JP6955502B2 - 低カドミウム含有量のナノ構造体組成物およびその使用 - Google Patents
低カドミウム含有量のナノ構造体組成物およびその使用 Download PDFInfo
- Publication number
- JP6955502B2 JP6955502B2 JP2018544362A JP2018544362A JP6955502B2 JP 6955502 B2 JP6955502 B2 JP 6955502B2 JP 2018544362 A JP2018544362 A JP 2018544362A JP 2018544362 A JP2018544362 A JP 2018544362A JP 6955502 B2 JP6955502 B2 JP 6955502B2
- Authority
- JP
- Japan
- Prior art keywords
- shell
- core
- nanostructures
- zinc
- optical film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002086 nanomaterial Substances 0.000 title claims description 145
- 229910052793 cadmium Inorganic materials 0.000 title claims description 32
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 title claims description 32
- 239000000203 mixture Substances 0.000 title description 31
- 239000012788 optical film Substances 0.000 claims description 36
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 26
- 238000006862 quantum yield reaction Methods 0.000 claims description 22
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 230000003796 beauty Effects 0.000 claims 1
- 239000011257 shell material Substances 0.000 description 136
- 239000002096 quantum dot Substances 0.000 description 40
- 239000002159 nanocrystal Substances 0.000 description 39
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 36
- 239000000463 material Substances 0.000 description 36
- 239000002243 precursor Substances 0.000 description 32
- 239000010410 layer Substances 0.000 description 30
- 239000003446 ligand Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 24
- 238000003786 synthesis reaction Methods 0.000 description 23
- 125000000217 alkyl group Chemical group 0.000 description 22
- 239000011701 zinc Substances 0.000 description 21
- 229910052725 zinc Inorganic materials 0.000 description 21
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 19
- 239000011258 core-shell material Substances 0.000 description 19
- 239000002105 nanoparticle Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 12
- 238000005424 photoluminescence Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- -1 nanodots Substances 0.000 description 11
- 239000011669 selenium Substances 0.000 description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 10
- 238000004020 luminiscence type Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 239000011541 reaction mixture Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 229910052711 selenium Inorganic materials 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 229910052717 sulfur Inorganic materials 0.000 description 8
- 239000011593 sulfur Substances 0.000 description 8
- 239000002070 nanowire Substances 0.000 description 7
- LPEBYPDZMWMCLZ-CVBJKYQLSA-L zinc;(z)-octadec-9-enoate Chemical compound [Zn+2].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O LPEBYPDZMWMCLZ-CVBJKYQLSA-L 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 238000000103 photoluminescence spectrum Methods 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 229910007709 ZnTe Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- MBBWTVUFIXOUBE-UHFFFAOYSA-L zinc;dicarbamodithioate Chemical compound [Zn+2].NC([S-])=S.NC([S-])=S MBBWTVUFIXOUBE-UHFFFAOYSA-L 0.000 description 5
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 4
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 4
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000005642 Oleic acid Substances 0.000 description 4
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 4
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 4
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 4
- 229940098697 zinc laurate Drugs 0.000 description 4
- 229940105125 zinc myristate Drugs 0.000 description 4
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229940012185 zinc palmitate Drugs 0.000 description 4
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 4
- 229940057977 zinc stearate Drugs 0.000 description 4
- GPYYEEJOMCKTPR-UHFFFAOYSA-L zinc;dodecanoate Chemical compound [Zn+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O GPYYEEJOMCKTPR-UHFFFAOYSA-L 0.000 description 4
- GJAPSKMAVXDBIU-UHFFFAOYSA-L zinc;hexadecanoate Chemical compound [Zn+2].CCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCC([O-])=O GJAPSKMAVXDBIU-UHFFFAOYSA-L 0.000 description 4
- PKJOUIVGCFHFTK-UHFFFAOYSA-L zinc;hexanoate Chemical compound [Zn+2].CCCCCC([O-])=O.CCCCCC([O-])=O PKJOUIVGCFHFTK-UHFFFAOYSA-L 0.000 description 4
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 4
- GBFLQPIIIRJQLU-UHFFFAOYSA-L zinc;tetradecanoate Chemical compound [Zn+2].CCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCC([O-])=O GBFLQPIIIRJQLU-UHFFFAOYSA-L 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229910004262 HgTe Inorganic materials 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- RZJRJXONCZWCBN-UHFFFAOYSA-N alpha-octadecene Natural products CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 3
- PRAKJMSDJKAYCZ-UHFFFAOYSA-N dodecahydrosqualene Natural products CC(C)CCCC(C)CCCC(C)CCCCC(C)CCCC(C)CCCC(C)C PRAKJMSDJKAYCZ-UHFFFAOYSA-N 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000000383 hazardous chemical Substances 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 230000000116 mitigating effect Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical group CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 3
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 3
- 238000006303 photolysis reaction Methods 0.000 description 3
- 230000015843 photosynthesis, light reaction Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 3
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 3
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 239000005639 Lauric acid Substances 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- UENWRTRMUIOCKN-UHFFFAOYSA-N benzyl thiol Chemical compound SCC1=CC=CC=C1 UENWRTRMUIOCKN-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 description 2
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical compound CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- VAMFXQBUQXONLZ-UHFFFAOYSA-N n-alpha-eicosene Natural products CCCCCCCCCCCCCCCCCCC=C VAMFXQBUQXONLZ-UHFFFAOYSA-N 0.000 description 2
- 239000002073 nanorod Substances 0.000 description 2
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 238000005580 one pot reaction Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- LPNBBFKOUUSUDB-UHFFFAOYSA-N p-toluic acid Chemical compound CC1=CC=C(C(O)=O)C=C1 LPNBBFKOUUSUDB-UHFFFAOYSA-N 0.000 description 2
- YIYBQIKDCADOSF-UHFFFAOYSA-N pent-2-enoic acid Chemical compound CCC=CC(O)=O YIYBQIKDCADOSF-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004246 zinc acetate Substances 0.000 description 2
- 229940102001 zinc bromide Drugs 0.000 description 2
- 239000011667 zinc carbonate Substances 0.000 description 2
- 235000004416 zinc carbonate Nutrition 0.000 description 2
- 229910000010 zinc carbonate Inorganic materials 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- GTLDTDOJJJZVBW-UHFFFAOYSA-N zinc cyanide Chemical compound [Zn+2].N#[C-].N#[C-] GTLDTDOJJJZVBW-UHFFFAOYSA-N 0.000 description 2
- 229940105296 zinc peroxide Drugs 0.000 description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 2
- 229960001763 zinc sulfate Drugs 0.000 description 2
- 229910000368 zinc sulfate Inorganic materials 0.000 description 2
- RXBXBWBHKPGHIB-UHFFFAOYSA-L zinc;diperchlorate Chemical compound [Zn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O RXBXBWBHKPGHIB-UHFFFAOYSA-L 0.000 description 2
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 2
- CWMPPVPFLSZGCY-VOTSOKGWSA-N (2E)-oct-2-enoic acid Chemical compound CCCCC\C=C\C(O)=O CWMPPVPFLSZGCY-VOTSOKGWSA-N 0.000 description 1
- YYGNTYWPHWGJRM-UHFFFAOYSA-N (6E,10E,14E,18E)-2,6,10,15,19,23-hexamethyltetracosa-2,6,10,14,18,22-hexaene Chemical compound CC(C)=CCCC(C)=CCCC(C)=CCCC=C(C)CCC=C(C)CCC=C(C)C YYGNTYWPHWGJRM-UHFFFAOYSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- 125000006545 (C1-C9) alkyl group Chemical group 0.000 description 1
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- NKJOXAZJBOMXID-UHFFFAOYSA-N 1,1'-Oxybisoctane Chemical compound CCCCCCCCOCCCCCCCC NKJOXAZJBOMXID-UHFFFAOYSA-N 0.000 description 1
- XCWPBWWTGHQKDR-UHFFFAOYSA-N 1,3-dithiolane-2-thione Chemical compound S=C1SCCS1 XCWPBWWTGHQKDR-UHFFFAOYSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- MNZAKDODWSQONA-UHFFFAOYSA-N 1-dibutylphosphorylbutane Chemical compound CCCCP(=O)(CCCC)CCCC MNZAKDODWSQONA-UHFFFAOYSA-N 0.000 description 1
- 229940106006 1-eicosene Drugs 0.000 description 1
- FIKTURVKRGQNQD-UHFFFAOYSA-N 1-eicosene Natural products CCCCCCCCCCCCCCCCCC=CC(O)=O FIKTURVKRGQNQD-UHFFFAOYSA-N 0.000 description 1
- FRPZMMHWLSIFAZ-UHFFFAOYSA-N 10-undecenoic acid Chemical compound OC(=O)CCCCCCCCC=C FRPZMMHWLSIFAZ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- CWMPPVPFLSZGCY-UHFFFAOYSA-N 2-Octenoic Acid Natural products CCCCCC=CC(O)=O CWMPPVPFLSZGCY-UHFFFAOYSA-N 0.000 description 1
- ULIKDJVNUXNQHS-UHFFFAOYSA-N 2-Propene-1-thiol Chemical compound SCC=C ULIKDJVNUXNQHS-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N 2-butenoic acid Chemical compound CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- WXBXVVIUZANZAU-UHFFFAOYSA-N 2-decenoic acid Chemical compound CCCCCCCC=CC(O)=O WXBXVVIUZANZAU-UHFFFAOYSA-N 0.000 description 1
- NIONDZDPPYHYKY-UHFFFAOYSA-N 2-hexenoic acid Chemical compound CCCC=CC(O)=O NIONDZDPPYHYKY-UHFFFAOYSA-N 0.000 description 1
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 1
- XXHDAWYDNSXJQM-UHFFFAOYSA-N 3-hexenoic acid Chemical compound CCC=CCC(O)=O XXHDAWYDNSXJQM-UHFFFAOYSA-N 0.000 description 1
- VTBHBNXGFPTBJL-UHFFFAOYSA-N 4-tert-butyl-1-sulfanylidene-2,6,7-trioxa-1$l^{5}-phosphabicyclo[2.2.2]octane Chemical compound C1OP2(=S)OCC1(C(C)(C)C)CO2 VTBHBNXGFPTBJL-UHFFFAOYSA-N 0.000 description 1
- IJBFSOLHRKELLR-UHFFFAOYSA-N 5-dodecenoic acid Chemical compound CCCCCCC=CCCCC(O)=O IJBFSOLHRKELLR-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- FBGUHQCIYMCZGX-UHFFFAOYSA-N CCC(C)P(=[Se])(C(C)CC)C(C)CC Chemical compound CCC(C)P(=[Se])(C(C)CC)C(C)CC FBGUHQCIYMCZGX-UHFFFAOYSA-N 0.000 description 1
- WWYXQDHOXQYEJX-UHFFFAOYSA-N CNC=O.NN Chemical compound CNC=O.NN WWYXQDHOXQYEJX-UHFFFAOYSA-N 0.000 description 1
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- OPGOLNDOMSBSCW-CLNHMMGSSA-N Fursultiamine hydrochloride Chemical compound Cl.C1CCOC1CSSC(\CCO)=C(/C)N(C=O)CC1=CN=C(C)N=C1N OPGOLNDOMSBSCW-CLNHMMGSSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- BHEOSNUKNHRBNM-UHFFFAOYSA-N Tetramethylsqualene Natural products CC(=C)C(C)CCC(=C)C(C)CCC(C)=CCCC=C(C)CCC(C)C(=C)CCC(C)C(C)=C BHEOSNUKNHRBNM-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- XRHFHISEKQBHIN-UHFFFAOYSA-N [Se].P Chemical group [Se].P XRHFHISEKQBHIN-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- PVEOYINWKBTPIZ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C PVEOYINWKBTPIZ-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012733 comparative method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- ZBCKWHYWPLHBOK-UHFFFAOYSA-N cyclohexylphosphane Chemical compound PC1CCCCC1 ZBCKWHYWPLHBOK-UHFFFAOYSA-N 0.000 description 1
- 231100000135 cytotoxicity Toxicity 0.000 description 1
- 230000003013 cytotoxicity Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- XUDOZULIAWNMIU-UHFFFAOYSA-N delta-hexenoic acid Chemical compound OC(=O)CCCC=C XUDOZULIAWNMIU-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LAWOZCWGWDVVSG-UHFFFAOYSA-N dioctylamine Chemical compound CCCCCCCCNCCCCCCCC LAWOZCWGWDVVSG-UHFFFAOYSA-N 0.000 description 1
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical class C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 210000002257 embryonic structure Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- RWNJOXUVHRXHSD-UHFFFAOYSA-N hept-6-enoic acid Chemical compound OC(=O)CCCCC=C RWNJOXUVHRXHSD-UHFFFAOYSA-N 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 1
- NIDHFQDUBOVBKZ-UHFFFAOYSA-N hex-4-enoic acid Chemical compound CC=CCCC(O)=O NIDHFQDUBOVBKZ-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- MZSJGCPBOVTKHR-UHFFFAOYSA-N isothiocyanatocyclohexane Chemical compound S=C=NC1CCCCC1 MZSJGCPBOVTKHR-UHFFFAOYSA-N 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- GPSDUZXPYCFOSQ-UHFFFAOYSA-N m-toluic acid Chemical compound CC1=CC=CC(C(O)=O)=C1 GPSDUZXPYCFOSQ-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- KWKAKUADMBZCLK-UHFFFAOYSA-N methyl heptene Natural products CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004001 molecular interaction Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- JXTPJDDICSTXJX-UHFFFAOYSA-N n-Triacontane Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCC JXTPJDDICSTXJX-UHFFFAOYSA-N 0.000 description 1
- 239000002064 nanoplatelet Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229940038384 octadecane Drugs 0.000 description 1
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- HVAMZGADVCBITI-UHFFFAOYSA-N pent-4-enoic acid Chemical compound OC(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-N 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000012688 phosphorus precursor Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000003642 reactive oxygen metabolite Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000010900 secondary nucleation Methods 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- AWTPFHXPJRMMAX-UHFFFAOYSA-N selenium;urea Chemical class [Se].NC(N)=O AWTPFHXPJRMMAX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229940032094 squalane Drugs 0.000 description 1
- 229940031439 squalene Drugs 0.000 description 1
- TUHBEKDERLKLEC-UHFFFAOYSA-N squalene Natural products CC(=CCCC(=CCCC(=CCCC=C(/C)CCC=C(/C)CC=C(C)C)C)C)C TUHBEKDERLKLEC-UHFFFAOYSA-N 0.000 description 1
- JIWBIWFOSCKQMA-UHFFFAOYSA-N stearidonic acid Natural products CCC=CCC=CCC=CCC=CCCCCC(O)=O JIWBIWFOSCKQMA-UHFFFAOYSA-N 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000004763 sulfides Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- DZQQRNFLQBSVBN-UHFFFAOYSA-N tri(butan-2-yl)phosphane Chemical compound CCC(C)P(C(C)CC)C(C)CC DZQQRNFLQBSVBN-UHFFFAOYSA-N 0.000 description 1
- IYMHCKVVJXJPDB-UHFFFAOYSA-N tributyl(selanylidene)-$l^{5}-phosphane Chemical group CCCCP(=[Se])(CCCC)CCCC IYMHCKVVJXJPDB-UHFFFAOYSA-N 0.000 description 1
- FQVPFGDPYSIWTM-UHFFFAOYSA-N tributyl(sulfanylidene)-$l^{5}-phosphane Chemical compound CCCCP(=S)(CCCC)CCCC FQVPFGDPYSIWTM-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical group CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- BHWOYTDRBNAVRI-UHFFFAOYSA-N trimethyl(selanylidene)-$l^{5}-phosphane Chemical compound CP(C)(C)=[Se] BHWOYTDRBNAVRI-UHFFFAOYSA-N 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- YGWBZFDBSTZZHD-UHFFFAOYSA-N tritert-butyl(selanylidene)-$l^{5}-phosphane Chemical compound CC(C)(C)P(=[Se])(C(C)(C)C)C(C)(C)C YGWBZFDBSTZZHD-UHFFFAOYSA-N 0.000 description 1
- BWHDROKFUHTORW-UHFFFAOYSA-N tritert-butylphosphane Chemical compound CC(C)(C)P(C(C)(C)C)C(C)(C)C BWHDROKFUHTORW-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Luminescent Compositions (AREA)
- Optical Filters (AREA)
Description
光を放出する層;
光放出層上に配置された光学フィルム層;
フィルム層上の光学的に透明なバリア層;および
バリア層上に配置された光学素子を含む。
[0040] 様々なナノ構造体のコロイド合成のための方法は、当技術分野で知られている。そのような方法には、例えば、得られるナノ構造体のサイズおよび/または形状分布を制御するために、ナノ構造体の成長を制御する技術が含まれる。
[0054] いくつかの実施形態では、ナノ構造体は、コアおよび少なくとも1つのシェルを含む。いくつかの実施形態では、ナノ構造体は、コアおよび少なくとも2つのシェルを含む。シェルは、例えば、ナノ構造体の量子収率および/または安定性を増加させることができる。いくつかの実施形態では、コアおよびシェルは異なる材料を含む。いくつかの実施形態では、ナノ構造体は、異なるシェル材料のシェルを含む。
[0071] いくつかの実施形態では、コアまたはコア/シェルナノ構造体上に堆積されたシェルは、ZnSeシェルである。
[0076] いくつかの実施形態では、コアまたはコア/シェルナノ構造体上に堆積されたシェルは、ZnSシェルである。
[0083] いくつかの実施形態では、コア/シェルナノ構造体は、コア/ZnSe/ZnSナノ構造体である。いくつかの実施形態において、コア/シェルナノ構造体は、CdSe/ZnSe/ZnSナノ構造体またはInP/ZnSe/ZnSナノ構造体である。
[0089] それらの組成にかかわらず、ほとんどの量子ドットは、励起光子に連続的に暴露された後、元来の高い量子収率を保持しない。厚いシェルの使用は、光誘起量子収率の劣化の影響を緩和するのに有効であると考えられるが、量子ドットの光分解は、それらを酸化物で覆うことによって、さらに遅延できる可能性がある。量子ドットを酸化物でコーティングすると、その表面がそれらの環境から物理的に隔離される。
[0092] ナノ構造体の少なくとも1つの第1および第2の集団は、フィルム(例えば、有機ポリマー、シリコン含有ポリマー、無機、ガラス、および/または他のマトリックス)を形成するマトリックスに埋め込まれる。このフィルムは、ナノ構造蛍光体の生産に使用されてもよく、および/または例えばLED、バックライト、ダウンライト、または他のディスプレイもしくは照明ユニットもしくは光学フィルタなどの装置に組み込まれてもよい。例示的な蛍光体および照明ユニットは、異なる発光極大を有するナノ構造体の2つ以上の異なる集団を組み込むことによって、または所望の波長もしくはその近傍に発光極大又は広い色域を有するナノ構造体の集団を組み込むことによって、例えば特定の色光を生成することができる。様々な適切なマトリックスが当該分野で公知である。例えば、米国特許第7,068,898号および米国特許出願公開第2010/0276638号、第2007/0034833号および第2012/0113672号を参照されたい。例示的なナノ構造蛍光体フィルム、LED、バックライトユニットなどは、例えば、米国特許出願公開第2010/0276638号、第2012/0113672号、第2008/0237540号、第2010/0110728号、および第2010/0155749号および米国特許第7,374,807号、第7,645,397号、第6,501,091号、および第6,803,719号に記載されている。
(a)光を放出する層;
(b)光放出層上に配置されたナノ構造体の少なくとも1つの第1および第2の集団を含む光学フィルム層;
(c)光学フィルム層上の光学的に透明なバリア層;および
(d)バリア層上に配置された光学素子、を含むディスプレイ装置もまた提供する。
[0100] 以下の実施例は、本明細書に記載の生成物および方法の例示であり、これに限定されない。当分野で通常遭遇する様々な条件、配合、および他のパラメータの適切な改変および適合は、本開示の観点から当業者に明らかであり、本発明の精神および範囲内である。
[0102] ここでは、高温での厚いシェルのコーティング法が記載されており、CdSeナノ粒子上に数ナノメートルの厚さのZnSe/ZnSシェルを生成する。フォトルミネッセンス量子収率は90%を超え、非常に狭い粒度分布が維持される。この方法は、緑色および赤色の発光コアシェル量子ドットナノ粒子を生成する。
[0107] 色域有効範囲およびROHS準拠が大幅に改善されたTVディスプレイ用光学フィルムが生産された。
Claims (13)
- ディスプレイ装置に有用な光学フィルムであって、
カドミウム含有コアシェル−ナノ構造体の少なくとも1つの第1の集団、および、
共通マトリックス材料中のカドミウム含有コア−シェルナノ構造体ではないコア−シェルナノ構造体の少なくとも1つの第2の集団を含み、前記ナノ構造体の前記少なくとも1つの第1の集団が20〜40nmの半値全幅(FWHM)を有するCdSe/ZnSe/ZnSを含み、前記ナノ構造体の前記少なくとも1つの第2の集団が20〜45nmのFWHMを有するInP/ZnSe/ZnSを含み、前記光学フィルムがカドミウムを10〜99ppm含有する、ディスプレイ装置に有用な光学フィルム。 - ディスプレイ装置内にある場合、72%〜98%のRec.2020有効範囲を達成することができる、請求項1に記載の光学フィルム。
- ディスプレイ装置内にある場合、90%を超えるRec.2020有効範囲を達成することができる、請求項1に記載の光学フィルム。
- 520nmでの発光極大、20〜40nmのFWHM、および90%を超える量子収率を有するカドミウム含有コア−シェルナノ構造体の緑色発光の第1集団を含む、請求項1〜3のいずれか一項に記載の光学フィルム。
- 630nmでの発光極大、20〜45nmのFWHM、および75%を超える量子収率を有するインジウム含有コア−シェルナノ構造体の赤色発光の第2集団を含む、請求項1〜4のいずれか一項に記載の光学フィルム。
- 請求項1〜5のいずれか一項に記載の光学フィルムを含むディスプレイ装置。
- 80〜98%のRec.2020有効範囲を有する、請求項6に記載のディスプレイ装置。
- 90%〜98%のRec.2020有効範囲を有する、請求項6に記載のディスプレイ装置。
- 光を放出する層;前記光放出層上に配置された前記光学フィルム層;前記フィルム層上の光学的に透明なバリア層;およびバリア層上に配置された光学素子を含む、請求項6〜8のいずれか一項に記載のディスプレイ装置。
- 前記光放出層、前記フィルム層、および前記光学素子は、前記ディスプレイ装置の画素ユニットの一部である、請求項9に記載のディスプレイ装置。
- 前記光学素子がカラーフィルタである、請求項9または10に記載のディスプレイ装置。
- 前記バリア層が酸化物を含む、請求項9〜11のいずれか一項に記載のディスプレイ装置。
- 前記光学的に透明なバリア層が、前記ナノ構造体を光束、熱、酸素、水分、またはこれらの組み合わせによる劣化から保護するように構成される、請求項9〜12のいずれか一項に記載のディスプレイ装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662300430P | 2016-02-26 | 2016-02-26 | |
US62/300,430 | 2016-02-26 | ||
US201662301860P | 2016-03-01 | 2016-03-01 | |
US62/301,860 | 2016-03-01 | ||
PCT/US2017/019297 WO2017147382A1 (en) | 2016-02-26 | 2017-02-24 | Low cadmium content nanostructure compositions and uses thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019507906A JP2019507906A (ja) | 2019-03-22 |
JP6955502B2 true JP6955502B2 (ja) | 2021-10-27 |
Family
ID=58358820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018544362A Active JP6955502B2 (ja) | 2016-02-26 | 2017-02-24 | 低カドミウム含有量のナノ構造体組成物およびその使用 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20170250322A1 (ja) |
EP (1) | EP3419927B1 (ja) |
JP (1) | JP6955502B2 (ja) |
KR (1) | KR20180113606A (ja) |
CN (1) | CN109071213A (ja) |
AU (1) | AU2017223845B2 (ja) |
CA (1) | CA3015622A1 (ja) |
WO (1) | WO2017147382A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170306227A1 (en) * | 2016-04-26 | 2017-10-26 | Nanosys, Inc. | Stable inp quantum dots with thick shell coating and method of producing the same |
CN111492036A (zh) * | 2017-10-25 | 2020-08-04 | 纳米系统公司 | 具有厚壳包覆的稳定inp量子点及其制造方法 |
JP7152940B2 (ja) * | 2017-12-11 | 2022-10-13 | 東京応化工業株式会社 | 硬化性組成物、フィルム、光学フィルム、発光表示素子パネル、及び発光表示装置 |
CN109929333A (zh) * | 2017-12-15 | 2019-06-25 | Tcl集团股份有限公司 | 一种提高无镉量子点墨水发光性能的方法 |
CN110028968B (zh) * | 2018-01-11 | 2023-11-21 | 三星电子株式会社 | 不含镉的量子点、包括其的量子点-聚合物复合物、和显示装置 |
US11142685B2 (en) | 2018-01-11 | 2021-10-12 | Samsung Electronics Co., Ltd. | Cadmium free quantum dots |
KR20190085886A (ko) | 2018-01-11 | 2019-07-19 | 삼성전자주식회사 | 양자점 집단과 이를 포함하는 조성물 |
CN112111277A (zh) * | 2018-10-18 | 2020-12-22 | 浙江大学 | 单光子源和qled |
US11236270B2 (en) | 2018-11-29 | 2022-02-01 | Samsung Electronics Co., Ltd. | Quantum dots, a composition or composite including the same, and an electronic device including the same |
CN109782486A (zh) * | 2019-02-13 | 2019-05-21 | 深圳扑浪创新科技有限公司 | 一种背光显示器件及其制备方法 |
US20220298411A1 (en) * | 2019-04-26 | 2022-09-22 | Merck Patent Gmbh | Nanoparticle |
KR102071689B1 (ko) | 2019-07-09 | 2020-01-30 | 주식회사 신아티앤씨 | 양자점층을 포함하는 광변환 필름, 상기 광변환 필름을 포함하는 디스플레이 장치용 백라이트 유닛, 및 양자점 분산액의 제조방법 |
KR20210041374A (ko) | 2019-10-07 | 2021-04-15 | 삼성전자주식회사 | 양자점, 및 이를 포함하는 전자 소자 |
KR102145056B1 (ko) | 2020-01-06 | 2020-08-28 | 주식회사 신아티앤씨 | 양자점층을 포함하는 광변환 필름, 상기 광변환 필름을 포함하는 디스플레이 장치용 백라이트 유닛, 및 양자점 분산액의 제조방법 |
KR102105164B1 (ko) | 2020-01-06 | 2020-06-01 | 주식회사 신아티앤씨 | 양자점층을 포함하는 광변환 필름, 상기 광변환 필름을 포함하는 디스플레이 장치용 백라이트 유닛, 및 양자점 분산액의 제조방법 |
KR102108373B1 (ko) | 2020-01-06 | 2020-05-26 | 주식회사 신아티앤씨 | 양자점층을 포함하는 광변환 필름, 상기 광변환 필름을 포함하는 디스플레이 장치용 백라이트 유닛, 및 양자점 분산액의 제조방법 |
KR102259404B1 (ko) | 2020-08-04 | 2021-06-01 | 심현정 | 큐브 학습용 해설집을 이용한 큐브 학습 방법 |
KR102491636B1 (ko) | 2020-10-26 | 2023-01-26 | 재단법인 구미전자정보기술원 | 양자점의 제조방법 및 이를 이용하여 제조된 양자점 |
CN114540030B (zh) * | 2020-11-25 | 2024-05-03 | 优美特创新材料股份有限公司 | 高稳定性半导体纳米材料 |
KR20220095394A (ko) | 2020-12-29 | 2022-07-07 | 삼성디스플레이 주식회사 | 양자점 및 이의 제조 방법, 양자점을 포함한 광학 부재 및 전자 장치 |
WO2024053714A1 (ja) * | 2022-09-09 | 2024-03-14 | 昭栄化学工業株式会社 | ナノ粒子複合体 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5505928A (en) | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US6501091B1 (en) | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US6306736B1 (en) | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
US6225198B1 (en) | 2000-02-04 | 2001-05-01 | The Regents Of The University Of California | Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process |
US6576291B2 (en) | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
US6788453B2 (en) | 2002-05-15 | 2004-09-07 | Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem | Method for producing inorganic semiconductor nanocrystalline rods and their use |
CN100584921C (zh) | 2002-09-05 | 2010-01-27 | 奈米系统股份有限公司 | 促进电荷转移至纳米结构或自纳米结构转移出电荷的有机物 |
WO2004022714A2 (en) | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Organic species that facilitate charge transfer to or from nanostructures |
JP4032918B2 (ja) * | 2002-10-24 | 2008-01-16 | ソニー株式会社 | 表示装置およびその製造方法 |
US7645397B2 (en) | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
US7374807B2 (en) | 2004-01-15 | 2008-05-20 | Nanosys, Inc. | Nanocrystal doped matrixes |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
AU2005253604B2 (en) | 2004-06-08 | 2011-09-08 | Scandisk Corporation | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7557028B1 (en) | 2004-07-28 | 2009-07-07 | Nanosys, Inc. | Process for group III-V semiconductor nanostructure synthesis and compositions made using same |
US20100155749A1 (en) | 2007-03-19 | 2010-06-24 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
US20080237540A1 (en) | 2007-03-19 | 2008-10-02 | Nanosys, Inc. | Methods for encapsulating nanocrystals |
US20100110728A1 (en) | 2007-03-19 | 2010-05-06 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
CN101424768A (zh) * | 2007-11-02 | 2009-05-06 | 北京京东方光电科技有限公司 | 导光板、背光源及液晶显示器 |
CN101629076B (zh) * | 2008-07-16 | 2013-04-17 | 北京大学 | 二氧化硅包被的荧光量子点纳米颗粒及其制备方法 |
GB0813273D0 (en) * | 2008-07-19 | 2008-08-27 | Nanoco Technologies Ltd | Method for producing aqueous compatible nanoparticles |
JP5710597B2 (ja) * | 2009-04-28 | 2015-04-30 | キユーデイー・ビジヨン・インコーポレーテツド | 光学材料、光学部品および方法 |
CN102656233B (zh) * | 2009-05-01 | 2015-04-29 | 纳米系统公司 | 用于纳米结构体分散的官能化基质 |
GB0916700D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
WO2011053635A1 (en) * | 2009-10-30 | 2011-05-05 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
EP2528989B1 (en) * | 2010-01-28 | 2015-03-04 | Yissum Research and Development Company of The Hebrew University of Jerusalem | Phosphor-nanoparticle combinations |
JP5940079B2 (ja) * | 2010-11-10 | 2016-06-29 | ナノシス・インク. | ディスプレイバックライトユニット及びディスプレイバックライトユニットの形成方法 |
JP2012234634A (ja) | 2011-04-28 | 2012-11-29 | Hitachi Cable Ltd | フラットケーブル、及びフラットケーブルとプリント配線板との接続構造 |
WO2013078247A1 (en) * | 2011-11-22 | 2013-05-30 | Qd Vision, Inc. | Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same |
US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
KR101463602B1 (ko) * | 2012-07-03 | 2014-11-20 | 주식회사 엘엠에스 | 캡슐화된 양자점 및 이를 이용한 장치 |
US9568387B2 (en) * | 2012-08-08 | 2017-02-14 | Rosemount Inc. | Thermal diagnostic for single-crystal process fluid pressure sensor |
EP2915197B1 (en) * | 2012-11-01 | 2020-02-05 | Lumileds Holding B.V. | Led-based device with wide color gamut |
EP2970764B1 (en) * | 2013-03-14 | 2018-03-07 | Nanosys, Inc. | Method for solventless quantum dot exchange |
WO2015004711A1 (ja) * | 2013-07-08 | 2015-01-15 | Nsマテリアルズ株式会社 | 半導体を利用した発光デバイス |
US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
US20150189256A1 (en) * | 2013-12-16 | 2015-07-02 | Christian Stroetmann | Autostereoscopic multi-layer display and control approaches |
US10421899B2 (en) * | 2014-03-10 | 2019-09-24 | 3M Innovative Properties Company | Composite nanoparticles including a thiol-substituted silicone |
JP2015187942A (ja) * | 2014-03-26 | 2015-10-29 | 日本放送協会 | 発光素子、発光素子の製造方法および表示装置 |
JP6347154B2 (ja) * | 2014-05-23 | 2018-06-27 | 大日本印刷株式会社 | 液晶表示装置およびカラーフィルタ |
CN104357058B (zh) * | 2014-11-21 | 2016-04-13 | 中国人民解放军济南军区联勤部疾病预防控制中心 | 一种强红黄光发射的多面体形CdSe/ZnSe/ZnS核壳结构量子点及其制备方法 |
EP3237942A4 (en) * | 2014-12-22 | 2018-10-10 | 3M Innovative Properties Company | Downconversion film element |
KR102446858B1 (ko) * | 2015-08-07 | 2022-09-23 | 삼성디스플레이 주식회사 | 양자점 제조 방법 |
CN105467682A (zh) * | 2016-01-15 | 2016-04-06 | 京东方科技集团股份有限公司 | 膜层结构、其制作方法、显示基板、背光源及显示装置 |
-
2017
- 2017-02-24 CN CN201780020560.5A patent/CN109071213A/zh active Pending
- 2017-02-24 JP JP2018544362A patent/JP6955502B2/ja active Active
- 2017-02-24 AU AU2017223845A patent/AU2017223845B2/en active Active
- 2017-02-24 US US15/441,729 patent/US20170250322A1/en not_active Abandoned
- 2017-02-24 WO PCT/US2017/019297 patent/WO2017147382A1/en active Application Filing
- 2017-02-24 KR KR1020187027244A patent/KR20180113606A/ko not_active Application Discontinuation
- 2017-02-24 CA CA3015622A patent/CA3015622A1/en not_active Abandoned
- 2017-02-24 EP EP17711820.5A patent/EP3419927B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
AU2017223845B2 (en) | 2021-12-09 |
KR20180113606A (ko) | 2018-10-16 |
AU2017223845A1 (en) | 2018-09-06 |
WO2017147382A1 (en) | 2017-08-31 |
US20170250322A1 (en) | 2017-08-31 |
CA3015622A1 (en) | 2017-08-31 |
JP2019507906A (ja) | 2019-03-22 |
EP3419927A1 (en) | 2019-01-02 |
CN109071213A (zh) | 2018-12-21 |
EP3419927B1 (en) | 2023-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6955502B2 (ja) | 低カドミウム含有量のナノ構造体組成物およびその使用 | |
US10975301B2 (en) | Method for synthesizing core shell nanocrystals at high temperatures | |
JP6972014B2 (ja) | 厚いシェルコーティングを有する安定したInP量子ドット及びこれを生成する方法 | |
EP3458545B1 (en) | Method to improve the morphology of core/shell quantum dots for highly luminescent nanostructures | |
US20200347295A1 (en) | InP Quantum Dots with GaP and Alp Shells and Methods of Producing the Same | |
JP2022115866A (ja) | 半導体ナノ粒子およびその製造方法ならびに発光デバイス | |
JP2013064141A (ja) | 青色発光半導体ナノクリスタル物質 | |
JP2007528612A5 (ja) | ||
EP4073202B1 (en) | Rohs compliant quantum dot films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210416 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210902 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211001 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6955502 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |