FR2988223B1 - Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs - Google Patents

Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs

Info

Publication number
FR2988223B1
FR2988223B1 FR1200815A FR1200815A FR2988223B1 FR 2988223 B1 FR2988223 B1 FR 2988223B1 FR 1200815 A FR1200815 A FR 1200815A FR 1200815 A FR1200815 A FR 1200815A FR 2988223 B1 FR2988223 B1 FR 2988223B1
Authority
FR
France
Prior art keywords
nanocristals
aplatised
producing
devices
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1200815A
Other languages
English (en)
Other versions
FR2988223A1 (fr
Inventor
Benoit Sebastien Romain Mahler
Thomas Gautier Nicolas Pons
Elsa Jeanne Leila Cassette
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nexdot
Original Assignee
Nexdot
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1200815A priority Critical patent/FR2988223B1/fr
Application filed by Nexdot filed Critical Nexdot
Priority to EP13719897.4A priority patent/EP2828194B8/fr
Priority to PCT/FR2013/050579 priority patent/WO2013140083A1/fr
Priority to KR1020147029212A priority patent/KR102038170B1/ko
Priority to JP2015500967A priority patent/JP6223417B2/ja
Priority to CN201380025973.4A priority patent/CN104302572B/zh
Publication of FR2988223A1 publication Critical patent/FR2988223A1/fr
Priority to US14/328,786 priority patent/US9447927B2/en
Priority to US15/229,211 priority patent/US9958137B2/en
Application granted granted Critical
Publication of FR2988223B1 publication Critical patent/FR2988223B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/06—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for filtering out ultraviolet radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
FR1200815A 2012-03-19 2012-03-19 Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs Active FR2988223B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1200815A FR2988223B1 (fr) 2012-03-19 2012-03-19 Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs
PCT/FR2013/050579 WO2013140083A1 (fr) 2012-03-19 2013-03-19 Dispositif émettant de la lumière contenant des nanocristaux colloïdaux semi-conducteurs anisotropes aplatis et procédés de fabrication de tels dispositifs
KR1020147029212A KR102038170B1 (ko) 2012-03-19 2013-03-19 평탄한 이방성의 콜로이드성 반도체 나노결정들을 포함하는 발광 디바이스 및 이러한 디바이스의 제조 방법
JP2015500967A JP6223417B2 (ja) 2012-03-19 2013-03-19 異方性平坦コロイド半導体ナノ結晶を含む発光素子およびその製造方法
EP13719897.4A EP2828194B8 (fr) 2012-03-19 2013-03-19 Dispositif émettant de la lumière contenant des nanocristaux colloïdaux semi-conducteurs anisotropes aplatis et procédés de fabrication de tels dispositifs
CN201380025973.4A CN104302572B (zh) 2012-03-19 2013-03-19 包含各向异性平胶体半导体纳米晶体的发光设备及其制造方法
US14/328,786 US9447927B2 (en) 2012-03-19 2014-07-11 Light-emitting device containing flattened anisotropic colloidal semiconductor nanocrystals and processes for manufacturing such devices
US15/229,211 US9958137B2 (en) 2012-03-19 2016-08-05 Light-emitting device containing anisotropic flat colloidal semiconductor nanocrystals and methods of manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1200815A FR2988223B1 (fr) 2012-03-19 2012-03-19 Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs

Publications (2)

Publication Number Publication Date
FR2988223A1 FR2988223A1 (fr) 2013-09-20
FR2988223B1 true FR2988223B1 (fr) 2016-09-02

Family

ID=46634189

Family Applications (1)

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FR1200815A Active FR2988223B1 (fr) 2012-03-19 2012-03-19 Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs

Country Status (2)

Country Link
US (1) US9958137B2 (fr)
FR (1) FR2988223B1 (fr)

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US10099938B2 (en) 2013-12-12 2018-10-16 Samsung Electronics Co., Ltd. Electrically conductive thin films
WO2020129134A1 (fr) * 2018-12-17 2020-06-25 シャープ株式会社 Élément électroluminescent et dispositif d'affichage
WO2020209973A2 (fr) * 2019-03-12 2020-10-15 Lumisyn LLC Procédé de fabrication de nanocristaux semi-conducteurs colloïdaux
US10886486B1 (en) 2019-08-05 2021-01-05 Sharp Kabushiki Kaisha QLED with asymmetrical quantum emitters
KR20210034953A (ko) 2019-09-23 2021-03-31 삼성전자주식회사 발광소자, 발광소자의 제조 방법과 표시 장치
US11871610B2 (en) 2021-05-13 2024-01-09 Sharp Kabushiki Kaisha Dual bank structure for improved extraction from an emissive layer
CN114695581B (zh) * 2022-04-27 2024-05-14 安徽大学 一种硫化铋纳米片阵列的制备方法及基于其的异质结型光电极

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Also Published As

Publication number Publication date
US20160356456A1 (en) 2016-12-08
US9958137B2 (en) 2018-05-01
FR2988223A1 (fr) 2013-09-20

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