ATE279789T1 - Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen - Google Patents

Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen

Info

Publication number
ATE279789T1
ATE279789T1 AT98945787T AT98945787T ATE279789T1 AT E279789 T1 ATE279789 T1 AT E279789T1 AT 98945787 T AT98945787 T AT 98945787T AT 98945787 T AT98945787 T AT 98945787T AT E279789 T1 ATE279789 T1 AT E279789T1
Authority
AT
Austria
Prior art keywords
group iii
diode
light emitting
emitting diode
high reliability
Prior art date
Application number
AT98945787T
Other languages
English (en)
Inventor
David B Slater Jr
Gerald H Negley
John Adam Edmond
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE279789T1 publication Critical patent/ATE279789T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
AT98945787T 1997-08-29 1998-08-28 Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen ATE279789T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92040997A 1997-08-29 1997-08-29
PCT/US1998/017849 WO1999010936A2 (en) 1997-08-29 1998-08-28 Robust group iii nitride light emitting diode for high reliability in standard applications

Publications (1)

Publication Number Publication Date
ATE279789T1 true ATE279789T1 (de) 2004-10-15

Family

ID=25443701

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98945787T ATE279789T1 (de) 1997-08-29 1998-08-28 Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen

Country Status (11)

Country Link
US (1) US6946682B2 (de)
EP (1) EP1018169B1 (de)
JP (2) JP4597363B2 (de)
KR (1) KR100651145B1 (de)
CN (1) CN1129192C (de)
AT (1) ATE279789T1 (de)
AU (1) AU9295098A (de)
CA (1) CA2299379C (de)
DE (1) DE69827025T2 (de)
ES (1) ES2226169T3 (de)
WO (1) WO1999010936A2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999005728A1 (en) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
WO1999010936A2 (en) * 1997-08-29 1999-03-04 Cree Inc. Robust group iii nitride light emitting diode for high reliability in standard applications
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (de) 1999-03-04 2009-12-16 Nichia Corporation Nitridhalbleiterlaserelement
US6926435B2 (en) * 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6683327B2 (en) 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6900067B2 (en) 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
JP2006511944A (ja) * 2002-12-20 2006-04-06 クリー　インコーポレイテッド 半導体メサ構造および導電性接合部を含む電子素子ならびに関連素子を形成する方法
US20070241352A1 (en) * 2004-06-18 2007-10-18 Showa Denko K. K. Group III Nitride Semiconductor Light Emitting Device
US7432536B2 (en) * 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
EP1974389A4 (de) 2006-01-05 2010-12-29 Illumitex Inc Separate optische vorrichtung zur lichtorientierung von einer led
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
WO2009100358A1 (en) 2008-02-08 2009-08-13 Illumitex, Inc. System and method for emitter layer shaping
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8969198B2 (en) 2012-06-04 2015-03-03 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
WO2014011964A1 (en) * 2012-07-12 2014-01-16 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860069A (en) * 1983-09-24 1989-08-22 Semiconductor Energy Laboratory Co., Ltd. Non-single-cry stal semiconductor light emitting device
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
JPH04264781A (ja) 1991-02-20 1992-09-21 Eastman Kodak Japan Kk 発光ダイオードアレイ
JPH04365382A (ja) * 1991-06-13 1992-12-17 Toshiba Corp 半導体発光装置及びその駆動方法
JP2560963B2 (ja) * 1993-03-05 1996-12-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
GB2277405A (en) * 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
DE69433926T2 (de) * 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5404282A (en) * 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07326823A (ja) * 1994-05-30 1995-12-12 Canon Inc 光半導体素子及びその製造方法
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JP2877063B2 (ja) * 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
WO1999010936A2 (en) * 1997-08-29 1999-03-04 Cree Inc. Robust group iii nitride light emitting diode for high reliability in standard applications

Also Published As

Publication number Publication date
CN1269056A (zh) 2000-10-04
CA2299379C (en) 2006-05-30
AU9295098A (en) 1999-03-16
ES2226169T3 (es) 2005-03-16
JP4597363B2 (ja) 2010-12-15
WO1999010936A2 (en) 1999-03-04
KR20010023492A (ko) 2001-03-26
CA2299379A1 (en) 1999-03-04
US20040026707A1 (en) 2004-02-12
EP1018169A2 (de) 2000-07-12
JP2001514451A (ja) 2001-09-11
US6946682B2 (en) 2005-09-20
KR100651145B1 (ko) 2006-11-28
CN1129192C (zh) 2003-11-26
DE69827025T2 (de) 2005-09-08
JP2009239294A (ja) 2009-10-15
EP1018169B1 (de) 2004-10-13
WO1999010936A3 (en) 1999-05-14
DE69827025D1 (de) 2004-11-18

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