JP5074035B2 - 電気化学的に製造した結晶質、多孔質、有機金属骨格材料を使用するガスを調節して貯蔵および放出する方法 - Google Patents
電気化学的に製造した結晶質、多孔質、有機金属骨格材料を使用するガスを調節して貯蔵および放出する方法 Download PDFInfo
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- JP5074035B2 JP5074035B2 JP2006540367A JP2006540367A JP5074035B2 JP 5074035 B2 JP5074035 B2 JP 5074035B2 JP 2006540367 A JP2006540367 A JP 2006540367A JP 2006540367 A JP2006540367 A JP 2006540367A JP 5074035 B2 JP5074035 B2 JP 5074035B2
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- acid
- metal
- gas
- dicarboxylic acid
- anode
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- CQZDWYYGOZOTHY-UHFFFAOYSA-N quinoxaline-2,3-dicarboxylic acid Chemical compound C1=CC=C2N=C(C(O)=O)C(C(=O)O)=NC2=C1 CQZDWYYGOZOTHY-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
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- 239000010948 rhodium Substances 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
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- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
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- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
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- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- ZWWLLYJRPKYTDF-UHFFFAOYSA-N thiophene-3,4-dicarboxylic acid Chemical compound OC(=O)C1=CSC=C1C(O)=O ZWWLLYJRPKYTDF-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- UCSBCWBHZLSFGC-UHFFFAOYSA-N tributoxysilane Chemical compound CCCCO[SiH](OCCCC)OCCCC UCSBCWBHZLSFGC-UHFFFAOYSA-N 0.000 description 1
- HJHUXWBTVVFLQI-UHFFFAOYSA-N tributyl(methyl)azanium Chemical compound CCCC[N+](C)(CCCC)CCCC HJHUXWBTVVFLQI-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000001226 triphosphate Substances 0.000 description 1
- 235000011178 triphosphate Nutrition 0.000 description 1
- 125000002264 triphosphate group Chemical class [H]OP(=O)(O[H])OP(=O)(O[H])OP(=O)(O[H])O* 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
水、
1、2,3または4個の炭素原子を有するアルコール、メタノール、エタノール、n−プロパノール、イソプロパノール、n−ブタノール、イソブタノール、t−ブタノール、
1,2,3または4個の炭素原子を有するカルボン酸、例えば蟻酸、酢酸、プロピオン酸またはブタン酸、
ニトリル、例えばアセトニトリル、またはシアノベンゼン、
ケトン、例えばアセトン、
少なくとも1回ハロゲン置換された低級アルカン、例えば塩化メチレンまたは1,2−ジクロロエタン、
酸アミド、例えば低級カルボン酸、例えば1,2,3または4個の炭素原子を有するカルボン酸のアミド、例えば蟻酸、酢酸、プロピオン酸またはブタン酸のアミド、例えばホルムアミド、ジメチルホルムアミド(DMF)、ジエチルホルムアミド(DEF)、t−ブチルホルムアミド、アセトアミド、ジメチルアセトアミド、ジエチルアセトアミド、またはt−ブチルアセトアミド、
環式エーテル、例えばテトラヒドロフラン、またはジオキサン、N−ホルミルアミド、またはN−アセチルアミド、または第1アミン、第2アミンまたは環状アミン、例えばエチルアミン、ジエチルアミン、ピペリジンまたはモルホリンの対称または非対称尿素誘導体、
アミン、例えばエタノールアミン、トリエチルアミンまたはエチレンジアミン、
ジメチルスルホキシド、
ピリジン、
トリアルキルホスファイトおよびホスフェート
または前記化合物の2種以上の混合物である。
1,4−ブタンジカルボン酸、酒石酸、グルタル酸、蓚酸、4−オキソピラン−2,6−ジカルボン酸、1,6−ヘキサンジカルボン酸、デカンジカルボン酸、1,8−ヘプタデカンジカルボン酸、1,9−ヘプタデカンジカルボン酸、ヘプタデカンジカルボン酸、アセチレンジカルボン酸、、1、2−ベンゼンジカルボン酸、2,3−ピリジンジカルボン酸、ピリジン−2,3−ジカルボン酸、1,3−ブタジエン−1,4−ジカルボン酸、1,4−ベンゼンジカルボン酸、1,3−ベンゼンジカルボン酸、イミダゾール−2,4−ジカルボン酸、2−メチルキノリン−3,4−ジカルボン酸、キノリン−2,4−ジカルボン酸、キノキサリン−2,3−ジカルボン酸、6−クロロキノキサリン−2,3−ジカルボン酸、4,4′−ジアミノフェニルメタン−3,3′−ジカルボン酸、キノリン−3,4−ジカルボン酸、7−クロロ−4−ヒドロキシキノリン−2,8−ジカルボン酸、ジイミドジカルボン酸、ピリジン−2,6−ジカルボン酸、2−メチルイミダゾール−4,5−ジカルボン酸、チオフェン−3,4−ジカルボン酸、2−イソプロピルイミダゾール−4,5−ジカルボン酸、テトラヒドロフラン−4,4′−ジカルボン酸、ペリーレン−3,9−ジカルボン酸、ペリーレンジカルボン酸、プルリオールE200−ジカルボン酸、3,6−ジオキサオクタンジカルボン酸、3,5−シクロヘキサジエン−1,2−ジカルボン酸、オクタンジカルボン酸、ペンタン−3,3′−ジカルボン酸、4,4′−ジアミノ−1,1′−ジフェニル−3,3′−ジカルボン酸、4,4′−ジアミノジフェニル−3,3′−ジカルボン酸、ベンジジン−3,3′−ジカルボン酸、1,4−ビス−(フェニルアミノ)−ベンゼン−2,5−ジカルボン酸、1,1′−ビナフチル−8,8′−ジカルボン酸、7−クロロ−8−メチルキノリン−2,3−ジカルボン酸、1−アニリノアントラキノン−2,4′−ジカルボン酸、ポリテトラヒドロフラン−250−ジカルボン酸、1,4−ビス−(カルボキシメチル)−ピペラジン−2,3−ジカルボン酸、7−クロロキノリン−3,8−ジカルボン酸、1−(4−カルボキシ)フェニル−3−(4−クロロ)フェニルピラゾリン−4,5−ジカルボン酸、1,4,5,6,7,7−ヘキサクロロ−5−ノルボルネン−2,3−ジカルボン酸、フェニルインダンジカルボン酸、1,3−ジベンジル−2−オキソ−イミダゾリン−4,5−ジカルボン酸、1,4−シクロヘキサンジカルボン酸、ナフタレン−1,8−ジカルボン酸、2−ベンゾイルベンゼン−1,3−ジカルボン酸、1,3−ジベンジル−2−オキソイミダゾリン−4,5−ジカルボン酸、2,2′−ビキノリン−4,4′−ジカルボン酸、ピリジン−3,4−ジカルボン酸、3,6,9−トリオキサウンデカンジカルボン酸、O−ヒドロキシベンゾフェノンジカルボン酸、プルリオールE300−ジカルボン酸、プルリオールE400−ジカルボン酸、プルリオールE600−ジカルボン酸、ピラゾール−3,4−ジカルボン酸、2,3−ピラジンジカルボン酸、5,6−ジメチル−2,3−ピラジンジカルボン酸、4,4′−ジアミノ(ジフェニルエーテル)ジイミドジカルボン酸、4,4′−ジアミノジフェニルメタンジイミドジカルボン酸、4,4′−ジアミノ(ジフェニルスルホン)ジイミドジカルボン酸、2,6−ナフタレンジカルボン酸、1,3−アダマンタンジカルボン酸、1,8−ナフタレンジカルボン酸、2,3−ナフタレンジカルボン酸、8−メトキシ−2,3−ナフタレンジカルボン酸、8−ニトロ−2,3−ナフタレンジカルボン酸、8−スルホ−2,3−ナフタレンジカルボン酸、アントラセン−2,3−ジカルボン酸、2′,3′−ジフェニル−p−テルフェニル−4,4′′−ジカルボン酸、(ジフェニルエーテル)−4,4′−ジカルボン酸、イミダゾール−4,5−ジカルボン酸、4(1H)−オキソ−チオクロメン−2,8−ジカルボン酸、5−t−ブチル−1,3−ベンゼンジカルボン酸、7,8−キノリンジカルボン酸、4,5−イミダゾールジカルボン酸、4−シクロヘキセン−1,2−ジカルボン酸、ヘキサトリアコンタンジカルボン酸、テトラデカンジカルボン酸、1,7−ヘプタンジカルボン酸、5−ヒドロキシ−1,3−ベンゼンジカルボン酸、ピラジン−2,3−ジカルボン酸、フラン−2,5−ジカルボン酸、1−ノネン−6,9−ジカルボン酸、エイコセンジカルボン酸、4,4′−ジヒドロキシジフェニルメタン−3,3′−ジカルボン酸、1−アミノ−4−メチル−9,10−ジオキソ−9,10−ジヒドロアントラセン−2,3−ジカルボン酸、2,5−ピリジンジカルボン酸、シクロヘキセン−2,3−ジカルボン酸、2,9−ジクロロフルオルビン−4,11−ジカルボン酸、7−クロロ−3−メチルキノリン−6,8−ジカルボン酸、2,4−ジクロロベンゾフェノン−2′,5′−ジカルボン酸、1,3−ベンゼンジカルボン酸、2,6−ピリジンジカルボン酸、1−メチルピロール−3,4−ジカルボン酸、1−ベンジル−1H−ピロール−3,4−ジカルボン酸、アントラキノン−1,5−ジカルボン酸、3,5−ピラゾールジカルボン酸、2−ニトロベンゼン−1,4−ジカルボン酸、ヘプタン−1,7−ジカルボン酸、シクロブタン−1,1−ジカルボン酸、1,14−テトラデカンジカルボン酸、5,6−デヒドロノルボルナン−2,3−ジカルボン酸、または5−エチル−2,3−ピリジンジカルボン酸、
トリカルボン酸、例えば
2−ヒドロキシ−1,2,3−プロパントリカルボン酸、7−クロロ−2,3,8−キノリントリカルボン酸、1,2,4−ベンゼントリカルボン酸、1,2,4−ブタントリカルボン酸、2−ホスホノ−1,2,4−ブタンジカルボン酸、1,3,5−ベンゼントリカルボン酸、1−ヒドロキシ−1,2,3−プロパントリカルボン酸、4,5−ジヒドロ−4,5−ジオキソ−1H−ピロロ[2,3−F]キノリン−2,7,9−トリカルボン酸、5−アセチル−3−アミノ−6−メチルベンゼン−1,2,4−トリカルボン酸、3−アミノ−5−ベンゾイル−6−メチルベンゼン−1,2,4−トリカルボン酸、1,2,3−プロパントリカルボン酸またはアウリントリカルボン酸、
またはテトラカルボン酸、例えば
1,1−ジオキシドペリロ[1,12−BCD]チオフェン−3,4,9,10−テトラカルボン酸、ペリーレンテトラカルボン酸、例えばペリーレン−3,4,9,10−テトラカルボン酸またはペリーレン−1.12−スルホン−3,4,9,10−テトラカルボン酸、ブタンテトラカルボン酸、例えば1,2,3,4−ブタンテトラカルボン酸、またはメソ−1,2,3,4−ブタンテトラカルボン酸、デカン−2,4,6,8−テトラカルボン酸、1,4,7,10,13,16−ヘキサオキサシクロオクタジエン−2,3,11,12−テトラカルボン酸、1,2,4,5−ベンゼンテトラカルボン酸、1,2,11,12−ドデカンテトラカルボン酸、1,2,5,6−ヘキサンテトラカルボン酸、1,2,7,8−オクタンテトラカルボン酸、1,4,5,8−ナフタレンテトラカルボン酸、1,2,9,10−デカンテトラカルボン酸、ベンゾフェノンテトラカルボン酸、3,3′,4,4′−ベンゾフェノンテトラカルボン酸、テトラヒドロフランテトラカルボン酸、またはシクロペンタンテトラカルボン酸、例えばシクロペンタン−1,2,3,4−テトラカルボン酸
を記載することができる。
Zn/BDC/DEF、Zn/DHBDC/DEF、Zn/H2BDC/DMF、Zn/BDC/DMF、MeOH、
Zn/H2BDC/DMF、Zn/4,4′−BP−2,2′−DC/DEF、Zn/2,6−NDC/DEF、
Zn/H3BTB/H2O、DMF、EtOH、Zn/H2BDC/DMSO、Zn/1,4−NDC/DMF、
Zn/H3BTB/DMF、EtOH、Zn/H2BDC/DMF、AN、Zn/H2BDC/DMSO、
Zn/H2BDC/DMSO、MeOH、Zn/H2BDC/DMSO、n−プロパノール、Zn/H2BDC/NMP、
Zn/m−BDC/DMF、AN、Zn/1,4−NDC/DMF、EtOH、Zn/H2N−BDC/DEF、EtOH、
Zn/1,4−NDC/DEF、Zn/2,6−NDC/DEF、Zn/PDC/DEF、
Cu/BDC/DEF、Cu/1,3,5−BTC/EtOH、Cu/1,2,3−BTC/MeOH、Cu/H3BTB/H2O、DMF、EtOH、
Cu/H2BDC(OH)2/DMF、Cu/チオフェンジカルボン酸/DEF、Cu/チオフェンジカルボン酸/DMF、Cu/チオフェンジカルボン酸/MeOH、Cu/マロン酸/DMF、Cu/グルタル産/DMF、Cu/酒石酸/DMF、
Fe/H2BDC/DMF、Fe/H3BDC/DMF、Fe/BTC/DMF、Fe/BDC/DMF、EtOH、Fe/BPDC/DMF、n−プロパノール、Fe/m−BDC/ピリジン、Fe/m−BDC/DMF、ピリジン、
Co/BDC/MeOH、Co/H2BDC/NMP、Co/H2BDC/DMF、
Mg/BDC/DEF、Mg/BDC(OH)2/DMF、
Pb/H2BDC/DMF、EtOH。
BDC ベンゼンジカルボン酸
m−BDC m−ベンゼンジカルボン酸
H2BDC ジヒドロテレフタル酸
H2N−BDC アミノテレフタル酸
4,4′−BP−2,2′−DC 4,4′−ビフェニル−2,2′−ジカルボン酸
4,4′−BPDC 4,4′−ビフェニルジカルボン酸
H3BTB ベンゼントリベンゾエート
1,3,5−BTC 1,3,5−ベンゼントリカルボン酸
1,2,3−BTC 1,2,3−ベンゼントリカルボン酸
DHBDC 2,5−ジヒドロキシテレフタル酸
2,6−NDC 2,6−ナフタレンジカルボン酸
1,4−NDC 1,4−ナフタレンジカルボン酸
PDC ピレンジカルボン酸。
対称的アンモニウムイオン、例えば有利にC1〜C4−アルキル、例えばメチル、エチル、n−プロピル、イソプロピル、n−ブチル、イソブチル、t−ブチルを有するテトラアルキルアンモニウムイオン、例えばテトラメチルアンモニウム、テトラエチルアンモニウム、テトラプロピルアンモニウム、テトラブチルアンモニウム、または
非対称的アンモニウムイオン、例えば有利にC1〜C4−アルキル、例えばメチル、エチル、n−プロピル、イソプロピル、n−ブチル、イソブチル、t−ブチルを有するテトラアルキルアンモニウムイオン、例えばメチルトリブチルアンモニウム、または
少なくとも1個のアリール、例えばフェニルまたはナフチル、または少なくとも1個のアルカリール、例えばベンジル、または少なくとも1個のアラルキル、および少なくとも1個のアルキル、有利にC1〜C4−アルキル、例えばメチル、エチル、n−プロピル、イソプロピル、n−ブチル、イソブチル、t−ブチルを有するアンモニウムイオン、例えばアリールトリアルキルを有するアンモニウムイオン、例えばベンジルトリメチルアンモニウムまたはベンジルトリエチルアンモニウム。
(i)水素のカソード形成に有利に作用する電解質を使用する
(ii)カソード減極を生じる少なくとも1種の化合物を添加する
(iii)適当な水素の過剰電圧を有する電極を使用する
ことにより、少なくとも1種の金属イオンのカソード再堆積を少なくとも部分的に回避する、前記方法を提供する。
骨格を単独で「または少なくとも1種の結合剤および/または少なくとも1種のペースト形成剤および/または少なくとも1種の鋳型化合物と一緒に混合して混合物を形成し、得られた混合物を少なくとも1つの適当な方法、例えば押出しにより成形し、押出し品を洗浄および/または乾燥および/または焼成し、場合により仕上げする。
骨格を少なくとも1種の適当な場合は多孔質担体材料に取り付ける。得られた材料を引き続き前記方法により更に処理して成形体を形成することができる。
骨格を少なくとも1種の適当な場合は多孔質基材に取り付ける。
特に有利な構成において、添加剤として添加される少なくとも1種の化合物を少なくとも部分的にこの乾燥作業中に成形体から除去する。
ドイツ特許第10355087号の実施例に記載される電気化学的に製造したCuMOFをすべての例に使用した。
25℃で3mmのEMOFの押出品にメタンを吸着した。通常の秤で測定した。試料を120℃および1ミリバール未満の圧力で約20時間乾燥した。EMOFは616m2/gの表面積を有した。
25℃でCO2を3mmのEMOFの押出品に吸着した。通常の秤で測定した。試料を120℃および1ミリバール未満の圧力で約20時間乾燥した。EMOFは616m2/gの表面積を有した。
プロペンを70℃で収着した。試料を秤中で、70℃で約2.5時間乾燥した。EMOFは粉末の形で存在し、1649m2/gの表面積を有した。
CO2を25℃で収着した。13Xモレキュラーシーブを25℃および0.1ミリバールで約5時間乾燥した。モレキュラーシーブは730m2/gの表面積を有した。
25℃で3mmのEMOFの押出品上でメタンを吸着した。通常の秤で測定した。試料を120℃および1ミリバール未満の圧力で約40時間乾燥した。EMOFは2380m2/gの表面積を有した。
Claims (8)
- a)少なくとも1種の少なくとも二座の有機化合物を含有する反応媒体中で、少なくとも1の金属イオンに配位した少なくとも1種の少なくとも二座の有機化合物を含有する金属有機骨格を電気化学的に製造する工程であって、少なくとも1の金属イオンは相応する金属を含有する少なくとも1つのアノードを酸化することにより反応媒体中で準備され、かつ少なくとも1種の少なくとも二座の有機化合物はジカルボン酸、トリカルボン酸またはテトラカルボン酸である工程、
b)電気化学的に製造された金属有機骨格を、吸収および貯蔵されるガスに適した条件下で、吸収および/または貯蔵されるガスと接触させる工程
を有する、ガスを吸収および/または貯蔵する方法であって、吸収および/または貯蔵されるガスが、H2、H2含有ガス混合物、メタン、エタン、プロパン、ブタンから選択されるガスであり、かつ金属がZn、Cu、Ni、Pd、Pt、Ru、Rh、Fe、Mn、AgおよびCoからなる群から選択される金属である、ガスを吸収および/または貯蔵する方法。 - 貯蔵を0〜100℃の温度で実施する請求項1記載の方法。
- 貯蔵を1〜300バール(絶対圧力)の圧力で実施する請求項1または2記載の方法。
- 圧力の減少または温度の上昇により貯蔵されたガスを再び放出する請求項1から3までのいずれか1項記載の方法。
- 金属有機骨格(MOF)が気密容器中に存在する請求項1から4までのいずれか1項記載の方法。
- 容器が燃料電池またはその部品に接続されている請求項5記載の方法。
- 燃料電池が発電所、動力車または電子機器のケーブルレスの用途に使用される請求項6記載の方法。
- 電気化学的に製造した金属有機骨格が元素周期表のIa、IIa、IIIa、IVa〜VIIIaおよびIbおよびVIb族の金属を含有する請求項1から7までのいずれか1項記載の方法。
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EP3991827A1 (en) * | 2020-10-30 | 2022-05-04 | Denso Corporation | Carbon dioxide recovery system and working electrode |
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JP2011042881A (ja) | 2011-03-03 |
CA2544859C (en) | 2012-10-02 |
CN1886536B (zh) | 2010-12-08 |
EP1687462A1 (de) | 2006-08-09 |
US8163949B2 (en) | 2012-04-24 |
JP2011064336A (ja) | 2011-03-31 |
KR20060111618A (ko) | 2006-10-27 |
JP2007534896A (ja) | 2007-11-29 |
CA2546327A1 (en) | 2005-06-02 |
JP2007533846A (ja) | 2007-11-22 |
DE10355087A1 (de) | 2005-06-09 |
MXPA06004620A (es) | 2006-12-14 |
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WO2005049892A1 (de) | 2005-06-02 |
CN1886334A (zh) | 2006-12-27 |
EP1687462B1 (de) | 2019-03-13 |
US20070248852A1 (en) | 2007-10-25 |
KR101166590B1 (ko) | 2012-07-18 |
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