JP2013229393A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2013229393A JP2013229393A JP2012099046A JP2012099046A JP2013229393A JP 2013229393 A JP2013229393 A JP 2013229393A JP 2012099046 A JP2012099046 A JP 2012099046A JP 2012099046 A JP2012099046 A JP 2012099046A JP 2013229393 A JP2013229393 A JP 2013229393A
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- emitting device
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- 239000000758 substrate Substances 0.000 claims abstract description 163
- 239000013078 crystal Substances 0.000 claims abstract description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 8
- 238000000605 extraction Methods 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 133
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 42
- 239000004065 semiconductor Substances 0.000 description 23
- 239000011247 coating layer Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明の一態様に係る発光装置は、基板2及び基板2上の側壁3を有するケース1と、基板2上の側壁3に囲まれた領域に搭載され、基板111、及び発光層を含む結晶層112を有する、基板2に対して垂直な方向から見た平面形状が長方形の発光素子11と、発光素子11と側壁3との間に位置する、基板111よりも屈折率の小さい低屈折率層4と、を有し、基板111の長手方向の側面111aは、基板2側にテーパーを有する。
【選択図】図1
Description
図1(a)は、第1の実施の形態に係る発光装置の垂直断面図である。図1(b)は、図1(a)の線分A−Aにおいて切断された発光装置の垂直断面図である。
第2の実施の形態は、発光素子の構造において、第1の実施の形態と異なる。第1の実施の形態と同様の点については、説明を省略又は簡略化する。
第3の実施の形態は、発光素子の構造において、第1の実施の形態と異なる。第1の実施の形態と同様の点については、説明を省略又は簡略化する。
第4の実施の形態は、発光素子の構造において、第1の実施の形態と異なる。第1の実施の形態と同様の点については、説明を省略又は簡略化する。
第5の実施の形態は、発光素子の構造において、第1の実施の形態と異なる。第1の実施の形態と同様の点については、説明を省略又は簡略化する。
上記の実施の形態によれば、発光素子11、21、31、41、51と側壁3との間に低屈折率層4を設けること、基板111、211、311、411、511の少なくとも長手方向の側面111a、211a、311a、411a、511aの基板2側にテーパーを設けること、短手方向の平面111b、211b、311b、411b、511bの面よりも平滑度の高い面を長手方向の側面111a、211a、311a、411a、511aに用いること、等により、発光装置10、20、30、40、50の光取出効率を高めることができ、さらに、発光装置10、20、30、40、50は、小型化、又は薄型化しても、高い光取出効率を保つことができる。
1 ケース
2 基板
3 側壁
4 低屈折率層
5 蛍光体層
11、21、31、41、51 発光素子
111、211、311、411、511 基板
111a、211a、311a、411a、511a 側面
111b、211b、311b、411b、511b 側面
112、212、312、412、512 結晶層
Claims (6)
- 第1の基板及び前記第1の基板上の側壁を有するケースと、
前記第1の基板上の前記側壁に囲まれた領域に搭載され、第2の基板、及び発光層を含む結晶層を有する、前記第1の基板に対して垂直な方向から見た平面形状が長方形の発光素子と、
前記発光素子と前記側壁との間に位置する、前記第2の基板よりも屈折率の小さい低屈折率層と、
を有し、
前記第2の基板の長手方向の側面は、前記第1の基板側にテーパーを有する、発光装置。 - 前記第2の基板の長手方向の側面の前記テーパーのない部分は、前記第2の基板の短手方向の側面よりも平滑度が高い、
請求項1に記載の発光装置。 - 前記第2の基板は、主面がc面であるGaN基板であり、
前記第2の基板の前記長手方向の側面の前記テーパーのない部分はm面であり、
前記第2の基板の前記短手方向の側面はa面である、
請求項2に記載の発光装置。 - 前記低屈折率層は、空気又は真空の層である、
請求項1〜3のいずれか1項に記載の発光装置。 - 前記ケースは、前記側壁上に形成されたガラス層により密閉される、
請求項4に記載の発光装置。 - 複数の前記発光素子を有し、
前記低屈折率層は、各々の前記発光素子と前記側壁との間、及び前記複数の発光素子の間に位置する、
請求項1〜5のいずれか1項に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012099046A JP5900131B2 (ja) | 2012-04-24 | 2012-04-24 | 発光装置 |
US13/865,890 US8937318B2 (en) | 2012-04-24 | 2013-04-18 | Light-emitting device having tapered portions of different lengths |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012099046A JP5900131B2 (ja) | 2012-04-24 | 2012-04-24 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013229393A true JP2013229393A (ja) | 2013-11-07 |
JP5900131B2 JP5900131B2 (ja) | 2016-04-06 |
Family
ID=49379275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012099046A Active JP5900131B2 (ja) | 2012-04-24 | 2012-04-24 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8937318B2 (ja) |
JP (1) | JP5900131B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160109892A (ko) * | 2015-03-13 | 2016-09-21 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR20160148304A (ko) * | 2015-06-16 | 2016-12-26 | 삼성전자주식회사 | 발광 소자 패키지 |
JP2020120082A (ja) * | 2019-01-28 | 2020-08-06 | 市光工業株式会社 | 発光装置および車両用前照灯 |
JP7503672B2 (ja) | 2023-02-03 | 2024-06-20 | 晶元光電股▲ふん▼有限公司 | 光電部品 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6102670B2 (ja) * | 2013-10-07 | 2017-03-29 | 豊田合成株式会社 | 発光装置 |
US9559273B2 (en) * | 2013-12-02 | 2017-01-31 | Achrolux Inc. | Light-emitting package structure and method of fabricating the same |
JP6237181B2 (ja) * | 2013-12-06 | 2017-11-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2015207754A (ja) * | 2013-12-13 | 2015-11-19 | 日亜化学工業株式会社 | 発光装置 |
KR102346798B1 (ko) | 2015-02-13 | 2022-01-05 | 삼성전자주식회사 | 반도체 발광장치 |
JP6458671B2 (ja) * | 2015-07-14 | 2019-01-30 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN114078399B (zh) * | 2020-08-14 | 2023-09-22 | 华为技术有限公司 | 一种显示面板、增强型偏光片模组及显示装置 |
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JP2007250817A (ja) * | 2006-03-16 | 2007-09-27 | Stanley Electric Co Ltd | Led |
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2013
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JP2007533160A (ja) * | 2004-04-15 | 2007-11-15 | サエス ゲッターズ ソシエタ ペル アチオニ | 真空または不活性ガスパッケージled用集積ゲッター |
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Cited By (7)
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KR20160109892A (ko) * | 2015-03-13 | 2016-09-21 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR102374671B1 (ko) * | 2015-03-13 | 2022-03-16 | 서울바이오시스 주식회사 | 발광 다이오드 |
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JP2020120082A (ja) * | 2019-01-28 | 2020-08-06 | 市光工業株式会社 | 発光装置および車両用前照灯 |
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JP7503672B2 (ja) | 2023-02-03 | 2024-06-20 | 晶元光電股▲ふん▼有限公司 | 光電部品 |
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US20130277681A1 (en) | 2013-10-24 |
JP5900131B2 (ja) | 2016-04-06 |
US8937318B2 (en) | 2015-01-20 |
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