JP5260023B2 - プラズマ成膜装置 - Google Patents
プラズマ成膜装置 Download PDFInfo
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- JP5260023B2 JP5260023B2 JP2007272233A JP2007272233A JP5260023B2 JP 5260023 B2 JP5260023 B2 JP 5260023B2 JP 2007272233 A JP2007272233 A JP 2007272233A JP 2007272233 A JP2007272233 A JP 2007272233A JP 5260023 B2 JP5260023 B2 JP 5260023B2
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- 230000008021 deposition Effects 0.000 title claims 3
- 239000010409 thin film Substances 0.000 claims description 53
- 239000010408 film Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 47
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
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- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Description
チャンバ内の支持台上に載置した基板にバイアスを印加すると共に、前記基板上にプラズマを用いて薄膜を形成するプラズマ成膜装置において、
前記支持台は、
前記基板との接触面の大きさが前記基板の外径より小さい円柱状の支持台本体と、
前記支持台本体の側面から外周方向に延設された鍔部とを備え、
前記鍔部と前記基板外周の裏面との間に所定の第1の隙間を形成し、当該第1の隙間を、0.2mm以上かつ2mm以下の範囲としたことを特徴とする。
上記第1の発明に記載のプラズマ成膜装置において、
前記接触面の周縁部を前記支持台本体の側面にかけて丸めたことを特徴とする。
上記第1、第2の発明に記載のプラズマ成膜装置において、
前記鍔部の根本部分を前記支持台本体の側面にかけて丸めたことを特徴とする。
チャンバ内の支持台上に載置した基板にバイアスを印加すると共に、前記基板上にプラズマを用いて薄膜を形成するプラズマ成膜装置において、
前記支持台は、
前記基板との接触面の大きさが前記基板の外径より小さい切頭型円錐状の支持台本体を備え、
前記支持台本体の傾斜した側面と前記基板外周の裏面との間に所定の第1の隙間を形成したことを特徴とする。
チャンバ内の支持台上に載置した基板にバイアスを印加すると共に、前記基板上にプラズマを用いて薄膜を形成するプラズマ成膜装置において、
前記支持台は、
前記基板との接触面の大きさが前記基板の外径より小さい円柱状の支持台本体と、
前記支持台本体の側面から外周方向に延設された鍔部と、
前記鍔部を下方に押さえつけて、前記支持台本体を支持台下部へ固定する固定部材と、
前記固定部材の上面に載置され、前記固定部材の上面を覆うカバー部材とを備え、
前記固定部材と前記基板外周の裏面との間に所定の第1の隙間を形成すると共に、前記カバー部材と前記基板外周の端部との間に所定の第2の隙間を形成したことを特徴とする。
上記第5の発明に記載のプラズマ成膜装置において、
前記第2の隙間は、0.5mmより大きくかつ1.5mm以下の範囲であることを特徴とする。
上記第4〜第6のいずれか1つの発明に記載のプラズマ成膜装置において、
前記第1の隙間は、0.2mm以上かつ2mm以下の範囲であることを特徴とする。
上記第1〜第8のいずれか1つの発明に記載のプラズマ成膜装置において、
前記薄膜は、窒化膜であることを特徴とする。
本発明に係るプラズマ成膜装置は、図1に示すように、金属製の円筒状の真空チャンバ1の内部が処理室2として構成されるものであり、真空チャンバ1の上部開口部には、絶縁材料からなる円板状の天井板3が、上部開口部を閉鎖するように配設されている。又、真空チャンバ1の下部には支持台4及び支持台4を保持する下部支持台10が備えられ、半導体材料からなるウェハ5(基板)が支持台4の上面に載置される。真空チャンバ1は、例えば、アルミニウム等の金属から構成されて、その内壁がアルマイト処理されており、又、天井板3は、例えば、アルミナ等のセラミクスにより構成されている。
4a 接触面
4b 支持台本体
4c 鍔部
4d 側面
4e、4f 曲面部
4g 傾斜側面
5 ウェハ
14 固定金物
15 支持台カバー
Claims (8)
- チャンバ内の支持台上に載置した基板にバイアスを印加すると共に、前記基板上にプラズマを用いて薄膜を形成するプラズマ成膜装置において、
前記支持台は、
前記基板との接触面の大きさが前記基板の外径より小さい円柱状の支持台本体と、
前記支持台本体の側面から外周方向に延設された鍔部とを備え、
前記鍔部と前記基板外周の裏面との間に所定の第1の隙間を形成し、当該第1の隙間を、0.2mm以上かつ2mm以下の範囲としたことを特徴とするプラズマ成膜装置。 - 請求項1に記載のプラズマ成膜装置において、
前記接触面の周縁部を前記支持台本体の側面にかけて丸めたことを特徴とするプラズマ成膜装置。 - 請求項1又は請求項2に記載のプラズマ成膜装置において、
前記鍔部の根本部分を前記支持台本体の側面にかけて丸めたことを特徴とするプラズマ成膜装置。 - チャンバ内の支持台上に載置した基板にバイアスを印加すると共に、前記基板上にプラズマを用いて薄膜を形成するプラズマ成膜装置において、
前記支持台は、
前記基板との接触面の大きさが前記基板の外径より小さい切頭型円錐状の支持台本体を備え、
前記支持台本体の傾斜した側面と前記基板外周の裏面との間に所定の第1の隙間を形成したことを特徴とするプラズマ成膜装置。 - チャンバ内の支持台上に載置した基板にバイアスを印加すると共に、前記基板上にプラズマを用いて薄膜を形成するプラズマ成膜装置において、
前記支持台は、
前記基板との接触面の大きさが前記基板の外径より小さい円柱状の支持台本体と、
前記支持台本体の側面から外周方向に延設された鍔部と、
前記鍔部を下方に押さえつけて、前記支持台本体を支持台下部へ固定する固定部材と、
前記固定部材の上面に載置され、前記固定部材の上面を覆うカバー部材とを備え、
前記固定部材と前記基板外周の裏面との間に所定の第1の隙間を形成すると共に、前記カバー部材と前記基板外周の端部との間に所定の第2の隙間を形成したことを特徴とするプラズマ成膜装置。 - 請求項5に記載のプラズマ成膜装置において、
前記第2の隙間は、0.5mmより大きくかつ1.5mm以下の範囲であることを特徴とするプラズマ成膜装置。 - 請求項4から請求項6のいずれか一項に記載のプラズマ成膜装置において、
前記第1の隙間は、0.2mm以上かつ2mm以下の範囲であることを特徴とするプラズマ成膜装置。 - 請求項1から請求項7のいずれか一項に記載のプラズマ成膜装置において、
前記薄膜は、窒化膜であることを特徴とするプラズマ成膜装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007272233A JP5260023B2 (ja) | 2007-10-19 | 2007-10-19 | プラズマ成膜装置 |
PCT/JP2008/068525 WO2009051087A1 (ja) | 2007-10-19 | 2008-10-14 | プラズマ成膜装置 |
KR1020107008360A KR101217409B1 (ko) | 2007-10-19 | 2008-10-14 | 플라즈마 성막 장치 |
US12/681,090 US20100236482A1 (en) | 2007-10-19 | 2008-10-14 | Plasma film forming apparatus |
EP08839271A EP2202786A1 (en) | 2007-10-19 | 2008-10-14 | Plasma film forming apparatus |
TW097140049A TW200937501A (en) | 2007-10-19 | 2008-10-17 | Plasma deposition apparatus |
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JP2007272233A JP5260023B2 (ja) | 2007-10-19 | 2007-10-19 | プラズマ成膜装置 |
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Publication Number | Publication Date |
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JP2009099897A JP2009099897A (ja) | 2009-05-07 |
JP5260023B2 true JP5260023B2 (ja) | 2013-08-14 |
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JP2007272233A Expired - Fee Related JP5260023B2 (ja) | 2007-10-19 | 2007-10-19 | プラズマ成膜装置 |
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US (1) | US20100236482A1 (ja) |
EP (1) | EP2202786A1 (ja) |
JP (1) | JP5260023B2 (ja) |
KR (1) | KR101217409B1 (ja) |
TW (1) | TW200937501A (ja) |
WO (1) | WO2009051087A1 (ja) |
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JP5347288B2 (ja) * | 2008-03-17 | 2013-11-20 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
JP5374935B2 (ja) * | 2008-06-23 | 2013-12-25 | セイコーエプソン株式会社 | Cvd装置及び半導体装置の製造方法 |
CN102666917A (zh) * | 2009-11-30 | 2012-09-12 | 朗姆研究公司 | 一种带有成角度侧壁的静电卡盘 |
JP5610850B2 (ja) | 2010-05-28 | 2014-10-22 | 三菱重工業株式会社 | 窒化珪素膜の製造方法及び装置 |
JP5895240B2 (ja) * | 2012-07-27 | 2016-03-30 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP6700118B2 (ja) * | 2016-06-24 | 2020-05-27 | 東京エレクトロン株式会社 | プラズマ成膜装置および基板載置台 |
JP6778553B2 (ja) * | 2016-08-31 | 2020-11-04 | 株式会社日本製鋼所 | 原子層成長装置および原子層成長方法 |
JP2018127711A (ja) * | 2017-02-10 | 2018-08-16 | 株式会社アルバック | スパッタリング装置 |
TWI656235B (zh) * | 2017-07-28 | 2019-04-11 | 漢民科技股份有限公司 | 化學氣相沉積系統 |
JP6914170B2 (ja) * | 2017-11-07 | 2021-08-04 | 日本特殊陶業株式会社 | セラミックス基材の保護方法 |
JP7248167B1 (ja) | 2022-03-03 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
JP7203260B1 (ja) * | 2022-03-30 | 2023-01-12 | 住友大阪セメント株式会社 | 静電チャック部材、静電チャック装置及び静電チャック部材の製造方法 |
JP7248182B1 (ja) | 2022-08-30 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
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JP3106719B2 (ja) * | 1991-11-18 | 2000-11-06 | 富士電機株式会社 | Ecrプラズマ処理装置 |
JP3306677B2 (ja) * | 1993-05-12 | 2002-07-24 | 東京エレクトロン株式会社 | 自己バイアス測定方法及び装置並びに静電吸着装置 |
JP3173692B2 (ja) * | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理方法 |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
US5740009A (en) * | 1996-11-29 | 1998-04-14 | Applied Materials, Inc. | Apparatus for improving wafer and chuck edge protection |
JPH10303288A (ja) * | 1997-04-26 | 1998-11-13 | Anelva Corp | プラズマ処理装置用基板ホルダー |
JP2000012470A (ja) * | 1998-06-19 | 2000-01-14 | Shin Etsu Handotai Co Ltd | 気相成長装置 |
JP4364335B2 (ja) * | 1999-02-01 | 2009-11-18 | キヤノンアネルバ株式会社 | スパッタリング装置 |
US6375748B1 (en) * | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
JP4041722B2 (ja) * | 2002-11-05 | 2008-01-30 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
JP4417197B2 (ja) * | 2004-07-30 | 2010-02-17 | 住友大阪セメント株式会社 | サセプタ装置 |
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2007
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2008
- 2008-10-14 EP EP08839271A patent/EP2202786A1/en not_active Withdrawn
- 2008-10-14 WO PCT/JP2008/068525 patent/WO2009051087A1/ja active Application Filing
- 2008-10-14 US US12/681,090 patent/US20100236482A1/en not_active Abandoned
- 2008-10-14 KR KR1020107008360A patent/KR101217409B1/ko not_active IP Right Cessation
- 2008-10-17 TW TW097140049A patent/TW200937501A/zh unknown
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KR20100063800A (ko) | 2010-06-11 |
TW200937501A (en) | 2009-09-01 |
WO2009051087A1 (ja) | 2009-04-23 |
JP2009099897A (ja) | 2009-05-07 |
KR101217409B1 (ko) | 2013-01-02 |
US20100236482A1 (en) | 2010-09-23 |
EP2202786A1 (en) | 2010-06-30 |
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