JP5259270B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5259270B2
JP5259270B2 JP2008168093A JP2008168093A JP5259270B2 JP 5259270 B2 JP5259270 B2 JP 5259270B2 JP 2008168093 A JP2008168093 A JP 2008168093A JP 2008168093 A JP2008168093 A JP 2008168093A JP 5259270 B2 JP5259270 B2 JP 5259270B2
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voltage
temperature
memory cell
temperature sensor
semiconductor device
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Japanese (ja)
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JP2010009674A (ja
JP2010009674A5 (enExample
Inventor
雅雄 篠崎
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2008168093A priority Critical patent/JP5259270B2/ja
Priority to US12/432,796 priority patent/US7961500B2/en
Publication of JP2010009674A publication Critical patent/JP2010009674A/ja
Publication of JP2010009674A5 publication Critical patent/JP2010009674A5/ja
Priority to US13/102,295 priority patent/US8279696B2/en
Priority to US13/584,271 priority patent/US8611166B2/en
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Publication of JP5259270B2 publication Critical patent/JP5259270B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP2008168093A 2008-06-27 2008-06-27 半導体装置 Active JP5259270B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008168093A JP5259270B2 (ja) 2008-06-27 2008-06-27 半導体装置
US12/432,796 US7961500B2 (en) 2008-06-27 2009-04-30 Semiconductor device
US13/102,295 US8279696B2 (en) 2008-06-27 2011-05-06 Semiconductor device
US13/584,271 US8611166B2 (en) 2008-06-27 2012-08-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008168093A JP5259270B2 (ja) 2008-06-27 2008-06-27 半導体装置

Publications (3)

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JP2010009674A JP2010009674A (ja) 2010-01-14
JP2010009674A5 JP2010009674A5 (enExample) 2011-04-28
JP5259270B2 true JP5259270B2 (ja) 2013-08-07

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JP2008168093A Active JP5259270B2 (ja) 2008-06-27 2008-06-27 半導体装置

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US (3) US7961500B2 (enExample)
JP (1) JP5259270B2 (enExample)

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JP5259270B2 (ja) * 2008-06-27 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
US20090323400A1 (en) 2009-12-31
US7961500B2 (en) 2011-06-14
US20120320664A1 (en) 2012-12-20
JP2010009674A (ja) 2010-01-14
US8279696B2 (en) 2012-10-02
US20110211385A1 (en) 2011-09-01
US8611166B2 (en) 2013-12-17

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