面416向下延伸的第一環414。在一些實施例中,第一環414及內唇部408在其間界定第一通道422以容納沉積環170。在一些實施例中,第一環414的外表面424從環形主體402大體上垂直向下延伸。在一些實施例中,第一環414的內表面428向下且徑向向外延伸。在一些實施例中,內唇部408向下延伸超過第一環414。
在一些實施例中,第二環434從環形主體402的下表面416向下延伸。在一些實施例中,第二環434的內表面436向下且徑向向外延伸。在一些實施例中,第二環434的外表面438大體上垂直向下延伸。在一些實施例中,第二環434向下延伸超過第一環414。在一些實施例中,第二環434佈置在沉積環170的徑向外側。
在一些實施例中,外唇部440從環形主體402向下延伸。在一些實施例中,第二環434及外唇部440在其之間界定了第二通道446以容納處理屏蔽件105的內唇部450。在一些實施例中,處理屏蔽件105的內唇部450與蓋環180的外唇部440重疊以在其之間形成曲折的流動路徑。在一些實施例中,外唇部440向下延伸超過第二環434。在一些實施例中,外唇部440從環形主體402向下延伸超過內唇部408。在一些實施例中,外唇部440經設置為比第一環414更靠近第二環434。在一些實施例中,第一通道422的底板462與第二通道446的底板464大體上沿著相同的水平面。
第5圖圖示根據本揭示案之一些實施例的蓋環的等角底視圖。在一些實施例中,如第5圖中所示,複數個突起410沿著內唇部408以規則的間隔安置。在一些實施例中,複數個突起410的最下表面502共同界定平面基板接觸表面405。複數個突起410有利地提供足夠的夾持力以平坦化基板122,同時提供與基板122的最小接觸點以防止黏附及沉積物堆積。在一些實施例中,複數個突起410中的每一者具有約2.0 mm至約10.0 mm的寬度。在一些實施例中,內唇部408包括設置在複數個突起之間的複數個凹陷部分510。在一些實施例中,複數個凹陷部分510的寬度小於複數個突起410的寬度。在一些實施例中,第二通道446的底板464可以包括一或多個對準特徵514,用於將蓋環180與處理屏蔽件105對準。對準特徵514可為凹槽、狹槽、銷等。
第6A圖圖示根據本揭示案之一些實施例,沿著複數個突起410的突起獲取的蓋環的一部分的放大橫截面側視圖。第6A圖圖示沿複數個凹陷部分的凹陷部分截取的蓋環的一部分的放大橫截面側視圖。在一些實施例中,蓋環180的內唇部408包括終端部分610。在一些實施例中,內唇部408的終端部分610延伸超過複數個突起410的平面基板接觸表面405,以有利地提供電漿阻障以減少或防止電弧放電。在一些實施例中,終端部分610充分延伸超出平面基板接觸表面405,以防止從靶材138至平面基板接觸表面205的直接視線。在一些實施例中,在處理位置中,終端部分610距離基板122的中心部分304的上表面約0.2 mm至約2.0 mm。在一些實施例中,終端部分610包括圓形邊緣。在一些實施例中,複數個突起410具有圓形邊緣。
第7圖圖示根據本揭示案之一些實施例的在處理腔室(例如,處理腔室100)中平坦化基板(例如,基板122)的方法700。在一些實施例中,基板具有約20微米至約800微米的厚度。在一些實施例中,基板具有約20微米至約150微米的厚度。在一些實施例中,處理腔室為物理氣相沉積腔室。在702處,方法700包含將基板置放在基板支撐件(例如,基板支撐件124)上。在一些實施例中,基板的中心部分(例如,中心部分304)經靜電夾持(例如,經由靜電卡盤150)或真空夾持至基板支撐件上。在一些實施例中,在702之前,在將基板置放在基板支撐件上之前,將基板置放在沉積環(例如,沉積環170)的至少一部分上。
在704處,基板支撐件經升高以將基板的外緣(例如,外緣302)夾在覆蓋環(例如,覆蓋環180)上以有利地平坦化基板。在一些實施例中,外環包含距基板的外側壁約1.0 mm至約3.0 mm的區域。在一些實施例中,基板經夾持在沉積環與複數個突起(例如,複數個突起410)之間以提供覆蓋環與基板之間的最小接觸。在一些實施例中,一旦基板得以夾持,處理腔室就執行隨後的沉積、蝕刻或清潔處理。
雖然前述內容針對本揭示案之實施例,但是可在不背離本發明的基本範疇之情況下設計本揭示案的其他及進一步實施例。
100:處理腔室
102:處理套組
104:蓋組件
105:處理屏蔽件
106:腔室主體
108:環箍升降器
110:波紋管組件
111:軸
112:中空支撐軸
113:升降機構
115:地面
116:射頻匹配網路
117:射頻偏壓電源
118:處理氣體供應源
119:處理容積
120:內部容積
122:基板
124:基板支撐件
126:底板
130:基板升降器
131:波紋管組件
132:第二升降機構
136:基座
138:靶材
140:卡盤電源
142:濺射板
144:背襯板
148:狹縫閥
150:靜電卡盤
151:磁體
153:空腔
154:電極
156:磁場產生器
164:下波紋管凸緣
165:O形環
170:沉積環
172:升降構件
174:射頻電源
180:蓋環
184:真空系統
190:直流電源
202:第一凸起部分
204:第二凸起部分
206:支撐凸片
208:切口
210:第一部分
212:內表面
214:周邊凹槽
220:第二部分
222:內表面
242:第一內凸緣
244:第二內凸緣
302:外緣
304:中心部分
306:下表面
308:上表面
320:夾持表面
402:環形主體
405:平面基板接觸表面
406:上表面
408:內唇部
410:突起
412:外表面
414:第一環
416:下表面
418:內表面
422:第一通道
424:外表面
428:內表面
434:第二環
436:內表面
438:外表面
440:外唇部
446:第二通道
450:內唇部
462:底板
464:底板
502:最下表面
510:凹陷部分
514:對準特徵
610:終端部分
700:方法
702:步驟
704:步驟
簡要概述於上文且在下文中更詳細論述的本揭示案之實施例,可藉由參考在附圖中圖示的本揭示案的說明性實施例來理解。然而,附圖僅圖示本揭示案的典型實施例並且因此不被視為對範疇之限制,因為本揭示案可允許其他同等有效的實施例。
第1圖圖示根據本揭示案之至少一些實施例的處理腔室的示意橫截面側視圖。
第2圖圖示根據本揭示案之至少一些實施例的處於第一位置的處理腔室的一部分的橫截面等角視圖。
第3圖圖示根據本揭示案之至少一些實施例的處於第二位置的處理腔室的一部分的橫截面等角視圖。
第4圖圖示根據本揭示案之至少一些實施例的處於第三位置的處理腔室的一部分的橫截面側視圖。
第5圖圖示根據本揭示案之一些實施例的蓋環的等角底視圖。
第6A圖圖示根據本揭示案之一些實施例的蓋環的一部分的放大橫截面側視圖。
第6B圖圖示根據本揭示案之一些實施例的蓋環的一部分的放大橫截面側視圖。
第7圖圖示根據本揭示案之一些實施例的在處理腔室中平坦化基板的方法。
為了促進理解,在可能的情況下,已使用相同的元件符號來指示諸圖共用的相同元件。附圖並未按比例繪製並且可為了清晰起見而簡化。一個實施例的元件及特徵可有利地併入其他實施例,而無需進一步敘述。
100:處理腔室
102:處理套組
104:蓋組件
105:處理屏蔽件
106:腔室主體
108:環箍升降器
110:波紋管組件
111:軸
112:中空支撐軸
113:升降機構
115:地面
116:射頻匹配網路
117:射頻偏壓電源
118:處理氣體供應源
119:處理容積
120:內部容積
122:基板
124:基板支撐件
126:底板
130:基板升降器
131:波紋管組件
132:第二升降機構
136:基座
138:靶材
140:卡盤電源
142:濺射板
144:背襯板
148:狹縫閥
150:靜電卡盤
151:磁體
153:空腔
154:電極
156:磁場產生器
164:下波紋管凸緣
165:O形環
170:沉積環
172:升降構件
174:射頻電源
180:蓋環
184:真空系統
190:直流電源
Claims (20)
- 一種用於一處理腔室的蓋環,包含: 一環形主體,包括一上表面及一下表面;一內唇部,從該環形主體徑向向內且向下延伸;及複數個突起,從該內唇部向下延伸並且沿著該內唇部以間隔安置,其中該複數個突起的最下表面共同界定一平面基板接觸表面。
- 如請求項1所述之蓋環,其中該蓋環包括從該環形主體的一下表面向下延伸的一第一環,其中該第一環及該內唇部在其間界定一第一通道以容納一沉積環。
- 如請求項1所述之蓋環,其中一第二環從該環形主體的一下表面向下延伸,其中該第二環的一內表面向下且徑向向外延伸。
- 如請求項3所述之蓋環,其中一外唇部從該環形主體向下延伸,其中該第二環及該外唇部在其之間界定了一第二通道以容納一處理屏蔽件的一內唇部。
- 如請求項4所述之蓋環,其中該外唇部從該環形主體向下延伸超過該內唇部。
- 如請求項1至請求項5中任一項所述之蓋環,其中該內唇部從該環形主體的該上表面以大約40度至大約70度的一角度徑向向內且向下延伸。
- 如請求項1至請求項5中任一項所述之蓋環,其中該內唇部的一終端部分延伸超過該複數個突起的該平面基板接觸表面。
- 一種包含如請求項1至請求項5中任一項所述之蓋環,並且進一步包含一沉積環的處理套組,其中該沉積環及該蓋環的該複數個突起共同經配置以夾持一基板的一外緣。
- 如請求項8所述之處理套組,其中當該蓋環設置在該沉積環上時,該蓋環在該沉積環的一夾持表面與該複數個突起的該平面基板接觸表面之間具有約700微米至約850微米的一空間。
- 一種用於運送一基板的處理腔室,包含: 一腔室主體,在其中界定一內部容積; 一基板支撐件,安置在該內部容積中,用於在該基板支撐件上支撐該基板;以及 一蓋環,用於將該基板的一外緣夾持至該基板支撐件,其中該蓋環包括複數個突起,該複數個突起從該蓋環的一內唇部向下延伸並且沿著該內唇部以規則間隔安置。
- 如請求項10所述之處理腔室,其中該蓋環包括從該蓋環的一下表面向下延伸的一第一環,其中該環的一內表面向下且徑向向外延伸,其中該第一環及該內唇部在其間界定一第一通道以容納一沉積環。
- 如請求項11所述之處理腔室,進一步包含安置在該基板支撐件上的一沉積環,該沉積環具有當該蓋環及該沉積環將該基板的外緣夾持在其間時,延伸至該第一通道中的一第一凸起部分。
- 如請求項10至請求項12中任一項所述之處理腔室,進一步包含圍繞該基板支撐件安置在該內部容積中的一處理屏蔽件,其中該處理屏蔽件的一內唇部與該蓋環的一外唇部重疊以在其之間形成一曲折的流動路徑。
- 如請求項10至請求項12中任一項所述之處理腔室,其中該複數個突起具有圓形邊緣。
- 一種在一處理腔室中平坦化一基板的方法,包含以下步驟: 將一基板置放在一基板支撐件上;以及 升高該基板支撐件以將該基板的一外緣抵靠一蓋環夾持,其中該蓋環具有:一環形主體;一內唇部,從該環形主體徑向向內且向下延伸;及複數個突起,從該內唇部向下且徑向向內延伸並且沿著該內唇部以規則間隔安置,並且其中該基板抵靠該複數個突起而夾緊。
- 如請求項15所述之方法,進一步包含以下步驟:經由一靜電卡盤夾持該基板的一中心部分。
- 如請求項15所述之方法,進一步包含以下步驟:在將該基板置放在該基板支撐件上之前,將該基板置放在一沉積環的至少一部分上。
- 如請求項15所述之方法,其中該基板的外緣包含距該基板的一外側壁約1.0 mm至約3.0 mm的區域。
- 如請求項15至請求項18中任一項所述之方法,其中該基板經夾持在該蓋環的該複數個突起與安置在該基板支撐件上的一沉積環之間。
- 如請求項15至請求項18中任一項所述之方法,其中該基板具有約20微米至約150微米的一厚度。
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