JP2012142574A - 金属酸化物のハードマスクの形成方法 - Google Patents
金属酸化物のハードマスクの形成方法 Download PDFInfo
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- JP2012142574A JP2012142574A JP2011284831A JP2011284831A JP2012142574A JP 2012142574 A JP2012142574 A JP 2012142574A JP 2011284831 A JP2011284831 A JP 2011284831A JP 2011284831 A JP2011284831 A JP 2011284831A JP 2012142574 A JP2012142574 A JP 2012142574A
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 54
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 50
- 125000006850 spacer group Chemical group 0.000 claims abstract description 90
- 239000000463 material Substances 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000231 atomic layer deposition Methods 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 30
- 239000002243 precursor Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 10
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- -1 amino compound Chemical class 0.000 claims description 3
- 239000002585 base Substances 0.000 claims 2
- 239000003513 alkali Substances 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 136
- 230000008569 process Effects 0.000 description 21
- 238000005530 etching Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 18
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 15
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- 239000010936 titanium Substances 0.000 description 12
- 229910010413 TiO 2 Inorganic materials 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000011162 core material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000011295 pitch Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 239000012702 metal oxide precursor Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02153—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing titanium, e.g. TiSiOx
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/0215—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing tantalum, e.g. TaSiOx
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
【解決手段】本方法はテンプレート上に金属酸化物のハードマスクを形成する方法であって、基板上にフォトレジストまたは非結晶性カーボンを与える工程と、式SixM(1−x)Oyをもつ材料に構成されるテンプレート上に金属酸化物のハードマスクを原子層成膜により蒸着する工程と、を含み、ここで、Mは少なくとも一つの金属元素を表し、xはゼロを含む1未満の数であり、yは約2または化学量論的に決定される数である。
【選択図】図4
Description
本出願は、35USC第119条(e)により、2010年12月28日に出願された米国仮出願第61/427661号(この開示内容は全体に参考文献として組み込まれる)に基づく。
γ:H2Oの表面張力
θ:H2Oの接触角度
D:空間の幅
H:高さ
W:幅
テンプレートは、リアクタの外のクリーンルームにおいてテンプレートの表面に吸着した水を蒸発させるために、不活性ガス(たとえば、He、ArまたはN2)のプラズマまたはラジカルにテンプレートを曝すことで続いて生ずる熱の影響を受ける。ここで、吸着した水の量は、テンプレートがクリーンルームにおいて空気にどれほど長く曝されたかによって決まる。
スペーサ膜は、水分の吸着を防止するために、リモートプラズマを使用して熱アニーリング、プラズマ処理、UV照射、ラジカルに曝すことといった後処理により処理することができる。
a)一つの膜を他のものの上に形成するために、一つの前駆体を供給する工程と異なる前駆体を供給する工程を交互に行い、それら工程を繰り返すこと、b)複数の前駆体を含有する混合前駆体を供給することにより膜を蒸着すること、およびc)個別になった複数の前駆体をそれぞれ、同時に供給することにより膜を蒸着すること。蒸着温度は、テンプレートが非結晶カーボンにより構成されるときは300℃未満、テンプレートがフォトレジストにより構成されるときは、150℃未満となる。
例
PE−ALDの各サイクルのシーケンスが図7に示されている。
TiOのハードマスクの硬度は、100℃のSiNハードマスクおよびTEOSのハードマスクのものに匹敵する。TiOのハードマスクが非常に高い弾性率を有することから、スペーサの崩壊の問題は有効に避けることができる(弾性率は、スペーサの崩壊の防止という観点から見て硬度よりも重要である)。さらに、TiOのハードマスクは、蒸着速度、コンフォーマリティ(共形性)、エッチ選択性等の観点からみて、100℃のSiNのハードマスクおよびTEOSのハードマスクと比較して顕著な利点を有する。たとえば、100℃のSiNのハードマスクは、ベース膜に対し良いエッチ選択性を有するが、エッチングにより除去することが容易でない。TEOSのハードマスクは、ベース膜に対し良いエッチ選択性を持たない。400℃のSiNのハードマスクは、TiOのハードマスクより高い機械的強度を有する。しかし、400℃の蒸着温度は、テンプレートやフォトレジストに熱的損傷を受け、さらに、銅や他の金属の拡散またはマイグレーションが問題となってくる。さらに、400℃でSiNのハードマスクを除去することは容易でなく、400℃でさえ、蒸着速度は低い。上述のとおり、TiOのハードマスクは、他のハードマスクより著しく優れている。
Claims (18)
- テンプレート上に金属酸化物のハードマスクを形成する方法であって、
基板上にフォトレジストまたは非結晶性カーボンを与える行程と、
式SixM(1−x)Oyをもつ材料により構成されるテンプレート上に金属酸化物のハードマスクを原子層成膜により蒸着する工程と、
を含み、
ここで、Mは少なくとも一つの金属元素を表し、xはゼロを含む1未満の数であり、yは約2または化学量論的に決定される数である、方法。 - 前記金属酸化物のハードマスクがスペーサ膜である、請求項1に記載の方法。
- 前記スペーサ膜が、スペーサ画成ダブルパターン形成のためのもので、
当該方法が、前記スペーサ膜を前記テンプレート上に蒸着する工程の後に、SDDPを実行する工程を含む、請求項2に記載の方法。 - 前記Mが、前記金属酸化物のハードマスクを蒸着するために使用されるリアクタをクリーニングするための温度で、100Pa未満の蒸気圧を有するフッ化物の金属である、請求項1に記載の方法。
- 前記MがTi、WまたはTaである、請求項4に記載の方法。
- 前記MがTiである、請求項5に記載の方法。
- 前記金属酸化物のハードマスクを構成する材料がTiO2である、請求項6に記載の方法。
- 前記ALDがプラズマ励起ALD(PE−ALD)である、請求項1に記載の方法。
- 前記ALDが、非結晶カーボンにより構成される前記テンプレートに対して300℃またはそれ以下の温度で、またはフォトレジストにより構成される前記テンプレートに対して150℃またはそれ以下の温度で実施される、請求項1に記載の方法。
- 前記ALDが、SiO2により構成されるSiO2のハードマスクに対して設定される条件と同じ条件の下で実施され、ここでM含有ガスがSiO2のハードマスクに対するSi含有ガスに代えて使用される、請求項1に記載の方法。
- 前記金属酸化物のハードマスクがSiO2のハードマスクのものより少なくとも三倍以上の弾性率を有し、SiO2のハードマスクのものより少なくとも二倍以上の硬度を有する、請求項10に記載の方法。
- 前記金属酸化物のハードマスクがSiO2のハードマスクのものより少なくとも低いドライエッチレートを有し、標準熱酸化物のものに匹敵するウエットエッチレートを有する、請求項10に記載の方法。
- 前記基板が前記テンプレートの下に形成されたベース膜を有し、該ベース膜は酸化ケイ素により構成される、請求項1に記載の方法。
- 前記テンプレートが、前記フォトレジストまたは非結晶カーボンにより構成されている凸状のパターンを有し、該凸状のパターンは1マイクロメートル未満の幅および1またはそれ以上の幅に対する高さの比を有する、請求項1に記載の方法。
- 前記金属酸化物のハードマスクの蒸着工程が、金属酸化物のハードマスクのための前駆体をパルス状に供給する工程、および前記前駆体のパルスの間に、RFパワーをパルス状に適用する工程を含んで成り、ここで、少なくとも一つの反応ガスが、前記RFパワーの適用の間に供給され、ここで、前記前駆体は、アルカリアミノ化合物または金属含有アルコキシ化後物である、請求項8に記載の方法。
- 前記反応ガスが窒素含有ガスからなる、請求項15に記載の方法。
- 前記金属酸化物のハードマスクが、交互に蒸着される金属酸化物の原子層と酸化ケイ素の原子層の積層から構成される、請求項1に記載の方法。
- 前記金属酸化物のハードマスクが前記テンプレートのものと同等の膜ストレスを有する、請求項1に記載の方法。
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Also Published As
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KR101866567B1 (ko) | 2018-06-11 |
KR20120075397A (ko) | 2012-07-06 |
US20150056540A1 (en) | 2015-02-26 |
JP5913965B2 (ja) | 2016-05-11 |
KR20180002566A (ko) | 2018-01-08 |
KR101849500B1 (ko) | 2018-04-16 |
US9171716B2 (en) | 2015-10-27 |
US20120164846A1 (en) | 2012-06-28 |
US8901016B2 (en) | 2014-12-02 |
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