SG10201702287RA - Plasma Processing Method - Google Patents
Plasma Processing MethodInfo
- Publication number
- SG10201702287RA SG10201702287RA SG10201702287RA SG10201702287RA SG10201702287RA SG 10201702287R A SG10201702287R A SG 10201702287RA SG 10201702287R A SG10201702287R A SG 10201702287RA SG 10201702287R A SG10201702287R A SG 10201702287RA SG 10201702287R A SG10201702287R A SG 10201702287RA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- plasma processing
- plasma
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016057010A JP6541596B2 (en) | 2016-03-22 | 2016-03-22 | Plasma treatment method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201702287RA true SG10201702287RA (en) | 2017-10-30 |
Family
ID=59899045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201702287RA SG10201702287RA (en) | 2016-03-22 | 2017-03-21 | Plasma Processing Method |
Country Status (6)
Country | Link |
---|---|
US (2) | US9960016B2 (en) |
JP (1) | JP6541596B2 (en) |
KR (1) | KR102223327B1 (en) |
CN (1) | CN107221486B (en) |
SG (1) | SG10201702287RA (en) |
TW (1) | TWI718272B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019186098A (en) * | 2018-04-12 | 2019-10-24 | 東京エレクトロン株式会社 | Method of generating plasma |
CN113272939B (en) * | 2019-12-17 | 2023-11-14 | 株式会社日立高新技术 | Plasma processing apparatus and method of operating the same |
JP2023019285A (en) | 2021-07-29 | 2023-02-09 | 三井・ケマーズ フロロプロダクツ株式会社 | Fluorine-based solvent composition |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030000471A1 (en) * | 2001-06-18 | 2003-01-02 | Soo-Sik Yoon | Method and apparatus for manufacturing semiconductor devices |
JP4763235B2 (en) * | 2001-08-29 | 2011-08-31 | 東京エレクトロン株式会社 | Apparatus and method for plasma processing |
US20070066038A1 (en) * | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
JP2008118017A (en) * | 2006-11-07 | 2008-05-22 | Hitachi High-Technologies Corp | Method of plasma treatment and treatment apparatus |
CN102446739B (en) * | 2008-03-21 | 2016-01-20 | 应用材料公司 | The method and apparatus of substrate etching system and processing procedure |
US20130048082A1 (en) * | 2011-08-22 | 2013-02-28 | Mirzafer Abatchev | System, method and apparatus for real time control of rapid alternating processes (rap) |
JP5847496B2 (en) * | 2011-09-01 | 2016-01-20 | 株式会社日立国際電気 | Plasma generation power supply apparatus and plasma generation parameter setting method |
US9772629B2 (en) * | 2011-09-29 | 2017-09-26 | Applied Materials, Inc. | Methods for monitoring a flow controller coupled to a process chamber |
JP5935116B2 (en) * | 2011-12-16 | 2016-06-15 | 東京エレクトロン株式会社 | Plasma processing equipment |
KR102168064B1 (en) * | 2013-02-20 | 2020-10-20 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and plasma processing method |
TWI593015B (en) * | 2014-07-10 | 2017-07-21 | 東京威力科創股份有限公司 | Methods for high precision etching of substrates |
JP6316735B2 (en) * | 2014-12-04 | 2018-04-25 | 東京エレクトロン株式会社 | Plasma etching method |
-
2016
- 2016-03-22 JP JP2016057010A patent/JP6541596B2/en active Active
-
2017
- 2017-03-16 TW TW106108645A patent/TWI718272B/en active
- 2017-03-21 US US15/464,503 patent/US9960016B2/en active Active
- 2017-03-21 KR KR1020170035263A patent/KR102223327B1/en active IP Right Grant
- 2017-03-21 SG SG10201702287RA patent/SG10201702287RA/en unknown
- 2017-03-22 CN CN201710173345.0A patent/CN107221486B/en active Active
-
2018
- 2018-03-28 US US15/938,006 patent/US10269539B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN107221486A (en) | 2017-09-29 |
CN107221486B (en) | 2019-05-07 |
JP2017174890A (en) | 2017-09-28 |
US9960016B2 (en) | 2018-05-01 |
TW201737393A (en) | 2017-10-16 |
KR102223327B1 (en) | 2021-03-05 |
US20180218882A1 (en) | 2018-08-02 |
US10269539B2 (en) | 2019-04-23 |
JP6541596B2 (en) | 2019-07-10 |
KR20170110035A (en) | 2017-10-10 |
TWI718272B (en) | 2021-02-11 |
US20170278675A1 (en) | 2017-09-28 |
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