JP2012146965A - 半導体回路及びその駆動方法、並びに記憶装置、レジスタ回路、表示装置、及び電子機器 - Google Patents
半導体回路及びその駆動方法、並びに記憶装置、レジスタ回路、表示装置、及び電子機器 Download PDFInfo
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- JP2012146965A JP2012146965A JP2011277023A JP2011277023A JP2012146965A JP 2012146965 A JP2012146965 A JP 2012146965A JP 2011277023 A JP2011277023 A JP 2011277023A JP 2011277023 A JP2011277023 A JP 2011277023A JP 2012146965 A JP2012146965 A JP 2012146965A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title abstract description 20
- 239000003990 capacitor Substances 0.000 claims description 56
- 230000008859 change Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 66
- 239000010408 film Substances 0.000 description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 230000006870 function Effects 0.000 description 16
- 239000013078 crystal Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 101100095796 Caenorhabditis elegans sig-7 gene Proteins 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 4
- -1 indium gallium zinc oxide compounds Chemical class 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910003023 Mg-Al Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/043—Compensation electrodes or other additional electrodes in matrix displays related to distortions or compensation signals, e.g. for modifying TFT threshold voltage in column driver
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0209—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
- G09G2320/0214—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display with crosstalk due to leakage current of pixel switch in active matrix panels
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- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Liquid Crystal (AREA)
- Semiconductor Integrated Circuits (AREA)
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Abstract
【解決手段】被制御トランジスタのバックゲートに接続されるノードに、ダイオードと第1の容量素子を設け、トランジスタのしきい値電圧が最適になるように所望の電圧を印加可能で且つその電圧を保持することができる構成とし、さらにダイオードに並列に接続された第2の容量素子を設け、当該ノードの電圧を一時的に変化させられる構成とすればよい。
【選択図】図1
Description
本実施の形態では、本発明のトランジスタのしきい値電圧を制御可能な半導体回路の一例について、図1乃至図3を用いて説明する。
図1(A)は、本実施の形態で例示する制御回路100と、これに接続されるトランジスタ111とを説明する図である。
次に、制御回路100を用いてトランジスタ111のしきい値電圧を制御する方法について図1に加えて図2を参照して説明する。図2(A)及び図2(B)は、図1(A)に示すトランジスタ111における、あるソース‐ドレイン間電圧(Vds)を加えた時のゲート‐ソース間電圧(Vgs)に対するソース‐ドレイン間電流(Ids)を模式的に示した図である。
ここで、制御回路100を構成するダイオード101は、トランジスタを用いて構成することができる。図3(A)及び図3(B)に、制御回路を構成するダイオードにトランジスタを適用した例を示す。
本実施の形態では、実施の形態1で例示したトランジスタのしきい値電圧を制御可能な半導体回路を記憶装置の一つであるレジスタ回路に適用した構成の一例について図4を用いて説明する。
図4(A)に、実施の形態1で例示した制御回路100が接続された、1ビットのレジスタ回路の構成例を示す。レジスタ回路200は、トランジスタ201、容量素子203、及びフリップフロップ回路205を有する。本実施の形態では、トランジスタ201としてnチャネル型のトランジスタを用いる。
次に、制御回路100が接続されたレジスタ回路200の回路動作について説明する。
次に、本発明の制御回路を上記で説明したレジスタ回路200を複数有する記憶装置に適用した一例について説明する。
本実施の形態では、実施の形態1で例示したトランジスタのしきい値電圧を制御可能な半導体回路を実施の形態2で例示したものとは異なる構成の記憶装置に適用した一例について図5を用いて説明する。
図5(A)に、実施の形態1で例示した制御回路100が接続された、1ビットのメモリセル250の構成例を示す。メモリセル250は、トランジスタ251、容量素子253、及びトランジスタ255を有する。本実施の形態では、トランジスタ251として実施の形態2で示したトランジスタ201と同様、nチャネル型のトランジスタを用いる。
次に、制御回路100が接続されたメモリセル250の回路動作について説明する。
次に、本発明の制御回路を上記で説明したメモリセル250を複数有する記憶装置に適用した一例について説明する。
本実施の形態では、実施の形態1で例示したトランジスタのしきい値電圧を制御可能な半導体回路を表示装置に適用した構成の一例について図6を用いて説明する。
図6(A)に、実施の形態1で例示した制御回路100が接続された、表示装置に適用可能な画素270の構成例を示す。画素270は、トランジスタ271、容量素子273、及び表示素子275を有する。本実施の形態では、トランジスタ271として、実施の形態2で示したトランジスタ201と同様、nチャネル型のトランジスタを用いる。
次に、制御回路100が接続された画素270の回路動作について説明する。
次に、本発明の制御回路を上記で説明した画素270を複数有する表示装置に適用した一例について説明する。
本実施の形態では、上記実施の形態に適用可能な、チャネルを形成する半導体層に酸化物半導体層を用いたトランジスタと、その周辺回路に適用可能なトランジスタ、及び容量素子の構成及び作製方法の一例について、図7を用いて説明する。
図7(D)は、単結晶半導体の基板301上に、トランジスタ325、トランジスタ327、及び容量素子329が形成された断面概略図である。
次に、作製工程の一例について図7(A)乃至(D)を用いて順に説明する。まず、公知の半導体加工技術を用いて、珪素、砒化ガリウムなどの単結晶半導体の基板301の一表面に、素子分離層303を形成し、さらに不純物領域307a及び不純物領域307b、並びにトランジスタ325のゲート305を形成する。さらに、第1層間絶縁層309を形成し、第1コンタクトプラグ311を形成する(図7(A)参照)。ここで、不純物領域307a及び不純物領域307bの表面には、シリサイド層などを設けて導電性を高めても良い。またコンタクトプラグ311の形成時に、不純物領域に到達するコンタクトプラグ(図示しない)を適宜形成する。
本実施の形態では、上述の実施の形態で説明したトランジスタのしきい値電圧を制御可能な半導体回路を有する半導体装置を電子機器に適用する場合について、図8を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラなどのカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
101 ダイオード
103 容量素子
105 容量素子
107 トランジスタ
109 トランジスタ
111 トランジスタ
151 曲線
152 曲線
153 曲線
200 レジスタ回路
201 トランジスタ
203 容量素子
205 フリップフロップ回路
205a インバータ
205b インバータ
210 記憶装置
211 第1の駆動回路
213 第2の駆動回路
250 メモリセル
251 トランジスタ
253 容量素子
255 トランジスタ
257 抵抗素子
260 記憶装置
261 第1の駆動回路
263 第2の駆動回路
270 画素
271 トランジスタ
273 容量素子
275 表示素子
280 表示装置
281 第1の駆動回路
283 第2の駆動回路
301 基板
303 素子分離層
305 ゲート
307a 不純物領域
307b 不純物領域
309 第1層間絶縁層
311 コンタクトプラグ
313a 第1配線
313b 第1配線
313c 第1配線
315 ゲート絶縁層
317 酸化物半導体層
319a 第2配線
319b 第2配線
321 第2層間絶縁層
323 第3配線
325 トランジスタ
327 トランジスタ
329 容量素子
701 筐体
702 筐体
703 表示部
704 キーボード
711 本体
712 スタイラス
713 表示部
714 操作ボタン
715 外部インターフェイス
720 電子書籍
721 筐体
723 筐体
725 表示部
727 表示部
731 電源
733 操作キー
735 スピーカー
737 軸部
740 筐体
741 筐体
742 表示パネル
743 スピーカー
744 マイクロフォン
746 ポインティングデバイス
747 カメラ用レンズ
748 外部接続端子
749 太陽電池セル
750 外部メモリスロット
761 本体
763 接眼部
764 操作スイッチ
765 表示部
766 バッテリー
767 表示部
770 テレビジョン装置
771 筐体
773 表示部
775 スタンド
780 リモコン操作機
Claims (8)
- 一方の電極が第1のトランジスタのバックゲートと接続し、他方の電極に信号が入力されるダイオードと、
一方の電極が前記ダイオードの一方の電極と接続し、他方の電極が接地される第1の容量素子と、
前記ダイオードと並列に接続される第2の容量素子と、を有し、
前記第1のトランジスタのしきい値を制御可能な半導体回路。 - 前記ダイオードは、チャネルを形成する半導体層に酸化物半導体を用いた第2のトランジスタからなる、請求項1に記載の半導体回路。
- 前記第1のトランジスタは、チャネルを形成する半導体層に酸化物半導体を用いる、請求項1又は請求項2に記載の半導体回路。
- ダイオードを介して第1の入力信号を入力し、第1の容量素子に第1の電圧を保持させると共に、トランジスタのバックゲートに前記第1の電圧を印加して前記トランジスタのしきい値電圧を第1のしきい値電圧とする第1のステップと、
前記ダイオードに並列に接続された第2の容量素子を介して第2の入力信号を入力し、前記トランジスタのバックゲートに第2の電圧を印加して前記トランジスタのしきい値電圧を第2のしきい値電圧とする第2のステップと、を有する半導体回路の駆動方法。 - 請求項1乃至請求項3のいずれか一に記載の半導体回路を有する、記憶装置。
- 請求項1乃至請求項3のいずれか一に記載の半導体回路を有する、レジスタ回路。
- 請求項1乃至請求項3のいずれか一に記載の半導体回路を有する、表示装置。
- 請求項1乃至請求項3のいずれか一に記載の半導体回路を有する、電子機器。
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Also Published As
Publication number | Publication date |
---|---|
JP2017130690A (ja) | 2017-07-27 |
KR20190017836A (ko) | 2019-02-20 |
US20120161139A1 (en) | 2012-06-28 |
TW201727765A (zh) | 2017-08-01 |
TWI539530B (zh) | 2016-06-21 |
JP6129365B2 (ja) | 2017-05-17 |
JP5876284B2 (ja) | 2016-03-02 |
TWI584386B (zh) | 2017-05-21 |
KR102081529B1 (ko) | 2020-02-25 |
US20150171117A1 (en) | 2015-06-18 |
JP2016119486A (ja) | 2016-06-30 |
TWI620252B (zh) | 2018-04-01 |
US9735179B2 (en) | 2017-08-15 |
US9024317B2 (en) | 2015-05-05 |
TW201241932A (en) | 2012-10-16 |
JP6368397B2 (ja) | 2018-08-01 |
KR20120073127A (ko) | 2012-07-04 |
TW201640587A (zh) | 2016-11-16 |
KR101947823B1 (ko) | 2019-02-13 |
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