TW200911040A - Plasma processing system, antenna, and use plasma processing system - Google Patents

Plasma processing system, antenna, and use plasma processing system Download PDF

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TW200911040A
TW200911040A TW097121738A TW97121738A TW200911040A TW 200911040 A TW200911040 A TW 200911040A TW 097121738 A TW097121738 A TW 097121738A TW 97121738 A TW97121738 A TW 97121738A TW 200911040 A TW200911040 A TW 200911040A
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dielectric
metal electrode
plasma processing
processing apparatus
gas
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TW097121738A
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Chinese (zh)
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Masaki Hirayama
Tadahiro Ohmi
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Tokyo Electron Ltd
Univ Tohoku
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A plasma processing system 10 includes a processing chamber 100, a microwave source 900 that outputs a microwave, an inner conductor of a coaxial waveguide 315a that transfers the microwave, a through-hole 305a, a dielectric plate 305 that transmits the microwave transferred through the inner conductor 315a and discharges it into a processing chamber 100, and a metal electrode 310 that is coupled to the inner conductor 315a via the through-hole 305a, the metal electrode 310 being exposed on the surface of the dielectric plate 305 that faces the substrate with at least a portion of the metal electrode 310 being adjacent to the surface of the dielectric plate 305 that faces the substrate. A surface of the exposed surface of the metal electrode 310 is covered by the dielectric cover 320.

Description

200911040 九、發明說明 【發明所屬之技術領域】 本發明是有關藉由電磁波來使氣體激發而電漿處理被 處理體之電漿處理裝置，特別是有關包含將低頻率的電磁 波供給至處理容器内的天線之電漿處理裝置。 【先前技術】 以往，使用導波管或同軸管來將電磁波導入電漿處理 室的方法被開發。例如，在形成於介電體圓板的中心之圓 形透孔内嵌入導波管的圓筒狀的中心導體的下部，在該中 心導體的下端部内嵌入激發用金屬蓋。在此蓋的底面及外 周面，以該等的面不會直接露出於電漿發生室的方式安裝 保護蓋。保護蓋是在於防止因發生於電漿發生室的電漿而 使電場集中於金屬蓋，損傷金屬蓋。 【發明內容】 (發明所欲解決的課題） 然而，以保護蓋來覆蓋金屬蓋的全體時，若使金屬蓋 的底面或外周面等的一面緊貼於保護蓋，則在金屬蓋的其 他面會產生間隙，於該間隙發生異常放電，有可能電漿形 成不均一且不安定。相對的，若使金屬蓋的哪個面皆緊貼 於保護蓋，以不會產生間隙的方式來提高加工精度，則成 本會變高。 200911040 (用以解決課題的手段） 爲了解決上述課題，若根據本發明的某形態，則可提 供一種電漿處理裝置，係藉由電磁波來使氣體激發而電漿 處理被處理體之電漿處理裝置，其特徵係具備： 處理容器； 電磁波源，其係輸出電磁波； 導體棒，其係使從上述電磁波源輸出的電磁波傳送； 介電體板，其係形成有貫通穴，使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極，其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒，至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 露出， 上述金屬電極的露出面的其中一部份係以介電體罩所 覆蓋。 若根據該構成，則上述金屬電極的露出面的其中一部 份會以介電體罩所覆蓋。藉此，可減弱金屬電極附近的電 場，提高電漿的均一性。此時，機械加工的精度上，若將 加工面設成2面以上，則會產生間隙，恐有在該間隙發生 異常放電之虞。 然而，若根據本發明的構成，則上述金屬電極的露出 部份的其中一面會藉由介電體罩所覆蓋。如此只將上述金 屬電極的露出部份的其中金屬電極的底面或外周面等的一 面藉由介電體罩來覆蓋時，可使金屬電極與介電體罩緊貼 -6 - 200911040 。藉此，在金屬電極與介電體罩之間不會產生間隙，因此 可防止異常放電，可使電漿均一且安定地發生。又，因爲 不需要高精度加工，所以可壓低成本。 又，爲了解決上述課題，若根據本發明的其他形態， 則可提供一種電漿處理裝置，係藉由電磁波來使氣體激發 而電漿處理被處理體之電漿處理裝置，其特徵係具備： 處理容器； 電磁波源，其係輸出電磁波； 導體棒，其係使從上述電磁波源輸出的電磁波傳送； 介電體板，其係形成有貫通穴，使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極，其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒，至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 露出， 上述金屬電極的露出面係不具有對被處理體大略平行 的面。 發明者們藉由獨自的模擬，如圖7所示，發現露出於 介電體板的被處理體側的面之金屬電極中，在對被處理體 平行的面（面C)，電場強度會變高。 因此，藉由以不具有對被處理體大略平行的面之方式 來形成金屬電極的露出面，可減弱金屬電極附近的電場， 提高電漿的均一性。 又，爲了解決上述課題，若根據本發明的其他形態， 200911040 則可提供一種天線’其特徵係具備： 導體棒，其係使電磁波傳送； 介電體板’其係形成有貫通穴，使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極’其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒’至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 露出， 上述金屬電極的露出面的其中一面係以介電體罩所覆 蓋。 又，爲了解決上述課題，若根據本發明的其他形態， 則可提供一種天線’其特徵係具備： 導體棒，其係使電磁波傳送； 介電體板’其係形成有貫通穴，使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極’其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒，至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 露出， 上述金屬電極的露出面係不具有對被處理體大略平行 的面。 又’爲了解決上述課題，若根據本發明的其他形態， 則可提供一種電漿處理裝置的使用方法，其特徵爲： 從電磁波源輸出頻率爲1 GHz以下的電磁波， -8 _ 200911040 使上述電磁波傳送至導體棒， 使傳送於上述導體棒的電磁波透過至藉由金屬電極來 保持於處理容器的内壁之上述介電體板，而放出至處理容 器的内部，上述金屬電極係經由形成於介電體板的貫通穴 來連結至上述導體棒，至少一部份鄰接於上述介電體板的 被處理體側的面的狀態下從上述介電體板的被處理體側的 面露出， 藉由上述被放出的電磁波來使導入上述處理容器的處 理氣體激發，而對被處理體實施所望的電漿處理。 又，爲了解決上述課題，若根據本發明的其他形態， 則可提供一種電漿處理裝置的洗滌方法，其特徵爲： 從電磁波源輸出頻率爲1 GHz以下的電磁波， 使上述電磁波傳送至導體棒， 使傳送於上述導體棒的電磁波透過至藉由金屬電極來 保持於處理容器的内壁之上述介電體板，而放出至處理容 器的内部，上述金屬電極係經由形成於介電體板的貫通穴 來連結至上述導體棒，至少一部份鄰接於上述介電體板的 被處理體側的面的狀態下從上述介電體板的被處理體側的 面露出， 藉由上述被放出的電磁波來使導入上述處理容器的洗 滌氣體激發，而洗滌電漿處理裝置。 藉此，例如藉由使用1 GHz以下的頻率的電磁波，即 使是2.4 5GHz的頻率的電磁波的某程度的功率，單一氣體 的狀態下，表面波不會擴大，無法激發均一且安定的電漿 -9- 200911040 之F系單一氣體，還是可使均一且安定的電獎激發。藉此 ，可利用實用性的電磁波的功率來使洗滌氣體激發’藉由 如此產生的電漿來洗滌電漿處理裝置的内部。 【實施方式】 (第1實施形態） 以下一邊參照圖面一邊進行說明’首先，針對本發明 的第1實施形態的電漿處理裝置，一邊參照模式性顯示本 裝置的縱剖面之圖1(圖2的剖面0-0)及顯示處理容器的頂 面之圖2，一邊説明。另外，在以下的説明及圖面中，有 關具有同一構成及機能的構成要素是賦予同一符號，而省 略了重複説明。 (電漿處理裝置的構成） 電漿處理裝置10是在其内部具有用以電漿處理玻璃基 板（以下稱爲「基板G」）的處理容器100。處理容器100是 由容器本體200及蓋體300所構成。容器本體200是具有其 上部被開口的有底立方體形狀，該開口是藉由蓋體3 00所 閉塞。在容器本體200與蓋體3 00的接觸面設有〇型環205 ，藉此容器本體200與蓋體3 00會被密閉，形成處理室u。 容器本體200及蓋體300是例如由鋁等的金屬所構成，且被 電性接地。 在處理容器100的内部設有用以載置基板G的基座 1 0 5 (平台）。基座1 〇 5是例如由氮化鋁所構成，在其内部設 -10- 200911040 有給電部11 〇及加熱器1 1 5。 在給電部1 1 〇是經由整合器1 2 0 (例如電容器）來連接高 頻電源1 2 5。並且，在給電部1 1 0是經由線圏1 3 0來連接高 壓直流電源1 3 5。整合器1 2 0、高頻電源1 2 5、線圈1 3 0及高 壓直流電源1 3 5是被設於處理容器1 〇 〇的外部。而且，高頻 電源125及高壓直流電源13 5會被接地。 給電部110是藉由從高頻電源125輸出的高頻電力來對 處理容器100的内部施加所定的偏壓電壓。並且，給電部 110可藉由從高壓直流電源135輸出的直流電壓來靜電吸附 基板G。 在加熱器1 15是連接設於處理容器100外部的交流電源 140，可藉由從交流電源140輸出的交流電壓來將基板G 保持於所定的温度。基座105是被支撐體145所支撐，在其 周圍設有用以將處理室U的氣流控制於較理想的狀態之 障板1 5 0。 在處理容器100的底部設有氣體排出管155，利用設於 處理容器100的外部之真空栗（未圖示）來從氣體排出管155 排出處理容器1 〇〇内的氣體，藉此處理室U會被減壓至所 望的真空度。 在蓋體300設有複數的介電體板3 05、複數的金屬電極 310及複數的同軸管315的内部導體315a。參照圖2，介電 體板305是藉由氧化銘（AI2O3)所形成，148mmxl48mm之 大略正方形的板是在將分岐同軸管640的管内波長設爲 kg(在915MHz是328mm)時，以Xg/2的整數倍（在此是1倍） -11 - 200911040 的等間隔來縱橫配置。藉此，2 2 4片（=1 4 χ 1 6)的介電體板 305會被均等地配置於2277. 4mmx2605mm白勺處理容器1〇〇 的頂面。 如此，介電體板305是形成對稱性佳的形狀，因此在1 片的介電體板305中容易產生均一的電漿。並且，藉由複 數的介電體板3 05被配置成Xg/2的整數倍的等間隔，在利 用同軸管的内部導體315a來導入微波時，可產生均一的 電漿。 再度回到圖1，在蓋體300的金屬面被切割有圖1所示 的溝300a，可制止導體表面波的傳播。另外，所謂導體表 面波是意指傳播於金屬面與電漿之間的波。 在貫通介電體板305的内部導體315a的前端是以金屬 電極3 1 0能夠露出於基板G側的方式來設置，可藉由内部 導體315a及金屬電極310來保持介電體板305。在金屬電 極3 1 0的基板側的面設有介電體罩3 2 0，可防止電場的集中 〇 一邊參照顯示圖2的剖面A - A ’ - A的圖3 —邊更繼續説 明。同軸管315是由筒狀的内部導體（軸部）315a及外部導 體315b所構成，皆是藉由金屬（較理想是銅）所形成。在蓋 部300與同軸管315a之間，設有在其中央貫通有内部導體 315a的環狀介電體410。在環狀的介電體410的内周面及 外周面設有Ο型環415a、415b’藉此可真空密封處理室U 的内部。 内部導體315a是穿過蓋部300d來突出至處理容器1〇〇 -12- 200911040 的外部。内部導體315a是藉由由連結部510、彈簧 5 1 5及短路部5 2 0所構成的固定機構5 〇 〇，利用彈簧構j 的彈性力來朝處理容器1 00的外側吊起。另外，蓋部 是意指在蓋體300的上面與蓋體300及外部導體315b 化的部份。 在内部導體315a的貫通部份設有短路部520，可 軸管315的内部導體315a與蓋部300d電性短路。短 5 2 0是由屏蔽螺線屏蔽螺線所構成，設成可上下滑動 部導體315a。另外，短路部520亦可使用金屬刷子。 如此，藉由設置短路部5 20，可使從電漿流入至 電極310的熱通過内部導體315a及短路部來效率佳地 至蓋，因此可制止内部導體315a的加熱，防止鄰接 部導體3 1 5 a的Ο型環4 1 5 a、4 1 5 b的劣化。並且，短 5 20可防止微波通過内部導體315a來傳至彈簧構件5 因此在彈簧構件5 1 5周邊的異常放電或電力損失不會 。而且，短路部5 20可防止内部導體315a的軸搖晃， 地保持。 另外，在短路部520以◦型環（未圖示）來真空密 部30 0d與内部導體315a之間、及後述的介電體615與 3 00d之間，且在蓋部3 00d内的空間充塡惰性氣體， 可防止大氣中的雜質混入處理室内。 圖1的冷媒供給源700是被連接至冷媒配管705 ’ 媒供給源700供給的冷媒會循環於冷媒配管7〇5内再度 冷媒供給源700，藉此可將處理容器1 〇〇保持於所望的 構件 尹5 1 5 3 00d 一體 使同 路部 於内 金屬 放掉 於内 路部 15， 發生 牢固 封蓋 蓋部 藉此 從冷 回到 温度 200911040 。氣體供給源800是經由氣體路線805來從圖3所示的内部 導體315a内的氣體流路導入處理室内。 從 2台的微波源 900輸出之持有 l2〇kW( = 60kWx2(2W/cm2))的功率之微波是傳送於分岐導 波管905(參照圖4)、8個的同軸導波管變換器605、8個的 同軸管620、各7根連結至平行位於圖1的背面方向的8根分 岐同軸管640(參照圖2)之同軸管600、分岐板610(參照圖 及同軸管315，透過複數的介電體板305來供給至處理室内 。被放出至處理室U的微波是使從氣體供給源8〇0供給的 處理氣體激發，利用藉此產生的電漿在基板G上執行所 望的電漿處理。 (利用金屬電極之介電體板的保持） 其次，詳細說明有關以上那樣構成的本實施形態的電 漿處理裝置10的天線部份（介電體板3〇5、金屬電極310、 同軸管315)的構成、及利用金屬電極310之介電體板305的 保持機構。 如圖3及擴大金屬電極附近的圖6所示，同軸管315, 600是由圓筒狀的内部導體315a、600a及外部導體315b、 6 00b所構成，皆藉由金屬所形成。内部導體315a是導體 棒的一例。特別是就本實施形態而言’同軸管315，600是 藉由熱傳導率及電氣傳導率高的銅所形成’放掉來自微波 或電漿的熱，且可使微波良好地傳送。 金屬電極310是由鋁（A1)等的金屬所形成。一旦金屬 -14- 200911040 電極3 1 0露出於電漿側，則電場會集中於給電點附近的金 屬電極310，產生比介電體板305的表面更高的密度的電漿 ，不僅會有損電漿的均一性，且金屬電極3 1 0會被鈾刻， 恐有金屬汚染發生之虞。特別是在對基板G大略平行的 面的電場強度會變高。 (模擬） 說明有關圖7所示之模擬模型Ρ 1、Ρ2的面A-C、面Α-Ε的附近的鞘層中的微波的電場強度。發明者們是針對金 屬電極3 1 0的露出部份中，使平行於基板G的面c原封不 動露出於基板G側時（Ρ1)、及藉由介電體罩320來覆蓋平 行於基板G的面時（Ρ2)，藉由模擬來求取面a〜面C、面 A〜面E的附近的電場強度（亦即，鞘層中的微波的電場強 度）。由顯示其結果的圖7的曲線圖可知，在金屬電極31〇 的表面中’就平行於基板G露出的面C而言，電場強度 明顯高。 若更詳細説明，則使平行於基板G的面c露出於電 漿側時（P 1 )’介電體板下部的面A附近的電場強度是比較 低。另 方面，金屬電極3 1 0的露出部份的側面b附近的 電場強度是隨著離開面A而變高，但要比平行於基板G 的面C附近的電場強度低，平行於基板〇的面C附近的 電場強度要比其他的面A，B明顯高。 其次’發明者們針對藉由氧化鋁的介電體罩3 2〇來覆 蓋平行於基板G的面C時（P2)來進行模擬。其結果可知， -15- 200911040 藉由使用介電體罩3 20來覆蓋平坦部，平坦部的電場強度 會顯著變小。即是斜面B雖電場強度變強，但頂多是未以 介電體罩32〇覆蓋時的一半程度。其結果，發明者們證明 了藉由使用介電體罩320來覆蓋平坦部，可防止電漿的集 中，產生更均一的電漿。 又，由P1與P2的比較可知，藉由介電體罩320來覆蓋 平行於基板G的面C，可減弱金屬電極附近的電場，提高 電漿的均一性。 於是，圖6的金屬電極3 1 0的露出部份中，在對基板G 大略平行的面形成有利用介電體罩3 2 0的罩。特別是只將 金屬電極的底面或外周面等的一面藉由介電體罩320來覆 蓋，因此可使金屬電極310與介電體罩320緊貼。藉此，金 屬電極3 1 0與介電體罩3 2 0之間不會產生間隙，所以可防止 異常放電，使電漿均一且安定地產生。又，由於不需要高 精度加工，因此可壓低成本。並且，介電體罩3 20是由多 孔質陶瓷所形成。 金屬電極310是一邊經由設在介電體板305的大略中央 的貫通穴305a來連結至同軸管315的内部導體315a，一邊 露出於介電體板3 0 5的基板側的面。金屬電極3 1 0的直徑是 比内部導體3 1 5 a的直徑大，金屬電極3 1 0之平行於基板的 面與介電體板305之平行於基板G的面是一部份隣接。藉 此’介電體板3 0 5是藉由金屬電極3 1 0來從基板側被保持的 狀態下’利用内部導體3 1 5 a來吊起，牢牢地固定於處理 容器1 0 0的内壁。 -16- 200911040 如此，金屬電極310是一邊由同軸管315的内部導體 3 15a突出至外側，一邊露出於介電體板3 05的基板側的面 。又，由於金屬電極310爲金屬，因此機械強度比介電構 件更強。藉此，金屬電極310無論構造上還是材質上皆可 強固地保持介電體板3 0 5。 如圖6所示，在同軸管315中設有貫通内部導體315a 的内部之氣體導入路3 15c。圖1所示的氣體供給源8 00是經 由氣體路線805來連通至氣體導入路315c。氣體導入路 315c是連通至設於金屬電極310的内部之氣體通路310a。 氣體通路3 1 0a是分歧成2個的環狀流路，而由金屬電極 310的下面來放出至介電體罩320。 流入至介電體罩3 20的氣體是在流動於形成介電體罩 3 20的多孔質陶瓷的氣孔間的期間減弱其速度，以被某程 度減速的狀態來從介電體罩3 20的表面全面導入至處理室 U。氣體會層流狀地持規則性而流動，藉此可實現均一且 良好的製程。 各介電體板3 0 5的基板側的面是形成大略正方形，對 金屬電極3 1 0具有對稱性。因此，微波是由全面配置於頂 面的複數個介電體板305來均一地放出。其結果，可在介 電體板305的下方更均一地產生電漿。各介電體板305是由 氧化鋁（ai2o3)所形成。 (金屬電極及介電體罩的最適形狀） 發明者們爲了不使異常放電發生，藉由模擬來如其次 -17- 200911040 般求取由金屬電極3 10及氧化鋁所形成的介電體罩3 20的最 適形狀。 就金屬電極310的形狀而Η，是以圖15及圖16所示的 寬度D、高度Η，前端部具有圓弧的基本形，圖17及圖18 所示的直徑3 2mm、高度Η的圓錐形狀，圖1 9所示的直徑 32mm、高度10mm的圓錐形狀，圖20所示的半球形狀作爲 模擬的對象。就金屬電極310與介電體罩3 20的組合形狀而 言，是以圖2 1所示的圓錐形，圖2 2及圖2 3所示的圓錐形的 前端爲平面的形狀作爲模擬對象。 (模擬結果） 利用圖1 5〜圖2 3來説明使用以上的條件來執行模擬的 結果所取得的金屬電極310及介電體板305下面的電場強度 的分布。首先，發明者們是在上述模擬條件之下，將寬度 D固定於32mm，使闻度Η變化成4mm、7mm、l〇mm。圖 1 5是表示此情況時的介電體板3 0 5下部的電場強度。Γ是 表示反射係數的絶對値（括弧内是相位）。反射係數是表示 由金屬電極側所見的微波的反射之指標。 由圖1 5所示的結果’發明者們得知，基本形是在金屬 電極3 1 0的下面的水平面，電場變強。又，發明者們確認 即使令金屬電極310的高度變化，電場的集中還是未被改 善 ° 於是，發明者們，如圖16所示，將高度η固定於7mm ，使寬度D(金屬電極的直徑）變化成24mm、32mm、40mm *18- 200911040 。然而’根據該結果’在金屬電極下面的水平面，電場的 集中未被改善。 其次’發明者們，如圖17所示，將金屬電極310設爲 圓錐形狀，使高度Η變化成7' 1〇、umm。其結果可知， 電場的集中會被改善’特別是在金屬電極310的斜面，電 場難以集中。並且，在上述7、1〇、Umm的範圍，提高 金屬電極310的高度，電場較難以集中。 然而，如圖18所示，若將高度η更提高成16，19、 2 5 mm，則可知在金屬電極3 1 〇的前端，電場會再變強。 其次’發明者們，如圖1 9所示，藉由模擬來求取使電 漿介電常數h變動時的圓錐形的金屬電極3 1 0及介電體板 3 0 5下面的分布狀態。此時，將圓錐徑的金屬電極3 1 0的直 徑設爲32cm ’將闻度固定於l〇mm。 另外，將介質損耗角正切Τδ設爲-0.1。電漿的介電常 數h及介質損耗角正切Τδ是表示電漿的狀態，電漿的介 電常數h是表示電槳的分極的狀態，電漿的介質損耗角 正切Ts是表示使氣體激發而產生的電漿中的電阻所造成 的電荷損失的狀態。 就圖19而言是使電漿的介電常數變換成_4〇、-2 0 、-10。表示電漿的介電常數h越大，電漿的密度越高。 由圖1 9所示的結果，發明者確認，電漿的密度越低’則金 屬電極3 1 0的電場會越強，微波不會擴大。 其次，發明者們，如圖20所示，將金屬電極310的形 狀設成直徑32mm的半球形’執行模擬。此情況’在金屬 -19- 200911040 電極310及介電體板3 05的下面，也未見電場的集中。但’ 半球形的金屬電極3 1 0是比圓錐形的金屬電極3 1 0，高度高 。並且，將金屬電極3 1 0形成半球形狀要比形成圓錐形狀 更難加工。 其次，發明者們，如圖21所示，在金屬電極310之與 被處理體水平的面設置圓錐形的介電體罩3 20，且將金屬 電極310及介電體罩320的露出面設成大略圓錐形狀。將金 屬電極310的底面的直徑設爲54mm，將高度設爲7mm，將 從金屬電極310的底面到介電體罩3 20的前端部爲止的高度 設爲27mm。此情況，在金屬電極310的附近也未見電場的 集中。 又’發明者們，如圖22及圖23所示，模擬將介電體罩 3 2 0的前端形成平面的構造時的電場集中度。圖2 2是將金 屬電極310的底面的直徑設爲54mm，將高度設爲7 mm，使 介電體罩3 2 0的高度W變動成12、1〇、8、6mm。其結果 ，發明者們確認，當介電體罩的厚度爲l〇mm以上時，未 見電場的集中。 於是’發明者們假想圖2 3所示的模型。亦即，將金屬 電極310的底面的直徑設爲54mm’將高度設爲7mnl，使介 電體罩320的高度W變動成10 mm，使電漿的介電常數％ 變動成-10、-20、-40、-60。其結果，將介電體罩32〇的厚 度固定成10mm時’即使在高密度下，也未見在金屬電極 3 1〇的附近電場集中。 -20- 200911040 (實驗） 於是，發明者是根據上述模擬結果來進行實驗。實驗 的電漿條件爲其次的4系統。 (1) Ar 單一氣體：3，1，0.5，0_1，0.05Torr (2) Ar/02混合氣體：Ar/02=1 60/40、1 00/1 00、0/200sccm (3) Ar/N2混合氣體：Ar/N2=1 60/40、1 00/1 00、〇/200sccm (4) Ar/NF3混合氣體：Ar/NF3=1 80/20、160/40、1 00/100sccm 針對此實驗結果，簡單敘述應注目的事項。當金屬電 極310爲圓錐形狀時，電場不會集中於金屬電極310的附近 ，且對Ar氣體的壓力，〇2、N2、NF3等氣體種類的依存 性也幾乎沒有，可取得良好的結果。當金屬電極310爲半 球形狀時，與氬氣體一起供給02或NF3的氣體時，對02 及NF3的壓力依存性比較高。在金屬電極310安裝介電體 罩320，形成圓錐形狀時，介電體罩3 20 (在此是氧化鋁）的 電漿亮度比金屬電極310暗。並且，可知金屬電極310的鋁 部份的亮度具有氣體種類依存性。就基本形而言，〇2的壓 力依存性比較高。 根據以上的考察，發明者導出其次那樣的結論。首先 ’金屬電極310爲了不使電場集中，最好是形成大略圓錐 形狀或大略半球形狀、特別是形成大略圓錐形狀爲理想。 並且，在金屬電極310安裝介電體罩320時，也是將金屬電 極310及介電體罩32〇的露出面形成大略圓錐形狀爲理想。 此時，介電體罩320的前端形成平面比不形成平面時，電 場較不會集中於前端，因此較佳。並且，導出前端形成平 -21 - 200911040 面的介電體罩320之垂直於基板G的方向的高度若爲10 mm 以内更佳。 (保護膜） 金屬電極310的表面是以耐鈾性高的氧化釔（Y2〇3)、 氧化鋁（Α12〇3)、Tefl〇n(特富龍）（註冊商標）的保護膜所覆 蓋。藉此，可迴避因F系氣體（氟自由基）或氯系氣體（氯 自由基）等而金屬電極310被腐蝕。 具體說明有關此保護膜的材質。在金屬電極3 1 0的表 面所被覆的保護膜，可爲由以鋁爲主成分的金屬氧化膜所 構成的膜，亦即膜厚爲1 〇 n m以上，來自上述膜的放出水 分量爲1E18分子/ cm2以下（ΙχΙΟ18個/cm2以下）的金屬氧化 膜。另外，在以下的説明是利用E表記法（E-Notation)來 表示分子數。 此放出水分是來自金屬氧化物膜的表面吸附水，放出 水分量是與金屬氧化物膜的實效表面積成比例，因此爲了 減少放出水分量，使實效表面積形成最小爲有效。所以， 最好金屬氧化物膜是在表面無氣孔（bore)等的障壁型金屬 氧化物膜。 在壓低一部份元素的含有量之以鋁爲主成分的金屬中 ，藉由使用特定的化成液來形成的金屬氧化物膜是未形成 有空隙（void)或氣體積存，因加熱所造成氧化物膜的裂縫 發生等會被制止，藉此對於硝酸、氟等的藥液及鹵素氣體 、特別是氯氣體而言具有良好的耐蝕性。 -22- 200911040 來自金屬氧化物膜的放出水分量是意指使金屬氧化物 膜在23°C下10小時，然後昇温更在200°C下保持2小時的期 間從膜放出的每單位面積的放出水分子數[分子/cm2](昇温 時間中亦含測定）。放出水分量可例如使用大氣壓離子化 質量分析裝置（Renesas Eastern Japan製UG-302P)來測定 〇 金屬氧化物膜是在pH4〜1 0的化成液中陽極氧化以鋁 爲主成分的金屬或以高純度鋁爲主成分的金屬而取得者爲 理想。最好化成液是含有由硝酸、磷酸及有機羧酸以及該 等的鹽所成的群選擇的至少一種。又，最好化成液是含有 非水溶媒。又，最好金屬氧化物膜是在陽極氧化之中以 1 〇以上來加熱處理。例如，可在1 00°c以上的加熱爐中 退火處理。不過，金屬氧化物膜是在陽極氧化之中以 1 5 0 °c以上來加熱處理更加。 在金屬氧化物膜的上下，亦可因應所需，具有其他的 層。例如，亦可在金屬氧化物膜上更形成由金屬、金屬陶 瓷及陶瓷所選擇的其中1種或2種以上作爲原料的薄膜’而 成爲多層構造。 另外，所謂以鋁爲主成分的金屬是意指含鋁5〇質量％ 以上的金屬。亦可爲純鋁。較理想是此金屬是含鋁8 0質量 %以上，更理想是含鋁90質量％以上，更以含94質量％以 上爲理想。又，以鋁爲主成分的金屬’較理想是包含由鎂 、鈦及锆所構成的群選擇的至少一種以上的金屬。 又，所謂以高純度鋁爲主成分的金屬是意指以鋁爲主 -23- 200911040 成分的金屬，特定元素（鐵、銅、錳、鋅、鉻）的總含有量 爲1 %以下的金屬。又，所謂以高純度鋁爲主成分的金屬 ，最好是包含由鎂、鈦及锆所成的群選擇的至少一種以上 的金屬。 如以上説明，若根據本實施形態的電漿處理裝置1 〇， 則金屬電極310是經由介電體板305的貫通穴305a來與同 軸管315連結，一邊由内部導體315a突出，一邊露出於介 電體板3 0 5的基板側的面。藉此，可利用金屬電極3 1 0來牢 牢保持介電體板305。並且，藉由在金屬電極310的一面設 置介電體罩320，可減弱金屬電極附近的電場，可提高電 漿的均一性。 又，就本實施形態的電漿處理裝置而言，介電體板 是由224片的介電體板305所形成。藉此，由於介電體板是 由複數的介電體板3 0 5所構成，因此可提供一種零件的更 換等維修容易，且對應於基板的大面積化擴張性高的電漿 處理裝置10。 (第1實施形態的變形例） 其次，說明有關本實施形態的金屬電極3 1 〇的變形例1 ，2。 (變形例1) 根據前述的模擬結果可知’在金屬電極3 1 〇的露出部 份，特別是在對基板G平行的面’電場會集中。因此’ -24- 200911040 最好金屬電極3 1 0的露出部份是形成對基板G不具2P行的 面之形狀。如此的變形例，例如可舉圖8的圓錐形°又’ 如圖9所示，亦可爲半球狀。就圖8及圖9所示的金屬電極 310而言，其優點可舉：因爲沒有介電體罩，所以對於成 本而言有利，且因爲對基板G非平行的面，所以電場難 以集中。 當金屬電極310的露出部份爲圖8所示的圓錐形時’氣 體例如可從等間隔設置的6個氣體通路310a斜向45度下導 入。另外，若對圖8所示的圓錐形的前端賦予圓形’則可 更有效防止電場的集中。 又，當金屬電極310的露出部份爲圖9所示的半球狀時 ，氣體例如可從等間隔設成放射狀的氣體通路3 1 〇a放射 狀導入。 又，形成於金屬電極3 1 0的氣體通路3 1 0 a，如圖1 〇所 示，可形成在對基板G平行的方向導入氣體，或在對基 板G垂直的方向導入氣體。另外，圖1〇的介電體罩320是 以氧化鋁陶瓷所形成。 並且，在金屬電極310的露出部份設置多孔質體陶瓷 的介電體罩32〇時，如圖6所示，可從金屬電極310的氣體 通路310a經由介電體罩320來導入至處理室U。 (變形例2) 將圖11的X-X剖面顯示於圖12。圖11是以Y-Y面切 斷圖1 2的圖。如圖1 1所示，金屬電極3丨〇是以其根本能夠 -25- 200911040 插入至介電體板305的貫通穴3〇5a之方式延伸，而同軸管 315的内部導體315a與金屬電極310是藉由設於内部導體 3 1 5 a的端部之雄螺絲3 1 5 d及設於金屬電極3丨〇的根本之雌 螺絲310b來螺合而連結。 就圖6的環狀介電體410與0型環415b而言，首先嵌 入Ο型環415b，然後，安裝環狀的介電體410。在安裝環 狀的介電體410時’有時〇型環41 5b會傷到。然而，就圖 1 1的構造而言，介電體板3 05的上部角是形成錐狀。藉此 ’形成可順暢地嵌入介電體板3 0 5，且在介電體板3 05的安 裝時難以傷及0型環41 5b的構造。 又，就本變形例而言，介電體板3 0 5與圖3所示的環狀 介電體410，如圖11所示，亦可爲一體形成。又，亦可取 代在介電體板3 05的内周面與同軸管315之間及介電體板 305的外周面與蓋體300之間設置2個的Ο型環415a、415b ，而在介電體板305的内周面與金屬電極310之間設置Ο 型環415b，在介電體板305的外周面與蓋體300之間設置0 型環41 5a。藉此，同樣可藉由金屬電極310及内部導體 3 15a來將介電體板3 05牢牢地保持於頂面，真空密封處理 室U的内部。 在上述實施形態中，各部的動作是互相關連，可一邊 考慮互相的關連，一邊置換作爲一連串的動作。而且，可 藉由如此的置換，將電漿處理裝置的發明的實施形態作爲 電漿處理裝置的使用方法或電漿處理裝置的洗滌方法的實 施形態。 -26- 200911040 (頻率的限定） 利用上述各實施形態的電漿處理裝置10來使頻率爲 1 GHz以下的微波從微波源900輸出，可實現良好的電漿處 理。以下說明其理由。 藉由化學反應來使薄膜堆積於基板表面的電漿CVD 製程，並非僅基板表面，連處理容器内面也會附著膜。一 旦附著於處理容器内面的膜剝落而附著於基板，則會使良 品率變差。而且，會有從附著於處理容器内面的膜所發生 的雜質氣體被取入薄膜，使膜質惡化的情況。因此，爲了 進行高品質製程，必須定期性地洗滌反應室内面。 氧化矽膜或氮化矽膜的洗滌，常常利用 F自由基 (radical) «F自由基是高速蝕刻該等的膜。F自由基是以 含NF3或SF6等的F之氣體來激發電漿，藉由分解氣體分 子而產生。若以含F及0的混合氣體來激發電漿，則F 或〇會與電漿中的電子再結合，因此電漿中的電子密度會 降低。特別是在所有的物質中以含電負性（electronegativity) 最大的F之氣體來激發電漿，則電子密度會顯著降低。 爲了證明此，本發明者是以微波頻率2 · 4 5 GH z，微波 電力密度壓力〗3.3Pa的條件來產生電漿，而 計測電子密度。其結果’電子密度是在Ar氣體時爲 2.3 X 1 0 12 cnT3，相對的，在N F 3氣體時爲更小一位數以上 的 6.3x l〇1〇cm-3。 如圖1 3所示，若增加微波的電力密度，則電漿中的電 -27- 200911040 子密度會増加。具體而言，若使電力密度從1.6 W/cm2形成 2.4W/cm2 ’則電漿中的電子密度是從6.3xl01Gcm_3增加至 UxloHcm·3。 另一方面，若施加2.5 W/cm2以上的微波，則介電體板 會加熱而破裂或在各部異常放電的危險性會增高，不經濟 ，因此就NF3氣體而言實用上難以形成1.4 xlO 11 Cm_3以上 的電子密度。亦即，爲了即使在電子密度極低的NF3氣體 也能夠產生均一且安定的電漿，而表面波共鳴密度ns必 須在 1.4 X 1 0 1 1 cnT3以下。 表面波共鳴密度ns是表示表面波可傳播於介電體板 與電漿之間的最低電子密度，若電子密度比表面波共鳴密 度ns更小，則表面波不會傳播，因此只能夠激發極不均 一的電漿。表面波共鳴密度n s是具有式（1)的截止密度n。 及以式（2)所示的比例關係。 nc = s〇me(〇2/e2 . . · (1) ns = nc( 1 +εΓ) · · · -(2) 在此，ε〇是真空的介電常數，^^是電子的質量，ω是 微波角頻率，e是基本電荷，^是介電體板的比介電常數 〇 由上述式（1)(2)可知表面波共鳴密度ns是與微波頻率 的二次方成比例。因此，選擇低的頻率，即使在更低的電 子密度，表面波也會傳播’可取得均一的電漿。例如，若 將微波頻率設成1 /2 ’則即使在1 /4的電子密度也能夠取得 均一的電漿，微波頻率的低減對於製程窗口的擴大極有效 -28- 200911040 表面波共鳴密度ns與使用NF3氣體時的實用性電子密 度l.OloHcnT3相等的頻率是1GHz。亦即，若選擇1GHz 以下作爲微波的頻率，則使用哪種氣體皆可在實用性的電 力密度下激發均一的電漿。 以上，例如由微波源900輸出頻率爲1GHz以下的微波 ’藉此可對被處理體（例如基板G)實施良好的電漿處理。 例如’可爲電漿處理裝置的使用方法，其係由上述實 施形態的電漿處理裝置10的微波源900輸出頻率爲1GHz以 下的微波’藉此使由微波源9 0 0輸出的微波傳送至同軸管（ 例如同軸管600，315)，在藉由金屬電極310(該金屬電極 3 10係經由形成於介電體板3 0 5的貫通穴3 05 a來連結至同 軸管的内部導體315a ’至少一部份鄰接於介電體板305的 基板側的面的狀態下從介電體板3 0 5的基板側的面露出）來 保持於處理容器100的内壁的介電體板305，使傳送於同軸 管315的微波透過而放出至處理容器1〇〇的内部，藉由所被 放出的微波來使導入至處理容器1〇〇的處理氣體激發，而 對被處理體實施所望的電漿處理。 又’例如’可爲電漿處理裝置的洗滌方法，其係由上 述實施形態的電漿處理裝置10的微波源900來輸出頻率爲 1 GHz以下的微波’藉此使由微波源9〇〇輸出的微波傳送至 同軸管（例如同軸管600，315)，在藉由金屬電極31 0(該金 屬電極310係經由形成於介電體板3〇5的貫通穴3〇5a來連 結至同軸管的内部導體3 1 5a，至少一部份鄰接於介電體板 -29- 200911040 3 05的基板側的面的狀態下從介電體板3 05的基板側的面露 出）來保持於處理容器1〇〇的内壁的介電體板305，使傳送 於同軸管315的微波透過而放出至處理容器100的内部，藉 由所被放出的微波來使導入至處理容器1〇〇的洗滌氣體激 發，而洗滌電漿處理裝置。 另外，在電氣學會·微波電漿調査專門委員會編「微 波電漿的技術j 〇hmsha，Ltd.出版，平成15年9月25日發行 的序文中，就本書而言，「微波頻帶」是指UHF頻帶的 3 0 0MHz以上的頻率區域」，因此在本說明書中也是微波 的頻率爲300MHz以上。 就上述實施形態而言，雖是舉輸出915MHz的微波之 微波源900，但亦可爲輸出8 96MHz、922MHz、2.45GHz的 微波之微波源。並且’微波源是相當於產生用以激發電漿 的電磁波之電磁波源。 以下簡單彙整以上説明的各實施形態的各構件或構件 間的關連。例如’亦可將金屬電極的露出面形成大略圓錐 形或大略半球狀。 此時’可將金屬電極的露出部份鄰接於介電體板的被 處理體側的面的一部份或全部而設置。藉此，可藉由金屬 電極來牢固保持介電體板。 又’亦可藉由介電體罩來覆蓋上述金屬電極的露出部 份之至少對處理體大略平行的面。介電體罩的表面是電場 難集中。因此’藉由使用介電體罩來覆蓋金屬電極的露出 部份’可迴避電場集中於給電點附近的金屬電極的表面， -30- 200911040 而於金屬電極附近產生密度高的電漿，藉此，可產生均一 的電漿。 上述介電體罩亦可藉由多孔質陶瓷來形成。藉此，可 藉由使氣體流動於由多孔質陶瓷所形成的介電體罩的氣孔 間來將氣體導入至處理容器的内部。 上述金屬電極及介電體罩的露出面亦可形成大略圓錐 形。上述介電體罩的前端亦可形成平面。上述介電體罩之 垂直於被處理體的方向的高度可爲10mm以内。藉此，電 場不會集中於介電體罩的表面，可產生均一的電漿，且可 有效迴避金屬汚染。 上述介電體板的貫通穴亦可設於上述介電體板的大略 中央。藉此，可利用金屬電極來平衡佳地保持介電體板。 並且，可使電磁波從同軸管通過介電體板來均一地供給至 處理容器内。 上述金屬電極的表面亦可使用保護膜來覆蓋。例如， 上述金屬電極的表面可使用耐蝕性高的氧化釔（Y 2 〇 3 )、氧 化鋁（Al2〇3)、Tefl〇n(特富龍）（註冊商標）的保護膜來保護 。藉此，可迴避因F系氣體（氟自由基）或氯系氣體（氯自 由基）等而金屬電極被腐蝕。 亦可在上述同軸管的内部形成有流動氣體的氣體 路，在上述金屬電極形成有與形成於上述同軸管的内部之 氣體導入路連通’將流動於上述氣體導入路的氣體導入至 上述處理容器的内部之氣體通路。 藉此，氣體會從設於金屬電極的氣體通路來導入至處 -31 - 200911040 理容器内。由於金屬不透過電磁波，因此氣體在金屬電極 内的氣體通路不會有激發的情況。藉此，可迴避在金屬電 極内產生電漿。 另外，形成於上述金屬電極的氣體通路是以能夠對被 處理體大略平行的方向導入氣體的方式形成’或以能夠對 被處理體大略垂直的方向導入氣體的方式形成，或以能夠 放射狀導入氣體的方式形成。 氣體亦可從形成於金屬電極的氣體通路β直接導入至 上述處理容器的内部。又，氣體亦可從上述氣體通路經由 多孔質陶瓷所形成的介電體罩來導入至處理容器的内部。 特別是氣體從多孔質陶瓷供給時，氣體在流動於多孔質陶 瓷的氣孔間的期間減弱其速度，在被某程度減速的狀態下 從多孔質陶瓷的表面全面放出。藉此，可防止在處理容器 内氣體沒有用處地擴散，其結果，可不使氣體過剩地解離 產生所望的電漿。 上述介電體板可由氧化鋁所形成。 上述介電體板可由複數的介電體板所形成，上述金屬 電極可對應於上述複數的介電體板來設置複數個。藉此， 由於介電體板爲由複數的介電體板所構成，因此可提供一 種零件的更換等維修容易，且對應於基板的大面積化擴張 性高的電漿處理裝置。 另外’複數的介電體板的各介電體板可以被處理體側 的面能夠形成大槪矩形狀的方式形成。複數的介電體板的 各介電體板可以被處理體側的面能夠形成大略正方形的方 -32- 200911040 式形成。藉此’由於各介電體板是具有對稱性的形狀，因 此電磁波是由全面配置於頂面的複數個介電體板來均一地 放出。其結果’可在介電體板的下方更均一地產生電漿。 上述電磁波源可輸出頻率爲1 GHz以下的電磁波。藉 此’可降低截止密度，擴大製程窗口，可使用一個的裝置 來實現各種的製程。 製程中’上述介電體板的側面亦可不接觸於電漿。一 旦在介電體板的周圍電體板與其他的構件接觸，則會產生 間隙，電漿會進入間隙，因此會有產生異常放電之虞。爲 了消除間隙，需要高精度加工，但成本高。然而，藉此， 上述介電體板的側面會接觸於電漿。藉此，在介電體板的 周圍不會有產生間隙的情況，不需要高精度加工，可壓低 成本。 以上’一邊參照圖面一邊說明有關本發明的較佳實施 形態’但當然並非限於本發明的例子。只要是該當業者， 便可在申請專利範圍所記載的範疇内，思及各種的變更例 或修正例，當然該等隸屬本發明的技術範圍。 例如’本發明的電漿處理裝置亦可爲具有角形的複數 個介電體板3〇5之電漿處理裝置，或如圖14所示，可爲具 有大面積的1片圓形的介電體板305之電漿處理裝置。 藉此，可利用連結於一根的内部導體3〗5a的1個金屬 電極310來將1片的介電體板305配設於處理容器100的頂部 。藉此’與具有複數的介電體板3 0 5之電漿處理裝置時同 樣’製程中，介電體板3 0 5的側面是接觸於電漿。 -33- 200911040 若爲如此的狀態’則在介電體板3 0 5的側面’介電體 板305與其他的構件（例如’金屬框等）接觸時，可迴避電 漿進入介電體板3 〇 5與該等的構件之間隙’產生異常放電 的現象。 而且，在環狀介電體410的上部，蓋體3 00與内部導體 315a之間，設有其中央貫通有内部導體315a的環狀介電 體420。環狀介電體420的外周面及内周面的一部份是被埋 入蓋體300及内部導體315a。環狀介電體420與蓋體300之 間，朝向處理容器的内側的面（下面）設有〇型環425。 如此，在圖14所示的電漿處理裝置10，爲了吊起介電 體板3 05，而設有〇型環42 5。藉此，可利用〇型環425對 處理容器1 〇〇的彈性力（反彈力）來將同軸管的内部導體 3 1 5 a推上至處理容器1 〇 〇的外側。 而且，設置2個環狀的介電體410、420，藉此將保持 介電體板305的内部導體315a以2點支撐，因此可防止同 軸管315的軸搖晃。如此一來，藉由彈簧的彈性力及内部 導體315a的引導機能，介電體板305可牢牢地緊貼於蓋體 3 00的内壁。其結果，可迴避因電漿進入蓋體3〇〇的内壁與 介電體板3 0 5的間隙而發生的異常放電，進而能夠均一且 安定地產生電漿。 另外’本發明的電漿處理裝置亦可處理大面積的玻璃 基板圓形的砂晶圓或角型的SOI(Silicon On Insulator) 基板。 又’本發明的電漿處理裝置可執行成膜處理、擴散處 -34- 200911040 理、蝕刻處理、灰化處理等所有的電漿處理。 【圖式簡單說明】 圖1是本發明的第1實施形態的電漿處理裝置的縱剖面 圖。 圖2是表示同實施形態的電漿處理裝置的頂面。 圖3是表示同實施形態的分岐導波管。 圖4是表示同實施形態的介電體板的固定機構及其附 近的圖。 圖5是表示同實施形態的分岐板。 圖6是表示同實施形態的金屬電極及其附近的圖。 圖7是表示同實施形態的金屬電極的形狀與電場強度 的關係的曲線圖。 圖8是表示同實施形態的金屬電極的變形例。 圖9是表示同實施形態的金屬電極的其他變形例。 圖1 〇是表示同實施形態的金屬電極的其他變形例。 圖1 1是表示同實施形態的金屬電極的其他變形例。 圖12是表不圖11的X-X剖面圖。 圖1 3是表示微波的電力密度與電漿的電子密度的關係 曲線圖。 圖1 4是表不其他的變形例。 圖1 5是用以使金屬電極的形狀（基本形）最適化的模擬 結果。 圖1 6是用以使金屬電極的形狀（基本形）最適化的其他 -35- 200911040 模擬結果。 圖1 7是用以使金屬電極的形狀（圓錐形）最適化的其他 模擬結果。 圖1 8是用以使金屬電極的形狀（圓錐形）最適化的模擬 結果。 圖19是用以使金屬電極的形狀（圓錐形）最適化的其他 模擬結果。 圖20是用以使金屬電極的形狀（半球形）最適化的模擬 結果。 圖2 1是用以使介電體罩的形狀最適化的模擬結果。 圖2 2是用以使介電體罩的形狀最適化的其他模擬結果 〇 圖23是用以使介電體罩的形狀最適化的其他模擬結果 【主要元件符號說明】 1 〇 :電漿處理裝置 100 :處理容器 200 :容器本體 3〇〇 :蓋體 300a ：溝 3〇5 :介電體板 3〇5a :貫通穴 3 1 0 :金屬電極 -36- 200911040 導體 介電體 425 : Ο型環 315 、 600 :同軸管 315a， 600a ：内部 3 20 :介電體罩 4 1 0、4 2 0 :環狀的 205、 415a、 415b、 5 00 :固定機構 5 2 0 :短路部 6 〇 0 :同軸管 600a :内部導體 6 1 〇 :分岐板 8 00 :氣體供給源 9 00 :微波源 905 :分岐導波管 U :處理室 -37BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for plasma-treating a processed object by electromagnetic waves, and particularly relates to supplying a low-frequency electromagnetic wave into a processing container. The plasma processing device of the antenna. [Prior Art] Conventionally, a method of introducing electromagnetic waves into a plasma processing chamber using a waveguide or a coaxial tube has been developed. For example, a lower portion of a cylindrical center conductor of a waveguide is embedded in a circular through hole formed in a center of a dielectric disk, and a metal cover for excitation is fitted in a lower end portion of the center conductor. The protective cover is attached to the bottom surface and the outer peripheral surface of the cover so that the surfaces are not directly exposed to the plasma generating chamber. The protective cover is for preventing the electric field from being concentrated on the metal cover due to the plasma generated in the plasma generating chamber, and damaging the metal cover. [Problem to be Solved by the Invention] However, when covering the entire metal cover with a protective cover, if one surface such as the bottom surface or the outer peripheral surface of the metal cover is brought into close contact with the protective cover, the other surface of the metal cover is provided. A gap is generated, and an abnormal discharge occurs in the gap, and there is a possibility that the plasma is unevenly formed and unstable. In contrast, if the surface of the metal cover is brought into close contact with the protective cover, the machining accuracy is improved without causing a gap, and the cost becomes high. 200911040 (Means for Solving the Problem) In order to solve the above problems, according to an aspect of the present invention, a plasma processing apparatus capable of exciting a gas by electromagnetic waves and plasma treating the plasma of the object to be processed is provided. The device is characterized by: a processing container; an electromagnetic wave source that outputs electromagnetic waves; a conductor bar that transmits electromagnetic waves output from the electromagnetic wave source; and a dielectric body plate that is formed with a through hole for transmitting to the conductor a rod electromagnetic wave is transmitted and discharged to the inside of the processing container; and a metal electrode is connected to the conductor bar via a through hole formed in the dielectric plate, and at least a portion is adjacent to the dielectric plate The surface of the dielectric body plate is exposed from the surface of the object to be processed in a state in which the surface on the side of the body is processed, and a part of the exposed surface of the metal electrode is covered with a dielectric cover. According to this configuration, one of the exposed faces of the metal electrodes is covered with a dielectric cover. Thereby, the electric field in the vicinity of the metal electrode can be weakened, and the uniformity of the plasma can be improved. At this time, if the machining surface is set to have two or more faces in the precision of machining, a gap may occur, and an abnormal discharge may occur in the gap. However, according to the constitution of the present invention, one of the exposed portions of the metal electrode is covered by the dielectric cover. When only one surface of the exposed portion of the metal electrode, such as the bottom surface or the outer peripheral surface of the metal electrode, is covered by the dielectric cover, the metal electrode and the dielectric cover can be closely attached to -6 - 200911040. Thereby, no gap is formed between the metal electrode and the dielectric cover, so that abnormal discharge can be prevented, and the plasma can be uniformly and stably generated. Moreover, since high-precision machining is not required, it is possible to reduce the cost. Moreover, in order to solve the above-mentioned problems, according to another aspect of the present invention, a plasma processing apparatus which is a plasma processing apparatus which electrically excites a gas by electromagnetic waves and plasma-treats a to-be-processed body, is characterized by the following: a processing container; an electromagnetic wave source for outputting electromagnetic waves; a conductor bar for transmitting electromagnetic waves output from the electromagnetic wave source; and a dielectric body plate having a through hole formed therein for transmitting electromagnetic waves transmitted to the conductor bar to be discharged to The inside of the processing container; and a metal electrode connected to the conductor bar via a through hole formed in the dielectric plate, and at least a portion of which is adjacent to a surface of the dielectric body on the side of the object to be processed The surface of the dielectric plate is exposed from the surface of the object to be processed, and the exposed surface of the metal electrode does not have a surface that is substantially parallel to the object to be processed. As shown in FIG. 7 , the inventors found out that the electric field strength is exposed on the surface (surface C) parallel to the object to be processed in the metal electrode exposed on the surface of the dielectric sheet on the side of the object to be processed by the simulation. Becomes high. Therefore, by forming the exposed surface of the metal electrode so as not to have a surface substantially parallel to the object to be processed, the electric field in the vicinity of the metal electrode can be weakened, and the uniformity of the plasma can be improved. Further, in order to solve the above problems, according to another aspect of the present invention, 200911040 provides an antenna which is characterized in that: a conductor bar is provided for transmitting electromagnetic waves; and a dielectric plate is formed with a through hole for transmitting The electromagnetic wave transmitted from the conductor bar is transmitted to the inside of the processing container; and the metal electrode is connected to the conductor bar via a through hole formed in the dielectric plate. At least a portion is adjacent to the dielectric body. The surface of the board on the side of the object to be processed is exposed from the surface of the dielectric body on the side of the object to be processed, and one surface of the exposed surface of the metal electrode is covered with a dielectric cover. Further, in order to solve the above-described problems, according to another aspect of the present invention, an antenna of the present invention includes: a conductor bar for transmitting electromagnetic waves; and a dielectric plate for forming a through hole for transmitting The electromagnetic wave of the conductor bar is transmitted and discharged to the inside of the processing container; and the metal electrode is connected to the conductor bar via a through hole formed in the dielectric plate, and at least a portion is adjacent to the dielectric plate The surface of the object to be processed is exposed from the surface of the dielectric body on the side of the object to be processed, and the exposed surface of the metal electrode does not have a surface that is substantially parallel to the object to be processed. In order to solve the above problems, according to another aspect of the present invention, a method of using a plasma processing apparatus can be provided, which is characterized in that: an electromagnetic wave having a frequency of 1 GHz or less is output from an electromagnetic wave source, and the electromagnetic wave is -8 _ 200911040 And transmitted to the conductor bar, and the electromagnetic wave transmitted to the conductor bar is transmitted to the dielectric plate held by the metal electrode on the inner wall of the processing container, and is discharged to the inside of the processing container, and the metal electrode is formed on the dielectric via The through hole of the body plate is connected to the conductor bar, and at least a portion is exposed from the surface of the dielectric body plate on the object side of the dielectric body in a state of being adjacent to the surface of the dielectric body on the object side of the dielectric body. The electromagnetic wave emitted is excited by the processing gas introduced into the processing container, and the desired plasma treatment is performed on the object to be processed. In order to solve the above problems, according to another aspect of the present invention, a cleaning method of a plasma processing apparatus according to the present invention is characterized in that an electromagnetic wave having a frequency of 1 GHz or less is output from an electromagnetic wave source, and the electromagnetic wave is transmitted to a conductor bar. The electromagnetic wave transmitted to the conductor bar is transmitted to the dielectric plate held by the metal electrode on the inner wall of the processing container, and is discharged to the inside of the processing container, and the metal electrode is formed through the dielectric plate. a hole is connected to the conductor bar, and at least a portion is exposed from a surface of the dielectric body on the object side of the dielectric body in a state of being adjacent to a surface of the dielectric body on the object side, and is discharged by the surface The electromagnetic wave is used to excite the washing gas introduced into the processing container, and the plasma processing device is washed. Thereby, for example, by using an electromagnetic wave having a frequency of 1 GHz or less, even if it is 2. 4 A certain degree of power of electromagnetic waves at a frequency of 5 GHz. In the state of a single gas, the surface wave does not expand, and it is impossible to excite a uniform and stable plasma -9-200911040 F-series single gas, or to make uniform and stable electricity The prize is inspired. Thereby, the power of the practical electromagnetic wave can be utilized to cause the scrubbing gas to be excited to wash the inside of the plasma processing apparatus by the plasma thus generated. [Embodiment] (First Embodiment) Hereinafter, a description will be given of a vertical cross section of a schematic display of a plasma processing apparatus according to a first embodiment of the present invention. 2 is a cross section 0-0) and FIG. 2 showing the top surface of the processing container will be described. In the following description and drawings, constituent elements having the same configurations and functions are denoted by the same reference numerals, and redundant description is omitted. (Configuration of Plasma Processing Apparatus) The plasma processing apparatus 10 has a processing container 100 for plasma-treating a glass substrate (hereinafter referred to as "substrate G"). The processing container 100 is composed of a container body 200 and a lid 300. The container body 200 has a bottomed cubic shape in which an upper portion thereof is opened, and the opening is closed by the lid body 00. A 〇-shaped ring 205 is provided on the contact surface of the container body 200 and the lid body 00, whereby the container body 200 and the lid body 00 are sealed to form a processing chamber u. The container body 200 and the lid 300 are made of, for example, metal such as aluminum, and are electrically grounded. A susceptor 1 0 5 (platform) for placing the substrate G is provided inside the processing container 100. The susceptor 1 〇 5 is made of, for example, aluminum nitride, and -10-200911040 has a power supply unit 11 and a heater 1 15 . The power supply unit 1 1 连接 is connected to the high-frequency power source 1 2 5 via an integrator 1 2 0 (for example, a capacitor). Further, the power supply unit 110 is connected to the high-voltage DC power supply 1 35 via the line 圏1 300. The integrator 1 220, the high-frequency power source 1 2 5, the coil 1 30 0, and the high-voltage DC power source 1 3 5 are provided outside the processing container 1 〇 . Moreover, the high frequency power source 125 and the high voltage DC power source 13 5 are grounded. The power supply unit 110 applies a predetermined bias voltage to the inside of the processing container 100 by the high-frequency power output from the high-frequency power source 125. Further, the power supply unit 110 can electrostatically adsorb the substrate G by a DC voltage output from the high voltage DC power supply 135. The heater 1 15 is connected to an AC power source 140 provided outside the processing container 100, and the substrate G can be held at a predetermined temperature by an AC voltage output from the AC power source 140. The susceptor 105 is supported by the support body 145, and is provided with a baffle plate 150 for controlling the flow of the process chamber U to a desired state. A gas discharge pipe 155 is provided at the bottom of the processing container 100, and a gas pump (not shown) provided outside the processing container 100 is used to discharge the gas in the processing container 1 from the gas discharge pipe 155, thereby processing the chamber U. Will be decompressed to the desired degree of vacuum. The cover 300 is provided with a plurality of dielectric plates 305, a plurality of metal electrodes 310, and an inner conductor 315a of a plurality of coaxial tubes 315. Referring to FIG. 2, the dielectric plate 305 is formed by oxidizing (AI2O3), and the substantially square plate of 148 mm×l 48 mm is Xg/ when the wavelength of the tube of the branching coaxial tube 640 is set to kg (328 mm at 915 MHz). The integer multiple of 2 (here is 1 time) -11 - 200911040 is equally spaced to the vertical and horizontal configuration. Thereby, 2 2 4 pieces (=1 4 χ 16) of dielectric plates 305 are equally arranged in 2277.  4mmx2605mm processing container top surface of 1〇〇. Thus, the dielectric plate 305 is formed into a shape having good symmetry, so that uniform plasma is easily generated in one dielectric plate 305. Further, when the plurality of dielectric plates 305 are arranged at equal intervals of an integral multiple of Xg/2, uniform microwaves can be generated when microwaves are introduced by the inner conductor 315a of the coaxial tube. Returning again to Fig. 1, the groove 300a shown in Fig. 1 is cut on the metal surface of the lid 300 to prevent the propagation of the surface wave of the conductor. Further, the conductor surface wave means a wave which propagates between the metal surface and the plasma. The tip end of the inner conductor 315a penetrating through the dielectric plate 305 is provided so that the metal electrode 310 can be exposed on the substrate G side, and the dielectric plate 305 can be held by the inner conductor 315a and the metal electrode 310. A dielectric cover 322 is provided on the surface of the metal electrode 310 on the substrate side, and the concentration of the electric field can be prevented from being further described with reference to Fig. 3 showing the cross section A - A ' - A of Fig. 2 . The coaxial tube 315 is composed of a cylindrical inner conductor (shaft portion) 315a and an outer conductor 315b, both of which are formed of metal (preferably copper). An annular dielectric body 410 having an inner conductor 315a penetrating through the center thereof is provided between the lid portion 300 and the coaxial tube 315a. The inner circumferential surface and the outer circumferential surface of the annular dielectric body 410 are provided with Ο-shaped rings 415a and 415b', whereby the inside of the processing chamber U can be vacuum sealed. The inner conductor 315a protrudes through the cover portion 300d to the outside of the process container 1 -12 - 200911040. The inner conductor 315a is lifted toward the outside of the processing container 100 by the elastic force of the spring structure j by the fixing mechanism 5 〇 构成 composed of the coupling portion 510, the spring 5 15 and the short-circuit portion 520. Further, the cover portion means a portion on the upper surface of the cover 300 and the cover 300 and the outer conductor 315b. A short-circuit portion 520 is provided in the through portion of the inner conductor 315a, and the inner conductor 315a of the shaft tube 315 and the lid portion 300d are electrically short-circuited. The short 520 is composed of a shielded spiral shielding spiral, and is provided as a vertically slidable portion conductor 315a. Further, a metal brush can also be used for the short-circuit portion 520. Thus, by providing the short-circuit portion 520, the heat flowing from the plasma to the electrode 310 can be efficiently passed to the cover through the inner conductor 315a and the short-circuit portion, so that the heating of the inner conductor 315a can be prevented, and the adjacent portion conductor 3 1 can be prevented. Deterioration of the Ο-type ring 4 1 5 a, 4 1 5 b of 5 a. Also, the short 5 20 prevents microwaves from being transmitted to the spring member 5 through the inner conductor 315a, so that abnormal discharge or power loss around the spring member 5 15 does not occur. Further, the short-circuit portion 520 prevents the shaft of the inner conductor 315a from being shaken and held. Further, in the short-circuit portion 520, a space between the vacuum-tight portion 30 0d and the inner conductor 315a and between the dielectric bodies 615 and 300d, which will be described later, and a space inside the cover portion 3 00d are formed by a meandering ring (not shown). It is filled with an inert gas to prevent impurities in the atmosphere from entering the processing chamber. The refrigerant supply source 700 of Fig. 1 is connected to the refrigerant pipe 705. The refrigerant supplied from the medium supply source 700 is circulated in the refrigerant pipe 7〇5 and re-cooled to the refrigerant supply source 700, whereby the processing container 1 can be held at a desired position. The component Yin 5 1 5 3 00d integrally causes the same road portion to be discharged from the inner metal portion 15 to the inner road portion 15, and the cover portion is firmly closed to return from the cold to the temperature 200911040. The gas supply source 800 is introduced into the processing chamber from the gas flow path in the internal conductor 315a shown in Fig. 3 via the gas path 805. The microwaves of the power of l2 〇 kW (= 60 kW x 2 (2 W/cm 2 )) output from the two microwave sources 900 are transmitted to the bifurcated waveguide 905 (refer to FIG. 4) and eight coaxial waveguide converters. 605, 8 coaxial tubes 620, each of which is connected to a coaxial tube 600 and a branching plate 610 (refer to the figure and the coaxial tube 315) of the eight branching coaxial tubes 640 (see FIG. 2) which are parallel in the back direction of FIG. A plurality of dielectric plates 305 are supplied to the processing chamber. The microwaves that are discharged to the processing chamber U are excited by the processing gas supplied from the gas supply source 〇0, and the plasma generated thereby is used to perform the desired processing on the substrate G. Plasma treatment (holding of dielectric plate by metal electrode) Next, the antenna portion (dielectric plate 3〇5, metal electrode 310) of the plasma processing apparatus 10 of the present embodiment configured as described above will be described in detail. The configuration of the coaxial tube 315) and the holding mechanism of the dielectric plate 305 using the metal electrode 310. As shown in Fig. 3 and the vicinity of the enlarged metal electrode, the coaxial tubes 315 and 600 are cylindrical inner conductors. 315a, 600a and external conductors 315b, 6 00b are formed by metal The inner conductor 315a is an example of a conductor bar. In particular, in the present embodiment, the "coaxial tube 315, 600 is formed by copper having a high thermal conductivity and electrical conductivity" to discharge heat from microwaves or plasma. The microwave electrode can be well transferred. The metal electrode 310 is formed of a metal such as aluminum (A1). Once the metal-14-200911040 electrode 310 is exposed on the plasma side, the electric field concentrates on the metal electrode near the feeding point. 310, a plasma having a higher density than the surface of the dielectric plate 305 not only impairs the uniformity of the plasma, but also the metal electrode 310 is engraved with uranium, which may cause metal contamination to occur. The electric field intensity on the surface which is substantially parallel to the substrate G becomes high. (Simulation) The electric field intensity of the microwave in the sheath layer near the surface AC of the simulation model Ρ 1, Ρ 2 and the surface Α-Ε shown in Fig. 7 is explained. In the exposed portion of the metal electrode 310, the inventors exposed the surface c parallel to the substrate G as it is on the substrate G side (Ρ1), and covered by the dielectric cover 320 to be parallel to the substrate. When the face of G is (Ρ2), the surface a~face C is obtained by simulation. The electric field intensity in the vicinity of the surface A to the surface E (that is, the electric field intensity of the microwave in the sheath layer). As is apparent from the graph of FIG. 7 showing the result, it is parallel to the substrate in the surface of the metal electrode 31〇. The electric field intensity of the surface C exposed by G is remarkably high. When the surface c parallel to the substrate G is exposed to the plasma side (P 1 ), the electric field intensity near the surface A of the lower portion of the dielectric plate is described in more detail. On the other hand, the electric field intensity near the side b of the exposed portion of the metal electrode 310 is higher as it leaves the plane A, but is lower than the electric field strength near the plane C parallel to the substrate G, parallel The electric field intensity near the surface C of the substrate 明显 is significantly higher than the other surfaces A, B. Next, the inventors carried out simulations in the case where the surface C parallel to the substrate G was covered by the dielectric cover 3 2 of aluminum oxide (P2). As a result, it is understood that -15-200911040 covers the flat portion by using the dielectric cover 32, and the electric field intensity of the flat portion is remarkably small. That is, the slope B has a stronger electric field strength, but at most half of it is not covered by the dielectric cover 32. As a result, the inventors have demonstrated that by using the dielectric cover 320 to cover the flat portion, it is possible to prevent the plasma from being concentrated and to generate a more uniform plasma. Further, as a result of comparison between P1 and P2, it is understood that the surface C parallel to the substrate G is covered by the dielectric cover 320, whereby the electric field in the vicinity of the metal electrode can be weakened, and the uniformity of the plasma can be improved. Then, in the exposed portion of the metal electrode 310 of FIG. 6, a cover using the dielectric cover 320 is formed on the surface substantially parallel to the substrate G. In particular, only one surface such as the bottom surface or the outer peripheral surface of the metal electrode is covered by the dielectric cover 320, so that the metal electrode 310 and the dielectric cover 320 can be brought into close contact with each other. Thereby, a gap is not formed between the metal electrode 3 10 and the dielectric cover 3 2 0, so that abnormal discharge can be prevented, and the plasma can be uniformly and stably generated. Moreover, since high-precision machining is not required, it is possible to reduce the cost. Further, the dielectric cover 32 is formed of a porous ceramic. The metal electrode 310 is exposed to the inner conductor 315a of the coaxial tube 315 via the through hole 305a provided in the center of the dielectric plate 305, and is exposed on the substrate side of the dielectric plate 305. The diameter of the metal electrode 310 is larger than the diameter of the inner conductor 3 1 5 a, and the face of the metal electrode 310 which is parallel to the substrate is partially adjacent to the face of the dielectric plate 305 which is parallel to the substrate G. Thereby, the dielectric plate 305 is lifted by the inner conductor 3 1 5 a in a state of being held from the substrate side by the metal electrode 310, and is firmly fixed to the processing container 100. Inner wall. In the case where the metal electrode 310 protrudes from the inner conductor 3 15a of the coaxial tube 315 to the outside, the metal electrode 310 is exposed on the substrate side of the dielectric plate 305. Further, since the metal electrode 310 is a metal, the mechanical strength is stronger than that of the dielectric member. Thereby, the metal electrode 310 can strongly hold the dielectric plate 305 regardless of the structure or the material. As shown in FIG. 6, the inside of the coaxial tube 315 is provided with the gas introduction path 3 15c which penetrates the inside of the internal conductor 315a. The gas supply source 800 shown in Fig. 1 is connected to the gas introduction path 315c via the gas path 805. The gas introduction path 315c is connected to the gas passage 310a provided inside the metal electrode 310. The gas passage 3 1 0a is an annular flow path that is divided into two, and is discharged to the dielectric cover 320 from the lower surface of the metal electrode 310. The gas that has flowed into the dielectric cover 32 is attenuated during a period of flow between the pores of the porous ceramic forming the dielectric cover 32, and is decelerated to some extent from the dielectric cover 32. The surface is fully introduced into the processing chamber U. The gas flows in a laminar manner in a regular manner, whereby a uniform and good process can be achieved. The surface on the substrate side of each dielectric plate 305 is formed in a substantially square shape, and has symmetry to the metal electrode 310. Therefore, the microwaves are uniformly discharged by a plurality of dielectric plates 305 which are integrally disposed on the top surface. As a result, plasma can be more uniformly generated under the dielectric plate 305. Each of the dielectric plates 305 is formed of alumina (ai2o3). (Optimal shape of metal electrode and dielectric body cover) In order to prevent abnormal discharge from occurring, the inventors obtained a dielectric body cover formed of metal electrode 3 10 and alumina by simulation as follows: -17-200911040 The optimal shape of 3 20 . The shape of the metal electrode 310 is a basic shape of a width D and a height Η shown in Figs. 15 and 16 and a circular arc at the tip end portion, and a conical shape having a diameter of 3 2 mm and a height 所示 shown in Figs. 17 and 18 . The conical shape of 32 mm in diameter and 10 mm in height shown in Fig. 19, and the hemispherical shape shown in Fig. 20 are the objects of simulation. The combined shape of the metal electrode 310 and the dielectric cover 315 is a conical shape as shown in Fig. 21, and the conical front end shown in Fig. 22 and Fig. 23 is a planar shape as a simulation object. (Simulation result) The distribution of the electric field intensity under the metal electrode 310 and the dielectric plate 305 obtained by performing the simulation using the above conditions will be described with reference to Figs. 15 to 23. First, the inventors fixed the width D to 32 mm under the above-described simulation conditions, and changed the Η Η to 4 mm, 7 mm, and 1 mm. Fig. 15 shows the electric field intensity of the lower portion of the dielectric plate 305 in this case. Γ is the absolute 値 of the reflection coefficient (phase in parentheses). The reflection coefficient is an index indicating the reflection of the microwave seen on the side of the metal electrode. From the results shown in Fig. 15, the inventors have found that the basic shape is a horizontal plane below the metal electrode 310, and the electric field becomes strong. Further, the inventors have confirmed that even if the height of the metal electrode 310 is changed, the concentration of the electric field is not improved. Thus, as shown in Fig. 16, the inventors fixed the height η at 7 mm to make the width D (the diameter of the metal electrode). ) changed to 24mm, 32mm, 40mm *18- 200911040. However, according to the result, the concentration of the electric field is not improved at the level below the metal electrode. Next, the inventors, as shown in Fig. 17, set the metal electrode 310 to a conical shape, and change the height Η to 7' 1 〇, umm. As a result, it is understood that the concentration of the electric field is improved' particularly in the slope of the metal electrode 310, and it is difficult to concentrate the electric field. Further, in the range of 7,1, and Umm described above, the height of the metal electrode 310 is increased, and the electric field is less likely to concentrate. However, as shown in Fig. 18, when the height η is further increased to 16, 19, and 25 mm, it is understood that the electric field is further increased at the tip end of the metal electrode 3 1 〇. Next, the inventors, as shown in Fig. 19, obtained the distribution state of the conical metal electrode 3 10 and the dielectric plate 3 0 5 when the dielectric constant h of the plasma fluctuated by simulation. At this time, the diameter of the metal electrode 3 10 of the conical diameter was set to 32 cm ', and the degree of sound was fixed at 10 mm. In addition, the dielectric loss tangent Τ δ is set to -0. 1. The dielectric constant h of the plasma and the dielectric loss tangent Τ δ represent the state of the plasma. The dielectric constant h of the plasma is a state indicating the polarization of the electric paddle, and the dielectric loss tangent Ts of the plasma means that the gas is excited. The state of charge loss caused by the resistance in the generated plasma. In Fig. 19, the dielectric constant of the plasma is converted into _4 〇, -2 0, -10. It means that the higher the dielectric constant h of the plasma, the higher the density of the plasma. From the results shown in Fig. 19, the inventors confirmed that the lower the density of the plasma, the stronger the electric field of the metal electrode 310 and the microwave does not expand. Next, the inventors, as shown in Fig. 20, set the shape of the metal electrode 310 to a hemispherical shape of 32 mm in diameter. In this case, no concentration of the electric field was observed under the metal -19-200911040 electrode 310 and the dielectric plate 305. However, the semi-spherical metal electrode 310 is higher in height than the conical metal electrode 3 1 0. Also, forming the metal electrode 310 into a hemispherical shape is more difficult to process than forming a conical shape. Next, as shown in FIG. 21, the inventors provided a conical dielectric cover 32 on the surface of the metal electrode 310 horizontal to the object to be processed, and the exposed faces of the metal electrode 310 and the dielectric cover 320 are provided. In a roughly conical shape. The diameter of the bottom surface of the metal electrode 310 was 54 mm, the height was 7 mm, and the height from the bottom surface of the metal electrode 310 to the front end portion of the dielectric cover 315 was 27 mm. In this case, no concentration of the electric field was observed in the vicinity of the metal electrode 310. Further, as shown in Figs. 22 and 23, the inventors simulated the electric field concentration when the tip end of the dielectric cover 320 was formed into a planar structure. Fig. 2 2 shows that the diameter of the bottom surface of the metal electrode 310 is 54 mm, the height is set to 7 mm, and the height W of the dielectric cover 326 is changed to 12, 1 〇, 8, or 6 mm. As a result, the inventors confirmed that when the thickness of the dielectric cover is l〇mm or more, no concentration of the electric field is observed. So the inventors hypothesized the model shown in Figure 23. That is, the diameter of the bottom surface of the metal electrode 310 is set to 54 mm', the height is set to 7 nm, and the height W of the dielectric cover 320 is changed to 10 mm, so that the dielectric constant % of the plasma is changed to -10, -20. , -40, -60. As a result, when the thickness of the dielectric cover 32 is fixed to 10 mm, the electric field concentration in the vicinity of the metal electrode 3 1〇 is not observed even at a high density. -20- 200911040 (Experiment) Therefore, the inventors conducted experiments based on the above simulation results. The experimental plasma conditions were the next 4 systems. (1) Ar single gas: 3,1,0. 5,0_1,0. 05Torr (2) Ar/02 mixed gas: Ar/02=1 60/40, 1 00/1 00, 0/200sccm (3) Ar/N2 mixed gas: Ar/N2=1 60/40, 1 00/1 00, 〇 / 200sccm (4) Ar / NF3 mixed gas: Ar / NF3 = 1 80 / 20, 160 / 40, 1 00 / 100sccm For the results of this experiment, a brief description of the matters needing attention. When the metal electrode 310 has a conical shape, the electric field is not concentrated in the vicinity of the metal electrode 310, and the dependence on the pressure of the Ar gas, such as 〇2, N2, and NF3, is hardly obtained, and good results can be obtained. When the metal electrode 310 has a hemispherical shape, when the gas of 02 or NF3 is supplied together with the argon gas, the pressure dependency on 02 and NF3 is relatively high. When the dielectric cover 320 is mounted on the metal electrode 310 to form a conical shape, the dielectric cover 3 20 (here, alumina) is darker than the metal electrode 310. Further, it is understood that the luminance of the aluminum portion of the metal electrode 310 has a gas type dependency. In terms of basic shape, the pressure dependence of 〇2 is relatively high. Based on the above findings, the inventors derived the conclusions that followed. First, the metal electrode 310 is preferably formed into a substantially conical shape or a substantially hemispherical shape, particularly a substantially conical shape, in order not to concentrate the electric field. Further, when the dielectric cover 320 is attached to the metal electrode 310, it is preferable that the exposed surfaces of the metal electrode 310 and the dielectric cover 32 are formed into a substantially conical shape. At this time, when the front end of the dielectric body cover 320 is formed to have a flat surface ratio, the electric field is less concentrated at the front end, which is preferable. Further, it is preferable that the height of the dielectric body cover 320 on which the front end is formed to be flat -21 - 200911040 is perpendicular to the substrate G, and the height is preferably 10 mm or less. (Protective film) The surface of the metal electrode 310 is covered with a protective film of yttrium oxide (Y2〇3), alumina (Α12〇3), and Tefl〇n (registered trademark) having high uranium resistance. Thereby, the metal electrode 310 can be prevented from being corroded by the F-based gas (fluorine radical) or the chlorine-based gas (chlorine radical). Specifically, the material of this protective film is described. The protective film coated on the surface of the metal electrode 310 may be a film made of a metal oxide film containing aluminum as a main component, that is, a film thickness of 1 〇 nm or more, and the amount of water released from the film is 1E18. Molecular oxide film of Mn/cm2 or less (ΙχΙΟ18/cm2 or less). In addition, in the following description, the number of molecules is represented by E-Notation. This moisture is adsorbed from the surface of the metal oxide film, and the amount of released water is proportional to the effective surface area of the metal oxide film. Therefore, in order to reduce the amount of released water, it is effective to minimize the effective surface area formation. Therefore, it is preferable that the metal oxide film is a barrier type metal oxide film having no pores on the surface. In a metal containing aluminum as a main component in which the content of a part of the element is lowered, a metal oxide film formed by using a specific chemical liquid is not formed with voids or gas, and is oxidized by heating. The occurrence of cracks in the film or the like is suppressed, whereby the chemical liquid such as nitric acid or fluorine and the halogen gas, particularly chlorine gas, have good corrosion resistance. -22- 200911040 The amount of water released from the metal oxide film means the metal oxide film per unit area released from the film during the period of 23 ° C for 10 hours, and then the temperature is raised at 200 ° C for 2 hours. The number of molecules of water released [molecule/cm2] (measured in the temperature rise time). The amount of released water can be determined, for example, by using an atmospheric pressure ionization mass spectrometer (UG-302P manufactured by Renesas Eastern Japan) to determine that the base metal oxide film is anodized with a metal containing aluminum as a main component in a chemical solution having a pH of 4 to 10%. It is desirable to obtain a metal whose purity is mainly composed of aluminum. Preferably, the chemical conversion liquid is at least one selected from the group consisting of nitric acid, phosphoric acid, an organic carboxylic acid, and the like. Further, it is preferred that the chemical conversion liquid contains a nonaqueous solvent. Further, it is preferable that the metal oxide film is heat-treated with 1 Torr or more in the anodization. For example, it can be annealed in a heating furnace of 100 ° C or more. However, the metal oxide film is more preferably treated by heating at 150 ° C or more in anodization. Above and below the metal oxide film, there may be other layers as needed. For example, a film of one or two or more kinds selected from metal, metal ceramics, and ceramics as a raw material may be formed on the metal oxide film to have a multilayer structure. Further, the metal containing aluminum as a main component means a metal containing 5 % by mass or more of aluminum. It can also be pure aluminum. It is preferable that the metal contains 80% by mass or more of aluminum, more preferably 90% by mass or more of aluminum, and more preferably 94% by mass or more. Further, the metal ' containing aluminum as a main component is preferably at least one metal selected from the group consisting of magnesium, titanium and zirconium. In addition, the metal containing high-purity aluminum as a main component means a metal containing aluminum as the main component of -23-200911040, and the total content of specific elements (iron, copper, manganese, zinc, chromium) is 1% or less. . Further, the metal containing high-purity aluminum as a main component preferably contains at least one metal selected from the group consisting of magnesium, titanium and zirconium. As described above, according to the plasma processing apparatus 1 of the present embodiment, the metal electrode 310 is connected to the coaxial tube 315 via the through hole 305a of the dielectric plate 305, and is protruded from the inner conductor 315a. The surface on the substrate side of the electric plate 305. Thereby, the dielectric electrode plate 305 can be firmly held by the metal electrode 310. Further, by providing the dielectric cover 320 on one surface of the metal electrode 310, the electric field in the vicinity of the metal electrode can be weakened, and the uniformity of the plasma can be improved. Further, in the plasma processing apparatus of the present embodiment, the dielectric plate is formed of 224 dielectric plates 305. In this way, since the dielectric plate is composed of a plurality of dielectric plates 305, it is possible to provide a plasma processing apparatus 10 which is easy to maintain, such as replacement of components, and which has a large area and high expansion property corresponding to the substrate. . (Modification of First Embodiment) Next, modifications 1 and 2 of the metal electrode 3 1 本 according to the present embodiment will be described. (Variation 1) From the above simulation results, it is understood that the electric field concentrates on the exposed portion of the metal electrode 3 1 ,, particularly on the surface parallel to the substrate G. Therefore, the exposed portion of the metal electrode 310 is preferably formed in a shape in which the surface of the substrate G does not have 2P rows. Such a modification may be, for example, a conical shape of Fig. 8 and may be a hemispherical shape as shown in Fig. 9 . The metal electrode 310 shown in Figs. 8 and 9 has the advantage that since there is no dielectric body cover, it is advantageous for cost, and since the surface of the substrate G is not parallel, it is difficult to concentrate the electric field. When the exposed portion of the metal electrode 310 is conical as shown in Fig. 8, the gas can be introduced, for example, obliquely 45 degrees from the six gas passages 310a which are disposed at equal intervals. Further, if a circular shape is given to the tip end of the conical shape shown in Fig. 8, the concentration of the electric field can be more effectively prevented. Further, when the exposed portion of the metal electrode 310 is a hemispherical shape as shown in Fig. 9, the gas can be radially introduced, for example, from the gas passages 3 1 to 〇a which are radially spaced at equal intervals. Further, as shown in Fig. 1A, the gas passage 3 1 0 a formed on the metal electrode 310 may be introduced with a gas introduced in a direction parallel to the substrate G or a gas introduced in a direction perpendicular to the substrate G. Further, the dielectric cover 320 of Fig. 1A is formed of alumina ceramic. Further, when the dielectric ceramic cover 32 of the porous ceramic is provided in the exposed portion of the metal electrode 310, as shown in FIG. 6, the gas passage 310a of the metal electrode 310 can be introduced into the processing chamber via the dielectric cover 320. U. (Modification 2) The X-X cross section of Fig. 11 is shown in Fig. 12 . Fig. 11 is a view in which Fig. 12 is cut in a Y-Y plane. As shown in FIG. 11, the metal electrode 3 is extended in such a manner that it can be inserted into the through hole 3〇5a of the dielectric plate 305, and the inner conductor 315a of the coaxial tube 315 and the metal electrode 310 are extended. It is connected by screwing the male screw 3 1 5 d provided at the end of the inner conductor 3 15 a and the base female screw 310 b provided on the metal electrode 3 。. In the case of the annular dielectric body 410 and the 0-ring 415b of Fig. 6, first, the Ο-shaped ring 415b is fitted, and then the annular dielectric body 410 is mounted. When the ring-shaped dielectric body 410 is mounted, sometimes the 〇-shaped ring 41 5b is injured. However, with respect to the configuration of Fig. 11, the upper corner of the dielectric plate 305 is tapered. Thereby, the structure in which the dielectric plate 305 is smoothly inserted and the 0-ring 41 5b is hardly damaged at the time of mounting the dielectric plate 305 is formed. Further, in the present modification, the dielectric plate 305 and the annular dielectric body 410 shown in Fig. 3 may be integrally formed as shown in Fig. 11 . Further, instead of providing two Ο-shaped rings 415a and 415b between the inner circumferential surface of the dielectric plate 305 and the coaxial tube 315 and between the outer circumferential surface of the dielectric plate 305 and the lid 300, An Ο-ring 415b is provided between the inner peripheral surface of the dielectric plate 305 and the metal electrode 310, and an O-ring 41 5a is provided between the outer peripheral surface of the dielectric plate 305 and the lid 300. Thereby, the dielectric plate 305 can be firmly held on the top surface by the metal electrode 310 and the inner conductor 3 15a, and the inside of the processing chamber U can be vacuum-sealed. In the above embodiment, the operations of the respective units are mutually correlated, and the series of operations can be replaced while considering the correlation with each other. Further, the embodiment of the invention of the plasma processing apparatus can be used as a method of using the plasma processing apparatus or a washing method of the plasma processing apparatus by such replacement. -26- 200911040 (Definition of Frequency) The plasma processing apparatus 10 of each of the above embodiments outputs microwaves having a frequency of 1 GHz or less from the microwave source 900, thereby achieving good plasma processing. The reason is explained below. The plasma CVD process in which the film is deposited on the surface of the substrate by a chemical reaction is not only the surface of the substrate, but also the film is adhered to the inner surface of the processing container. Once the film attached to the inner surface of the processing container is peeled off and adhered to the substrate, the yield is deteriorated. Further, the impurity gas generated from the film adhering to the inner surface of the processing container may be taken into the film to deteriorate the film quality. Therefore, in order to carry out a high quality process, it is necessary to periodically wash the inside of the reaction chamber. The washing of the ruthenium oxide film or the tantalum nitride film is often performed by using F radicals «F radicals to etch these films at high speed. The F radical is excited by a gas containing F such as NF3 or SF6, which is produced by decomposing gas molecules. If the plasma is excited by a mixed gas containing F and 0, F or krypton will recombine with the electrons in the plasma, so the electron density in the plasma will decrease. In particular, in all materials, the plasma is excited by a gas containing F having the largest electronegativity, and the electron density is remarkably lowered. In order to prove this, the inventors have a microwave frequency of 2 · 4 5 GH z, microwave power density pressure〗 3. The condition of 3 Pa is used to generate plasma, and the electron density is measured. As a result, the electron density is 2. in the case of Ar gas. 3 X 1 0 12 cnT3, in contrast, in the case of N F 3 gas, it is smaller than a single digit. 3x l〇1〇cm-3. As shown in Figure 13, if the power density of the microwave is increased, the sub-density of the electricity in the plasma will increase. Specifically, if the power density is made from 1. 6 W/cm2 formation 2. 4W/cm2', the electron density in the plasma is from 6. 3xl01Gcm_3 is increased to UxloHcm·3. On the other hand, if applied 2. When the microwave is 5 W/cm2 or more, the dielectric plate is heated and ruptured or the risk of abnormal discharge in each part is increased, which is uneconomical, so it is practically difficult to form a NF3 gas. 4 xlO 11 Cm_3 or more electron density. That is, in order to produce uniform and stable plasma even in NF3 gas with extremely low electron density, the surface wave resonance density ns must be 1. 4 X 1 0 1 1 Below cnT3. The surface wave resonance density ns is the lowest electron density that the surface wave can propagate between the dielectric plate and the plasma. If the electron density is smaller than the surface wave resonance density ns, the surface wave does not propagate, so only the excitation pole can be excited. Non-uniform plasma. The surface wave resonance density n s is a cutoff density n having the formula (1). And the proportional relationship shown by the formula (2). Nc = s〇me(〇2/e2 .  .  · (1) ns = nc( 1 + εΓ) · · · - (2) Here, ε〇 is the dielectric constant of vacuum, ^^ is the mass of electrons, ω is the angular frequency of microwaves, and e is the basic charge, ^ It is the specific dielectric constant of the dielectric plate. From the above formula (1) (2), the surface wave resonance density ns is proportional to the square of the microwave frequency. Therefore, by selecting a low frequency, even at a lower electron density, the surface wave propagates to obtain a uniform plasma. For example, if the microwave frequency is set to 1 /2 ', a uniform plasma can be obtained even at an electron density of 1/4, and the low frequency of the microwave frequency is extremely effective for the expansion of the process window. -28- 200911040 Surface wave resonance density ns and Practical electron density when using NF3 gas The equal frequency of OloHcnT3 is 1 GHz. That is, if 1 GHz or less is selected as the frequency of the microwave, which gas is used can excite a uniform plasma at a practical power density. As described above, for example, the microwave source 900 outputs a microwave having a frequency of 1 GHz or less, whereby the object to be processed (for example, the substrate G) can be subjected to a good plasma treatment. For example, 'the method of using the plasma processing apparatus is to output the microwave having a frequency of 1 GHz or less by the microwave source 900 of the plasma processing apparatus 10 of the above embodiment, thereby transmitting the microwave outputted from the microwave source 9000 to The coaxial tube (for example, the coaxial tube 600, 315) is connected to the inner conductor 315a of the coaxial tube by the metal electrode 310 (the metal electrode 3 10 is connected via the through hole 305 a formed in the dielectric plate 305) The dielectric plate 305 is held on the inner wall of the processing container 100 while at least a portion is exposed from the surface on the substrate side of the dielectric plate 305 in a state of being adjacent to the surface on the substrate side of the dielectric plate 305. The microwaves transmitted through the coaxial tube 315 are transmitted to the inside of the processing chamber 1 , and the processed gas introduced into the processing chamber 1 is excited by the microwaves to be discharged, and the desired plasma is applied to the object to be processed. deal with. Further, 'for example, a washing method of a plasma processing apparatus, which outputs a microwave having a frequency of 1 GHz or less by the microwave source 900 of the plasma processing apparatus 10 of the above-described embodiment, thereby outputting the microwave source 9〇〇 The microwave is transmitted to the coaxial tube (for example, the coaxial tube 600, 315), and is connected to the coaxial tube by the metal electrode 31 0 (the metal electrode 310 is connected to the coaxial tube via the through hole 3〇5a formed in the dielectric plate 3〇5) The inner conductor 3 1 5a is held in the processing container 1 by at least a portion adjacent to the surface on the substrate side of the dielectric plate 305 in the state of the substrate side of the dielectric plate -29-200911040 305. The dielectric plate 305 of the inner wall of the crucible transmits the microwaves transmitted to the coaxial tube 315 and is discharged to the inside of the processing container 100, and the washing gas introduced into the processing container 1 is excited by the discharged microwaves. The plasma treatment device is washed. In addition, in the Electrical Society, Microwave Plasma Investigation Special Committee, "Microwave Plasma Technology j 〇hmsha, Ltd. In the preface to be published on September 25, 2005, the "microwave band" refers to the frequency region of 300 MHz or more in the UHF band. Therefore, in this specification, the frequency of the microwave is also 300 MHz or more. In the above embodiment, although the microwave source 900 that outputs the microwave of 915 MHz is used, the output may be 8 96 MHz, 922 MHz, or 2. A 45 GHz microwave microwave source. And the 'microwave source' is an electromagnetic wave source equivalent to generating electromagnetic waves for exciting the plasma. The following is a brief summary of the association between the members or members of the respective embodiments described above. For example, the exposed surface of the metal electrode may be formed into a substantially conical shape or a substantially hemispherical shape. At this time, the exposed portion of the metal electrode may be disposed adjacent to a part or all of the surface of the dielectric body on the side of the object to be processed. Thereby, the dielectric plate can be firmly held by the metal electrode. Further, at least the surface of the exposed portion of the metal electrode that is substantially parallel to the processing body may be covered by the dielectric cover. The surface of the dielectric body cover is difficult to concentrate the electric field. Therefore, by using the dielectric cover to cover the exposed portion of the metal electrode, the electric field can be concentrated on the surface of the metal electrode near the feeding point, -30-200911040, and a plasma having a high density is generated in the vicinity of the metal electrode. Can produce a uniform plasma. The dielectric body cover can also be formed by a porous ceramic. Thereby, the gas can be introduced into the inside of the processing container by flowing a gas between the pores of the dielectric cover formed of the porous ceramic. The exposed faces of the metal electrodes and the dielectric cover may also have a substantially conical shape. The front end of the dielectric cover can also be formed into a flat surface. The height of the dielectric body cover perpendicular to the direction of the object to be processed may be within 10 mm. Thereby, the electric field is not concentrated on the surface of the dielectric cover, which produces uniform plasma and can effectively avoid metal contamination. The through hole of the dielectric plate may be provided at substantially the center of the dielectric plate. Thereby, the metal electrode can be utilized to balance the dielectric plate well. Further, electromagnetic waves can be uniformly supplied from the coaxial tube to the processing container through the dielectric plate. The surface of the above metal electrode may also be covered with a protective film. For example, the surface of the above metal electrode can be protected by a protective film of yttrium oxide (Y 2 〇 3 ), aluminum oxide (Al 2 〇 3 ), or Tefl 〇 n (Teflon) (registered trademark) having high corrosion resistance. Thereby, the metal electrode can be prevented from being corroded by the F-based gas (fluorine radical) or the chlorine-based gas (chlorine free radical). A gas path of a flowing gas may be formed inside the coaxial tube, and the metal electrode may be in communication with a gas introduction path formed inside the coaxial tube. The gas flowing through the gas introduction path may be introduced into the processing container. The internal gas path. Thereby, the gas is introduced from the gas passage provided in the metal electrode to the inside of the container -31 - 200911040. Since the metal does not transmit electromagnetic waves, the gas passage of the gas in the metal electrode is not excited. Thereby, plasma generation in the metal electrode can be avoided. Further, the gas passage formed in the metal electrode is formed such that a gas can be introduced in a direction substantially parallel to the object to be processed, or a gas can be introduced in a direction in which the object to be processed is substantially perpendicular, or can be introduced radially. The way the gas is formed. The gas may be directly introduced into the inside of the processing container from the gas passage β formed in the metal electrode. Further, gas may be introduced into the inside of the processing container from the gas passage through the dielectric cover formed of the porous ceramic. In particular, when the gas is supplied from the porous ceramic, the gas is attenuated during the period of flowing between the pores of the porous ceramic, and is released from the surface of the porous ceramic in a state of being decelerated to some extent. Thereby, it is possible to prevent the gas in the processing container from being diffused in use, and as a result, the gas can be prevented from being excessively dissociated to generate the desired plasma. The above dielectric plate may be formed of alumina. The dielectric plate may be formed of a plurality of dielectric plates, and the plurality of metal electrodes may be provided in plurality corresponding to the plurality of dielectric plates. As a result, since the dielectric plate is composed of a plurality of dielectric plates, it is possible to provide a plasma processing apparatus which is easy to maintain, such as replacement of components, and which has a large area and high expandability corresponding to the substrate. Further, each of the dielectric plates of the plurality of dielectric plates can be formed such that the surface on the side of the processing body can be formed in a large rectangular shape. Each of the dielectric plates of the plurality of dielectric plates can be formed by a surface on the side of the processing body capable of forming a substantially square shape -32-200911040. Therefore, since each of the dielectric plates has a symmetrical shape, the electromagnetic waves are uniformly discharged by a plurality of dielectric plates which are entirely disposed on the top surface. As a result, plasma can be more uniformly generated under the dielectric plate. The electromagnetic wave source described above can output electromagnetic waves having a frequency of 1 GHz or less. By this, the cut-off density can be reduced, the process window can be enlarged, and a single device can be used to implement various processes. The side of the dielectric plate may not be in contact with the plasma during the process. Once the electric plate is in contact with other members around the dielectric plate, a gap is formed and the plasma enters the gap, so that an abnormal discharge occurs. In order to eliminate the gap, high-precision machining is required, but the cost is high. However, by this, the side surface of the above dielectric plate is in contact with the plasma. Thereby, no gap is formed around the dielectric plate, and high-precision machining is not required, and the cost can be reduced. The preferred embodiments of the present invention have been described above with reference to the drawings, but are of course not limited to the examples of the present invention. As long as it is the person skilled in the art, various modifications or modifications can be made within the scope of the patent application, and these are of course within the technical scope of the present invention. For example, the plasma processing apparatus of the present invention may also be a plasma processing apparatus having a plurality of dielectric plates 3〇5 having an angular shape, or as shown in FIG. 14, a circular dielectric having a large area. The plasma processing device of the body plate 305. Thereby, one dielectric plate 305 can be disposed on the top of the processing container 100 by one metal electrode 310 connected to one of the inner conductors 3'5a. Thus, in the same process as in the case of a plasma processing apparatus having a plurality of dielectric plates 305, the side faces of the dielectric plates 305 are in contact with the plasma. -33- 200911040 If it is in such a state, the dielectric plate 305 can be prevented from entering the dielectric plate when it is in contact with other members (for example, a metal frame or the like) on the side of the dielectric plate 305. 3 〇5 and the gap between these components' phenomenon of abnormal discharge. Further, an annular dielectric member 420 having an inner conductor 315a passing through the center of the annular dielectric member 410 is provided between the lid 300 and the inner conductor 315a. A part of the outer peripheral surface and the inner peripheral surface of the annular dielectric member 420 is buried in the lid body 300 and the inner conductor 315a. A meandering ring 425 is provided between the annular dielectric body 420 and the lid 300 toward the inner surface (lower surface) of the processing container. As described above, in the plasma processing apparatus 10 shown in Fig. 14, a 〇-shaped ring 42 5 is provided in order to lift the dielectric plate 305. Thereby, the inner conductor 3 1 5 a of the coaxial tube can be pushed up to the outside of the processing container 1 〇 by the elastic force (rebounding force) of the processing cartridge 1 〇 by the 〇-ring 425. Further, since two annular dielectric bodies 410 and 420 are provided, the inner conductor 315a holding the dielectric plate 305 is supported at two points, so that the shaft of the coaxial tube 315 can be prevented from being shaken. As a result, the dielectric plate 305 can be firmly adhered to the inner wall of the cover body 300 by the elastic force of the spring and the guiding function of the inner conductor 315a. As a result, abnormal discharge due to the gap between the inner wall of the lid body 3 and the dielectric plate 305 can be avoided, and the plasma can be uniformly and stably generated. Further, the plasma processing apparatus of the present invention can also process a large-sized glass substrate circular sand wafer or an angular SOI (Silicon On Insulator) substrate. Further, the plasma processing apparatus of the present invention can perform all plasma treatments such as a film formation process, a diffusion process, an etching process, and an ashing process. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view of a plasma processing apparatus according to a first embodiment of the present invention. Fig. 2 is a top plan view showing the plasma processing apparatus of the same embodiment. Fig. 3 is a view showing a branching waveguide of the same embodiment. Fig. 4 is a view showing a fixing mechanism of a dielectric plate of the same embodiment and its vicinity. Fig. 5 is a view showing a branching plate of the same embodiment. Fig. 6 is a view showing a metal electrode of the same embodiment and its vicinity. Fig. 7 is a graph showing the relationship between the shape of a metal electrode and the electric field intensity in the same embodiment. Fig. 8 is a view showing a modification of the metal electrode of the same embodiment. Fig. 9 is a view showing another modification of the metal electrode of the same embodiment. Fig. 1 is a view showing another modification of the metal electrode of the same embodiment. Fig. 11 is a view showing another modification of the metal electrode of the same embodiment. Fig. 12 is a cross-sectional view taken along the line X-X of Fig. 11; Fig. 13 is a graph showing the relationship between the power density of microwaves and the electron density of plasma. Fig. 14 is a modification showing another example. Fig. 15 is a simulation result for optimizing the shape (basic shape) of the metal electrode. Fig. 16 is a simulation result of other -35-200911040 used to optimize the shape (basic shape) of the metal electrode. Fig. 17 is another simulation result for optimizing the shape (conical shape) of the metal electrode. Fig. 18 is a simulation result for optimizing the shape (conical shape) of the metal electrode. Fig. 19 is another simulation result for optimizing the shape (conical shape) of the metal electrode. Fig. 20 is a simulation result for optimizing the shape (hemispherical shape) of the metal electrode. Fig. 21 is a simulation result for optimizing the shape of the dielectric cover. Figure 2 2 is another simulation result for optimizing the shape of the dielectric cover. Figure 23 is another simulation result for optimizing the shape of the dielectric cover. [Main component symbol description] 1 电: Plasma treatment Device 100: processing container 200: container body 3: cover 300a: groove 3〇5: dielectric plate 3〇5a: through hole 3 1 0: metal electrode -36- 200911040 Conductor dielectric 425 : Ο type Rings 315, 600: coaxial tube 315a, 600a: internal 3 20: dielectric body cover 4 1 0, 4 2 0 : annular 205, 415a, 415b, 5 00: fixing mechanism 5 2 0 : short-circuit portion 6 〇 0 : coaxial tube 600a: inner conductor 6 1 〇: branching plate 8 00 : gas supply source 9 00 : microwave source 905 : branching waveguide U: processing chamber - 37

Claims (1)

200911040 十、申請專利範圍 1. 一種電漿處理裝置，係藉由電磁波來使氣體激發而 電漿處理被處理體之電漿處理裝置，其特徵係具備： 處理容器； 電磁波源，其係輸出電磁波； 導體棒，其係使從上述電磁波源輸出的電磁波傳送； 介電體板，其係形成有貫通穴，使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極，其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒，至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 露出， 上述金屬電極的露出面的其中一面係以介電體罩所覆 蓋。 2. —種電漿處理裝置，係藉由電磁波來使氣體激發而 電漿處理被處理體之電漿處理裝置，其特徵係具備： 處理容器； 電磁波源，其係輸出電磁波； 導體棒，其係使從上述電磁波源輸出的電磁波傳送； 介電體板，其係形成有貫通穴，使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極，其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒，至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 -38- 200911040 露出， 上述金屬電極的露出面係不具有對被處理體大略平行 的面。 3 .如申請專利範圍第1項之電漿處理裝置，其中，上 述金屬電極的直徑係比上述導體棒的直徑大。 4 ·如申請專利範圍第1項之電槳處理裝置，其中，上 述金屬電極的露出面係形成大略圓錐形狀或大略半球形狀 〇 5 .如申請專利範圍第1項之電漿處理裝置，其中，上 述金屬電極的露出面的其中，對處理體大略平行的面係藉 由上述介電體罩所覆蓋。 6 _如申請專利範圍第1項之電漿處理裝置，其中，上 述介電體罩係藉由多孔質陶瓷所形成。 7 .如申請專利範圍第1項之電漿處理裝置，其中，上 述介電體板的貫通穴係設於上述介電體板的大略中央。 8 ·如申請專利範圍第1項之電漿處理裝置，其中，上 述金屬電極的表面係以保護膜所覆蓋。 9 .如申請專利範圍第1項之電漿處理裝置，其中，在 上述導體棒的内部形成有流動氣體的氣體導入路， 在上述金屬電極形成有與形成於上述導體棒的内部的 氣體導入路連通，將流動於上述氣體導入路的氣體導入至 上述處理容器的内部之氣體通路。 10.如申請專利範圍第9項之電漿處理裝置，其中，形 成於上述金屬電極的氣體通路係形成可在對被處理體大略 -39- 200911040 平行的方向導入氣體。 1 1 .如申請專利範圍第9項之電漿處理裝置，其中，形 成於上述金屬電極的氣體通路係形成可在對被處理體大略 垂直的方向導入氣體。 1 2 .如申請專利範圍第9項之電漿處理裝置，其中，形 成於上述金屬電極的氣體通路係形成可放射狀導入氣體。 1 3 .如申請專利範圍第9項之電漿處理裝置，其中，上 述氣體係從上述氣體通路直接導入至上述處理容器的内部 〇 1 4 ·如申請專利範圍第9項之電漿處理裝置，其中，上 述氣體係從上述氣體通路經由上述介電體罩來導入至上述 處理容器的内部。 1 5 ·如申請專利範圍第1項之電漿處理裝置，其中，上 述介電體板係設置複數個， 上述金屬電極係對應於上述複數的介電體板而設置複 數個。 1 6 .如申請專利範圍第1 5項之電漿處理裝置，其中， 上述複數的介電體板的各介電體板係形成被處理體側的面 可成大槪矩形狀。 1 7 .如申請專利範圍第1 6項之電漿處理裝置，其中， 上述複數的介電體板的各介電體板係形成被處理體側的面 可成大略正方形。 1 8 ·如申請專利範圍第1項之電漿處理裝置，其中，上 述電磁波源係輸出頻率爲1 GHz以下的電磁波。 -40- 200911040 1 9 ·如申請專利範圍第1項之電漿處理裝置，其中，製 程中，上述介電體板的側面係接觸於電漿。 2 0 .—種天線，其特徵係具備： 導體棒，其係使電磁波傳送； 介電體板，其係形成有貫通穴’使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極’其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒’至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 露出， 上述金屬電極的露出面的其中一面係以介電體罩所覆 蓋。 2 1 · —種天線，其特徵係具備： 導體棒，其係使電磁波傳送； 介電體板，其係形成有貫通穴，使傳送於上述導體棒 的電磁波透過而放出至上述處理容器的内部；及 金屬電極，其係經由形成於上述介電體板的貫通穴來 連結至上述導體棒，至少一部份鄰接於上述介電體板的被 處理體側的面的狀態下從上述介電體板的被處理體側的面 露出， 上述金屬電極的露出面係不具有對被處理體大略平行 的面。 22. —種電漿處理裝置的使用方法，其特徵爲： 從電磁波源輸出頻率爲1 G Η z以下的電磁波， -41 - 200911040 使上述電磁波傳送至導體棒’ 使傳送於上述導體棒的電磁波透過至藉由金屬電極來 保持於處理容器的内壁之上述介電體板，而放出至處理容 器的内部，上述金屬電極係經由形成於介電體板的貫通穴 來連結至上述導體棒，至少一部份鄰接於上述介電體板的 被處理體側的面的狀態下從上述介電體板的被處理體側的 面露出， 藉由上述被放出的電磁波來使導入上述處理容器的處 理氣體激發，而對被處理體實施所望的電漿處理。 23.—種電漿處理裝置的洗滌方法，其特徵爲： 從電磁波源輸出頻率爲1 GHz以下的電磁波， 使上述電磁波傳送至導體棒， 使傳送於上述導體棒的電磁波透過至藉由金屬電極來 保持於處理容器的内壁之上述介電體板，而放出至處理容 器的内部’上述金屬電極係經由形成於介電體板的貫通穴 來連結至上述導體棒，至少一部份鄰接於上述介電體板的 被處理體側的面的狀態下從上述介電體板的被處理體側的 面露出， 藉由上述被放出的電磁波來使導入上述處理容器的洗 滌氣體激發，而洗滌電獎處理裝置。 24_如申請專利範圍第5項之電漿處理裝置，其中，上 述金屬電極及介電體罩的露出面係形成大略圓錐形狀。 2 5 .如申請專利範圍第2 4項之電漿處理裝置，其中， 上述介電體罩的前端係形成平面。 -42- 200911040 2 6.如申請專利範圍第25項之電漿處理裝置，其中， 上述介電體罩之與被處理體垂直的方向的高度爲1 〇mm以 内。200911040 X. Patent application scope 1. A plasma processing device is a plasma processing device that processes a gas by ultrasonic waves to excite a gas, and is characterized in that: a processing container; an electromagnetic wave source, which outputs electromagnetic waves a conductor bar that transmits electromagnetic waves output from the electromagnetic wave source; a dielectric plate formed with a through hole for transmitting electromagnetic waves transmitted through the conductor bar to be discharged inside the processing container; and a metal electrode It is connected to the conductor bar via a through hole formed in the dielectric plate, and at least a portion is processed from the dielectric plate in a state in which at least a portion is adjacent to a surface of the dielectric body on the object side of the dielectric body. The surface on the body side is exposed, and one surface of the exposed surface of the metal electrode is covered with a dielectric cover. 2. A plasma processing apparatus, which is a plasma processing apparatus that excites a gas by electromagnetic waves and plasma-treats the object to be processed, and is characterized by: a processing container; an electromagnetic wave source that outputs electromagnetic waves; a conductor bar; And transmitting an electromagnetic wave outputted from the electromagnetic wave source; the dielectric plate is formed with a through hole, and electromagnetic waves transmitted to the conductor bar are transmitted and released to the inside of the processing container; and the metal electrode is formed by The through hole of the dielectric plate is connected to the conductor bar, and at least a portion of the dielectric plate is adjacent to the surface of the surface of the dielectric body on the object side of the dielectric plate. 38-200911040 Exposed, the exposed surface of the metal electrode does not have a surface that is substantially parallel to the object to be processed. 3. The plasma processing apparatus of claim 1, wherein the diameter of the metal electrode is larger than a diameter of the conductor bar. 4. The electric power treatment device according to the first aspect of the invention, wherein the exposed surface of the metal electrode is formed into a substantially conical shape or a substantially hemispherical shape 〇5. Among the exposed surfaces of the metal electrodes, the surfaces substantially parallel to the processing body are covered by the dielectric cover. The plasma processing apparatus of claim 1, wherein the dielectric cover is formed of a porous ceramic. 7. The plasma processing apparatus according to claim 1, wherein the through hole of the dielectric plate is disposed substantially at the center of the dielectric plate. 8. The plasma processing apparatus of claim 1, wherein the surface of the metal electrode is covered with a protective film. 9. The plasma processing apparatus according to claim 1, wherein a gas introduction path of a flowing gas is formed inside the conductor bar, and a gas introduction path formed inside the conductor bar is formed on the metal electrode. The gas flowing through the gas introduction path is introduced into the gas passage inside the processing container. 10. The plasma processing apparatus according to claim 9, wherein the gas passage formed in the metal electrode is formed to introduce a gas in a direction parallel to the object to be processed, approximately -39 - 200911040. The plasma processing apparatus according to claim 9, wherein the gas passage formed in the metal electrode is formed to introduce a gas in a direction substantially perpendicular to the object to be processed. The plasma processing apparatus of claim 9, wherein the gas passage formed in the metal electrode forms a radially introduceable gas. The plasma processing apparatus of claim 9, wherein the gas system is directly introduced into the interior of the processing vessel from the gas passage, and the plasma processing apparatus of claim 9 is applied. The gas system is introduced into the processing container from the gas passage through the dielectric cover. The plasma processing apparatus according to the first aspect of the invention, wherein the plurality of dielectric plates are provided in plurality, and the plurality of metal electrodes are provided in plurality corresponding to the plurality of dielectric plates. The plasma processing apparatus according to claim 15 wherein each of the plurality of dielectric sheets of the plurality of dielectric sheets forms a surface on the side of the object to be processed, and has a rectangular shape. The plasma processing apparatus of claim 16 wherein each of the plurality of dielectric sheets of the plurality of dielectric sheets forms a surface on the side of the object to be processed, which may be substantially square. The plasma processing apparatus according to the first aspect of the invention, wherein the electromagnetic wave source is an electromagnetic wave having an output frequency of 1 GHz or less. The plasma processing apparatus of claim 1, wherein the side surface of the dielectric plate is in contact with the plasma during the process. An antenna comprising: a conductor bar that transmits electromagnetic waves; and a dielectric plate that is formed with a through hole that transmits electromagnetic waves transmitted to the conductor bar and is discharged to the inside of the processing container And a metal electrode 'connected to the surface of the conductor rod' at least partially adjacent to the surface of the body side of the dielectric body via a through hole formed in the dielectric plate, from the dielectric The surface of the body plate on the side of the object to be processed is exposed, and one surface of the exposed surface of the metal electrode is covered with a dielectric cover. An antenna comprising: a conductor bar for transmitting electromagnetic waves; and a dielectric plate having a through hole formed to transmit electromagnetic waves transmitted to the conductor bar and discharged to the inside of the processing container And a metal electrode connected to the conductor bar via a through hole formed in the dielectric plate, and at least a portion is adjacent to a surface of the dielectric body on a side of the object to be processed from the dielectric The surface of the body plate on the side of the object to be processed is exposed, and the exposed surface of the metal electrode does not have a surface that is substantially parallel to the object to be processed. A method of using a plasma processing apparatus, comprising: outputting an electromagnetic wave having a frequency of 1 G Η z or less from an electromagnetic wave source, and -41 - 200911040 transmitting the electromagnetic wave to a conductor bar to transmit electromagnetic waves transmitted to the conductor bar Transmitting to the inside of the processing container by the dielectric plate held by the metal electrode on the inner wall of the processing container, the metal electrode is coupled to the conductor bar via a through hole formed in the dielectric plate, at least When a portion is adjacent to the surface of the dielectric sheet on the side of the object to be processed, it is exposed from the surface of the dielectric sheet on the side of the object to be processed, and is introduced into the processing container by the electromagnetic waves emitted therefrom. The gas is excited, and the desired plasma treatment is performed on the object to be processed. A method of washing a plasma processing apparatus, comprising: outputting an electromagnetic wave having a frequency of 1 GHz or less from an electromagnetic wave source, transmitting the electromagnetic wave to a conductor bar, and transmitting electromagnetic waves transmitted to the conductor bar to a metal electrode Holding the dielectric plate on the inner wall of the processing container and discharging it to the inside of the processing container. The metal electrode is connected to the conductor bar via a through hole formed in the dielectric plate, and at least a portion is adjacent to the above The surface of the dielectric sheet on the side of the object to be processed is exposed from the surface of the dielectric body on the side of the object to be processed, and the electromagnetic wave introduced into the processing container is excited by the electromagnetic wave emitted therefrom to wash the electricity. Award processing device. The plasma processing apparatus of claim 5, wherein the exposed surface of the metal electrode and the dielectric cover is formed into a substantially conical shape. The plasma processing apparatus of claim 24, wherein the front end of the dielectric cover is formed into a flat surface. 6. The plasma processing apparatus according to claim 25, wherein the height of the dielectric cover in a direction perpendicular to the object to be processed is within 1 〇 mm.
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