JP2011142336A - プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス - Google Patents
プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス Download PDFInfo
- Publication number
- JP2011142336A JP2011142336A JP2011042580A JP2011042580A JP2011142336A JP 2011142336 A JP2011142336 A JP 2011142336A JP 2011042580 A JP2011042580 A JP 2011042580A JP 2011042580 A JP2011042580 A JP 2011042580A JP 2011142336 A JP2011142336 A JP 2011142336A
- Authority
- JP
- Japan
- Prior art keywords
- light
- quantum dots
- host matrix
- emitting device
- population
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Abstract
【課題手段】量子ドットのサイズ分布は、そこから放出されるべき特定の色を可能にするために選択される。デバイスから放出された光は単色又は混合色(多色)のいずれでもよく、ドットから放出された光のみから成るか、又はドットから放出された光、及び第1の光源から放出された光の混合から成る。ドットは、CdSeのようなドーピングされていない半導体から成るのが望ましく、光ルミネセンスを増加させるために任意に被覆できる。
【選択図】図1
Description
緑色LEDは、上記本発明の原理により構成されてきた。このダイオードを構成するために使用される量子ドットは、CdSeコア及びZnSシェルから成る。量子ドットの吸収特性及び発光特性は、第1にCdSeコアのサイズにより決定される。ZnSシェルは、電子及びホールをコアの中に閉じ込め、量子ドット表面を電気的かつ化学的に保護するために作用する。コア及びシェル双方は、高温の有機液体に加えられた前駆物質からのCdSe又はZnS生成を含む湿式化学技術を使用して合成される。
16mLのトリオクチルホスフィン(TOP)、TOP中の4mLの1Mセレン化トリオクチルホスフィン(TOPSe)、及び0.2mLのジメチルカドミウムが、不活性雰囲気(グローブボックスに充填された窒素)中で混合された。30gの酸化トリオクチルホスフィン(TOPO)が180℃の真空のもとで1時間にわたって乾燥され、次に350℃の窒素のもとで加熱される。次に前駆物質溶液がTOPO中に注入される。温度は直ちに約260℃まで下がり、CdSeナノクリスタルが直ちに形成される。注入直後のナノクリスタルの吸収ピークは、約470ナノメートルであることがわかった。温度は約10〜15分の間250〜260℃に保持され、ナノクリスタルが成長することを可能にする。この時間の間、吸収ピークは470ナノメートルから490ナノメートルへシフトする。次にこの温度は80℃まで下がり、窒素のもとで溶液中で保持される。熱は除去され、TOPOが室温まで冷却されたときにTOPOの凝固を防ぐために、約15mLのブタノールが加えられる。このプロセスは、2.7x10-3mol(2.7mmol)のCdSe量子ドットを生成した。
5分の1(0.5mmol)のCdSeコア成長溶液(15mL)が、被覆された量子ドットの生成に使用された。40〜50mLのメタノールをゆっくり加えることにより、ナノクリスタルが溶液の外部に析出した。次に析出はヘキサン中で再分散され、0.2マイクロメートルのフィルタ紙で濾過される。40gのTOPOは上記のように乾燥され、次に80℃まで冷却される。ヘキサン中のナノクリスタルはTOPO中に注入され、ヘキサンが2時間にわたって真空のもとで蒸発させられた。次に、4mLのTOPを混合することにより、ZnS前駆物質溶液が不活性雰囲気中で準備された。0.28mLのジエチル亜鉛、及び0.56mLのビス−トリメチルシリルが、(TMS)2Sを硫化する。前駆物質の量は厚さ約9オングストロームのZnSシェルを生成するように選択され、9オングストロームは2.3オングストローム/単分子層での4単分子層に対応する。次に、ナノクリスタル/TOPO溶液は140℃まで加熱され、前駆物質溶液は4分間にわたってゆっくりと滴り落ちた。次に温度が100℃まで下がり、少なくとも2時間にわたって保持された。熱が除去され、TOPOの凝固を防ぐためにブタノールが加えられた。
次に、これらの量子ドットは、ポリ(スチレン)中で分散する。上記のように生成されたTOPO溶液中の5分の1(0.1mmolのCdSe)の量子ドットが取り出された。量子ドットは析出させられ、次に上記のようにヘキサン中で分散した。次にヘキサン溶液中の5分の1(0.02mmolのCdSe)の量子ドットが取り出され、真空の元でヘキサンが蒸発した。量子ドットが0.1mLのトルエン中で再分散された。0.05gのN官能化アミン末端ポリスチレン(分子量=2600)が、0.2mLのトルエン中で溶解された。量子ドット(0.01mmolのCdSe)及び0.05mLの官能化されたポリスチレンをトルエン(約0.01g)中に含む0.05mLのトルエン溶液が混合され、約10分にわたって超音波処理された。1mLのトルエン中に1gのポリスチレン(分子量=45,000)の溶液が準備された。0.1mLのこの濃縮されたポリスチレン溶液(約0.05gのポリスチレン)が、量子ドット/官能化されたポリスチレン溶液に加えられた。ドット及びポリスチレンを徹底的に混合するために、結果として生成した溶液が2分間にわたって超音波処理された。
第1の光源として使用される青色ダイオードはGaNをベースにしており、450ナノメートルにおいて発光ピークを有した。ガラスキャップは短くされた、壁厚が薄いNMRチューブ(外径=5mm、内径=4.3mm、長さ=3/16インチ)であった。ガラスキャップはドット/ポリマ溶液で充填され、2時間以上にわたって流体窒素のもとで乾燥されることを可能にする。必要なときにより多くのドット/ポリマ溶液を加えて乾燥できるが、このダイオードには1つの充填及び乾燥のステップだけが必要であった。乾燥したとき、ポリマはキャップのベースにボイド(void)を残した。青色ダイオードの放出部分は、キャップのベースにおけるこのボイドに配置される。ポリマ自体は、ダイオードと接触しなかった。緑色光はGaNをベースにしたダイオードからの青色光が量子ドットを含むポリマを貫通したときに生成され、量子ドットを550ナノメートルで発光させた。550ナノメートルの光は、ダイオードを緑色に見えさせた。
14オングストロームのコア半径を有するCdSe/ZnS量子ドットが、実施例1で記載したように準備された。TOPO溶液中の2.5x10-3mmolのドットが取り出され、ドットは析出し、メタノールで2回洗浄された。次にドットは、0.27mL(2mmol)のキャッピングモノマ(6−メルカプトヘキサノール)中で再分散した。キャッピングモノマ中で量子ドットを効率的に分散させるために、溶液は最初に約10分間超音波処理され、次に50〜60℃で2分間かき混ぜられた。
12 ホストマトリックス
14、18、22 量子ドット
16、20 層
Claims (30)
- 光を透過させるホストマトリクスを形成するために反応できる前駆材料と、
前記前駆材料中に凝集せずに分散した量子ドットの集団であって、各量子ドットが、選択されたサイズ及び組成のコアを備え、前記集団が量子ドットの選択されたサイズ分布を備える
ことを特徴とするプレポリマ組成物。 - 前記前駆材料が、ポリマを形成するために反応できるモノマである請求項1に記載のプレポリマ組成物。
- 前記前駆材料が、エポキシド、スチレン、アミンからなる群から選択されるモノマを含む請求項2に記載のプレポリマ組成物。
- 前記コアが、CdS、CdSe、CdTe、ZnS、ZnSe及びこれらの混合物からなる群から選択される請求項1に記載のプレポリマ組成物。
- 前記量子ドットが、CdS、CdSe、CdTe、ZnS、及びZnSe及びこれらの混合物からなる群から選択される材料を含む少なくとも1のコアオーバーコートを更に備え、好ましくは前記量子ドットはCdSeを備えるコアとZnSを備える少なくとも1のシェルを備える請求項4に記載のプレポリマ組成物。
- 前記量子ドットが、前記前駆材料に対して親和性を有する材料を含む外部コートを備える請求項1に記載のプレポリマ組成物。
- 前記外部コートが、前記前駆材料のモノマを含む請求項6に記載のプレポリマ組成物。
- 前記量子ドットの集団が、前記コアの直径において10%以下の根平均二乗偏差を示すサイズ分布を有する請求項1に記載のプレポリマ組成物。
- 前記ホストマトリックスが、エポキシポリマ、シリカポリマ、ポリスチレン及びポリイミドからなる群から選択される少なくとも1のポリマを含み、好ましくは、前記ホストマトリクスがポリスチレンを含み、より好ましくは前記ホストマトリクスがアミン基と官能基化するポリスチレンを含み、最も好ましくは前記ホストマトリクスがアミンを末端基とするポリスチレンを含む請求項1に記載のプレポリマ組成物。
- (a)プレポリマ組成物を準備することであって、前記プレポリマ組成物が、
(i)光を透過させるホストマトリクスを形成するために反応できる前駆材料と、
(ii)前記前駆材料中に凝集せずに分散した量子ドットの集団であって、各量子ドットが、選択されたサイズ及び組成のコアを備え、前記集団が量子ドットの選択されたサイズ分布を備え、
(b)内部に分散した量子ドットの集団を有する固体のホストマトリクスを形成するために前記前駆材料を反応させることと、
(c)内部に分散した量子ドットの集団を有する前記ホストマトリクスを照射するように配置された第1の光源を設けること
を含む発光デバイスを準備するための方法。 - 前記ステップ(a)が、
少なくとも2つの前駆材料を提供することであって、各前駆材料が選択されたサイズ、サイズ分布、組成又はその組み合わせを有する量子ドットの集団をその中に配置しており、他のどの前駆材料中の量子ドットの集団とのそれと異なるように選択され、
前記ステップ(b)が、
内部に配置された量子ドットの集団を有する第1のホストマトリクス層を形成するように前記前駆材料を反応させることを含む請求項10に記載の方法。 - 少なくとも第2のホストマトリクス層を形成するために、ステップ(b)において形成された第1のホストマトリクス層上でステップ(a)及び(b)を繰り返すことを更に含む請求項10又は11に記載の方法。
- 前記前駆材料がエポキシド、スチレン、アミンからなる群の中から選択されるモノマを含む請求項10〜12のいずれか1項に記載の方法。
- 前記ホストマトリックスが、エポキシポリマ、シリカポリマ、ポリスチレン及びポリイミドからなる群の中から選択される少なくとも1のポリマを含み、好ましくは、前記ホストマトリクスがポリスチレンを含み、より好ましくは前記ホストマトリクスがアミン基と官能基化するポリスチレンを含み、最も好ましくは前記ホストマトリクスがアミンを末端基とするポリスチレンを含む請求項10〜13のいずれか1項に記載の方法。
- 前記量子ドットが、前記ホストマトリクスに対して親和性を有する外部コートを備え、これにより前記ホストマトリクス中で前記量子ドットが凝集せずに分散することを可能にし、好ましくは前記外部コートが、前記ホストマトリクスのポリマに関連するモノマを含む請求項10に記載の方法。
- 第1の光源として機能するデバイスと、
ホストマトリクス中に分散した光輝性の量子ドットの集団であって、前記ホストマトリクスが第1の層を備え、
前記量子ドットの少なくとも一部が、前記光源によって生成される光の少なくとも一部のエネルギーよりも小さいバンドギャップエネルギーを有し、前記ホストマトリクスが前記光源からの光を透過させ、これにより、前記量子ドットにそのサイズの色特性の光ルミネセンス光を生成させることを特徴とする発光デバイス。 - 前記集団の各量子ドットが、選択されたサイズ及び組成のコアを備え、前記集団が量子ドットの選択されたサイズ分布を備える請求項16に記載の発光デバイス。
- 前記光輝性の量子ドットの集団が、前記第1の光源から照射されるときに赤色の第2の光を発光するように選択された量子ドットの第1のサブセットと、前記第1の光源から照射されるときに緑色の第2の光を発光するように選択された量子ドットの第2のサブセットとを備える請求項16に記載の発光デバイス。
- 前記量子ドットの前記第1のサブセットと前記第2のサブセットとの両方が、前記ホストマトリクス中の第1の層中に分散され、これにより前記ホストマトリクスが、赤色の第2の光を発光するように選択された量子ドットの第1のサブセットと、同じ層に分散した緑色の第2の光を発光するように選択された量子ドットの第2のサブセットと備え、好ましくは前記デバイスが白色発光デバイスであり、前記白色が、赤色の第2の光、緑色の第2の光、及び前記第1の光源から発光される青色の光を備える請求項18に記載の発光デバイス。
- 赤色の第2の光を発光するように選択された量子ドットの前記第1のサブセットが、前記ホストマトリクスの第1の層中に分散され、前記ホストマトリクスが、内部に分散して緑色の第2の光を発光するように選択された量子ドットの第2のサブセットを備える第2の層を更に備え、好ましくは前記デバイスが白色発光デバイスであって、前記白色が、赤色の第2の光、緑色の第2の光、及び前記第一の光源から発光される青色の光を備える請求項18に記載の発光デバイス。
- 前記第1の層と前記第2の層とが互いに隣接している請求項20に記載の発光デバイス。
- 前記第1の層は、第2の層からの緑色の第2の光が通過できるように配置されている請求項20に記載の発光デバイス。
- 前記第2の層は、前記第1の層からの赤色の第2の光が通過できるように配置されている請求項20に記載の発光デバイス。
- 前記光輝性の量子ドットの集団が、前記第1の光源から照射されるときに青色の第2の光を発光するように選択された量子ドットの第3のサブセットを更に備える請求項18〜20のいずれか1項に記載の発光デバイス。
- 前記発光デバイスが、照射により量子ドットの第1のサブセットにより発光した赤色の第2の光、照射により量子ドットの集団の第2のサブセットにより発光した緑色の第2の光、照射により量子ドットの集団の第3のサブセットにより発光した青色の第3の光、及び前記第1の光源により発光した光からなる群の中から選択される2以上の光要素を備える混合色を発光し、好ましくは前記発光デバイスが赤色の第2の光、緑色の第2の光及び青色の光を含み、前記青色の光が前記第1の光源から発光される青色の第2の光及び/又は青色の光である請求項16に記載の発光デバイス。
- 各サブセットの量子ドットが、コアの直径において10%以下の根平均二乗偏差を示すサイズ分布を有する請求項18〜20のいずれか1項に記載の発光デバイス。
- 前記第1の光源が固体状態の光源であり、好ましくは前記第1の光源が発光ダイオード、レーザ、紫外線源、青色光源からなる群の中から選択される固体状態の光源であり、より好ましくは前記第1の光源が青色発光ダイオードである請求項16に記載の発光デバイス。
- 前記ホストマトリクスが、液体、ポリマ、エポキシ、シリカガラス及びシリカジェルからなる群の中から選択される少なくとも1の材料を備え、好ましくは前記ホストマトリクスがポリスチレン、ポリイミド、エポキシ、シリカガラス及びシリカジェルからなる群の中から選択される少なくとも1のポリマを備え、より好ましくは前記ホストマトリクスがポリスチレンを備え、より好ましくは前記ホストマトリクスがアミノ基と官能基化するポリスチレンを備え、最も好ましくは前記ホストマトリクスがアミンを末端基とするポリスチレンを含む請求項16に記載の発光デバイス。
- 前記量子ドットの集団が、混合色の光を発光するように選択された多分散系のサイズ分布を有し、好ましくは前記デバイスが量子ドットの多分散系の集団と前記第1の光源から発光する光との組み合わせを更に含む混合色の光を発光する請求項16に記載の発光デバイス。
- 前記量子ドットの集団が、前記ホストマトリクスに対して親和性を有する外部コートを備え、これにより前記ホストマトリクス中に前記量子ドットが凝集せずに分散し、好ましくは前記ホストマトリクスがポリマと関連するモノマを備える外部コートとを備え、より好ましくは前記外部コートがエポキシド、スチレン及びアミンからなる群の中から選択されるモノマを備える請求項16に記載の発光デバイス。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9212098P | 1998-04-01 | 1998-04-01 | |
US60/092,120 | 1998-04-01 | ||
US09/167,795 | 1998-10-07 | ||
US09/167,795 US6501091B1 (en) | 1998-04-01 | 1998-10-07 | Quantum dot white and colored light emitting diodes |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000541740A Division JP5031141B2 (ja) | 1998-04-01 | 1999-04-01 | 量子ドット白色及び着色発光ダイオード |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014096216A Division JP6092809B2 (ja) | 1998-04-01 | 2014-05-07 | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011142336A true JP2011142336A (ja) | 2011-07-21 |
Family
ID=26785282
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000541740A Expired - Lifetime JP5031141B2 (ja) | 1998-04-01 | 1999-04-01 | 量子ドット白色及び着色発光ダイオード |
JP2011042580A Pending JP2011142336A (ja) | 1998-04-01 | 2011-02-28 | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス |
JP2014096216A Expired - Lifetime JP6092809B2 (ja) | 1998-04-01 | 2014-05-07 | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス |
JP2015254999A Pending JP2016114949A (ja) | 1998-04-01 | 2015-12-25 | 量子ドットコロイド及びそれを備える発光デバイス |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000541740A Expired - Lifetime JP5031141B2 (ja) | 1998-04-01 | 1999-04-01 | 量子ドット白色及び着色発光ダイオード |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014096216A Expired - Lifetime JP6092809B2 (ja) | 1998-04-01 | 2014-05-07 | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス |
JP2015254999A Pending JP2016114949A (ja) | 1998-04-01 | 2015-12-25 | 量子ドットコロイド及びそれを備える発光デバイス |
Country Status (4)
Country | Link |
---|---|
US (12) | US6501091B1 (ja) |
EP (3) | EP2325897B1 (ja) |
JP (4) | JP5031141B2 (ja) |
WO (1) | WO1999050916A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013137689A1 (ko) * | 2012-03-16 | 2013-09-19 | 세종대학교산학협력단 | 마이크로 캡슐형 양자점- 고분자 복합체, 상기 복합체의 제조 방법, 광학요소들, 및 상기 광학요소들의 제조방법 |
JP2014531305A (ja) * | 2011-09-13 | 2014-11-27 | エンパイア テクノロジー ディベロップメント エルエルシー | ナノ吸着剤及びそれらの使用方法 |
JP2015516467A (ja) * | 2012-02-03 | 2015-06-11 | コーニンクレッカ フィリップス エヌ ヴェ | 新規材料並びに高量子収率及び高安定性を有するナノ粒子のマトリックス中への分散方法 |
KR20160138901A (ko) | 2015-05-26 | 2016-12-06 | 샤프 가부시키가이샤 | 발광 장치 및 화상 표시 장치 |
US9577160B2 (en) | 2015-04-21 | 2017-02-21 | Sharp Kabushiki Kaisha | Light-emitting device and image display |
US9786823B2 (en) | 2013-07-08 | 2017-10-10 | Ns Materials Inc. | Light-emitting device with sealing member comprising zinc sulfide particles |
US10263162B2 (en) | 2017-02-21 | 2019-04-16 | Sharp Kabushiki Kaisha | Light emitting device and image displaying system |
Families Citing this family (498)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19638667C2 (de) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE29724848U1 (de) | 1996-06-26 | 2004-09-30 | Osram Opto Semiconductors Gmbh | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6207392B1 (en) | 1997-11-25 | 2001-03-27 | The Regents Of The University Of California | Semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US7498164B2 (en) | 1998-05-16 | 2009-03-03 | Applied Biosystems, Llc | Instrument for monitoring nucleic acid sequence amplification reaction |
EP3093649B1 (en) | 1998-05-16 | 2019-05-08 | Life Technologies Corporation | A combination of a reaction apparatus and an optical instrument monitoring dna polymerase chain reactions |
US6818437B1 (en) | 1998-05-16 | 2004-11-16 | Applera Corporation | Instrument for monitoring polymerase chain reaction of DNA |
EP1039291A1 (en) * | 1999-03-26 | 2000-09-27 | Sony International (Europe) GmbH | Optochemical sensor and method for its construction |
US20070164661A1 (en) * | 1999-07-26 | 2007-07-19 | Idemitsu Kosan Co., Ltd. | Fluorescent conversion medium and color light emitting device |
GB2357856B (en) * | 1999-12-29 | 2001-12-19 | Keymed | Annular light source in borescopes and endoscopes |
EP1264375A2 (en) | 2000-03-14 | 2002-12-11 | Massachusetts Institute Of Technology | Optical amplifiers and lasers |
DE60128458T2 (de) | 2000-03-20 | 2008-01-10 | Massachusetts Institute Of Technology, Cambridge | Anorganische teilchenkonjugate |
US6759235B2 (en) * | 2000-04-06 | 2004-07-06 | Quantum Dot Corporation | Two-dimensional spectral imaging system |
US6919119B2 (en) | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
US7265161B2 (en) | 2002-10-02 | 2007-09-04 | 3M Innovative Properties Company | Multi-photon reactive compositions with inorganic particles and method for fabricating structures |
US7118845B2 (en) * | 2000-06-15 | 2006-10-10 | 3M Innovative Properties Company | Multiphoton photochemical process and articles preparable thereby |
US7381516B2 (en) * | 2002-10-02 | 2008-06-03 | 3M Innovative Properties Company | Multiphoton photosensitization system |
US7005229B2 (en) | 2002-10-02 | 2006-02-28 | 3M Innovative Properties Company | Multiphoton photosensitization method |
JP2002141556A (ja) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
US6774560B1 (en) * | 2000-09-19 | 2004-08-10 | The Regents Of The University Of California | Material system for tailorable white light emission and method for making thereof |
US6649138B2 (en) | 2000-10-13 | 2003-11-18 | Quantum Dot Corporation | Surface-modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media |
TW498702B (en) * | 2000-11-28 | 2002-08-11 | Hannstar Display Corp | Polarized electro-luminescence device and manufacturing method for the same |
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
US20020110180A1 (en) * | 2001-02-09 | 2002-08-15 | Barney Alfred A. | Temperature-sensing composition |
WO2003092043A2 (en) * | 2001-07-20 | 2003-11-06 | Quantum Dot Corporation | Luminescent nanoparticles and methods for their preparation |
US7265833B2 (en) | 2001-07-25 | 2007-09-04 | Applera Corporation | Electrophoretic system with multi-notch filter and laser excitation source |
US6710366B1 (en) * | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
US6819845B2 (en) | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
US6794265B2 (en) | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
JP4383865B2 (ja) | 2001-09-17 | 2009-12-16 | マサチューセッツ・インスティテュート・オブ・テクノロジー | 半導体ナノ結晶複合材 |
IL146226A0 (en) * | 2001-10-29 | 2002-12-01 | Yissum Res Dev Co | Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom |
EP1309013A1 (en) * | 2001-10-30 | 2003-05-07 | Agfa-Gevaert | A thin layer inorganic light emitting device with undoped zinc sulfide nanoparticles |
US6724141B2 (en) | 2001-10-30 | 2004-04-20 | Agfa-Gevaert | Particular type of a thin layer inorganic light emitting device |
US7150910B2 (en) | 2001-11-16 | 2006-12-19 | Massachusetts Institute Of Technology | Nanocrystal structures |
JP2003282944A (ja) * | 2002-03-26 | 2003-10-03 | Shin Etsu Handotai Co Ltd | 可視光発光装置 |
CA2480518C (en) * | 2002-03-29 | 2016-07-19 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US6711426B2 (en) * | 2002-04-09 | 2004-03-23 | Spectros Corporation | Spectroscopy illuminator with improved delivery efficiency for high optical density and reduced thermal load |
US20080009689A1 (en) * | 2002-04-09 | 2008-01-10 | Benaron David A | Difference-weighted somatic spectroscopy |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
US7515333B1 (en) | 2002-06-13 | 2009-04-07 | Nanosy's, Inc. | Nanotechnology-enabled optoelectronics |
EP1541656A4 (en) * | 2002-06-19 | 2007-11-14 | Nat Inst Of Advanced Ind Scien | AT LEAST PARTIAL OF A FLEXIBLE SEMICONDUCTOR AND LIGHT EMITTING DEVICE |
US7319709B2 (en) | 2002-07-23 | 2008-01-15 | Massachusetts Institute Of Technology | Creating photon atoms |
EP1576655B1 (en) * | 2002-08-15 | 2014-05-21 | Moungi G. Bawendi | Stabilized semiconductor nanocrystals |
JP2004083653A (ja) * | 2002-08-23 | 2004-03-18 | Sharp Corp | 発光装置ならびに蛍光体およびその製造方法 |
EP1537445B1 (en) * | 2002-09-05 | 2012-08-01 | Nanosys, Inc. | Nanocomposites |
AU2003279708A1 (en) * | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US20050126628A1 (en) * | 2002-09-05 | 2005-06-16 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
JP2004107572A (ja) * | 2002-09-20 | 2004-04-08 | Sharp Corp | 蛍光体およびそれを含む照明装置と表示装置 |
US7332211B1 (en) | 2002-11-07 | 2008-02-19 | Massachusetts Institute Of Technology | Layered materials including nanoparticles |
US7132787B2 (en) * | 2002-11-20 | 2006-11-07 | The Regents Of The University Of California | Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof |
US20040101822A1 (en) | 2002-11-26 | 2004-05-27 | Ulrich Wiesner | Fluorescent silica-based nanoparticles |
US20040145289A1 (en) | 2003-01-27 | 2004-07-29 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar short pass reflector and method of making |
US7312560B2 (en) * | 2003-01-27 | 2007-12-25 | 3M Innovative Properties | Phosphor based light sources having a non-planar long pass reflector and method of making |
US7091661B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a reflective polarizer |
US20040145312A1 (en) * | 2003-01-27 | 2004-07-29 | 3M Innovative Properties Company | Phosphor based light source having a flexible short pass reflector |
US7091653B2 (en) | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
US20040159900A1 (en) * | 2003-01-27 | 2004-08-19 | 3M Innovative Properties Company | Phosphor based light sources having front illumination |
JP2006516828A (ja) * | 2003-01-27 | 2006-07-06 | スリーエム イノベイティブ プロパティズ カンパニー | 蛍燐光体系光源素子および作製方法 |
US7118438B2 (en) * | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
US7245072B2 (en) * | 2003-01-27 | 2007-07-17 | 3M Innovative Properties Company | Phosphor based light sources having a polymeric long pass reflector |
US20060214903A1 (en) * | 2003-02-21 | 2006-09-28 | Sanyo Electric Co., Ltd. | Light-emitting device and display |
EP2365095A1 (en) | 2003-02-26 | 2011-09-14 | Callida Genomics, Inc. | Random array DNA analysis by hybridization |
DE10308866A1 (de) * | 2003-02-28 | 2004-09-09 | Osram Opto Semiconductors Gmbh | Beleuchtungsmodul und Verfahren zu dessen Herstellung |
US7181266B2 (en) * | 2003-03-04 | 2007-02-20 | Massachusetts Institute Of Technology | Materials and methods for near-infrared and infrared lymph node mapping |
US20050020922A1 (en) * | 2003-03-04 | 2005-01-27 | Frangioni John V. | Materials and methods for near-infrared and infrared intravascular imaging |
EP1603991A1 (en) * | 2003-03-11 | 2005-12-14 | Philips Intellectual Property & Standards GmbH | Electroluminescent device with quantum dots |
US20040252488A1 (en) * | 2003-04-01 | 2004-12-16 | Innovalight | Light-emitting ceiling tile |
US7279832B2 (en) * | 2003-04-01 | 2007-10-09 | Innovalight, Inc. | Phosphor materials and illumination devices made therefrom |
DE10316769A1 (de) * | 2003-04-10 | 2004-10-28 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoffbassierte LED und zugehöriger Leuchtstoff |
KR100691143B1 (ko) | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
WO2005016824A2 (en) * | 2003-05-05 | 2005-02-24 | The Research Foundation Of State University Of Newyork | Synthesis of nanoparticles by an emulsion-gas contacting process |
US6828576B2 (en) * | 2003-06-11 | 2004-12-07 | Paul Spivak | UV LED light projection method and apparatus |
WO2005008235A2 (en) * | 2003-07-08 | 2005-01-27 | Applera Corporation | Electrophoretic system with multi-notch filter and laser excitation source |
KR101132076B1 (ko) * | 2003-08-04 | 2012-04-02 | 나노시스, 인크. | 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 |
TWI233697B (en) * | 2003-08-28 | 2005-06-01 | Genesis Photonics Inc | AlInGaN light-emitting diode with wide spectrum and solid-state white light device |
WO2005024952A2 (en) * | 2003-09-05 | 2005-03-17 | The University Of North Carolina At Charlotte | Quantum dot optoelectronic devices with nanoscale epitaxial overgrowth and methods of manufacture |
DE10354936B4 (de) * | 2003-09-30 | 2012-02-16 | Osram Opto Semiconductors Gmbh | Strahlungemittierendes Halbleiterbauelement |
JP5419326B2 (ja) * | 2003-10-06 | 2014-02-19 | マサチューセッツ インスティテュート オブ テクノロジー | 不揮発性メモリデバイス |
US7122827B2 (en) | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
US8264431B2 (en) | 2003-10-23 | 2012-09-11 | Massachusetts Institute Of Technology | LED array with photodetector |
TWI291770B (en) * | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
US7667766B2 (en) * | 2003-12-18 | 2010-02-23 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Adjustable spectrum flash lighting for image acquisition |
US7318651B2 (en) * | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
US7102152B2 (en) * | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
DE102004001823B3 (de) * | 2004-01-08 | 2005-09-01 | Humboldt-Universität Zu Berlin | Licht emittierende Halbleitervorrichtungen mit veränderbarer Emissionswellenlänge |
JP4789809B2 (ja) * | 2004-01-15 | 2011-10-12 | サムスン エレクトロニクス カンパニー リミテッド | ナノ結晶をドーピングしたマトリックス |
US7645397B2 (en) * | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
DE102004053594A1 (de) * | 2004-01-21 | 2005-08-18 | Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto | Vorrichtung und Verfahren zum Emittieren von Ausgangslicht unter Verwendung eines Gruppe-IIB-Element-Selenid-basierten Phosphormaterials |
US20050156510A1 (en) * | 2004-01-21 | 2005-07-21 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials |
US20050167684A1 (en) * | 2004-01-21 | 2005-08-04 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based phosphor material |
US20080231170A1 (en) * | 2004-01-26 | 2008-09-25 | Fukudome Masato | Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
GB0404442D0 (en) * | 2004-02-27 | 2004-03-31 | Trackdale Ltd | Composite quantum dot structures |
US7253452B2 (en) | 2004-03-08 | 2007-08-07 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystal materials |
US7202943B2 (en) * | 2004-03-08 | 2007-04-10 | National Research Council Of Canada | Object identification using quantum dots fluorescence allocated on Fraunhofer solar spectral lines |
US20050199784A1 (en) * | 2004-03-11 | 2005-09-15 | Rizal Jaffar | Light to PWM converter |
WO2005094271A2 (en) * | 2004-03-25 | 2005-10-13 | The Regents Of The University Of California | Colloidal quantum dot light emitting diodes |
JPWO2005097939A1 (ja) * | 2004-03-30 | 2008-02-28 | 出光興産株式会社 | 蛍光変換媒体及びカラー発光装置 |
US7746681B2 (en) | 2005-01-07 | 2010-06-29 | Invisage Technologies, Inc. | Methods of making quantum dot films |
WO2005101530A1 (en) * | 2004-04-19 | 2005-10-27 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
US7773404B2 (en) | 2005-01-07 | 2010-08-10 | Invisage Technologies, Inc. | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
US7742322B2 (en) | 2005-01-07 | 2010-06-22 | Invisage Technologies, Inc. | Electronic and optoelectronic devices with quantum dot films |
CN1957478A (zh) * | 2004-04-30 | 2007-05-02 | 新南创新有限公司 | 人造无定形半导体及其在太阳能电池中的应用 |
GB0409877D0 (en) | 2004-04-30 | 2004-06-09 | Univ Manchester | Preparation of nanoparticle materials |
US20050253502A1 (en) * | 2004-05-12 | 2005-11-17 | Matsushita Electric Works, Ltd. | Optically enhanced nanomaterials |
US7235792B2 (en) | 2004-05-19 | 2007-06-26 | Carl Scott Elofson | Color-tuned volumetric light using high quantum yield nanocrystals |
EP1759145A1 (en) * | 2004-05-28 | 2007-03-07 | Tir Systems Ltd. | Luminance enhancement apparatus and method |
US7112455B2 (en) * | 2004-06-10 | 2006-09-26 | Freescale Semiconductor, Inc | Semiconductor optical devices and method for forming |
US7204631B2 (en) * | 2004-06-30 | 2007-04-17 | 3M Innovative Properties Company | Phosphor based illumination system having a plurality of light guides and an interference reflector |
US20060002108A1 (en) * | 2004-06-30 | 2006-01-05 | Ouderkirk Andrew J | Phosphor based illumination system having a short pass reflector and method of making same |
US7182498B2 (en) * | 2004-06-30 | 2007-02-27 | 3M Innovative Properties Company | Phosphor based illumination system having a plurality of light guides and an interference reflector |
US7213958B2 (en) * | 2004-06-30 | 2007-05-08 | 3M Innovative Properties Company | Phosphor based illumination system having light guide and an interference reflector |
US7255469B2 (en) * | 2004-06-30 | 2007-08-14 | 3M Innovative Properties Company | Phosphor based illumination system having a light guide and an interference reflector |
US7204630B2 (en) * | 2004-06-30 | 2007-04-17 | 3M Innovative Properties Company | Phosphor based illumination system having a plurality of light guides and an interference reflector |
US20070045777A1 (en) * | 2004-07-08 | 2007-03-01 | Jennifer Gillies | Micronized semiconductor nanocrystal complexes and methods of making and using same |
JPWO2006008987A1 (ja) * | 2004-07-15 | 2008-05-01 | 出光興産株式会社 | 有機el表示装置 |
US7229690B2 (en) * | 2004-07-26 | 2007-06-12 | Massachusetts Institute Of Technology | Microspheres including nanoparticles |
US7557028B1 (en) | 2004-07-28 | 2009-07-07 | Nanosys, Inc. | Process for group III-V semiconductor nanostructure synthesis and compositions made using same |
US7750352B2 (en) | 2004-08-10 | 2010-07-06 | Pinion Technologies, Inc. | Light strips for lighting and backlighting applications |
WO2006033732A1 (en) * | 2004-08-17 | 2006-03-30 | Invitrogen Corporation | Synthesis of highly luminescent colloidal particles |
US7235190B1 (en) | 2004-09-02 | 2007-06-26 | Sandia Corporation | Nanocluster-based white-light-emitting material employing surface tuning |
US7256057B2 (en) * | 2004-09-11 | 2007-08-14 | 3M Innovative Properties Company | Methods for producing phosphor based light sources |
JP2006083219A (ja) | 2004-09-14 | 2006-03-30 | Sharp Corp | 蛍光体およびこれを用いた発光装置 |
JP4785363B2 (ja) * | 2004-09-15 | 2011-10-05 | シャープ株式会社 | 蛍光体粒子、蛍光体粒子分散体ならびにこれらを含む照明装置および表示装置 |
TWI256149B (en) * | 2004-09-27 | 2006-06-01 | Advanced Optoelectronic Tech | Light apparatus having adjustable color light and manufacturing method thereof |
US7265488B2 (en) * | 2004-09-30 | 2007-09-04 | Avago Technologies General Ip Pte. Ltd | Light source with wavelength converting material |
US7347049B2 (en) * | 2004-10-19 | 2008-03-25 | General Electric Company | Method and system for thermochemical heat energy storage and recovery |
US10225906B2 (en) * | 2004-10-22 | 2019-03-05 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
CN1321466C (zh) * | 2004-10-26 | 2007-06-13 | 中国科学院长春应用化学研究所 | 两相热法合成硫化镉量子点 |
US20060091414A1 (en) * | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | LED package with front surface heat extractor |
US20060091411A1 (en) * | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | High brightness LED package |
US7304425B2 (en) * | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
US7329982B2 (en) * | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | LED package with non-bonded optical element |
US7799422B2 (en) * | 2004-11-03 | 2010-09-21 | Massachusetts Institute Of Technology | Absorbing film |
WO2006137924A2 (en) | 2004-11-03 | 2006-12-28 | Massachusetts Institute Of Technology | Light emitting device |
US20060240590A1 (en) * | 2004-11-09 | 2006-10-26 | The Research Foundation Of State University Of New York | Controlled synthesis of nanowires, nanodiscs, and nanostructured materials using liquid crystalline templates |
WO2006073562A2 (en) * | 2004-11-17 | 2006-07-13 | Nanosys, Inc. | Photoactive devices and components with enhanced efficiency |
KR100862455B1 (ko) | 2004-11-25 | 2008-10-08 | 삼성전기주식회사 | 나노크리스털을 이용한 발광 다이오드 및 그 제조 방법 |
US8891575B2 (en) * | 2004-11-30 | 2014-11-18 | Massachusetts Institute Of Technology | Optical feedback structures and methods of making |
US20060113895A1 (en) * | 2004-11-30 | 2006-06-01 | Baroky Tajul A | Light emitting device with multiple layers of quantum dots and method for making the device |
US20060148103A1 (en) * | 2004-12-30 | 2006-07-06 | Yin-Peng Chen | Highly sensitive biological assays |
CA2519608A1 (en) | 2005-01-07 | 2006-07-07 | Edward Sargent | Quantum dot-polymer nanocomposite photodetectors and photovoltaics |
KR100678285B1 (ko) | 2005-01-20 | 2007-02-02 | 삼성전자주식회사 | 발광 다이오드용 양자점 형광체 및 그의 제조방법 |
US7602116B2 (en) * | 2005-01-27 | 2009-10-13 | Advanced Optoelectronic Technology, Inc. | Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof |
KR100682928B1 (ko) * | 2005-02-03 | 2007-02-15 | 삼성전자주식회사 | 양자점 화합물을 포함하는 에너지 변환막 및 양자점 박막 |
US7811479B2 (en) * | 2005-02-07 | 2010-10-12 | The Trustees Of The University Of Pennsylvania | Polymer-nanocrystal quantum dot composites and optoelectronic devices |
US7522211B2 (en) * | 2005-02-10 | 2009-04-21 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Studio light |
KR100668328B1 (ko) * | 2005-02-15 | 2007-01-12 | 삼성전자주식회사 | 양자점 수직공진형 표면방출 레이저 및 그 제조방법 |
JP4604246B2 (ja) * | 2005-03-10 | 2011-01-05 | 独立行政法人産業技術総合研究所 | 高濃度に半導体ナノ粒子が分散した蛍光体及びその製造方法 |
US8748923B2 (en) | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
US7341878B2 (en) | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
WO2006105102A2 (en) * | 2005-03-28 | 2006-10-05 | The Research Foundation Of State University Of New York | Synthesis of nanostructured materials using liquid crystalline templates |
US7482608B2 (en) * | 2005-04-20 | 2009-01-27 | Iso-Science Laboratories, Inc. | Nuclear powered quantum dot light source |
DE102005019376A1 (de) * | 2005-04-26 | 2006-11-02 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Lumineszenzkonversions-LED |
JP2006309238A (ja) * | 2005-04-27 | 2006-11-09 | Samsung Electronics Co Ltd | 光ルミネセンス液晶ディスプレイ |
KR100682874B1 (ko) * | 2005-05-02 | 2007-02-15 | 삼성전기주식회사 | 백색 led |
US8084001B2 (en) | 2005-05-02 | 2011-12-27 | Cornell Research Foundation, Inc. | Photoluminescent silica-based sensors and methods of use |
KR101111747B1 (ko) | 2005-05-16 | 2012-06-12 | 삼성엘이디 주식회사 | 혼합 나노 입자 및 이를 이용한 전자소자 |
US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
WO2007103310A2 (en) | 2006-03-07 | 2007-09-13 | Qd Vision, Inc. | An article including semiconductor nanocrystals |
US9297092B2 (en) | 2005-06-05 | 2016-03-29 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
DE102005061828B4 (de) * | 2005-06-23 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Wellenlängenkonvertierendes Konvertermaterial, lichtabstrahlendes optisches Bauelement und Verfahren zu dessen Herstellung |
US7750359B2 (en) * | 2005-06-23 | 2010-07-06 | Rensselaer Polytechnic Institute | Package design for producing white light with short-wavelength LEDS and down-conversion materials |
US20070001581A1 (en) * | 2005-06-29 | 2007-01-04 | Stasiak James W | Nanostructure based light emitting devices and associated methods |
KR101106134B1 (ko) * | 2005-07-11 | 2012-01-20 | 서울옵토디바이스주식회사 | 나노와이어 형광체를 채택한 발광소자 |
US20070012355A1 (en) * | 2005-07-12 | 2007-01-18 | Locascio Michael | Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material |
CA2615134A1 (en) | 2005-07-13 | 2007-01-18 | Evident Technologies, Inc. | Light emitting diode comprising semiconductor nanocrystal complexes |
WO2007009010A2 (en) * | 2005-07-13 | 2007-01-18 | Evident Technologies, Inc. | Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors |
US7495383B2 (en) * | 2005-08-01 | 2009-02-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Phosphor based on a combination of quantum dot and conventional phosphors |
GB2472541B (en) | 2005-08-12 | 2011-03-23 | Nanoco Technologies Ltd | Nanoparticles |
US7358101B2 (en) * | 2005-09-06 | 2008-04-15 | Institute Of Nuclear Energy Research | Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots |
CN100503774C (zh) * | 2005-10-21 | 2009-06-24 | 中国科学院上海应用物理研究所 | 硫化镉裸量子点及其制备方法 |
GB0522027D0 (en) * | 2005-10-28 | 2005-12-07 | Nanoco Technologies Ltd | Controlled preparation of nanoparticle materials |
US7518160B2 (en) | 2005-10-31 | 2009-04-14 | Kyocera Corporation | Wavelength converter, lighting system, and lighting system assembly |
EP1945501A4 (en) * | 2005-11-09 | 2013-04-24 | Morgan Aircraft Llc | AIRCRAFT STEERING MODEL |
JP2007157831A (ja) * | 2005-12-01 | 2007-06-21 | Sharp Corp | 発光装置 |
WO2007067257A2 (en) * | 2005-12-02 | 2007-06-14 | Vanderbilt University | Broad-emission nanocrystals and methods of making and using same |
KR101019765B1 (ko) | 2006-01-04 | 2011-03-04 | 로무 가부시키가이샤 | 박형 발광 다이오드 램프와 그 제조 방법 |
KR20080106402A (ko) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Led로부터 광을 유도하기 위한 개별 광학 디바이스 |
CN101473453B (zh) * | 2006-01-20 | 2014-08-27 | 科锐公司 | 通过在空间上隔开荧光片转换固态光发射器内的光谱内容 |
US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
KR101249078B1 (ko) * | 2006-01-20 | 2013-03-29 | 삼성전기주식회사 | 실록산계 분산제 및 이를 포함하는 나노입자 페이스트조성물 |
KR100745745B1 (ko) * | 2006-02-21 | 2007-08-02 | 삼성전기주식회사 | 나노복합재료 및 그 제조방법 |
US8849087B2 (en) | 2006-03-07 | 2014-09-30 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
US9951438B2 (en) | 2006-03-07 | 2018-04-24 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
WO2007143197A2 (en) | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
WO2007117698A2 (en) | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Composition including material, methods of depositing material, articles including same and systems for depositing material |
KR100783251B1 (ko) * | 2006-04-10 | 2007-12-06 | 삼성전기주식회사 | 양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법 |
KR101278768B1 (ko) * | 2006-04-13 | 2013-06-25 | 삼성전자주식회사 | 전계 발광소자 및 이를 포함하는 전자장치 |
US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
US7525126B2 (en) | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
US7390117B2 (en) * | 2006-05-02 | 2008-06-24 | 3M Innovative Properties Company | LED package with compound converging optical element |
US7953293B2 (en) * | 2006-05-02 | 2011-05-31 | Ati Technologies Ulc | Field sequence detector, method and video device |
US20070257270A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with wedge-shaped optical element |
US20070257271A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with encapsulated converging optical element |
US20070258241A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with non-bonded converging optical element |
CN101484964A (zh) | 2006-05-02 | 2009-07-15 | 舒伯布尔斯公司 | 用于发光二极管及其构成的灯泡分散光并优先散射某些波长的光的方法 |
WO2007130358A2 (en) | 2006-05-02 | 2007-11-15 | Superbulbs, Inc. | Plastic led bulb |
US8941293B2 (en) | 2006-05-11 | 2015-01-27 | Samsung Electronics Co., Ltd. | Solid state lighting devices comprising quantum dots |
US20080173886A1 (en) * | 2006-05-11 | 2008-07-24 | Evident Technologies, Inc. | Solid state lighting devices comprising quantum dots |
US20070262714A1 (en) * | 2006-05-15 | 2007-11-15 | X-Rite, Incorporated | Illumination source including photoluminescent material and a filter, and an apparatus including same |
US20070262294A1 (en) * | 2006-05-15 | 2007-11-15 | X-Rite, Incorporated | Light source including quantum dot material and apparatus including same |
KR20070110995A (ko) * | 2006-05-16 | 2007-11-21 | 삼성전자주식회사 | 반도체 나노결정-금속 복합체 및 그의 제조방법 |
US8941299B2 (en) * | 2006-05-21 | 2015-01-27 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US8472758B2 (en) * | 2006-05-21 | 2013-06-25 | Massachusetts Institute Of Technology | Optical structures including nanocrystals |
WO2007143227A2 (en) * | 2006-06-10 | 2007-12-13 | Qd Vision, Inc. | Materials,thin films,optical filters, and devices including same |
US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
US8188494B2 (en) * | 2006-06-28 | 2012-05-29 | Hewlett-Packard Development Company, L.P. | Utilizing nanowire for generating white light |
CN100413938C (zh) * | 2006-07-07 | 2008-08-27 | 中国科学技术大学 | Au/CdSe异质结构量子点及其制备方法 |
US8884511B2 (en) * | 2006-07-10 | 2014-11-11 | Hewlett-Packard Development Company, L.P. | Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions |
GB2439973A (en) * | 2006-07-13 | 2008-01-16 | Sharp Kk | Modifying the optical properties of a nitride optoelectronic device |
KR100901947B1 (ko) * | 2006-07-14 | 2009-06-10 | 삼성전자주식회사 | 반도체 나노결정을 이용하는 백색 발광 다이오드 및 그의제조방법 |
US20080012034A1 (en) * | 2006-07-17 | 2008-01-17 | 3M Innovative Properties Company | Led package with converging extractor |
US8643058B2 (en) | 2006-07-31 | 2014-02-04 | Massachusetts Institute Of Technology | Electro-optical device including nanocrystals |
JP2008041361A (ja) * | 2006-08-03 | 2008-02-21 | Idemitsu Kosan Co Ltd | 蛍光変換媒体及びそれを含むカラー発光装置 |
JP2010500747A (ja) * | 2006-08-08 | 2010-01-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ナノ粒子をベースとする無機結合材料 |
WO2008021962A2 (en) | 2006-08-11 | 2008-02-21 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystals and devices |
US8120239B2 (en) * | 2006-08-16 | 2012-02-21 | Samsung Electronics Co., Ltd. | Infrared display with luminescent quantum dots |
KR101290251B1 (ko) * | 2006-08-21 | 2013-07-30 | 삼성전자주식회사 | 복합 발광 재료 및 그를 포함하는 발광 소자 |
CN101589478B (zh) * | 2006-09-08 | 2013-01-23 | 新加坡科技研究局 | 可调波长发光二极管 |
WO2008085210A2 (en) | 2006-09-12 | 2008-07-17 | Qd Vision, Inc. | Electroluminescent display useful for displaying a predetermined pattern |
WO2008033388A2 (en) | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
US7816669B1 (en) * | 2006-10-13 | 2010-10-19 | Hewlett-Packard Development Company, L.P. | Light emitting system and methods for controlling nanocrystal distribution therein |
JP4349456B2 (ja) | 2006-10-23 | 2009-10-21 | ソニー株式会社 | 固体撮像素子 |
KR20090082449A (ko) * | 2006-10-31 | 2009-07-30 | 티아이알 테크놀로지 엘피 | 광원 |
US7737636B2 (en) * | 2006-11-09 | 2010-06-15 | Intematix Corporation | LED assembly with an LED and adjacent lens and method of making same |
JP2010510671A (ja) * | 2006-11-17 | 2010-04-02 | スリーエム イノベイティブ プロパティズ カンパニー | Led光源用の光学接着組成物 |
WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
WO2008063658A2 (en) * | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008133660A2 (en) * | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US9441793B2 (en) | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
DE602007012366D1 (de) * | 2006-12-06 | 2011-03-17 | Sunflake As | Optische anordnung |
US20080216894A1 (en) * | 2007-01-08 | 2008-09-11 | Plextronics, Inc. | Quantum dot photovoltaic device |
US8836212B2 (en) | 2007-01-11 | 2014-09-16 | Qd Vision, Inc. | Light emissive printed article printed with quantum dot ink |
US20080172197A1 (en) * | 2007-01-11 | 2008-07-17 | Motorola, Inc. | Single laser multi-color projection display with quantum dot screen |
DK2148691T3 (en) | 2007-02-05 | 2015-08-17 | Apellis Pharmaceuticals Inc | Compstatinanaloger for use in the treatment of inflammatory states of the respiratory system |
DE102007009530A1 (de) * | 2007-02-27 | 2008-08-28 | Osram Opto Semiconductors Gmbh | OLED mit Farbkonversion |
CN101627482A (zh) * | 2007-03-08 | 2010-01-13 | 3M创新有限公司 | 发光元件阵列 |
US8222061B2 (en) * | 2007-03-30 | 2012-07-17 | The Penn State Research Foundation | Mist fabrication of quantum dot devices |
CN101663769B (zh) * | 2007-04-17 | 2013-02-06 | 皇家飞利浦电子股份有限公司 | 照明系统 |
US8563348B2 (en) * | 2007-04-18 | 2013-10-22 | Nanoco Technologies Ltd. | Fabrication of electrically active films based on multiple layers |
US20080264479A1 (en) | 2007-04-25 | 2008-10-30 | Nanoco Technologies Limited | Hybrid Photovoltaic Cells and Related Methods |
KR100900866B1 (ko) * | 2007-05-09 | 2009-06-04 | 삼성전자주식회사 | 나노결정-금속산화물 복합체를 이용하는 발광 다이오드소자 및 그의 제조방법 |
JP5230171B2 (ja) * | 2007-06-05 | 2013-07-10 | シャープ株式会社 | 発光装置、発光装置の製造方法、電子機器および携帯電話機 |
US20080317768A1 (en) | 2007-06-21 | 2008-12-25 | Boeing Company | Bioconjugated nanoparticles |
JP5773646B2 (ja) | 2007-06-25 | 2015-09-02 | キユーデイー・ビジヨン・インコーポレーテツド | ナノ材料を被着させることを含む組成物および方法 |
US9136498B2 (en) * | 2007-06-27 | 2015-09-15 | Qd Vision, Inc. | Apparatus and method for modulating photon output of a quantum dot light emitting device |
US20090002349A1 (en) * | 2007-06-28 | 2009-01-01 | Cok Ronald S | Electroluminescent white light emitting device |
US20090001403A1 (en) * | 2007-06-29 | 2009-01-01 | Motorola, Inc. | Inductively excited quantum dot light emitting device |
TWI365546B (en) * | 2007-06-29 | 2012-06-01 | Ind Tech Res Inst | Light emitting diode device and fabrication method thereof |
US7989153B2 (en) * | 2007-07-11 | 2011-08-02 | Qd Vision, Inc. | Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites |
WO2009011922A1 (en) * | 2007-07-18 | 2009-01-22 | Qd Vision, Inc. | Quantum dot-based light sheets useful for solid-state lighting |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
US7838889B2 (en) * | 2007-08-10 | 2010-11-23 | Eastman Kodak Company | Solid-state area illumination system |
US20090054752A1 (en) * | 2007-08-22 | 2009-02-26 | Motorola, Inc. | Method and apparatus for photoplethysmographic sensing |
US8128249B2 (en) | 2007-08-28 | 2012-03-06 | Qd Vision, Inc. | Apparatus for selectively backlighting a material |
US20090071155A1 (en) * | 2007-09-14 | 2009-03-19 | General Electric Company | Method and system for thermochemical heat energy storage and recovery |
US20090074355A1 (en) * | 2007-09-17 | 2009-03-19 | Beausoleil Raymond G | Photonically-coupled nanoparticle quantum systems and methods for fabricating the same |
CA2706975A1 (en) | 2007-10-24 | 2009-04-30 | Superbulbs, Inc. | Diffuser for led light sources |
US8784701B2 (en) | 2007-11-30 | 2014-07-22 | Nanoco Technologies Ltd. | Preparation of nanoparticle material |
JP5134618B2 (ja) * | 2007-12-18 | 2013-01-30 | Idec株式会社 | 波長変換器及び発光装置 |
US20090185113A1 (en) * | 2008-01-22 | 2009-07-23 | Industrial Technology Research Institute | Color Filter Module and Device of Having the Same |
KR101429704B1 (ko) * | 2008-01-31 | 2014-08-12 | 삼성디스플레이 주식회사 | 파장변환 부재, 이를 포함하는 광원 어셈블리 및 액정 표시장치 |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
CA2716552C (en) * | 2008-02-25 | 2016-02-02 | Nanoco Technologies Limited | Semiconductor nanoparticle capping agents |
KR101442146B1 (ko) * | 2008-02-25 | 2014-09-23 | 삼성디스플레이 주식회사 | 광원 유닛, 이를 포함하는 액정 표시 장치 및 이의 제조방법 |
WO2009145813A1 (en) | 2008-03-04 | 2009-12-03 | Qd Vision, Inc. | Particles including nanoparticles, uses thereof, and methods |
JP4911082B2 (ja) * | 2008-03-10 | 2012-04-04 | ソニー株式会社 | 表示装置および照明装置 |
EP2272304A2 (en) * | 2008-03-13 | 2011-01-12 | Nxp B.V. | Luminescent component and manufacturing method |
CN100559168C (zh) * | 2008-04-02 | 2009-11-11 | 中国科学院上海技术物理研究所 | 一种利用荧光光谱测量半导体量子点尺寸分布的方法 |
CN102047098B (zh) | 2008-04-03 | 2016-05-04 | Qd视光有限公司 | 包括量子点的发光器件 |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
US20090268461A1 (en) * | 2008-04-28 | 2009-10-29 | Deak David G | Photon energy conversion structure |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
WO2009151515A1 (en) | 2008-05-06 | 2009-12-17 | Qd Vision, Inc. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
US8076833B2 (en) * | 2008-06-30 | 2011-12-13 | Bridgelux, Inc. | Methods and apparatuses for enhancing heat dissipation from a light emitting device |
JP4805980B2 (ja) * | 2008-07-07 | 2011-11-02 | シャープ株式会社 | 発光装置及び蛍光体 |
US7888855B2 (en) * | 2008-07-16 | 2011-02-15 | Los Alamos National Security, Llc | Mixed semiconductor nanocrystal compositions |
GB0813273D0 (en) * | 2008-07-19 | 2008-08-27 | Nanoco Technologies Ltd | Method for producing aqueous compatible nanoparticles |
GB0814458D0 (en) * | 2008-08-07 | 2008-09-10 | Nanoco Technologies Ltd | Surface functionalised nanoparticles |
WO2010021676A1 (en) * | 2008-08-18 | 2010-02-25 | Superbulbs, Inc. | Anti-reflective coatings for light bulbs |
KR100982991B1 (ko) * | 2008-09-03 | 2010-09-17 | 삼성엘이디 주식회사 | 양자점 파장변환체, 양자점 파장변환체의 제조방법 및 양자점 파장변환체를 포함하는 발광장치 |
KR100982990B1 (ko) * | 2008-09-03 | 2010-09-17 | 삼성엘이디 주식회사 | 파장변환플레이트 및 이를 이용한 발광장치 |
US8412053B2 (en) * | 2008-10-07 | 2013-04-02 | The Boeing Company | Radioisotope powered light modulating communication devices |
KR101018111B1 (ko) * | 2008-10-07 | 2011-02-25 | 삼성엘이디 주식회사 | 양자점-금속산화물 복합체, 양자점-금속산화물 복합체의 제조방법 및 양자점-금속산화물 복합체를 포함하는 발광장치 |
US20100135009A1 (en) * | 2008-10-15 | 2010-06-03 | David Duncan | Custom color led replacements for traditional lighting fixtures |
US8634444B2 (en) * | 2008-10-16 | 2014-01-21 | The Boeing Company | Self-contained random scattering laser devices |
GB0820101D0 (en) * | 2008-11-04 | 2008-12-10 | Nanoco Technologies Ltd | Surface functionalised nanoparticles |
JP2012508464A (ja) * | 2008-11-07 | 2012-04-05 | アイディディ エアロスペイス コーポレイション | 照明システム |
US8164150B1 (en) | 2008-11-10 | 2012-04-24 | The Boeing Company | Quantum dot illumination devices and methods of use |
GB0821122D0 (en) * | 2008-11-19 | 2008-12-24 | Nanoco Technologies Ltd | Semiconductor nanoparticle - based light emitting devices and associated materials and methods |
US8360617B2 (en) * | 2008-11-25 | 2013-01-29 | Samsung Electronics Co., Ltd. | Lighting system including LED with glass-coated quantum-dots |
JP5483669B2 (ja) * | 2008-11-26 | 2014-05-07 | 昭和電工株式会社 | 液状硬化性樹脂組成物、ナノ粒子蛍光体を含む硬化樹脂の製造方法、発光装置の製造方法、発光装置及び照明装置 |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US7916065B1 (en) | 2008-12-12 | 2011-03-29 | Raytheon Company | Countermeasure system and method using quantum dots |
KR101462656B1 (ko) * | 2008-12-16 | 2014-11-17 | 삼성전자 주식회사 | 나노입자/블록공중합체 복합체의 제조방법 |
US8153984B2 (en) * | 2008-12-18 | 2012-04-10 | Eastman Kodak Company | Security system with different size emissive particles |
US10214686B2 (en) | 2008-12-30 | 2019-02-26 | Nanosys, Inc. | Methods for encapsulating nanocrystals and resulting compositions |
US11198270B2 (en) | 2008-12-30 | 2021-12-14 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
US8343575B2 (en) | 2008-12-30 | 2013-01-01 | Nanosys, Inc. | Methods for encapsulating nanocrystals and resulting compositions |
CN101477982B (zh) * | 2009-01-07 | 2011-08-17 | 苏州晶方半导体科技股份有限公司 | 光转换器及其制造方法和发光二极管 |
US20100314926A1 (en) * | 2009-01-09 | 2010-12-16 | Chesness Curtis J | Collapsible swivel chair |
US8111385B2 (en) * | 2009-01-26 | 2012-02-07 | The Boeing Company | Quantum dot-mediated optical fiber information retrieval systems and methods of use |
KR101631986B1 (ko) * | 2009-02-18 | 2016-06-21 | 삼성전자주식회사 | 도광판 및 이를 포함하는 디스플레이 장치 |
KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
WO2010129350A2 (en) | 2009-04-28 | 2010-11-11 | Qd Vision, Inc. | Optical materials, optical, components, devices, and methods |
EP2424941B1 (en) | 2009-05-01 | 2017-05-31 | Nanosys, Inc. | Functionalized matrixes for dispersion of nanostructures |
US8337030B2 (en) | 2009-05-13 | 2012-12-25 | Cree, Inc. | Solid state lighting devices having remote luminescent material-containing element, and lighting methods |
KR101644047B1 (ko) * | 2009-07-09 | 2016-08-01 | 삼성전자 주식회사 | 발광체-고분자 복합체용 조성물, 발광체-고분자 복합체 및 상기 발광체-고분자 복합체를 포함하는 발광 소자 |
US8350223B2 (en) * | 2009-07-31 | 2013-01-08 | Raytheon Company | Quantum dot based radiation source and radiometric calibrator using the same |
KR20120062773A (ko) | 2009-08-14 | 2012-06-14 | 큐디 비젼, 인크. | 조명 장치, 조명 장치용 광학 요소, 및 방법 |
US9380665B2 (en) | 2009-08-14 | 2016-06-28 | Once Innovations, Inc. | Spectral shift control for dimmable AC LED lighting |
US8373363B2 (en) | 2009-08-14 | 2013-02-12 | Once Innovations, Inc. | Reduction of harmonic distortion for LED loads |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
KR101865888B1 (ko) | 2009-09-09 | 2018-06-08 | 삼성전자주식회사 | 나노입자들을 포함하는 입자, 그의 용도, 및 방법 |
WO2011031876A1 (en) | 2009-09-09 | 2011-03-17 | Qd Vision, Inc. | Formulations including nanoparticles |
US9502612B2 (en) | 2009-09-20 | 2016-11-22 | Viagan Ltd. | Light emitting diode package with enhanced heat conduction |
GB0916700D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
GB0916699D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
KR101791580B1 (ko) | 2009-10-17 | 2017-10-30 | 삼성전자주식회사 | 광학 요소, 이를 포함한 제품, 및 그 제조 방법 |
EP3927120A1 (en) | 2009-10-29 | 2021-12-22 | Signify North America Corporation | Led lighting for livestock development |
US9700650B2 (en) | 2009-11-09 | 2017-07-11 | Spotlight Technology Partners Llc | Polysaccharide based hydrogels |
US8795727B2 (en) | 2009-11-09 | 2014-08-05 | Spotlight Technology Partners Llc | Fragmented hydrogels |
CA2781043A1 (en) * | 2009-11-16 | 2011-05-19 | Emory University | Lattice-mismatched core-shell quantum dots |
KR101489390B1 (ko) | 2009-12-15 | 2015-02-03 | 엘지이노텍 주식회사 | 양자점을 이용한 백라이트 유닛 |
TWI398700B (zh) * | 2009-12-30 | 2013-06-11 | Au Optronics Corp | 使用量子點螢光粉之顯示裝置及其製造方法 |
JP5828154B2 (ja) | 2010-01-28 | 2015-12-02 | イサム・リサーチ・デベロツプメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシテイ・オブ・エルサレム・リミテッド | 規定色放射を有する照明デバイス |
KR100969100B1 (ko) | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
AU2011217862B9 (en) | 2010-02-19 | 2014-07-10 | Pacific Biosciences Of California, Inc. | Integrated analytical system and method |
JP4949525B2 (ja) * | 2010-03-03 | 2012-06-13 | シャープ株式会社 | 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法 |
US8530883B2 (en) * | 2010-03-11 | 2013-09-10 | Light-Based Technologies Incorporated | Manufacture of quantum dot-enabled solid-state light emitters |
US9482397B2 (en) | 2010-03-17 | 2016-11-01 | Once Innovations, Inc. | Light sources adapted to spectral sensitivity of diurnal avians and humans |
CN102884370B (zh) * | 2010-03-17 | 2017-03-22 | 万斯创新公司 | 适配用于昼间鸟和人类的光谱灵敏度的光源 |
KR101744904B1 (ko) | 2010-03-22 | 2017-06-21 | 삼성디스플레이 주식회사 | 양자점-블록공중합체 하이브리드 및 이의 제조 방법과 분산 방법, 그리고 양자점 블록공중합체 하이브리드를 포함하는 발광 소자 및 이의 제조 방법 |
KR20110108954A (ko) * | 2010-03-30 | 2011-10-06 | 삼성전자주식회사 | 반도체 나노 결정 및 그 제조 방법 |
KR101683270B1 (ko) | 2010-03-31 | 2016-12-21 | 삼성전자 주식회사 | 백색 발광 다이오드를 포함하는 액정 디스플레이 장치 |
GB201005601D0 (en) | 2010-04-01 | 2010-05-19 | Nanoco Technologies Ltd | Ecapsulated nanoparticles |
US8983039B2 (en) | 2010-05-05 | 2015-03-17 | Suinno Oy | Caller ID surfing |
US9382470B2 (en) | 2010-07-01 | 2016-07-05 | Samsung Electronics Co., Ltd. | Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same |
JP5801886B2 (ja) * | 2010-07-01 | 2015-10-28 | サムスン エレクトロニクス カンパニー リミテッド | 発光粒子−高分子複合体用の組成物、発光粒子−高分子複合体およびこれを含む素子 |
US8702277B2 (en) | 2010-07-12 | 2014-04-22 | Samsung Electronics Co., Ltd. | White light emitting diode and liquid crystal display including the same |
US8735791B2 (en) | 2010-07-13 | 2014-05-27 | Svv Technology Innovations, Inc. | Light harvesting system employing microstructures for efficient light trapping |
JP2012036265A (ja) * | 2010-08-05 | 2012-02-23 | Sharp Corp | 照明装置 |
US20120113671A1 (en) * | 2010-08-11 | 2012-05-10 | Sridhar Sadasivan | Quantum dot based lighting |
US9614129B2 (en) * | 2010-08-14 | 2017-04-04 | Seoul Semiconductor Co., Ltd. | Light emitting device having surface-modified luminophores |
TW201214767A (en) * | 2010-09-27 | 2012-04-01 | Univ Chung Yuan Christian | White light emitting diode |
US9648673B2 (en) | 2010-11-05 | 2017-05-09 | Cree, Inc. | Lighting device with spatially segregated primary and secondary emitters |
EP2638321B1 (en) | 2010-11-10 | 2019-05-08 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
KR101295119B1 (ko) * | 2010-11-10 | 2013-08-12 | 삼성전자주식회사 | 발광모듈 |
US20150188002A1 (en) * | 2010-11-11 | 2015-07-02 | Auterra, Inc. | Light emitting devices having rare earth and transition metal activated phosphors and applications thereof |
TWI493756B (zh) * | 2010-11-15 | 2015-07-21 | Epistar Corp | 發光元件 |
KR20120054484A (ko) * | 2010-11-19 | 2012-05-30 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이의 제조방법 |
EP2698056B1 (en) * | 2010-12-21 | 2015-04-29 | Valoya Oy | Method and means for acclimatizing seedlings for outdoor life |
EP2655961A4 (en) | 2010-12-23 | 2014-09-03 | Qd Vision Inc | OPTICAL ELEMENT CONTAINING QUANTUM POINTS |
US8474916B2 (en) | 2011-01-14 | 2013-07-02 | Smithworks, Inc. | Selectively configurable chair system |
US8324815B2 (en) | 2011-01-24 | 2012-12-04 | Biological Illumination, Llc | LED lighting system |
JP5937521B2 (ja) * | 2011-01-28 | 2016-06-22 | 昭和電工株式会社 | 量子ドット蛍光体を含む組成物、量子ドット蛍光体分散樹脂成形体、量子ドット蛍光体を含む構造物、発光装置、電子機器、機械装置及び量子ドット蛍光体分散樹脂成形体の製造方法 |
JP5827578B2 (ja) * | 2011-02-14 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 光学素子の作製方法 |
US8742654B2 (en) * | 2011-02-25 | 2014-06-03 | Cree, Inc. | Solid state light emitting devices including nonhomogeneous luminophoric particle size layers |
CN102683514B (zh) | 2011-03-06 | 2017-07-14 | 维亚甘有限公司 | 发光二极管封装和制造方法 |
EP2499900A1 (en) * | 2011-03-17 | 2012-09-19 | Valoya Oy | Method and means for enhancing greenhouse lights |
DE11158693T8 (de) | 2011-03-17 | 2013-04-25 | Valoya Oy | Pflanzenbeleuchtungsvorrichtung und Verfahren |
ES2616308T3 (es) | 2011-03-17 | 2017-06-12 | Valoya Oy | Método para cámaras de crecimiento oscuras |
AU2015213403B2 (en) * | 2011-03-17 | 2017-04-13 | Valoya Oy | Plant illumination device and method for dark growth chambers |
KR101822537B1 (ko) | 2011-03-31 | 2018-01-29 | 삼성디스플레이 주식회사 | 발광 다이오드 패키지, 이의 제조 방법, 및 이를 갖는 표시 장치 |
US9412905B2 (en) | 2011-04-01 | 2016-08-09 | Najing Technology Corporation Limited | White light emitting device |
US8957438B2 (en) | 2011-04-07 | 2015-02-17 | Cree, Inc. | Methods of fabricating light emitting devices including multiple sequenced luminophoric layers |
KR20120115896A (ko) * | 2011-04-11 | 2012-10-19 | 삼성디스플레이 주식회사 | 발광 유닛 및 이를 포함하는 표시 장치 |
US8508830B1 (en) | 2011-05-13 | 2013-08-13 | Google Inc. | Quantum dot near-to-eye display |
KR101273099B1 (ko) | 2011-05-24 | 2013-06-13 | 엘지이노텍 주식회사 | 광학 시트, 이를 포함하는 표시장치 및 이의 제조방법 |
EP2532224A1 (en) * | 2011-06-10 | 2012-12-12 | Valoya Oy | Method and means for improving plant productivity through enhancing insect pollination success in plant cultivation |
KR101771175B1 (ko) * | 2011-06-10 | 2017-09-06 | 삼성전자주식회사 | 광전자 소자 및 적층 구조 |
EP2721652B1 (en) * | 2011-06-20 | 2019-05-08 | Crystalplex Corporation | Quantum dot containing light module |
TWI442139B (zh) * | 2011-07-21 | 2014-06-21 | Au Optronics Corp | 液晶顯示裝置 |
TWI505515B (zh) * | 2011-08-19 | 2015-10-21 | Epistar Corp | 發光裝置及其製造方法 |
CN102339937B (zh) * | 2011-09-26 | 2013-06-12 | 南京工业大学 | 一种利用量子点荧光粉制造的白光led及其制备方法 |
WO2013052541A2 (en) | 2011-10-04 | 2013-04-11 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Quantum dots, rods, wires, sheets, and ribbons, and uses thereof |
US9097826B2 (en) | 2011-10-08 | 2015-08-04 | Svv Technology Innovations, Inc. | Collimating illumination systems employing a waveguide |
KR20130046974A (ko) * | 2011-10-28 | 2013-05-08 | 엘지이노텍 주식회사 | 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법 |
US20130112942A1 (en) | 2011-11-09 | 2013-05-09 | Juanita Kurtin | Composite having semiconductor structures embedded in a matrix |
US9159872B2 (en) | 2011-11-09 | 2015-10-13 | Pacific Light Technologies Corp. | Semiconductor structure having nanocrystalline core and nanocrystalline shell |
CN102368583B (zh) * | 2011-11-15 | 2013-01-23 | 浙江工业大学 | 一种提高固体激光器泵浦利用效率的方法及其产品 |
WO2013078251A1 (en) * | 2011-11-22 | 2013-05-30 | Qd Vision, Inc. | Stress-resistant component for use with quantum dots |
WO2013082516A1 (en) * | 2011-11-30 | 2013-06-06 | University Of Washington Through Its Center For Commercialization | Surface-passivated silicon quantum dot phosphors |
CN102492068B (zh) * | 2011-12-09 | 2015-02-25 | 江苏康纳思光电科技有限公司 | 一种大分子单体修饰的量子点、制备方法及其应用 |
KR101575139B1 (ko) | 2011-12-09 | 2015-12-08 | 삼성전자주식회사 | 백라이트 유닛 및 이를 포함하는 액정 디스플레이 장치 |
FR2988223B1 (fr) | 2012-03-19 | 2016-09-02 | Solarwell | Dispositif emettant de la lumiere contenant des nanocristaux colloidaux semiconducteurs anisotropes aplatis et procede de fabrication de tels dispositifs |
WO2013140083A1 (fr) | 2012-03-19 | 2013-09-26 | Solarwell | Dispositif émettant de la lumière contenant des nanocristaux colloïdaux semi-conducteurs anisotropes aplatis et procédés de fabrication de tels dispositifs |
US9362719B2 (en) | 2012-03-30 | 2016-06-07 | The Regents Of The University Of Michigan | GaN-based quantum dot visible laser |
KR101546937B1 (ko) | 2012-04-04 | 2015-08-25 | 삼성전자 주식회사 | 백라이트 유닛용 필름 및 이를 포함하는 백라이트 유닛과 액정 디스플레이 장치 |
JP6192897B2 (ja) | 2012-04-11 | 2017-09-06 | サターン ライセンシング エルエルシーSaturn Licensing LLC | 発光装置、表示装置および照明装置 |
JP5939004B2 (ja) | 2012-04-11 | 2016-06-22 | ソニー株式会社 | 発光装置、表示装置および照明装置 |
CN104221172B (zh) | 2012-04-13 | 2019-03-01 | 亮锐控股有限公司 | 光转换组件、灯和灯具 |
CN103375708B (zh) * | 2012-04-26 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
US9929325B2 (en) | 2012-06-05 | 2018-03-27 | Samsung Electronics Co., Ltd. | Lighting device including quantum dots |
US9024526B1 (en) | 2012-06-11 | 2015-05-05 | Imaging Systems Technology, Inc. | Detector element with antenna |
US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
US9685585B2 (en) * | 2012-06-25 | 2017-06-20 | Cree, Inc. | Quantum dot narrow-band downconverters for high efficiency LEDs |
TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
WO2014018021A1 (en) | 2012-07-24 | 2014-01-30 | Empire Technology Development Llc | Solution phase polydiacetylene synthesis by alkyne metathesis |
KR20140025161A (ko) * | 2012-08-21 | 2014-03-04 | 삼성전자주식회사 | 양자점 소자 제조 방법, 이에 의해 제조된 양자점 소자 및 양자점 소자의 전하 이동도 측정 방법 |
JP2014056896A (ja) * | 2012-09-11 | 2014-03-27 | Ns Materials Kk | 半導体を利用した発光デバイス及びその製造方法 |
CN104735975B (zh) * | 2012-09-21 | 2018-01-16 | 万斯创新公司 | 适用于昼行性禽类和人类的光谱灵敏度的光源 |
DE102012109217A1 (de) * | 2012-09-28 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Beleuchtungsvorrichtung zum Erzeugen einer Lichtemission und Verfahren zum Erzeugen einer Lichtemission |
US8889457B2 (en) | 2012-12-13 | 2014-11-18 | Pacific Light Technologies Corp. | Composition having dispersion of nano-particles therein and methods of fabricating same |
US8900897B2 (en) | 2013-01-10 | 2014-12-02 | Intermolecular, Inc. | Material with tunable index of refraction |
BR112015016408B1 (pt) | 2013-01-11 | 2020-11-10 | Philips Lighting Holding B.V. | dispositivo de iluminação de horticultura; método para estimular o crescimento vegetal e biorritmo de uma planta; luminária; e aplicação de horticultura |
US9880149B2 (en) * | 2013-02-08 | 2018-01-30 | The United States Of America, As Represented By The Secretary Of The Navy | Coatings of semiconductor quantum dots for improved visibility of electrodes and pipettes |
US10656319B2 (en) * | 2013-02-28 | 2020-05-19 | Ns Materials Inc. | Liquid crystal display device |
US9142732B2 (en) | 2013-03-04 | 2015-09-22 | Osram Sylvania Inc. | LED lamp with quantum dots layer |
JP6283092B2 (ja) | 2013-03-14 | 2018-02-21 | ナノシス・インク. | 多面体オリゴマー状シルセスキオキサンナノ結晶安定化リガンド |
WO2014159860A1 (en) | 2013-03-14 | 2014-10-02 | Nanosys, Inc. | Alkyl-acid ligands for nanocrystals |
KR102203599B1 (ko) | 2013-03-14 | 2021-01-14 | 나노시스, 인크. | 무용매 양자점 교환 방법 |
KR20140113046A (ko) | 2013-03-15 | 2014-09-24 | 삼성디스플레이 주식회사 | 표시 장치 |
EP2984686B1 (en) * | 2013-04-08 | 2020-07-08 | Lumileds Holding B.V. | Method of fabricating led with high thermal conductivity particles in phosphor conversion layer |
KR102075713B1 (ko) * | 2013-07-15 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
CN109600884B (zh) | 2013-08-02 | 2021-02-12 | 昕诺飞北美公司 | 对家畜进行照明的系统和方法 |
KR102108994B1 (ko) * | 2013-08-30 | 2020-05-12 | 삼성전자주식회사 | 광 변환 소자 및 그 제조 방법, 그리고 이를 포함하는 광원 유닛 |
US11746290B2 (en) | 2013-09-26 | 2023-09-05 | Samsung Electronics Co., Ltd. | Nanocrystal particles and processes for synthesizing the same |
WO2015065133A1 (ko) | 2013-11-04 | 2015-05-07 | 조승래 | 입자를 이용한 열 차단 시스템 |
WO2015065134A1 (ko) | 2013-11-04 | 2015-05-07 | 조승래 | 공동들을 이용한 열 차단 시스템용 다중층 코팅 시스템 및 그 제조방법 |
US9372291B2 (en) | 2013-11-04 | 2016-06-21 | Sung Nae CHO | Heat blocking system utilizing particulates |
US9335023B2 (en) * | 2013-12-11 | 2016-05-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Quantum dot lens and manufacturing method thereof |
DE102014102848A1 (de) | 2013-12-19 | 2015-06-25 | Osram Gmbh | Konversionselement, Verfahren zur Herstellung eines Konversionselements, optoelektronisches Bauelement umfassend ein Konversionselement |
US9988559B2 (en) | 2013-12-20 | 2018-06-05 | 3M Innovative Properties Company | Quantum dot article with improved edge ingress |
US10206378B2 (en) | 2014-01-07 | 2019-02-19 | Once Innovations, Inc. | System and method of enhancing swine reproduction |
US9247603B2 (en) | 2014-02-11 | 2016-01-26 | Once Innovations, Inc. | Shunt regulator for spectral shift controlled light source |
JP2016108412A (ja) * | 2014-12-04 | 2016-06-20 | シャープ株式会社 | 半導体ナノ粒子蛍光体、波長変換部および発光装置 |
KR20150129232A (ko) | 2014-05-09 | 2015-11-19 | 삼성디스플레이 주식회사 | 백라이트 유닛 및 이를 포함하는 표시 장치 |
CN106661229B (zh) | 2014-07-16 | 2021-02-09 | 纳米系统公司 | 用于量子点的有机硅配体 |
EP3217444A4 (en) * | 2014-11-04 | 2018-08-22 | NS Materials Inc. | Wavelength conversion member, light-emitting device in which same is used, light-emitting element, light-source device, display device, light guide member, and method for manufacturing wavelength conversion member |
CN104409592A (zh) * | 2014-11-26 | 2015-03-11 | 京东方科技集团股份有限公司 | Led、导光板、背光模组和显示装置 |
US9620686B2 (en) * | 2015-01-28 | 2017-04-11 | Apple Inc. | Display light sources with quantum dots |
JP6448397B2 (ja) | 2015-02-02 | 2019-01-09 | 富士フイルム株式会社 | 蛍光体分散組成物及びそれを用いて得られた蛍光成形体、波長変換膜、波長変換部材、バックライトユニット、液晶表示装置 |
KR102319111B1 (ko) | 2015-03-30 | 2021-11-01 | 삼성디스플레이 주식회사 | 발광 소자 |
WO2016162233A1 (en) * | 2015-04-07 | 2016-10-13 | Philips Lighting Holding B.V. | Lighting device for colored light |
US9943042B2 (en) | 2015-05-18 | 2018-04-17 | Biological Innovation & Optimization Systems, LLC | Grow light embodying power delivery and data communications features |
EP3297770B1 (en) * | 2015-05-20 | 2023-08-30 | OSRAM Opto Semiconductors GmbH | Insulator-coated quantum dots for use in led lighting and display devices |
EP3320568B1 (en) * | 2015-07-07 | 2021-03-24 | Lumileds LLC | Device for emitting light and a method for its fabrication |
US20180254363A1 (en) * | 2015-08-31 | 2018-09-06 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
WO2017044597A1 (en) | 2015-09-09 | 2017-03-16 | Truskier Jonathan | Highly luminescent cadmium-free nanocrystals with blue emission |
US9844116B2 (en) | 2015-09-15 | 2017-12-12 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
US9788387B2 (en) | 2015-09-15 | 2017-10-10 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
US20180267365A1 (en) * | 2015-09-24 | 2018-09-20 | 3M Innovative Properties Company | Matrix for quantum dot articles |
KR102512555B1 (ko) * | 2015-10-15 | 2023-03-21 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 포함하는 발광소자 패키지 |
DE102015117940A1 (de) | 2015-10-21 | 2017-04-27 | Osram Opto Semiconductors Gmbh | Optischer Sensor |
US10597580B2 (en) | 2015-10-28 | 2020-03-24 | Samsung Electronics Co., Ltd. | Quantum dots, production methods thereof, and electronic devices including the same |
KR102447309B1 (ko) * | 2015-12-24 | 2022-09-26 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
KR102444177B1 (ko) * | 2015-12-28 | 2022-09-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR102653473B1 (ko) | 2015-12-29 | 2024-04-01 | 삼성전자주식회사 | 양자점을 포함하는 전자 소자 |
JP2019504811A (ja) | 2016-01-19 | 2019-02-21 | ナノシス・インク. | GaPおよびAlPシェルを有するInP量子ドット、ならびにその製造方法 |
EP3208291A1 (en) * | 2016-02-16 | 2017-08-23 | Henkel AG & Co. KGaA | Nanocrystal epoxy thiol composite material and nanocrystal epoxy thiol composite film |
US20170250322A1 (en) * | 2016-02-26 | 2017-08-31 | Nanosys, Inc. | Low Cadmium Content Nanostructure Compositions and Uses Thereof |
BR112018069831A2 (pt) | 2016-03-29 | 2019-01-29 | Once Innovations Inc | sistema de controle para iluminação de suínos e método de estimulação de uma resposta biológica em suínos |
CN105870302B (zh) * | 2016-03-30 | 2019-01-29 | 深圳市聚飞光电股份有限公司 | 一种高色域白光量子点led的封装方法 |
KR102367208B1 (ko) | 2016-04-26 | 2022-02-23 | 나노시스, 인크. | 두꺼운 쉘 코팅을 갖는 안정된 inp 양자점 및 그 제조 방법 |
EP3242333B1 (en) * | 2016-05-03 | 2020-09-09 | Nokia Technologies Oy | An apparatus and method of forming an apparatus comprising a graphene field effect transistor |
KR102529150B1 (ko) | 2016-05-11 | 2023-05-03 | 삼성전자주식회사 | 광 변환 장치, 그 제조 방법, 및 이를 포함하는 광원 모듈과 백라이트 유닛 |
KR102481314B1 (ko) | 2016-05-19 | 2022-12-23 | 나노시스, 인크. | 고 발광성 나노구조체를 위한 코어/쉘 양자점의 형태를 개선하기 위한 방법 |
CA3026102A1 (en) | 2016-06-06 | 2017-12-14 | Nanosys, Inc. | Method for synthesizing core shell nanocrystals at high temperatures |
WO2018005195A1 (en) | 2016-06-27 | 2018-01-04 | Nanosys, Inc. | Methods for buffered coating of nanostructures |
JP2019535840A (ja) * | 2016-08-22 | 2019-12-12 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 光学デバイスのための混合物 |
US10595376B2 (en) | 2016-09-13 | 2020-03-17 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
US10314125B2 (en) | 2016-09-30 | 2019-06-04 | Once Innovations, Inc. | Dimmable analog AC circuit |
CN106356463B (zh) * | 2016-10-11 | 2017-12-29 | 深圳市华星光电技术有限公司 | Qled显示装置的制作方法 |
JP6698510B2 (ja) * | 2016-12-19 | 2020-05-27 | 富士フイルム株式会社 | 波長変換フィルムおよびバックライトユニット |
CA3044503A1 (en) * | 2016-12-23 | 2018-06-28 | Universiteit Gent | Quantum dots with a iii-v core and an alloyed ii-vi external shell |
KR20180087487A (ko) | 2017-01-23 | 2018-08-02 | 삼성디스플레이 주식회사 | 파장 변환 부재 및 이를 포함하는 백라이트 유닛 |
US10325963B2 (en) | 2017-02-24 | 2019-06-18 | Innolux Corporation | Display device |
US20180334090A1 (en) * | 2017-05-19 | 2018-11-22 | Ford Global Technologies, Llc | Brake component illuminator and illumination method |
US10768485B2 (en) * | 2017-07-05 | 2020-09-08 | Nanoco Technologies Ltd. | Quantum dot architectures for color filter applications |
TWI702362B (zh) * | 2017-07-13 | 2020-08-21 | 東貝光電科技股份有限公司 | Led發光裝置 |
CN107619485A (zh) * | 2017-09-08 | 2018-01-23 | 福建师范大学 | 无机钙钛矿量子点间规聚苯乙烯复合薄膜及其制备方法 |
US10711188B2 (en) | 2017-09-21 | 2020-07-14 | Raytheon Company | Process for producing quantum dots having broadened optical emission |
WO2019074803A1 (en) * | 2017-10-11 | 2019-04-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | FABRICATION OF LUMINESCENT QUANTIC POINT THIOL-YNE NANOCOMPOSITES HAVING MODULAR OPTICAL, THERMIC AND MECHANICAL PROPERTIES |
KR20200074197A (ko) | 2017-10-25 | 2020-06-24 | 나노시스, 인크. | 두꺼운 쉘 코팅을 갖는 안정적인 InP 양자 도트들 및 그것을 제조하는 방법 |
US20190273178A1 (en) | 2018-03-05 | 2019-09-05 | Nanosys, Inc. | Decreased Photon Reabsorption in Emissive Quantum Dots |
DE102018112585B4 (de) * | 2018-05-25 | 2023-12-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Konverter mit quantenpunkten, bauelement mit konverter und verfahren zur herstellung |
JP7357185B2 (ja) | 2018-05-30 | 2023-10-06 | ナノシス・インク. | 青色発光ZnSe1-xTex合金ナノ結晶の合成方法 |
KR20200002692A (ko) | 2018-06-29 | 2020-01-08 | 나노시스, 인크. | 도펀트들로서 In3+ 염들을 이용한 ZnSe 양자 도트들의 파장 튜닝 |
US11204444B2 (en) | 2018-08-24 | 2021-12-21 | Consolidated Nuclear Security, LLC | Quantum dot lightning detection and warning system and method |
JP6975122B2 (ja) | 2018-11-06 | 2021-12-01 | 信越化学工業株式会社 | 樹脂組成物、波長変換材料、波長変換フィルム、led素子、バックライトユニット及び画像表示装置 |
JP7269728B2 (ja) * | 2018-12-25 | 2023-05-09 | 東京応化工業株式会社 | 量子ドット分散液の製造方法、及び量子ドット分散液 |
WO2020163075A1 (en) | 2019-02-05 | 2020-08-13 | Nanosys, Inc. | Methods for synthesis of inorganic nanostructures using molten salt chemistry |
CN110989242A (zh) * | 2019-12-06 | 2020-04-10 | Tcl华星光电技术有限公司 | 背光模组和显示装置 |
WO2021141945A1 (en) | 2020-01-06 | 2021-07-15 | Nanosys, Inc. | Rohs compliant mixed quantum dot films |
WO2023141438A1 (en) | 2022-01-19 | 2023-07-27 | Nanosys, Inc. | Uv-curable quantum dot formulations |
EP4231366A1 (en) | 2022-02-21 | 2023-08-23 | ETH Zurich | An integrated circuit comprising a resistive switching section |
US11784805B2 (en) | 2022-03-07 | 2023-10-10 | Raytheon Company | Ultra high entropy material-based non-reversible spectral signature generation via quantum dots |
WO2023183619A1 (en) | 2022-03-25 | 2023-09-28 | Nanosys, Inc. | Silica composite microparticles comprising nanostructures |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0524826A (ja) * | 1991-07-22 | 1993-02-02 | Mitsui Toatsu Chem Inc | 半導体超微粒子の製造方法および組成物 |
JPH05152609A (ja) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | 発光ダイオード |
JPH06314560A (ja) * | 1993-05-04 | 1994-11-08 | Motorola Inc | 量子含有粒子スクリーンを有する蛍光装置およびその製造方法 |
JPH07218938A (ja) * | 1994-02-08 | 1995-08-18 | Asahi Chem Ind Co Ltd | 加工性に優れた非線形光学材料 |
JPH0950057A (ja) * | 1995-05-31 | 1997-02-18 | Mitsui Toatsu Chem Inc | 半導体超微粒子含有ポリマー粒子 |
JPH10270799A (ja) * | 1997-03-21 | 1998-10-09 | Sanyo Electric Co Ltd | 発光素子 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3125332B2 (ja) | 1991-06-21 | 2001-01-15 | ソニー株式会社 | 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法 |
US5505928A (en) | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
EP0613585A4 (en) | 1991-11-22 | 1995-06-21 | Univ California | SEMICONDUCTOR NANOCRYSTALS COVALENTLY LINKED TO SOLID INORGANIC SURFACES USING SELF-ASSEMBLED MONO-LAYERS. |
US5260957A (en) * | 1992-10-29 | 1993-11-09 | The Charles Stark Draper Laboratory, Inc. | Quantum dot Laser |
US5293050A (en) | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
EP0622439A1 (en) * | 1993-04-20 | 1994-11-02 | Koninklijke Philips Electronics N.V. | Quantum sized activator doped semiconductor particles |
US6048616A (en) * | 1993-04-21 | 2000-04-11 | Philips Electronics N.A. Corp. | Encapsulated quantum sized doped semiconductor particles and method of manufacturing same |
US5422489A (en) | 1994-01-24 | 1995-06-06 | Bhargava; Rameshwar N. | Light emitting device |
US5448582A (en) * | 1994-03-18 | 1995-09-05 | Brown University Research Foundation | Optical sources having a strongly scattering gain medium providing laser-like action |
US5881200A (en) | 1994-09-29 | 1999-03-09 | British Telecommunications Public Limited Company | Optical fibre with quantum dots |
US5585640A (en) * | 1995-01-11 | 1996-12-17 | Huston; Alan L. | Glass matrix doped with activated luminescent nanocrystalline particles |
US5650787A (en) * | 1995-05-24 | 1997-07-22 | Hughes Electronics | Scanning antenna with solid rotating anisotropic core |
US5932309A (en) * | 1995-09-28 | 1999-08-03 | Alliedsignal Inc. | Colored articles and compositions and methods for their fabrication |
JPH09281900A (ja) * | 1996-01-08 | 1997-10-31 | Toray Ind Inc | 自発光ディスプレイ |
ATE332572T1 (de) * | 1996-06-19 | 2006-07-15 | Matsushita Electric Ind Co Ltd | Photoelektronisches material, dieses verwendende vorrichtungen und herstellungsverfahren |
DE29724848U1 (de) * | 1996-06-26 | 2004-09-30 | Osram Opto Semiconductors Gmbh | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP3266072B2 (ja) * | 1997-10-14 | 2002-03-18 | 富士電機株式会社 | 多色発光有機エレクトロルミネッセンス素子の製造方法 |
US6322901B1 (en) * | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US6005707A (en) * | 1997-11-21 | 1999-12-21 | Lucent Technologies Inc. | Optical devices comprising polymer-dispersed crystalline materials |
US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
WO2000017903A2 (en) * | 1998-09-22 | 2000-03-30 | Fed Corporation | Inorganic-based color conversion matrix element for organic color display devices and method of fabrication |
US6221602B1 (en) * | 1998-11-10 | 2001-04-24 | Bio-Pixels Ltd. | Functionalized nanocrystals and their use in labeling for strand synthesis or sequence determination |
-
1998
- 1998-10-07 US US09/167,795 patent/US6501091B1/en not_active Expired - Lifetime
-
1999
- 1999-04-01 EP EP10180634.7A patent/EP2325897B1/en not_active Expired - Lifetime
- 1999-04-01 WO PCT/US1999/007219 patent/WO1999050916A1/en active Application Filing
- 1999-04-01 EP EP99915206.9A patent/EP1070355B1/en not_active Expired - Lifetime
- 1999-04-01 JP JP2000541740A patent/JP5031141B2/ja not_active Expired - Lifetime
- 1999-04-01 EP EP10180612.3A patent/EP2309557B1/en not_active Expired - Lifetime
- 1999-07-09 US US09/350,956 patent/US6803719B1/en not_active Expired - Lifetime
-
2002
- 2002-12-26 US US10/329,909 patent/US6914265B2/en not_active Expired - Lifetime
- 2002-12-26 US US10/329,596 patent/US6890777B2/en not_active Expired - Lifetime
-
2004
- 2004-06-25 US US10/877,698 patent/US7264527B2/en not_active Expired - Lifetime
-
2007
- 2007-04-13 US US11/787,152 patent/US7692373B2/en not_active Expired - Lifetime
-
2010
- 2010-02-04 US US12/700,711 patent/US8053972B2/en not_active Expired - Fee Related
- 2010-02-04 US US12/700,709 patent/US20100141118A1/en not_active Abandoned
- 2010-02-04 US US12/700,713 patent/US20100176715A1/en not_active Abandoned
-
2011
- 2011-02-28 JP JP2011042580A patent/JP2011142336A/ja active Pending
- 2011-08-11 US US13/208,169 patent/US8174181B2/en not_active Expired - Fee Related
-
2012
- 2012-05-07 US US13/465,553 patent/US8362684B2/en not_active Expired - Fee Related
-
2013
- 2013-01-17 US US13/743,983 patent/US20130207073A1/en not_active Abandoned
-
2014
- 2014-05-07 JP JP2014096216A patent/JP6092809B2/ja not_active Expired - Lifetime
-
2015
- 2015-12-25 JP JP2015254999A patent/JP2016114949A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0524826A (ja) * | 1991-07-22 | 1993-02-02 | Mitsui Toatsu Chem Inc | 半導体超微粒子の製造方法および組成物 |
JPH05152609A (ja) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | 発光ダイオード |
JPH06314560A (ja) * | 1993-05-04 | 1994-11-08 | Motorola Inc | 量子含有粒子スクリーンを有する蛍光装置およびその製造方法 |
JPH07218938A (ja) * | 1994-02-08 | 1995-08-18 | Asahi Chem Ind Co Ltd | 加工性に優れた非線形光学材料 |
JPH0950057A (ja) * | 1995-05-31 | 1997-02-18 | Mitsui Toatsu Chem Inc | 半導体超微粒子含有ポリマー粒子 |
JPH10270799A (ja) * | 1997-03-21 | 1998-10-09 | Sanyo Electric Co Ltd | 発光素子 |
Non-Patent Citations (2)
Title |
---|
JPN. J. APPL. PHYS., VOL.35(1996), PART 1, NO.9A, PP.4633-4638, JPN7009004989, ISSN: 0002495190 * |
THE JOURNAL OF PHYSICAL CHEMISTRY,VOL.96(1992),NO.13,PP.5546-5552, JPN7009004990, ISSN: 0002495191 * |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014531305A (ja) * | 2011-09-13 | 2014-11-27 | エンパイア テクノロジー ディベロップメント エルエルシー | ナノ吸着剤及びそれらの使用方法 |
JP2015516467A (ja) * | 2012-02-03 | 2015-06-11 | コーニンクレッカ フィリップス エヌ ヴェ | 新規材料並びに高量子収率及び高安定性を有するナノ粒子のマトリックス中への分散方法 |
US9701897B2 (en) | 2012-02-03 | 2017-07-11 | Koninklijke Philips N.V. | Materials and methods for dispersing nano particles in matrices with high quantum yields and stability |
WO2013137689A1 (ko) * | 2012-03-16 | 2013-09-19 | 세종대학교산학협력단 | 마이크로 캡슐형 양자점- 고분자 복합체, 상기 복합체의 제조 방법, 광학요소들, 및 상기 광학요소들의 제조방법 |
KR101319728B1 (ko) * | 2012-03-16 | 2013-10-18 | 세종대학교산학협력단 | 마이크로 캡슐형 양자점- 고분자 복합체, 상기 복합체의 제조 방법, 상기 복합체를 포함하는 발광다이오드 패키지, 및 상기 발광다이오드 패키지의 제조방법 |
US10069044B2 (en) | 2012-03-16 | 2018-09-04 | Industry-Academia Cooperation Group Of Sejong Univ | Microcapsular quantum dot-polymer composite, method for producing the composite, optical elements, and method for producing the optical elements |
US9786823B2 (en) | 2013-07-08 | 2017-10-10 | Ns Materials Inc. | Light-emitting device with sealing member comprising zinc sulfide particles |
US9577160B2 (en) | 2015-04-21 | 2017-02-21 | Sharp Kabushiki Kaisha | Light-emitting device and image display |
KR20160138901A (ko) | 2015-05-26 | 2016-12-06 | 샤프 가부시키가이샤 | 발광 장치 및 화상 표시 장치 |
US9812617B2 (en) | 2015-05-26 | 2017-11-07 | Sharp Kabushiki Kaisha | Light-emitting device and image display apparatus |
US10263162B2 (en) | 2017-02-21 | 2019-04-16 | Sharp Kabushiki Kaisha | Light emitting device and image displaying system |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6092809B2 (ja) | プレポリマ組成物、発光デバイスを準備するための方法及び発光デバイス | |
KR101519509B1 (ko) | 형광체-나노입자 조합물 | |
TWI620342B (zh) | 塗布半導體奈米晶體之方法、半導體奈米晶體及其產物 | |
CN111201301A (zh) | 经均匀封裝之纳米颗粒及其用途 | |
US20070012928A1 (en) | Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors | |
US20080173886A1 (en) | Solid state lighting devices comprising quantum dots | |
US20120195340A1 (en) | Solid state lighting devices comprising quantum dots | |
US11053435B2 (en) | Quantum dot (QD) delivery method | |
KR100712201B1 (ko) | 프라세오디뮴과 망간이 도핑된 황화아연 나노입자 백색광재료 제조 방법 및 발광효율 증대 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110329 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110516 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130402 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130628 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20130628 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131002 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140507 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140514 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140718 |