JP2010538498A - 蒸気に基づく組合せ処理 - Google Patents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【選択図】図8B
Description
Claims (17)
- 基板を組合せ的に処理する方法において、
前記基板の表面上に流体ボリュームを流すステップであって、前記基板の分離領域を、隣接する領域が曝される構成成分とは異なる構成成分の混合物に同時に曝すために、前記流体ボリュームの異なる部分が、異なる構成成分を有するものとされるフローイングステップと、
前記フローイングステップを複数回行うことにより、異なる方法で処理される分離領域を生成する生成ステップとを備えることを特徴とする方法。 - 請求項1に記載の方法において、
前記生成ステップが、前記フローイングステップを複数回行う間に物質を生成するために、少なくとも1の前記分離領域の前記表面の近傍の雰囲気における条件を確立することを特徴とする方法。 - 請求項1に記載の方法において、
前記分離領域を処理流体およびパージ流体に順次曝すステップをさらに備え、
前記処理流体が少なくとも1の前駆体を含み、前記パージ流体がキャリアガスであり、前記分離領域の1つが、前記フローイングステップ中に1またはそれ以上の前駆体に曝されることを特徴とする方法。 - 請求項1に記載の方法において、
物理的障壁または流体の流れの一方により、前記異なる部分の隣接部分を分離するステップをさらに備えることを特徴とする方法。 - 請求項4に記載の方法において、
前記隣接部分を分離するステップが、前記隣接部分間で共有の外周端部に沿う、隣接する異なる部分の相互拡散を可能にし、分離された隣接部分の残りが、実質的に均一に処理されることを特徴とする方法。 - 請求項1に記載の方法において、
前記流体ボリュームの前記異なる部分の分離を維持するために、前記流体ボリュームの前記異なる部分の各々の圧力を実質的に釣り合わせるステップと、
非処理時間中に前記流体ボリュームを流すステップと、
前記基板の表面に向かって前記基板の表面を半径方向に横切る前記流体の各流体フローについて、単一方向の動きを形成するために、前記流体フローを排気するステップとをさらに備えることを特徴とする方法。 - 請求項1に記載の方法において、
真空源へのチャネルの伝導性が、前記基板の外周のまわりに形成されるチャネルの伝導性よりも大きいことを特徴とする方法。 - 請求項1に記載の方法において、
前記流体ボリュームの前記異なる部分と前記基板の前記分離領域との間の空間的配置を変化させるステップと、
前記フローイングステップおよび前記生成ステップを繰り返し行うステップとをさらに備え、
前記空間的配置を変化させるステップが、
前記流体ボリュームの前記異なる部分と前記基板の前記分離領域との間の相対的な角度位置を複数回、順次変化させるステップを含み、
前記流体ボリュームの前記異なる部分と前記基板の前記分離領域との間の相対的な順次的角度位置の各々が、予め設定された時間維持されることを特徴とする方法。 - 請求項1に記載の方法において、
前記異なる部分における圧力を実質的に釣り合わせるために、流速を用いて、前記異なる部分の隣接部分を分離するステップをさらに含むことを特徴とする方法。 - 基板を組合せ的に処理するためのチャンバにおいて、
流体源との間で流体が流通するシャワーヘッドであって、異なる構成成分を有する流体フローを受け入れるための複数の注入口と、前記流体フローの分離を維持するための流体分離機構とを有するシャワーヘッドと、
基板支持部と、
前記基板支持部により規定される空間に向かって当該空間を放射状に横切る指向性流体フローを維持するために、前記シャワーヘッドと前記基板支持部との間の上流領域に対してより高い伝導性を有する真空源とを備えることを特徴とするチャンバ。 - 請求項10に記載のチャンバにおいて、
前記基板支持部上に配置される基板をさらに備え、異なる構成成分を有する前記流体ボリュームの異なる部分が、前記基板の分離領域を、隣接する領域が曝される構成成分とは異なる構成成分の混合物に同時に曝すように構成され、
前記チャンバが、当該チャンバに結合された流体供給システムをさらに備え、この流体供給システムが、前記基板の前記隣接する領域が曝される前記流体フローの分離が維持されるように、前記シャワーヘッドに与えられる前記流体フローのそれぞれの圧力を均等化できるものであることを特徴とするチャンバ。 - 請求項10に記載のシステムにおいて、
前記真空源への注入口が、前記基板支持部の下方と、前記基板の端部の近傍の何れか一方に配置されていることを特徴とするシステム。 - 請求項10に記載のシステムにおいて、
前記流体分離機構が、前記シャワーヘッドの表面を横切って外方向に放射状に延び、前記流体分離機構が、前記シャワーヘッド内の壁、前記シャワーヘッドから前記チャンバ内に延びる壁、同心ポート、または半径方向に整列された注入ポートのセットの中の1つであることを特徴とするシステム。 - 処理チャンバ内で組合せ処理を実行するためのシステムにおいて、
異なるフローが異なる構成成分を含むように、前記システムの複数の流体注入口に、対応する流体フローを供給するための手段と、
基板支持部と、
分配手段であって、前記異なる流体フローが、この分配手段と前記基板支持部との間で分離された状態で保たれるように、前記複数の流体注入口から前記流体フローを分配するための手段と、
前記処理チャンバを排気して、前記基板支持部により規定される領域上で前記異なるフローの分離を維持することにより、組合せ処理を生じさせる手段とを備えることを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
前記基板支持部上に配置される基板をさらに備え、前記基板の隣接する領域が、前記異なる流体フローの異なる構成成分に曝されることを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
前記流体を分配する手段が、前記複数の流体注入口からの前記流体フローの分離を維持するための手段と、前記流体フローを流している間に、前記領域のセクタを1またはそれ以上の前駆体に曝すための手段とを備えることを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
前記処理チャンバを排気する手段が、当該手段のための注入口において、前記基板支持部の外周端部の周囲に規定される領域の伝導性よりも大きい伝導性を有することを特徴とするシステム。
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- 2008-09-05 JP JP2010524154A patent/JP5535913B2/ja not_active Expired - Fee Related
- 2008-09-05 WO PCT/US2008/075301 patent/WO2009032958A1/en active Application Filing
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JP7088732B2 (ja) | 2018-04-27 | 2022-06-21 | 株式会社堀場エステック | 基板処理装置及び基板処理装置用プログラム |
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Also Published As
Publication number | Publication date |
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US8409354B2 (en) | 2013-04-02 |
US20120090545A1 (en) | 2012-04-19 |
JP5535913B2 (ja) | 2014-07-02 |
US8334015B2 (en) | 2012-12-18 |
KR101534362B1 (ko) | 2015-07-06 |
WO2009032958A1 (en) | 2009-03-12 |
US20090061083A1 (en) | 2009-03-05 |
TWI398547B (zh) | 2013-06-11 |
US20090061646A1 (en) | 2009-03-05 |
CN101842873B (zh) | 2012-06-13 |
CN101842873A (zh) | 2010-09-22 |
KR20100070339A (ko) | 2010-06-25 |
US8440259B2 (en) | 2013-05-14 |
EP2186117A1 (en) | 2010-05-19 |
US20090061644A1 (en) | 2009-03-05 |
TW200932944A (en) | 2009-08-01 |
EP2186117A4 (en) | 2016-07-06 |
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