SG11202103648WA - Lower plasma exclusion zone ring for bevel etcher - Google Patents
Lower plasma exclusion zone ring for bevel etcherInfo
- Publication number
- SG11202103648WA SG11202103648WA SG11202103648WA SG11202103648WA SG11202103648WA SG 11202103648W A SG11202103648W A SG 11202103648WA SG 11202103648W A SG11202103648W A SG 11202103648WA SG 11202103648W A SG11202103648W A SG 11202103648WA SG 11202103648W A SG11202103648W A SG 11202103648WA
- Authority
- SG
- Singapore
- Prior art keywords
- exclusion zone
- lower plasma
- zone ring
- bevel etcher
- plasma exclusion
- Prior art date
Links
- 230000007717 exclusion Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862747226P | 2018-10-18 | 2018-10-18 | |
PCT/US2019/056472 WO2020081644A1 (en) | 2018-10-18 | 2019-10-16 | Lower plasma exclusion zone ring for bevel etcher |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202103648WA true SG11202103648WA (en) | 2021-05-28 |
Family
ID=70283276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202103648WA SG11202103648WA (en) | 2018-10-18 | 2019-10-16 | Lower plasma exclusion zone ring for bevel etcher |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210351018A1 (en) |
JP (1) | JP7539873B2 (en) |
KR (1) | KR20210062094A (en) |
CN (1) | CN112913000A (en) |
SG (1) | SG11202103648WA (en) |
TW (1) | TWI848010B (en) |
WO (1) | WO2020081644A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102695443B1 (en) * | 2019-08-27 | 2024-08-16 | 삼성전자주식회사 | apparatus for etching bevel of substrate edge and manufacturing method of semiconductor device using |
KR102327270B1 (en) * | 2020-12-03 | 2021-11-17 | 피에스케이 주식회사 | Support unit, apparatus for treating a substrate and method for treating a substrate |
TWI787958B (en) * | 2021-08-18 | 2022-12-21 | 南韓商Psk有限公司 | Substrate processing apparatus and substrate processing method |
US20230369023A1 (en) * | 2022-05-12 | 2023-11-16 | Taiwan Semiconductor Manufacturing Company Limited | Tunable plasma exclusion zone in semiconductor fabrication |
WO2024137297A1 (en) * | 2022-12-20 | 2024-06-27 | Lam Research Corporation | Lower plasma exclusion zone ring for controlling plasma deposition or etching near a substrate notch |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
JP4209618B2 (en) * | 2002-02-05 | 2009-01-14 | 東京エレクトロン株式会社 | Plasma processing apparatus and ring member |
US7882800B2 (en) * | 2001-12-13 | 2011-02-08 | Tokyo Electron Limited | Ring mechanism, and plasma processing device using the ring mechanism |
US7943007B2 (en) * | 2007-01-26 | 2011-05-17 | Lam Research Corporation | Configurable bevel etcher |
KR20090044571A (en) * | 2007-10-31 | 2009-05-07 | 주식회사 하이닉스반도체 | Apparatus for manufacturing semiconductor device and method using the same |
JP5111620B2 (en) * | 2008-01-24 | 2013-01-09 | ブルーワー サイエンス アイ エヌ シー. | Method of mounting device wafer reversely on carrier substrate |
US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
US9136105B2 (en) * | 2008-06-30 | 2015-09-15 | United Microelectronics Corp. | Bevel etcher |
US20110206833A1 (en) * | 2010-02-22 | 2011-08-25 | Lam Research Corporation | Extension electrode of plasma bevel etching apparatus and method of manufacture thereof |
US20130000848A1 (en) * | 2011-07-01 | 2013-01-03 | Novellus Systems Inc. | Pedestal with edge gas deflector for edge profile control |
TWI568319B (en) * | 2011-10-05 | 2017-01-21 | 應用材料股份有限公司 | Plasma processing apparatus and lid assembly thereof (2) |
US10099245B2 (en) * | 2013-03-14 | 2018-10-16 | Applied Materials, Inc. | Process kit for deposition and etching |
CN111180305A (en) * | 2013-06-26 | 2020-05-19 | 应用材料公司 | Single loop design for high throughput, substrate extreme edge defect reduction in ICP plasma processing chambers |
US9564285B2 (en) * | 2013-07-15 | 2017-02-07 | Lam Research Corporation | Hybrid feature etching and bevel etching systems |
US10937634B2 (en) * | 2013-10-04 | 2021-03-02 | Lam Research Corporation | Tunable upper plasma-exclusion-zone ring for a bevel etcher |
JP3210105U (en) * | 2016-03-04 | 2017-04-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Universal process kit |
US10276364B2 (en) * | 2017-05-08 | 2019-04-30 | Applied Materials, Inc. | Bevel etch profile control |
-
2019
- 2019-10-16 TW TW108137203A patent/TWI848010B/en active
- 2019-10-16 JP JP2021520122A patent/JP7539873B2/en active Active
- 2019-10-16 CN CN201980068405.XA patent/CN112913000A/en active Pending
- 2019-10-16 WO PCT/US2019/056472 patent/WO2020081644A1/en active Application Filing
- 2019-10-16 KR KR1020217014917A patent/KR20210062094A/en not_active Application Discontinuation
- 2019-10-16 SG SG11202103648WA patent/SG11202103648WA/en unknown
- 2019-10-16 US US17/283,048 patent/US20210351018A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20210062094A (en) | 2021-05-28 |
TW202029844A (en) | 2020-08-01 |
JP7539873B2 (en) | 2024-08-26 |
WO2020081644A1 (en) | 2020-04-23 |
CN112913000A (en) | 2021-06-04 |
TWI848010B (en) | 2024-07-11 |
US20210351018A1 (en) | 2021-11-11 |
JP2022502867A (en) | 2022-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL282916A (en) | Fused ring compounds | |
IL280797A (en) | Fused ring compounds | |
SG11202103648WA (en) | Lower plasma exclusion zone ring for bevel etcher | |
EP3816487C0 (en) | Seal ring | |
EP3100597A4 (en) | Plasma torch design | |
EP3273115A4 (en) | Seal ring | |
EP3273117A4 (en) | Sealing ring | |
EP3795868C0 (en) | Seal ring | |
EP3174866B8 (en) | Process for the epoxidation of an olefin | |
SG10201705059TA (en) | Enhanced cathodic arc source for arc plasma deposition | |
PL3380459T3 (en) | Process for the epoxidation of an olefin | |
PL3417498T3 (en) | Method for the production of silicone-based anodes for secondary butteries | |
EP3299681A4 (en) | Seal ring | |
HUE050560T2 (en) | Process for the epoxidation of an olefin | |
EP3364078A4 (en) | Seal ring | |
EP3273116A4 (en) | Seal ring | |
EP3998418C0 (en) | Seal ring | |
IL269532B (en) | Process for making arylomyin ring analogs | |
IL251535A0 (en) | Gas feedthrough assembly | |
HUE052019T2 (en) | Process for the epoxidation of propene | |
SG10201606452RA (en) | Annular edge seal with convex inner surface for electrostatic chuck | |
GB2578864B (en) | Trusted ring | |
GB201813451D0 (en) | Plasma apparatus | |
EP3496134A4 (en) | Ring for electrode | |
EP3424589A4 (en) | Plasma reactor |