JP2012094905A - 中間層構造を有する厚い窒化物半導体構造、及び厚い窒化物半導体構造を製造する方法 - Google Patents
中間層構造を有する厚い窒化物半導体構造、及び厚い窒化物半導体構造を製造する方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title abstract description 88
- 239000011229 interlayer Substances 0.000 title abstract description 19
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 230000006911 nucleation Effects 0.000 claims abstract description 47
- 238000010899 nucleation Methods 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 34
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 15
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
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- 229910052732 germanium Inorganic materials 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- -1 Si 2 H 6 Chemical compound 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical group CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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Abstract
【解決手段】半導体構造は、基板、前記基板上の核生成層、前記核生成層上の組成傾斜層、及び前記組成傾斜層上の窒化物半導体材料の層を含む。前記窒化物半導体材料の層は、前記窒化物半導体材料の層の中に間隔をおいて配置された複数の実質的に緩和された窒化物中間層を含む。前記実質的に緩和された窒化物中間層は、アルミニウム及びガリウムを含み、n型ドーパントで導電的にドープされ、また前記複数の窒化物中間層を含む前記窒化物半導体材料の層は、少なくとも約2.0μmの全厚を有する。
【選択図】図1
Description
Claims (8)
- シリコン基板をH2を含む反応器チャンバの中で加熱するステップと、
前記反応器チャンバの中にシリコン含有ガスを供給するステップと、
その後、前記基板の上に核生成層を形成するステップと
を備えることを特徴とする半導体構造を形成する方法。 - 請求項1に記載の方法において、前記基板全体に前記シリコン含有ガスを流すステップの前に、フッ化水素酸及び/又は緩衝酸化物エッチング溶液を用いて前記基板を清浄化するステップを更に備えることを特徴とする方法。
- 請求項1に記載の方法において、前記核生成層を形成するステップは、前記核生成層を1000℃から1100℃の温度で形成するステップを備えること特徴とする方法。
- 請求項1に記載の方法において、前記シリコン含有ガスは、SiH4、Si2H6、SiCl4、SiBr4及び/又はSi3N4を含むことを特徴とする方法。
- 請求項1に記載の方法において、前記シリコン含有ガスを供給するステップは、1000℃の温度及び0.2気圧の圧力で、前記基板全体に前記シリコン含有ガスを流すステップを備えることを特徴とする方法。
- 請求項1に記載の方法において、前記核生成層は、AlNを含むことを特徴とする方法。
- 請求項1に記載の方法において、前記シリコン含有ガスとH2の比は、10−7:1であることを特徴とする方法。
- 請求項1に記載の方法において、前記シリコン含有ガスを供給するステップは、前記反応器の1つ又は複数の部分の上にシリコン被覆物を設けること、あるいは前記反応器内の前記基板から上流に固体シリコンを配置するステップを備えることを特徴とする方法。
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Application Number | Priority Date | Filing Date | Title |
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US11/716,319 | 2007-03-09 | ||
US11/716,319 US8362503B2 (en) | 2007-03-09 | 2007-03-09 | Thick nitride semiconductor structures with interlayer structures |
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JP2009552706A Division JP4954298B2 (ja) | 2007-03-09 | 2008-03-04 | 中間層構造を有する厚い窒化物半導体構造、及び厚い窒化物半導体構造を製造する方法 |
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US (2) | US8362503B2 (ja) |
EP (2) | EP2064729B1 (ja) |
JP (2) | JP4954298B2 (ja) |
CN (2) | CN102208332B (ja) |
WO (1) | WO2008112096A2 (ja) |
Cited By (4)
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JP2016511537A (ja) * | 2013-01-31 | 2016-04-14 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体積層体および半導体積層体の製造方法 |
US9673284B2 (en) | 2012-11-21 | 2017-06-06 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer |
US9679974B2 (en) | 2013-06-27 | 2017-06-13 | Kabushiki Kaisha Toshiba | Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer |
KR20240002553A (ko) * | 2022-06-29 | 2024-01-05 | 웨이브로드 주식회사 | 그룹3족 질화물 반도체 소자용 템플릿 |
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US20130221327A1 (en) | 2013-08-29 |
JP2010521064A (ja) | 2010-06-17 |
EP2064729B1 (en) | 2019-04-24 |
CN102208332A (zh) | 2011-10-05 |
CN101632152B (zh) | 2011-07-13 |
EP3534393A1 (en) | 2019-09-04 |
WO2008112096A2 (en) | 2008-09-18 |
EP2064729A2 (en) | 2009-06-03 |
CN101632152A (zh) | 2010-01-20 |
US20080217645A1 (en) | 2008-09-11 |
JP5702312B2 (ja) | 2015-04-15 |
WO2008112096A3 (en) | 2009-03-05 |
US9054017B2 (en) | 2015-06-09 |
US8362503B2 (en) | 2013-01-29 |
CN102208332B (zh) | 2014-08-20 |
JP4954298B2 (ja) | 2012-06-13 |
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