SG11201912655XA - Plasma processing apparatus - Google Patents
Plasma processing apparatusInfo
- Publication number
- SG11201912655XA SG11201912655XA SG11201912655XA SG11201912655XA SG11201912655XA SG 11201912655X A SG11201912655X A SG 11201912655XA SG 11201912655X A SG11201912655X A SG 11201912655XA SG 11201912655X A SG11201912655X A SG 11201912655XA SG 11201912655X A SG11201912655X A SG 11201912655XA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- plasma processing
- plasma
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/42—Balance/unbalance networks
- H03H7/425—Balance-balance networks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/023603 WO2019003309A1 (en) | 2017-06-27 | 2017-06-27 | Plasma treatment device |
PCT/JP2017/023611 WO2019003312A1 (en) | 2017-06-27 | 2017-06-27 | Plasma treatment device |
JP2018017549 | 2018-02-02 | ||
PCT/JP2018/024145 WO2019004183A1 (en) | 2017-06-27 | 2018-06-26 | Plasma treatment device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201912655XA true SG11201912655XA (en) | 2020-01-30 |
Family
ID=64741824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201912655XA SG11201912655XA (en) | 2017-06-27 | 2018-06-26 | Plasma processing apparatus |
Country Status (9)
Country | Link |
---|---|
US (1) | US20200126763A1 (en) |
EP (1) | EP3648553B1 (en) |
JP (2) | JP6564556B2 (en) |
KR (1) | KR102327136B1 (en) |
CN (1) | CN110800378B (en) |
PL (1) | PL3648553T3 (en) |
SG (1) | SG11201912655XA (en) |
TW (1) | TWI677907B (en) |
WO (1) | WO2019004183A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3648552B1 (en) * | 2017-06-27 | 2022-04-13 | Canon Anelva Corporation | Plasma treatment device |
KR102421625B1 (en) * | 2017-06-27 | 2022-07-19 | 캐논 아네르바 가부시키가이샤 | Plasma processing device |
EP3648551B1 (en) | 2017-06-27 | 2021-08-18 | Canon Anelva Corporation | Plasma treatment device |
WO2019003312A1 (en) * | 2017-06-27 | 2019-01-03 | キヤノンアネルバ株式会社 | Plasma treatment device |
KR102439024B1 (en) * | 2018-06-26 | 2022-09-02 | 캐논 아네르바 가부시키가이샤 | Plasma processing apparatus, plasma processing method, program, and memory medium |
US11535532B1 (en) * | 2020-07-17 | 2022-12-27 | Dmitry Medvedev | System and method of water purification and hydrogen peroxide generation by plasma |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
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BE806098A (en) * | 1973-03-28 | 1974-02-01 | Siemens Ag | PROCESS FOR MANUFACTURING SILICON OR OTHER VERY PURE SEMI-CONDUCTIVE MATERIAL |
US4887005A (en) * | 1987-09-15 | 1989-12-12 | Rough J Kirkwood H | Multiple electrode plasma reactor power distribution system |
US4871421A (en) * | 1988-09-15 | 1989-10-03 | Lam Research Corporation | Split-phase driver for plasma etch system |
JPH02156080A (en) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | Sputtering device |
JPH02156081A (en) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | Sputtering device |
JPH02156083A (en) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | Sputtering device |
US5354413A (en) * | 1993-03-18 | 1994-10-11 | Advanced Micro Devices, Inc. | Electrode position controller for a semiconductor etching device |
US5989999A (en) * | 1994-11-14 | 1999-11-23 | Applied Materials, Inc. | Construction of a tantalum nitride film on a semiconductor wafer |
DE19615735A1 (en) * | 1996-04-20 | 1997-10-23 | Ruediger Haaga Gmbh | Device for sterilizing the inner surfaces of pressure-sensitive containers |
JPH10134997A (en) * | 1996-10-24 | 1998-05-22 | Samsung Electron Co Ltd | Plasma processing device, in which discharge due to secondary electric potential is eliminated |
KR100252210B1 (en) * | 1996-12-24 | 2000-04-15 | 윤종용 | Dry etching facility for manufacturing semiconductor devices |
GB9714142D0 (en) * | 1997-07-05 | 1997-09-10 | Surface Tech Sys Ltd | An arrangement for the feeding of RF power to one or more antennae |
JP3148177B2 (en) * | 1998-04-27 | 2001-03-19 | ニチメン電子工研株式会社 | Plasma processing equipment |
US6818103B1 (en) * | 1999-10-15 | 2004-11-16 | Advanced Energy Industries, Inc. | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
US7445690B2 (en) * | 2002-10-07 | 2008-11-04 | Tokyo Electron Limited | Plasma processing apparatus |
DE10306347A1 (en) * | 2003-02-15 | 2004-08-26 | Hüttinger Elektronik GmbH & Co. KG | Controlling supply of power from AC supply to two consumers in plasma process, by adjusting supplied power if actual power deviates from set value |
JP3575011B1 (en) * | 2003-07-04 | 2004-10-06 | 村田 正義 | Plasma surface treatment apparatus and plasma surface treatment method |
JP4658506B2 (en) * | 2004-03-31 | 2011-03-23 | 浩史 滝川 | Power supply circuit for generating pulsed arc plasma and pulsed arc plasma processing apparatus |
JP2006319043A (en) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | Plasma processor |
CN101512736A (en) * | 2006-09-11 | 2009-08-19 | 株式会社爱发科 | Dry etching method |
TWI440405B (en) * | 2007-10-22 | 2014-06-01 | New Power Plasma Co Ltd | Capacitively coupled plasma reactor |
JP5294669B2 (en) * | 2008-03-25 | 2013-09-18 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2008294465A (en) * | 2008-07-31 | 2008-12-04 | Masayoshi Murata | Current inlet terminal, plasma surface treatment device with current inlet terminal and plasma surface treatment method |
JP4547711B2 (en) * | 2008-10-10 | 2010-09-22 | 村田 正義 | High frequency plasma CVD apparatus and high frequency plasma CVD method |
JP2010255061A (en) * | 2009-04-27 | 2010-11-11 | Canon Anelva Corp | Sputtering apparatus and sputtering treatment method |
JP2009302566A (en) * | 2009-09-16 | 2009-12-24 | Masayoshi Murata | Plasma surface processor with balanced-unbalanced transformer |
JP5579729B2 (en) * | 2009-09-29 | 2014-08-27 | 株式会社アルバック | Plasma etching equipment |
US20130017315A1 (en) * | 2011-07-15 | 2013-01-17 | Applied Materials, Inc. | Methods and apparatus for controlling power distribution in substrate processing systems |
JP2013098177A (en) * | 2011-10-31 | 2013-05-20 | Semes Co Ltd | Substrate processing device and impedance matching method |
US20130337657A1 (en) * | 2012-06-19 | 2013-12-19 | Plasmasi, Inc. | Apparatus and method for forming thin protective and optical layers on substrates |
JP2014049541A (en) * | 2012-08-30 | 2014-03-17 | Mitsubishi Heavy Ind Ltd | Thin film manufacturing device and electrode voltage regulating method thereof |
JP2013139642A (en) * | 2013-04-02 | 2013-07-18 | Canon Anelva Corp | Plasma treatment apparatus applied for sputtering film forming |
KR101768928B1 (en) * | 2013-12-25 | 2017-08-17 | 캐논 아네르바 가부시키가이샤 | Substrate processing method and method for producing semiconductor device |
GB201502453D0 (en) * | 2015-02-13 | 2015-04-01 | Spts Technologies Ltd | Plasma producing apparatus |
JP6473974B2 (en) * | 2016-09-30 | 2019-02-27 | パナソニックIpマネジメント株式会社 | Plasma processing apparatus and plasma processing method |
JP6524536B2 (en) * | 2016-11-09 | 2019-06-05 | パナソニックIpマネジメント株式会社 | Plasma processing apparatus and plasma processing method |
KR102421625B1 (en) * | 2017-06-27 | 2022-07-19 | 캐논 아네르바 가부시키가이샤 | Plasma processing device |
-
2018
- 2018-06-26 CN CN201880042477.2A patent/CN110800378B/en active Active
- 2018-06-26 KR KR1020207001383A patent/KR102327136B1/en active IP Right Grant
- 2018-06-26 EP EP18823378.7A patent/EP3648553B1/en active Active
- 2018-06-26 PL PL18823378T patent/PL3648553T3/en unknown
- 2018-06-26 TW TW107121808A patent/TWI677907B/en active
- 2018-06-26 JP JP2019526922A patent/JP6564556B2/en active Active
- 2018-06-26 SG SG11201912655XA patent/SG11201912655XA/en unknown
- 2018-06-26 WO PCT/JP2018/024145 patent/WO2019004183A1/en unknown
-
2019
- 2019-05-29 JP JP2019100707A patent/JP6714127B2/en active Active
- 2019-12-19 US US16/720,087 patent/US20200126763A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2019004183A1 (en) | 2019-01-03 |
JP2019194986A (en) | 2019-11-07 |
PL3648553T3 (en) | 2021-09-13 |
EP3648553B1 (en) | 2021-05-19 |
KR102327136B1 (en) | 2021-11-15 |
JP6564556B2 (en) | 2019-08-21 |
US20200126763A1 (en) | 2020-04-23 |
EP3648553A4 (en) | 2020-06-24 |
CN110800378B (en) | 2021-12-28 |
KR20200018656A (en) | 2020-02-19 |
JP6714127B2 (en) | 2020-06-24 |
CN110800378A (en) | 2020-02-14 |
TWI677907B (en) | 2019-11-21 |
TW201905972A (en) | 2019-02-01 |
JPWO2019004183A1 (en) | 2019-11-07 |
EP3648553A1 (en) | 2020-05-06 |
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