SG11201908445PA - Object processing apparatus - Google Patents
Object processing apparatusInfo
- Publication number
- SG11201908445PA SG11201908445PA SG11201908445PA SG11201908445PA SG11201908445PA SG 11201908445P A SG11201908445P A SG 11201908445PA SG 11201908445P A SG11201908445P A SG 11201908445PA SG 11201908445P A SG11201908445P A SG 11201908445PA SG 11201908445P A SG11201908445P A SG 11201908445PA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- object processing
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017201074 | 2017-10-17 | ||
PCT/JP2018/038294 WO2019078149A1 (en) | 2017-10-17 | 2018-10-15 | Apparatus for treating object to be treated |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201908445PA true SG11201908445PA (en) | 2020-05-28 |
Family
ID=66173680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201908445PA SG11201908445PA (en) | 2017-10-17 | 2018-10-15 | Object processing apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210305070A1 (en) |
JP (1) | JP6768946B2 (en) |
KR (1) | KR102215873B1 (en) |
CN (1) | CN110402481B (en) |
SG (1) | SG11201908445PA (en) |
TW (1) | TWI708276B (en) |
WO (1) | WO2019078149A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7190495B2 (en) | 2018-09-03 | 2022-12-15 | 株式会社Preferred Networks | Inference method, inference device, model generation method, and learning device |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205719A (en) * | 1983-05-09 | 1984-11-21 | Matsushita Electric Ind Co Ltd | Dry-etching apparatus |
JPH06283472A (en) * | 1993-03-29 | 1994-10-07 | Tokyo Electron Ltd | Plasma device and plasma processing method |
KR20010089376A (en) * | 1998-10-29 | 2001-10-06 | 조셉 제이. 스위니 | Apparatus for coupling power through a workpiece in a semiconductor wafer processing system |
JP2003017466A (en) * | 1999-01-28 | 2003-01-17 | Nec Corp | Particle removal system |
US6228438B1 (en) * | 1999-08-10 | 2001-05-08 | Unakis Balzers Aktiengesellschaft | Plasma reactor for the treatment of large size substrates |
TW464879B (en) * | 2000-01-28 | 2001-11-21 | Nippon Electric Co | Dust particle removing method and apparatus, impurity detecting method and system |
US7850174B2 (en) * | 2003-01-07 | 2010-12-14 | Tokyo Electron Limited | Plasma processing apparatus and focus ring |
KR100752800B1 (en) * | 2003-03-12 | 2007-08-29 | 동경 엘렉트론 주식회사 | Substrate holding structure for semiconductor processing, and plasma processing device |
TWI488236B (en) * | 2003-09-05 | 2015-06-11 | Tokyo Electron Ltd | Focusing ring and plasma processing device |
JP4398802B2 (en) | 2004-06-17 | 2010-01-13 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP4597894B2 (en) * | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
CN101512736A (en) * | 2006-09-11 | 2009-08-19 | 株式会社爱发科 | Dry etching method |
JP4992389B2 (en) * | 2006-11-06 | 2012-08-08 | 東京エレクトロン株式会社 | Mounting apparatus, plasma processing apparatus, and plasma processing method |
JP5014166B2 (en) | 2007-02-13 | 2012-08-29 | 株式会社日立ハイテクノロジーズ | Plasma processing method and plasma processing apparatus |
JP5294669B2 (en) * | 2008-03-25 | 2013-09-18 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2010278166A (en) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | Annular component for plasma treatment, and plasma treatment device |
JP2011228436A (en) | 2010-04-19 | 2011-11-10 | Hitachi High-Technologies Corp | Plasma processing apparatus and plasma processing method |
JP5848760B2 (en) * | 2010-06-22 | 2016-01-27 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Organic electroluminescent device with separating foil |
JP6283472B2 (en) | 2013-04-30 | 2018-02-21 | グンゼ株式会社 | Coating device |
CN104701157A (en) * | 2015-03-31 | 2015-06-10 | 上海华力微电子有限公司 | Plasma etching apparatus with top disc for reducing edge etching rate |
-
2018
- 2018-10-15 CN CN201880017568.0A patent/CN110402481B/en active Active
- 2018-10-15 SG SG11201908445PA patent/SG11201908445PA/en unknown
- 2018-10-15 WO PCT/JP2018/038294 patent/WO2019078149A1/en active Application Filing
- 2018-10-15 JP JP2019521160A patent/JP6768946B2/en active Active
- 2018-10-15 US US16/495,650 patent/US20210305070A1/en not_active Abandoned
- 2018-10-15 KR KR1020197025907A patent/KR102215873B1/en active IP Right Grant
- 2018-10-16 TW TW107136398A patent/TWI708276B/en active
Also Published As
Publication number | Publication date |
---|---|
CN110402481B (en) | 2023-07-21 |
WO2019078149A1 (en) | 2019-04-25 |
KR102215873B1 (en) | 2021-02-16 |
CN110402481A (en) | 2019-11-01 |
US20210305070A1 (en) | 2021-09-30 |
JP6768946B2 (en) | 2020-10-14 |
JPWO2019078149A1 (en) | 2019-11-21 |
TWI708276B (en) | 2020-10-21 |
TW201923819A (en) | 2019-06-16 |
KR20190112800A (en) | 2019-10-07 |
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