TW200520632A - Focus ring and plasma processing apparatus - Google Patents

Focus ring and plasma processing apparatus

Info

Publication number
TW200520632A
TW200520632A TW093126072A TW93126072A TW200520632A TW 200520632 A TW200520632 A TW 200520632A TW 093126072 A TW093126072 A TW 093126072A TW 93126072 A TW93126072 A TW 93126072A TW 200520632 A TW200520632 A TW 200520632A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
focus ring
ring
processing apparatus
plasma processing
Prior art date
Application number
TW093126072A
Other languages
Chinese (zh)
Other versions
TWI370707B (en
Inventor
Akira Koshiishi
Hideaki Tanaka
Nobuyuki Okayama
Masaaki Miyagawa
Shunsuke Mizukami
Wataru Shimizu
Jun Hirose
Toshikatsu Wakaki
Tomonori Miwa
Jun Ooyabu
Daisuke Hayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200520632A publication Critical patent/TW200520632A/en
Application granted granted Critical
Publication of TWI370707B publication Critical patent/TWI370707B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Abstract

The object of the present invention is to provide a focus ring and a plasma processing apparatus with which the uniformity of the processing within a semiconductor wafer surface is improved and occurrence of the deposition on the rear-surface side of the peripheral-edge part of the semiconductor wafer is reduced as compared to that by prior art. The solution of the present invention is that a loading table 2 for loading a semiconductor wafer W and a focus ring 8 that surrounds the periphery of the semiconductor wafer W loaded on the loading table 2 are provided in a vacuum chamber 1. The focus ring 8 is constituted by a ring-shaped lower member 9, composed of a dielectric and a ring-shaped upper member 10 arranged on the upper part of the lower member 9 and is composed of an electrically conductive material. The upper surface of the outer peripheral side of the upper member 10 is made to be a flat part 10a, whose position is higher than the surface to be processed of the semiconductor wafer W. The inner peripheral part of the flat part 10a is made to be a sloping part 10b that slopes, in such a way that the outer peripheral part is higher than the lower peripheral part.
TW093126072A 2003-09-05 2004-08-30 Focus ring and plasma processing apparatus TW200520632A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003314815 2003-09-05
JP2004055565 2004-02-27

Publications (2)

Publication Number Publication Date
TW200520632A true TW200520632A (en) 2005-06-16
TWI370707B TWI370707B (en) 2012-08-11

Family

ID=34621854

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101115977A TWI488236B (en) 2003-09-05 2004-08-30 Focusing ring and plasma processing device
TW093126072A TW200520632A (en) 2003-09-05 2004-08-30 Focus ring and plasma processing apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW101115977A TWI488236B (en) 2003-09-05 2004-08-30 Focusing ring and plasma processing device

Country Status (4)

Country Link
JP (1) JP5313211B2 (en)
KR (1) KR100576399B1 (en)
CN (2) CN101162689B (en)
TW (2) TWI488236B (en)

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TWI584698B (en) * 2008-07-07 2017-05-21 Tokyo Electron Ltd A temperature control method for a chamber member of a plasma processing apparatus, a chamber member and a substrate stage, and a plasma processing apparatus
TWI714743B (en) * 2016-03-28 2021-01-01 日商東京威力科創股份有限公司 Method for acquiring data indicating electrostatic capacitance

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TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7988814B2 (en) 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
JP2007250967A (en) * 2006-03-17 2007-09-27 Tokyo Electron Ltd Plasma treating apparatus and method, and focus ring
CN101447394B (en) * 2007-11-28 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 Method for improving back pollution of work piece during manufacturing process of semiconductor
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100101729A1 (en) * 2008-10-28 2010-04-29 Applied Materials, Inc. Process kit having reduced erosion sensitivity
JP2010278166A (en) * 2009-05-27 2010-12-09 Tokyo Electron Ltd Annular component for plasma treatment, and plasma treatment device
JP5563347B2 (en) * 2010-03-30 2014-07-30 東京エレクトロン株式会社 Plasma processing apparatus and semiconductor device manufacturing method
JP5741124B2 (en) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 Plasma processing equipment
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
JP5970268B2 (en) * 2012-07-06 2016-08-17 株式会社日立ハイテクノロジーズ Plasma processing apparatus and processing method
JP6853038B2 (en) * 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Single ring design for high yield and reduction of substrate edge defects in ICP plasma processing chamber
JP2015115421A (en) * 2013-12-10 2015-06-22 東京エレクトロン株式会社 Plasma processing apparatus and focus ring
WO2015116245A1 (en) 2014-01-30 2015-08-06 Applied Materials, Inc. Gas confiner assembly for eliminating shadow frame
WO2015116244A1 (en) 2014-01-30 2015-08-06 Applied Materials, Inc. Corner spoiler for improving profile uniformity
CN103811247B (en) * 2014-02-17 2016-04-13 清华大学 For plasma etching focusing ring and there is its plasma etching apparatus
JP5615454B1 (en) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 Focus ring
CN106920725B (en) * 2015-12-24 2018-10-12 中微半导体设备(上海)有限公司 A kind of temperature adjustment device and method of focusing ring
JP6888007B2 (en) * 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Wafer edge ring lifting solution
CN108369922B (en) 2016-01-26 2023-03-21 应用材料公司 Wafer edge ring lifting solution
US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US11251026B2 (en) 2017-03-31 2022-02-15 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
JP6278498B1 (en) * 2017-05-19 2018-02-14 日本新工芯技株式会社 Ring-shaped member manufacturing method and ring-shaped member
US20180334746A1 (en) * 2017-05-22 2018-11-22 Lam Research Corporation Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch
JP6797079B2 (en) * 2017-06-06 2020-12-09 東京エレクトロン株式会社 Plasma processing equipment, plasma control method, and plasma control program
JP6974088B2 (en) * 2017-09-15 2021-12-01 東京エレクトロン株式会社 Plasma processing equipment and plasma processing method
SG11201908445PA (en) * 2017-10-17 2020-05-28 Ulvac Inc Object processing apparatus
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
JP6846384B2 (en) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 Method of controlling high frequency power supply of plasma processing equipment and plasma processing equipment
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
KR102214333B1 (en) 2019-06-27 2021-02-10 세메스 주식회사 Apparatus and method for treating substrate
JP7278160B2 (en) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 Etching method and plasma processing apparatus
WO2021124470A1 (en) * 2019-12-18 2021-06-24 株式会社日立ハイテク Plasma treatment device
JP7365912B2 (en) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 Edge ring and substrate processing equipment
TWI824722B (en) * 2022-09-16 2023-12-01 鴻揚半導體股份有限公司 Focus ring and method for processing semiconductor wafer

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KR100264445B1 (en) * 1993-10-04 2000-11-01 히가시 데쓰로 Plasma treatment equipment
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP4602545B2 (en) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド Shroud for semiconductor workpiece in plasma chamber
JP3531511B2 (en) * 1998-12-22 2004-05-31 株式会社日立製作所 Plasma processing equipment
JP2000208492A (en) * 1999-01-18 2000-07-28 Sony Corp Method and system for tungsten plasma etching
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
TWI272877B (en) * 2001-12-13 2007-02-01 Tokyo Electron Ltd Ring mechanism, and plasma processing device using the ring mechanism
JP2008017090A (en) * 2006-07-05 2008-01-24 Casio Comput Co Ltd Imaging apparatus and electronic zoom method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI584698B (en) * 2008-07-07 2017-05-21 Tokyo Electron Ltd A temperature control method for a chamber member of a plasma processing apparatus, a chamber member and a substrate stage, and a plasma processing apparatus
TWI714743B (en) * 2016-03-28 2021-01-01 日商東京威力科創股份有限公司 Method for acquiring data indicating electrostatic capacitance

Also Published As

Publication number Publication date
CN101162689B (en) 2010-08-18
CN100364064C (en) 2008-01-23
TW201243942A (en) 2012-11-01
TWI370707B (en) 2012-08-11
CN101162689A (en) 2008-04-16
JP2010232694A (en) 2010-10-14
TWI488236B (en) 2015-06-11
KR20050025079A (en) 2005-03-11
KR100576399B1 (en) 2006-05-03
CN1591793A (en) 2005-03-09
JP5313211B2 (en) 2013-10-09

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees