TW201130082A - Focus ring of plasma processing apparatus and plasma processing apparatus having the same - Google Patents

Focus ring of plasma processing apparatus and plasma processing apparatus having the same

Info

Publication number
TW201130082A
TW201130082A TW099129162A TW99129162A TW201130082A TW 201130082 A TW201130082 A TW 201130082A TW 099129162 A TW099129162 A TW 099129162A TW 99129162 A TW99129162 A TW 99129162A TW 201130082 A TW201130082 A TW 201130082A
Authority
TW
Taiwan
Prior art keywords
processing apparatus
focus ring
plasma processing
wafer
chuck
Prior art date
Application number
TW099129162A
Other languages
Chinese (zh)
Inventor
Geun-Woo Park
Seong Jae Lee
Yun Ju Ra
Original Assignee
Top Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Top Eng Co Ltd filed Critical Top Eng Co Ltd
Publication of TW201130082A publication Critical patent/TW201130082A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a focus ring of a plasma processing apparatus and a plasma processing apparatus having the same. More particularly, the present invention relates to a focus ring of a plasma processing apparatus and a plasma processing apparatus having the same that are capable of fixing a wafer or a wafer tray receiving the wafer by effectively loading and unloading the wafer or the wafer tray in a plasma processing apparatus that performs an etching process or a deposition process to process the wafer in a plasma state. The present invention provides a plasma processing apparatus that includes: a process chamber; a chuck provided in the process chamber and vertically actuated; a focus ring mounted on the outer periphery of the chuck; and a clamp for fixing a wafer or a wafer tray seated on the chuck to the chuck, wherein the focus ring is formed by a combination of a first focus ring fixed to a focus ring base and a second focus ring fixed or seated onto the outer periphery of the chuck and when the chuck moves down, the second focus ring moves down further than the first focus ring.
TW099129162A 2009-12-30 2010-08-30 Focus ring of plasma processing apparatus and plasma processing apparatus having the same TW201130082A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090134196A KR101174816B1 (en) 2009-12-30 2009-12-30 Focus Ring of Plasma Processing Apparatus and Plasma Processing Apparatus Having the Same

Publications (1)

Publication Number Publication Date
TW201130082A true TW201130082A (en) 2011-09-01

Family

ID=44216426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099129162A TW201130082A (en) 2009-12-30 2010-08-30 Focus ring of plasma processing apparatus and plasma processing apparatus having the same

Country Status (3)

Country Link
KR (1) KR101174816B1 (en)
CN (1) CN102117726A (en)
TW (1) TW201130082A (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094166B (en) * 2011-10-31 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 Wafer carrying device and semiconductor processing equipment comprising the same
CN103165375B (en) * 2011-12-09 2016-06-01 中国科学院微电子研究所 Semiconductor chamber preforming device
KR102031666B1 (en) * 2012-11-08 2019-10-14 엘지이노텍 주식회사 Semiconductor etching apparatus
CN103247507A (en) * 2013-04-08 2013-08-14 上海华力微电子有限公司 Compound plasma focusing ring and method for replacing same
CN104124127A (en) * 2013-04-27 2014-10-29 北京北方微电子基地设备工艺研究中心有限责任公司 Pallet and plasma processing equipment
CN104134624B (en) * 2013-05-02 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 Pallet and plasma processing device
CN104347459B (en) * 2013-08-02 2017-12-19 北京北方华创微电子装备有限公司 A kind of cover plate, bogey and plasma processing device
CN104726830B (en) * 2013-12-24 2017-06-30 宁波江丰电子材料股份有限公司 The correcting device of focusing ring
KR101504880B1 (en) * 2014-11-14 2015-03-20 주식회사 기가레인 Unit for supporting substrate
KR101505625B1 (en) * 2014-11-19 2015-03-26 주식회사 기가레인 Wafer holding apparatus and plasma treating apparatus using the same
CN105762095B (en) * 2014-12-18 2018-08-24 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
CN107093569B (en) * 2016-02-18 2019-07-05 北京北方华创微电子装备有限公司 A kind of wafer locating device and reaction chamber
JP7138582B2 (en) * 2018-05-24 2022-09-16 東京エレクトロン株式会社 Antenna, plasma processing apparatus and plasma processing method
JP7115942B2 (en) * 2018-09-06 2022-08-09 東京エレクトロン株式会社 PLACE, SUBSTRATE PROCESSING APPARATUS, EDGE RING AND TRANSFER METHOD OF EDGE RING
JP6960390B2 (en) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 Power supply structure and plasma processing equipment
KR101998202B1 (en) * 2019-04-01 2019-07-10 (주)원세미콘 Plasma focus ring for semiconductor etching apparatus and manufacturing method of the same
KR102277809B1 (en) 2019-07-15 2021-07-14 세메스 주식회사 Unit for supporting substrate and system for treating substrate with the unit
KR102077974B1 (en) * 2019-08-29 2020-02-14 주식회사 기가레인 Plasma treatment device including a focus ring with improved plasma treatment vertical angle
CN112435913B (en) * 2020-11-23 2024-04-12 北京北方华创微电子装备有限公司 Semiconductor device and lower electrode thereof
KR102484268B1 (en) 2021-02-25 2023-01-04 (주)아이씨디 Plasma Processing Device
KR102572318B1 (en) 2021-07-06 2023-08-29 (주)아이씨디 Plasma Processing Device
CN114559568A (en) * 2022-03-11 2022-05-31 江苏京创先进电子科技有限公司 Ring removing device for TAIKO wafer processing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
US5552124A (en) * 1994-06-22 1996-09-03 Applied Materials, Inc. Stationary focus ring for plasma reactor
JP3424903B2 (en) * 1997-01-23 2003-07-07 東京エレクトロン株式会社 Plasma processing equipment
KR20090102257A (en) * 2008-03-25 2009-09-30 (주)타이닉스 Inductively coupled plasma etching apparatus
JP5657262B2 (en) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 Plasma processing equipment

Also Published As

Publication number Publication date
KR101174816B1 (en) 2012-08-17
KR20110077575A (en) 2011-07-07
CN102117726A (en) 2011-07-06

Similar Documents

Publication Publication Date Title
TW201130082A (en) Focus ring of plasma processing apparatus and plasma processing apparatus having the same
WO2012125560A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
TW201612974A (en) Proximity contact cover ring for plasma dicing
WO2012057987A3 (en) Deposition ring and electrostatic chuck for physical vapor deposition chamber
WO2012087737A3 (en) Variable-density plasma processing of semiconductor substrates
WO2012166264A3 (en) Dynamic ion radical sieve and ion radical aperture for an inductively coupled plasma (icp) reactor
TW200741860A (en) Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
WO2009063620A1 (en) Plasma dicing apparatus and semiconductor chip manufacturing method
WO2014127027A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
WO2009140153A3 (en) Apparatus for etching semiconductor wafers
TW200520632A (en) Focus ring and plasma processing apparatus
WO2013098702A3 (en) Mixed mode pulsing etching in plasma processing systems
WO2012092064A8 (en) Wafer processing with carrier extension
TW200715449A (en) Batch deposition tool and compressed boat
WO2012170150A3 (en) Selective deposition of polymer films on bare silicon instead of oxide surface
WO2012118955A3 (en) Apparatus and process for atomic layer deposition
JP2011521453A5 (en)
TW200951648A (en) Photoresist stripping method and apparatus
TW200717648A (en) Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
WO2012011005A3 (en) Device for holding wafer shaped articles
WO2014137905A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
WO2013067201A3 (en) System architecture for plasma processing solar wafers
WO2008082923A3 (en) Methods and apparatus for wafer edge processing
JP2009099897A (en) Plasma deposition apparatus
WO2008114753A1 (en) Substrate placing table, substrate processing apparatus and method for machining surface of substrate placing table