CN101978470A - 氮化镓或氮化铝镓层的制造方法 - Google Patents
氮化镓或氮化铝镓层的制造方法 Download PDFInfo
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- CN101978470A CN101978470A CN200980109974.0A CN200980109974A CN101978470A CN 101978470 A CN101978470 A CN 101978470A CN 200980109974 A CN200980109974 A CN 200980109974A CN 101978470 A CN101978470 A CN 101978470A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR08/51891 | 2008-03-25 | ||
FR0851891A FR2929445B1 (fr) | 2008-03-25 | 2008-03-25 | Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium |
PCT/EP2009/052881 WO2009118244A1 (en) | 2008-03-25 | 2009-03-11 | Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101978470A true CN101978470A (zh) | 2011-02-16 |
CN101978470B CN101978470B (zh) | 2013-03-20 |
Family
ID=40298702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980109974.0A Active CN101978470B (zh) | 2008-03-25 | 2009-03-11 | 氮化镓或氮化铝镓层的制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8093077B2 (zh) |
EP (1) | EP2269212A1 (zh) |
JP (1) | JP2011515861A (zh) |
KR (1) | KR101186032B1 (zh) |
CN (1) | CN101978470B (zh) |
FR (1) | FR2929445B1 (zh) |
WO (1) | WO2009118244A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110791805A (zh) * | 2019-10-31 | 2020-02-14 | 中国电子科技集团公司第十三研究所 | 一种衬底、外延片及其生长方法 |
CN111334781A (zh) * | 2020-04-20 | 2020-06-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种氮化铝晶体生长所用的大尺寸复合籽晶及其制备方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010027411A1 (de) * | 2010-07-15 | 2012-01-19 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge |
WO2012176411A1 (ja) * | 2011-06-24 | 2012-12-27 | 住友化学株式会社 | トランジスタ用半導体基板、トランジスタ及びトランジスタ用半導体基板の製造方法 |
FR2977260B1 (fr) * | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
JP2013149732A (ja) * | 2012-01-18 | 2013-08-01 | Mitsubishi Electric Corp | へテロ接合電界効果型トランジスタおよびその製造方法 |
US9748409B2 (en) * | 2013-03-14 | 2017-08-29 | Hexatech, Inc. | Power semiconductor devices incorporating single crystalline aluminum nitride substrate |
EP3182460A1 (en) * | 2015-12-18 | 2017-06-21 | IMEC vzw | Method of fabricating an enhancement mode group iii-nitride hemt device and a group iii-nitride structure fabricated thereof |
US10043903B2 (en) | 2015-12-21 | 2018-08-07 | Samsung Electronics Co., Ltd. | Semiconductor devices with source/drain stress liner |
WO2018089579A2 (en) * | 2016-11-10 | 2018-05-17 | The Goverment of the United States of America, as represented by the Secretary of the Navy | Scandium-containing iii-n etch-stop layers for selective etching of iii-nitrides and related materials |
US10128107B1 (en) * | 2017-08-31 | 2018-11-13 | Rfhic Corporation | Wafers having III-Nitride and diamond layers |
WO2019077420A1 (en) * | 2017-10-19 | 2019-04-25 | King Abdullah University Of Science And Technology | HIGH-ELECTRON MOBILITY TRANSISTOR HAVING AN INTERMEDIATE BORON NITRIDE ALLOY LAYER AND METHOD FOR PRODUCING THE SAME |
JP7439536B2 (ja) * | 2020-01-28 | 2024-02-28 | 富士通株式会社 | 半導体装置 |
CN111477536A (zh) * | 2020-03-31 | 2020-07-31 | 华为技术有限公司 | 一种半导体外延结构及半导体器件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3505405B2 (ja) * | 1998-10-22 | 2004-03-08 | 三洋電機株式会社 | 半導体素子及びその製造方法 |
GB2343294A (en) * | 1998-10-31 | 2000-05-03 | Sharp Kk | Lattice-matched semiconductor devices |
GB2350721A (en) * | 1999-08-24 | 2000-12-06 | Arima Optoelectronics Corp | Growing semiconductor layers |
FR2810159B1 (fr) * | 2000-06-09 | 2005-04-08 | Centre Nat Rech Scient | Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche |
TWI230978B (en) * | 2003-01-17 | 2005-04-11 | Sanken Electric Co Ltd | Semiconductor device and the manufacturing method thereof |
JP4332720B2 (ja) * | 2003-11-28 | 2009-09-16 | サンケン電気株式会社 | 半導体素子形成用板状基体の製造方法 |
US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
-
2008
- 2008-03-25 FR FR0851891A patent/FR2929445B1/fr active Active
-
2009
- 2009-03-11 EP EP09725028A patent/EP2269212A1/en not_active Withdrawn
- 2009-03-11 WO PCT/EP2009/052881 patent/WO2009118244A1/en active Application Filing
- 2009-03-11 CN CN200980109974.0A patent/CN101978470B/zh active Active
- 2009-03-11 US US12/934,359 patent/US8093077B2/en active Active
- 2009-03-11 KR KR1020107023128A patent/KR101186032B1/ko active IP Right Grant
- 2009-03-11 JP JP2011501165A patent/JP2011515861A/ja active Pending
-
2011
- 2011-12-07 US US13/313,522 patent/US8283673B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110791805A (zh) * | 2019-10-31 | 2020-02-14 | 中国电子科技集团公司第十三研究所 | 一种衬底、外延片及其生长方法 |
CN111334781A (zh) * | 2020-04-20 | 2020-06-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种氮化铝晶体生长所用的大尺寸复合籽晶及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2269212A1 (en) | 2011-01-05 |
CN101978470B (zh) | 2013-03-20 |
FR2929445B1 (fr) | 2010-05-21 |
JP2011515861A (ja) | 2011-05-19 |
US8283673B2 (en) | 2012-10-09 |
KR20100124334A (ko) | 2010-11-26 |
US20110012128A1 (en) | 2011-01-20 |
WO2009118244A1 (en) | 2009-10-01 |
KR101186032B1 (ko) | 2012-09-25 |
US20120074427A1 (en) | 2012-03-29 |
FR2929445A1 (fr) | 2009-10-02 |
US8093077B2 (en) | 2012-01-10 |
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Address after: French Benin Patentee after: Tektronix Electronics Co. Address before: French Benin Patentee before: PICOGIGA INTERNATIONAL |
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Effective date of registration: 20150618 Address after: French Bernini Patentee after: SOITEC Address before: French Benin Patentee before: Tektronix Electronics Co. |