JP2010009674A5 - - Google Patents
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- Publication number
- JP2010009674A5 JP2010009674A5 JP2008168093A JP2008168093A JP2010009674A5 JP 2010009674 A5 JP2010009674 A5 JP 2010009674A5 JP 2008168093 A JP2008168093 A JP 2008168093A JP 2008168093 A JP2008168093 A JP 2008168093A JP 2010009674 A5 JP2010009674 A5 JP 2010009674A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- voltage
- temperature
- memory cell
- control circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 34
- 230000003068 static effect Effects 0.000 claims 13
- 239000011159 matrix material Substances 0.000 claims 3
- 230000007423 decrease Effects 0.000 claims 2
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008168093A JP5259270B2 (ja) | 2008-06-27 | 2008-06-27 | 半導体装置 |
| US12/432,796 US7961500B2 (en) | 2008-06-27 | 2009-04-30 | Semiconductor device |
| US13/102,295 US8279696B2 (en) | 2008-06-27 | 2011-05-06 | Semiconductor device |
| US13/584,271 US8611166B2 (en) | 2008-06-27 | 2012-08-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008168093A JP5259270B2 (ja) | 2008-06-27 | 2008-06-27 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010009674A JP2010009674A (ja) | 2010-01-14 |
| JP2010009674A5 true JP2010009674A5 (enExample) | 2011-04-28 |
| JP5259270B2 JP5259270B2 (ja) | 2013-08-07 |
Family
ID=41447206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008168093A Active JP5259270B2 (ja) | 2008-06-27 | 2008-06-27 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (3) | US7961500B2 (enExample) |
| JP (1) | JP5259270B2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5259270B2 (ja) * | 2008-06-27 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2010282317A (ja) * | 2009-06-03 | 2010-12-16 | Elpida Memory Inc | 内部電源回路、半導体装置、及び半導体装置の製造方法 |
| JP5263015B2 (ja) * | 2009-06-08 | 2013-08-14 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| JP2012059330A (ja) * | 2010-09-10 | 2012-03-22 | Toshiba Corp | 半導体装置 |
| JP5659893B2 (ja) * | 2011-03-16 | 2015-01-28 | 株式会社リコー | 半導体記憶装置 |
| US8755239B2 (en) * | 2011-11-17 | 2014-06-17 | Texas Instruments Incorporated | Read assist circuit for an SRAM |
| US8693235B2 (en) * | 2011-12-06 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for finFET SRAM arrays in integrated circuits |
| US9939827B1 (en) * | 2011-12-16 | 2018-04-10 | Altera Corporation | Temperature dependent power supply circuitry |
| US8995218B2 (en) * | 2012-03-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8938573B2 (en) * | 2012-06-30 | 2015-01-20 | Intel Corporation | Row hammer condition monitoring |
| JP2014041668A (ja) | 2012-08-21 | 2014-03-06 | Fujitsu Semiconductor Ltd | 半導体記憶装置及び半導体記憶装置の制御方法 |
| JP5886974B2 (ja) * | 2012-09-20 | 2016-03-16 | 株式会社日立製作所 | 半導体記憶装置 |
| JP2014086112A (ja) * | 2012-10-24 | 2014-05-12 | Fujitsu Semiconductor Ltd | 半導体記憶装置 |
| US9165668B1 (en) * | 2013-07-29 | 2015-10-20 | Western Digital Technologies, Inc. | Data retention monitoring using temperature history in solid state drives |
| US9330790B2 (en) | 2014-04-25 | 2016-05-03 | Seagate Technology Llc | Temperature tracking to manage threshold voltages in a memory |
| KR102251810B1 (ko) | 2014-09-30 | 2021-05-13 | 삼성전자주식회사 | 메모리 장치, 메모리 시스템 및 메모리 장치에 대한 제어 방법 |
| US9607676B2 (en) * | 2015-08-12 | 2017-03-28 | Avalanche Technology, Inc. | Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (MTJ) based on temperature fluctuations |
| US9627041B1 (en) * | 2016-01-29 | 2017-04-18 | Qualcomm Incorporated | Memory with a voltage-adjustment circuit to adjust the operating voltage of memory cells for BTI effect screening |
| US9928898B2 (en) * | 2016-03-30 | 2018-03-27 | Qualcomm Incorporated | Wordline adjustment scheme |
| US9922700B2 (en) | 2016-05-24 | 2018-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory read stability enhancement with short segmented bit line architecture |
| US10163524B2 (en) | 2016-06-22 | 2018-12-25 | Darryl G. Walker | Testing a semiconductor device including a voltage detection circuit and temperature detection circuit that can be used to generate read assist and/or write assist in an SRAM circuit portion and method therefor |
| US9940999B2 (en) | 2016-06-22 | 2018-04-10 | Darryl G. Walker | Semiconductor devices, circuits and methods for read and/or write assist of an SRAM circuit portion based on voltage detection and/or temperature detection circuits |
| US9633734B1 (en) * | 2016-07-14 | 2017-04-25 | Ememory Technology Inc. | Driving circuit for non-volatile memory |
| US10062431B2 (en) | 2016-11-07 | 2018-08-28 | Ambiq Micro, Inc. | SRAM with multiple power domains |
| US10714166B2 (en) * | 2018-08-13 | 2020-07-14 | Micron Technology, Inc. | Apparatus and methods for decoding memory access addresses for access operations |
| US10726926B2 (en) | 2018-09-29 | 2020-07-28 | Sandisk Technologies Llp | Hot-cold VTH mismatch using VREAD modulation |
| US11435811B2 (en) | 2019-12-09 | 2022-09-06 | Micron Technology, Inc. | Memory device sensors |
| US11955171B2 (en) | 2021-09-15 | 2024-04-09 | Mavagail Technology, LLC | Integrated circuit device including an SRAM portion having end power select circuits |
| WO2025013462A1 (ja) * | 2023-07-11 | 2025-01-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、センシングデータの読み出し方法及び電子機器 |
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| US5784328A (en) * | 1996-12-23 | 1998-07-21 | Lsi Logic Corporation | Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array |
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| JP2000155617A (ja) * | 1998-11-19 | 2000-06-06 | Mitsubishi Electric Corp | 内部電圧発生回路 |
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| US6128239A (en) * | 1999-10-29 | 2000-10-03 | Hewlett-Packard | MRAM device including analog sense amplifiers |
| US6476716B1 (en) * | 2000-11-15 | 2002-11-05 | Dallas Semiconductor Corporation | Temperature-controlled variable resistor |
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| JP4669518B2 (ja) * | 2005-09-21 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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| KR100744131B1 (ko) * | 2006-02-21 | 2007-08-01 | 삼성전자주식회사 | 냉온에서 동작 속도가 향상되는 메모리 집적회로 장치 |
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| JP2008071440A (ja) * | 2006-09-14 | 2008-03-27 | Matsushita Electric Ind Co Ltd | 強誘電体メモリ装置及びその制御方法 |
| KR100851989B1 (ko) * | 2006-10-12 | 2008-08-13 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 온도정보 출력회로 및 방법 |
| ITRM20060652A1 (it) * | 2006-12-06 | 2008-06-07 | Micron Technology Inc | Compensazione di temperatura di segnali di memoria impiegando segnali digitali |
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| US7796424B2 (en) * | 2007-06-21 | 2010-09-14 | Qimonda North America Corp. | Memory device having drift compensated read operation and associated method |
| JP5212370B2 (ja) * | 2007-07-12 | 2013-06-19 | 富士通セミコンダクター株式会社 | 半導体装置 |
| JP5259270B2 (ja) * | 2008-06-27 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR101020282B1 (ko) * | 2008-07-09 | 2011-03-07 | 주식회사 하이닉스반도체 | 온도센서 |
| US8027187B2 (en) * | 2008-09-12 | 2011-09-27 | Micron Technology, Inc. | Memory sensing devices, methods, and systems |
| US7755965B2 (en) * | 2008-10-13 | 2010-07-13 | Seagate Technology Llc | Temperature dependent system for reading ST-RAM |
-
2008
- 2008-06-27 JP JP2008168093A patent/JP5259270B2/ja active Active
-
2009
- 2009-04-30 US US12/432,796 patent/US7961500B2/en active Active
-
2011
- 2011-05-06 US US13/102,295 patent/US8279696B2/en active Active
-
2012
- 2012-08-13 US US13/584,271 patent/US8611166B2/en active Active
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