CN116711060A - 经由边缘夹持的薄型基板操纵 - Google Patents

经由边缘夹持的薄型基板操纵 Download PDF

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CN116711060A
CN116711060A CN202180080408.2A CN202180080408A CN116711060A CN 116711060 A CN116711060 A CN 116711060A CN 202180080408 A CN202180080408 A CN 202180080408A CN 116711060 A CN116711060 A CN 116711060A
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substrate
ring
cover ring
protrusions
deposition
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阿比舍克·乔杜里
哈里沙·萨蒂亚纳拉亚纳
埃德温·C·苏亚雷斯
路四清
纳塔拉杰·巴斯卡·拉奥
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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Abstract

本文提供了在处理腔室中使用的处理配件的实施方式。在一些实施方式中，一种用于处理腔室中的盖环包括：环形主体，包括上表面和下表面；内唇部，从环形主体径向向内且向下延伸；和多个突起，从内唇部向下延伸并且沿着内唇部以规则间隔安置，其中多个突起的最下表面共同界定平面基板接触表面。

Description

经由边缘夹持的薄型基板操纵
技术领域
本公开内容的实施方式大体涉及基板处理设备，并且更特定而言，涉及用于基板处理设备的处理配件。
背景技术
用于处理半导体基板的沉积腔室典型地包括支撑基板的基板支撑件。使用等离子体的沉积腔室典型地包括设置在基板支撑件周围的处理配件，用于保护腔室壁免受不想要的沉积并且用以限制等离子体。处理配件通常包括工艺屏蔽件、盖环、沉积环等。通常，基板可经由静电吸附、真空吸附、重力固持至基板支撑件上。然而，发明人已观察到，基板(特别是当很薄(亦即，小于约800微米)时)可能会弯曲，导致工艺不均匀。在这些情况下，基板典型地粘合(bond)至载体板。然而，由于额外的粘合和剥离步骤，粘合基板会增加额外的处理时间，并且粘合基板需要额外的工具。
因此，发明人已提供用于平坦化(flatten)基板的改良装置和方法。
发明内容
本文提供了在处理腔室中使用的处理配件的实施方式。在一些实施方式中，一种用于处理腔室的盖环包括：环形主体，包括上表面和下表面；内唇部，从环形主体径向向内且向下延伸；和多个突起，从内唇部向下延伸并且沿着内唇部以规则间隔设置，其中多个突起的最下表面共同界定平面基板接触表面。
在一些实施方式中，一种用于操纵基板的处理腔室，包括：腔室主体，在该腔室主体中界定内部容积；基板支撑件，设置在该内部容积中，用于在该基板支撑件上支撑基板；和盖环，用以将基板的外缘夹持至基板支撑件，其中该盖环包括多个突起，该多个突起从盖环的内唇部向下且径向向内延伸并且沿着内唇部以规则间隔设置。
在一些实施方式中，一种在处理腔室中平坦化基板的方法包括：将基板置放在基板支撑件上；以及升高基板支撑件以抵靠盖环夹持基板的外缘，其中该盖环具有：环形主体；内唇部，从环形主体径向向内且向下延伸；和多个突起，从内唇部向下且径向向内延伸并且沿着内唇部以规则间隔设置，并且其中基板抵靠多个突起而被夹持。
本公开内容的其他和进一步实施方式描述如下。
附图说明
简要概述于上文且在下文中更详细论述的本公开内容的实施方式，可通过参考在附图中图示的本公开内容的说明性实施方式来理解。然而，附图仅图示本公开内容的典型实施方式并且因此不被视为对范围的限制，因为本公开内容可允许其他同等有效的实施方式。
图1图示根据本公开内容的至少一些实施方式的处理腔室的示意侧视截面图。
图2图示根据本公开内容的至少一些实施方式的处于第一位置的处理腔室的一部分的截面等角视图。
图3图示根据本公开内容的至少一些实施方式的处于第二位置的处理腔室的一部分的截面等角视图。
图4图示根据本公开内容的至少一些实施方式的处于第三位置的处理腔室的一部分的侧视截面图。
图5图示根据本公开内容的一些实施方式的盖环的等角底视图。
图6A图示根据本公开内容的一些实施方式的盖环的一部分的放大侧视截面图。
图6B图示根据本公开内容的一些实施方式的盖环的一部分的放大侧视截面图。
图7图示根据本公开内容的一些实施方式的在处理腔室中平坦化基板的方法。
为了促进理解，在可能的情况下，已使用相同的参考符号来指示诸图共用的相同元件。附图并未按比例绘制并且可为了清晰起见而简化。一个实施方式的元件和特征可有利地并入其他实施方式，而无需进一步叙述。
具体实施方式
本文提供了在处理腔室中使用的处理配件的实施方式。本发明的处理配件有利地促进夹持正在处理腔室中处理的基板的周边边缘以平坦化基板。机械夹持的使用有利地消除了粘合玻璃/载体的使用，通过消除由粘合玻璃/载体引起的不需要步骤来缩短处理时间。处理配件可具有诸如多个突起的特征以有利地最小化与基板的接触，同时提供足够的夹持力。处理配件可具有在多个突起的径向内侧的终端部分以有利地屏蔽多个突起免受等离子体影响，该等离子体会导致电弧放电。
在一些实施方式中，基板为薄型基板，具有约800微米或更小的厚度。在一些实施方式中，基板为薄型基板，诸如Taiko晶片，在中心部分具有约30微米至约175微米的厚度。Taiko晶片通常包括在中心部分经背面研磨的基板，导致外缘的厚度大于基板的中心部分，例如约175微米至约800微米的外缘厚度。归因于相对较薄的中心部分以及中心部分与外缘之间的厚度差异，这些晶片在处理期间经常变形或翘曲。在一些实施方式中，本文提供的处理配件被有利地构造成接触基板的外缘(例如，具有约1.0mm至约3.0mm的宽度)以操纵或平坦化基板。
图1图示根据本公开内容的至少一些实施方式的处理腔室的示意侧视截面图。在一些实施方式中，处理腔室100为物理气相沉积(physical vapor deposition；PVD)处理腔室。然而，被构造成用于不同处理(例如蚀刻、化学气相沉积(chemical vapor deposition；CVD)、原子层沉积(atomic layer deposition；ALD)等)的其他类型的处理腔室亦可得以使用或经修改为与本文所述的处理配件的实施方式一起使用。
处理腔室100为真空腔室，其适合于在基板处理期间维持内部容积120内的亚大气压力。处理腔室100包括由盖组件104覆盖的腔室主体106，盖组件104包封位于内部容积120的上半部中的处理容积119。腔室主体106和盖组件104可由金属制成，诸如铝。腔室主体106可经由耦接至地面115而接地。
基板支撑件124被设置在内部容积120内以支撑且固持基板122，诸如例如半导体晶片，或其他这类可静电固持的基板。基板支撑件124可通常包含设置在基座136上的静电卡盘150(或用于并非真空腔室的处理腔室的真空卡盘)和用于支撑基座136与静电卡盘150的中空支撑轴112。静电卡盘150包括其中设置有一个或多个电极154的介电板。基座136通常由诸如铝的金属制成。基座136是能偏压的并且可在等离子体操作期间保持在电浮动电位或接地。中空支撑轴112提供导管以向静电卡盘150提供例如背侧气体、工艺气体、流体、冷却剂、功率或类似物。
在一些实施方式中，中空支撑轴112被耦接至升降机构113，诸如致动器或马达，该升降机构提供静电卡盘150在上部处理位置(如图1中所示)与一个或多个下部传送位置(见图2和图3)之间的垂直移动。波纹管组件110围绕中空支撑轴112设置并且耦接在静电卡盘150与处理腔室100的底板126之间以提供柔性密封，该柔性密封允许静电卡盘150的垂直运动，同时防止真空从处理腔室100之内损失。波纹管组件110亦包括与O形环165或其他合适的密封元件接触的下波纹管凸缘164，该密封元件接触底板126以帮助防止腔室真空损失。
中空支撑轴112提供用于将卡盘电源140和射频源(例如，射频电源174和射频偏压电源117)耦接至静电卡盘150的导管。在一些实施方式中，射频电源174和射频偏压电源117经由各自的射频匹配网络(仅示出射频匹配网络116)耦接至静电卡盘150。在一些实施方式中，基板支撑件124可替代地包括交流或直流偏压电源。
基板升降器130可以包括连接至轴111的环箍(hoop)升降器108，轴111耦接到用于升高和降低基板升降器130的第二升降机构132，使得基板122可经由例如沉积环170置放在静电卡盘150上或从静电卡盘150移除。在一些实施方式中，一个或多个升降构件172耦接至环箍升降器108。一个或多个升降构件172被构造成选择性地升高或降低沉积环170的至少一部分。静电卡盘150可包括用以接收一个或多个升降构件172的通孔。波纹管组件131耦接在基板升降器130与底板126之间以提供柔性密封，该柔性密封在基板升降器130的垂直运动期间保持腔室真空。
靶材138设置在处理容积119中与基板支撑件124相对以至少部分地界定其间的处理容积。基板支撑件124具有支撑表面，该支撑表面具有与靶材138的溅射表面大体上平行的平面。靶材138连接至直流电源190和/或射频电源174的一者或两者。
靶材138包含安装至背板144上的溅射板142。溅射板142包含待溅射至基板122上的材料。背板144由金属制成，诸如例如不锈钢、铝、铜铬或铜锌。背板144可由具有足够高的导热率以消散在靶材138中产生的热量的材料制成，该热量由在溅射板142和背板144中产生的涡流以及来自产生的等离子体的高能离子轰击到溅射板142上而形成。
在一些实施方式中，处理腔室100包括磁场产生器156以在靶材138周围形成磁场，以改良靶材138的溅射。电容产生的等离子体可通过磁场产生器156增强，其中例如多个磁体151(例如，永久磁体或电磁线圈)可在处理腔室100中提供磁场，处理腔室100具有旋转磁场，该磁场具有垂直于基板122的平面的旋转轴。处理腔室100可另外或替代地包含磁场产生器156，该磁场产生器在靶材138附近产生磁场以增加处理容积119中的离子密度，以提高靶材材料的溅射。多个磁体151可设置在盖组件104中的空腔153中。诸如水的冷却剂可设置在空腔153中，或循环穿过空腔153以冷却靶材138。
处理腔室100包括包围各种腔室部件的处理配件102，以防止这些部件与离子化处理材料之间的不想要的反应。在一些实施方式中，处理配件102包括围绕基板支撑件124和靶材138的处理屏蔽件105以至少部分地界定处理容积119。例如，处理屏蔽件105可界定处理容积119的外边界。直流电源190可相对于处理屏蔽件105向靶材138施加偏压。在一些实施方式中，处理屏蔽件105由诸如铝的金属制成。
在一些实施方式中，处理配件102包括搁置在静电卡盘150的外边缘上的沉积环170。处理配件102包括设置在处理屏蔽件105上的盖环180，以在其间形成曲折的气体流动路径。在一些实施方式中，在处理位置中，盖环180的径向内部部分搁置在基板122上以抵靠基板支撑件124夹持基板122。在一些实施方式中，盖环180的径向内部部分搁置在基板122上以抵靠沉积环170夹持基板支撑件124。在一些实施方式中，在处理位置中，盖环180的径向内部部分搁置在基板122上以抵靠沉积环170和基板支撑件124两者夹持基板122。
处理腔室100耦接至真空系统184并与其流体连通，该真空系统包括用于对处理腔室100排气的节流阀(未示出)和真空泵(未示出)。处理腔室100内的压力可通过调整节流阀和/或真空泵来调节。处理腔室100亦耦接至处理气体供应源118并与其流体连通，处理气体供应源118可将一种或多种处理气体供应至处理腔室100，用于处理设置于该处理腔室中的基板122。狭缝阀148可耦接至腔室主体106并且与腔室主体106的侧壁中的开口对齐，以促进将基板122传送进和传送出腔室主体106。
在使用中，基板122可经由传送机器人(未示出)传送至内部容积120中。在一些实施方式中，基板升降器130可将沉积环170的第一部分210升高至基板支撑件124上方的第一位置(见图2)。在一些实施方式中，升降机构113将基板支撑件124和沉积环170的第二部分220升高至第二位置，其中第一部分210搁置在第二部分220上(见图3)。在一些实施方式中，升降机构113将基板支撑件124、沉积环的第一部分210和沉积环170的第二部分220升高至第三位置或处理位置。该沉积环在2020年11月18日申请的代理人案号为44018980US01且名称为“DEPOSITION RING FOR THIN SUBSTRATE HANDLING VIA EDGE CLAMPING”的美国专利申请案第16/951,805号中更详细地描述。
在使用中，当直流电源190向靶材138和连接到直流电源190的其他腔室部件供电时，射频电源174激励溅射气体(例如，来自处理气体供应源118)以形成溅射气体的等离子体。形成的等离子体撞击并轰击靶材138的溅射表面以将材料从靶材138溅射至基板122上。在一些实施方式中，由射频电源174提供的射频能量可在从约2MHz至约60MHz的频率范围内，或者例如可使用诸如2MHz、13.56MHz、27.12MHz或60MHz的非限制性频率。在一些实施方式中，可提供多个射频电源(即，两个或更多个)以提供多个上述频率的射频能量。额外的射频电源(例如，射频偏压电源117)也可用于向基板支撑件124提供偏压，以从等离子体朝向基板122吸引离子。
图2图示根据本公开内容的至少一些实施方式的处于第一位置的处理腔室的一部分的截面等角视图。在第一位置中，沉积环170的第一部分210设置在沉积环170的第二部分220上方。盖环180设置在基板支撑件124和沉积环170(亦即，第一部分210和第二部分220)上方。在一些实施方式中，第一部分210具有弓形形状而非完整的环以容纳传送机器人的传送叶片。第一部分210包括用于在其上支撑基板122的第一内壁架242。在一些实施方式中，第一部分210包括具有内表面212的第一凸起部分202，内表面212设置在第一内壁架242的径向外侧。在一些实施方式中，内表面212倾斜以将基板122引导至第一内壁架242。在一些实施方式中，第一部分210包括一个或多个切口208以容纳传送机器人的终端受动器。在一些实施方式中，一个或多个切口208延伸穿过第一凸起部分202。第一部分210可搁置在耦接至一个或多个升降构件172的一个或多个支撑凸出部(support tab)206上。一个或多个支撑凸出部206有助于相对于基板支撑件124升高或降低第一部分210。一个或多个支撑凸出部206可具有与第一部分210的形状对应的弓形形状。
在一些实施方式中，第二部分220搁置在基板支撑件124上或以其他方式耦接至基板支撑件124。在一些实施方式中，第二部分220具有环形形状。在一些实施方式中，第二部分220设置在基板支撑件124的周边沟槽214中。当处于第二位置或第三位置时，第二部分220包括用于将基板122支撑在其上的第二内壁架244。在一些实施方式中，第二部分220包括具有内表面222的第二凸起部分204，内表面222设置在第二内壁架244的径向外侧。第二凸起部分204可具有与第一凸起部分202的形状对应的形状。在一些实施方式中，内表面212倾斜以将基板122引导至第二内壁架244。
图3图示根据本公开内容的至少一些实施方式的处于第二位置的处理腔室的一部分的截面等角视图。在第二位置中，沉积环170的第二部分220和基板支撑件124升高，使得基板122亦搁置在基板支撑件124上。在第二位置中，第一部分210的下表面306可搁置在第二部分220的上表面308上。在一些实施方式中，沉积环170的第一部分210和第二部分220可以相互叠套(nest)，使得第一部分210的内表面212与第二部分220的内表面222大体上共面。例如，第二凸起部分204可延伸至第一部分210的一个或多个切口208中。在一些实施方式中，第一部分210的外径大于第二部分220的外径。
在第二位置中，第一内壁架242和第二内壁架244被构造为对齐以共同形成用于使基板122的外缘302搁置于其上的夹持表面320。在一些实施方式中，夹持表面320为环形表面。在一些实施方式中，外缘302具有约1.0mm至约3.0mm的宽度。在一些实施方式中，外缘302具有约50微米至约800微米的厚度。在一些实施方式中，外缘302的厚度大于基板的中心部分304。
图4图示根据本公开内容的至少一些实施方式的处于第三位置的处理腔室的一部分的截面侧视图。第三位置通常为处理位置。在第三位置中，盖环180被构造成抵靠基板支撑件124或沉积环170中的至少一者夹持基板122的外缘302。
盖环180通常具有环形主体402，该环形主体包括上表面406和下表面416。在一些实施方式中，上表面406大体上为平坦的。在一些实施方式中，盖环180由陶瓷材料制成。在一些实施方式中，内唇部408从环形主体402径向向内且向下延伸。在一些实施方式中，内唇部408从环形主体402的上表面406以约40度至约70度的角度径向向内且向下延伸。内唇部408包括外表面412和内表面418。内唇部408可夹持基板122。内唇部408可包括从内唇部408向下延伸的多个突起410。在一些实施方式中，多个突起410从内唇部408的外表面412延伸。在一些实施方式中，多个突起410共同界定用于夹持基板122的平面基板接触表面405。在一些实施方式中，当盖环180设置在沉积环170上时，盖环180在沉积环170的夹持表面320与多个突起410的平面基板接触表面405之间具有约700微米至约850微米的空间。
在一些实施方式中，盖环180包括从环形主体402的下表面416向下延伸的第一环414。在一些实施方式中，第一环414和内唇部408在其间界定第一通道422以容纳沉积环170。在一些实施方式中，第一环414的外表面424从环形主体402大体上垂直向下延伸。在一些实施方式中，第一环414的内表面428向下且径向向外延伸。在一些实施方式中，内唇部408向下延伸超过第一环414。
在一些实施方式中，第二环434从环形主体402的下表面416向下延伸。在一些实施方式中，第二环434的内表面436向下且径向向外延伸。在一些实施方式中，第二环434的外表面438大体上垂直向下延伸。在一些实施方式中，第二环434向下延伸超过第一环414。在一些实施方式中，第二环434设置在沉积环170的径向外侧。
在一些实施方式中，外唇部440从环形主体402向下延伸。在一些实施方式中，第二环434和外唇部440在其之间界定了第二通道446以容纳处理屏蔽件105的内唇部450。在一些实施方式中，处理屏蔽件105的内唇部450与盖环180的外唇部440重叠以在其之间形成曲折的流动路径。在一些实施方式中，外唇部440向下延伸超过第二环434。在一些实施方式中，外唇部440从环形主体402向下延伸超过内唇部408。在一些实施方式中，外唇部440被设置为比第一环414更靠近第二环434。在一些实施方式中，第一通道422的底部462与第二通道446的底部464大体上沿着相同的水平面。
图5图示根据本公开内容的一些实施方式的盖环的等角底视图。在一些实施方式中，如图5中所示，多个突起410沿着内唇部408以规则的间隔设置。在一些实施方式中，多个突起410的最下表面502共同界定平面基板接触表面405。多个突起410有利地提供足够的夹持力以平坦化基板122，同时提供与基板122的最小接触点以防止粘附和沉积物堆积。在一些实施方式中，多个突起410中的每一个具有约2.0mm至约10.0mm的宽度。在一些实施方式中，内唇部408包括设置在多个突起之间的多个凹陷部分510。在一些实施方式中，多个凹陷部分510的宽度小于多个突起410的宽度。在一些实施方式中，第二通道446的底部464可以包括一个或多个对准特征514，用于将盖环180与处理屏蔽件105对准。对准特征514可为凹槽、狭槽、销或类似物。
图6A图示根据本公开内容的一些实施方式，沿着多个突起410中的一突起获取的盖环的一部分的放大侧视截面图。图6A图示沿多个凹陷部分510中的一凹陷部分获取的盖环的一部分的放大侧视截面图。在一些实施方式中，盖环180的内唇部408包括终端部分610。在一些实施方式中，内唇部408的终端部分610延伸超过多个突起410的平面基板接触表面405，以有利地提供等离子体屏障以减少或防止电弧放电。在一些实施方式中，终端部分610充分延伸超出平面基板接触表面405，以防止从靶材138至平面基板接触表面205的直接视线。在一些实施方式中，在处理位置中，终端部分610距离基板122的中心部分304的上表面约0.2mm至约2.0mm。在一些实施方式中，终端部分610包括倒圆边缘。在一些实施方式中，多个突起410具有倒圆边缘。
图7图示根据本公开内容的一些实施方式的在处理腔室(例如，处理腔室100)中平坦化基板(例如，基板122)的方法700。在一些实施方式中，基板具有约20微米至约800微米的厚度。在一些实施方式中，基板具有约20微米至约150微米的厚度。在一些实施方式中，处理腔室为物理气相沉积腔室。在702处，方法700包含将基板置放在基板支撑件(例如，基板支撑件124)上。在一些实施方式中，基板的中心部分(例如，中心部分304)被静电吸附(例如，经由静电卡盘150)或真空吸附至基板支撑件。在一些实施方式中，在702之前，在将基板置放在基板支撑件上之前，将基板置放在沉积环(例如，沉积环170)的至少一部分上。
在704处，基板支撑件被升高以抵靠盖环(例如，盖环180)夹持基板的外缘(例如，外缘302)以有利地平坦化基板。在一些实施方式中，外环包含距基板的外侧壁约1.0mm至约3.0mm的区域。在一些实施方式中，基板被夹持在沉积环与多个突起(例如，多个突起410)之间以提供盖环与基板之间的最小接触。在一些实施方式中，一旦基板得以夹持，处理腔室就执行随后的沉积、蚀刻或清洁处理。
虽然前述内容针对本公开内容的实施方式，但是可在不背离本公开内容的基本范围的情况下设计本公开内容的其他和进一步实施方式。

Claims (20)

1.一种用于处理腔室的盖环，包含：
环形主体，包括上表面和下表面；内唇部，从所述环形主体径向向内且向下延伸；和多个突起，从所述内唇部向下延伸并且沿着所述内唇部以间隔设置，其中所述多个突起的最下表面共同界定平面基板接触表面。
2.如权利要求1所述的盖环，其中所述内唇部从所述环形主体的所述上表面以约40度至约70度的角度径向向内且向下延伸。
3.如权利要求1所述的盖环，其中第二环从所述环形主体的下表面向下延伸，其中所述第二环的内表面向下且径向向外延伸。
4.如权利要求3所述的盖环，其中外唇部从所述环形主体向下延伸，其中所述第二环和所述外唇部在所述第二环和所述外唇部之间界定了第二通道以容纳处理屏蔽件的内唇部。
5.如权利要求4所述的盖环，其中所述外唇部从所述环形主体向下延伸超过所述内唇部。
6.如权利要求1至权利要求5中任一项所述的盖环，其中所述盖环包括第一环，所述第一环从所述环形主体的下表面向下延伸，其中所述第一环和所述内唇部在所述第一环和所述内唇部之间界定第一通道以容纳沉积环。
7.如权利要求1至权利要求5中任一项所述的盖环，其中所述内唇部的终端部分延伸超过所述多个突起的所述平面基板接触表面。
8.如权利要求1至权利要求5中任一项所述的盖环，其中所述多个突起具有倒圆边缘。
9.一种包含如权利要求1至权利要求5中任一项所述的盖环，并且进一步包含沉积环的处理配件，其中所述沉积环和所述盖环的所述多个突起共同被构造为夹持基板的外缘。
10.如权利要求8所述的处理配件，其中当所述盖环设置在所述沉积环上时，所述盖环在所述沉积环的夹持表面与所述多个突起的所述平面基板接触表面之间具有约700微米至约850微米的空间。
11.一种用于操纵基板的处理腔室，包含：
腔室主体，在其中界定内部容积；
基板支撑件，设置在所述内部容积中，用于在所述基板支撑件上支撑所述基板；以及
如权利要求1至权利要求5中任一项所述的盖环，被构造以将所述基板的外缘夹持至所述基板支撑件。
12.如权利要求11所述的处理腔室，其中所述盖环包括从所述盖环的下表面向下延伸的第一环，其中所述环的内表面向下且径向向外延伸，其中所述第一环和所述内唇部在其间界定第一通道以容纳沉积环。
13.如权利要求12所述的处理腔室，进一步包含设置在所述基板支撑件上的沉积环，所述沉积环具有第一凸起部分，当所述盖环和所述沉积环将所述基板的外缘夹持在其间时，所述第一凸起部分延伸至所述第一通道中。
14.如权利要求11所述的处理腔室，其中所述沉积环包括第一部分和第二部分，其中所述第一部分搁置在所述第二部分上。
15.一种在处理腔室中平坦化基板的方法，包含：
将基板置放在基板支撑件上；以及
升高所述基板支撑件以抵靠盖环夹持所述基板的外缘，其中所述盖环具有：环形主体；内唇部，从所述环形主体径向向内且向下延伸；和多个突起，从所述内唇部向下且径向向内延伸并且沿着所述内唇部以规则间隔设置，并且其中所述基板抵靠所述多个突起而被夹持。
16.如权利要求15所述的方法，进一步包含：经由静电卡盘夹持所述基板的中心部分。
17.如权利要求15所述的方法，进一步包含：在将所述基板置放在所述基板支撑件上之前，将所述基板置放在沉积环的一部分上。
18.如权利要求15所述的方法，其中所述基板的所述外缘包含距所述基板的外侧壁约1.0mm至约3.0mm的区域。
19.如权利要求15至权利要求18中任一项所述的方法，其中所述基板被夹持在所述盖环的所述多个突起与设置在所述基板支撑件上的沉积环之间。
20.如权利要求15至权利要求18中任一项所述的方法，其中所述基板具有约20微米至约150微米的厚度。
CN202180080408.2A 2020-11-18 2021-11-15 经由边缘夹持的薄型基板操纵 Pending CN116711060A (zh)

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