JP2014160863A - プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス - Google Patents
プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス Download PDFInfo
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- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Abstract
【解決手段】量子ドットのサイズ分布は、そこから放出されるべき特定の色を可能にするために選択される。デバイスから放出された光は単色又は混合色(多色)のいずれでもよく、ドットから放出された光のみから成るか、又はドットから放出された光、及び第1の光源から放出された光の混合から成る。ドットは、CdSeのようなドーピングされていない半導体から成るのが望ましく、光ルミネセンスを増加させるために任意に被覆できる。
【選択図】図1
Description
緑色LEDは、上記本発明の原理により構成されてきた。このダイオードを構成するために使用される量子ドットは、CdSeコア及びZnSシェルから成る。量子ドットの吸収特性及び発光特性は、第1にCdSeコアのサイズにより決定される。ZnSシェルは、電子及びホールをコアの中に閉じ込め、量子ドット表面を電気的かつ化学的に保護するために作用する。コア及びシェル双方は、高温の有機液体に加えられた前駆物質からのCdSe又はZnS生成を含む湿式化学技術を使用して合成される。
16mLのトリオクチルホスフィン(TOP)、TOP中の4mLの1Mセレン化トリオクチルホスフィン(TOPSe)、及び0.2mLのジメチルカドミウムが、不活性雰囲気(グローブボックスに充填された窒素)中で混合された。30gの酸化トリオクチルホスフィン(TOPO)が180℃の真空のもとで1時間にわたって乾燥され、次に350℃の窒素のもとで加熱される。次に前駆物質溶液がTOPO中に注入される。温度は直ちに約260℃まで下がり、CdSeナノクリスタルが直ちに形成される。注入直後のナノクリスタルの吸収ピークは、約470ナノメートルであることがわかった。温度は約10〜15分の間250〜260℃に保持され、ナノクリスタルが成長することを可能にする。この時間の間、吸収ピークは470ナノメートルから490ナノメートルへシフトする。次にこの温度は80℃まで下がり、窒素のもとで溶液中で保持される。熱は除去され、TOPOが室温まで冷却されたときにTOPOの凝固を防ぐために、約15mLのブタノールが加えられる。このプロセスは、2.7x10-3mol(2.7mmol)のCdSe量子ドットを生成した。
5分の1(0.5mmol)のCdSeコア成長溶液(15mL)が、被覆された量子ドットの生成に使用された。40〜50mLのメタノールをゆっくり加えることにより、ナノクリスタルが溶液の外部に析出した。次に析出はヘキサン中で再分散され、0.2マイクロメートルのフィルタ紙で濾過される。40gのTOPOは上記のように乾燥され、次に80℃まで冷却される。ヘキサン中のナノクリスタルはTOPO中に注入され、ヘキサンが2時間にわたって真空のもとで蒸発させられた。次に、4mLのTOPを混合することにより、ZnS前駆物質溶液が不活性雰囲気中で準備された。0.28mLのジエチル亜鉛、及び0.56mLのビス−トリメチルシリルが、(TMS)2Sを硫化する。前駆物質の量は厚さ約9オングストロームのZnSシェルを生成するように選択され、9オングストロームは2.3オングストローム/単分子層での4単分子層に対応する。次に、ナノクリスタル/TOPO溶液は140℃まで加熱され、前駆物質溶液は4分間にわたってゆっくりと滴り落ちた。次に温度が100℃まで下がり、少なくとも2時間にわたって保持された。熱が除去され、TOPOの凝固を防ぐためにブタノールが加えられた。
次に、これらの量子ドットは、ポリ(スチレン)中で分散する。上記のように生成されたTOPO溶液中の5分の1(0.1mmolのCdSe)の量子ドットが取り出された。量子ドットは析出させられ、次に上記のようにヘキサン中で分散した。次にヘキサン溶液中の5分の1(0.02mmolのCdSe)の量子ドットが取り出され、真空の元でヘキサンが蒸発した。量子ドットが0.1mLのトルエン中で再分散された。0.05gのN官能化アミン末端ポリスチレン(分子量=2600)が、0.2mLのトルエン中で溶解された。量子ドット(0.01mmolのCdSe)及び0.05mLの官能化されたポリスチレンをトルエン(約0.01g)中に含む0.05mLのトルエン溶液が混合され、約10分にわたって超音波処理された。1mLのトルエン中に1gのポリスチレン(分子量=45,000)の溶液が準備された。0.1mLのこの濃縮されたポリスチレン溶液(約0.05gのポリスチレン)が、量子ドット/官能化されたポリスチレン溶液に加えられた。ドット及びポリスチレンを徹底的に混合するために、結果として生成した溶液が2分間にわたって超音波処理された。
第1の光源として使用される青色ダイオードはGaNをベースにしており、450ナノメートルにおいて発光ピークを有した。ガラスキャップは短くされた、壁厚が薄いNMRチューブ(外径=5mm、内径=4.3mm、長さ=3/16インチ)であった。ガラスキャップはドット/ポリマ溶液で充填され、2時間以上にわたって流体窒素のもとで乾燥されることを可能にする。必要なときにより多くのドット/ポリマ溶液を加えて乾燥できるが、このダイオードには1つの充填及び乾燥のステップだけが必要であった。乾燥したとき、ポリマはキャップのベースにボイド(void)を残した。青色ダイオードの放出部分は、キャップのベースにおけるこのボイドに配置される。ポリマ自体は、ダイオードと接触しなかった。緑色光はGaNをベースにしたダイオードからの青色光が量子ドットを含むポリマを貫通したときに生成され、量子ドットを550ナノメートルで発光させた。550ナノメートルの光は、ダイオードを緑色に見えさせた。
14オングストロームのコア半径を有するCdSe/ZnS量子ドットが、実施例1で記載したように準備された。TOPO溶液中の2.5x10-3mmolのドットが取り出され、ドットは析出し、メタノールで2回洗浄された。次にドットは、0.27mL(2mmol)のキャッピングモノマ(6−メルカプトヘキサノール)中で再分散した。キャッピングモノマ中で量子ドットを効率的に分散させるために、溶液は最初に約10分間超音波処理され、次に50〜60℃で2分間かき混ぜられた。
12 ホストマトリックス
14、18、22 量子ドット
16、20 層
Claims (6)
- 第1の光源として機能するデバイスと、
ホストマトリクス中に分散した光輝性の量子ドットの集団であって、前記量子ドットの少なくとも一部が、前記光源によって生成される光の少なくとも一部のエネルギーよりも小さいバンドギャップエネルギーを有し、前記ホストマトリクスが前記光源からの光を透過させ、これにより、前記量子ドットにそのサイズの色特性の光ルミネセンス光を生成させることを特徴とする電子装置。 - 前記量子ドットが前記ホストマトリクスに対して親和性を有するコーティングを備える請求項1に記載の電子装置。
- 前記ホストマトリクスがポリマを含み、前記コーティングが関連するモノマを含む請求項2に記載の電子装置。
- 第1の光源として機能するデバイスを用意することと、
ホストマトリクス中に分散した光輝性の量子ドットの集団を配置することであって、前記量子ドットの少なくとも一部が、前記光源によって生成される光の少なくとも一部のエネルギーよりも小さいバンドギャップエネルギーを有し、前記ホストマトリクスが前記光源からの光を透過させ、これにより、前記量子ドットにそのサイズの色特性の光ルミネセンス光を生成させること
を含む電子装置の製造方法。 - 前記量子ドットが前記ホストマトリクスに対して親和性を有するコーティングを備える請求項4に記載の電子装置の製造方法。
- 前記ホストマトリクスがポリマを含み、前記コーティングが関連するモノマを含む請求項5に記載の電子装置の製造方法。
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US9212098P | 1998-04-01 | 1998-04-01 | |
US60/092,120 | 1998-04-01 | ||
US09/167,795 US6501091B1 (en) | 1998-04-01 | 1998-10-07 | Quantum dot white and colored light emitting diodes |
US09/167,795 | 1998-10-07 |
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JP2000541740A Expired - Lifetime JP5031141B2 (ja) | 1998-04-01 | 1999-04-01 | 量子ドット白色及び着色発光ダイオード |
JP2011042580A Pending JP2011142336A (ja) | 1998-04-01 | 2011-02-28 | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス |
JP2014096216A Expired - Lifetime JP6092809B2 (ja) | 1998-04-01 | 2014-05-07 | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス |
JP2015254999A Pending JP2016114949A (ja) | 1998-04-01 | 2015-12-25 | 量子ドットコロイド及びそれを備える発光デバイス |
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JP2000541740A Expired - Lifetime JP5031141B2 (ja) | 1998-04-01 | 1999-04-01 | 量子ドット白色及び着色発光ダイオード |
JP2011042580A Pending JP2011142336A (ja) | 1998-04-01 | 2011-02-28 | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス |
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US (12) | US6501091B1 (ja) |
EP (3) | EP2325897B1 (ja) |
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WO (1) | WO1999050916A1 (ja) |
Families Citing this family (505)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3773541B2 (ja) | 1996-06-26 | 2006-05-10 | シーメンス アクチエンゲゼルシヤフト | ルミネセンス変換エレメントを有する半導体発光素子 |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6207392B1 (en) | 1997-11-25 | 2001-03-27 | The Regents Of The University Of California | Semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US7498164B2 (en) | 1998-05-16 | 2009-03-03 | Applied Biosystems, Llc | Instrument for monitoring nucleic acid sequence amplification reaction |
ATE403856T1 (de) | 1998-05-16 | 2008-08-15 | Applera Corp | Gerät zur überwachung der polymerase-ketten reaktion von dna |
US6818437B1 (en) | 1998-05-16 | 2004-11-16 | Applera Corporation | Instrument for monitoring polymerase chain reaction of DNA |
EP1039291A1 (en) * | 1999-03-26 | 2000-09-27 | Sony International (Europe) GmbH | Optochemical sensor and method for its construction |
US20070164661A1 (en) * | 1999-07-26 | 2007-07-19 | Idemitsu Kosan Co., Ltd. | Fluorescent conversion medium and color light emitting device |
GB2357856B (en) * | 1999-12-29 | 2001-12-19 | Keymed | Annular light source in borescopes and endoscopes |
CA2406983A1 (en) | 2000-03-14 | 2001-09-27 | Massachusetts Institute Of Technology | A gain medium and lasers based on close-packed semiconductor nanocrystals |
US6921496B2 (en) | 2000-03-20 | 2005-07-26 | Massachusetts Institute Of Technology | Inorganic particle conjugates |
US6759235B2 (en) | 2000-04-06 | 2004-07-06 | Quantum Dot Corporation | Two-dimensional spectral imaging system |
US6919119B2 (en) | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
US7005229B2 (en) | 2002-10-02 | 2006-02-28 | 3M Innovative Properties Company | Multiphoton photosensitization method |
US7381516B2 (en) | 2002-10-02 | 2008-06-03 | 3M Innovative Properties Company | Multiphoton photosensitization system |
US7265161B2 (en) | 2002-10-02 | 2007-09-04 | 3M Innovative Properties Company | Multi-photon reactive compositions with inorganic particles and method for fabricating structures |
US7118845B2 (en) * | 2000-06-15 | 2006-10-10 | 3M Innovative Properties Company | Multiphoton photochemical process and articles preparable thereby |
JP2002141556A (ja) | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
US6774560B1 (en) * | 2000-09-19 | 2004-08-10 | The Regents Of The University Of California | Material system for tailorable white light emission and method for making thereof |
US6649138B2 (en) | 2000-10-13 | 2003-11-18 | Quantum Dot Corporation | Surface-modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media |
TW498702B (en) * | 2000-11-28 | 2002-08-11 | Hannstar Display Corp | Polarized electro-luminescence device and manufacturing method for the same |
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
US20020110180A1 (en) * | 2001-02-09 | 2002-08-15 | Barney Alfred A. | Temperature-sensing composition |
EP2218762A3 (en) * | 2001-07-20 | 2010-09-29 | Life Technologies Corporation | Luminescent nanoparticles and methods for their preparation |
US7265833B2 (en) | 2001-07-25 | 2007-09-04 | Applera Corporation | Electrophoretic system with multi-notch filter and laser excitation source |
US6794265B2 (en) | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
US6710366B1 (en) * | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
US6819845B2 (en) | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
EP1438614B1 (en) | 2001-09-17 | 2009-05-13 | Massachusetts Institute Of Technology | Semiconductor nanocrystal composite |
IL146226A0 (en) * | 2001-10-29 | 2002-12-01 | Yissum Res Dev Co | Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom |
EP1309013A1 (en) * | 2001-10-30 | 2003-05-07 | Agfa-Gevaert | A thin layer inorganic light emitting device with undoped zinc sulfide nanoparticles |
US6724141B2 (en) | 2001-10-30 | 2004-04-20 | Agfa-Gevaert | Particular type of a thin layer inorganic light emitting device |
US7150910B2 (en) | 2001-11-16 | 2006-12-19 | Massachusetts Institute Of Technology | Nanocrystal structures |
JP2003282944A (ja) * | 2002-03-26 | 2003-10-03 | Shin Etsu Handotai Co Ltd | 可視光発光装置 |
EP2902464B1 (en) * | 2002-03-29 | 2019-09-18 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US6711426B2 (en) * | 2002-04-09 | 2004-03-23 | Spectros Corporation | Spectroscopy illuminator with improved delivery efficiency for high optical density and reduced thermal load |
US20080009689A1 (en) * | 2002-04-09 | 2008-01-10 | Benaron David A | Difference-weighted somatic spectroscopy |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
US7515333B1 (en) | 2002-06-13 | 2009-04-07 | Nanosy's, Inc. | Nanotechnology-enabled optoelectronics |
US8025816B2 (en) * | 2002-06-19 | 2011-09-27 | National Institute Of Advanced Industrial Science And Technology | Semiconductor superfine particle phosphor and light emitting device |
US7319709B2 (en) | 2002-07-23 | 2008-01-15 | Massachusetts Institute Of Technology | Creating photon atoms |
WO2004042784A2 (en) * | 2002-08-15 | 2004-05-21 | Massachussetts Institute Of Technology | Stabilized semiconductor nanocrystals |
JP2004083653A (ja) * | 2002-08-23 | 2004-03-18 | Sharp Corp | 発光装置ならびに蛍光体およびその製造方法 |
WO2004023527A2 (en) * | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
CN100584921C (zh) * | 2002-09-05 | 2010-01-27 | 奈米系统股份有限公司 | 促进电荷转移至纳米结构或自纳米结构转移出电荷的有机物 |
US20050126628A1 (en) * | 2002-09-05 | 2005-06-16 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
JP2004107572A (ja) * | 2002-09-20 | 2004-04-08 | Sharp Corp | 蛍光体およびそれを含む照明装置と表示装置 |
US7332211B1 (en) | 2002-11-07 | 2008-02-19 | Massachusetts Institute Of Technology | Layered materials including nanoparticles |
US7132787B2 (en) * | 2002-11-20 | 2006-11-07 | The Regents Of The University Of California | Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof |
US20040101822A1 (en) * | 2002-11-26 | 2004-05-27 | Ulrich Wiesner | Fluorescent silica-based nanoparticles |
US7245072B2 (en) * | 2003-01-27 | 2007-07-17 | 3M Innovative Properties Company | Phosphor based light sources having a polymeric long pass reflector |
WO2004068603A2 (en) * | 2003-01-27 | 2004-08-12 | 3M Innovative Properties Company | Phosphor based light source component and method of making |
US7118438B2 (en) * | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
US7091653B2 (en) | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
US20040159900A1 (en) * | 2003-01-27 | 2004-08-19 | 3M Innovative Properties Company | Phosphor based light sources having front illumination |
US20040145312A1 (en) * | 2003-01-27 | 2004-07-29 | 3M Innovative Properties Company | Phosphor based light source having a flexible short pass reflector |
US7091661B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a reflective polarizer |
US7210977B2 (en) | 2003-01-27 | 2007-05-01 | 3M Innovative Properties Comapny | Phosphor based light source component and method of making |
US7312560B2 (en) * | 2003-01-27 | 2007-12-25 | 3M Innovative Properties | Phosphor based light sources having a non-planar long pass reflector and method of making |
US20060214903A1 (en) * | 2003-02-21 | 2006-09-28 | Sanyo Electric Co., Ltd. | Light-emitting device and display |
EP2365095A1 (en) | 2003-02-26 | 2011-09-14 | Callida Genomics, Inc. | Random array DNA analysis by hybridization |
DE10308866A1 (de) * | 2003-02-28 | 2004-09-09 | Osram Opto Semiconductors Gmbh | Beleuchtungsmodul und Verfahren zu dessen Herstellung |
US7181266B2 (en) * | 2003-03-04 | 2007-02-20 | Massachusetts Institute Of Technology | Materials and methods for near-infrared and infrared lymph node mapping |
US20050020922A1 (en) * | 2003-03-04 | 2005-01-27 | Frangioni John V. | Materials and methods for near-infrared and infrared intravascular imaging |
US20060170331A1 (en) * | 2003-03-11 | 2006-08-03 | Dietrich Bertram | Electroluminescent device with quantum dots |
US7279832B2 (en) * | 2003-04-01 | 2007-10-09 | Innovalight, Inc. | Phosphor materials and illumination devices made therefrom |
US20040252488A1 (en) * | 2003-04-01 | 2004-12-16 | Innovalight | Light-emitting ceiling tile |
DE10316769A1 (de) * | 2003-04-10 | 2004-10-28 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoffbassierte LED und zugehöriger Leuchtstoff |
KR100691143B1 (ko) | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
US8859000B2 (en) * | 2003-05-05 | 2014-10-14 | The Research Foundation Of State University Of New York | Synthesis of nanoparticles by an emulsion-gas contacting process |
US6828576B2 (en) * | 2003-06-11 | 2004-12-07 | Paul Spivak | UV LED light projection method and apparatus |
WO2005008221A1 (en) * | 2003-07-08 | 2005-01-27 | Applera Corporation | Time-delay integration in a flow cytometry system |
EP1652218A2 (en) * | 2003-08-04 | 2006-05-03 | Nanosys, Inc. | System and process for producing nanowire composites and electronic substrates therefrom |
TWI233697B (en) * | 2003-08-28 | 2005-06-01 | Genesis Photonics Inc | AlInGaN light-emitting diode with wide spectrum and solid-state white light device |
AU2004271599A1 (en) * | 2003-09-05 | 2005-03-17 | Dot Metrics Technology, Inc | Quantum dot optoelectronic devices with nanoscale epitaxial overgrowth and methods of manufacture |
DE10354936B4 (de) * | 2003-09-30 | 2012-02-16 | Osram Opto Semiconductors Gmbh | Strahlungemittierendes Halbleiterbauelement |
EP2299482A3 (en) * | 2003-10-06 | 2014-12-17 | Massachusetts Institute Of Technology | Non-volatile memory device |
US7122827B2 (en) | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
US8264431B2 (en) | 2003-10-23 | 2012-09-11 | Massachusetts Institute Of Technology | LED array with photodetector |
TWI291770B (en) * | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
US7667766B2 (en) * | 2003-12-18 | 2010-02-23 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Adjustable spectrum flash lighting for image acquisition |
US7318651B2 (en) * | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
US7102152B2 (en) * | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
DE102004001823B3 (de) * | 2004-01-08 | 2005-09-01 | Humboldt-Universität Zu Berlin | Licht emittierende Halbleitervorrichtungen mit veränderbarer Emissionswellenlänge |
US7374807B2 (en) * | 2004-01-15 | 2008-05-20 | Nanosys, Inc. | Nanocrystal doped matrixes |
US7645397B2 (en) * | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
US20050156510A1 (en) * | 2004-01-21 | 2005-07-21 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials |
US20050167684A1 (en) * | 2004-01-21 | 2005-08-04 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based phosphor material |
DE102004053594A1 (de) * | 2004-01-21 | 2005-08-18 | Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto | Vorrichtung und Verfahren zum Emittieren von Ausgangslicht unter Verwendung eines Gruppe-IIB-Element-Selenid-basierten Phosphormaterials |
WO2005071039A1 (ja) * | 2004-01-26 | 2005-08-04 | Kyocera Corporation | 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
GB0404442D0 (en) * | 2004-02-27 | 2004-03-31 | Trackdale Ltd | Composite quantum dot structures |
US7253452B2 (en) | 2004-03-08 | 2007-08-07 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystal materials |
US7202943B2 (en) * | 2004-03-08 | 2007-04-10 | National Research Council Of Canada | Object identification using quantum dots fluorescence allocated on Fraunhofer solar spectral lines |
US20050199784A1 (en) * | 2004-03-11 | 2005-09-15 | Rizal Jaffar | Light to PWM converter |
US20050230673A1 (en) * | 2004-03-25 | 2005-10-20 | Mueller Alexander H | Colloidal quantum dot light emitting diodes |
CN1938396A (zh) * | 2004-03-30 | 2007-03-28 | 出光兴产株式会社 | 荧光变换介质及彩色发光装置 |
US7742322B2 (en) | 2005-01-07 | 2010-06-22 | Invisage Technologies, Inc. | Electronic and optoelectronic devices with quantum dot films |
US7773404B2 (en) | 2005-01-07 | 2010-08-10 | Invisage Technologies, Inc. | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
WO2005101530A1 (en) * | 2004-04-19 | 2005-10-27 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
US7746681B2 (en) | 2005-01-07 | 2010-06-29 | Invisage Technologies, Inc. | Methods of making quantum dot films |
WO2005106966A1 (en) * | 2004-04-30 | 2005-11-10 | Unisearch Limited | Artificial amorphous semiconductors and applications to solar cells |
GB0409877D0 (en) * | 2004-04-30 | 2004-06-09 | Univ Manchester | Preparation of nanoparticle materials |
US20050253502A1 (en) * | 2004-05-12 | 2005-11-17 | Matsushita Electric Works, Ltd. | Optically enhanced nanomaterials |
US7235792B2 (en) | 2004-05-19 | 2007-06-26 | Carl Scott Elofson | Color-tuned volumetric light using high quantum yield nanocrystals |
CA2567611A1 (en) * | 2004-05-28 | 2005-12-08 | Tir Systems Ltd. | Luminance enhancement apparatus and method |
US7112455B2 (en) | 2004-06-10 | 2006-09-26 | Freescale Semiconductor, Inc | Semiconductor optical devices and method for forming |
US7204631B2 (en) * | 2004-06-30 | 2007-04-17 | 3M Innovative Properties Company | Phosphor based illumination system having a plurality of light guides and an interference reflector |
US7204630B2 (en) * | 2004-06-30 | 2007-04-17 | 3M Innovative Properties Company | Phosphor based illumination system having a plurality of light guides and an interference reflector |
US7213958B2 (en) * | 2004-06-30 | 2007-05-08 | 3M Innovative Properties Company | Phosphor based illumination system having light guide and an interference reflector |
US7255469B2 (en) * | 2004-06-30 | 2007-08-14 | 3M Innovative Properties Company | Phosphor based illumination system having a light guide and an interference reflector |
US7182498B2 (en) * | 2004-06-30 | 2007-02-27 | 3M Innovative Properties Company | Phosphor based illumination system having a plurality of light guides and an interference reflector |
US20060002108A1 (en) * | 2004-06-30 | 2006-01-05 | Ouderkirk Andrew J | Phosphor based illumination system having a short pass reflector and method of making same |
US20070045777A1 (en) * | 2004-07-08 | 2007-03-01 | Jennifer Gillies | Micronized semiconductor nanocrystal complexes and methods of making and using same |
CN1977568A (zh) * | 2004-07-15 | 2007-06-06 | 出光兴产株式会社 | 有机el显示装置 |
US7229690B2 (en) * | 2004-07-26 | 2007-06-12 | Massachusetts Institute Of Technology | Microspheres including nanoparticles |
US7557028B1 (en) | 2004-07-28 | 2009-07-07 | Nanosys, Inc. | Process for group III-V semiconductor nanostructure synthesis and compositions made using same |
US7750352B2 (en) | 2004-08-10 | 2010-07-06 | Pinion Technologies, Inc. | Light strips for lighting and backlighting applications |
JP2008510852A (ja) * | 2004-08-17 | 2008-04-10 | インヴィトロジェン コーポレーション | 高発光性コロイド粒子の合成 |
US7235190B1 (en) | 2004-09-02 | 2007-06-26 | Sandia Corporation | Nanocluster-based white-light-emitting material employing surface tuning |
US7256057B2 (en) * | 2004-09-11 | 2007-08-14 | 3M Innovative Properties Company | Methods for producing phosphor based light sources |
JP2006083219A (ja) | 2004-09-14 | 2006-03-30 | Sharp Corp | 蛍光体およびこれを用いた発光装置 |
JP4785363B2 (ja) * | 2004-09-15 | 2011-10-05 | シャープ株式会社 | 蛍光体粒子、蛍光体粒子分散体ならびにこれらを含む照明装置および表示装置 |
TWI256149B (en) * | 2004-09-27 | 2006-06-01 | Advanced Optoelectronic Tech | Light apparatus having adjustable color light and manufacturing method thereof |
US7265488B2 (en) * | 2004-09-30 | 2007-09-04 | Avago Technologies General Ip Pte. Ltd | Light source with wavelength converting material |
US7347049B2 (en) * | 2004-10-19 | 2008-03-25 | General Electric Company | Method and system for thermochemical heat energy storage and recovery |
US20060196375A1 (en) * | 2004-10-22 | 2006-09-07 | Seth Coe-Sullivan | Method and system for transferring a patterned material |
CN1321466C (zh) * | 2004-10-26 | 2007-06-13 | 中国科学院长春应用化学研究所 | 两相热法合成硫化镉量子点 |
US20060091411A1 (en) * | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | High brightness LED package |
US7329982B2 (en) * | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | LED package with non-bonded optical element |
US20060091414A1 (en) * | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | LED package with front surface heat extractor |
US7304425B2 (en) * | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
US7799422B2 (en) * | 2004-11-03 | 2010-09-21 | Massachusetts Institute Of Technology | Absorbing film |
WO2006137924A2 (en) | 2004-11-03 | 2006-12-28 | Massachusetts Institute Of Technology | Light emitting device |
US20060240590A1 (en) * | 2004-11-09 | 2006-10-26 | The Research Foundation Of State University Of New York | Controlled synthesis of nanowires, nanodiscs, and nanostructured materials using liquid crystalline templates |
WO2006073562A2 (en) * | 2004-11-17 | 2006-07-13 | Nanosys, Inc. | Photoactive devices and components with enhanced efficiency |
KR100862455B1 (ko) | 2004-11-25 | 2008-10-08 | 삼성전기주식회사 | 나노크리스털을 이용한 발광 다이오드 및 그 제조 방법 |
US20060113895A1 (en) * | 2004-11-30 | 2006-06-01 | Baroky Tajul A | Light emitting device with multiple layers of quantum dots and method for making the device |
US8891575B2 (en) * | 2004-11-30 | 2014-11-18 | Massachusetts Institute Of Technology | Optical feedback structures and methods of making |
US20060148103A1 (en) * | 2004-12-30 | 2006-07-06 | Yin-Peng Chen | Highly sensitive biological assays |
CA2519608A1 (en) | 2005-01-07 | 2006-07-07 | Edward Sargent | Quantum dot-polymer nanocomposite photodetectors and photovoltaics |
KR100678285B1 (ko) * | 2005-01-20 | 2007-02-02 | 삼성전자주식회사 | 발광 다이오드용 양자점 형광체 및 그의 제조방법 |
US7602116B2 (en) * | 2005-01-27 | 2009-10-13 | Advanced Optoelectronic Technology, Inc. | Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof |
KR100682928B1 (ko) * | 2005-02-03 | 2007-02-15 | 삼성전자주식회사 | 양자점 화합물을 포함하는 에너지 변환막 및 양자점 박막 |
US7811479B2 (en) * | 2005-02-07 | 2010-10-12 | The Trustees Of The University Of Pennsylvania | Polymer-nanocrystal quantum dot composites and optoelectronic devices |
US7522211B2 (en) * | 2005-02-10 | 2009-04-21 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Studio light |
KR100668328B1 (ko) * | 2005-02-15 | 2007-01-12 | 삼성전자주식회사 | 양자점 수직공진형 표면방출 레이저 및 그 제조방법 |
JP4604246B2 (ja) * | 2005-03-10 | 2011-01-05 | 独立行政法人産業技術総合研究所 | 高濃度に半導体ナノ粒子が分散した蛍光体及びその製造方法 |
US8748923B2 (en) | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US7608237B2 (en) * | 2005-03-28 | 2009-10-27 | The Research Foundation Of State University Of New York | Synthesis of nanostructured materials using liquid crystalline templates |
US7482608B2 (en) * | 2005-04-20 | 2009-01-27 | Iso-Science Laboratories, Inc. | Nuclear powered quantum dot light source |
DE102005019376A1 (de) * | 2005-04-26 | 2006-11-02 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Lumineszenzkonversions-LED |
JP2006309238A (ja) * | 2005-04-27 | 2006-11-09 | Samsung Electronics Co Ltd | 光ルミネセンス液晶ディスプレイ |
KR100682874B1 (ko) * | 2005-05-02 | 2007-02-15 | 삼성전기주식회사 | 백색 led |
US8084001B2 (en) | 2005-05-02 | 2011-12-27 | Cornell Research Foundation, Inc. | Photoluminescent silica-based sensors and methods of use |
KR101111747B1 (ko) | 2005-05-16 | 2012-06-12 | 삼성엘이디 주식회사 | 혼합 나노 입자 및 이를 이용한 전자소자 |
WO2007103310A2 (en) | 2006-03-07 | 2007-09-13 | Qd Vision, Inc. | An article including semiconductor nanocrystals |
US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9297092B2 (en) | 2005-06-05 | 2016-03-29 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
KR101266130B1 (ko) * | 2005-06-23 | 2013-05-27 | 렌슬러 폴리테크닉 인스티튜트 | 단파장 led들 및 다운-컨버젼 물질들로 백색광을생성하기 위한 패키지 설계 |
DE102005061828B4 (de) * | 2005-06-23 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Wellenlängenkonvertierendes Konvertermaterial, lichtabstrahlendes optisches Bauelement und Verfahren zu dessen Herstellung |
US20070001581A1 (en) * | 2005-06-29 | 2007-01-04 | Stasiak James W | Nanostructure based light emitting devices and associated methods |
KR101106134B1 (ko) * | 2005-07-11 | 2012-01-20 | 서울옵토디바이스주식회사 | 나노와이어 형광체를 채택한 발광소자 |
US20070012355A1 (en) * | 2005-07-12 | 2007-01-18 | Locascio Michael | Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material |
WO2007009010A2 (en) * | 2005-07-13 | 2007-01-18 | Evident Technologies, Inc. | Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors |
CA2615134A1 (en) | 2005-07-13 | 2007-01-18 | Evident Technologies, Inc. | Light emitting diode comprising semiconductor nanocrystal complexes |
US7495383B2 (en) * | 2005-08-01 | 2009-02-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Phosphor based on a combination of quantum dot and conventional phosphors |
GB2472541B (en) | 2005-08-12 | 2011-03-23 | Nanoco Technologies Ltd | Nanoparticles |
US7358101B2 (en) * | 2005-09-06 | 2008-04-15 | Institute Of Nuclear Energy Research | Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots |
CN100503774C (zh) * | 2005-10-21 | 2009-06-24 | 中国科学院上海应用物理研究所 | 硫化镉裸量子点及其制备方法 |
GB0522027D0 (en) * | 2005-10-28 | 2005-12-07 | Nanoco Technologies Ltd | Controlled preparation of nanoparticle materials |
US7518160B2 (en) | 2005-10-31 | 2009-04-14 | Kyocera Corporation | Wavelength converter, lighting system, and lighting system assembly |
US7581696B2 (en) * | 2005-11-09 | 2009-09-01 | Morgan Aircraft, Llc | Aircraft attitude control configuration |
JP2007157831A (ja) * | 2005-12-01 | 2007-06-21 | Sharp Corp | 発光装置 |
WO2007067257A2 (en) | 2005-12-02 | 2007-06-14 | Vanderbilt University | Broad-emission nanocrystals and methods of making and using same |
WO2007077869A1 (ja) | 2006-01-04 | 2007-07-12 | Rohm Co., Ltd. | 薄型発光ダイオードランプとその製造方法 |
US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
KR101249078B1 (ko) * | 2006-01-20 | 2013-03-29 | 삼성전기주식회사 | 실록산계 분산제 및 이를 포함하는 나노입자 페이스트조성물 |
JP2009524247A (ja) * | 2006-01-20 | 2009-06-25 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | ルミファー膜を空間的に分離することにより固体光発光素子におけるスペクトル内容をシフトすること |
KR100745745B1 (ko) * | 2006-02-21 | 2007-08-02 | 삼성전기주식회사 | 나노복합재료 및 그 제조방법 |
US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
US8849087B2 (en) | 2006-03-07 | 2014-09-30 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9951438B2 (en) | 2006-03-07 | 2018-04-24 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
WO2007143197A2 (en) | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
WO2007117698A2 (en) | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Composition including material, methods of depositing material, articles including same and systems for depositing material |
KR100783251B1 (ko) * | 2006-04-10 | 2007-12-06 | 삼성전기주식회사 | 양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법 |
KR101278768B1 (ko) * | 2006-04-13 | 2013-06-25 | 삼성전자주식회사 | 전계 발광소자 및 이를 포함하는 전자장치 |
US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
US20070257271A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with encapsulated converging optical element |
US20070257270A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with wedge-shaped optical element |
CN101506934A (zh) | 2006-05-02 | 2009-08-12 | 舒伯布尔斯公司 | 塑料led灯泡 |
US7953293B2 (en) * | 2006-05-02 | 2011-05-31 | Ati Technologies Ulc | Field sequence detector, method and video device |
MX2008013868A (es) | 2006-05-02 | 2009-02-03 | Superbulbs Inc | Metodo de dispersion de luz y difraccion preferencial de ciertas longitudes de onda de luz para diodos emisores de luz y bulbos construidos a partir de los mismos. |
US7390117B2 (en) * | 2006-05-02 | 2008-06-24 | 3M Innovative Properties Company | LED package with compound converging optical element |
US20070258241A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with non-bonded converging optical element |
US7525126B2 (en) | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
US8941293B2 (en) | 2006-05-11 | 2015-01-27 | Samsung Electronics Co., Ltd. | Solid state lighting devices comprising quantum dots |
US20080173886A1 (en) * | 2006-05-11 | 2008-07-24 | Evident Technologies, Inc. | Solid state lighting devices comprising quantum dots |
US20070262294A1 (en) * | 2006-05-15 | 2007-11-15 | X-Rite, Incorporated | Light source including quantum dot material and apparatus including same |
US20070262714A1 (en) * | 2006-05-15 | 2007-11-15 | X-Rite, Incorporated | Illumination source including photoluminescent material and a filter, and an apparatus including same |
KR20070110995A (ko) * | 2006-05-16 | 2007-11-21 | 삼성전자주식회사 | 반도체 나노결정-금속 복합체 및 그의 제조방법 |
US8941299B2 (en) * | 2006-05-21 | 2015-01-27 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
CN101490615A (zh) * | 2006-05-21 | 2009-07-22 | 麻省理工学院 | 包括纳米晶体的光学结构 |
WO2007143227A2 (en) * | 2006-06-10 | 2007-12-13 | Qd Vision, Inc. | Materials,thin films,optical filters, and devices including same |
US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
US8188494B2 (en) * | 2006-06-28 | 2012-05-29 | Hewlett-Packard Development Company, L.P. | Utilizing nanowire for generating white light |
CN100413938C (zh) * | 2006-07-07 | 2008-08-27 | 中国科学技术大学 | Au/CdSe异质结构量子点及其制备方法 |
US8884511B2 (en) * | 2006-07-10 | 2014-11-11 | Hewlett-Packard Development Company, L.P. | Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions |
GB2439973A (en) * | 2006-07-13 | 2008-01-16 | Sharp Kk | Modifying the optical properties of a nitride optoelectronic device |
KR100901947B1 (ko) * | 2006-07-14 | 2009-06-10 | 삼성전자주식회사 | 반도체 나노결정을 이용하는 백색 발광 다이오드 및 그의제조방법 |
WO2008011377A2 (en) * | 2006-07-17 | 2008-01-24 | 3M Innovative Properties Company | Led package with converging extractor |
US8643058B2 (en) | 2006-07-31 | 2014-02-04 | Massachusetts Institute Of Technology | Electro-optical device including nanocrystals |
JP2008041361A (ja) | 2006-08-03 | 2008-02-21 | Idemitsu Kosan Co Ltd | 蛍光変換媒体及びそれを含むカラー発光装置 |
WO2008018003A2 (en) * | 2006-08-08 | 2008-02-14 | Koninklijke Philips Electronics N.V. | Nanoparticle based inorganic bonding material |
WO2008021962A2 (en) | 2006-08-11 | 2008-02-21 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystals and devices |
KR101290251B1 (ko) * | 2006-08-21 | 2013-07-30 | 삼성전자주식회사 | 복합 발광 재료 및 그를 포함하는 발광 소자 |
KR20090086942A (ko) * | 2006-09-08 | 2009-08-14 | 에이전시 포 사이언스, 테크놀로지 앤드 리서치 | 가변 파장 발광 다이오드 |
WO2008085210A2 (en) | 2006-09-12 | 2008-07-17 | Qd Vision, Inc. | Electroluminescent display useful for displaying a predetermined pattern |
WO2008033388A2 (en) | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
JP2010506402A (ja) | 2006-10-02 | 2010-02-25 | イルミテックス, インコーポレイテッド | Ledのシステムおよび方法 |
US7816669B1 (en) * | 2006-10-13 | 2010-10-19 | Hewlett-Packard Development Company, L.P. | Light emitting system and methods for controlling nanocrystal distribution therein |
JP4349456B2 (ja) | 2006-10-23 | 2009-10-21 | ソニー株式会社 | 固体撮像素子 |
BRPI0718085A2 (pt) * | 2006-10-31 | 2013-11-05 | Tir Technology Lp | Fonte de luz |
US7737636B2 (en) * | 2006-11-09 | 2010-06-15 | Intematix Corporation | LED assembly with an LED and adjacent lens and method of making same |
EP2092576A1 (en) * | 2006-11-17 | 2009-08-26 | 3M Innovative Properties Company | Optical bonding composition for led light source |
WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
WO2008133660A2 (en) | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
WO2008063658A2 (en) * | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US9441793B2 (en) | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
ES2360258T3 (es) * | 2006-12-06 | 2011-06-02 | Sunflake A/S | Dispositivo óptico. |
EP2109900A1 (en) * | 2007-01-08 | 2009-10-21 | Plextronics, Inc. | Quantum dot photovoltaic device |
US20080172197A1 (en) * | 2007-01-11 | 2008-07-17 | Motorola, Inc. | Single laser multi-color projection display with quantum dot screen |
US8836212B2 (en) | 2007-01-11 | 2014-09-16 | Qd Vision, Inc. | Light emissive printed article printed with quantum dot ink |
AU2008214359B2 (en) | 2007-02-05 | 2014-01-16 | Apellis Pharmaceuticals, Inc. | Local complement inhibition for treatment of complement-mediated disorders |
DE102007009530A1 (de) | 2007-02-27 | 2008-08-28 | Osram Opto Semiconductors Gmbh | OLED mit Farbkonversion |
CN101627482A (zh) * | 2007-03-08 | 2010-01-13 | 3M创新有限公司 | 发光元件阵列 |
WO2008112886A1 (en) * | 2007-03-13 | 2008-09-18 | Evident Technologies, Inc. | Infrared display with luminescent quantum dots |
WO2008121793A1 (en) * | 2007-03-30 | 2008-10-09 | The Penn State Research Foundation | Mist fabrication of quantum dot devices |
US8226263B2 (en) * | 2007-04-17 | 2012-07-24 | Koninklijke Philips Electronics N.V. | Illumination system |
US8563348B2 (en) * | 2007-04-18 | 2013-10-22 | Nanoco Technologies Ltd. | Fabrication of electrically active films based on multiple layers |
US20080264479A1 (en) | 2007-04-25 | 2008-10-30 | Nanoco Technologies Limited | Hybrid Photovoltaic Cells and Related Methods |
KR100900866B1 (ko) * | 2007-05-09 | 2009-06-04 | 삼성전자주식회사 | 나노결정-금속산화물 복합체를 이용하는 발광 다이오드소자 및 그의 제조방법 |
JP5230171B2 (ja) * | 2007-06-05 | 2013-07-10 | シャープ株式会社 | 発光装置、発光装置の製造方法、電子機器および携帯電話機 |
US20080317768A1 (en) | 2007-06-21 | 2008-12-25 | Boeing Company | Bioconjugated nanoparticles |
JP5773646B2 (ja) | 2007-06-25 | 2015-09-02 | キユーデイー・ビジヨン・インコーポレーテツド | ナノ材料を被着させることを含む組成物および方法 |
US9136498B2 (en) * | 2007-06-27 | 2015-09-15 | Qd Vision, Inc. | Apparatus and method for modulating photon output of a quantum dot light emitting device |
US20090002349A1 (en) * | 2007-06-28 | 2009-01-01 | Cok Ronald S | Electroluminescent white light emitting device |
TWI365546B (en) * | 2007-06-29 | 2012-06-01 | Ind Tech Res Inst | Light emitting diode device and fabrication method thereof |
US20090001403A1 (en) * | 2007-06-29 | 2009-01-01 | Motorola, Inc. | Inductively excited quantum dot light emitting device |
US7989153B2 (en) * | 2007-07-11 | 2011-08-02 | Qd Vision, Inc. | Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites |
KR101820777B1 (ko) * | 2007-07-18 | 2018-01-22 | 삼성전자주식회사 | 고체 조명에 유용한 양자점-기반 광 시트 |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
US7838889B2 (en) * | 2007-08-10 | 2010-11-23 | Eastman Kodak Company | Solid-state area illumination system |
US20090054752A1 (en) * | 2007-08-22 | 2009-02-26 | Motorola, Inc. | Method and apparatus for photoplethysmographic sensing |
US8128249B2 (en) * | 2007-08-28 | 2012-03-06 | Qd Vision, Inc. | Apparatus for selectively backlighting a material |
US20090071155A1 (en) * | 2007-09-14 | 2009-03-19 | General Electric Company | Method and system for thermochemical heat energy storage and recovery |
US20090074355A1 (en) * | 2007-09-17 | 2009-03-19 | Beausoleil Raymond G | Photonically-coupled nanoparticle quantum systems and methods for fabricating the same |
CN101896766B (zh) * | 2007-10-24 | 2014-04-23 | 开关电灯公司 | 用于发光二极管光源的散射器 |
US8784701B2 (en) | 2007-11-30 | 2014-07-22 | Nanoco Technologies Ltd. | Preparation of nanoparticle material |
JP5134618B2 (ja) * | 2007-12-18 | 2013-01-30 | Idec株式会社 | 波長変換器及び発光装置 |
US20090185113A1 (en) * | 2008-01-22 | 2009-07-23 | Industrial Technology Research Institute | Color Filter Module and Device of Having the Same |
KR101429704B1 (ko) * | 2008-01-31 | 2014-08-12 | 삼성디스플레이 주식회사 | 파장변환 부재, 이를 포함하는 광원 어셈블리 및 액정 표시장치 |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
KR101690210B1 (ko) * | 2008-02-25 | 2016-12-27 | 나노코 테크놀로지스 리미티드 | 반도체 나노입자 캐핑물질 |
KR101442146B1 (ko) * | 2008-02-25 | 2014-09-23 | 삼성디스플레이 주식회사 | 광원 유닛, 이를 포함하는 액정 표시 장치 및 이의 제조방법 |
WO2009145813A1 (en) | 2008-03-04 | 2009-12-03 | Qd Vision, Inc. | Particles including nanoparticles, uses thereof, and methods |
JP4911082B2 (ja) * | 2008-03-10 | 2012-04-04 | ソニー株式会社 | 表示装置および照明装置 |
US8376801B2 (en) * | 2008-03-13 | 2013-02-19 | Nxp B.V. | Luminescent component and manufacturing method |
CN100559168C (zh) * | 2008-04-02 | 2009-11-11 | 中国科学院上海技术物理研究所 | 一种利用荧光光谱测量半导体量子点尺寸分布的方法 |
CN105870345B (zh) | 2008-04-03 | 2019-01-01 | 三星研究美国股份有限公司 | 包括量子点的发光器件 |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
US20090268461A1 (en) * | 2008-04-28 | 2009-10-29 | Deak David G | Photon energy conversion structure |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
JP2011524064A (ja) | 2008-05-06 | 2011-08-25 | キユーデイー・ビジヨン・インコーポレーテツド | 量子閉じ込め半導体ナノ粒子を含有する固体照明装置 |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
US8076833B2 (en) * | 2008-06-30 | 2011-12-13 | Bridgelux, Inc. | Methods and apparatuses for enhancing heat dissipation from a light emitting device |
JP4805980B2 (ja) * | 2008-07-07 | 2011-11-02 | シャープ株式会社 | 発光装置及び蛍光体 |
US7888855B2 (en) * | 2008-07-16 | 2011-02-15 | Los Alamos National Security, Llc | Mixed semiconductor nanocrystal compositions |
GB0813273D0 (en) * | 2008-07-19 | 2008-08-27 | Nanoco Technologies Ltd | Method for producing aqueous compatible nanoparticles |
GB0814458D0 (en) * | 2008-08-07 | 2008-09-10 | Nanoco Technologies Ltd | Surface functionalised nanoparticles |
US8471445B2 (en) * | 2008-08-18 | 2013-06-25 | Switch Bulb Company, Inc. | Anti-reflective coatings for light bulbs |
KR100982990B1 (ko) * | 2008-09-03 | 2010-09-17 | 삼성엘이디 주식회사 | 파장변환플레이트 및 이를 이용한 발광장치 |
KR100982991B1 (ko) * | 2008-09-03 | 2010-09-17 | 삼성엘이디 주식회사 | 양자점 파장변환체, 양자점 파장변환체의 제조방법 및 양자점 파장변환체를 포함하는 발광장치 |
US8412053B2 (en) * | 2008-10-07 | 2013-04-02 | The Boeing Company | Radioisotope powered light modulating communication devices |
KR101018111B1 (ko) * | 2008-10-07 | 2011-02-25 | 삼성엘이디 주식회사 | 양자점-금속산화물 복합체, 양자점-금속산화물 복합체의 제조방법 및 양자점-금속산화물 복합체를 포함하는 발광장치 |
US20100135009A1 (en) * | 2008-10-15 | 2010-06-03 | David Duncan | Custom color led replacements for traditional lighting fixtures |
US8634444B2 (en) * | 2008-10-16 | 2014-01-21 | The Boeing Company | Self-contained random scattering laser devices |
GB0820101D0 (en) * | 2008-11-04 | 2008-12-10 | Nanoco Technologies Ltd | Surface functionalised nanoparticles |
JP2012508464A (ja) * | 2008-11-07 | 2012-04-05 | アイディディ エアロスペイス コーポレイション | 照明システム |
US8164150B1 (en) | 2008-11-10 | 2012-04-24 | The Boeing Company | Quantum dot illumination devices and methods of use |
GB0821122D0 (en) * | 2008-11-19 | 2008-12-24 | Nanoco Technologies Ltd | Semiconductor nanoparticle - based light emitting devices and associated materials and methods |
US8360617B2 (en) * | 2008-11-25 | 2013-01-29 | Samsung Electronics Co., Ltd. | Lighting system including LED with glass-coated quantum-dots |
JP5483669B2 (ja) * | 2008-11-26 | 2014-05-07 | 昭和電工株式会社 | 液状硬化性樹脂組成物、ナノ粒子蛍光体を含む硬化樹脂の製造方法、発光装置の製造方法、発光装置及び照明装置 |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US7916065B1 (en) | 2008-12-12 | 2011-03-29 | Raytheon Company | Countermeasure system and method using quantum dots |
KR101462656B1 (ko) * | 2008-12-16 | 2014-11-17 | 삼성전자 주식회사 | 나노입자/블록공중합체 복합체의 제조방법 |
US8153984B2 (en) * | 2008-12-18 | 2012-04-10 | Eastman Kodak Company | Security system with different size emissive particles |
US10214686B2 (en) | 2008-12-30 | 2019-02-26 | Nanosys, Inc. | Methods for encapsulating nanocrystals and resulting compositions |
US11198270B2 (en) | 2008-12-30 | 2021-12-14 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
US8343575B2 (en) | 2008-12-30 | 2013-01-01 | Nanosys, Inc. | Methods for encapsulating nanocrystals and resulting compositions |
CN101477982B (zh) * | 2009-01-07 | 2011-08-17 | 苏州晶方半导体科技股份有限公司 | 光转换器及其制造方法和发光二极管 |
US20100314926A1 (en) * | 2009-01-09 | 2010-12-16 | Chesness Curtis J | Collapsible swivel chair |
US8111385B2 (en) * | 2009-01-26 | 2012-02-07 | The Boeing Company | Quantum dot-mediated optical fiber information retrieval systems and methods of use |
KR101631986B1 (ko) * | 2009-02-18 | 2016-06-21 | 삼성전자주식회사 | 도광판 및 이를 포함하는 디스플레이 장치 |
KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
EP2424814A4 (en) | 2009-04-28 | 2016-06-01 | Qd Vision Inc | OPTICAL MATERIALS, OPTICAL COMPONENTS AND METHOD |
WO2010126606A2 (en) | 2009-05-01 | 2010-11-04 | Nanosys, Inc. | Functionalized matrixes for dispersion of nanostructures |
US8337030B2 (en) | 2009-05-13 | 2012-12-25 | Cree, Inc. | Solid state lighting devices having remote luminescent material-containing element, and lighting methods |
KR101644047B1 (ko) * | 2009-07-09 | 2016-08-01 | 삼성전자 주식회사 | 발광체-고분자 복합체용 조성물, 발광체-고분자 복합체 및 상기 발광체-고분자 복합체를 포함하는 발광 소자 |
US8350223B2 (en) * | 2009-07-31 | 2013-01-08 | Raytheon Company | Quantum dot based radiation source and radiometric calibrator using the same |
US9380665B2 (en) | 2009-08-14 | 2016-06-28 | Once Innovations, Inc. | Spectral shift control for dimmable AC LED lighting |
EP2465147B1 (en) | 2009-08-14 | 2019-02-27 | Samsung Electronics Co., Ltd. | Lighting devices, an optical component for a lighting device, and methods |
US8373363B2 (en) | 2009-08-14 | 2013-02-12 | Once Innovations, Inc. | Reduction of harmonic distortion for LED loads |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
WO2011031871A1 (en) | 2009-09-09 | 2011-03-17 | Qd Vision, Inc. | Particles including nanoparticles, uses thereof, and methods |
WO2011031876A1 (en) | 2009-09-09 | 2011-03-17 | Qd Vision, Inc. | Formulations including nanoparticles |
US9502612B2 (en) | 2009-09-20 | 2016-11-22 | Viagan Ltd. | Light emitting diode package with enhanced heat conduction |
GB0916699D0 (en) | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
GB0916700D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
JP2013508895A (ja) | 2009-10-17 | 2013-03-07 | キユーデイー・ビジヨン・インコーポレーテツド | 光学部品、これを含む製品およびこれを作製する方法 |
EP3927120A1 (en) | 2009-10-29 | 2021-12-22 | Signify North America Corporation | Led lighting for livestock development |
CN102695500A (zh) | 2009-11-09 | 2012-09-26 | 聚光灯技术合伙有限责任公司 | 多糖基水凝胶 |
AU2010314994B2 (en) | 2009-11-09 | 2016-10-06 | Spotlight Technology Partners Llc | Fragmented hydrogels |
CA2781043A1 (en) * | 2009-11-16 | 2011-05-19 | Emory University | Lattice-mismatched core-shell quantum dots |
KR101489390B1 (ko) | 2009-12-15 | 2015-02-03 | 엘지이노텍 주식회사 | 양자점을 이용한 백라이트 유닛 |
TWI398700B (zh) * | 2009-12-30 | 2013-06-11 | Au Optronics Corp | 使用量子點螢光粉之顯示裝置及其製造方法 |
KR101519509B1 (ko) | 2010-01-28 | 2015-05-12 | 이섬 리서치 디벨러프먼트 컴파니 오브 더 히브루 유니버시티 오브 예루살렘 엘티디. | 형광체-나노입자 조합물 |
KR100969100B1 (ko) | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
EP2537053B1 (en) | 2010-02-19 | 2016-11-02 | Pacific Biosciences of California, Inc. | An analytical device comprising an optode array chip |
JP4949525B2 (ja) | 2010-03-03 | 2012-06-13 | シャープ株式会社 | 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法 |
US8530883B2 (en) * | 2010-03-11 | 2013-09-10 | Light-Based Technologies Incorporated | Manufacture of quantum dot-enabled solid-state light emitters |
WO2011116251A1 (en) * | 2010-03-17 | 2011-09-22 | Once Innovations, Inc. | Light sources adapted to spectral sensitivity of diurnal avians and humans |
US9482397B2 (en) | 2010-03-17 | 2016-11-01 | Once Innovations, Inc. | Light sources adapted to spectral sensitivity of diurnal avians and humans |
KR101744904B1 (ko) | 2010-03-22 | 2017-06-21 | 삼성디스플레이 주식회사 | 양자점-블록공중합체 하이브리드 및 이의 제조 방법과 분산 방법, 그리고 양자점 블록공중합체 하이브리드를 포함하는 발광 소자 및 이의 제조 방법 |
KR20110108954A (ko) * | 2010-03-30 | 2011-10-06 | 삼성전자주식회사 | 반도체 나노 결정 및 그 제조 방법 |
KR101683270B1 (ko) | 2010-03-31 | 2016-12-21 | 삼성전자 주식회사 | 백색 발광 다이오드를 포함하는 액정 디스플레이 장치 |
GB201005601D0 (en) | 2010-04-01 | 2010-05-19 | Nanoco Technologies Ltd | Ecapsulated nanoparticles |
US8983039B2 (en) | 2010-05-05 | 2015-03-17 | Suinno Oy | Caller ID surfing |
US9382470B2 (en) | 2010-07-01 | 2016-07-05 | Samsung Electronics Co., Ltd. | Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same |
US20120001217A1 (en) * | 2010-07-01 | 2012-01-05 | Samsung Electronics Co., Ltd. | Composition for light-emitting particle-polymer composite, light-emitting particle-polymer composite, and device including the light-emitting particle-polymer composite |
US8702277B2 (en) | 2010-07-12 | 2014-04-22 | Samsung Electronics Co., Ltd. | White light emitting diode and liquid crystal display including the same |
US8735791B2 (en) | 2010-07-13 | 2014-05-27 | Svv Technology Innovations, Inc. | Light harvesting system employing microstructures for efficient light trapping |
JP2012036265A (ja) * | 2010-08-05 | 2012-02-23 | Sharp Corp | 照明装置 |
US20120113671A1 (en) * | 2010-08-11 | 2012-05-10 | Sridhar Sadasivan | Quantum dot based lighting |
US9614129B2 (en) * | 2010-08-14 | 2017-04-04 | Seoul Semiconductor Co., Ltd. | Light emitting device having surface-modified luminophores |
TW201214767A (en) * | 2010-09-27 | 2012-04-01 | Univ Chung Yuan Christian | White light emitting diode |
US9648673B2 (en) | 2010-11-05 | 2017-05-09 | Cree, Inc. | Lighting device with spatially segregated primary and secondary emitters |
KR20200039806A (ko) | 2010-11-10 | 2020-04-16 | 나노시스, 인크. | 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들 |
KR101295119B1 (ko) * | 2010-11-10 | 2013-08-12 | 삼성전자주식회사 | 발광모듈 |
US20150188002A1 (en) * | 2010-11-11 | 2015-07-02 | Auterra, Inc. | Light emitting devices having rare earth and transition metal activated phosphors and applications thereof |
TWI493756B (zh) * | 2010-11-15 | 2015-07-21 | Epistar Corp | 發光元件 |
KR20120054484A (ko) * | 2010-11-19 | 2012-05-30 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이의 제조방법 |
ES2460876T3 (es) * | 2010-12-21 | 2014-05-14 | Valoya Oy | Procedimiento y medios para la aclimatación de plantones a la vida en el exterior |
EP2655961A4 (en) | 2010-12-23 | 2014-09-03 | Qd Vision Inc | OPTICAL ELEMENT CONTAINING QUANTUM POINTS |
US8474916B2 (en) | 2011-01-14 | 2013-07-02 | Smithworks, Inc. | Selectively configurable chair system |
US8324815B2 (en) * | 2011-01-24 | 2012-12-04 | Biological Illumination, Llc | LED lighting system |
JP5937521B2 (ja) * | 2011-01-28 | 2016-06-22 | 昭和電工株式会社 | 量子ドット蛍光体を含む組成物、量子ドット蛍光体分散樹脂成形体、量子ドット蛍光体を含む構造物、発光装置、電子機器、機械装置及び量子ドット蛍光体分散樹脂成形体の製造方法 |
JP5827578B2 (ja) * | 2011-02-14 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 光学素子の作製方法 |
US8742654B2 (en) * | 2011-02-25 | 2014-06-03 | Cree, Inc. | Solid state light emitting devices including nonhomogeneous luminophoric particle size layers |
US8952405B2 (en) * | 2011-03-06 | 2015-02-10 | Mordehai MARGALIT | Light emitting diode package and method of manufacture |
EP2500951A1 (en) * | 2011-03-17 | 2012-09-19 | Valoya Oy | Plant illumination device and method |
AU2015213403B2 (en) * | 2011-03-17 | 2017-04-13 | Valoya Oy | Plant illumination device and method for dark growth chambers |
EP3165082B1 (en) | 2011-03-17 | 2021-09-08 | Valoya Oy | Plant illumination device and method for dark growth chambers |
EP2499900A1 (en) * | 2011-03-17 | 2012-09-19 | Valoya Oy | Method and means for enhancing greenhouse lights |
KR101822537B1 (ko) | 2011-03-31 | 2018-01-29 | 삼성디스플레이 주식회사 | 발광 다이오드 패키지, 이의 제조 방법, 및 이를 갖는 표시 장치 |
WO2012135744A2 (en) | 2011-04-01 | 2012-10-04 | Kai Su | White light-emitting device |
US8957438B2 (en) | 2011-04-07 | 2015-02-17 | Cree, Inc. | Methods of fabricating light emitting devices including multiple sequenced luminophoric layers |
KR20120115896A (ko) * | 2011-04-11 | 2012-10-19 | 삼성디스플레이 주식회사 | 발광 유닛 및 이를 포함하는 표시 장치 |
US8508830B1 (en) | 2011-05-13 | 2013-08-13 | Google Inc. | Quantum dot near-to-eye display |
KR101273099B1 (ko) | 2011-05-24 | 2013-06-13 | 엘지이노텍 주식회사 | 광학 시트, 이를 포함하는 표시장치 및 이의 제조방법 |
EP2532224A1 (en) * | 2011-06-10 | 2012-12-12 | Valoya Oy | Method and means for improving plant productivity through enhancing insect pollination success in plant cultivation |
KR101771175B1 (ko) * | 2011-06-10 | 2017-09-06 | 삼성전자주식회사 | 광전자 소자 및 적층 구조 |
WO2012177793A1 (en) | 2011-06-20 | 2012-12-27 | Crystalplex Corporation | Quantum dot containing light module |
TWI442139B (zh) * | 2011-07-21 | 2014-06-21 | Au Optronics Corp | 液晶顯示裝置 |
TWI505515B (zh) * | 2011-08-19 | 2015-10-21 | Epistar Corp | 發光裝置及其製造方法 |
JP5699254B2 (ja) * | 2011-09-13 | 2015-04-08 | エンパイア テクノロジー ディベロップメント エルエルシー | ナノ吸着剤及びそれらの使用方法 |
CN102339937B (zh) * | 2011-09-26 | 2013-06-12 | 南京工业大学 | 一种利用量子点荧光粉制造的白光led及其制备方法 |
WO2013052541A2 (en) | 2011-10-04 | 2013-04-11 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Quantum dots, rods, wires, sheets, and ribbons, and uses thereof |
US9097826B2 (en) | 2011-10-08 | 2015-08-04 | Svv Technology Innovations, Inc. | Collimating illumination systems employing a waveguide |
KR20130046974A (ko) * | 2011-10-28 | 2013-05-08 | 엘지이노텍 주식회사 | 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법 |
US20130112942A1 (en) | 2011-11-09 | 2013-05-09 | Juanita Kurtin | Composite having semiconductor structures embedded in a matrix |
US20130112941A1 (en) | 2011-11-09 | 2013-05-09 | Juanita Kurtin | Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating |
CN102368583B (zh) * | 2011-11-15 | 2013-01-23 | 浙江工业大学 | 一种提高固体激光器泵浦利用效率的方法及其产品 |
US9864121B2 (en) | 2011-11-22 | 2018-01-09 | Samsung Electronics Co., Ltd. | Stress-resistant component for use with quantum dots |
TW201329205A (zh) * | 2011-11-30 | 2013-07-16 | Univ Washington Ct Commerciali | 表面鈍化之矽量子點螢光體 |
KR101575139B1 (ko) | 2011-12-09 | 2015-12-08 | 삼성전자주식회사 | 백라이트 유닛 및 이를 포함하는 액정 디스플레이 장치 |
CN102492068B (zh) * | 2011-12-09 | 2015-02-25 | 江苏康纳思光电科技有限公司 | 一种大分子单体修饰的量子点、制备方法及其应用 |
WO2013114254A2 (en) * | 2012-02-03 | 2013-08-08 | Koninklijke Philips N.V. | Novel materials and methods for dispersing nano particles in matrices with high quantum yields and stability |
KR101574842B1 (ko) * | 2012-03-16 | 2015-12-08 | 세종대학교산학협력단 | 양자점- 고분자 복합체 입자, 상기 복합체 입자를 포함하는 광학요소, 및 상기 광학요소의 제조방법 |
FR2988223B1 (fr) | 2012-03-19 | 2016-09-02 | Solarwell | Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs |
CN104302572B (zh) | 2012-03-19 | 2018-02-02 | 奈科斯多特股份公司 | 包含各向异性平胶体半导体纳米晶体的发光设备及其制造方法 |
US9362719B2 (en) | 2012-03-30 | 2016-06-07 | The Regents Of The University Of Michigan | GaN-based quantum dot visible laser |
KR101546937B1 (ko) | 2012-04-04 | 2015-08-25 | 삼성전자 주식회사 | 백라이트 유닛용 필름 및 이를 포함하는 백라이트 유닛과 액정 디스플레이 장치 |
JP5939004B2 (ja) | 2012-04-11 | 2016-06-22 | ソニー株式会社 | 発光装置、表示装置および照明装置 |
JP6192897B2 (ja) | 2012-04-11 | 2017-09-06 | サターン ライセンシング エルエルシーSaturn Licensing LLC | 発光装置、表示装置および照明装置 |
JP6285908B2 (ja) * | 2012-04-13 | 2018-02-28 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 光変換アセンブリ、ランプ及び照明器具 |
CN103375708B (zh) * | 2012-04-26 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
US9929325B2 (en) | 2012-06-05 | 2018-03-27 | Samsung Electronics Co., Ltd. | Lighting device including quantum dots |
US9024526B1 (en) | 2012-06-11 | 2015-05-05 | Imaging Systems Technology, Inc. | Detector element with antenna |
US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
US9685585B2 (en) * | 2012-06-25 | 2017-06-20 | Cree, Inc. | Quantum dot narrow-band downconverters for high efficiency LEDs |
TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
WO2014018021A1 (en) | 2012-07-24 | 2014-01-30 | Empire Technology Development Llc | Solution phase polydiacetylene synthesis by alkyne metathesis |
KR20140025161A (ko) * | 2012-08-21 | 2014-03-04 | 삼성전자주식회사 | 양자점 소자 제조 방법, 이에 의해 제조된 양자점 소자 및 양자점 소자의 전하 이동도 측정 방법 |
JP2014056896A (ja) * | 2012-09-11 | 2014-03-27 | Ns Materials Kk | 半導体を利用した発光デバイス及びその製造方法 |
CN104735975B (zh) * | 2012-09-21 | 2018-01-16 | 万斯创新公司 | 适用于昼行性禽类和人类的光谱灵敏度的光源 |
DE102012109217A1 (de) * | 2012-09-28 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Beleuchtungsvorrichtung zum Erzeugen einer Lichtemission und Verfahren zum Erzeugen einer Lichtemission |
US8889457B2 (en) | 2012-12-13 | 2014-11-18 | Pacific Light Technologies Corp. | Composition having dispersion of nano-particles therein and methods of fabricating same |
US8900897B2 (en) * | 2013-01-10 | 2014-12-02 | Intermolecular, Inc. | Material with tunable index of refraction |
BR112015016408B1 (pt) * | 2013-01-11 | 2020-11-10 | Philips Lighting Holding B.V. | dispositivo de iluminação de horticultura; método para estimular o crescimento vegetal e biorritmo de uma planta; luminária; e aplicação de horticultura |
WO2014124040A1 (en) * | 2013-02-08 | 2014-08-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Coatings of semiconductor quantum dots for improved visibility of electrodes and pipettes |
WO2014132726A1 (ja) * | 2013-02-28 | 2014-09-04 | Nsマテリアルズ株式会社 | 液晶表示装置 |
US9142732B2 (en) | 2013-03-04 | 2015-09-22 | Osram Sylvania Inc. | LED lamp with quantum dots layer |
US9260655B2 (en) | 2013-03-14 | 2016-02-16 | Nanosys, Inc. | Alkyl-acid ligands for nanocrystals |
JP6250785B2 (ja) | 2013-03-14 | 2017-12-20 | ナノシス・インク. | 無溶媒量子ドット交換方法 |
KR102204761B1 (ko) | 2013-03-14 | 2021-01-18 | 나노시스, 인크. | 다면체 올리고머 실세스퀴옥산 나노결정 안정화 리간드 |
KR20140113046A (ko) | 2013-03-15 | 2014-09-24 | 삼성디스플레이 주식회사 | 표시 장치 |
EP2984686B1 (en) * | 2013-04-08 | 2020-07-08 | Lumileds Holding B.V. | Method of fabricating led with high thermal conductivity particles in phosphor conversion layer |
US9786823B2 (en) | 2013-07-08 | 2017-10-10 | Ns Materials Inc. | Light-emitting device with sealing member comprising zinc sulfide particles |
KR102075713B1 (ko) * | 2013-07-15 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
WO2015017655A1 (en) | 2013-08-02 | 2015-02-05 | Once Innovations, Inc. | System and method of illuminating livestock |
KR102108994B1 (ko) * | 2013-08-30 | 2020-05-12 | 삼성전자주식회사 | 광 변환 소자 및 그 제조 방법, 그리고 이를 포함하는 광원 유닛 |
US11746290B2 (en) | 2013-09-26 | 2023-09-05 | Samsung Electronics Co., Ltd. | Nanocrystal particles and processes for synthesizing the same |
US9372291B2 (en) | 2013-11-04 | 2016-06-21 | Sung Nae CHO | Heat blocking system utilizing particulates |
WO2015065134A1 (ko) | 2013-11-04 | 2015-05-07 | 조승래 | 공동들을 이용한 열 차단 시스템용 다중층 코팅 시스템 및 그 제조방법 |
WO2015065133A1 (ko) | 2013-11-04 | 2015-05-07 | 조승래 | 입자를 이용한 열 차단 시스템 |
US9335023B2 (en) * | 2013-12-11 | 2016-05-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Quantum dot lens and manufacturing method thereof |
DE102014102848A1 (de) * | 2013-12-19 | 2015-06-25 | Osram Gmbh | Konversionselement, Verfahren zur Herstellung eines Konversionselements, optoelektronisches Bauelement umfassend ein Konversionselement |
WO2015095296A1 (en) * | 2013-12-20 | 2015-06-25 | 3M Innovative Properties Company | Quantum dot article with improved edge ingress |
EP3091832A4 (en) | 2014-01-07 | 2017-10-04 | Once Innovations, Inc. | System and method of enhancing swine reproduction |
US9247603B2 (en) | 2014-02-11 | 2016-01-26 | Once Innovations, Inc. | Shunt regulator for spectral shift controlled light source |
JP2016108412A (ja) * | 2014-12-04 | 2016-06-20 | シャープ株式会社 | 半導体ナノ粒子蛍光体、波長変換部および発光装置 |
KR20150129232A (ko) | 2014-05-09 | 2015-11-19 | 삼성디스플레이 주식회사 | 백라이트 유닛 및 이를 포함하는 표시 장치 |
KR20230048161A (ko) | 2014-07-16 | 2023-04-10 | 나노시스, 인크. | 양자점용 실리콘 리간드 |
JP6883159B2 (ja) * | 2014-11-04 | 2021-06-09 | Nsマテリアルズ株式会社 | 波長変換部材の製造方法 |
CN104409592A (zh) * | 2014-11-26 | 2015-03-11 | 京东方科技集团股份有限公司 | Led、导光板、背光模组和显示装置 |
US9620686B2 (en) * | 2015-01-28 | 2017-04-11 | Apple Inc. | Display light sources with quantum dots |
JP6448397B2 (ja) | 2015-02-02 | 2019-01-09 | 富士フイルム株式会社 | 蛍光体分散組成物及びそれを用いて得られた蛍光成形体、波長変換膜、波長変換部材、バックライトユニット、液晶表示装置 |
KR102319111B1 (ko) | 2015-03-30 | 2021-11-01 | 삼성디스플레이 주식회사 | 발광 소자 |
WO2016162233A1 (en) * | 2015-04-07 | 2016-10-13 | Philips Lighting Holding B.V. | Lighting device for colored light |
JP5952938B1 (ja) | 2015-04-21 | 2016-07-13 | シャープ株式会社 | 発光装置および画像表示装置 |
US9943042B2 (en) | 2015-05-18 | 2018-04-17 | Biological Innovation & Optimization Systems, LLC | Grow light embodying power delivery and data communications features |
EP3297770B1 (en) * | 2015-05-20 | 2023-08-30 | OSRAM Opto Semiconductors GmbH | Insulator-coated quantum dots for use in led lighting and display devices |
JP6100831B2 (ja) | 2015-05-26 | 2017-03-22 | シャープ株式会社 | 発光装置および画像表示装置 |
EP3320568B1 (en) * | 2015-07-07 | 2021-03-24 | Lumileds LLC | Device for emitting light and a method for its fabrication |
WO2017091269A2 (en) * | 2015-08-31 | 2017-06-01 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
KR20180052679A (ko) | 2015-09-09 | 2018-05-18 | 나노시스, 인크. | 청색 방출을 갖는 고 발광 무카드뮴 나노결정 |
US9788387B2 (en) | 2015-09-15 | 2017-10-10 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
US9844116B2 (en) | 2015-09-15 | 2017-12-12 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
CN108136726A (zh) * | 2015-09-24 | 2018-06-08 | 3M创新有限公司 | 量子点制品的基体 |
KR102512555B1 (ko) * | 2015-10-15 | 2023-03-21 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 포함하는 발광소자 패키지 |
DE102015117940A1 (de) * | 2015-10-21 | 2017-04-27 | Osram Opto Semiconductors Gmbh | Optischer Sensor |
EP3168278B2 (en) | 2015-10-28 | 2022-02-09 | Samsung Electronics Co., Ltd. | Quantum dots, production methods thereof, and electronic devices including the same |
KR102447309B1 (ko) * | 2015-12-24 | 2022-09-26 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
KR102444177B1 (ko) * | 2015-12-28 | 2022-09-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR102653473B1 (ko) | 2015-12-29 | 2024-04-01 | 삼성전자주식회사 | 양자점을 포함하는 전자 소자 |
WO2017127302A1 (en) | 2016-01-19 | 2017-07-27 | Nanosys, Inc. | Inp quantum dots with gap and alp shells and method of producing the same |
EP3208291A1 (en) * | 2016-02-16 | 2017-08-23 | Henkel AG & Co. KGaA | Nanocrystal epoxy thiol composite material and nanocrystal epoxy thiol composite film |
JP6955502B2 (ja) | 2016-02-26 | 2021-10-27 | ナノシス・インク. | 低カドミウム含有量のナノ構造体組成物およびその使用 |
WO2017172869A1 (en) | 2016-03-29 | 2017-10-05 | Zdenko Grajcar | System and method of illuminating livestock |
CN105870302B (zh) * | 2016-03-30 | 2019-01-29 | 深圳市聚飞光电股份有限公司 | 一种高色域白光量子点led的封装方法 |
EP3448957B1 (en) | 2016-04-26 | 2023-04-26 | Nanosys, Inc. | Stable inp quantum dots with thick shell coating and method of producing the same |
EP3242333B1 (en) * | 2016-05-03 | 2020-09-09 | Nokia Technologies Oy | An apparatus and method of forming an apparatus comprising a graphene field effect transistor |
KR102529150B1 (ko) | 2016-05-11 | 2023-05-03 | 삼성전자주식회사 | 광 변환 장치, 그 제조 방법, 및 이를 포함하는 광원 모듈과 백라이트 유닛 |
US10316250B2 (en) | 2016-05-19 | 2019-06-11 | Nanosys, Inc. | Method to improve the morphology of core/shell quantum dots for highly luminescent nanostructures |
JP2019519455A (ja) | 2016-06-06 | 2019-07-11 | ナノシス・インク. | 高温でコアシェルナノ結晶を合成する方法 |
EP3475388A1 (en) | 2016-06-27 | 2019-05-01 | Nanosys, Inc. | Methods for buffered coating of nanostructures |
JP2019535840A (ja) * | 2016-08-22 | 2019-12-12 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 光学デバイスのための混合物 |
US10595376B2 (en) | 2016-09-13 | 2020-03-17 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
US10314125B2 (en) | 2016-09-30 | 2019-06-04 | Once Innovations, Inc. | Dimmable analog AC circuit |
CN106356463B (zh) * | 2016-10-11 | 2017-12-29 | 深圳市华星光电技术有限公司 | Qled显示装置的制作方法 |
JP6698510B2 (ja) * | 2016-12-19 | 2020-05-27 | 富士フイルム株式会社 | 波長変換フィルムおよびバックライトユニット |
KR102612499B1 (ko) * | 2016-12-23 | 2023-12-08 | 쿼스텀닷 비.브이. | Iii-v 코어와 합금된 ii-vi 외부 쉘을 갖는 양자점 |
KR20180087487A (ko) | 2017-01-23 | 2018-08-02 | 삼성디스플레이 주식회사 | 파장 변환 부재 및 이를 포함하는 백라이트 유닛 |
JP2018137321A (ja) | 2017-02-21 | 2018-08-30 | シャープ株式会社 | 発光装置および画像表示装置 |
US10325963B2 (en) * | 2017-02-24 | 2019-06-18 | Innolux Corporation | Display device |
US20180334090A1 (en) * | 2017-05-19 | 2018-11-22 | Ford Global Technologies, Llc | Brake component illuminator and illumination method |
US10768485B2 (en) * | 2017-07-05 | 2020-09-08 | Nanoco Technologies Ltd. | Quantum dot architectures for color filter applications |
TWI702362B (zh) * | 2017-07-13 | 2020-08-21 | 東貝光電科技股份有限公司 | Led發光裝置 |
CN107619485A (zh) * | 2017-09-08 | 2018-01-23 | 福建师范大学 | 无机钙钛矿量子点间规聚苯乙烯复合薄膜及其制备方法 |
US10711188B2 (en) | 2017-09-21 | 2020-07-14 | Raytheon Company | Process for producing quantum dots having broadened optical emission |
EP3694953A4 (en) * | 2017-10-11 | 2021-10-13 | The Government of the United States of America as represented by the Secretary of the Navy | MANUFACTURING OF THIOL-YNE NANOCOMPOSITES WITH LUMINESCENT QUANTUM POINTS WITH MODULABLE OPTICAL, THERMAL AND MECHANICAL PROPERTIES |
CN111492036A (zh) | 2017-10-25 | 2020-08-04 | 纳米系统公司 | 具有厚壳包覆的稳定inp量子点及其制造方法 |
US20190273178A1 (en) | 2018-03-05 | 2019-09-05 | Nanosys, Inc. | Decreased Photon Reabsorption in Emissive Quantum Dots |
DE102018112585B4 (de) * | 2018-05-25 | 2023-12-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Konverter mit quantenpunkten, bauelement mit konverter und verfahren zur herstellung |
WO2019231828A1 (en) | 2018-05-30 | 2019-12-05 | Christian Ippen | METHOD FOR SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS |
CN110655922B (zh) | 2018-06-29 | 2024-02-27 | 昭荣化学工业株式会社 | 使用In3+盐作为掺杂剂的ZnSe量子点的波长调谐 |
US11204444B2 (en) | 2018-08-24 | 2021-12-21 | Consolidated Nuclear Security, LLC | Quantum dot lightning detection and warning system and method |
JP6975122B2 (ja) | 2018-11-06 | 2021-12-01 | 信越化学工業株式会社 | 樹脂組成物、波長変換材料、波長変換フィルム、led素子、バックライトユニット及び画像表示装置 |
JP7269728B2 (ja) * | 2018-12-25 | 2023-05-09 | 東京応化工業株式会社 | 量子ドット分散液の製造方法、及び量子ドット分散液 |
CN113646403A (zh) | 2019-02-05 | 2021-11-12 | 纳米系统公司 | 使用熔盐化学合成无机纳米结构的方法 |
CN110989242A (zh) * | 2019-12-06 | 2020-04-10 | Tcl华星光电技术有限公司 | 背光模组和显示装置 |
WO2021141945A1 (en) | 2020-01-06 | 2021-07-15 | Nanosys, Inc. | Rohs compliant mixed quantum dot films |
WO2023141438A1 (en) | 2022-01-19 | 2023-07-27 | Nanosys, Inc. | Uv-curable quantum dot formulations |
EP4231366A1 (en) | 2022-02-21 | 2023-08-23 | ETH Zurich | An integrated circuit comprising a resistive switching section |
US11784805B2 (en) | 2022-03-07 | 2023-10-10 | Raytheon Company | Ultra high entropy material-based non-reversible spectral signature generation via quantum dots |
WO2023183619A1 (en) | 2022-03-25 | 2023-09-28 | Nanosys, Inc. | Silica composite microparticles comprising nanostructures |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05152609A (ja) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | 発光ダイオード |
WO1996010282A1 (en) * | 1994-09-29 | 1996-04-04 | British Telecommunications Public Limited Company | Optical fibre with quantum dots |
WO1996021868A1 (en) * | 1995-01-11 | 1996-07-18 | The Government Of The United States Of America, Represented By The Secretary Of The Navy | Glass matrix doped with activated luminescent nanocrystalline particles |
JPH0950057A (ja) * | 1995-05-31 | 1997-02-18 | Mitsui Toatsu Chem Inc | 半導体超微粒子含有ポリマー粒子 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3125332B2 (ja) | 1991-06-21 | 2001-01-15 | ソニー株式会社 | 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法 |
JP3229620B2 (ja) * | 1991-07-22 | 2001-11-19 | 三井化学株式会社 | 半導体超微粒子の製造方法および組成物 |
US5505928A (en) | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
WO1993010564A1 (en) | 1991-11-22 | 1993-05-27 | The Regents Of The University Of California | Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers |
US5260957A (en) * | 1992-10-29 | 1993-11-09 | The Charles Stark Draper Laboratory, Inc. | Quantum dot Laser |
US5293050A (en) | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
EP0622439A1 (en) * | 1993-04-20 | 1994-11-02 | Koninklijke Philips Electronics N.V. | Quantum sized activator doped semiconductor particles |
US6048616A (en) * | 1993-04-21 | 2000-04-11 | Philips Electronics N.A. Corp. | Encapsulated quantum sized doped semiconductor particles and method of manufacturing same |
US5442254A (en) * | 1993-05-04 | 1995-08-15 | Motorola, Inc. | Fluorescent device with quantum contained particle screen |
US5422489A (en) | 1994-01-24 | 1995-06-06 | Bhargava; Rameshwar N. | Light emitting device |
JPH07218938A (ja) * | 1994-02-08 | 1995-08-18 | Asahi Chem Ind Co Ltd | 加工性に優れた非線形光学材料 |
US5448582A (en) * | 1994-03-18 | 1995-09-05 | Brown University Research Foundation | Optical sources having a strongly scattering gain medium providing laser-like action |
US5650787A (en) * | 1995-05-24 | 1997-07-22 | Hughes Electronics | Scanning antenna with solid rotating anisotropic core |
US5932309A (en) * | 1995-09-28 | 1999-08-03 | Alliedsignal Inc. | Colored articles and compositions and methods for their fabrication |
JPH09281900A (ja) * | 1996-01-08 | 1997-10-31 | Toray Ind Inc | 自発光ディスプレイ |
RU2152106C1 (ru) * | 1996-06-19 | 2000-06-27 | Матсусита Электрик Индастриал Ко., Лтд. | Оптоэлектронный материал, устройство для его использования и способ изготовления оптоэлектронного материала |
JP3773541B2 (ja) * | 1996-06-26 | 2006-05-10 | シーメンス アクチエンゲゼルシヤフト | ルミネセンス変換エレメントを有する半導体発光素子 |
JPH10270799A (ja) * | 1997-03-21 | 1998-10-09 | Sanyo Electric Co Ltd | 発光素子 |
JP3266072B2 (ja) * | 1997-10-14 | 2002-03-18 | 富士電機株式会社 | 多色発光有機エレクトロルミネッセンス素子の製造方法 |
US6322901B1 (en) * | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US6005707A (en) * | 1997-11-21 | 1999-12-21 | Lucent Technologies Inc. | Optical devices comprising polymer-dispersed crystalline materials |
US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
US6501091B1 (en) | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US6608439B1 (en) * | 1998-09-22 | 2003-08-19 | Emagin Corporation | Inorganic-based color conversion matrix element for organic color display devices and method of fabrication |
US6221602B1 (en) * | 1998-11-10 | 2001-04-24 | Bio-Pixels Ltd. | Functionalized nanocrystals and their use in labeling for strand synthesis or sequence determination |
-
1998
- 1998-10-07 US US09/167,795 patent/US6501091B1/en not_active Expired - Lifetime
-
1999
- 1999-04-01 EP EP10180634.7A patent/EP2325897B1/en not_active Expired - Lifetime
- 1999-04-01 JP JP2000541740A patent/JP5031141B2/ja not_active Expired - Lifetime
- 1999-04-01 EP EP10180612.3A patent/EP2309557B1/en not_active Expired - Lifetime
- 1999-04-01 EP EP99915206.9A patent/EP1070355B1/en not_active Expired - Lifetime
- 1999-04-01 WO PCT/US1999/007219 patent/WO1999050916A1/en active Application Filing
- 1999-07-09 US US09/350,956 patent/US6803719B1/en not_active Expired - Lifetime
-
2002
- 2002-12-26 US US10/329,909 patent/US6914265B2/en not_active Expired - Lifetime
- 2002-12-26 US US10/329,596 patent/US6890777B2/en not_active Expired - Lifetime
-
2004
- 2004-06-25 US US10/877,698 patent/US7264527B2/en not_active Expired - Lifetime
-
2007
- 2007-04-13 US US11/787,152 patent/US7692373B2/en not_active Expired - Lifetime
-
2010
- 2010-02-04 US US12/700,713 patent/US20100176715A1/en not_active Abandoned
- 2010-02-04 US US12/700,711 patent/US8053972B2/en not_active Expired - Fee Related
- 2010-02-04 US US12/700,709 patent/US20100141118A1/en not_active Abandoned
-
2011
- 2011-02-28 JP JP2011042580A patent/JP2011142336A/ja active Pending
- 2011-08-11 US US13/208,169 patent/US8174181B2/en not_active Expired - Fee Related
-
2012
- 2012-05-07 US US13/465,553 patent/US8362684B2/en not_active Expired - Fee Related
-
2013
- 2013-01-17 US US13/743,983 patent/US20130207073A1/en not_active Abandoned
-
2014
- 2014-05-07 JP JP2014096216A patent/JP6092809B2/ja not_active Expired - Lifetime
-
2015
- 2015-12-25 JP JP2015254999A patent/JP2016114949A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05152609A (ja) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | 発光ダイオード |
WO1996010282A1 (en) * | 1994-09-29 | 1996-04-04 | British Telecommunications Public Limited Company | Optical fibre with quantum dots |
WO1996021868A1 (en) * | 1995-01-11 | 1996-07-18 | The Government Of The United States Of America, Represented By The Secretary Of The Navy | Glass matrix doped with activated luminescent nanocrystalline particles |
JPH0950057A (ja) * | 1995-05-31 | 1997-02-18 | Mitsui Toatsu Chem Inc | 半導体超微粒子含有ポリマー粒子 |
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