JP2013211537A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2013211537A JP2013211537A JP2013035320A JP2013035320A JP2013211537A JP 2013211537 A JP2013211537 A JP 2013211537A JP 2013035320 A JP2013035320 A JP 2013035320A JP 2013035320 A JP2013035320 A JP 2013035320A JP 2013211537 A JP2013211537 A JP 2013211537A
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- Prior art keywords
- layer
- transistor
- semiconductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Noodles (AREA)
- Credit Cards Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013035320A JP2013211537A (ja) | 2012-02-29 | 2013-02-26 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012044109 | 2012-02-29 | ||
| JP2012044109 | 2012-02-29 | ||
| JP2013035320A JP2013211537A (ja) | 2012-02-29 | 2013-02-26 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017147696A Division JP2017216474A (ja) | 2012-02-29 | 2017-07-31 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013211537A true JP2013211537A (ja) | 2013-10-10 |
| JP2013211537A5 JP2013211537A5 (enExample) | 2016-04-07 |
Family
ID=49001865
Family Applications (15)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013035320A Withdrawn JP2013211537A (ja) | 2012-02-29 | 2013-02-26 | 半導体装置 |
| JP2017147696A Withdrawn JP2017216474A (ja) | 2012-02-29 | 2017-07-31 | 半導体装置 |
| JP2019012943A Active JP6745924B2 (ja) | 2012-02-29 | 2019-01-29 | 半導体装置 |
| JP2020132355A Withdrawn JP2020191470A (ja) | 2012-02-29 | 2020-08-04 | 半導体装置 |
| JP2022020164A Active JP7410991B2 (ja) | 2012-02-29 | 2022-02-14 | 半導体装置 |
| JP2022033537A Active JP7441869B2 (ja) | 2012-02-29 | 2022-03-04 | 半導体装置 |
| JP2022033538A Active JP7470142B2 (ja) | 2012-02-29 | 2022-03-04 | 半導体装置 |
| JP2022055695A Active JP7395639B2 (ja) | 2012-02-29 | 2022-03-30 | 半導体装置 |
| JP2022172869A Withdrawn JP2023002775A (ja) | 2012-02-29 | 2022-10-28 | 半導体装置 |
| JP2023041660A Active JP7498821B2 (ja) | 2012-02-29 | 2023-03-16 | トランジスタ及び半導体装置 |
| JP2023127125A Active JP7637730B2 (ja) | 2012-02-29 | 2023-08-03 | 半導体装置 |
| JP2023127121A Active JP7657265B2 (ja) | 2012-02-29 | 2023-08-03 | 半導体装置 |
| JP2023127127A Active JP7657266B2 (ja) | 2012-02-29 | 2023-08-03 | 半導体装置 |
| JP2024088615A Active JP7637817B2 (ja) | 2012-02-29 | 2024-05-31 | トランジスタ及び半導体装置 |
| JP2025049399A Pending JP2025094197A (ja) | 2012-02-29 | 2025-03-25 | 半導体装置 |
Family Applications After (14)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017147696A Withdrawn JP2017216474A (ja) | 2012-02-29 | 2017-07-31 | 半導体装置 |
| JP2019012943A Active JP6745924B2 (ja) | 2012-02-29 | 2019-01-29 | 半導体装置 |
| JP2020132355A Withdrawn JP2020191470A (ja) | 2012-02-29 | 2020-08-04 | 半導体装置 |
| JP2022020164A Active JP7410991B2 (ja) | 2012-02-29 | 2022-02-14 | 半導体装置 |
| JP2022033537A Active JP7441869B2 (ja) | 2012-02-29 | 2022-03-04 | 半導体装置 |
| JP2022033538A Active JP7470142B2 (ja) | 2012-02-29 | 2022-03-04 | 半導体装置 |
| JP2022055695A Active JP7395639B2 (ja) | 2012-02-29 | 2022-03-30 | 半導体装置 |
| JP2022172869A Withdrawn JP2023002775A (ja) | 2012-02-29 | 2022-10-28 | 半導体装置 |
| JP2023041660A Active JP7498821B2 (ja) | 2012-02-29 | 2023-03-16 | トランジスタ及び半導体装置 |
| JP2023127125A Active JP7637730B2 (ja) | 2012-02-29 | 2023-08-03 | 半導体装置 |
| JP2023127121A Active JP7657265B2 (ja) | 2012-02-29 | 2023-08-03 | 半導体装置 |
| JP2023127127A Active JP7657266B2 (ja) | 2012-02-29 | 2023-08-03 | 半導体装置 |
| JP2024088615A Active JP7637817B2 (ja) | 2012-02-29 | 2024-05-31 | トランジスタ及び半導体装置 |
| JP2025049399A Pending JP2025094197A (ja) | 2012-02-29 | 2025-03-25 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (9) | US9312257B2 (enExample) |
| JP (15) | JP2013211537A (enExample) |
| KR (6) | KR20130099847A (enExample) |
Cited By (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016066774A (ja) * | 2014-01-28 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2016111092A (ja) * | 2014-12-03 | 2016-06-20 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ |
| JP2016171321A (ja) * | 2015-03-13 | 2016-09-23 | 株式会社半導体エネルギー研究所 | 半導体装置又は記憶装置及びそれらの駆動方法 |
| JP2016225613A (ja) * | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
| JP2018085508A (ja) * | 2016-11-17 | 2018-05-31 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP2018157205A (ja) * | 2017-03-16 | 2018-10-04 | 東芝メモリ株式会社 | 半導体メモリ |
| WO2019038664A1 (ja) * | 2017-08-25 | 2019-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP2019169490A (ja) * | 2018-03-21 | 2019-10-03 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
| JP2020120123A (ja) * | 2020-04-16 | 2020-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2020155495A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 半導体装置及びその製造方法 |
| JP2022016698A (ja) * | 2017-03-16 | 2022-01-21 | キオクシア株式会社 | 半導体メモリ |
| JP2022513935A (ja) * | 2018-12-18 | 2022-02-09 | マイクロン テクノロジー，インク． | メモリアレイの復号および相互接続 |
| JP2023052435A (ja) * | 2017-06-08 | 2023-04-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2023093611A (ja) * | 2022-03-25 | 2023-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2023199160A1 (ja) * | 2022-04-14 | 2023-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置、及び、半導体装置の作製方法 |
| WO2023203417A1 (ja) * | 2022-04-19 | 2023-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| WO2023209484A1 (ja) * | 2022-04-28 | 2023-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2024013602A1 (ja) * | 2022-07-13 | 2024-01-18 | 株式会社半導体エネルギー研究所 | トランジスタ、及び、トランジスタの作製方法 |
| WO2024033742A1 (ja) * | 2022-08-10 | 2024-02-15 | 株式会社半導体エネルギー研究所 | シフトレジスタ |
| DE102023125478A1 (de) | 2022-09-30 | 2024-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren der Halbleitervorrichtung und eines elektronischen Geräts |
| KR20240052666A (ko) | 2022-10-14 | 2024-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20240060442A (ko) | 2022-10-28 | 2024-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치 |
| WO2024134407A1 (ja) * | 2022-12-22 | 2024-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2024176064A1 (ja) * | 2023-02-24 | 2024-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置、及び記憶装置 |
| WO2024194726A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び、半導体装置の作製方法 |
| DE102024112951A1 (de) | 2023-05-12 | 2024-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| WO2024236396A1 (ja) * | 2023-05-12 | 2024-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、半導体装置の作製方法 |
| WO2024236457A1 (ja) * | 2023-05-18 | 2024-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| KR20240170441A (ko) | 2023-05-25 | 2024-12-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 기억 장치, 및 반도체 장치의 제작 방법 |
| DE102024118091A1 (de) | 2023-07-06 | 2025-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| KR20250007995A (ko) | 2023-07-06 | 2025-01-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체층, 산화물 반도체층의 제작 방법, 반도체 장치, 및 반도체 장치의 제작 방법 |
| WO2025017440A1 (ja) * | 2023-07-20 | 2025-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
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