WO2002089217A3 - Halbleiterchip für die optoelektronik - Google Patents

Halbleiterchip für die optoelektronik Download PDF

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Publication number
WO2002089217A3
WO2002089217A3 PCT/DE2002/001530 DE0201530W WO02089217A3 WO 2002089217 A3 WO2002089217 A3 WO 2002089217A3 DE 0201530 W DE0201530 W DE 0201530W WO 02089217 A3 WO02089217 A3 WO 02089217A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor chip
optoelectronics
layer sequence
semiconductor layer
semiconductor
Prior art date
Application number
PCT/DE2002/001530
Other languages
English (en)
French (fr)
Other versions
WO2002089217A2 (de
Inventor
Ralph Wirth
Original Assignee
Osram Opto Semiconductors Gmbh
Ralph Wirth
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Ralph Wirth filed Critical Osram Opto Semiconductors Gmbh
Priority to JP2002586410A priority Critical patent/JP2004524710A/ja
Priority to DE10291889T priority patent/DE10291889B4/de
Priority to US10/476,121 priority patent/US7145181B2/en
Publication of WO2002089217A2 publication Critical patent/WO2002089217A2/de
Publication of WO2002089217A3 publication Critical patent/WO2002089217A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Ein Halbleiterchip, insbesondere eine Leuchtdiode, weist ein Substrat (2) auf, auf dem eine Halbleiterschichtenfolge (3) mit einer aktiven Zone (5) aufgebracht ist. Oberhalb der Halbleiterschichtenfolge (3) befindet sich eine gestufte, fresnellinsenartig strukturierte Fensterschicht (6), die hinsichtlich der Strahlungsauskopplung die Funktion einer Halbkugellinse (7) hat. Dadurch ergibt sich ein Halbleiterchip mit besonders hohem Auskoppelwirkungsgrad.
PCT/DE2002/001530 2001-04-27 2002-04-26 Halbleiterchip für die optoelektronik WO2002089217A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002586410A JP2004524710A (ja) 2001-04-27 2002-04-26 オプトエレクトロニクス用半導体チップ
DE10291889T DE10291889B4 (de) 2001-04-27 2002-04-26 Halbleiterchip für die Optoelektronik
US10/476,121 US7145181B2 (en) 2001-04-27 2002-04-26 Semiconductor chip for optoelectronics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10120703A DE10120703A1 (de) 2001-04-27 2001-04-27 Halbleiterchip für die Optoelektronik
DE10120703.4 2001-04-27

Publications (2)

Publication Number Publication Date
WO2002089217A2 WO2002089217A2 (de) 2002-11-07
WO2002089217A3 true WO2002089217A3 (de) 2003-01-09

Family

ID=7682952

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/001530 WO2002089217A2 (de) 2001-04-27 2002-04-26 Halbleiterchip für die optoelektronik

Country Status (5)

Country Link
US (1) US7145181B2 (de)
JP (1) JP2004524710A (de)
DE (2) DE10120703A1 (de)
TW (1) TW541725B (de)
WO (1) WO2002089217A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214566B4 (de) * 2002-04-02 2007-05-24 G.L.I. Global Light Industries Gmbh Homogen paralleles Licht emittierende Leuchtdiode
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102006024220A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
GB0610468D0 (en) * 2006-05-26 2006-07-05 Rolls Royce Plc A method of manufacturing a component
DE102007049799A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN101499507B (zh) * 2008-02-01 2011-11-09 富准精密工业(深圳)有限公司 发光二极管
DE102008045331A1 (de) * 2008-09-01 2010-03-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8450767B2 (en) 2009-05-08 2013-05-28 Epistar Corporation Light-emitting device
US7906795B2 (en) 2009-05-08 2011-03-15 Epistar Corporation Light-emitting device
DE102010027875A1 (de) * 2010-04-16 2011-10-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI513038B (zh) * 2011-01-12 2015-12-11 Epistar Corp 發光裝置
CN103969740A (zh) * 2013-01-31 2014-08-06 鸿富锦精密工业（深圳）有限公司 扩散镜片、光源模组及面光源
DE102015116595A1 (de) 2015-09-30 2017-03-30 Osram Opto Semiconductors Gmbh Bauelement mit einem Licht emittierenden Halbleiterchip

Citations (8)

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Publication number Priority date Publication date Assignee Title
DE2727508A1 (de) * 1977-06-18 1979-01-04 Siemens Ag Lichtemittierende diode mit hohem wirkungsgrad
DE2755433A1 (de) * 1977-12-13 1979-06-21 Licentia Gmbh Strahlungsemittierende halbleiterdiode
EP0101368A2 (de) * 1982-08-10 1984-02-22 Thomson-Csf Monolitische Vereinigung einer Lumineszenzdiode mit Linsen
DE19709228A1 (de) * 1996-03-22 1997-09-25 Hewlett Packard Co Geordnete Grenzflächentexturierung für ein lichtemittierendes Bauelement
US5696389A (en) * 1994-03-15 1997-12-09 Kabushiki Kaisha Toshiba Light-emitting semiconductor device
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
JP2001028456A (ja) * 1999-07-14 2001-01-30 Victor Co Of Japan Ltd 半導体発光素子
WO2001080322A2 (de) * 2000-04-19 2001-10-25 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und verfahren zu dessen herstellung

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JPS63283174A (ja) * 1987-05-15 1988-11-21 Omron Tateisi Electronics Co 発光ダイオ−ド
JPS6442870A (en) * 1987-08-10 1989-02-15 Nec Corp Manufacture of optical semiconductor element
JP2708183B2 (ja) * 1988-07-21 1998-02-04 シャープ株式会社 化合物半導体発光素子
JPH02119275A (ja) * 1988-10-28 1990-05-07 Nec Corp 発光ダイオード
US5087949A (en) 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
US5101454A (en) * 1991-02-20 1992-03-31 At&T Bell Laboratories Light emitting diode with multifaceted reflector to increase coupling efficiency and alignment tolerance
US5233204A (en) * 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses
JPH06338630A (ja) * 1993-05-28 1994-12-06 Omron Corp 半導体発光素子、並びに当該発光素子を用いた光学検知装置、光学的情報処理装置、光結合装置及び発光装置
DE19600306C1 (de) * 1996-01-05 1997-04-10 Siemens Ag Halbleiter-Bauelement, insb. mit einer optoelektronischen Schaltung bzw. Anordnung
US5926320A (en) * 1997-05-29 1999-07-20 Teldedyne Lighting And Display Products, Inc. Ring-lens system for efficient beam formation
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US6737681B2 (en) * 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2727508A1 (de) * 1977-06-18 1979-01-04 Siemens Ag Lichtemittierende diode mit hohem wirkungsgrad
DE2755433A1 (de) * 1977-12-13 1979-06-21 Licentia Gmbh Strahlungsemittierende halbleiterdiode
EP0101368A2 (de) * 1982-08-10 1984-02-22 Thomson-Csf Monolitische Vereinigung einer Lumineszenzdiode mit Linsen
US5696389A (en) * 1994-03-15 1997-12-09 Kabushiki Kaisha Toshiba Light-emitting semiconductor device
DE19709228A1 (de) * 1996-03-22 1997-09-25 Hewlett Packard Co Geordnete Grenzflächentexturierung für ein lichtemittierendes Bauelement
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
JP2001028456A (ja) * 1999-07-14 2001-01-30 Victor Co Of Japan Ltd 半導体発光素子
WO2001080322A2 (de) * 2000-04-19 2001-10-25 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und verfahren zu dessen herstellung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
OPPLIGER Y ET AL: "One-step 3D shaping using a gray-tone mask", MICROELECTRONIC ENGINEERING, 1994, vol. 23, pages 449 - 454, XP000615045, ISSN: 0167-9317 *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 16 8 May 2001 (2001-05-08) *

Also Published As

Publication number Publication date
DE10291889D2 (de) 2004-04-15
TW541725B (en) 2003-07-11
US7145181B2 (en) 2006-12-05
US20040195641A1 (en) 2004-10-07
JP2004524710A (ja) 2004-08-12
DE10291889B4 (de) 2013-02-21
DE10120703A1 (de) 2002-10-31
WO2002089217A2 (de) 2002-11-07

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