JP2010506402A - Ｌｅｄのシステムおよび方法 - Google Patents
Ｌｅｄのシステムおよび方法 Download PDFInfo
- Publication number
- JP2010506402A JP2010506402A JP2009531411A JP2009531411A JP2010506402A JP 2010506402 A JP2010506402 A JP 2010506402A JP 2009531411 A JP2009531411 A JP 2009531411A JP 2009531411 A JP2009531411 A JP 2009531411A JP 2010506402 A JP2010506402 A JP 2010506402A
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- 238000000034 method Methods 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 claims abstract description 285
- 239000000463 material Substances 0.000 claims description 68
- 239000007787 solid Substances 0.000 claims description 52
- 230000005540 biological transmission Effects 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 230000004907 flux Effects 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 11
- 238000000227 grinding Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000608 laser ablation Methods 0.000 claims description 8
- 238000007493 shaping process Methods 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 19
- 239000002245 particle Substances 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 238000009826 distribution Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 230000008901 benefit Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 238000011960 computer-aided design Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004141 dimensional analysis Methods 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82781806P | 2006-10-02 | 2006-10-02 | |
| US88178507P | 2007-01-22 | 2007-01-22 | |
| PCT/US2007/021117 WO2008042351A2 (en) | 2006-10-02 | 2007-10-01 | Led system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010506402A true JP2010506402A (ja) | 2010-02-25 |
| JP2010506402A5 JP2010506402A5 (enExample) | 2012-07-19 |
Family
ID=39269018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009531411A Pending JP2010506402A (ja) | 2006-10-02 | 2007-10-01 | Ｌｅｄのシステムおよび方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8087960B2 (enExample) |
| EP (1) | EP2070123A2 (enExample) |
| JP (1) | JP2010506402A (enExample) |
| KR (1) | KR20090064474A (enExample) |
| CN (1) | CN101553928B (enExample) |
| TW (1) | TW200824161A (enExample) |
| WO (1) | WO2008042351A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013229393A (ja) * | 2012-04-24 | 2013-11-07 | Toyoda Gosei Co Ltd | 発光装置 |
| JP2016127199A (ja) * | 2015-01-07 | 2016-07-11 | スタンレー電気株式会社 | 波長変換体及びその製造方法並びに当該波長変換体を用いた照明装置 |
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| CN101385145B (zh) | 2006-01-05 | 2011-06-08 | 伊鲁米特克斯公司 | 用于引导来自led的光的分立光学装置 |
| US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
| US20090275157A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
| JP2010506402A (ja) | 2006-10-02 | 2010-02-25 | イルミテックス， インコーポレイテッド | Ｌｅｄのシステムおよび方法 |
| US8791631B2 (en) | 2007-07-19 | 2014-07-29 | Quarkstar Llc | Light emitting device |
| CN101118178B (zh) * | 2007-09-06 | 2010-09-29 | 复旦大学 | 一种led光通量测试方法 |
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| TW201007993A (en) * | 2008-06-26 | 2010-02-16 | Illumitex Inc | Optical device shaping |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2070123A2 (en) | 2009-06-17 |
| KR20090064474A (ko) | 2009-06-18 |
| CN101553928B (zh) | 2011-06-01 |
| US7789531B2 (en) | 2010-09-07 |
| US8087960B2 (en) | 2012-01-03 |
| HK1138431A1 (en) | 2010-08-20 |
| WO2008042351A2 (en) | 2008-04-10 |
| WO2008042351A3 (en) | 2008-06-19 |
| US20080081531A1 (en) | 2008-04-03 |
| CN101553928A (zh) | 2009-10-07 |
| TW200824161A (en) | 2008-06-01 |
| WO2008042351B1 (en) | 2008-08-07 |
| US20080080166A1 (en) | 2008-04-03 |
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