CN111477534A - 氮化铝模板及其制备方法 - Google Patents
氮化铝模板及其制备方法 Download PDFInfo
- Publication number
- CN111477534A CN111477534A CN201910066040.9A CN201910066040A CN111477534A CN 111477534 A CN111477534 A CN 111477534A CN 201910066040 A CN201910066040 A CN 201910066040A CN 111477534 A CN111477534 A CN 111477534A
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- Prior art keywords
- aln
- layer
- aluminum nitride
- reaction chamber
- baln
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 238000003780 insertion Methods 0.000 claims abstract description 40
- 230000037431 insertion Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 40
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052796 boron Inorganic materials 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 5
- 229910015844 BCl3 Inorganic materials 0.000 claims description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000007547 defect Effects 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 13
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910066040.9A CN111477534B (zh) | 2019-01-23 | 2019-01-23 | 氮化铝模板及其制备方法 |
Applications Claiming Priority (1)
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CN201910066040.9A CN111477534B (zh) | 2019-01-23 | 2019-01-23 | 氮化铝模板及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN111477534A true CN111477534A (zh) | 2020-07-31 |
CN111477534B CN111477534B (zh) | 2023-02-24 |
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Family Applications (1)
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CN201910066040.9A Active CN111477534B (zh) | 2019-01-23 | 2019-01-23 | 氮化铝模板及其制备方法 |
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CN (1) | CN111477534B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113089091A (zh) * | 2021-04-01 | 2021-07-09 | 北京化工大学 | 氮化硼模板及其制备方法 |
CN113192820A (zh) * | 2021-03-12 | 2021-07-30 | 南昌大学 | 一种硅衬底氮化铝薄膜的制备方法 |
CN114203529A (zh) * | 2022-02-17 | 2022-03-18 | 江苏第三代半导体研究院有限公司 | 氮化铝外延结构,其制备方法以及半导体器件 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003060212A (ja) * | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | シヨットキバリアダイオード及びその製造方法 |
US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
JP2008053399A (ja) * | 2006-08-24 | 2008-03-06 | Nippon Telegr & Teleph Corp <Ntt> | 半導体構造および半導体構造の製造方法 |
CN101335200A (zh) * | 2008-08-01 | 2008-12-31 | 武汉大学 | 一种AlN薄膜的制备方法 |
JP2009263144A (ja) * | 2008-04-22 | 2009-11-12 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結晶 |
CN103840041A (zh) * | 2013-12-03 | 2014-06-04 | 上海蓝光科技有限公司 | 一种用于氮化物生长的复合衬底结构的制造方法 |
US20150083994A1 (en) * | 2013-09-23 | 2015-03-26 | Sensor Electronic Technology, Inc. | Group III Nitride Heterostructure for Optoelectronic Device |
-
2019
- 2019-01-23 CN CN201910066040.9A patent/CN111477534B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003060212A (ja) * | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | シヨットキバリアダイオード及びその製造方法 |
US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
JP2008053399A (ja) * | 2006-08-24 | 2008-03-06 | Nippon Telegr & Teleph Corp <Ntt> | 半導体構造および半導体構造の製造方法 |
JP2009263144A (ja) * | 2008-04-22 | 2009-11-12 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結晶 |
CN101335200A (zh) * | 2008-08-01 | 2008-12-31 | 武汉大学 | 一种AlN薄膜的制备方法 |
US20150083994A1 (en) * | 2013-09-23 | 2015-03-26 | Sensor Electronic Technology, Inc. | Group III Nitride Heterostructure for Optoelectronic Device |
CN103840041A (zh) * | 2013-12-03 | 2014-06-04 | 上海蓝光科技有限公司 | 一种用于氮化物生长的复合衬底结构的制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113192820A (zh) * | 2021-03-12 | 2021-07-30 | 南昌大学 | 一种硅衬底氮化铝薄膜的制备方法 |
CN113089091A (zh) * | 2021-04-01 | 2021-07-09 | 北京化工大学 | 氮化硼模板及其制备方法 |
CN114203529A (zh) * | 2022-02-17 | 2022-03-18 | 江苏第三代半导体研究院有限公司 | 氮化铝外延结构,其制备方法以及半导体器件 |
CN114203529B (zh) * | 2022-02-17 | 2022-05-10 | 江苏第三代半导体研究院有限公司 | 氮化铝外延结构,其制备方法以及半导体器件 |
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CN111477534B (zh) | 2023-02-24 |
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Effective date of registration: 20240229 Address after: Unit 303, 3rd Floor, Building 3, No. 88 Xinghua Street (Section 3), Daxing District, Beijing, 102699 Patentee after: Beijing ganna Photoelectric Technology Co.,Ltd. Country or region after: China Address before: Work stations 16-N-67, open area, 16th and 17th floors, Zhongqi Zero Building, No. 19 Aigehao Road, Weitang Town, Xiangcheng District, Suzhou City, Jiangsu Province, 215000 (cluster registration) Patentee before: Suzhou Xinzhuoyuan Semiconductor Co.,Ltd. Country or region before: China |
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