KR100660471B1 - 고속 정면 조사형 포토 다이오드용의 고도화 도핑된 p형접점 - Google Patents
고속 정면 조사형 포토 다이오드용의 고도화 도핑된 p형접점 Download PDFInfo
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- KR100660471B1 KR100660471B1 KR1020017003783A KR20017003783A KR100660471B1 KR 100660471 B1 KR100660471 B1 KR 100660471B1 KR 1020017003783 A KR1020017003783 A KR 1020017003783A KR 20017003783 A KR20017003783 A KR 20017003783A KR 100660471 B1 KR100660471 B1 KR 100660471B1
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- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 3
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000000835 fiber Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052790 beryllium Inorganic materials 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Light Receiving Elements (AREA)
- Hybrid Cells (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims (27)
- 기판;상기 기판의 표면에 결합된 n-층;상기 n-층의 표면에 결합되고, 상기 기판과 함께 상기 n-층을 샌드위치시키는 i-층;상기 i-층의 표면에 결합되고, 상기 n-층과 함께 상기 i-층을 샌드위치시키며, 100 nm 내지 300 nm의 두께를 갖는, 카본 도핑된 InAlAs p-층; 및상기 p-층의 표면에 결합되고, 상기 i-층과 함께 상기 p-층을 샌드위치시키며, 빛에 대하여 투명하고, 상기 p-층을 대기로부터 밀봉하는 InGaAs 캡층;을 포함하고, 700 nm 내지 1600 nm의 파장을 갖는 전자기 방사에 의해 활성화되는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 최상부의 상기 InGaAs 캡층이 p-형 접점을 형성하기 위해 카본 도핑된 In0.53Ga0.47As를 포함하는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 캡층의 표면에 결합되며 또한 전극에 연결되는 전도성 링을 더 포함하는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 카본 도핑된 InAlAs p-층이 In0.52Al0.48As를 포함하는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 i-층이 In0.53Ga0.47As를 포함하는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 n-층이 In0.52Al0.48As를 포함하는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 카본 도핑은 1 × 1020 cm-3까지의 농도를 갖는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 i-층은 상기 카본 도핑된 p-층과 상기 n-층 사이에 샌드위치된 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 카본 도핑된 p-층이 200 nm 이하의 두께를 갖는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 광 검출기가 광학 스위칭을 위한 원격통신 응용에 이용되며 또한 입사광에 의해 스위칭되는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
- 제 1 항에 있어서, 상기 최상부의 InGaAs 캡층이 In0.53Ga0.47As를 포함하는 것을 특징으로 하는 반도체 p-i-n 광 검출기.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/161,097 | 1998-09-25 | ||
US09/161,097 US6262465B1 (en) | 1998-09-25 | 1998-09-25 | Highly-doped P-type contact for high-speed, front-side illuminated photodiode |
Publications (2)
Publication Number | Publication Date |
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KR20010079915A KR20010079915A (ko) | 2001-08-22 |
KR100660471B1 true KR100660471B1 (ko) | 2006-12-22 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020017003783A KR100660471B1 (ko) | 1998-09-25 | 1999-09-24 | 고속 정면 조사형 포토 다이오드용의 고도화 도핑된 p형접점 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6262465B1 (ko) |
EP (1) | EP1116280B1 (ko) |
JP (1) | JP4755341B2 (ko) |
KR (1) | KR100660471B1 (ko) |
AT (1) | ATE376706T1 (ko) |
AU (1) | AU765715B2 (ko) |
CA (1) | CA2345153C (ko) |
DE (1) | DE69937406T2 (ko) |
NO (1) | NO20011497L (ko) |
WO (1) | WO2000019544A1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6518080B2 (en) | 2001-06-19 | 2003-02-11 | Sensors Unlimited, Inc. | Method of fabricating low dark current photodiode arrays |
US6955933B2 (en) * | 2001-07-24 | 2005-10-18 | Lumileds Lighting U.S., Llc | Light emitting diodes with graded composition active regions |
US7580972B2 (en) * | 2001-12-12 | 2009-08-25 | Valve Corporation | Method and system for controlling bandwidth on client and server |
KR100520626B1 (ko) * | 2002-12-05 | 2005-10-10 | 삼성전자주식회사 | 핀 구조의 포토다이오드 |
JP2004281559A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体発光素子 |
JP3979378B2 (ja) * | 2003-11-06 | 2007-09-19 | 住友電気工業株式会社 | 半導体発光素子 |
EP1933388A1 (en) * | 2005-10-03 | 2008-06-18 | Sharp Kabushiki Kaisha | Silicon-based thin film photoelectric converter, and method and apparatus for manufacturing same |
US20070262296A1 (en) * | 2006-05-11 | 2007-11-15 | Matthias Bauer | Photodetectors employing germanium layers |
US20080283605A1 (en) * | 2007-05-16 | 2008-11-20 | Sik Piu Kwan | Device and system for a low noise photodiode in a barcode scanner |
US9105790B2 (en) * | 2009-11-05 | 2015-08-11 | The Boeing Company | Detector for plastic optical fiber networks |
US8983302B2 (en) * | 2009-11-05 | 2015-03-17 | The Boeing Company | Transceiver for plastic optical fiber networks |
KR102069891B1 (ko) | 2011-08-31 | 2020-01-28 | 삼성전자주식회사 | 광전 변환 소자 |
Citations (2)
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EP0559347A1 (en) * | 1992-03-02 | 1993-09-08 | AT&T Corp. | p-i-n Photodiodes with transparent conductive contacts |
JPH10223920A (ja) * | 1997-02-06 | 1998-08-21 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
Family Cites Families (8)
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JPS61172381A (ja) * | 1984-12-22 | 1986-08-04 | Fujitsu Ltd | InP系化合物半導体装置 |
US5217539A (en) * | 1991-09-05 | 1993-06-08 | The Boeing Company | III-V solar cells and doping processes |
FR2658307A1 (fr) | 1990-02-13 | 1991-08-16 | Thomson Csf | Guide d'onde optique integre et procede de realisation. |
US5177628A (en) * | 1990-04-24 | 1993-01-05 | The University Of Colorado Foundation, Inc. | Self-powered optically addressed spatial light modulator |
FR2676126B1 (fr) | 1991-04-30 | 1993-07-23 | France Telecom | Dispositif optoelectronique a guide optique et photodetecteur integres. |
JP2781097B2 (ja) * | 1992-01-30 | 1998-07-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH06163985A (ja) * | 1992-11-24 | 1994-06-10 | Mitsubishi Kasei Corp | Iii −v族化合物を用いた発光及び受光素子 |
US5818096A (en) * | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
-
1998
- 1998-09-25 US US09/161,097 patent/US6262465B1/en not_active Expired - Lifetime
-
1999
- 1999-09-24 EP EP99949900A patent/EP1116280B1/en not_active Expired - Lifetime
- 1999-09-24 CA CA002345153A patent/CA2345153C/en not_active Expired - Lifetime
- 1999-09-24 AU AU62676/99A patent/AU765715B2/en not_active Expired
- 1999-09-24 AT AT99949900T patent/ATE376706T1/de not_active IP Right Cessation
- 1999-09-24 DE DE69937406T patent/DE69937406T2/de not_active Expired - Lifetime
- 1999-09-24 WO PCT/US1999/022339 patent/WO2000019544A1/en active IP Right Grant
- 1999-09-24 KR KR1020017003783A patent/KR100660471B1/ko active IP Right Grant
- 1999-09-24 JP JP2000572949A patent/JP4755341B2/ja not_active Expired - Lifetime
-
2001
- 2001-03-23 NO NO20011497A patent/NO20011497L/no unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0559347A1 (en) * | 1992-03-02 | 1993-09-08 | AT&T Corp. | p-i-n Photodiodes with transparent conductive contacts |
JPH10223920A (ja) * | 1997-02-06 | 1998-08-21 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
Also Published As
Publication number | Publication date |
---|---|
US6262465B1 (en) | 2001-07-17 |
DE69937406D1 (de) | 2007-12-06 |
CA2345153A1 (en) | 2000-04-06 |
AU6267699A (en) | 2000-04-17 |
CA2345153C (en) | 2004-03-09 |
JP2002526931A (ja) | 2002-08-20 |
AU765715B2 (en) | 2003-09-25 |
EP1116280B1 (en) | 2007-10-24 |
ATE376706T1 (de) | 2007-11-15 |
NO20011497D0 (no) | 2001-03-23 |
DE69937406T2 (de) | 2008-07-24 |
KR20010079915A (ko) | 2001-08-22 |
JP4755341B2 (ja) | 2011-08-24 |
NO20011497L (no) | 2001-05-23 |
WO2000019544A9 (en) | 2001-11-01 |
EP1116280A1 (en) | 2001-07-18 |
WO2000019544A1 (en) | 2000-04-06 |
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