JP2016530706A - Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 - Google Patents
Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 Download PDFInfo
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- 238000012545 processing Methods 0.000 title description 52
- 230000007547 defect Effects 0.000 title description 13
- 238000013461 design Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 27
- 239000007789 gas Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 16
- 150000003254 radicals Chemical class 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
本明細書内の実施形態は、概して、プラズマ処理チャンバ内で使用するための単一リングプロセスキットに関する。
様々な半導体製造プロセス(とりわけ、プラズマ援用エッチング、物理蒸着、及び化学蒸着など)は、半導体ワークピースが処理中に(カバーリングとしても知られる)誘電体カラーと内部で係合されるプラズマ処理チャンバ内で実行される。例えば、ワークピース(例えば、半導体基板)をエッチングするために構成されたプラズマ処理チャンバ内で、基板は、処理チャンバ内の基板支持台上に取り付けられる。基板支持台は、処理チャンバに供給される処理ガスの混合物から形成されたプラズマを維持するためにRFバイアスを印加することができる金属電極を含む。処理チャンバ内の圧力は、チャンバからのエッチング副生成物もまた除去するポンプによって維持される。RF電源は、基板支持台内部の電極に結合され、これによってプラズマに対して負のバイアス電圧を電極上に生成する。バイアス電圧は、ワークピースに衝突するイオンを引き付け、これによって所望の製造プロセスを促進する。電極が負にバイアスされているので、基板支持台は、多くの場合、カソードと呼ばれる。
Claims (14)
- 単一リングであって、
円形リング状本体であって、
本体の中心線に近接して最も近い内面と、
内面と反対側の外面と、
内部に形成されたスロットを有する底面と、
外側端部及び内側端部を有する上面であって、外側端部は外面に隣接し、内側端部は中心線に向かって内面の段差まで下って延びる斜面に隣接する上面と、
段差の下の垂直面からリングの中心線に向かって延出する内面上に配置されたリップであって、リップは、上で基板を支持するように構成され、本体は、基板と段差の垂直面の間のリップ上に約2mm未満のギャップを画定するような大きさに作られたリップを含む円形リング状本体を含む単一リング。 - リップ及び内面は、直径300mmの基板を支持するように構成されている、請求項1記載の単一リング。
- ギャップは約0.9mmである、請求項2記載の単一リング。
- 外面は約15.12インチの直径を有する、請求項2記載の単一リング。
- 垂直面は、約11.884インチ〜約11.889インチの直径を有する円筒を形成する、請求項2記載の単一リング。
- リップ及び内面は、直径200mmの基板又は直径450mmの基板を支持するように構成されている、請求項1記載の単一リング。
- 傾斜は約80°である、請求項1記載の単一リング。
- スロットは、底面を内側底面と外側底面に分割する円形溝であり、内側底面及び外側底面は、同一平面上にはない、請求項1記載の単一リング。
- 垂直壁の高さは約0.054インチである、請求項2記載の単一リング。
- リップは、約11.736インチ〜約11.741インチの内径を有する、請求項9記載の単一リング。
- 本体は、セラミックス材料から製造される、請求項1記載の単一リング。
- セラミックス材料はY2O3である、請求項11記載の単一リング。
- リップから上面までの距離は約0.14インチである、請求項1記載の単一リング。
- 本体はY2O3から製造され、ギャップは約0.9mmであり、外面は約15.12インチの直径を有し、垂直面は、約11.884インチ〜約11.889インチの直径を有する円筒を形成し、傾斜は約80度であり、スロットは、底面を内側底面と外側底面に分割する円形溝であり、内側底面及び外側底面は、同一平面上にはなく、垂直壁の高さは約0.054インチであり、リップは約11.736インチ〜約11.741インチの内径を有し、リップから上面までの距離は約0.14インチである、請求項1記載の単一リング。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361839823P | 2013-06-26 | 2013-06-26 | |
US61/839,823 | 2013-06-26 | ||
PCT/US2014/036213 WO2014209492A1 (en) | 2013-06-26 | 2014-04-30 | Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber |
Related Child Applications (1)
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JP2020213400A Division JP2021068909A (ja) | 2013-06-26 | 2020-12-23 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
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JP2016530706A true JP2016530706A (ja) | 2016-09-29 |
JP2016530706A5 JP2016530706A5 (ja) | 2017-06-08 |
JP6853038B2 JP6853038B2 (ja) | 2021-03-31 |
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JP2016523737A Active JP6853038B2 (ja) | 2013-06-26 | 2014-04-30 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
JP2020213400A Pending JP2021068909A (ja) | 2013-06-26 | 2020-12-23 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
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JP2020213400A Pending JP2021068909A (ja) | 2013-06-26 | 2020-12-23 | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
Country Status (6)
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US (1) | US20160099162A1 (ja) |
JP (2) | JP6853038B2 (ja) |
KR (1) | KR102253990B1 (ja) |
CN (2) | CN105074869A (ja) |
TW (1) | TWM492915U (ja) |
WO (1) | WO2014209492A1 (ja) |
Cited By (1)
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JP2021170663A (ja) * | 2017-07-24 | 2021-10-28 | ラム リサーチ コーポレーションLam Research Corporation | 可動エッジリング設計 |
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US9633862B2 (en) * | 2015-08-31 | 2017-04-25 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
CN117174641A (zh) * | 2017-04-07 | 2023-12-05 | 应用材料公司 | 在基板边缘上的等离子体密度控制 |
KR102191611B1 (ko) * | 2017-09-13 | 2020-12-15 | 주식회사 엘지화학 | 패턴화 기판의 제조 방법 |
CN108063110B (zh) * | 2018-01-10 | 2023-11-24 | 池州海琳服装有限公司 | 一种硅片浮动支撑机构 |
CN108269753B (zh) * | 2018-01-10 | 2023-12-05 | 池州海琳服装有限公司 | 一种硅片单面清洗机 |
SG11202103648WA (en) * | 2018-10-18 | 2021-05-28 | Lam Res Corp | Lower plasma exclusion zone ring for bevel etcher |
WO2020257095A1 (en) * | 2019-06-18 | 2020-12-24 | Lam Research Corporation | Reduced diameter carrier ring hardware for substrate processing systems |
KR20220038172A (ko) * | 2019-08-05 | 2022-03-25 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들을 위한 에지 링 시스템들 |
US20220282371A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Electrostatic chuck with metal shaft |
TWM639962U (zh) * | 2021-12-03 | 2023-04-21 | 美商蘭姆研究公司 | 基板處理系統中用於增進屏蔽的寬覆蓋邊緣環及邊緣環系統 |
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2014
- 2014-04-30 CN CN201480018535.XA patent/CN105074869A/zh active Pending
- 2014-04-30 KR KR1020157031577A patent/KR102253990B1/ko active IP Right Grant
- 2014-04-30 WO PCT/US2014/036213 patent/WO2014209492A1/en active Application Filing
- 2014-04-30 JP JP2016523737A patent/JP6853038B2/ja active Active
- 2014-04-30 CN CN202010081458.XA patent/CN111180305A/zh active Pending
- 2014-04-30 US US14/765,872 patent/US20160099162A1/en active Pending
- 2014-05-07 TW TW103207940U patent/TWM492915U/zh unknown
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2020
- 2020-12-23 JP JP2020213400A patent/JP2021068909A/ja active Pending
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Also Published As
Publication number | Publication date |
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KR102253990B1 (ko) | 2021-05-18 |
US20160099162A1 (en) | 2016-04-07 |
KR20160023646A (ko) | 2016-03-03 |
JP6853038B2 (ja) | 2021-03-31 |
WO2014209492A1 (en) | 2014-12-31 |
JP2021068909A (ja) | 2021-04-30 |
CN111180305A (zh) | 2020-05-19 |
TWM492915U (zh) | 2015-01-01 |
CN105074869A (zh) | 2015-11-18 |
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