FR2929445B1 - Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium - Google Patents

Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium

Info

Publication number
FR2929445B1
FR2929445B1 FR0851891A FR0851891A FR2929445B1 FR 2929445 B1 FR2929445 B1 FR 2929445B1 FR 0851891 A FR0851891 A FR 0851891A FR 0851891 A FR0851891 A FR 0851891A FR 2929445 B1 FR2929445 B1 FR 2929445B1
Authority
FR
France
Prior art keywords
gallium nitride
aluminum
producing
nitride layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0851891A
Other languages
English (en)
Other versions
FR2929445A1 (fr
Inventor
Hacene Lahreche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Picogiga International
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0851891A priority Critical patent/FR2929445B1/fr
Application filed by Picogiga International filed Critical Picogiga International
Priority to JP2011501165A priority patent/JP2011515861A/ja
Priority to PCT/EP2009/052881 priority patent/WO2009118244A1/fr
Priority to KR1020107023128A priority patent/KR101186032B1/ko
Priority to EP09725028A priority patent/EP2269212A1/fr
Priority to CN200980109974.0A priority patent/CN101978470B/zh
Priority to US12/934,359 priority patent/US8093077B2/en
Publication of FR2929445A1 publication Critical patent/FR2929445A1/fr
Application granted granted Critical
Publication of FR2929445B1 publication Critical patent/FR2929445B1/fr
Priority to US13/313,522 priority patent/US8283673B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
FR0851891A 2008-03-25 2008-03-25 Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium Active FR2929445B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0851891A FR2929445B1 (fr) 2008-03-25 2008-03-25 Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium
PCT/EP2009/052881 WO2009118244A1 (fr) 2008-03-25 2009-03-11 Procédé de fabrication d'une couche de nitrure de gallium ou d’une couche de nitrure d'aluminium et de gallium
KR1020107023128A KR101186032B1 (ko) 2008-03-25 2009-03-11 질화갈륨 또는 질화알루미늄갈륨 층을 제조하는 방법
EP09725028A EP2269212A1 (fr) 2008-03-25 2009-03-11 Procédé de fabrication d'une couche de nitrure de gallium ou d une couche de nitrure d'aluminium et de gallium
JP2011501165A JP2011515861A (ja) 2008-03-25 2009-03-11 窒化ガリウムまたはガリウムおよびアルミニウム窒化物の層を製造する方法
CN200980109974.0A CN101978470B (zh) 2008-03-25 2009-03-11 氮化镓或氮化铝镓层的制造方法
US12/934,359 US8093077B2 (en) 2008-03-25 2009-03-11 Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride
US13/313,522 US8283673B2 (en) 2008-03-25 2011-12-07 Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0851891A FR2929445B1 (fr) 2008-03-25 2008-03-25 Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium

Publications (2)

Publication Number Publication Date
FR2929445A1 FR2929445A1 (fr) 2009-10-02
FR2929445B1 true FR2929445B1 (fr) 2010-05-21

Family

ID=40298702

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0851891A Active FR2929445B1 (fr) 2008-03-25 2008-03-25 Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium

Country Status (7)

Country Link
US (2) US8093077B2 (fr)
EP (1) EP2269212A1 (fr)
JP (1) JP2011515861A (fr)
KR (1) KR101186032B1 (fr)
CN (1) CN101978470B (fr)
FR (1) FR2929445B1 (fr)
WO (1) WO2009118244A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010027411A1 (de) * 2010-07-15 2012-01-19 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge
WO2012176411A1 (fr) * 2011-06-24 2012-12-27 住友化学株式会社 Substrat semi-conducteur pour transistor, et procédé de fabrication de transistor et de substrat semi-conducteur pour transistor
FR2977260B1 (fr) * 2011-06-30 2013-07-19 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
JP2013149732A (ja) * 2012-01-18 2013-08-01 Mitsubishi Electric Corp へテロ接合電界効果型トランジスタおよびその製造方法
KR102225693B1 (ko) * 2013-03-14 2021-03-12 헥사테크, 인크. 단결정 알루미늄 질화물 기판을 포함하는 전력 반도체 장치들
EP3182460A1 (fr) * 2015-12-18 2017-06-21 IMEC vzw Procédé de fabrication d'un dispositif hemt à nitrure du groupe iii à mode d'enrichissement, et structure à nitrure de groupe iii fabriqué à l'aide dudit procédé
US10043903B2 (en) 2015-12-21 2018-08-07 Samsung Electronics Co., Ltd. Semiconductor devices with source/drain stress liner
EP3539155A4 (fr) * 2016-11-10 2020-06-17 The Government of the United States of America, as represented by the Secretary of the Navy Couches d'arrêt de gravure iii-n contenant du scandium pour la gravure sélective de nitrures d'éléments du groupe iii et matériaux apparentés
US10128107B1 (en) * 2017-08-31 2018-11-13 Rfhic Corporation Wafers having III-Nitride and diamond layers
WO2019077420A1 (fr) * 2017-10-19 2019-04-25 King Abdullah University Of Science And Technology Transistor à haute mobilité d'électrons ayant une couche intermédiaire en alliage de nitrure de bore et procédé de production
CN110791805A (zh) * 2019-10-31 2020-02-14 中国电子科技集团公司第十三研究所 一种衬底、外延片及其生长方法
JP7439536B2 (ja) * 2020-01-28 2024-02-28 富士通株式会社 半導体装置
CN111477536A (zh) * 2020-03-31 2020-07-31 华为技术有限公司 一种半导体外延结构及半导体器件
CN111334781A (zh) * 2020-04-20 2020-06-26 哈尔滨科友半导体产业装备与技术研究院有限公司 一种氮化铝晶体生长所用的大尺寸复合籽晶及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3505405B2 (ja) * 1998-10-22 2004-03-08 三洋電機株式会社 半導体素子及びその製造方法
GB2343294A (en) * 1998-10-31 2000-05-03 Sharp Kk Lattice-matched semiconductor devices
GB2350721A (en) * 1999-08-24 2000-12-06 Arima Optoelectronics Corp Growing semiconductor layers
FR2810159B1 (fr) * 2000-06-09 2005-04-08 Centre Nat Rech Scient Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche
TWI230978B (en) * 2003-01-17 2005-04-11 Sanken Electric Co Ltd Semiconductor device and the manufacturing method thereof
JP4332720B2 (ja) * 2003-11-28 2009-09-16 サンケン電気株式会社 半導体素子形成用板状基体の製造方法
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures

Also Published As

Publication number Publication date
JP2011515861A (ja) 2011-05-19
EP2269212A1 (fr) 2011-01-05
FR2929445A1 (fr) 2009-10-02
US20110012128A1 (en) 2011-01-20
CN101978470A (zh) 2011-02-16
WO2009118244A1 (fr) 2009-10-01
KR101186032B1 (ko) 2012-09-25
US8283673B2 (en) 2012-10-09
CN101978470B (zh) 2013-03-20
US20120074427A1 (en) 2012-03-29
KR20100124334A (ko) 2010-11-26
US8093077B2 (en) 2012-01-10

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Effective date: 20140825

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