JP3148177B2 - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- JP3148177B2 JP3148177B2 JP11682398A JP11682398A JP3148177B2 JP 3148177 B2 JP3148177 B2 JP 3148177B2 JP 11682398 A JP11682398 A JP 11682398A JP 11682398 A JP11682398 A JP 11682398A JP 3148177 B2 JP3148177 B2 JP 3148177B2
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- Prior art keywords
- frequency coil
- plasma
- frequency
- coil
- vacuum vessel
- Prior art date
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- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ、液
晶ディスプレイプ用ガラス基板、切削工具、並びに磁気
記録媒体のような被処理体の表面を、プラズマを利用し
て処理、例えば、エッチング、成膜、コーティング、ア
ッシング、するためのプラズマ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the processing of the surface of an object to be processed, such as a semiconductor wafer, a glass substrate for a liquid crystal display, a cutting tool, and a magnetic recording medium, using plasma, for example, etching, forming, The present invention relates to a plasma processing apparatus for performing film, coating, and ashing.
【０００２】[0002]
【従来の技術】従来、このようなプラズマ処理装置の代
表的なものとして、高周波コイルによる高周波放電によ
り処理ガスのプラズマを発生させる装置が知られてい
る。そして、このような誘導型のプラズマ処理装置は、
高周波コイルが真空容器の外に配置されている形式のも
のと、中に配置されている形式のものとに大別されてい
る。前者は、真空容器を誘電体で形成するか、または、
金属のような導電体で形成した場合には、真空容器と高
周波コイルとの間に絶縁のための誘電体層を介在させる
必要がある。この結果、高周波コイルとプラズマとの間
には、真空容器が存在するので、これらの間の結合は弱
くなり、プラズマ発生効率は低くなる。また、上述した
ように、真空容器を誘電体で形成したり、例え金属で形
成しても、誘電体層を必要としたりして、経済的ではな
い。2. Description of the Related Art Conventionally, as a typical example of such a plasma processing apparatus, an apparatus for generating a plasma of a processing gas by high-frequency discharge by a high-frequency coil has been known. And such an induction type plasma processing apparatus is
The high-frequency coil is roughly classified into a type in which the high-frequency coil is disposed outside the vacuum vessel and a type in which the high-frequency coil is disposed inside. In the former, the vacuum container is formed of a dielectric, or
When formed of a conductor such as a metal, it is necessary to interpose a dielectric layer for insulation between the vacuum vessel and the high-frequency coil. As a result, since a vacuum vessel exists between the high-frequency coil and the plasma, the coupling therebetween is weakened, and the plasma generation efficiency is reduced. Further, as described above, even if the vacuum container is formed of a dielectric material, or even if it is formed of a metal, it is not economical because a dielectric layer is required.
【０００３】[0003]
【発明が解決しようとする課題】一方、高周波コイルを
真空容器内に配置した形式のものは、上記欠点が生じな
い。しかし、高周波コイルに沿って高周波的に生じる電
圧降下により、真空容器と高周波コイルとの間に電圧が
誘起され、この結果、一部の高周波電流が高周波コイル
から真空容器に流れてしまう。このような電流は常時一
定ではなくプラズマ処理中に変動するのでプラズマも、
この電流により不安定になり、プラズマ密度が均一では
なくなる。従って、被処理体の均一な処理が行われず、
例えば、成膜の場合には、不均一な膜厚となる。また、
このような真空容器に流れる高周波電流により発生され
るイオン等により真空容器の内面がスパッターされて、
スパッター物質、粒子がプラズマ中に混入し、プラズマ
処理の純度が低下する。On the other hand, the type in which the high-frequency coil is disposed in the vacuum vessel does not have the above-mentioned disadvantage. However, a voltage drop generated at a high frequency along the high-frequency coil induces a voltage between the vacuum vessel and the high-frequency coil, and as a result, some high-frequency current flows from the high-frequency coil to the vacuum vessel. Since such current is not always constant and fluctuates during plasma processing, plasma
This current causes instability and non-uniform plasma density. Therefore, uniform processing of the object to be processed is not performed,
For example, in the case of film formation, the film thickness becomes uneven. Also,
The inner surface of the vacuum vessel is sputtered by ions or the like generated by a high-frequency current flowing in such a vacuum vessel,
Sputter substances and particles are mixed into the plasma, and the purity of the plasma treatment is reduced.
【０００４】従って、本発明は上記事情に基づいて案出
されたものであり、本発明の目的は、高周波コイルを真
空容器内に設けた形式でありながら、高周波コイルから
真空容器に高周波電流が流れるのを防止して、均一かつ
不純物の混入の無い処理を被処理体に対して行うことが
できるプラズマ処理装置を提供することである。Accordingly, the present invention has been devised based on the above circumstances, and an object of the present invention is to provide a type in which a high-frequency coil is provided in a vacuum vessel, but a high-frequency current flows from the high-frequency coil to the vacuum vessel. An object of the present invention is to provide a plasma processing apparatus capable of performing a process that is uniform and free of impurities from being mixed to a workpiece by preventing the workpiece from flowing.
【０００５】[0005]
【課題を解決するための手段】本発明の一態様に係わる
プラズマ処理装置は、プラズマを使用して処理される被
処理体が収容され、少くとも一部が導電性材料で形成さ
れた真空容器と、この容器中に処理ガスを供給する手段
と、この真空容器内に配設され、前記処理ガスのプラズ
マを発生させる高周波コイルと、この高周波コイルに高
周波電流を供給する給電回路とを具備し、この給電回路
は、高周波コイルから真空容器に高周波電流が流れるの
を防止するようにバラン回路を有することを特徴とす
る。According to one embodiment of the present invention, there is provided a plasma processing apparatus in which an object to be processed using plasma is accommodated and at least a part of which is formed of a conductive material. Means for supplying a processing gas into the container, a high-frequency coil disposed in the vacuum container to generate plasma of the processing gas, and a power supply circuit for supplying a high-frequency current to the high-frequency coil. The power supply circuit has a balun circuit so as to prevent a high-frequency current from flowing from the high-frequency coil to the vacuum vessel.
【０００６】好ましくは、高周波コイルが、真空容器内
に発生されるプラズマに晒されてコイルがプラズマによ
り生成された粒子によりスパッターされるのを防止する
ように、セラミック製の鞘で覆われている。この結果、
より均一で不純物の混入の無い処理を被処理体に対して
行うことができる。また、高周波コイルの寿命も長くな
る。[0006] Preferably, the high frequency coil is covered with a ceramic sheath so as to be exposed to the plasma generated in the vacuum vessel to prevent the coil from being sputtered by particles generated by the plasma. . As a result,
It is possible to perform more uniform treatment on the object to be processed without contamination of impurities. In addition, the life of the high-frequency coil is prolonged.
【０００７】[0007]
【発明の実施の形態】以下に本発明の一実施例に係わる
プラズマ処理装置を添付図面を参照して説明する。図
中、符号１０は、ステンレススチール、アルミ等の金属
よりなる導電性材料で形成された真空容器を示す。この
真空容器１０の周壁の一部には、図示しない処理ガス
源、例えば、エッチングガス源に接続されて、真空容器
１０内に処理ガスを供給するガス供給ポート１１が設け
られている。また、真空容器１０の底壁の内面には、電
気絶縁板１２が装着されており、この上には、被処理
体、例えば、半導体ウエハ１３を載置するためのサセプ
タ１４が真空容器１０とは電気的に絶縁されて設けられ
ている。また、真空容器１０の底壁には、図示しない真
空装置に接続されて、真空容器内を一定の圧力に減圧可
能な排気ポート１５が設けられている。そして、真空容
器１０内のサセプタ１４の上方には、これと同軸的に、
高周波コイル１６が配設されている。この高周波コイル
１６は、後で詳述する給電回路１７を介して、高周波電
源１８に接続されている。この高周波電源１８は、例え
ば、１３．５６ＭＨｚの高周波電流を高周波コイル１６
に供給して、真空容器１０内の半導体ウエハ１３の上方
に処理ガスのプラズマを発生させる。DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma processing apparatus according to one embodiment of the present invention will be described below with reference to the accompanying drawings. In the drawing, reference numeral 10 denotes a vacuum container formed of a conductive material made of a metal such as stainless steel or aluminum. A gas supply port 11 that is connected to a processing gas source (not shown), for example, an etching gas source and supplies a processing gas into the vacuum container 10 is provided on a part of the peripheral wall of the vacuum container 10. An electric insulating plate 12 is mounted on the inner surface of the bottom wall of the vacuum container 10, and a susceptor 14 for mounting an object to be processed, for example, a semiconductor wafer 13, is mounted on the electric insulating plate 12. Are provided electrically insulated. The bottom wall of the vacuum vessel 10 is provided with an exhaust port 15 connected to a vacuum device (not shown) and capable of reducing the pressure inside the vacuum vessel to a constant pressure. Then, above the susceptor 14 in the vacuum vessel 10, coaxially therewith,
A high frequency coil 16 is provided. The high-frequency coil 16 is connected to a high-frequency power supply 18 via a power supply circuit 17 described later in detail. The high-frequency power supply 18 supplies, for example, a high-frequency current of 13.56 MHz to the high-frequency coil 16.
To generate a plasma of a processing gas above the semiconductor wafer 13 in the vacuum vessel 10.
【０００８】前記高周波コイル１６は、好ましくは、金
属フレキシブル・チューブや網組線のような可撓性のあ
る部材により形成された１ターンのコイルにより構成さ
れており、図３に示すように中空となっている。この高
周波コイルは、真空容器１０内では、処理ガスに直接晒
されないようにセラミックで形成された鞘１９で覆われ
ている。換言すれば、処理容器１０内には、サセプタ１
４と同軸的に鞘１９が配設されており、この鞘１９中に
高周波コイルが挿入されている。この、セラミック製の
鞘１９は、例えば、溶融石英やアルミナのように、化学
的に安定でかつイオン衝撃によるスパッタリング率の低
い材料で、好ましくは、形成されている。このようなセ
ラミック製の鞘１９中に、高周波コイル１６を収容する
ためには、例えば、上述したように、高周波コイル１６
を可撓性のある部材で構成し、予め形成された鞘１９に
高周波コイル１６を挿入しても、また、高周波コイル１
６の表面にセラミック材を塗布し、これを焼結させるよ
うにしても良い。この鞘１９は高周波コイル１６と接触
していると放電が生じて破損する恐れがあるので、好ま
しくは、これの内面が高周波コイル１６の外面と接触し
ないように、鞘１９の内径は、高周波コイル１６の外形
よりも少し大きく設定されている。この好ましい実施の
形態では、使用中に高周波コイル１６は、これが過度に
加熱されるのを防止するために、上述したように中空と
なっており、この中を冷媒、例えば冷却水が循環可能と
なっている。このような冷媒は、高周波コイル１６と鞘
１９との間の間隙を流すようにしても良いし、また、併
用しても良い。The high-frequency coil 16 is preferably constituted by a one-turn coil formed of a flexible member such as a metal flexible tube or a braided wire, and as shown in FIG. It has become. This high-frequency coil is covered with a sheath 19 made of ceramic in the vacuum vessel 10 so as not to be directly exposed to the processing gas. In other words, the susceptor 1 is provided inside the processing container 10.
A sheath 19 is arranged coaxially with 4, and a high-frequency coil is inserted into the sheath 19. The ceramic sheath 19 is preferably formed of a material that is chemically stable and has a low sputtering rate due to ion bombardment, such as fused quartz or alumina. In order to house the high-frequency coil 16 in such a ceramic sheath 19, for example, as described above, the high-frequency coil 16
Is formed of a flexible member, and the high-frequency coil 16 is inserted into the sheath 19 formed in advance.
Alternatively, a ceramic material may be applied to the surface of No. 6 and sintered. When the sheath 19 is in contact with the high-frequency coil 16, there is a possibility that the sheath may be damaged by electric discharge. Therefore, preferably, the inner diameter of the sheath 19 is set so that the inner surface thereof does not contact the outer surface of the high-frequency coil 16. The size is set slightly larger than the outer shape of No. 16. In this preferred embodiment, during use, the high frequency coil 16 is hollow as described above to prevent it from being overheated, through which a coolant, for example, cooling water, can circulate. Has become. Such a refrigerant may flow through the gap between the high-frequency coil 16 and the sheath 19, or may be used together.
【０００９】このような構成のプラズマ処理装置におい
ては、例えば、処理ガスとしてエッチングガスを減圧し
た真空容器１０内に供給し、高周波コルル１６に高周波
電流を流すことにより、エッチングガスによるプラズマ
が半導体ウエハ１３の上方に発生され、このプラズマに
より生成されたイオン、ラジカル等によりウエハのエッ
チングが行われる。In the plasma processing apparatus having such a configuration, for example, an etching gas is supplied as a processing gas into the vacuum chamber 10 in which the pressure is reduced, and a high-frequency current is supplied to the high-frequency coil 16 so that the plasma generated by the etching gas is applied to the semiconductor wafer. The wafer is etched by ions, radicals, and the like generated above the plasma 13 and generated by the plasma.
【００１０】尚、本発明のプラズマ処理装置として、エ
ッチング装置を例として説明したが、他の装置、例え
ば、成膜、コーティング、もしくはアッシングのための
装置として適用できる。Although the etching apparatus has been described as an example of the plasma processing apparatus of the present invention, it can be applied to other apparatuses, for example, an apparatus for film formation, coating or ashing.
【００１１】前記給電回路１７は、図４に示すように、
後段側が前記高周波コイル１６に接続された整合回路２
０と、この整合回路２０の前段側と高周波電源１８との
間に接続されたバラン回路２１とにより構成されてい
る。この整合回路２０は、この分野では良く知られた構
成をしており、夫々がコイルと可変容量とを有する入力
ライン２２ａと、出力ライン２２ｂとを有し、高周波電
源１８から供給される高周波電流は、矢印で示すよう
に、入力ライン２２ａから高周波コイル１６を通って出
力ライン２２ｂに流れる。前記バラン回路２１は、図５
に示すように、リング状の磁性体２３と、この磁性体２
１に巻回された一次コイル２４ａと二次コイル２４ｂと
からなっている。これらコイル２４ａ，２４ｂは、一次
コイル２４ａを流れる電流と、二次コイル２４ｂを流れ
る電流とが、磁気回路中に作る磁場が互いに打ち消す合
うように、ほぼ同じ巻き数で反対方向に巻かれている。
これら一次コイル２４ａ並びに二次コイル２４ｂの後端
側は高周波電源１８に接続され、また、前端側は、夫々
入力ライン２２ａ並びに出力ライン２２ｂに接続されて
いる。[0011] As shown in FIG.
Matching circuit 2 whose rear stage is connected to high-frequency coil 16
0 and a balun circuit 21 connected between the high-frequency power supply 18 and the preceding stage of the matching circuit 20. The matching circuit 20 has a well-known configuration in this field. The matching circuit 20 has an input line 22a having a coil and a variable capacitor, and an output line 22b. Flows from the input line 22a through the high-frequency coil 16 to the output line 22b as indicated by the arrow. The balun circuit 21 is configured as shown in FIG.
As shown in the figure, a ring-shaped magnetic body 23 and this magnetic body 2
It comprises a primary coil 24a and a secondary coil 24b wound around one. The coils 24a and 24b are wound in opposite directions with substantially the same number of turns so that the current flowing through the primary coil 24a and the current flowing through the secondary coil 24b cancel each other out in the magnetic circuit. .
The rear ends of the primary coil 24a and the secondary coil 24b are connected to the high-frequency power supply 18, and the front ends are connected to the input line 22a and the output line 22b, respectively.
【００１２】このような構成の装置において、図４に示
すように、高周波コイル１６に流入する電流をＩ1 、高
周波コイル１６から流出する電流をＩ2 、そして、高周
波コイル１６から真空容器１０に流れる電流Ｉ3 とし、
高周波電流のバランスを考えると次式が成立する。In the apparatus having such a configuration, as shown in FIG. 4, the current flowing into the high-frequency coil 16 is I 1 , the current flowing out of the high-frequency coil 16 is I 2 , and The flowing current I 3
Considering the balance of the high-frequency current, the following equation holds.
【００１３】Ｉ1 ＝ Ｉ2 ＋ Ｉ3 そこで、バラン回路２１が高周波電源１８と、整合回路
２０との間に設けられていることにより、若し、Ｉ3 ≠
０なら、一次コイル２４ａと二次コイル２４ｂとが作る
インピーダンスが大きくなり、コイル電流は小さくな
る。Ｉ3 ＝０の場合に、このインピーダンスが最小とな
り、Ｉ1 ＝ Ｉ2 が成り立つ。即ち、高周波コイル１
６と真空容器１０の周壁との間の放電が押さえられる。
従って、均一で安定なプラズマが得られ、また、真空容
器１０の内周面のスパッターによる不純物の発生も押さ
えることができる。尚、上記実施例では、高周波コイル
として１ターンのものを例にして説明したが、複数のタ
ーンのものでも、また、他の形状のものでも良い。I 1 = I 2 + I 3 Then, since the balun circuit 21 is provided between the high-frequency power supply 18 and the matching circuit 20, if I 3 ≠
If 0, the impedance created by the primary coil 24a and the secondary coil 24b increases, and the coil current decreases. When I 3 = 0, the impedance becomes minimum, and I 1 = I 2 holds. That is, the high-frequency coil 1
The discharge between the inner wall 6 and the peripheral wall of the vacuum vessel 10 is suppressed.
Therefore, uniform and stable plasma can be obtained, and generation of impurities due to sputtering on the inner peripheral surface of the vacuum vessel 10 can be suppressed. In the above embodiment, one-turn high-frequency coil has been described as an example. However, the high-frequency coil may have a plurality of turns or may have another shape.
【００１４】[0014]
【発明の効果】以上説明したように、本発明に係わるプ
ラズマ処理装置においては、給電回路にバラン回路を付
加することにより、高周波コイルを真空容器内に配設し
ても、このコイルから真空容器に流れる高周波電流の発
生を防止することができる。このために、真空容器内に
発生させたプラズマの、上記高周波電流による密度の不
均一を防止することができて、均一なプラズマを発生さ
せることができる。また、高周波電流による真空容器の
内周面でのスパッタリングを防止できるので、不純物の
発生がない。従って、高品質のプラズマ処理を被処理体
にすることが可能である。As described above, in the plasma processing apparatus according to the present invention, by adding a balun circuit to the power supply circuit, even if a high-frequency coil is disposed in the vacuum vessel, the coil can be removed from the vacuum vessel. The generation of the high-frequency current flowing through the circuit can be prevented. For this reason, it is possible to prevent the density of the plasma generated in the vacuum vessel from being uneven due to the high-frequency current, and to generate a uniform plasma. Further, since sputtering on the inner peripheral surface of the vacuum vessel due to the high-frequency current can be prevented, no impurities are generated. Therefore, high-quality plasma treatment can be performed on a target object.
【図１】本発明の一実施の形態に係わるプラズマ処理装
置を概略的に示す図である。FIG. 1 is a view schematically showing a plasma processing apparatus according to an embodiment of the present invention.
【図２】図１に示す装置を２−２線方向から見た断面図
である。FIG. 2 is a sectional view of the device shown in FIG.
【図３】図２の３−３線に沿う断面図である。FIG. 3 is a sectional view taken along line 3-3 in FIG. 2;
【図４】本発明のプラズマ処理装置の特に給電回路を示
す図である。FIG. 4 is a diagram illustrating a power supply circuit of the plasma processing apparatus of the present invention.
【図５】本発明のに係わる給電回路で使用されているバ
ラン回路の具体例を示す図である。FIG. 5 is a diagram showing a specific example of a balun circuit used in the power supply circuit according to the present invention.
１０…真空容器、１３…半導体ウエハ、１６…高周波コ
イル、１７…給電回路，１８…高周波電源、１９…セラ
ミック製の鞘、２０…整合回路、２１…バラン回路。DESCRIPTION OF SYMBOLS 10 ... Vacuum container, 13 ... Semiconductor wafer, 16 ... High frequency coil, 17 ... Power supply circuit, 18 ... High frequency power supply, 19 ... Ceramic sheath, 20 ... Matching circuit, 21 ... Balun circuit.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/31 Ｃ 21/31 21/302 Ｂ (72)発明者 荒木 智幸 東京都江東区大島４−１−４−216 (58)調査した分野(Int.Cl.7，ＤＢ名) H05H 1/46 C23C 16/50 C23F 4/00 H01L 21/3065 ────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 7 Identification code FI H01L 21/3065 H01L 21/31 C 21/31 21/302 B (72) Inventor Tomoyuki Araki 4-1 Oshima, Koto-ku, Tokyo 4-216 (58) Fields investigated (Int. Cl. 7 , DB name) H05H 1/46 C23C 16/50 C23F 4/00 H01L 21/3065
Claims (2)
が収容され、少くとも一部が導電性材料で形成された真
空容器と、この容器中に処理ガスを供給する手段と、こ
の真空容器内に配設され、前記処理ガスのプラズマを発
生させる高周波コイルと、この高周波コイルに高周波電
流を供給する給電回路とを具備し、この給電回路は、高
周波コイルから真空容器に高周波電流が流れるのを防止
するようにバラン回路を有することを特徴とするプラズ
マ処理装置。An object to be processed using plasma is accommodated therein, and a vacuum container at least partially formed of a conductive material is provided, means for supplying a processing gas into the container, A high-frequency coil disposed in the container and configured to generate plasma of the processing gas, and a power supply circuit for supplying a high-frequency current to the high-frequency coil; the power supply circuit causes a high-frequency current to flow from the high-frequency coil to the vacuum vessel A plasma processing apparatus having a balun circuit so as to prevent the occurrence of a balun.
されるプラズマに晒されるのを防止するように、セラミ
ック製の鞘で覆われていることを特徴とする請求項１の
プラズマ処理装置。2. The plasma processing apparatus according to claim 1, wherein the high-frequency coil is covered with a ceramic sheath so as to prevent the high-frequency coil from being exposed to plasma generated in a vacuum vessel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11682398A JP3148177B2 (en) | 1998-04-27 | 1998-04-27 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11682398A JP3148177B2 (en) | 1998-04-27 | 1998-04-27 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11307299A JPH11307299A (en) | 1999-11-05 |
| JP3148177B2 true JP3148177B2 (en) | 2001-03-19 |
Family
ID=14696521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11682398A Expired - Fee Related JP3148177B2 (en) | 1998-04-27 | 1998-04-27 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3148177B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7098599B2 (en) | 2000-12-27 | 2006-08-29 | Japan Science & Technology Corporation | Plasma generator |
| JP2005072468A (en) * | 2003-08-27 | 2005-03-17 | Koyo Thermo System Kk | Heat treatment apparatus of semiconductor wafer |
| JP4909523B2 (en) * | 2005-03-30 | 2012-04-04 | 株式会社ユーテック | Sputtering apparatus and sputtering method |
| JP2006278219A (en) * | 2005-03-30 | 2006-10-12 | Utec:Kk | Icp circuit, plasma treatment device, and plasma processing method |
| JP5430014B2 (en) * | 2011-07-15 | 2014-02-26 | 地方独立行政法人山口県産業技術センター | Method for forming SiNxCyOz film |
| CN114666965A (en) * | 2017-06-27 | 2022-06-24 | 佳能安内华股份有限公司 | Plasma processing apparatus |
| CN110800378B (en) * | 2017-06-27 | 2021-12-28 | 佳能安内华股份有限公司 | Plasma processing apparatus |
| PL3648550T3 (en) | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Plasma treatment device |
| EP3648552B1 (en) | 2017-06-27 | 2022-04-13 | Canon Anelva Corporation | Plasma treatment device |
| PL3648554T3 (en) | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Plasma processing device |
| JP6309683B1 (en) * | 2017-10-31 | 2018-04-11 | キヤノンアネルバ株式会社 | Plasma processing equipment |
| WO2020003557A1 (en) | 2018-06-26 | 2020-01-02 | キヤノンアネルバ株式会社 | Plasma treatment device, plasma treatment method, program, and memory medium |
| JP6785935B2 (en) * | 2019-09-25 | 2020-11-18 | キヤノンアネルバ株式会社 | Etching device |
-
1998
- 1998-04-27 JP JP11682398A patent/JP3148177B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11307299A (en) | 1999-11-05 |
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