NO20011497L - Kontakt av höydopet p-type for en frontbelyst, rask fotodiode - Google Patents
Kontakt av höydopet p-type for en frontbelyst, rask fotodiodeInfo
- Publication number
- NO20011497L NO20011497L NO20011497A NO20011497A NO20011497L NO 20011497 L NO20011497 L NO 20011497L NO 20011497 A NO20011497 A NO 20011497A NO 20011497 A NO20011497 A NO 20011497A NO 20011497 L NO20011497 L NO 20011497L
- Authority
- NO
- Norway
- Prior art keywords
- dipped
- lit
- type contact
- photo diode
- fast photo
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Light Receiving Elements (AREA)
- Hybrid Cells (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/161,097 US6262465B1 (en) | 1998-09-25 | 1998-09-25 | Highly-doped P-type contact for high-speed, front-side illuminated photodiode |
| PCT/US1999/022339 WO2000019544A1 (en) | 1998-09-25 | 1999-09-24 | Highly-doped p-type contact for high-speed, front-side illuminated photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20011497D0 NO20011497D0 (no) | 2001-03-23 |
| NO20011497L true NO20011497L (no) | 2001-05-23 |
Family
ID=22579808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20011497A NO20011497L (no) | 1998-09-25 | 2001-03-23 | Kontakt av höydopet p-type for en frontbelyst, rask fotodiode |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6262465B1 (no) |
| EP (1) | EP1116280B1 (no) |
| JP (1) | JP4755341B2 (no) |
| KR (1) | KR100660471B1 (no) |
| AT (1) | ATE376706T1 (no) |
| AU (1) | AU765715B2 (no) |
| CA (1) | CA2345153C (no) |
| DE (1) | DE69937406T2 (no) |
| NO (1) | NO20011497L (no) |
| WO (1) | WO2000019544A1 (no) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6518080B2 (en) | 2001-06-19 | 2003-02-11 | Sensors Unlimited, Inc. | Method of fabricating low dark current photodiode arrays |
| US6955933B2 (en) * | 2001-07-24 | 2005-10-18 | Lumileds Lighting U.S., Llc | Light emitting diodes with graded composition active regions |
| US7392390B2 (en) * | 2001-12-12 | 2008-06-24 | Valve Corporation | Method and system for binding kerberos-style authenticators to single clients |
| KR100520626B1 (ko) * | 2002-12-05 | 2005-10-10 | 삼성전자주식회사 | 핀 구조의 포토다이오드 |
| JP2004281559A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体発光素子 |
| JP3979378B2 (ja) * | 2003-11-06 | 2007-09-19 | 住友電気工業株式会社 | 半導体発光素子 |
| KR101057208B1 (ko) * | 2005-10-03 | 2011-08-16 | 샤프 가부시키가이샤 | 실리콘계 박막 광전 변환 장치, 그 제조 방법 및 그 제조장치 |
| US20070262296A1 (en) * | 2006-05-11 | 2007-11-15 | Matthias Bauer | Photodetectors employing germanium layers |
| US20080283605A1 (en) * | 2007-05-16 | 2008-11-20 | Sik Piu Kwan | Device and system for a low noise photodiode in a barcode scanner |
| US8983302B2 (en) * | 2009-11-05 | 2015-03-17 | The Boeing Company | Transceiver for plastic optical fiber networks |
| US9105790B2 (en) * | 2009-11-05 | 2015-08-11 | The Boeing Company | Detector for plastic optical fiber networks |
| KR102069891B1 (ko) | 2011-08-31 | 2020-01-28 | 삼성전자주식회사 | 광전 변환 소자 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61172381A (ja) * | 1984-12-22 | 1986-08-04 | Fujitsu Ltd | ＩｎＰ系化合物半導体装置 |
| US5217539A (en) * | 1991-09-05 | 1993-06-08 | The Boeing Company | III-V solar cells and doping processes |
| FR2658307A1 (fr) | 1990-02-13 | 1991-08-16 | Thomson Csf | Guide d'onde optique integre et procede de realisation. |
| US5177628A (en) * | 1990-04-24 | 1993-01-05 | The University Of Colorado Foundation, Inc. | Self-powered optically addressed spatial light modulator |
| FR2676126B1 (fr) | 1991-04-30 | 1993-07-23 | France Telecom | Dispositif optoelectronique a guide optique et photodetecteur integres. |
| JP2781097B2 (ja) * | 1992-01-30 | 1998-07-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5212395A (en) * | 1992-03-02 | 1993-05-18 | At&T Bell Laboratories | P-I-N photodiodes with transparent conductive contacts |
| JPH06163985A (ja) * | 1992-11-24 | 1994-06-10 | Mitsubishi Kasei Corp | Ｉｉｉ −ｖ族化合物を用いた発光及び受光素子 |
| US5818096A (en) * | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
| JP3172996B2 (ja) * | 1997-02-06 | 2001-06-04 | 住友電気工業株式会社 | 半導体受光素子 |
-
1998
- 1998-09-25 US US09/161,097 patent/US6262465B1/en not_active Expired - Lifetime
-
1999
- 1999-09-24 DE DE69937406T patent/DE69937406T2/de not_active Expired - Lifetime
- 1999-09-24 WO PCT/US1999/022339 patent/WO2000019544A1/en active IP Right Grant
- 1999-09-24 KR KR1020017003783A patent/KR100660471B1/ko active IP Right Grant
- 1999-09-24 JP JP2000572949A patent/JP4755341B2/ja not_active Expired - Lifetime
- 1999-09-24 AT AT99949900T patent/ATE376706T1/de not_active IP Right Cessation
- 1999-09-24 EP EP99949900A patent/EP1116280B1/en not_active Expired - Lifetime
- 1999-09-24 AU AU62676/99A patent/AU765715B2/en not_active Expired
- 1999-09-24 CA CA002345153A patent/CA2345153C/en not_active Expired - Lifetime
-
2001
- 2001-03-23 NO NO20011497A patent/NO20011497L/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NO20011497D0 (no) | 2001-03-23 |
| DE69937406T2 (de) | 2008-07-24 |
| KR20010079915A (ko) | 2001-08-22 |
| EP1116280A1 (en) | 2001-07-18 |
| CA2345153A1 (en) | 2000-04-06 |
| JP2002526931A (ja) | 2002-08-20 |
| EP1116280B1 (en) | 2007-10-24 |
| AU6267699A (en) | 2000-04-17 |
| DE69937406D1 (de) | 2007-12-06 |
| ATE376706T1 (de) | 2007-11-15 |
| WO2000019544A9 (en) | 2001-11-01 |
| WO2000019544A1 (en) | 2000-04-06 |
| JP4755341B2 (ja) | 2011-08-24 |
| US6262465B1 (en) | 2001-07-17 |
| AU765715B2 (en) | 2003-09-25 |
| KR100660471B1 (ko) | 2006-12-22 |
| CA2345153C (en) | 2004-03-09 |
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