JPH06232081A - Icp plasma processing device - Google Patents

Abstract

PURPOSE:To provide an ICP plasma processing device which does not contaminate a sample and can cope with a large aperture of a future sample. CONSTITUTION:By applying a high-frequency bias to a sample 1 and introducing electromagnetic waves generated by an antenna 4 to a vacuum container 2 via a dielectric 3, a dielectric 5 with a transmission function of electromagnetic wave is provided between the antenna 4 of a device A' generating plasma for performing plasma processing of the sample 1 and the dielectric 3 is provided in the container and it is electrically connected to the vacuum container 2, thus preventing the sample from being contaminated and coping with the large aperture of a future sample.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ICP plasma processing apparatus, and more particularly to an ICP plasma processing apparatus used in semiconductor manufacturing.

[0002]

2. Description of the Related Art In recent years, in the process of plasma treatment such as etching in the manufacture of semiconductor integrated circuits, the number of elements per unit area is increased and the chip area of the entire integrated circuit is increased to improve the degree of integration. It tends to improve the economical efficiency of the device. As a result, the minimum processing width of the integrated circuit element is becoming smaller year by year, and the diameter of the semiconductor substrate that is simultaneously processed is increasing. Therefore, it is required for the plasma processing apparatus to obtain uniform plasma with a large diameter and high density. Here, ICP (Inductively Coupled), which is one of the plasma processing devices using only electromagnetic induction, is used.
Plasma) Plasma processing equipment can generate plasma using high frequency power and without the need for a fixed magnetic field. For this reason, it is easy to obtain a uniform plasma without magnetizing the plasma, and a high-density large-area plasma (Φ200 mm or more, under a pressure of several mTorr, which could not be achieved until now without a magnetic field).
10 cubic meters per cubic centimeter or more) is obtained. As described above, the ICP plasma processing apparatus has been attracting attention because it can realize a large-area plasma required for manufacturing integrated circuits. Originally, in the initial stage of a plasma processing apparatus using electromagnetic induction, a coil serving as an antenna was wound around a cylindrical quartz tube in a solenoid shape, and plasma was generated by electromagnetic induction. However, since plasma is basically generated near the antenna, when the diameter of the cylinder is increased, it is not possible to ensure the uniformity of the surface distribution in the cross-sectional direction perpendicular to the cylinder axis of the plasma cylinder. Therefore, as the diameter of the processed substrate became larger, it was no longer used. In the ICP plasma processing apparatus, a large area plasma can be obtained by using a plane coil instead of a solenoid coil, and thus it has been regained attention in recent years. FIG. 5 is a schematic diagram showing a schematic configuration in an example of such a conventional ICP plasma processing apparatus A. As shown in FIG. 5, the conventional ICP
The plasma processing apparatus A includes a conductive vacuum container 2 made of metal or the like for accommodating a sample 1 such as a processed substrate, and a dielectric 3 such as a quartz window which constitutes a part of the vacuum container 2 and introduces electromagnetic waves into the container.
And the antenna 4 and the like which are provided outside the dielectric 3 and generate electromagnetic waves by flowing a high frequency current.
While applying a high frequency bias to the inside of the vacuum vessel 2, the electromagnetic wave generated by the antenna 4 is introduced into the vacuum vessel 2 through the dielectric 3 to generate plasma for plasma-treating the sample 1. .

The mechanism of plasma generation by the conventional apparatus A will be described below. The mechanism of plasma generation is basically the same as that of a conventional plasma processing apparatus using electromagnetic induction.
First, match box 4 from the antenna for high-frequency power supply 4 _a
An electromagnetic wave induced by passing a high-frequency current through the antenna 4 via _b is transmitted to the inside of the vacuum container 2 through the dielectric 3, and a high-frequency electric field is induced inside this container. The high-frequency electric field accelerates the electrons generated inside the vacuum container 2 by natural radiation or the like. The kinetic energy of the electron obtained by the acceleration is given to the neutral atom when the electron collides with the neutral atom contained in the processing gas supplied from the outside, and the neutral atom is ionized to form the ion and the electron. To generate. The newly generated electrons are accelerated by the high frequency electric field. These processes are repeated to generate and maintain plasma. Next, when the plasma density rises to some extent, the electron density in the plasma rises and the response frequency of the electrons in the plasma rises. For this reason, the plasma acts as if it were a conductor, and a current flows so as to block the high-frequency electric field, thus starting to block the electromagnetic waves. At this time, since electromagnetic waves do not enter inside the plasma except for a special mode (frequency) peculiar to the plasma, only the plasma on the surface obtains energy of the electromagnetic waves radiated by the antenna 4 to further increase the plasma density and to the inside of the plasma. Spread. Therefore, although the plasma density is high near the antenna 4, the plasma density tends to decrease as the distance from the antenna 4 increases. Therefore, the sample 1 to be processed cannot be separated from the plasma generation position so much. As a result, when the diameter of the sample 1 becomes large, a flat plasma is generated while maintaining a constant gap from the plasma to the sample 1. When irradiating the sample 1 with the ions in the flat plasma generated in this way to perform etching, for example, it is difficult to make the ions enter the sample 1 at an ideal angle. For this,
Electrode 1 on which sample 1 is placed and electrically insulated from vacuum container 2
_a , high frequency bias power supply _1b to match box 1
_A high frequency bias is applied to sample 1 by passing a high frequency current through _c . As a result, ions were attracted to the sample 1 to perform processing, and a certain processing performance was secured with respect to the etching shape and the like.

[0004]

The above-mentioned conventional ICP plasma processing apparatus A can obtain a uniform plasma to the extent that the sample 1 having a diameter of up to 8 inches is currently processed, but has the following problems. (1) During processing, a high-frequency potential is generated in one type of antenna circuit formed between the antenna 4 and the plasma, and this negative potential is generated in the plasma because the potential is negative with respect to the plasma potential. Ions are attracted to collide with the dielectric 3 that seals the vacuum, and the dielectric 3 is sputtered. Then, the dielectric 3 may be decomposed and impurities may be mixed into the plasma. (2) Further, the high frequency current for bias application flows from the electrode 1 _a on which the sample 1 is placed, through the sample 1 and the plasma to the side 3 _a facing the sample 1. Therefore, the high frequency current for bias application differs depending on the boundary condition of the inner surface of the facing side 3 _a . In a flat plasma, the boundary condition of the inner surface on the opposite side 3 _a is that the peripheral portion 3 _a ′ is a conductive vacuum container 2 such as metal, while the central portion 3 _a ″ is a dielectric for introducing electromagnetic waves. Since it is 3 (insulator), there is a difference between the high frequency current for bias application flowing in the central part of the plasma and the high frequency current for bias application flowing in the peripheral part. In some cases, the acceleration potential of the generated ions may be different to reduce the uniformity of the treatment.This tendency to decrease the uniformity of the treatment increases as the plasma becomes flatter, so the diameter of future sample 1 will be increased. The present invention improves the ICP plasma processing apparatus in order to solve the problems in the related art, and there is no fear of contaminating the sample, and further, in the future. It is an object to provide a corresponding possible ICP plasma processing apparatus to larger diameter of the fee.

[0005]

In order to achieve the above object, the first invention is a conductive vacuum container for containing a sample,
The antenna includes: a dielectric which constitutes a part of the vacuum container and introduces an electromagnetic wave into the container; and an antenna which is disposed outside the dielectric and generates the electromagnetic wave by flowing a high-frequency current. In the ICP plasma processing apparatus, which introduces the electromagnetic wave generated by the above into the vacuum container through the dielectric to generate plasma for plasma-processing the sample in the container, in the ICP plasma processing apparatus, between the antenna and the dielectric. In addition, a conductor having a function of transmitting electromagnetic waves is provided, and the conductor is electrically connected to the vacuum container, which is an ICP plasma processing apparatus. A second invention is a conductive vacuum container for accommodating a sample, a dielectric which constitutes a part of the vacuum container and introduces electromagnetic waves into the container, and a high-frequency wave which is disposed outside the dielectric. An antenna for generating the electromagnetic wave by passing an electric current through the container. By applying a high frequency bias to the sample, the electromagnetic wave generated by the antenna is introduced into the vacuum container through the dielectric. In an ICP plasma processing apparatus for generating plasma for plasma-processing the sample therein, a conductor having a function of transmitting electromagnetic waves is provided between the antenna and the plasma, and the conductor is electrically connected to the vacuum container. It is configured as an ICP plasma processing apparatus, which is characterized in that the ICP plasma processing apparatuses are electrically connected. Further, a conductive vacuum container for containing the sample, a dielectric that constitutes a part of the vacuum container and introduces electromagnetic waves into the container, and a high-frequency current that is provided outside the dielectric and flows a high-frequency current. And an antenna for generating the electromagnetic wave according to claim 1, wherein the electromagnetic wave generated by the antenna is introduced into the vacuum container through the dielectric material while applying a high frequency bias to the sample. I for generating plasma
In the CP plasma processing apparatus, a first conductor having an electromagnetic wave transmitting function is provided between the antenna and the dielectric, and an electromagnetic wave transmitting function is provided between the antenna and the plasma. The ICP plasma processing apparatus is characterized in that two electric conductors are provided and the first and second electric conductors are electrically connected to the vacuum container.
Further, in the ICP plasma processing apparatus, the first conductor also serves as the second conductor. Further, in the ICP plasma processing apparatus, the electromagnetic wave transmitting function of the conductor is achieved by forming an appropriate number of slits in the conductor at right angles to the high frequency current flowing in the antenna.
Furthermore, in the IPC plasma processing apparatus, the electromagnetic wave transmission function of the conductor is achieved by reducing the thickness of the conductor.

[0006]

According to the first aspect of the invention, by introducing an electromagnetic wave generated by flowing a high-frequency current through the antenna into the conductive vacuum container through the dielectric, a plasma for plasma-treating the sample in the container is generated. generate. At this time, a negative potential with respect to the plasma potential is generated in the antenna circuit formed between the antenna and the plasma due to the high frequency potential, and the negative potential is an electromagnetic wave between the antenna and the dielectric. It is extinguished by providing an electric conductor having a transparent function and electrically connecting the electric conductor to the vacuum container. The negative potential attracts the ions in the plasma and causes them to collide with the dielectric, and the disappearance thereof causes the dielectric to be sputtered and decomposed, so that impurities are not mixed in the plasma. Therefore, there is no possibility of contaminating the sample to be plasma-treated. According to the second invention,
While applying a high-frequency bias to the sample, an electromagnetic wave generated by flowing a high-frequency current through the antenna is introduced into the conductive vacuum container through the dielectric to generate plasma for plasma-processing the sample in the container. . At this time, the high-frequency current for applying the high-frequency bypass flows through the plasma to the side facing the sample. The high-frequency current is provided between the antenna and the plasma by providing a conductor having an electromagnetic wave transmitting function, Further, by electrically connecting the electric conductor to the vacuum container, the electric current flows uniformly. Therefore, the acceleration potential of the ions generated by the high frequency for bias application in the plasma becomes uniform, and the uniformity of processing is ensured, and it is possible to cope with future larger sample diameters. Furthermore, the first
By using the conductor of the present invention also as the conductor of the second invention, the device can be made compact as compared with the case where the conductor is separately provided. Further, the electromagnetic wave transmitting function of the dielectric is achieved by forming an appropriate number of slits in the conductor in a direction perpendicular to the high frequency current flowing in the antenna, or by thinning the conductor. Thus, the conductor can be embodied by a relatively simple method. As a result, there is no risk of contaminating the sample, and it is possible to cope with future large diameters of the sample.
A P plasma processing apparatus can be obtained.

[0007]

Embodiments of the present invention will be described below with reference to the accompanying drawings for the understanding of the present invention. The following embodiments are examples of embodying the present invention and are not of the nature to limit the technical scope of the present invention. here,
1 is a schematic diagram showing a schematic configuration of an ICP plasma processing apparatus A'according to an embodiment of the present invention, FIG. 2 is an explanatory diagram showing an example of a planar structure of an antenna, and FIG. 3 is an explanation showing an example of a planar structure of a conductor. FIGS. 4A, 4B and 4 are explanatory views showing a modified example of the attached state of the conductors. In addition, FIG.
The same reference numerals are used for the elements common to the schematic diagram showing the schematic configuration in the example of the conventional ICP plasma processing apparatus A shown in FIG. As shown in FIG. 1, an ICP plasma processing apparatus A'according to an embodiment of the present invention (first and second inventions) is a conductive vacuum container 2 made of metal or the like for accommodating a sample 1 such as a processing substrate, A dielectric 3 such as a quartz window which constitutes a part of the vacuum container 2 and introduces an electromagnetic wave into the container, and an antenna 4 which is provided outside the dielectric 3 and generates an electromagnetic wave by flowing a high frequency current The sample 1 is configured to generate a plasma for plasma-treating the sample 1 by introducing an electromagnetic wave generated by the antenna 4 into the vacuum container 2 through the dielectric 3 while applying a high frequency bias to the sample 1. This is similar to the conventional example in that it is performed. The high-frequency current flowing through the antenna 4 is supplied from the antenna high-frequency power source 4 _a through the match box 4 _b, and the high-frequency bias high-frequency current applied to the sample 1 is electrically connected to the vacuum container 2 when the sample 1 is placed on the sample container 1. This is also the same as the conventional example in that it is supplied from the bias high-frequency power source 1 _b to the insulated electrode 1 _a through the match box 1 _c . However, the first invention is different from the conventional example in that the conductor 5 having the electromagnetic wave transmitting function is provided between the antenna 4 and the dielectric 3 and the conductor 5 is electrically connected to the vacuum container 2. different. Further, in the second invention, a dielectric 5'having a function of transmitting an electromagnetic wave is provided between the antenna 4 and the plasma, and the conductor 5'is electrically connected to the vacuum container 3, which is different from the conventional example. different. 1 shows the case where the conductor 5 according to the first invention also serves as the conductor 5'according to the second invention for convenience of description, but both conductors 5 and 5'may be provided separately. Good. In that case, the conductor 5 '
Is installed inside the vacuum container 2.

In this embodiment, the parts different from the conventional example will be mainly described below, and the parts similar to the conventional example are as described above, and therefore detailed description thereof will be omitted. First, the basic principle of this device A'will be briefly described. Electromagnetic waves
Generally, in an insulator (in vacuum, in the atmosphere, in a dielectric, etc.), orthogonal electric fields and magnetic fields repeatedly alternate in time and propagate in space. On the other hand, since many free electrons exist in the conductor, the free electrons receive a force due to the potential difference of the induced electric field and move, and a current flows so as to cancel the electric field. Therefore, the electromagnetic wave is reflected without being propagated in the conductor. Therefore, for example, a mere conductor is placed between the antenna 4 and the plasma in order to eliminate the negative potential generated with respect to the plasma potential, which is generated in the antenna 4 portion which has been a problem in the above-mentioned conventional example, and this conductor is When connected to the same potential (ground potential) as the vacuum container 2, the problem cannot be solved because electromagnetic waves do not propagate. However, when the direction of the electric field induced by the electromagnetic wave (radio wave) is fixed, even a conductor cuts off only the current in the direction of canceling the induced electric field and does not block the electromagnetic wave (radio wave). It is known that electromagnetic waves can be propagated. Such a conductor is known as a Faraday shield. That is,
Electromagnetic waves in the vicinity of the antenna 4 generate a crossing magnetic field in a direction perpendicular to the high-frequency current flowing in the antenna 4, and further generate a crossing electric field in a direction perpendicular to this crossing magnetic field. An electric current in a direction parallel to the electric current flowing in 4 has a function of blocking electromagnetic waves. Therefore, by stopping the flow of the electric current in this direction, it is possible to transmit the electromagnetic wave even by the conductor without interrupting the electric current that cancels the generated cross-field. It is also well known that electromagnetic waves can be transmitted by making the conductor very thin. The conductor 5 in this device A'is an application of these basic principles.
That is, the conductor 5 is provided with a slit in a direction perpendicular to the direction in which it flows in the antenna 4 to block the current that interrupts the current in the antenna 4, or to thin the conductor 5 to provide an electromagnetic wave transmission function.

In the first invention, such a conductor 5 is
By installing the antenna 4 between the antenna 4 and the dielectric 3 and connecting it to the same potential (ground potential) as the vacuum container 2, the negative potential generated in the antenna 4 with respect to the plasma potential disappears. As described above, this negative potential attracts ions in the plasma and causes them to collide with the dielectric 3, and the disappearance of the dielectric 3 causes the dielectric 3 to be sputtered and decomposed, so that impurities are not mixed into the plasma. Therefore,
It is possible to eliminate the risk of contaminating the sample 1 to be plasma-treated. In the second invention, the conductor 5 is used as the sample 1
By arranging them in parallel with respect to each other, the distance between the electrode 1 _a on which the sample 1 is mounted and the conductor 5 is made uniform, and the high frequency current for bias application flowing in the plasma during normal processing is made uniform. As a result, the bias potential applied to the sample 1 can be made uniform and the uniformity of processing can be improved. Subsequently, the operation of the device A'will be described with reference to FIGS. First, a high frequency for plasma generation is introduced through a quartz window (derivative 3) using a spiral antenna 4 as shown in FIG. 2 to generate plasma. Since a large current flows through the antenna 4, a copper pipe with an outer diameter of φ6 mm was used, and cooling water was passed through the center to cool it. The outer diameter of the antenna 4 is φ150 mm and the inner diameter is φ40 mm so as to draw a vortex of three revolutions. As described above, the outermost part of the antenna 4 is connected so as to have the same potential as the vacuum container 2. The vacuum container 2 itself is also connected to the ground potential. The high frequency used for plasma generation has a frequency of 13.56 MHz.
Use of a high-frequency power source 4 _a antenna capable of introducing power up to 1.2 kW. The electrode 1 _{a on} which the sample 1 can be placed is electrically insulated from the vacuum container 2 as described above, and is connected to the bias high frequency power source 1 _b so that a bias high frequency different from that for plasma generation can be applied. It is connected. The frequency of the high frequency for bias application was 100 kHz. The maximum electric power is 2 kV depending on the process.
The bias potential of 1 can be applied to the sample 1. As shown in FIG. 3 (a), the conductor 5 is provided with a stainless steel plate made of SUS304 having a thickness of 0.5 mm and provided with a number of slits having a width of 0.5 mm and a length of 3 cm to have the same potential (ground potential) as the vacuum container 2. Connected Since the direction of the slit is perpendicular to the direction of the current flowing through the antenna 4, it depends on the shape of the antenna 4, and it is necessary to change the direction of the slit when the antenna 4 is deformed. For example, when a radial antenna is used, it is necessary to set the slit direction as shown in FIG.

In the first aspect of the invention, the conductor 5 must be placed outside the vacuum container 2 in order to prevent the conductor 5 from spattering. On the other hand, in the second invention, the conductor 5 may be placed outside the vacuum container 2 or inside the vacuum container 2 for the purpose of making the bias current uniform. When placed outside the vacuum container 2, the dielectric 3 intervenes, so that the uniformity of the high-frequency current for bias application is somewhat reduced, but in this case it can be used also as the conductor in the first invention, so it is provided separately. The device can be made more compact than in the case of the above. Since the conductor 5 is heated because a part of the high frequency current for plasma generation and the high frequency current for bias application flows, it is cooled by air cooling when it is grounded to the atmosphere side. Here, chlorine gas 100%, 1 mTorr, high frequency (13.56 MHz) power 600 W for plasma generation,
The experimental results on the uniformity of the etching rate when the polysilicon is etched under the condition of bias application high frequency (100 kHz) 50 W, (bias potential −150 V) are shown below. (1) without conductor 5; variation in etching rate 7% (etching rate 350 nm / min) (2) with conductor 5; variation in etching rate 5% (etching rate 300 nm / min) (conductor 5 is vacuum container 2 (3) With conductor 5; variation in etching rate 3% (etching rate 300 nm / min) (conductor 5 is installed inside vacuum vessel 2) Also, when an aluminum plate is etched under the same conditions Although the conductor 5 was not used, etching could not be performed due to the mixing of oxygen atoms. However, by setting the conductor 5 outside the vacuum container 2, etching could be performed. Variation in etching rate at this time is 5% (etching rate 400 nm / min)
Met. When the conductor 5 is provided in this way, the variation in etching rate is relatively small, and the etching shape can be improved. This means that it is possible to sufficiently cope with the future increase in the diameter of Sample 1. Also,
In the same experiment, a sputter trace of the same shape as the antenna 4 was observed on the dielectric 3 without the conductor 5, but it was confirmed that spatter disappeared when the conductor 5 was installed outside the vacuum container 2. did it. As described above, according to the present invention, it is possible to obtain an ICP plasma processing apparatus which is free from the possibility of contaminating the sample 1 to be plasma-processed and which can cope with the future increase in the diameter of the sample 1. In the above embodiment, the conductor 5 is simply installed between the dielectric 3 and the antenna 4, but in actual use, as shown in FIGS. 5 may be bonded together. In that case, the conductor 5 can mechanically reinforce the dielectric 3. Although the conductor 5 is electrically connected to the grounded vacuum container 2 in the above embodiment, the conductor 5 may be directly grounded in actual use without any problem.

[0011]

Since the first aspect of the present invention is configured as described above, it is possible to eliminate the negative potential generated in the antenna portion due to plasma electrification. Since this negative potential attracts the ions in the plasma and causes them to collide with the dielectric, the disappearance thereof causes the dielectric to be sputtered and decomposed, and there is no possibility that impurities are mixed into the plasma. Therefore, there is no possibility of contaminating the sample to be plasma-treated. Moreover, since the second invention is configured as described above, the acceleration potential of the ions in the plasma becomes uniform, and the uniformity of processing is ensured. Therefore, it becomes possible to cope with the future increase in the diameter of the sample. Furthermore, by using the dielectrics in the first and second inventions in common, the device can be made more compact than in the case where they are provided separately. Furthermore, since the electromagnetic wave transmitting function of the dielectric can be achieved by forming a slit in the dielectric or thinning the dielectric, the dielectric can be realized by a relatively simple method. As a result, it is possible to obtain an ICP plasma processing apparatus which is free from the possibility of contaminating the sample to be plasma-processed and which can cope with future increase in the diameter of the sample.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a schematic configuration of an ICP plasma processing apparatus A ′ according to an embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a planar structure example of an antenna.

FIG. 3 is an explanatory diagram (a) showing an example of a planar structure of a conductor,
(B).

FIG. 4 is an explanatory view (a), (b) showing a modified example of a mounting state of a conductor.

FIG. 5 is a schematic diagram showing a schematic configuration of an example of a conventional ICP plasma processing apparatus A.

[Explanation of symbols]

 A '... ICP plasma processing apparatus 1 ... Sample 2 ... Vacuum container 3 ... Dielectric 4 ... Antenna 5 ... Conductor

Claims (6)

[Claims] 1. A conductive vacuum container for accommodating a sample, a dielectric that constitutes a part of the vacuum container and introduces electromagnetic waves into the container, and a high-frequency current that is disposed outside the dielectric. An antenna for generating the electromagnetic wave by flowing the electromagnetic wave is provided, and the electromagnetic wave generated by the antenna is introduced into the vacuum container through the dielectric to generate plasma for plasma-processing the sample in the container. In the ICP plasma processing apparatus, a conductor having an electromagnetic wave transmitting function is provided between the antenna and the dielectric, and the conductor is electrically connected to the vacuum container. ICP plasma processing apparatus. 2. A conductive vacuum container for accommodating a sample, a dielectric member that constitutes a part of the vacuum container and introduces electromagnetic waves into the container, and a high-frequency current that is disposed outside the dielectric member. An antenna for generating the electromagnetic wave by flowing the electromagnetic wave is provided, and the electromagnetic wave generated by the antenna is introduced into the vacuum container through the dielectric while applying a high frequency bias to the sample. In an ICP plasma processing apparatus for generating plasma for plasma-processing the sample, a conductor having an electromagnetic wave transmission function is provided between the antenna and the plasma, and the conductor is electrically connected to the vacuum container. An ICP plasma processing apparatus characterized by being connected. 3. A conductive vacuum container for accommodating a sample, a dielectric member which constitutes a part of the vacuum container and introduces electromagnetic waves into the container, and a high-frequency current which is disposed outside the dielectric member. An antenna for generating the electromagnetic wave by flowing the electromagnetic wave is provided, and the electromagnetic wave generated by the antenna is introduced into the vacuum container through the dielectric while applying a high frequency bias to the sample. In an ICP plasma processing apparatus for generating plasma for plasma-processing the sample, a first conductor having an electromagnetic wave transmitting function is provided between the antenna and the dielectric, and the antenna and the plasma are connected to each other. A second conductor having a function of transmitting electromagnetic waves is provided between the first and second conductors.
An ICP plasma processing apparatus, characterized in that the conductor of (1) is electrically connected to the vacuum container. 4. The ICP plasma processing apparatus according to claim 3, wherein the first conductor also serves as the second conductor. 5. The electromagnetic wave transmitting function of the conductor is achieved by forming an appropriate number of slits in the conductor in a direction perpendicular to a high frequency current flowing in the antenna. ICP plasma processing device. 6. The electromagnetic wave transmission function of the conductor is achieved by thinning the conductor.
The IPC plasma processing apparatus according to 2, 3, or 4.