US20160013363A1 - Light-emitting element and the manufacturing method thereof - Google Patents
Light-emitting element and the manufacturing method thereof Download PDFInfo
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- US20160013363A1 US20160013363A1 US14/326,270 US201414326270A US2016013363A1 US 20160013363 A1 US20160013363 A1 US 20160013363A1 US 201414326270 A US201414326270 A US 201414326270A US 2016013363 A1 US2016013363 A1 US 2016013363A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Definitions
- the application relates to a light-emitting element and the manufacturing method thereof, in particular, relates to a light-emitting element having a shaped side surface and the manufacturing method thereof.
- the light radiation theory of light emitting diode is to generate light from the energy released by the electron moving between an n-type semiconductor and a p-type semiconductor. Because the light radiation theory of LED is different from the incandescent light which heats the filament, the LED is called a “cold” light source. Moreover, the LED is more sustainable, longevous, light and handy, and has less power-consumption, therefore it is considered as another option of the light source for the illumination markets. The LED applies to various applications like the traffic signal, backlight module, street light, and medical instruments, and is gradually replacing the traditional lighting sources.
- a light-emitting device may include a substrate, a light-emitting stack including an n-type semiconductor layer, an active layer and a p-type semiconductor layer.
- the light-emitting stack may have roughened structure on the surface thereof to enhance light extraction.
- the light emitting device can be further connected to other components in order to form a light emitting apparatus.
- the light-emitting device may be mounted onto a submount with the side of the substrate, or a solder bump or a glue material may be formed between the submount and the light-emitting device, therefore a light-emitting apparatus is formed.
- the submount further comprises the circuit layout electrically connected to the electrode of the light-emitting device via an electrical conductive structure such as a metal wire.
- a light-emitting element comprises: a light-emitting stack configured to emit light; and a transparent substrate comprising an upper surface on which the light-emitting stack is formed, a bottom surface opposite to the upper surface, and a side surface connecting the upper surface with the bottom surface, wherein the side surface comprises a first arc portion, a second arc portion, and a transition portion between the first arc portion and the second arc portion.
- a method for manufacturing a light-emitting element comprises steps of: providing a wafer comprising an upper surface and a bottom surface; forming a light-emitting stack on the upper surface of the wafer; cutting the wafer from the bottom surface of the wafer to form a first arc portion by a water-jet laser having a first beam size; cutting the wafer from the upper surface of the wafer to form a second arc portion by the water-jet laser having a second beam size; dividing the wafer and the light-emitting stack into a plurality of light-emitting dies, wherein one of the light-emitting dies comprises a side surface having the first arc portion and the second arc portion.
- FIGS. 1A to 1G show a manufacturing method of a light-emitting element in accordance with a first embodiment of the present application.
- FIG. 2 shows a schematic structure of a light-emitting element in accordance with a first embodiment of the present application.
- FIG. 3 shows a schematic structure of a light-emitting element in accordance with a third embodiment of the present application.
- FIG. 4 shows a schematic structure of a light-emitting element in accordance with a forth embodiment of the present application.
- FIG. 5 shows a schematic structure of a light-emitting element in accordance with a five embodiment of the present application.
- a manufacturing method of a light-emitting element in accordance with a first embodiment of the present application is disclosed.
- a wafer-level element 101 comprising a wafer 102 and a light-emitting stack 104 is provided.
- the wafer 102 comprises an upper surface 102 a and a bottom surface 102 b opposite to the upper surface.
- the light-emitting stack 104 is disposed on the upper surface 102 a of the wafer 102 .
- the wafer 102 can be a single-crystalline substrate for growing the light-emitting stack 104 by epitaxial growth method, such as MOCVD.
- the wafer 102 can comprise an insulating material such as sapphire, or an electrically-conductive material such as SiC, ZnO, GaP or GaAs.
- the light-emitting stack 104 can comprise III-V semiconductor material, for example, Al x In y Ga (1-x-y )N or Al x In y Ga (1-x-y )P, wherein 0 ⁇ x, y ⁇ 1 ; (x+y) ⁇ 1.
- a plurality of trenches 103 is formed for dividing the light-emitting stack into multiple light-emitting blocks 104 a and exposing part of the upper surface 102 a of the wafer 102 .
- the trenches 103 can be formed by laser-scribing or lithography.
- a water-jet laser 90 with a first beam size can be applied to the bottom surface 102 a of the wafer 102 .
- the water-jet laser 90 cuts the wafer 102 in accordance with the pattern of the trenches 103 , therefore a portion of the wafer 102 is removed from the bottom surface 102 a.
- the water-jet laser 90 with a second beam size can be further applied to the upper surface 102 b of the wafer 102 to cut the wafer 102 in accordance with the pattern of the trenches 103 .
- the wafer After scribing the wafer 102 by the water-jet laser 90 , the wafer is not separated completely but forms a plurality of units, and a thinned portion 102 c is formed which connects the units.
- the first beam size can be bigger than the second beam size to avoid damaging the light-emitting block 104 a on the upper surface 102 b.
- a reflective structure 103 can be formed on the bottom surface 102 a conformably.
- a force F can be applied to the bottom surface 102 a to break the thinned portion 102 c, therefore the water 102 is divided into a plurality of light-emitting dies 100 .
- the water-jet laser 90 can be generated from a water-jet laser device 800 .
- the water-jet laser device 800 comprising a focusing lens 802 for focusing a laser 901 , a water chamber 804 having an entrance 806 for receiving high-pressure water flow, and a nozzle 808 connected to the water chamber 804 to generate a water jet 902 .
- the water-jet laser 90 comprises the water jet 902 and the laser 901 traveling in the water jet 902 .
- the light-emitting element 200 comprises: a light-emitting stack 202 configured to emit light L; and a transparent substrate 204 comprising an upper surface 204 b on which the light-emitting stack 202 is formed, a bottom surface 204 a opposite to the upper surface 204 b, and a side surface 204 c connecting the upper surface 204 b with the bottom surface 204 a, wherein the side surface 204 c comprises a first arc portion 204 d, a second arc portion 204 e, and a transition portion 204 f between the first arc portion 204 d and the second arc portion 204 e.
- the first arc portion 204 d can be shaped by the water-jet laser 90 of FIG. 1C
- the second arc portion 204 e can be shaped by the water-jet laser 90 of FIG. 1D
- the first arc portion 204 d can be closer to the bottom surface 204 a than the second arc portion 204 b.
- the transition portion 204 f can be a flat surface resulted from breaking the thinned portion 102 c of FIG. 1F .
- the transition portion 204 f can be the outmost part of the side surface 204 c in a lateral direction.
- the transition portion 204 f can have a width wider than that of the bottom surface 204 a and the upper surface 204 b in a cross-sectional view.
- Each of the first arc portion 204 d and the second arc portion 204 e comprises a negative curvature, and the curvature of the first arc portion 204 d is different from that of the second arc portion 204 e.
- the light-emitting stack can comprise single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH) or multi-quantum well (MQW).
- the light-emitting stack can comprise a first semiconductor layer (not shown), a second semiconductor layer (not shown) and an active layer (not shown) between the first semiconductor layer and the second semiconductor layer.
- the first semiconductor layer can be closer to the transparent substrate 204 than the second semiconductor layer, the first semiconductor layer can be n-type and the second semiconductor layer can be p-type, and a mesa comprising an exposed surface of the first semiconductor layer can be formed by removing a portion of the second semiconductor layer and the active layer.
- a first electrode can be disposed on the mesa and a second electrode can be disposed on the second semiconductor layer.
- the light-emitting element 300 further comprises a reflective structure 310 conformably formed on the bottom surface 304 a and the first arc portion 304 d.
- the reflective structure 310 can comprise DBR and/or a reflective metal layer.
- the light-emitting element 400 comprises a transition portion 404 f being a vertex between the first arc portion 404 d and the second arc portion 404 e, and a first distance d 1 from the upper surface 404 b to the transition portion 404 f can be shorter than a second distance d 2 from the bottom surface 404 a to the transition portion 404 f.
- the transition portion 404 f can be formed by continuing cutting the wafer 102 with the water-jet laser 90 until penetrating through the wafer 102 completely.
- the light-emitting element 500 further comprises a third arc portion 504 c between the first arc portion 504 a and second arc portion 504 b.
- the third arc portion 504 c can have a curvature center different from that of the first arc portion 504 a and second arc portion 504 b.
- the third arc portion 504 c can be formed by reducing the first beam size of the water-jet laser 90 shown in FIG. 1C to a third beam size after forming the first arc portion 504 a.
- a plurality of arc portions having different curvatures can be formed.
Abstract
A light-emitting element comprises: a light-emitting stack configured to emit light; and a transparent substrate comprising an upper surface on which the light-emitting stack is formed, a bottom surface opposite to the upper surface, and a side surface connecting the upper surface with the bottom surface, wherein the side surface comprises a first arc portion, a second arc portion, and a transition portion between the first arc portion from and second arc portion.
Description
- The application relates to a light-emitting element and the manufacturing method thereof, in particular, relates to a light-emitting element having a shaped side surface and the manufacturing method thereof.
- The light radiation theory of light emitting diode (LED) is to generate light from the energy released by the electron moving between an n-type semiconductor and a p-type semiconductor. Because the light radiation theory of LED is different from the incandescent light which heats the filament, the LED is called a “cold” light source. Moreover, the LED is more sustainable, longevous, light and handy, and has less power-consumption, therefore it is considered as another option of the light source for the illumination markets. The LED applies to various applications like the traffic signal, backlight module, street light, and medical instruments, and is gradually replacing the traditional lighting sources.
- A light-emitting device may include a substrate, a light-emitting stack including an n-type semiconductor layer, an active layer and a p-type semiconductor layer. The light-emitting stack may have roughened structure on the surface thereof to enhance light extraction.
- In addition, the light emitting device can be further connected to other components in order to form a light emitting apparatus. The light-emitting device may be mounted onto a submount with the side of the substrate, or a solder bump or a glue material may be formed between the submount and the light-emitting device, therefore a light-emitting apparatus is formed. Besides, the submount further comprises the circuit layout electrically connected to the electrode of the light-emitting device via an electrical conductive structure such as a metal wire.
- A light-emitting element comprises: a light-emitting stack configured to emit light; and a transparent substrate comprising an upper surface on which the light-emitting stack is formed, a bottom surface opposite to the upper surface, and a side surface connecting the upper surface with the bottom surface, wherein the side surface comprises a first arc portion, a second arc portion, and a transition portion between the first arc portion and the second arc portion.
- A method for manufacturing a light-emitting element, comprises steps of: providing a wafer comprising an upper surface and a bottom surface; forming a light-emitting stack on the upper surface of the wafer; cutting the wafer from the bottom surface of the wafer to form a first arc portion by a water-jet laser having a first beam size; cutting the wafer from the upper surface of the wafer to form a second arc portion by the water-jet laser having a second beam size; dividing the wafer and the light-emitting stack into a plurality of light-emitting dies, wherein one of the light-emitting dies comprises a side surface having the first arc portion and the second arc portion.
-
FIGS. 1A to 1G show a manufacturing method of a light-emitting element in accordance with a first embodiment of the present application. -
FIG. 2 shows a schematic structure of a light-emitting element in accordance with a first embodiment of the present application. -
FIG. 3 shows a schematic structure of a light-emitting element in accordance with a third embodiment of the present application. -
FIG. 4 shows a schematic structure of a light-emitting element in accordance with a forth embodiment of the present application. -
FIG. 5 shows a schematic structure of a light-emitting element in accordance with a five embodiment of the present application. - As shown in
FIGS. 1A to 1G , a manufacturing method of a light-emitting element in accordance with a first embodiment of the present application is disclosed. Referring toFIG. 1A , a wafer-level element 101 comprising awafer 102 and a light-emitting stack 104 is provided. Thewafer 102 comprises anupper surface 102 a and abottom surface 102 b opposite to the upper surface. The light-emitting stack 104 is disposed on theupper surface 102 a of thewafer 102. Thewafer 102 can be a single-crystalline substrate for growing the light-emittingstack 104 by epitaxial growth method, such as MOCVD. Thewafer 102 can comprise an insulating material such as sapphire, or an electrically-conductive material such as SiC, ZnO, GaP or GaAs. The light-emittingstack 104 can comprise III-V semiconductor material, for example, AlxInyGa(1-x-y)N or AlxInyGa(1-x-y)P, wherein 0≦x, y≦1 ; (x+y) ≦1. Referring toFIG. 1B , a plurality oftrenches 103 is formed for dividing the light-emitting stack into multiple light-emittingblocks 104 a and exposing part of theupper surface 102 a of thewafer 102. Thetrenches 103 can be formed by laser-scribing or lithography. - Referring to
FIG. 1C , a water-jet laser 90 with a first beam size can be applied to thebottom surface 102 a of thewafer 102. The water-jet laser 90 cuts thewafer 102 in accordance with the pattern of thetrenches 103, therefore a portion of thewafer 102 is removed from thebottom surface 102 a. Referring toFIG. 1D , the water-jet laser 90 with a second beam size can be further applied to theupper surface 102 b of thewafer 102 to cut thewafer 102 in accordance with the pattern of thetrenches 103. After scribing thewafer 102 by the water-jet laser 90, the wafer is not separated completely but forms a plurality of units, and athinned portion 102 c is formed which connects the units. The first beam size can be bigger than the second beam size to avoid damaging the light-emittingblock 104 a on theupper surface 102 b. Referring toFIG. 1E , areflective structure 103 can be formed on thebottom surface 102 a conformably. - Referring to
FIG. 1F , a force F can be applied to thebottom surface 102 a to break thethinned portion 102 c, therefore thewater 102 is divided into a plurality of light-emitting dies 100. - Referring to
FIG. 1G , the water-jet laser 90 can be generated from a water-jet laser device 800. The water-jet laser device 800 comprising a focusinglens 802 for focusing alaser 901, awater chamber 804 having anentrance 806 for receiving high-pressure water flow, and anozzle 808 connected to thewater chamber 804 to generate awater jet 902. The water-jet laser 90 comprises thewater jet 902 and thelaser 901 traveling in thewater jet 902. - As shown in
FIG. 2 , a light-emitting element in accordance with a first embodiment of the present application is disclosed. The light-emittingelement 200 comprises: a light-emitting stack 202 configured to emit light L; and atransparent substrate 204 comprising anupper surface 204 b on which the light-emitting stack 202 is formed, abottom surface 204 a opposite to theupper surface 204 b, and aside surface 204 c connecting theupper surface 204 b with thebottom surface 204 a, wherein theside surface 204 c comprises afirst arc portion 204 d, asecond arc portion 204 e, and atransition portion 204 f between thefirst arc portion 204 d and thesecond arc portion 204 e. Thefirst arc portion 204 d can be shaped by the water-jet laser 90 ofFIG. 1C , thesecond arc portion 204 e can be shaped by the water-jet laser 90 ofFIG. 1D , and thefirst arc portion 204 d can be closer to thebottom surface 204 a than thesecond arc portion 204 b. Thetransition portion 204 f can be a flat surface resulted from breaking thethinned portion 102 c ofFIG. 1F . Thetransition portion 204 f can be the outmost part of theside surface 204 c in a lateral direction. To put it differently, thetransition portion 204 f can have a width wider than that of thebottom surface 204 a and theupper surface 204 b in a cross-sectional view. Each of thefirst arc portion 204 d and thesecond arc portion 204 e comprises a negative curvature, and the curvature of thefirst arc portion 204 d is different from that of thesecond arc portion 204 e. The light-emitting stack can comprise single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH) or multi-quantum well (MQW). The light-emitting stack can comprise a first semiconductor layer (not shown), a second semiconductor layer (not shown) and an active layer (not shown) between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer can be closer to thetransparent substrate 204 than the second semiconductor layer, the first semiconductor layer can be n-type and the second semiconductor layer can be p-type, and a mesa comprising an exposed surface of the first semiconductor layer can be formed by removing a portion of the second semiconductor layer and the active layer. A first electrode can be disposed on the mesa and a second electrode can be disposed on the second semiconductor layer. - As shown in
FIG. 3 , a light-emitting element in accordance with a second embodiment of the present application is disclosed. In comparison with the first embodiment, the light-emittingelement 300 further comprises areflective structure 310 conformably formed on thebottom surface 304 a and thefirst arc portion 304 d. Thereflective structure 310 can comprise DBR and/or a reflective metal layer. - As shown in
FIG. 4 , a light-emitting element in accordance with a third embodiment of the present application is disclosed. In comparison with the first embodiment, the light-emittingelement 400 comprises atransition portion 404 f being a vertex between thefirst arc portion 404 d and thesecond arc portion 404 e, and a first distance d1 from theupper surface 404 b to thetransition portion 404 f can be shorter than a second distance d2 from thebottom surface 404 a to thetransition portion 404 f. Further referring toFIGS. 1D and 1E , thetransition portion 404 f can be formed by continuing cutting thewafer 102 with the water-jet laser 90 until penetrating through thewafer 102 completely. - As shown in
FIG. 5 , a light-emitting element in accordance with a fourth embodiment of the present application is disclosed. In comparison with the third embodiment, the light-emittingelement 500 further comprises athird arc portion 504 c between thefirst arc portion 504 a andsecond arc portion 504 b. Thethird arc portion 504 c can have a curvature center different from that of thefirst arc portion 504 a andsecond arc portion 504 b. Thethird arc portion 504 c can be formed by reducing the first beam size of the water-jet laser 90 shown inFIG. 1C to a third beam size after forming thefirst arc portion 504 a. Similarly, by changing the first beam size of thewater jet laser 90 shown inFIG. 1C or the second beam size shown inFIG. 1D , a plurality of arc portions having different curvatures can be formed. - Although the present application has been explained above, it is not the limitation of the range, the sequence in practice, the material in practice, or the method in practice. Any modification or decoration for present application is not detached from the spirit and the range of such.
Claims (20)
1. A light-emitting element, comprising:
a light-emitting stack configured to emit light; and
a transparent substrate comprising an upper surface on which the light-emitting stack is formed, a bottom surface opposite to the upper surface, and a side surface connecting the upper surface with the bottom surface, wherein the side surface comprises a first arc portion, a second arc portion, and a transition portion between the first arc portion and the second arc portion.
2. The light-emitting element according to claim 1 , wherein the first arc portion is closer to the bottom surface than the second arc portion.
3. The light-emitting element according to claim 2 , wherein the transition portion is the outmost part of the side surface in a lateral direction.
4. The light-emitting element according to claim 3 , wherein the bottom surface comprises a first width, the transition portion of the side surface comprises a second width greater than the first width, and the upper surface comprises a third width smaller than the second width in a cross-sectional view.
5. The light-emitting element according to claim 3 , further comprising a reflective structure conformably formed on the bottom surface and the first arc portion of the side surface.
6. The light-emitting element according to claim 5 , wherein the reflective structure comprises a DBR.
7. The light-emitting element according to claim 1 , wherein the transition portion comprises a flat surface.
8. The light-emitting element according to claim 1 , wherein the transition portion comprises a vertex.
9. The light-emitting element according to claim 3 , wherein the side surface further comprises a plurality of arc portions and a plurality of transition portions separating the plurality of arc portions from each other.
10. The light-emitting element according to claim 1 , wherein the first arc portion comprises a curvature different from that of the second arc portion.
11. The light-emitting element according to claim 1 , wherein each of the first arc portion and the second arc portion comprises a negative curvature.
12. The light-emitting element according to claim 1 , wherein the transparent substrate is single-crystalline, and the light-emitting stack is an epitaxial structure.
13. A method for manufacturing a light-emitting element, comprising the steps of:
providing a wafer comprising an upper surface and a bottom surface;
forming a light-emitting stack on the upper surface of the wafer;
cutting the wafer from the bottom surface of the wafer to form a first arc portion by a water-jet laser having a first beam size;
cutting the wafer from the upper surface of the wafer to form a second arc portion by the water-jet laser having a second beam size; and
dividing the wafer and the light-emitting stack into a plurality of light-emitting dies, wherein one of the light-emitting dies comprises a side surface having the first arc portion and the second arc portion.
14. The method according to claim 13 , further comprising forming a plurality of trenches for dividing the light-emitting stack into multiple light-emitting blocks and exposing the upper surface of the wafer before cutting the wafer by the water jet laser.
15. The method according to claim 13 , wherein the wafer comprises a plurality of thinned portions after being cut by the water jet laser, and the method further comprises breaking the thinned portions to divide the wafer into the plurality of light-emitting elements.
16. The method according to claim 14 , wherein the step of dividing the wafer and the light-emitting stack into a plurality of light-emitting dies comprises continuing cutting the wafer by the water-jet laser to penetrate through the wafer completely.
17. The method according to claim 13 , wherein the water-jet laser comprises a water jet and a laser traveling in the water jet.
18. The method according to claim 13 , further comprising cutting the wafer from the bottom surface of the wafer to form a third arc portion by the water-jet laser having a third beam size different from the first beam size.
19. The method according to claim 18 , wherein the first beam size is bigger than one of the second beam size and the third beam size.
20. The method according to claim 13 , further comprising forming a reflective structure on the bottom surface and the first arc portion before dividing the wafer and the light-emitting stack into a plurality of light-emitting dies.
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US15/149,837 US9966498B2 (en) | 2014-07-08 | 2016-05-09 | Method for manufacturing light-emitting element |
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CN106057999A (en) * | 2016-07-26 | 2016-10-26 | 聚灿光电科技股份有限公司 | LED chip and its manufacturing method |
CN106067498A (en) * | 2016-07-26 | 2016-11-02 | 聚灿光电科技股份有限公司 | LED chip and manufacture method thereof |
US20190103323A1 (en) * | 2017-09-29 | 2019-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of Cutting Metal Gates and Structures formed Thereof |
CN110931615A (en) * | 2019-12-19 | 2020-03-27 | 马鞍山杰生半导体有限公司 | Deep ultraviolet LED epitaxial structure and preparation method thereof |
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US20160254409A1 (en) | 2016-09-01 |
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